Abstract: A high density NAND-type nonvolatile resistance random access storage circuit and its operations are shown herein . A unit memory cell of the circuit includes a field effect transistor (FET) with a resistance changeable component connected to its gate electrode. The field effect transistor is an n-channel field effect transistor or a p-channel field effect transistor. By applying the voltage or current between the top electrode of the resistive random access component and the FET drain or source electrode, more than two stable states can be maintained such that these states can be drawn from the FET drain or source terminal. The NAND circuit includes the above unit cell as a center to form a multi-bit memory. The circuit consists of multi-bit memories connected in series, has a NAND logic gate function, and forms output of this NAND circuit which can be drawn in a form of series output.

Abstract: A memory chip includes a memory array and a two-dimensional sensing system. The array includes a multiplicity of memory cells connected in rows by word lines and in columns by bit lines. The sensing system moves a read point two-dimensionally within a two-dimensional read space as the two-dimensional read space shrinks and shifts over the life of the chip.

Abstract: A memory device and a method for operating the same are provided. The memory device includes a substrate, a plurality of word lines, and a plurality of dummy word lines. The word lines and the dummy word lines are located on the substrate. At least one side of each dummy word line is adjacent to the word line. At least one word line and at least one dummy word line form a group. The method for operating the memory device includes the following. At least one group is selected, and the group is operated. A first operational voltage is applied to the word line of the group. A second operational voltage is applied to the dummy word line of the group.

Abstract: A semiconductor memory device includes a memory cell, a sense amplifier electrically connected to the memory cell, the sense amplifier including a node for sensing a voltage during a sense operation and a data latch electrically connected to the node and configured to hold a first voltage corresponding to a voltage of the node when a strobe signal is issued during a strobe operation, and a controller configured to raise the voltage of the node during the strobe operation before the strobe signal is issued.

Abstract: A three-dimensional flash memory device includes a plurality of cell strings arranged in a direction perpendicular to a substrate. The three-dimensional flash memory includes a first dummy word line disposed between a ground selection line and a main word line, and a second dummy word line disposed between the main word line and a string selection line and being asymmetric with respect to the first dummy word line. Voltages of different levels are respectively applied to the first and second dummy word lines during a read operation.

Abstract: A resistive memory device implements a selective refresh operation in which only memory cells with reduced sense margin are refreshed. In some embodiments, the selective refresh operation introduces a sense margin guardband so that a memory cell having programmed resistance that falls within the sense margin guardband will be refreshed during the read operation. The selective refresh operation is performed transparently at each read cycle of the memory cells and only memory cells with reduced sense margins are refreshed.

Abstract: Disclosed are non-volatile memory erasure method and device for solving the problem of unnecessary time expenditure and complex process of the current erasure operation. The method comprises: after receiving an erasure instruction, performing a pre-reading verification on the target erasure area corresponding to the erasure instruction; if the pre-reading verification passes, then performing an erasure operation on the target erasure area; if not, then performing pre-programming verification on the target erasure area, and after the pre-programming verification passes, performing the erasure operation on the target erasure area. The method of the present application can eliminate the unnecessary pre-programming verification process while ensuring the target erasure area is in a full-erasure state before the erasure operation, thus saving erasure time and simplifying the erasure process.

Abstract: A semiconductor memory device according to an embodiment of the present invention includes a memory block, a driving circuit performing a program operation on memory cells and a voltage detector generating a detection signal when an external power supply voltage is reduced to less than a reference voltage level. The driving circuit discharges a voltage applied to a drain selection line during the program operation in response to the detection signal.

Abstract: A semiconductor storage device according to the present embodiment includes a constant current source. A reference current path is connected to the constant current source to flow a reference current and to generate a reference voltage. A supply current path or a plurality of supply current paths are connected to bit lines to selectively flow supply a current or currents different from each other and generate a detection voltage. A sense amplifier is connected to the reference current path and the supply current paths to amplify a voltage difference between the reference voltage and the detection voltage.

