Abstract: A structure including volatile memory devices that are used by the host computer system as the storage media. The volatile memory devices include volatile memory device back up systems to provide power to both the volatile memory and non-volatile memory in the event of power failure. The volatile memory devices also connect directly to an expansion bus of the host computer system, such as a PCI bus. Therefore, the volatile memory devices of the invention include a high-speed path to the host computer system and the volatile memory devices of the invention are faster than prior art devices, use less power and are lower cost.

Abstract: A power supply potential GNDP as a substrate potential of two N-channel MOS transistors constructing an SRAM transistor memory cell is enabled to be controlled independent of a ground potential GNDM as a source potential of the N-channel MOS transistors. In the case where a standby current failure occurs, by weakening the driving ability of the N-channel MOS transistors by a substrate effect, the failure can be found in a functional test. A defective memory cell as a cause of the standby current failure, in which a small leak occurs can be specified and is replaced by a redundant memory cell, thereby enabling the yield to be improved.

Abstract: A semiconductor memory device includes a logic unit, a DRAM unit, and first and second PMOS transistors In a normal mode, the first PMOS transistor is off and the second PMOS transistors is on, whereby power supply voltage is supplied to all the circuits. In a power down mode, the first PMOS transistor is on and the second PMOS transistor is off, so that power is not supplied to circuitry that is not required for a self refresh operation. Power supply voltage is provided to circuitry that is required for a self refresh operation. Thus, current consumption during self refresh can be reduced.

Abstract: A power supply circuit generating a power supply voltage for refresh-related circuitry and a power supply circuit for column-related/peripheral control circuitry are controlled by a power supply control circuit to be put in different power supply voltage supplying states in a self refresh mode. In the self refresh mode, only self refresh-related circuitry receives a power supply voltage to perform refresh operation. A reduced current consumption can be achieved in the self refresh mode while fast access operation is not deteriorated.

Abstract: A semiconductor integrated circuit in which a logic and a memory are merged, includes a voltage generation unit for generating two or more internal power supply voltages based on two or more external power supply voltages supplied from outside the voltage generation unit with different timings and for furnishing the plurality of internal power supply voltages to the memory. The voltage generation unit includes a standby unit with a small current-feed ability that is always activated, for generating the plurality of internal power supply voltages, and an active unit with a large current-feed ability that is activated as needed, for generating the plurality of internal power supply voltages. An activation control unit prevents the active unit from being activated until all of the plurality of external power supply voltages rise.

Abstract: A memory device tester capable of testing for proper operation of reduced power states in memory devices. The memory device tester can include a processor or a state machine, each configured to send commands to the memory device, and to compare results. An example of a memory device that can be tested by the memory device tester is a Direct Rambus Dynamic Random Access Memory (DRDRAM). The described processing systems and other circuits can test a DRDRAM for proper operation in a standby (STBY) state. When the DRDRAM is in STBY, the column decoder is shut off to conserve power, and the DRDRAM should not respond to column packets on the column control bus. The DRDRAM Specification suggests that the DRDRAM be put in the STBY state with no banks active. The method and apparatus provide for testing that the column decoder is shut off when in STBY with no banks active, which is the recommended usage pattern for the part.

Abstract: A logic portion outputs to a DRAM portion a start address and an end address indicating a memory region where data to be stored is present prior to transition to power down mode having reduced current consumption. In the power down mode, a refresh control unit holds the start address and the end address and controls refresh to be carried out for data only in a region requiring refresh. The power supply of the logic portion is set in off state in the power down mode and accordingly a semiconductor device can consume reduced current while holding data.

Abstract: A current limiter includes: a P type MOS transistor electrically coupled between a main power potential supply line supplying power supply potential Vcc and a power potential supply line; and a level converter generating a control signal of signal levels in an operating state and a standby state, respectively, corresponding to a ground potential Vss and an intermediate potential Vhh (Vss<Vhh<Vcc) adjustable externally. The control signal is inputted into the gate of the transistor. The transistor supplies a sufficient operating current for ensuring an operating margin and a standby current of a prescribed value or less satisfying a requirement for lower power consumption onto the power potential supply line in the operating state and the standby state, respectively.

Abstract: A method is provided for reducing standby power in a memory array including a plurality of transistors. Each of the transistors includes a drain, a source and a gate. The method includes providing a memory array column (30) including a plurality of memory cells (10). Each memory cell (10) includes drive transistors (12). A current limiting transistor (34) is coupled to the drive transistors (12). A mode signal (38) is coupled to the current limiting transistor (34). The mode signal (38) is operable to deactivate the current limiting transistor (34). The current limiting transistor (34) is deactivated when the mode signal (38) indicates that the memory array column (30) is in a standby mode.

