Abstract: Wordline-driver biasing and column-based source-biasing circuitry facilitate reduced current leakage, for example, in SoC device SRAM circuits in a manner that is independent of the read/write/standby operating mode, and without an external trigger. Wordline-driver-biasing circuitry turns off (i.e., decouples from system power) wordline-drivers that are connected to unselected wordlines during read/write operations using one of a decoder-enable signal, which is generated in response to row address values, or based on the activation of a self-timing internal clock, which is generated by the memory circuit when it is activated (i.e., switched from standby to read/write mode). Alternatively, or in addition, source-biasing circuitry applies a relatively high source-biasing voltage to the source terminals of memory cells in unselected columns during read/write operations based on column address values (i.e., a low source voltage is applied only to the selected column being written to or read from).

Abstract: Such a device is disclosed that includes an internal voltage generating circuit generating an internal voltage by lowering an external potential and supplying the generated internal voltage to a power supply line, a switch being connected between a grounding wire to which a ground voltage is supplied and the power supply line, and a one-shot signal generating unit controlling turning on and off of the switch, wherein the one-shot signal generating unit brings the switch into conduction synchronously with start of generating the internal voltage by the internal voltage generating circuit.

Abstract: Methods, systems, and structures for generating a target reference voltage are provided. A circuit includes a voltage adjuster, a switch, and a current source. The switch selectively connects the current source to circuit paths in the voltage adjuster. A first of the circuit paths incrementally decreases the target reference voltage with respect to the input voltage. A second of the circuit paths incrementally increases the target voltage with respect to the input voltage.

Abstract: A driver for semiconductor memory, comprising: a storage unit configured to match and store a memory cell address and bucket charge current data corresponding to the memory cell address; a selection controller configured to receive the memory cell address and a target charge current data, and output a bucket charge current select signal and a target charge current select signal corresponding to the bucket charge current data and the target charge current data, respectively, by referring to the storage unit; and a current supply unit configured to supply a bucket charge current and a target charge current in response to the bucket charge current select signal and the target charge current select signal, respectively.

Abstract: According to an embodiment, an apparatus includes a data storage device. Data to be stored in the data storage device is level shifted from a first voltage domain to a second voltage domain prior to being stored within the data storage device. The data storage device is powered by the second voltage domain. The apparatus further includes a circuit that is powered by the second voltage domain and that is responsive to data output by the data storage device.

Abstract: In a semiconductor device including a row-based control circuit applied with a current reduction circuit having a standby state and an active state, a refresh control circuit generates a refresh request signal every predetermined time interval on a self-refresh mode and time-sequentially generates an internal active signal at N times in connection with the refresh request signal once. The row-based control circuit time-sequentially refreshes information of memory cells on the based of the internal active signal at the N times. The refresh control circuit inactivates the row-based control circuit by making the current reduction circuit the standby state.

Abstract: A semiconductor device includes NAND gates and switches to form a circuit to hold data, and a capacitor electrically connected to the circuit via a transistor to store the data held in the circuit. The transistor has a channel formation region including an oxide semiconductor.

Abstract: To provide a semiconductor device including a plurality of circuit blocks each of which is capable of performing power gating by setting off periods appropriate to temperatures of the respective circuit blocks. Specifically, the semiconductor device includes an arithmetic circuit, a memory circuit configured to hold data obtained by the arithmetic circuit, a power supply control switch configured to control supply of the power supply voltage to the arithmetic circuit, a temperature detection circuit configured to detect the temperature of the memory circuit and to estimate overhead from the temperature, and a controller configured to set a period during which supply of the power supply voltage is stopped in the case where a power consumption of the arithmetic circuit during the period is larger than the overhead period and to control the power supply control switch.

Abstract: The semiconductor device includes a first channel region suitable for including a first pad region and a first core region and receiving a first power signal through a first power line, a second channel region suitable for including a second pad region and a second core region and receiving the first power signal through a second power line, and a switch unit suitable for electrically disconnecting the second power line from a first power stabilization unit if a predetermined operation of the first channel region is performed and electrically disconnecting the first power line from the first power stabilization unit if the predetermined operation of the second channel region is performed.

Abstract: The present disclosure includes methods for operating a memory system, and memory systems. One such method includes updating transaction log information in a transaction log using write look ahead information; and updating a logical address (LA) table using the transaction log. The write look ahead information can include information about the location where data would have next been written to a memory system.