Abstract: A sense amplifier of a memory cell having a sense voltage generating circuit configured to generate a sense voltage; and a sensing circuit configured to compare a bitline voltage of the memory cell with the sense voltage, and to output a digital output signal indicating a content of the memory cell, wherein during a sense phase, the sensing circuit is decoupled from a voltage supply which charges a bitline capacitance during a precharge phase, and is coupled to and supplied by the bitline capacitance. The sense voltage generating circuit may be further configured to generate a sense voltage that during a precharge phase is dependent on the voltage supply and during a sense phase is independent of the voltage supply.

Abstract: Apparatuses and methods related to performing logical operations using sensing circuitry are disclosed. One apparatus comprises an array of memory cells, sensing circuitry coupled to the array of memory cells via a sense line, and a controller coupled to the array of memory cells and the sensing circuitry. The sensing circuitry includes a sense amplifier and does not include an accumulator. The controller is configured to perform logical operations using the array of memory cells as an accumulator without transferring data out of the memory array and sensing circuitry.

Abstract: A method comprising: generating or receiving read threshold information indicative of multiple read thresholds values that were applied when reading multiple flash memory cells that belong to multiple rows of a flash memory module; and generating a compressed representation of reference read thresholds to be applied during future read operations of the flash memory cells in response to the read threshold information.

Abstract: A non-volatile memory device and method for programming cells using repeated pulses of program voltages, with interleaved read operations to determine the level of read current, until the desired programming state is achieved. Each successive program pulse has one or more program voltages increased by a step value relative to the previous pulse. For a single level cell type, each cell is individually removed from the programming pulses after reaching a first read current threshold, and the step value is increased for one or more kicker pulses thereafter. For a multi-level cell type, the step value drops after one of the cells reaches a first read current threshold, some cells are individually removed from the programming pulses after reaching a second read current threshold while others are individually removed from the programming pulses after reaching a third read current threshold.

Abstract: A semiconductor device according to an embodiment may include a memory string including a drain selection transistor, memory cells and a source selection transistor all coupled between a bit line and a common source line, and the drain selection transistor, the memory cells and the source selection transistor configured to operate, respectively, in response to voltages applied to a drain selection line, word lines and a source selection line. The semiconductor device may include an operation circuit configured for performing a program operation. The operation circuit may be configured for sequentially performing a first operation, a second operation, and a third operation. In the first operation memory cells adjacent to the drain selection transistor may be programmed. In the second operation memory cells adjacent to the source selection transistor may be programmed. In the third operation remaining memory cells may be programmed.

Abstract: Disclosed is a nonvolatile memory having a memory cell array including a plurality of cell strings, each cell string including memory cells stacked in a direction perpendicular to a substrate, a ground selection transistor between the memory cells and the substrate, and a string selection transistor between the memory cells and a bit line. The memory also includes an address decoder connected to the memory cells, the string selection transistors, and the ground selection transistors, and configured to apply a ground voltage to the string selection lines, word lines, and ground selection line. Further, the memory includes a read/write circuit connected to the string selection transistors through bit lines, and at least one first memory cell maintains a threshold voltage higher than a threshold voltage distribution corresponding to an erase state.

Abstract: Information associated with a read to solid state storage is received, including a read number and a read value. The read value is written to a location in a cell and bin map, wherein (1) the location in the cell and bin map corresponds to the read number and (2) the cell and bin map tracks, for each cell in a group of cells, which bin out of a plurality of bins a given cell falls into.

Abstract: A semiconductor device for storing data includes a memory cell. The memory cell comprises a plurality of transistors. A trimmable sense amplifier is electrically connected to the memory cell. The trimmable sense amplifier is configured to provide variable current to said memory cell. A charge pump is also electrically connected to the memory cell. The charge pump includes a plurality of diodes disposed in series with one another. The charge pump includes an input for receiving an input voltage and an output for providing an output voltage greater than the input voltage to the memory cell.