Abstract: A backup energy unit for an electrical device having a power source, an operational load, and containing a layered electrical device having a top exterior surface and a bottom exterior surface, such as an integrated chip or layered circuit board. The energy unit is made up of at least one energy storage device. This energy storage device is made up of a dielectric material and a first and a second electrical storage conducting layer. The dielectric material lies between the first and second electrical storage conducting layers. Further, the dielectric material exists between the top exterior surface and bottom exterior surface of the layered electrical device. The energy unit is further made up of a voltage detector to detect a potential level of the power source. When the voltage detector detects a power source disruption, that is when the potential level of the power source is below a first voltage state, it controls a switcher.

Abstract: A semiconductor integrated circuit so configured to stop the supplying of an electric power to a logic circuit in a standby mode, thereby to realize a low power consumption, includes a latch circuit characterized in that as the control signal a clock signal is supplied in the active mode, and a signal for creating an information hold condition is supplied in the standby mode, and in that MOSFETs applied with a control signal include a first conductivity type MOSFET having a high threshold and a second conductivity type MOSFET having a low threshold, a voltage amplitude of the control signal being larger than a power supply voltage. The semiconductor integrated circuit can be realized in that the high speed operation in the active mode and the low power consumption in the standby mode are compatible with each other, and it is sufficient if a power switch for the logic circuit is inserted at only either of the high level power supply voltage line side and the low level power supply voltage line side.

Abstract: A circuit for power-off state storage in an electronic device having a positive power supply includes a storage circuit comprising first and second storage capacitors and a write circuit having a plurality of N-type transistors coupled to the storage circuit. The write circuit is operable to write a data bit to the first and second storage capacitors. The power-off state storage circuit also has a sense amplifier connected to the storage circuit and that is operable to read the data bit stored by the storage capacitors. The first and second capacitors in the storage circuit are electrically isolated from the positive power supply such that when the positive power supply is terminated any charge stored on the first and second capacitors is prevented from discharging to the terminated power supply.

Abstract: To provide a semiconductor register element being capable of reducing standby power consumption of a CMOS semiconductor integrated circuit. Upon shifting from a standby status to an operating status, firstly the application of input voltage is interrupted from elements other than temporary memory elements to the temporary memory elements. Next, the application of output voltage is interrupted from the temporary memory elements to the elements other than the temporary memory elements. Finally, the supply of source voltage is interrupted to the elements other than the temporary memory elements. In the steps of returning from a standby status to an operating status, firstly the supply of source voltage is resumed to the interrupted elements other than the temporary memory elements. Next, the application of output voltage is resumed from the temporary memory elements to the elements other than the temporary memory elements.

Abstract: A system and method for considerable reduction of power consumption in memory circuits implementing Vbb (array body bias) and Vwl (negative word line) voltage generators. The system comprises switching off the negative WL generator during sleep or standby mode, so that no power is consumed. A relaxed refresh operation is carried out and the negative WL is powered by the Vbb generator. The noise coupled to the negative WL supply from BL swing is reduced due to the joint Vbb-Vwl decoupling scheme. In the active mode, the Vbb and Vneg are separated to avoid any cross-over noise and to maintain design flexibility. During power-on period, the ramp-up rate of Vbb level is improved by the Vwl generator.

Abstract: A variable impedance power supply line and a variable impedance ground line supplying voltages VCL1 and VSL1, respectively, are set to a low impedance state in a stand-by cycle and in a row related signal set period, and to a high impedance state in a column circuitry valid time period. Variable impedance power supply line and variable impedance ground line supplying voltages VCL2 and VSL2, respectively, are set to a high impedance state in the stand-by cycle, and low impedance state in the active cycle and in the row related signal reset time period. Inverters operate as operating power supply voltage of voltages VCL1 and VSL2 or voltages VCL2 and VSL1, in accordance with a logic level of an output signal in the stand-by cycle and in the active cycle. Thus a semiconductor memory device is provided in which subthreshold current in the stand-by cycle and active DC current in the active cycle can be reduced.

Abstract: The present invention relates to a semiconductor storage device in which data retention current consumption can be reduced. This device comprises memory cells, an internal power supply circuit for supplying an internal voltage HVC to the memory cells, transistors for halting the internal power supply circuit, and a switch circuit (transistors) for selectively supplying one of the internal voltage HVC or an externally supplied voltage HVC_EXT to the memory cells. When the memory cells are in a stand-by state (SLEEP=1) and are not engaged in a refresh operation, the internal power supply circuit is halted, and the externally supplied voltage HVC_EXT is supplied to the memory cells.

Abstract: A semiconductor memory device receives an external control signal repeatedly generated independently of an access to the memory device. The memory device includes an internal voltage generator for generating a desired internal voltage in response to the control signal. The internal voltage generator includes a charge pump circuit responsive to the control signal. The internal voltage may provide a negative voltage such as a substrate bias voltage, or may be a positive voltage boosted over an operating power supply voltage and used as a boosted word line drive signal. This scheme eliminates an oscillator for generating a repeated clock signal to the charge pump circuit, leading to reduced current consumption and reduced chip area for the semiconductor memory device.

