Abstract: An electrical circuit contains volatile states that are lost without continued application of power to circuit elements to preserve their volatile states. A first power source in the circuit provides power to the volatile state circuit for holding and preserving their volatile states. A power selection circuit is coupled to the circuit elements and has a plurality of selectable modes. A first mode of operation of the power selection circuit is selected when the circuit elements are to be operated at a first power level via the first power source which constitutes a first mode of operation. A second mode of operation is selected when the volatile state circuit elements are to be operated under a condition where the first power source is inactivated, such as, for example, during a circuit backup or standby operation.

Abstract: A CPU (1) automatically preserves the CPU context in a computer memory (5) that remains powered-up when the CPU is powered down in sleep mode. By means of the preserved CPU context, the CPU is able to instantly and transparently resume program execution at the instruction of the program that was asserted for execution when the CPU was powered down. The CPU is permitted to power down frequently, even during execution of a program, and results in reduced average overall power consumption.

Abstract: A backup volatile state retention circuit is provided with low leakage current for employment with a volatile memory circuit to store the value of the latter during power down of the volatile circuit or during power-down or inactivation of neighboring or peripheral circuits or due to the loss of power of any of these circuits. An example of such a volatile circuit is a memory circuit having volatile memory cells such as employed in dynamic memory core, in particular, a random access memory (RAM) in CMOS circuitry.

Abstract: Storage apparatus can support various memory units with different standards based on the method which drives the power control-and-switch circuit in the power management unit according to a control signal caused by the ID code of a memory unit to control the second booster for further increasing the level of the external voltage or control the second regulator for further regulating or decreasing the level of the external voltage.

Abstract: A Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) array including a plurality of bit cells, a power-up controller, and a first plurality of precharge transistors is disclosed. The plurality of bit cells are each coupled to one of a plurality of bit lines and word lines. The power-up controller is configured to provide a power-up control signal to control the voltage level of at least one of the bit lines or the word lines during power-up. The first plurality of precharge transistors are respectively coupled to at least one of the plurality of bit lines or the plurality of word lines, each precharge transistor being configured to discharge a corresponding bit line or word line to a desired voltage level based on the power-up control signal.

Abstract: A semiconductor device according to the present invention comprises a first non-volatile memory, a second non-volatile memory in which initial data is stored, and an initialization controller for initializing the first non-volatile memory, wherein the second non-volatile memory has anti-stress properties higher than those of the first non-volatile memory, and the initialization controller reads the initial data from the second non-volatile memory when the first non-volatile memory is initialized and copies the read initial data in the first non-volatile memory to thereby initialize the first non-volatile memory.

Abstract: A semiconductor device, including a word line driver for driving a word line connected to a memory cell in a memory cell array and for resetting the word line when the memory cell changes from an activated to a standby state. The reset level of the word line driver is set when resetting of the word line is performed, and may be switched between first and second potentials. A word line reset level generating circuit varies the amount of negative potential current supply in accordance with memory cell array operating conditions. The semiconductor device includes a plurality of power source circuits, each having an oscillation circuit and a capacitor, for driving the capacitor via an oscillation signal outputted by the oscillation circuit. At least some power source circuits share a common oscillation circuit, and different capacitors are driven via the common oscillation signal.

Abstract: In a voltage generating circuit for a semiconductor memory device, each of a plurality of reset signal generators individually generates a reset signal in response to one of a plurality of external source voltages. The plurality of external source voltages have different voltage levels. An output voltage generator generates a plurality of output voltages by independently driving each of the plurality of external source voltages in response to a corresponding one of the plurality of reset signals. The output voltage generator outputs the plurality of output voltages through a common output terminal.

