Abstract: A power switch control circuit includes a supply rail configured to supply power to a memory array. A first header switch couples the supply rail to a first power supply that corresponds to a first power domain. A second header switch couples the supply rail to a second power supply that corresponds to a second power domain. A control circuit is configured to receive a select signal and a shutdown signal, and to output control signals to the first and second header switches to selectively couple the first and second header switches to the first and second power supplies, respectively, in response to the select signal and the shutdown signal. The control circuit is configured to output the control signals to the first and second header switches to disconnect both the first and second header switches from the first and second power supplies in response to the shutdown signal and irrespective of the select signal.

Abstract: A semiconductor storage device includes a first word line electrically connected to a first memory cell, a second word line electrically connected to a second memory cell, and a voltage generation circuit configured to supply a first voltage to a first line electrically connected to the first word line and a second voltage to a second line electrically connected to the second word line. The voltage generation circuit includes a first regulator configured to output the first voltage to the first line and output a first signal according to the first voltage, a second regulator configured to output the second voltage to the second line and output a second signal according to the second voltage, and a switch circuit configured to open or close an electrically conductive path between the first line and the second line, based on at least one of the first signal and the second signal.

Abstract: An integrated circuit including: an oscillator configured to generate an oscillating voltage with a predetermined oscillation frequency in an oscillation period; a voltage regulator configured to generate an output voltage for driving the oscillator and provide the output voltage to the oscillator; and a current injection circuit configured to provide an oscillation current to the oscillator, in response to an oscillation enable signal in the oscillation period.

Abstract: A semiconductor device has a first memory circuit comprising a first memory cell comprising a first field effect transistor, a second memory circuit comprising a second memory cell comprising a second field effect transistor, and a regulator for converting the first power supply potential to a second voltage value lower than the voltage value of the first power supply potential. The second gate length of the second field effect transistor is longer than the first gate length of the first field effect transistor, the first memory cell is supplied with a second power supply potential through regulator, and the second memory cell is supplied with a first power supply potential.

Abstract: Compute-in memory circuits and techniques are described. In one example, a memory device includes an array of memory cells, the array including multiple sub-arrays. Each of the sub-arrays receives a different voltage. The memory device also includes capacitors coupled with conductive access lines of each of the multiple sub-arrays and circuitry coupled with the capacitors, to share charge between the capacitors in response to a signal. In one example, computing device, such as a machine learning accelerator, includes a first memory array and a second memory array. The computing device also includes an analog processor circuit coupled with the first and second memory arrays to receive first analog input voltages from the first memory array and second analog input voltages from the second memory array and perform one or more operations on the first and second analog input voltages, and output an analog output voltage.

Abstract: A method of producing an apparatus comprising an electrical circuit that has one or more characteristics that meet a design specification is presented. The method includes designing the electrical circuit with a trim circuit having a trim value that is variable, The electrical circuit is adjustable based on the trim value of the trim circuit. There is encoding of the functional circuit information and/or trim circuit information in a tag, The method has a reading of the functional circuit information and/or the trim circuit information stored in the tag and the determining of the trim value for the trim circuit that results in the characteristic of the electrical circuit meeting the design specification using the functional circuit information and/or the trim circuit information.

Abstract: A memory system may include memory circuitry and power circuitry, which may include a power storage device. The memory system may also include a controller to determine a power demand of the memory circuitry. In response to determining that the power demand is less than an incoming supply power, the controller may generate a first mode signal to induce a charging state of the power storage device. Additionally, in response to determining that the power demand is greater than the incoming supply power, the controller may generate a second mode signal to cause the power storage device to provide a secondary power to the memory circuitry.

Abstract: Memory circuits used in computer systems may have different operating modes. In a retention mode, a voltage level of an array power supply node coupled to memory cells included in the memory circuit is reduced to a level sufficient to retain data, but not to perform read and write operations to the memory cells. A power converter circuit may be configured to generate the retention voltage level, and adjust the retention voltage level using a leakage current of dummy memory cells included in the memory circuit.