Abstract: A semiconductor memory device comprises: a memory cell array comprising memory cells, each memory cell being able to store multi-bit data; word-lines connected to the memory cells, the word-lines being arranged in a first direction; bit-lines arranged in a second direction crossing the first direction, the bit-lines reading data from the memory cell array; and a control circuit controlling the operation of the memory cell array. The control circuit performs a first write operation of applying a first write voltage between a selected word-line and a channel of a selected memory cell, then performs a verify operation of determining whether the first write operation is completed, and performs a second write operation of applying, if the write operation to the first threshold voltage is completed in the verify operation, a second write voltage lower than the first write voltage between the selected word-line and the channel.

Abstract: A semiconductor memory device and an operating method of the semiconductor memory device change a read voltage used in a read operation by performing a moving read operation, a randomize operation, and a program/erase compensation operation independently or in combination, thereby stably performing the read operation without an error and reducing a time for the read operation even when distribution of threshold voltages of the memory cells is changed according to a program/erase cycling effect or a retention effect.

Abstract: A sense amplifier is provided which includes a first load supplied with a selection cell current from a read bit line connected to a selected memory cell; a second load supplied with a reference current from a reference read bit line connected to a reference cell, a resistance value of the second load being different from a resistance value of the first load; and a sensing unit configured to correct a level of the reference current based on a resistance ratio of the first and second loads and to compare the selection cell current and the corrected reference current.

Abstract: Read disturb due to hot electron injection is reduced in a 3D memory device by controlling the magnitude and timing of word line and select gate ramp down voltages at the end of a sensing operation. In an example read operation, the magnitude of a selected word line voltage is increased to be equal to pass voltages of unselected word lines, and the selected and unselected word line are ramped down at the same time, to avoid creating a channel gradient. In an example verify operation, the above procedure can be followed when the selected word line is at a source-side or middle range among all word lines. When the selected word line is at a drain-side among all word lines, a source-side select gate can be ramped down before the selected word line and a drain-side select gate can be ramped down after the selected word line.

Abstract: A semiconductor apparatus includes a plurality of memory blocks including a plurality of unit memory blocks, respectively, a first area extending in a first direction among areas formed among the plurality of memory blocks, a second area extending in a second direction among the areas formed among the plurality of memory blocks, and a test mode-related circuit block arranged at an edge part of the first area.

Abstract: Various embodiments are directed to apparatuses and methods for faster solid state drive (SSD) boot-up. On boot-up, SSD control algorithms may load non-logical to physical (L2P) parts of a context and signal the system that the SSD is ready. The context may comprise various state data pertaining to the SSD. After signaling that the SSD may be ready to receive access requests, the SSD control algorithms may begin loading segments of the L2P table sequentially. Access to the L2P table may be blocked, however, when a requested segment has not yet been loaded. In such cases, the SSD control algorithms may then load the requested segment out of turn and then service the access request.

Abstract: A page buffer for a NAND flash memory array includes a pre-charge switch, a first switch, a read switch, a write switch, a latch, and a data switch. The pre-charge switch is coupled between a supply node with a supply voltage and a bit line that is coupled to a selected cell of the NAND flash memory array. The first switch is coupled between the bit line and a data node. The read switch is coupled between the data node and an I/O node. The write switch is coupled between an inverse data node, which is out of phase with the data node, and the I/O node. The latch is coupled between the data node and the inverse data node. The data switch is coupled between the inverse data node and a first node. The enable switch is coupled between the first node and a ground.

Abstract: A sense amplifier comprises a cell current generator, a reference current generator, a first and a second charge/discharge elements, a first and a second voltage trigger circuits, and a data holder. The cell current generator is used to output a cell current of a memory cell. The reference current generator is used to output a duplicated reference current. The first and the second charge/discharge elements are used to convert the cell current and the duplicated reference current to voltage signals respectively. The first voltage trigger circuit is used to output a data signal according to a voltage signal outputted from the first charge/discharge element. The second voltage trigger circuit is used to output a hold control signal according to a voltage signal outputted from the second charge/discharge element. The data holder is used to hold a voltage level of the data signal according to the hold control signal.