Abstract: A static memory cell, composed of cross-coupled MOS transistors having a relatively high threshold voltage, is equipped with MOS transistors for controlling the power supply line voltage of the memory cell. To permit the voltage difference between two data storage nodes in the inactivated memory cell to exceed the voltage difference between the two nodes when write data is applied from a data line pair DL and /DL to the two nodes in the activated memory cell, the power supply line voltage control transistors are turned on to apply a high voltage VCH to the power supply lines after the word line voltage is turned off. The data holding voltage in the memory cell can be activated to a high voltage independent of the data line voltage, and the data holding voltage can be dynamically set so that read and write operations can be performed at high speed with low power consumption.

Abstract: A power supply circuit for a sense amplifier of a semiconductor memory device includes a first reference voltage supplier configured to output a first reference voltage when a control signal is activated upon a write operation, a second reference voltage supplier configured to output a second reference voltage when the control signal is deactivated upon a read operation, and a core voltage source configured to receive the first reference voltage or the second reference voltage and generate a core voltage.

Abstract: An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.

Abstract: Integrated circuits contain core logic that is powered using a power supply signal. The core logic contains simultaneously switching circuitry. The simultaneously switching circuitry contributes to noise on the power supply signal. Balancing circuitry may be provided on the integrated circuit to compensate for the simultaneously switching circuitry in the core logic. The balancing circuitry may receive an input signal that is out of phase with respect to the input to the core logic. As the balancing circuitry switches out of phase with the simultaneously switching circuitry of the core logic, the noise contribution from the core logic is compensated and power supply noise on the power supply signal is minimized.

Abstract: A memory system and method are described. For example, a memory cell includes a capacitance and an access circuit in association with the capacitance and having an access circuit terminal. The memory cell further includes a voltage control unit to adjust a potential at the access circuit terminal in a retention state such that a retention time of the memory cell is increased. A method of operating a memory cell includes, for example, adjusting a potential at an access circuit terminal of the memory cell to increase a retention time.

Abstract: A device is disclosed having a low-voltage memory device. The device includes a first memory having a first memory topology and a second memory having a second memory topology, with both memories located in an integrated circuit. The first memory is a relatively high-density memory device, capable of storing large amounts of data relative to the second memory. The second memory is a low-voltage memory device capable of being accessed at low-voltages relative to the voltage at which the first memory can be accessed. Accordingly, the second memory is accessible when the integrated circuit is placed in a low-voltage mode of operation, which may represent a data retention state (sleep state) for the first memory or other portions of the integrated circuit. Thus, the device is able to store large amounts of data in the high density memory in a normal or active mode of operation, and also have access to the low-voltage memory during the low-voltage mode of operation.

Abstract: A system, method, and computer program product are provided for driving a memory circuit. In one embodiment, the memory circuit is driven utilizing a first resistance value in a first mode of operation. Further, in a second mode of operation, the memory circuit is driven utilizing a second resistance value. In another embodiment, a device is provided for driving a memory circuit without active termination utilizing a resistor.

Abstract: Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store data stored in the floating body under any one of a plurality of predetermined conditions. A method of operating semiconductor memory to function as volatile memory, while having the ability to retain stored data when power is discontinued to the semiconductor memory is described.

Abstract: An integrated cell for extracting a binary value based on a value difference between two resistors values, including connection circuitry for a binary reading of the sign of the difference between the resistors, and connection circuitry for a modification of the value of one of the resistors to make the sign of the difference invariable.

Abstract: Circuitry and methods for restoring data in memory are disclosed. The memory may include at least one layer of a non-volatile two-terminal cross-point array that includes a plurality of two-terminal memory elements that store data as a plurality of conductivity profiles and retain stored data in the absence of power. Over a period of time, logic values indicative of the stored data may drift such that if the logic values are not restored, the stored data may become corrupted. At least a portion of each memory may have data rewritten or restored by circuitry electrically coupled with the memory. Other circuitry may be used to determine a schedule for performing restore operations to the memory and the restore operations may be triggered by an internal or an external signal or event. The circuitry may be positioned in a logic layer and the memory may be fabricated over the logic layer.