Abstract: A hierarchy of interconnected memory retention (MR) circuits detect a clock gating mode being entered at any level of an integrated circuit. In response, the hierarchy automatically transitions memory at the clock gated level and all levels below the clock-gated level from a normal operating state to a memory retention state. When a memory transitions from a normal operating state to a memory retention state, the memory transitions from a higher power state (corresponding to the normal operating state) to a lower power state (corresponding to the memory retention state). Thus, in addition to the dynamic power savings caused by the clock gating mode, the hierarchy of MR circuits automatically transitions the memory modules at the clock gated level and all levels below the clock gated level to a lower power state. As a result, the leakage power consumption of the corresponding memory modules is reduced relative to prior approaches.

Abstract: Provided herein may be a memory controller configured to control a memory device for storing data. The memory controller may include: a voltage sensor configured to detect whether a level of a power supply voltage to be applied to the memory device and the memory controller is equal to or less than a reference level, and generate detect information; and a power controller configured to receive the detect information and output, to the memory device, a power supply voltage reset command for resetting the power supply voltage to be applied to the memory device, wherein the reference level is greater than the voltage level for initiating reset of the memory device and the memory controller and less than the voltage level required for the memory device and the memory controller to perform an operation.

Abstract: A signal calibration method that includes the steps outlined below is provided. A phase of an under-test signal generated by a memory controller is set to initiate a calibration process. A low-power status control command is issued by transmitting signals that include the under-test signal generated by the memory controller to a memory unit to switch the memory unit to a low power status, the low-power status control command forcing the under-test signal to toggle. A read command is issued by the memory controller to the memory unit for reading data. When the responded data does not match the predetermined data, the phase of the under-test signal is determined to be within a timing margin by the memory controller. When the responded data matches the predetermined data, the phase of the under-test signal is determined to be not within the timing margin by the memory controller.

Abstract: Circuits and methods for controlling the startup of multiple parallel power converters that avoid in-rush current and/or switch over-stress in an added power converter or a power converter having one or more fault conditions. Embodiments include node status detectors coupled to selected nodes within parallel-connected power converters to monitor voltage and/or current, and configured in some embodiments to work in parallel with an output status detector measuring the output voltage of an associated power converter during startup. With charge pump-based power converters, the node status detectors ensure that the pump capacitors of each power converter are adequately charged while the output capacitor is charged as well. For such embodiments, a soft-start period of startup may be considered finished if both the shared output capacitors and the pump capacitors of each power converter are charged to selected target values. Embodiments may also be used for fault detection during steady-state operation.

Abstract: Methods and systems to provide a multi-Vcc environment, such as to selectively boost an operating voltage of a logic block and/or provide a level-shifted control to the logic block. A multi-Vcc environment may be implemented to isolate a Vmin-limiting logic block from a single-Vcc environment, such as to reduce Vmin and/or improve energy efficiency in the single-Vcc environment. The logic block may include bit cells of a register file, a low-level processor cache, and/or other memory system. A cell Vcc may be boosted during a read mode and/or write wordlines (WWLs) and/or read wordlines (RWLs) may be asserted with boost. A wordline decoder may include a voltage level shifter with differential split-level logic, and a dynamic NAND, which may include NAND logic, a keeper circuit, and logic to delay a keeper control based on a delay of the level shifter to reduce contention during an initial NAND evaluation phase.

Abstract: An integrated circuit and an operating method thereof are provided. The integrated circuit includes memory cells, at least one first word line, second word lines, bit lines and write-assist bit lines. The at least one first word line is electrically connected to at least one row of the memory cells. The second word lines are electrically connected to other rows of the memory cells. Two bit lines are located between a column of the memory cells and two write-assist bit lines. The bit lines and the write-assist bit lines are configured to be electrically disconnected with each other when at least one of the memory cells electrically connected with the at least one first word line is configured to be written, and electrically connected with each other when at least one of the memory cells electrically connected to the second word lines is configured to be written.

Abstract: Methods, systems, and apparatuses related to memory operation with multiple sets of latencies are disclosed. A memory device or system that includes a memory device may be operable with one or several sets of latencies (e.g., read, write, or write recovery latencies), and the memory device or system may apply a set of latencies depending on which features of the memory device are enabled. For example, control circuitry may be configured to enable one or more features during operations on a memory array, and the control circuitry may apply a set of latency values based on a number or type of features that are enabled. The sets of latency values may depend, for example, on whether various control features (e.g., dynamic voltage frequency scaling) are enabled, and a device may operate within certain frequency ranges irrespective of other characteristics (e.g., mode register values) or latencies applied.