Abstract: Provided is a semiconductor memory device and a method of erasing the same. The semiconductor memory device includes a memory cell array including a plurality of memory cells; and a peripheral circuit unit configured to apply a pre-erase voltage, an erase voltage, and an erase operation voltage to the memory cell array so as to erase data stored in the plurality of memory cells when an erase operation is performed. The memory cell array includes a plurality of source selection transistors, the plurality of memory cells, and a plurality of drain selection transistors that are connected between a source line and a bit line. When the pre-erase voltage is applied to the source line during the erase operation, different erase operation voltages are applied to an outermost source selection transistor adjacent to the source line among the plurality of source selection transistor and the other selection transistors.

Abstract: A non-volatile memory device and method for programming cells using repeated pulses of program voltages, with interleaved read operations to determine the level of read current, until the desired programming state is achieved. Each successive program pulse has one or more program voltages increased by a step value relative to the previous pulse. For a single level cell type, each cell is individually removed from the programming pulses after reaching a first read current threshold, and the step value is increased for one or more kicker pulses thereafter. For a multi-level cell type, the step value drops after one of the cells reaches a first read current threshold, some cells are individually removed from the programming pulses after reaching a second read current threshold while others are individually removed from the programming pulses after reaching a third read current threshold.

Abstract: The invention relates to a method for managing the endurance of a data storage system provided with a set of sectors endowed with a guaranteed native endurance capacity (G), comprising the steps consisting in: —partitioning said data storage system into a plurality of work sectors, and into a plurality of replacement sectors able to form an endurance reservoir, certain of the work sectors being intended to be replaced by replacement sectors when said work sectors are expended after a certain number of programming and/or erasure cycles; —defining an address management area making it possible to retrieve the location of the replacement sectors assigned to expended work sectors; —determining, sector by sector, whether a current work sector is physically expended, and executing a step of replacing this work sector by a replacement sector, only when said current work sector is declared physically expended.

Abstract: A semiconductor memory device including a plurality of memory blocks each including a bit line to which a plurality of memory cells are connected, and a dummy bit line to which a plurality of dummy cells are connected; a reference cell; and a sense amplifier including a first input terminal to which selected memory cell of the plurality of memory cells is to be electrically connected via the bit line, and a second input terminal to which the reference cell is to be electrically connected, the dummy bit line of one memory block of the plurality of memory blocks different from another memory block of the plurality of memory blocks including the selected memory cell being to be electrically connected to the second input terminal of the sense amplifier.

Abstract: A non-volatile memory array storing data and ECCs includes error correcting logic. A data set can be read by performing iterations including sensing data using a read bias, and producing an indication of errors in the sensed data. A first iteration uses a first read bias. In each iteration, if the indication in a current iteration is less than a threshold, then the data is output from the selected cells sensed in the present iteration. If the indication in the current iteration exceeds the threshold, then another iteration is performed using a moved read bias, unless the indication in the current iteration shows an increase in errors relative to a previous iteration, in which case then sensed data from the previous iteration is output. Double buffering logic can be used to store sensed data during a current and a previous iteration.

Abstract: A storage medium communicating with a memory controller sent a read command is disclosed. The storage medium includes a plurality of memory units. Each memory unit includes at least sixteen memory cells coupled to a word line and a plurality of bit lines. A controlling unit receives first address information according to the read command and generates a row read signal and a column read signal according to the first address information. A row decoding unit activates the word line according to the row read signal. A column decoding unit activates the bit lines according to the column read signal to output a plurality of storing bits stored in the sixteen memory cells. A read-out unit processes the storing bits to generate a plurality of reading bits. The controlling unit outputs the reading bits to the memory controller in serial.

Abstract: Compiling a circuit design includes receiving the circuit design specified in a hardware description language, detecting, using a processor, a slice of a vector within the circuit design, and determining that the slice is defined by a left slice boundary variable and a right slice boundary variable. A hardware description is generated from the circuit design using the processor by including a first shifter circuit receiving the left slice boundary variable as an input signal, a second shifter circuit receiving the right slice boundary variable as an input signal, a control signal generator coupled to the first and second shifter circuits, and an output stage. The output stage, responsive to a control signal dependent upon an output from the first shifter circuit and an output from second shifter circuit, generates an output signal including newly received values from a data signal only for bit locations of the output signal corresponding to the slice.