Abstract: In an organic memory which is included in a radio chip formed from a thin film, data are written to the organic memory by a signal inputted with a wired connection, and the data is read with a signal by radio transmission. A bit line and a word line which form the organic memory are each selected by a signal which specifies an address generated based on the signal inputted with a wired connection. A voltage is applied to a selected memory element. Thus writing is performed. Reading is performed by a clock signal or the like which are generated from a radio signal.

Abstract: A semiconductor device includes: a plurality of target lines to be driven; a plurality of target line drivers configured to drive the corresponding target lines in a logic level corresponding to a plurality of target line selection signals; a plurality of booster enable units configured to generate a booster enable signal by sensing whether a group of target lines that is obtained by grouping the target lines by a predetermined number is enabled or not; and a plurality of self-boosters configured to boost corresponding target lines by sensing levels of the corresponding target lines in response to the booster enable signal.

Abstract: A shared-signaling multi-device memory system is capable of changing between addressing modes without the multi-device memory being required to undergo a power cycle. First and second registers of a memory device are set to both contain first address-identification information in response a first address-assignment command that is received a power cycle. The first register is set to contain second address-identification information in response a second address-assignment command that is received subsequently to the first address assignment command. Depending on the value of the second address-identification information, the memory device is configured in an individual-device-addressing mode or a parallel addressing mode without a power cycle. The first register can be reset to the first address-identification information contained in the second register in response to an address-restore command without a power cycle. A corresponding method is also disclosed.

Abstract: According to one general aspect, a method may include, in one embodiment, grouping a plurality of at least single-ported memory banks together to substantially act as a single at least dual-ported aggregated memory element. In various embodiments, the method may also include controlling read access to the memory banks such that a read operation may occur from any memory bank in which data is stored. In some embodiments, the method may include controlling write access to the memory banks such that a write operation may occur to any memory bank which is not being accessed by a read operation.

Abstract: A voltage generating circuit includes first and second step-up circuits, each having first and second input terminals and an output terminal and configured to increase a voltage level of an input signal supplied through the first input terminal and output the signal with the increased voltage level through the output terminal. The second input terminal of the first step-up circuit is connected to the output terminal of the second step-up circuit and the second input terminal of the second step-up circuit is connected to the output terminal of the first step-up circuit. The voltage generating circuit may also include third and fourth step-up circuits and fifth and sixth step-up circuits having similar configurations.

Abstract: A semiconductor device comprises a bit determination circuit to count the number of bits at a first level in an input address signal formed of a plurality of bits and to output a result indicating whether or not a value of the count exceeds a predetermined determination threshold value, as a bit determination result signal, and a selection control circuit to select a non-volatile program element to be cut off, based on the bit determination result signal and the address signal. Additional apparatus and methods are described.

Abstract: The present invention provides the low power protection circuit including a first voltage detector, a pulse generating circuit, a SR latch, and an output logic operation circuit. The low power protection circuit is adapted for a dynamic random access memory (DRAM) with dual operating voltages. The first voltage detector generates a high-voltage pump enable signal by detecting a voltage level of the power-up signal. The pulse generating circuit generates a power-up pulse according to the power-up signal. The SR latch receives the power-up pulse, the high-voltage pump enable signal and an inverted power-up signal, and generates an output signal. The second voltage detector generates a low-voltage pump enable signal by detecting a voltage level of the output signal. The output logic operation circuit generates a pump enable signal according to the low-voltage pump enable signal and the high-voltage pump enable signal.

Abstract: One embodiment provides a look-up table circuit, including: 2i memories, a half of which constituting a first memory group, the other half of which constituting a second memory group; first to i-th input terminals to which first to i-th input signals are input, respectively; a first output terminal; a switch group that selectively connects one of the memories to the first output terminal according to the first to i-th input signals; a first power-off switch that shuts off power supply to the first memory group in response to one of the first to i-th input signals; and a second power-off switch that shuts off power supply to the second memory group in response to the one of the first to i-th input signals.

Abstract: A semiconductor memory device according to an embodiment comprises: a memory cell array including memory cells, each of the memory cells disposed at each of intersections of first lines and second lines and including a variable resistor; and a control circuit configured to apply a first voltage to a selected first line and to apply a second voltage having a voltage value which is smaller than that of the first voltage to a selected second line, such that a selected memory cell is applied with a first potential difference required in an operation of the selected memory cell. The control circuit is configured such that when the first potential difference is applied a plurality of times to a plurality of the selected memory cells to execute the operation, the number of selected memory cells simultaneously applied with the first potential difference can be changed.