Abstract: A memory device is provided including physical block circuitry including a first lateral network arrangement and a second lateral network arrangement. Each of the first and second lateral network arrangements includes a single generator configured to output both a sense amplifier voltage VHSA and a data latch voltage VDDSA, in each of a first mode and a second mode. In the first mode, during which read and program verify and other operations may occur, the generator receives VHSA as a feedback signal and in the second mode, during which programming, POR, and EVFY operations may occur, the generator receives VDDSA as a feedback signal.

Abstract: A communication line is connected to first and second chips, and held at a first signal level. A monitor circuit changes a signal level of the communication line from the first signal to a second signal level while one of the first and second chips uses a current larger than a reference current. When the signal level of the communication line is the second signal level, the other of the first and second chips is controlled to a wait state that does not transfer to an operating state of using a current larger than the reference current.

Abstract: A semiconductor device includes a data input/output control block including a first power gating circuit coupled to a supply terminal of a first voltage and a second power gating circuit coupled to a supply terminal of a second voltage, the data input/output control block suitable for generating a control signal using the first and second voltages, a data input/output block including a third power gating circuit coupled to any one of the supply terminal of the first voltage and the supply terminal of the second voltage, the data input/output block suitable for inputting and outputting a data signal using the first and second voltages based on the control signal, and a memory block, coupled to the data input/output block, suitable for writing or reading the data signal.

Abstract: Aspects of the present invention provide a memory system comprising a plurality of stacked memory layers, each memory layer divided into memory sections, wherein each memory section connects to a neighboring memory section in an adjacent memory layer, and a logic layer stacked among the plurality of memory layers, the logic layer divided into logic sections, each logic section including a memory processing core, wherein each logic section connects to a neighboring memory section in an adjacent memory layer to form a memory vault of connected logic and memory sections, and wherein each logic section is configured to communicate directly or indirectly with a host processor. Accordingly, each memory processing core may be configured to respond to a procedure call from the host processor by processing data stored in its respective memory vault and providing a result to the host processor. As a result, increased performance may be provided.

Abstract: A method of fabricating a MOS transistor having a thinned channel region is described. The channel region is etched following removal of a dummy gate. The source and drain regions have relatively low resistance with the process.

Abstract: An apparatus for erasing non-volatile storage elements in a non-volatile memory system is disclosed. The apparatus has consistent speed in gate induced drain leakage (GIDL) erase across the operating temperature of the memory system. In one aspect, a voltage source outputs an erase voltage to NAND strings. The NAND strings may draw a GIDL erase current in response to the erase voltage. The amount of GIDL erase current for a given erase voltage is highly temperature dependent. The GIDL erase current may be sampled, and the erase voltage regulated based on the GIDL erase current. Therefore, the GIDL erase current, as well as erase speed, may be kept uniform across operating temperatures.

Abstract: The present subject matter relates to charge pump devices, systems, and methods in which a first plurality of series-connected charge-pump stages is connected between a supply voltage node and a first circuit node, wherein the first plurality of charge-pump stages are operable to produce a first electrical charge at the first circuit node, the first electrical charge having a first polarity; and a second plurality of series-connected charge-pump stages is connected between the supply voltage node and a second circuit node, wherein the second plurality of charge-pump stages are operable to produce a second electrical charge at the second circuit node, the second electrical charge having a second polarity.

Abstract: A semiconductor memory device comprises: a memory transistor; a first wiring connected to a gate electrode of the memory transistor; and a control device that executes a read operation to read data of the memory transistor and a write operation to write data in the memory transistor. In the read operation or the write operation, the control device: increases a voltage of the first wiring to a first voltage from a first timing to a second timing; and adjusts a length from the first timing to the second timing corresponding to at least one of a voltage of the first wiring, a current of the first wiring, and an amount of charge flowed through the first wiring.