Abstract: A memory circuit includes a plurality of word lines, a plurality of bit lines, and a plurality of memory cells. Configurations of the plurality of memory cells are determined depending on the data (“high” or “low”) which is stored in the memory cells. Data array such as a program stored in the memory circuit is analyzed in advance. In the case where “high” is the majority data, memory cells storing “high” are formed with vacant cells in which a semiconductor element is not formed.

Abstract: A memory module is provided comprising a substrate having an interface to a host system, volatile memory, non-volatile memory, and a logic device. The logic device may receive the indicator of an external triggering event and copies data from the volatile memory devices to the non-volatile memory devices upon receipt of such indicator. When the indicator of the triggering event has cleared, the logic device restores the data from the non-volatile to the volatile memory devices. The memory module may include a passive backup power source (e.g., super-capacitor) that is charged by an external power source and temporarily provides power to the memory module to copy the data from volatile to non-volatile memory. A voltage detector within the memory module may monitor the voltage of an external power source and generates an indicator of a power loss event if voltage of the external power source falls below a threshold level.

Abstract: An apparatus includes logic to determine a discharge drop of a capacitor and to adjust an enablement charge level of the capacitor according to the discharge drop.

Abstract: A semiconductor integrated circuit able to operate by different power supply voltages resulting from fluctuations in production, provided with a process monitor circuit for obtaining a grasp of a delay characteristic corresponding to the conditions of a production process, a memory circuit for storing data concerning an extent of process variation acquired by the process monitor circuit, and a power supply voltage control circuit for adaptively controlling the power supply voltage in accordance with the extent of process variation acquired by the process monitor circuit and stored in the memory circuit, and a test method for guaranteeing the operation of the semiconductor integrated circuit.

Abstract: To make it possible to reliably halt writing processing while restraining erroneous writing to the memory unit, present apparatus has a memory unit to which data is written for each write request; a voltage converting unit which converts a first power source voltage into a first operable voltage with which a write request issuing unit is operable, and supplies the first operable voltage to the write request issuing unit; a voltage monitoring unit, which outputs an issuance restraining signal which restrains issuance of the write request, when the first power source voltage becomes lower than a reference voltage; and an issuance restrain controlling unit which receives the issuance restrain signal, and then after completion of writing for each of the write request to write memory unit, which restrains the issuance of the write request by the write request issuance unit.

Abstract: A power control circuit and related method providing power to an output terminal supplying a logic block within a semiconductor integrated circuit are disclosed. The power control circuit includes a power gating circuit providing a main power voltage to the output terminal during a normal operating mode and providing a retention voltage to the output terminal during a data retention mode characterized by the absence of the main power voltage from the logic block, wherein the retention voltage is minimally sufficient to retain data stored in the logic block during the data retention mode.

Abstract: A controller of a memory system is configured to reduce power requirements during memory backup transition. When transitioning to backup mode, the memory system controller performs a number of power saving techniques. The controller may change a number of configuration settings in the volatile memory system, such as reducing output driver strength, increasing differential impedance, increasing on-die termination, disabling receiver input circuitry, and disconnecting the termination voltage network. The controller may also assert a hard reset to the storage controller system to significantly reduce the load and allow the voltage regulator to continue to provide power to the memory system for a longer period of time.

Abstract: A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, a word line low voltage, or the like. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.

Abstract: A semiconductor memory cell and arrays of memory cells are provided In at least one embodiment, a memory cell includes a substrate having a top surface, the substrate having a first conductivity type selected from a p-type conductivity type and an n-type conductivity type; a first region having a second conductivity type selected from the p-type and n-type conductivity types, the second conductivity type being different from the first conductivity type, the first region being formed in the substrate and exposed at the top surface; a second region having the second conductivity type, the second region being formed in the substrate, spaced apart from the first region and exposed at the top surface; a buried layer in the substrate below the first and second regions, spaced apart from the first and second regions and having the second conductivity type; a body region formed between the first and second regions and the buried layer, the body region having the first conductivity type; a gate positioned between the

Abstract: An electronic data storage system uses current comparison to generate a voltage bias. In at least one embodiment, a voltage bias generator, that includes a current differential amplifier, generates a current that charges a load to a predetermined voltage bias level. The current comparison results in the comparison between two currents, Iref and Isaref. The current Isaref can be generated using components that match components in the load and memory circuits in the system. In one embodiment, multiple sense amplifiers represent the load. By using matched components, as physical characteristics of the load and memory circuits change, the current Isaref also changes. Thus, the voltage bias changes to match the changing characteristics of the load and memory circuits. The voltage bias generator can include a current booster that decreases the initial charging time of a reactive load.