Abstract: A nonvolatile memory apparatus includes a memory cell array including a plurality of sub arrays. A plurality of analog-to-digital converters (ADCs) configured to sense sensing voltages outputted from memory cells of the plurality of sub arrays and a path selection unit configured to electrically couple the plurality of sub arrays with the plurality of ADCs in one-to-one correspondence in a first operation mode, and electrically couple the plurality of ADCs with a terminal of a power supply voltage in a second operation mode.

Abstract: The present invention provides the low power protection circuit including a first voltage detector, a pulse generating circuit, a SR latch, and an output logic operation circuit. The low power protection circuit is adapted for a dynamic random access memory (DRAM) with dual operating voltages. The first voltage detector generates a high-voltage pump enable signal by detecting a voltage level of the power-up signal. The pulse generating circuit generates a power-up pulse according to the power-up signal. The SR latch receives the power-up pulse, the high-voltage pump enable signal and an inverted power-up signal, and generates an output signal. The second voltage detector generates a low-voltage pump enable signal by detecting a voltage level of the output signal. The output logic operation circuit generates a pump enable signal according to the low-voltage pump enable signal and the high-voltage pump enable signal.

Abstract: Semiconductor devices comprising at least one voltage sensor for sensing an operating voltage associated with an operational circuit of the semiconductor device. The at least one voltage sensor is configured to generate a signal indicative of a state of the operating voltage. Methods of monitoring a voltage in a semiconductor device include determining a magnitude of an operating voltage for an operational circuit in a semiconductor device. A signal may be generated indicating a state of the operating voltage.

Abstract: A first transistor is turned on based on a first control signal provided to a first terminal of the first transistor. A second transistor is turned on based on a second control signal delayed by a time delay from the first control signal. A second terminal of the first transistor is coupled with a second terminal of the second transistor. The second control signal is used to control a first input signal of a logic device. The logic device receives a second input signal inversed from the first control signal. An output signal of the logic device is used to control a first terminal of the second transistor.

Abstract: According to one general aspect, an apparatus may include a first power supply configured to generate a first power signal having one of a plurality of voltages, and a second power supply configured to generate a second power signal that includes a voltage equal to or higher than a voltage of the first power signal. The apparatus may include a first electrical circuit configured to be powered by the first power supply. The apparatus may also include a power mode controller configured to: determine the voltage of the first power signal during the next power state, and generate a selector control signal based upon the voltage of the first power signal. The apparatus may also include a power supply selector configured to dynamically electrically couple a second electrical circuit with either the first power signal or the second power signal, based upon the selector control signal.

Abstract: Exemplary embodiments may disclose a flip-flop circuit for inserting a zero-delay bypass mux including a master circuit which is configured to receive a data input, an input clock signal, and a bypass signal, and output an intermediate signal to a first node; and a slave circuit which is configured to receive the intermediate signal at the first node, the input clock signal, and the bypass signal, and output an output clock signal. The bypass signal controls the slave circuit to output one of a buffered input clock signal and a stretched clock signal as the output clock signal based on a logic level of the bypass signal.

Abstract: A multi-channel memory device includes a first channel memory and a second channel memory that are independently accessible within a same chip and that respectively include first and second power channel connection lines; a decoupling unit that can operationally connect or separate the first and second power channel connection lines in response to a decoupling driving signal; and a switching control unit that can apply the decoupling driving signal to the decoupling unit in response to a channel power control signal such that power supply voltages independently applied to the first and second channel memories are respectively used in corresponding first and second power channel connection lines.

Abstract: A secondary memory unit includes a first substrate that has a non-volatile memory unit mounted thereon that is configured to receive power from an external power supply. A second substrate has an energy storage and supply medium mounted thereon. An energy transfer medium is provided that electrically connects the first substrate and the second substrate. The energy storage and supply medium is configured to supply an operating power to the non-volatile memory unit when power from the external power supply to the non-volatile memory unit is cut off.

Abstract: A bit line power implementing circuit is provided, the bit line power implementing circuit has a bit line discharge oscillator to convert the supply voltage to a pulse; a decoder coupled to the bit line discharge oscillator to decode the pulse, and providing a first pulse with a first frequency and a second pulse with a second frequency; a first and a second counters, coupled to the decoder, and receiving the first and the second pulses respectively, and outputting a signal proportional to an average and a minimum read currents respectively; a divider outputting a read current ratio of the average read current to the minimum read current; and a multiplier for multiplying the supply voltage the read current ratio to output a bit line power consumption corresponding to the supply voltage.