Abstract: A Solid-State Disk (SSD) controller performs soft-decision decoding with a single read, thus improving performance, power, and/or reliability of a storage sub-system, such as an SSD. In a first aspect, the controller generates soft-decision metrics from channel parameters of a hard decode read, without additional reads and/or array accesses. In a second aspect, the controller performs soft decoding using the generated soft-decision metrics. In a third aspect, the controller generates soft-decision metrics and performs soft decoding with the generated soft-decision metrics when a hard decode read error occurs.

Abstract: The present disclosure includes apparatuses and methods for determining an age of data stored in memory. A number of embodiments include determining a sensing voltage that results in a particular error rate being associated with a sense operation performed on a memory using the sensing voltage, determining a difference between the determined sensing voltage and a program verify voltage associated with the memory, and determining an age of data stored in the memory based on the determined difference.

Abstract: In accordance with an embodiment, an integrated circuit includes a plurality of devices on the integrated circuit. Each device includes a driving circuit, an individual contact pad coupled to a first terminal of the driving circuit, and a switch having a first terminal coupled to the first terminal of the driving circuit. Also, the integrated circuit includes a shared contact pad coupled to a second terminal of each switch of the plurality of devices. The integrated circuit also includes a controller coupled to each switch of the plurality of devices, where the controller is configured to selectively control each switch to couple each driving circuit to the shared contact pad.

Abstract: An apparatus comprising a memory and a controller. The memory is configured to process a plurality of read/write operations. The memory comprises a plurality of memory modules. Each memory module has a size less than a total size of the memory. The controller is configured to write user data using a plurality of threshold voltages. The data considered hot-read data is written using a first voltage threshold. The data not considered hot-read data is written using a second voltage threshold. The first voltage threshold reduces an impact on endurance of the memory.

Abstract: A system including a read module and a detector module. The read module is configured to generate a plurality of read signals by reading a plurality of memory cells located along a bit line or a word line. The detector module is configured to detect a sequence of data stored in the plurality of memory cells based on (i) the plurality of read signals, and (ii) a plurality of reference signals associated with the plurality of memory cells. One of the plurality of reference signals associated with a first memory cell of the plurality of memory cells includes one of a first signal and a second signal. The first signal is free of interference from a second memory cell adjacent to the first memory cell along the bit line or the word line. The second signal accounts for interference from the second memory cell.

Abstract: A semiconductor device includes a semiconductor die having an outer edge and an active area defining a main horizontal surface and being spaced apart from the outer edge. The semiconductor device further includes an edge termination structure having a closed vertical trench surrounding the active area. The edge termination structure further includes at least one vertical trench arranged, in a horizontal cross-section, between the closed vertical trench and the active area. The at least one vertical trench includes an insulated side wall forming an acute angle with the outer edge.

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

Abstract: A method of programming a nonvolatile memory device comprises performing an N-th program loop based on state data stored in data latches according to a default state ordering, determining whether conversion of the default state ordering is required according to a predetermined criterion, as a consequence of determining that conversion of the default state ordering is required, converting all or part of the state data stored in the data latches from the default state ordering to another state ordering, and performing a (N+1)th program loop based on the converted state data.

Abstract: Provided is a method for driving a variable resistance nonvolatile storage element that can improve the information holding capability. The method includes: determining whether or not a current that flows through the nonvolatile storage element is larger than or equal to a first verify level IRL (Verify); determining whether or not a current that flows through the nonvolatile storage element is smaller than or equal to a second verify level IRH (Verify); and determining that the nonvolatile storage element is in the second resistance state when the current that flows through the nonvolatile storage element is smaller than a current reference level Iref, and determining that the nonvolatile storage element is in the first resistance state when the current is larger than the current reference level Iref, the current reference level Iref satisfying (IRL (Verify)+IRH (Verify))/2<Iref<IRL (Verify).