Abstract: An integrated circuit includes a supply voltage controller operable to receive a plurality of control signals and at least one circuit supply voltage and to output at least one variable supply voltage to at least one supply terminal of the integrated circuit The controller is operable to switch the variable supply voltage to a first voltage level when the control signals define a first operation and to a second voltage level different from the first voltage level when the control signals define a second operation. The controller is also operable to float the variable supply voltage to a third voltage level different from the first voltage level when the control signals define a third operation.

Abstract: A circuit which includes an IP cell having a function select input signal line, combinatorial logic having an output connected to the function select input signal line of the IP cell, a configuration register having an output connected to an input of the combinatorial logic, wherein a high/low input signal line is also connected to the combinatorial logic, wherein the circuit provided that the configuration register receives configuration data during a start-up sequence, and configuration data is held by the combinatorial logic as the configuration register powers down during a functional mode.

Abstract: Embodiments for selecting regions of memory are described. For example, in one embodiment a memory device having an array of memory cells includes an array selection block. The array selection block receives an input signal indicative of a region in the array of memory cells. The array selection block generates a selection signal to map the region to at least one physical location in the array of memory cells, based on the detection of the number of defects in that location.

Abstract: A semiconductor memory device may include a power line, an over driver, and/or an internal voltage driver. The power line may be connected to at least one sense amplifier. The at least one sense amplifier may be connected to a memory cell included in a memory block. The memory block may be included in one of a plurality of memory block units including one or more memory blocks. The over driver may be configured to apply an external voltage to the power line in a sensing period of the sense amplifier. The internal voltage driver may be configured to apply an internal voltage to the power line in an amplification period of the sense amplifier. The over driver may be configured to perform an over driving operation by each memory block unit.

Abstract: In a non-volatile memory (NVM) device having a controller and a non-volatile memory array controlled by the controller a voltage supervisor circuit monitors an output of a voltage supply powering the NVM device. The voltage supervisor circuit may be part of the NVM device or coupled to it. The voltage supervisor circuit is configured to assert a “low-voltage” signal responsive to detecting the output of the voltage supply powering the NVM device dropping below a predetermined value. The controller is configured to write data into the memory array while the “low-voltage” signal is deasserted and to suspend writing data while the “low-voltage” signal is asserted. In response to assertion of the “low-voltage” signal, the controller completes a write cycle/program operation, if pending, and prevents any additional write cycles/program operation(s) during assertion of the “low-voltage” signal.

Abstract: A semiconductor memory device reduces power consumption during a refresh operation. The semiconductor memory device comprises a voltage generator, a sensing controller, an output driver and a data transmitter. The voltage generator is configured to generate an internal power voltage, which is lower during a power saving mode than during a normal mode, for a peripheral area. The sensing controller is configured to generate a control signal corresponding to a level of the internal power voltage. The output driver is configured to drive a transmitting data by using an output voltage. The data transmitter is configured to convert an inputting data into the transmitting data by using the internal power voltage or convert the inputting data into the transmitting data by using the output voltage in response to the control signal.

Abstract: A memory system is provided. The memory system includes a volatile memory having a number of banks, each bank having a number of rows, and a memory controller configured to direct the volatile memory to engage in an auto-refresh mode, the memory controller further configured to provide a target bank address to the volatile memory. The volatile memory is configured to perform an auto-refresh operation in the auto-refresh mode, the auto-refresh operation being performed on a target bank identified by the target bank address. Remaining banks in the plurality of banks other than the target bank are available for memory access while the auto-refresh operation is being performed on the target bank.