Abstract: Embodiments are described for a method for regulating sleep mode of a plurality of sub-banks in an SRAM array by isolating all of the sub-banks from a regulator upon access to at least one sub-bank that causes the accessed sub-bank to go to an operating voltage, and isolating the accessed sub-bank from non accessed sub-banks, while maintaining a sleep voltage on a load memory array and each of the sub-banks through the regulator; comparing a voltage on the non accessed sub-banks to a voltage output of the regulator; and providing a sleep voltage level to all of the sub-banks through the regulator when the voltage on the non accessed sub-banks is less than the sleep voltage.

Abstract: An integrated circuit includes a plurality of internal circuits, an e-fuse array circuit configured to store a data used by the internal circuits, and a fuse circuit configured to store a trimming data to set the e-fuse array circuit.

Abstract: A semiconductor memory device includes at least one memory cell connected to an internal voltage line that receives a cell power supply voltage and a write assist circuit connected to the internal voltage line. The write assist circuit lowers a level of the cell power supply voltage to a target level during a first period of a write operation on the memory cell and maintains the level of the cell power supply voltage at the target level during a second period of the write operation based on a write assist control signal. The second period succeeds the first period.

Abstract: A memory device comprises one or more power gates and state signaling circuitry. Each of the one or more power gates is configurable such that a respective portion of the memory device is powered down. The state signaling circuitry is operative to produce a power state output signal indicative of when the one or more power gates are configured such that the memory device is fully powered up.

Abstract: In various embodiments, a memory device includes at least one memory cell and at least one virtual supply line coupled to the at least one memory cell. The memory device is designed in such a way that a voltage potential present on the virtual supply line is altered after an active access to the memory cell by virtue of a charge stored within the memory device during the active access being re-stored in such a way that a state of the memory cell with a reduced leakage current consumption is achieved.

Abstract: A semiconductor memory device includes a plurality of first regions formed in a line-type and extending in a first direction, and a plurality of second regions and a plurality of third regions arranged between adjacent first regions in a zigzag manner.

Abstract: Voltage control in integrated circuits include a first voltage divider coupled to receive a reference voltage and having an output providing an adjusted reference voltage; an operational amplifier having a first input coupled to receive the output of the first voltage divider, a second input coupled to receive a feedback voltage, and an output; a voltage generation circuit responsive to the output of the operational amplifier and having an output providing an output voltage; and a second voltage divider coupled to receive the output voltage and having an output providing the feedback voltage. The first voltage divider is responsive to first control signals to adjust a voltage level of the adjusted reference voltage. The second voltage divider is responsive to second control signals to adjust a voltage level of the feedback voltage.

Abstract: A circuit includes a voltage generating circuit and a voltage keeper circuit. The voltage generating circuit includes a first node. The voltage keeper circuit includes a second node and a third node. The first node is coupled with the second node. The voltage generating circuit is configured to generate a voltage value at the first node and the second node to maintain the third node at a particular third node voltage.

Abstract: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.

Abstract: A method and apparatus for memory power and/or area reduction. An array of memory cells may be scanned to detect faulty memory cells, if any, in the array. A supply voltage Vmem applied to the array of memory cells may be controlled based on a result of the scan, and based on a sensitivity coefficient of one, or more, of the array of memory cells. The sensitivity coefficient may indicate an impact that the one, or more, of the array of memory cells being faulty may have on the performance of a device that reads and writes data to the memory array. Additionally or alternatively, the physical dimensions of the memory cells may be determined based on the sensitivity coefficient(s) and/or based on a number of faulty memory cells that can be tolerated in the array of memory cells.

Abstract: A digital voltage boost circuit, optionally working in parallel with an analog voltage regulator, periodically injects a constant amount of current each cycle into the bit line of a high density memory array to eliminate the bias voltage reduction which would otherwise occur. This results in a much faster recovery time and reduces the semiconductor real estate required. A pulse generator in the boost circuit generates one or more current modulation signals which control corresponding current supply devices in a current source. The boost circuit drives a constant amount of current to the bias voltage node each memory cycle.

Abstract: A system for managing redundancy in a memory device includes memory arrays and associated periphery logic circuits, and redundant memory arrays and associated redundant periphery logic circuits. The memory arrays and a first set of logic circuits associated with the periphery logic circuits corresponding to the memory arrays are connected to the power supply by way of memory I/O switches. The redundant memory arrays and associated redundant periphery logic circuits are connected to the power supply by way of redundant I/O switches. The memory and redundant I/O switches are switched on/off based on an acknowledgement signal generated during a built-in-self-test (BIST) operation of the memory device.

Abstract: A semiconductor circuit includes a first input section into which a first input signal is inputted, a second input section into which a second input signal is inputted, an output generation circuit which is connected to the first and second input sections and generates an output signal based on the input signals, an output section which outputs the output signal, and a current source which is connected to connection nodes between the input sections and the output generation circuit.