Abstract: Disclosed herein is an apparatus that includes a first wiring layer including a first power line extending in a first direction, a second wiring layer including second and third power lines extending in a second direction, a third wiring layer including power electrode patterns arranged in the second direction, and a fourth wiring layer including a fourth power line extending in the second direction. The first and second power lines are connected by a first via electrode. The first and third power lines are connected by a second via electrode. The second power line and each of the power electrode patterns are connected by a third via electrode. The third power line and each of the power electrode patterns are connected by a fourth via electrode. The fourth power line and each of the power electrode patterns are connected by a fifth via electrode.

Abstract: Briefly, embodiments of claimed subject matter relate to adjusting, such as extending, a clock signal to permit completion of a write operations to a first memory type and/or to permit completion of read operations from a second memory type, wherein the first memory type and the second memory type are dissimilar from each other. In certain embodiments, the first memory type may comprise a magnetic random-access memory (MRAM) cell array, and the second memory type may comprise a static random-access memory (SRAM) cell array.

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for an on-die capacitor. A memory chip comprises an array of memory cells. A capacitor is electrically coupled to an array of memory cells. A capacitor receives at least a portion of discharged electricity from an operation for an array of memory cells. A capacitor supplies electricity back to an array of memory cells during a subsequent operation for an array of memory cells.

Abstract: A method and system for dynamically allocating power resources. The system includes a central controller connected to automatic transfer switches. The system also includes power zones. Each of the power zones includes server devices. Each of the automatic transfer switches are connected to at least one of the power zones. The system also includes a power pool connected to a power source. The power pool is connected to the central controller configured to dynamically allocate power of the power pool to the power zones.

Abstract: A stacked three dimensional semiconductor device includes multiple thin substrates stacked over one another and over a base substrate. The thin substrates may include a thickness of about 0.1 ?m. In some embodiments, a noise suppression tier is vertically interposed between active device tiers. In some embodiments, each tier includes active device portions and noise suppression portions and the tiers are arranged such that noise suppression portions are vertically interposed between active device portions. The noise suppression portions include decoupling capacitors in a power/ground mesh and alleviate vertical noise.

Abstract: A memory device includes a controller connected to first, second, third and fourth switches and configured to selectively operate the switches to connect first and second source voltage input terminals to a memory based on a desired current level required for the memory array.

Abstract: Aspects of the present disclosure generally relate to multi-mode voltage regulators. For example, the regulator may include a first voltage regulator configured to operate in a first power mode. The first voltage regulator is further configured to selectively adjust an output voltage using one of a voltage output of a replica pass transistor of the first voltage regulator or a voltage output of the pass transistor of the first voltage regulator based on a transition from a second power mode to the first power mode.

Abstract: In one embodiment, a computing device detects a module that is inserted into a first slot. The computing device includes a first slot to operate with a first type of module and a second slot to operate with a second type of module. The first slot and the second slot include a same pin position for receiving a power supply pin from the first type of module and the second type of module. The module is communicated with to determine whether the module is the first type of module or the second type of module. The first type of module receives a first type of signal that is combined with a second type of signal from the second type of module. The computing device adjusts a power supply voltage to the power supply pin of the first slot from a first value to a second value when the first type of module is detected.

Abstract: A system is provided to manage on-chip memory access for multiple threads. The system comprises multiple parallel processing units to execute the threads, and an on-chip memory including multiple memory units and each memory unit includes a first region and a second region. The first region and the second region have different memory addressing schemes for parallel access by the threads. The system further comprises an address decoder coupled to the parallel processing units and the on-chip memory. The address decoder is operative to activate access by the threads to memory locations in the first region or the second region according to decoded address signals from the parallel processing units.

Abstract: Techniques for negative voltage generation for a computer memory are described herein. An aspect includes enabling a first negative word line voltage (VWL) clock generator. Another aspect includes providing, by the first VWL clock generator, based on a clock signal, a first pump clock signal to a first VWL pump, and a second pump clock signal to a second VWL pump. Another aspect includes generating a VWL based on the first VWL pump and the second VWL pump, wherein the VWL is provided to a word line driver of a computer memory module. Another aspect includes comparing the VWL to a VWL reference voltage. Another aspect includes, based on the VWL being below the VWL reference voltage, disabling the first VWL clock generator, wherein the first VWL pump and the second VWL pump are disabled based on disabling the first VWL clock generator.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