Abstract: A memory includes an input pad for receiving an input signal and a first circuit. The first circuit is configured to receive a first signal in response to the input signal and receive a second signal and provide a third signal in response to at least one of the first signal and the second signal indicating a request to enter a deep power down mode. The memory includes a second circuit configured to provide a fourth signal indicating an entry to the deep power down mode in response to the third signal.

Abstract: In a semiconductor memory having a plurality of word lines and bit lines and memory cells arranged at the positions of intersection thereof, a word driver circuit that drives the word line has a drive PMOS transistor and drive NMOS transistor which are connected in series between a first node and a second node and each of which has a gate connected to a third node, the word line being connected to a connection node of the two transistors. A first voltage or a second voltage lower than the first voltage is then applied to the third node, and the first voltage or second voltage is applied to the first node. In addition, between the third node and the gate of the drive PMOS transistor, there is provided a leakage prevention NMOS transistor having a gate applied with the first voltage or a voltage in the vicinity thereof.

Abstract: A power control circuit for an integrated circuit module includes at least one switch device coupled between a supply voltage and a power node of the integrated circuit module; and a switch control module having a first terminal coupled to the switch device, a second terminal coupled to a control signal, a third terminal coupled to a first storage node of at least one tracking cell, a fourth terminal coupled to a second storage node of the tracking cell, and a fifth terminal coupled to the power node of the integrated circuit module, for controlling the switch device to pass the supply voltage to the power node with or without a substantial voltage drop depending on an operation mode of the integrated circuit module.

Abstract: A method of configuring a device having programmable logic is disclosed. The method comprises storing instructions in the device; selecting between one of the instructions stored in the device and an instruction coupled to an input/output port of the device; coupling the instruction to a non-volatile memory; and reading a configuration bitstream from the non-volatile memory based upon the selected instruction. A method of enabling a multi-boot configuration of a device having programmable logic is disclosed. The method comprises powering up the device using a first configuration bitstream from a first type of configuration device in response to a first command; receiving a reboot command; and reconfiguring the device using a second configuration bitstream from a second type of configuration device in response to a second command which is different than the first command. Circuits enabling a multi-boot configuration of a device having programmable logic are also disclosed.

Abstract: Static random access memory (SRAM) cells and methods of operation are provided which may be used to provide improved writeability and stability to support low voltage operation of memory devices. For example, in one implementation, by temporarily interrupting the connection between portions of an SRAM cell and a power source such as a reference voltage or current source, the writeability of SRAM cells can be improved. Additional read port implementations are also provided to facilitate low voltage operation. In another implementation, a power switch circuit responsive to a word line and logic signals may be used to provide such interruptions.

Abstract: In a semiconductor device equipped with a nonvolatile memory, using a simple configuration, a write operation and the like are reliably made feasible even when stability of power supply from an external component is inhibited. The semiconductor device includes a nonvolatile memory core including a nonvolatile memory and a switch for switching a power supply mode for supplying power to the nonvolatile memory core between a first mode in which power is supplied from an external power supply and a second mode in which power is supplied from an accumulation device used as a back-up power supply. The nonvolatile memory core outputs a status signal indicating an operation state of the nonvolatile memory core, and the switch switches the power supply mode according to an operation state of the nonvolatile memory core that the status signal indicates.

Abstract: Voltage coupling/decoupling devices are provided within DRAM devices for improving the bias sensing of sense amplifiers and thus the refresh performance. The voltage coupling/decoupling devices couple or decouple bias voltage from corresponding digit lines coupled to the sense amplifiers. By coupling and decoupling voltage from the digit lines, the time interval between refresh operations can be increased.