Abstract: A negative voltage generator includes a variable-capacitance negative voltage generating unit, a switching unit and a positive voltage applying unit. The negative voltage generating unit includes a plurality of coupling capacitors for varying the capacitance in which the negative voltage is charged. The negative voltage generating unit selects at least one coupling capacitor of the plurality of coupling capacitors according to the number of rows (size) of a memory bank to which data is written, and charges the at least one selected coupling capacitor to a negative voltage. The switching unit selects one bitline of a bitline pair having complementary first and second bitlines in response to the data, and connects the at least one selected coupling capacitor to the selected bitline. The positive voltage applying unit applies a positive (high) voltage to an other bitline of the bitline pair.

Abstract: A semiconductor chip package eliminates and minimizes a power noise generated from a voltage generation circuit in the semiconductor chip package includes an integrated circuit chip with a voltage generation circuit that receives an external voltage to generate a supply voltage to be used in an internal circuit and a connection terminal connected to an output node of the voltage generation circuit, and a mounting substrate including a noise eliminator electrically connected to the connection terminal to reduce a power noise of the supply voltage and a mounting substrate to mount the integrated circuit chip to package the integrated circuit chip as the semiconductor chip package.

Abstract: A memory is disclosed that includes a plurality of memory cells, a plurality of sense amplifiers for reading data of the memory cells, and a voltage regulator coupled to the plurality of sense amplifiers. The voltage regulator includes a reference sense amplifier, a current injector, and a current injector control circuit. The current injector control circuit controls an amount of current provided by the current injector to an output node of the voltage regulator based on a voltage of the reference sense amplifier.

Abstract: A memory cell is provided. The memory cell comprises a write port and a read port. The write port comprises a pair of cross-coupled inverters and a plurality of metal lines. The first inverter comprises a first pull-up device and a first pull-down device. The second inverter comprises a second pull-up device and a second pull-down device. The metal lines comprise a Vcc conductor line, a first Vss conductor line, and a second Vss conductor line. The first pull-down device has a source terminal coupled to the first Vss line. The second pull-down device has a source terminal coupled to the second Vss line. The read port comprises a cascaded device, a read word line, read bit line and a third Vss conductor line. The cascaded device comprises a read pull-down device and a read pass device. The read pull-down device has a source terminal coupled to the third Vss conductor line. The read pass device has a drain terminal coupled to the read bit line.

Abstract: In a nonvolatile memory array, power is provided to groups of memory dies by power management circuits that have different power modes. While one power management circuit is in a high-power mode supplying power for power-hungry memory operations, another power management circuit is in a low-power mode so that overall power usage is balanced.

Abstract: A write and/or read current generator for nonvolatile memory device, especially for Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM), may include a current supplying circuit which changes a level of a sample current, determines a resistance state change current of a sample bit cell based on a feedback signal obtained through the sample bit cell whose resistance state is changed according to a level of the sample current. The current supplying circuit may calibrate a write and/or read current of a memory cell in response to a sample current applied at a point of time when a resistance state of the sample bit cell is switched into another resistance state. A calibration circuit may generate the feedback signal indicating a resistance area of a predetermined resistance range to which a resistance state of the sample bit cell belongs.

Abstract: To realize an optimal power-on reset in a system in which the rise of the power supply voltage is sharp. A semiconductor device according to the present invention includes two diodes connected in parallel between power supplies, and a resistor circuit and a capacitance element connected in parallel between one power supply and each of the two diodes, and outputs a comparison result between voltages outputted from the two resistor circuits as a reset signal.

Abstract: A memory circuit includes a voltage boosting circuit for generating a voltage that exceeds a voltage supply of the voltage boosting circuit. The voltage boosting circuit includes a first transistor having a first polarity type and a second transistor having a second polarity type opposite the first transistor. The first transistor is a planar transistor, a source of the first transistor being connected with the voltage supply, and a gate of the first transistor receiving a control signal. The second transistor includes a gate formed in at least two planes. A source of the second transistor is connected with the voltage supply, a gate of the second transistor receives the control signal, and a drain of the second transistor is connected with a drain of the first transistor and forms an output of the voltage boosting circuit for generating a boosted supply voltage as a function of the control signal.

Abstract: A semiconductor device comprises a first pair of signal lines and a first control circuit. The first control circuit precharges each of the first pair of signal lines to a first voltage in response to a precharge signal, and changes the voltage level of each of the first pair of signal lines to a second voltage different from the first voltage when a deep power down signal is input.