Abstract: A power-supply device and an electronic device including the relate to technology for a data storage device. The electronic device includes a power-supply device and a controller. The power-supply device generates a sudden power loss (SPL) detection signal in a sudden power off (SPO) state by detecting a level of an external power, generates a charging sense signal indicative of a charging capacity of an auxiliary power-supply circuit, divides the charging capacity into a plurality of charging levels, detects a level of the charging capacity, and generates a charging sense signal indicating a charging level of the auxiliary power-supply circuit in response to the detected charging level. The controller stores flushing information in at least one non-volatile memory device when the SPL detection signal is activated, and variably adjust an amount of storage in the non-volatile memory device in response to the charging sense signal.

Abstract: The present disclosure includes apparatuses and methods for providing power availability information to memory. A number of embodiments include a memory and a controller. The controller is configured to provide power and power availability information to the memory, and the memory is configured to determine whether to adjust its operation based, at least in part, on the power availability information.

Abstract: A memory macro includes: word lines; memory cells arranged in an array, the array including rows and columns, the rows corresponding to the word lines, each memory cell being configured to receive a first reference voltage, and each column having voltage supply nodes corresponding to corresponding ones of the memory cells in the column; and switching circuits corresponding to the columns, each switching circuit being configured to selectively provide a first voltage value of a first voltage source or a second voltage value of a second voltage source to the voltage supply nodes; and wherein the first and second voltage values differ by a predetermined voltage value; each of the first and second voltage values is different than a second reference supply voltage; and the word lines are configured to receive the second voltage value as a voltage value representing a high logical value of the word lines.

Abstract: A memory device and a method of assisting a read operation in the memory device are introduced. The memory device may include a logic circuit, a charge pump, a switch and a sense amplifier. The logic circuit is configured to receive at least one input signal and perform a logic operation on the at least one input signal to output an enable signal. The charge pump is coupled to the logic circuit and is configured to generate a boost voltage according to the enable signal. The switch is coupled between the charge pump and a sensing power supply line, and is configured to control an electrical connection between the charge pump and the sensing power supply line according to the enable signal to supply the boost voltage to the sensing power supply line. The sense amplifier is configured to perform a read operation using the boost voltage from the sensing power supply line.

Abstract: A method includes receiving a first signal at an input of a device driver included at an electronic device, the first signal representing first information. A second signal representing the first information is provided at an output of the device driver. The output of the device driver, under normal operating conditions, is coupled to an output terminal of the electronic device. A third signal at the output terminal is received at feedback circuitry of the electronic device. The feedback circuitry identifies a fault at the output terminal based on the third signal and the first signal.

Abstract: A circuit structure is electrically connected to a power source. The circuit structure includes a first circuit module and a second circuit module. The first circuit module includes a first module power switch and a plurality of circuits. The first module power switch is electrically connected to the power source. The first circuit module has a first module current. The second circuit module includes a second module power switch and a plurality of circuits. The second power switch is electrically connected to the power source. The second circuit module has a second module current. A turn-on order of the first module power switch and the second power switch is determined based on the first module current and the second module current.

Abstract: A data receiving stage circuit of a memory circuit receives a serial input signal and a chip enable signal. A data writing circuit of the memory circuit generates at least one of a command signal and a data signal according to the serial input signal. A power supply circuit of the memory circuit generates an operating voltage for a memory cell array to perform a data access operation. A data output stage circuit of the memory circuit outputs a readout data. A controller of the memory circuit performs a switching operation of an operating state of the memory circuit according to a change of the chip enable signal. The controller determines a disable or enable state of the data receiving stage circuit, the data writing circuit, the power supply circuit, and the data output stage circuit according to the operating state.

Abstract: A variable-frequency electric charge pump unit, a chip, and a communication terminal. The electric charge pump unit comprises a variable-frequency signal generator, an electric charge pump circuit, and a voltage detector connected in series. The variable-frequency signal generator outputs a clock signal for the electric charge pump circuit. The electric charge pump circuit generates an output voltage on the basis of the clock signal. The output voltage drives a load on the one hand and is connected to the voltage detector on the other hand. An output end of the voltage detector is connected to the variable-frequency signal generator. The working frequency of the variable-frequency signal generator can be adjusted dynamically on the basis of a requirement that a radiofrequency system work state has on the driving output of the electric charge pump unit.