Abstract: Provided is an internal voltage generation circuit for generating an internal voltage used in a semiconductor device. The internal voltage generation circuit includes a standby internal voltage generator which is driven during a standby operation and an active operation and supplies a voltage to a core voltage end, a first active internal voltage generator for supplying a voltage to the core voltage end in response to an active signal activated during the active operation, and a second active internal voltage generator which is driven only for a predetermined time period in response to the active signal, and supplies a voltage to the core voltage end.

Abstract: A programmable logic device (PLD) such as a field programmable gate array (FPGA) has a power-down mode of operation that reduces power consumption during standby or idle periods for the PLD. In one embodiment, the PLD includes a switch such as an internal power supply operable to provide power to the logic core of the PLD, such as the programmable logic blocks, routing structure, and volatile configuration memory. The internal power supply powers down the logic core in response to assertion of a power-down signal, while power is maintained to other circuitry of the PLD.

Abstract: A leakage current cut-off device for a ternary content addressable memory is provided. The storage cell of a ternary content addressable memory may be in the active mode, data-retention mode and cut-off mode. This invention applies a multi-mode data retention power gating device to the storage cell of the ternary content addressable memory to reduce the leakage current through the storage cell in the data-retention mode and the cut-off mode, and support the full speed operation in the active mode.

Abstract: A resistive memory device requires a power supply having a reduced number of voltage taps and reduced power consumption. In accordance with one exemplary embodiment, one or more voltages used by a reference circuit which are normally supplied by different taps of a power supply are generated by corresponding power circuits. In accordance with a second exemplary embodiment, the power circuits are coupled to the bit lines and replace the reference circuit in a manner to improve sensing margin.

Abstract: An energy efficient storage device using per-element selectable power supply voltages provides energy conservation in storage devices while maintaining a particular performance level. The storage device is partitioned into multiple elements, which may be sub-arrays, rows, columns or individual storage cells. Each element has a corresponding virtual power supply rail that is provided with a selectable power supply voltage. The power supply voltage provided to the virtual power supply rail for an element is set to the minimum power supply voltage unless a higher power supply voltage is required for the element to meet performance requirements. A control cell may be provided within each element that provides a control signal that selects the power supply voltage supplied to the corresponding virtual power supply rail. The state of the cell may be set via a fuse or mask, or values may be loaded into the control cells at initialization of the storage device.

Abstract: A method adapts circuit components of a memory module to changing operating conditions within a predefined range. According to one embodiment, a memory module provides a sensor arrangement and a communication bus. Sub-ranges are defined for at least one operating condition, in which the circuit components can work with a fixed setup. During operation, the current state of the at least one operating condition is sensed using the sensing arrangement. The sensed state of the operating condition is mapped to one of the predefined ranges and an associated set of control signals is transmitted over the communication bus. The control signals transmitted over the communication bus are used to adapt at least one circuit component to the current operating conditions.

Abstract: A self-contained backup power source such as a battery is provided for components within an electrically powered device such as a storage controller, photocopier or the like, to maintain diagnostic status data and to power a service indicator aid, or diagnostic indicator, such as an LED. A switch selects the backup power source when a primary power source of the electrically powered device is no longer available to the component, such as when the component is removed from the electrically powered device, the primary power source is disconnected as a safety precaution when servicing or replacing the component, or a higher-level assembly, in which the component is provided, is removed from the electrically powered device. The diagnostic indicator may be powered separately from the data storage device.

Abstract: A device for protecting data stored in a static random access memory (SRAM) is provided. More particularly, a device for protecting SRAM data including an SRAM data erasing circuit, which erases memory stored in an SRAM at once when illegal separation from a system is detected. The device for protecting SRAM data includes: a power switching circuit for outputting electrical power supplied from an external power supply or a back-up battery power supply depending on whether the external power supply is supplying the electrical power or not; and an SRAM data erasing circuit for supplying the electrical power output from the power switching circuit to a power input terminal of a SRAM or grounding the power input terminal of the SRAM, in response to a connecter connection signal. The device can prevent illegal leakage of SRAM data by erasing the data stored in the SRAM when the SRAM is illegally separated from a system according to the switch setting of the SRAM data erasing circuit.