Abstract: The semiconductor memory device includes a memory cell array including a plurality of cell transistors, and a page buffer configured to perform an verification operation for verifying a program state of a selected cell transistor by sensing a voltage of a sense node connected to a selected bit line of the memory cell array through a bit line selection transistor, wherein a logic level corresponding to a voltage of the selected bit line is constantly maintained regardless of the program state of the selected cell transistor during the verification operation.

Abstract: Systems and methods are provided to generate soft information related to the threshold voltage of a memory cell. A range of threshold voltages for the memory cell is divided into subregions of threshold voltage values herein referred to as bins. An output of the memory cell in response to an applied reference signal is measured. The applied reference signal includes a voltage value and position information. A single bin is identified based on the position information of the reference signal. The identified bin is split into more than one bin based on the output of the memory cell and the voltage value of the reference signal. The newly split bins and all the other bins that were not split are assigned new bin indices.

Abstract: In one embodiment, a method comprises determining an adaptation for a reference voltage used in a flash memory device as a function of a first count of items read from the flash memory device and a second count of items read from the flash memory device; and shifting the reference voltage at least in part by the adaptation.

Abstract: An instruction to write to a location in the Flash memory is received. It is determining if the Flash memory exposes a level placement setting associated with defining what voltage range corresponds to what level. In the event it is determined that the Flash memory exposes a level placement setting, an accurate coarse write is performed on the location, including by configuring the level placement setting to be a first value, and after the accurate coarse write is performed on the location, a fine write is performed on the location, including by configuring the level placement setting to be a second value, in response to receiving the instruction.

Abstract: A method, in a memory including multiple analog memory cells, includes segmenting a group of the memory cells into a common section and at least first and second dedicated sections. Each dedicated section corresponds to a read threshold that is used for reading a data page to be stored in the group. Data to be stored in the group is jointly balanced over a union of the common section and the first dedicated section, and over the union of the common section and the second dedicated section, to create a balanced page such that for each respective read threshold an equal number of memory cells will be programmed to assume programming levels that are separated by the read threshold. The balanced page is stored to the common and dedicated sections, and the read thresholds are adjusted based on detecting imbalance between data values in readout results of the balanced page.

Abstract: A method includes programming a group of analog memory cells by writing respective analog values into the memory cells in the group. After programming the group, the analog values are read from the memory cells in the group using a set of read thresholds so as to produce readout results. Respective optimal positions for the read thresholds in the set are identified based on the readout results. A noise level in the readout results is estimated based on the identified optimal positions of the read thresholds.

Abstract: Current appearing on a bit-line with no memory cells asserted may be used during a bit-line pre-charge time before a read is performed so as to bias a gate-drain shorted PMOS pull-up device connected between the bit-line and a power supply at a VDD potential. The capacitance connected to the gate of this PMOS pull-up device may be used to “store” the resultant gate-source voltage when the drain is disconnected once the pre-charge time is completed. Once the read operation starts, the current of the PMOS pull-up device that has the “stored” resultant gate-source voltage is re-used as the reference for sensing the state of an asserted memory cell connected to the bit-line during the read operation thereof.

Abstract: Current appearing on a bit-line with no memory cells asserted may be used during a bit-line pre-charge time before a read is performed so as to bias a gate-drain shorted PMOS pull-up device connected between the bit-line and a power supply at a VDD potential. The capacitance connected to the gate of this PMOS pull-up device may be used to “store” the resultant gate-source voltage when the drain is disconnected once the pre-charge time is completed. Once the read operation starts, the current of the PMOS pull-up device that has the “stored” resultant gate-source voltage and the “stored” resultant gate-source voltage itself are re-used as the references, or multi-reference, for sensing the state of an asserted memory cell connected to the bit-line during the read operation thereof.

Abstract: The storage layer such as a nitride layer of a nonvolatile memory cell has two storage parts storing separately addressable data, typically respectively proximate to the source terminal and the drain terminal. The applied drain voltage while sensing the data of one of the storage parts depends on the data stored at the other storage part. If the data stored at the other storage part is represented by a threshold voltage exceeding a minimum threshold voltage, then the applied drain voltage is raised. This technology is useful in read operations and program verify operations to widen the threshold voltage window.