Abstract: An apparatus that includes an interposer, first power connectors that are disposed on a first surface and that receive respective power inputs from one or more power sources, second power connectors that are disposed on the second surface and that receive a respective third power connector of an integrated circuit when the integrated circuit is mounted on the second surface of the interposer, a plurality of switches formed within the interposer, control circuitry formed within the interposer, and a sequencer circuit coupled to the control input of the control circuitry and that generates a different values for a control input signal that causes the control logic of the control circuitry to generate a corresponding set of switch signals, and the plurality of different values for the control input signal are generated according to a predefined sequence to provide power to the integrated circuit according to power up sequence.

Abstract: A semiconductor module, comprising: a module substrate with an electric connection element; at least one semiconductor package provided on the module substrate, the at least one semiconductor package including a plurality of semiconductor chips; and a connection region electrically connecting the semiconductor package to the module substrate, wherein the connection region comprises: a first region electrically connected between data signal terminals of a first chip of the semiconductor chips of the semiconductor package and the module substrate; a second region electrically connected between data signal terminals of a second chip of the semiconductor chips of the semiconductor package and the module substrate; and a third region electrically connected between command/address signal terminals of both the first and second chips of the semiconductor package and the module substrate, wherein the first region is closer to the electric connection element of the module substrate, compared with the third region.

Abstract: A charge pump circuit includes a voltage input port, a voltage output port, a plurality of charge pump units cascaded between the voltage input port and the voltage output port, a clock signal source, and N clock delay elements. The clock signal source generates a main clock signal and the N clock delay elements generate clock signals received by the charge pump units by delaying the main clock signal. The main clock signal received by the first charge pump unit has a rising edge leading a rising edge of the last clock signal received by the last charge pump unit, and a falling edge lagging the rising edge of the last clock signal. Each of the charge pump units includes two sets of inverters with delay elements for generating two complementary clock signals.

Abstract: A charge pump includes a first pumping capacitor configured to pump a first voltage of a first node, in response to a first clock signal, a gate pumping capacitor configured to pump a second voltage of a second node, in response to a second clock signal, a charge transfer transistor including a first source connected to a first one of a third node and the first node, a first gate connected to the second node, and a first drain connected to a remaining one of the first node and the third node, a gate control transistor including a second source connected to the first one of the third node and the first node, a second gate connected to the remaining one of the first node and the third node, and a second drain connected to the second node, and a gate discharge or charge unit.

Abstract: A voltage control device includes a first charge pump, a first power switch, a second charge pump, a second power switch, and a third power switch. The first charge pump generates a first application voltage according to the first system voltage. The first power switch has a first input terminal for receiving the first system voltage, a second input terminal for receiving the first application voltage, and an output terminal. The second charge pump generates a second application voltage according to a voltage received by the input terminal of the second charge pump. The second power switch has an input terminal for receiving the second application voltage, and an output terminal. The third power switch has a first input terminal coupled to the output terminal of the first charge pump, a second input terminal coupled to the output terminal of the second charge pump, and an output terminal.

Abstract: Methods for powering up a memory device, for example, are disclosed. One such memory device includes power up circuitry configured to receive an external power supply and to provide an internal power supply to the memory device upon receipt of a command. The power up circuitry may be configured to provide the internal power supply limited to a peak current, or may be configured to provide the internal power supply not limited to a peak current. The memory device may be, for example, a synchronous dynamic random access memory (SDRAM) device or Flash memory.

Abstract: A memory circuit includes a memory cell, a first program driver, a second program driver, and a sensing amplifier. A method for operating the memory circuit includes, during a program operation of the memory cell, providing a program voltage to the memory cell, enabling the first program driver to drive the first local bit line to be at a low voltage, enabling the second program driver, disabling the first program driver, and enabling the sensing amplifier to verify whether the first memory cell has been programmed or not. The second program driver has a weaker driving ability than the first program driver.

Abstract: A memory device may include one or more circuit boards. Additionally, memory circuitry and an energy storage device may be disposed on the one or more circuit boards. The energy storage device may supplant or supplement an external power source, for example, when power of the external power source is eliminated or insufficient.