Abstract: PORTABLE INFORMATION CAPTURE DEVICES A portable information record capture device having: an information record capturer; a device memory adapted to have a library of stored information records; a controller adapted to evaluate the space available in the device memory and if the available space is insufficient, to accommodate a new information record to compress one of: either the new information record; or one or more of the pre-existing stored information records in the device memory to a size where there is freed-up enough device memory to accommodate the new information record, or its compressed form if the controller requires it to be compressed, the controller being adapted to record a new information record, or its compressed form if it is to be compressed, to the freed-up device memory.

Abstract: An add-on card is provided for use within a computer system that has an expansion slot connected to a bus. The bus has a first supply line for supplying a first predetermined voltage and a second supply line for supplying a second predetermined voltage which is higher than the first predetermined voltage. The add-on card is adapted to operate properly regardless of whether the respective predetermined voltages are supplied on (1) the first supply line only, (2) the second supply line only, or (3) both supply lines. In a PCI bus implementation, where 3.3V and 5V are the predetermined voltage levels, the add-on card operates properly regardless of whether: only a 5V level is provided, only a 3.3V level is provided, or both 3.3V and 5V levels are provided.

Abstract: A system and method for providing battery back-up of SDRAM data upon power failure in which a power-down event is detected early and system hardware configures SDRAM self-refresh circuitry to set the SDRAM to a self refresh mode in which the SDRAM issues a single-refresh command just before system power drops below a safe threshold level and keeps the SDRAM in self-refresh mode after the system power drops by holding low a SDRAM clock enable signal using battery power. One embodiment for use with an external SDRAM controller includes a self-refresh control module (SRCM) and a battery backup module (BBUM). The BBUM includes power-down detection hardware and a battery for backing-up the SDRAM. In response to signals from the external SDRAM controller and the BBUM the self-refresh module generates SDRAM control signals for transitioning the SDRAM smoothly from normal mode to self-refresh mode during power-down events and vice-versa.

Abstract: A SRAM including an array of memory cell lines and columns, each column being supplied between a high supply voltage and a low supply voltage, which includes at least one MOS transistor in series with each column, and circuitry for applying to the at least one MOS transistor a turn-off control signal to enter a stand-by mode, whereby the overall resistance of the column and of the at least one transistor increases in stand-by mode.

Abstract: An architecture for registers and/or memory may provide a selectively disable payload portion. The architecture induced energy conservation. The architecture may include two or more payload portions for storage of payload data and a portion for storage of administrative data. Based on the contacts of the administrative data, certain payload portions may be enabled or disabled.

Abstract: To provide a semiconductor register element being capable of reducing standby power consumption of a CMOS semiconductor integrated circuit. Upon shifting from a standby status to an operating status, firstly the application of input voltage is interrupted from elements other than temporary memory elements to the temporary memory elements. Next, the application of output voltage is interrupted from the temporary memory elements to the elements other than the temporary memory elements. Finally, the supply of source voltage is interrupted to the elements other than the temporary memory elements. In the steps of returning from a standby status to an operating status, firstly the supply of source voltage is resumed to the interrupted elements other than the temporary memory elements. Next, the application of output voltage is resumed from the temporary memory elements to the elements other than the temporary memory elements.

Abstract: The semiconductor memory device includes a power supply voltage (Vcc) applied to the semiconductor device, a row controller for generating an output signal in response to a control signal representing one of a normal operation state and a stand-by state, and a plurality of row decoders connected between the row controller and a plurality of word lines. Each row decoder activates a corresponding word line in response to the output signal from the row controller and a row address signal from an external source, and the output signal of the row controller is a high voltage or a ground voltage when the plurality of row decoders are in a normal operation state or in a stand-by state, respectively. The semiconductor memory device also includes a column controller for generating an output signal in response to a first control signal representing one of a normal operation state and a stand-by state and a plurality of column decoders connected between the column controller and a plurality of column selection lines.

Abstract: According to one embodiment, an integrated circuit is disclosed that includes a first input/output (I/O) circuit and a leakage detection circuit coupled to the first I/O circuit. In a test mode of operation, the leakage detection circuit tests the first I/O circuit for excessive leakage current. According to another embodiment, the integrated circuit also includes a first resistor coupled between a line voltage and the first I/O circuit and a second resistor coupled between the first I/O circuit and ground. Further, the integrated circuit includes a second I/O circuit coupled to the leakage detection circuit and the first and second resistors. The leakage circuit also tests the second I/O circuit for excessive leakage current in the test mode of operation.

Abstract: The semiconductor device of this invention includes: an array section including a plurality of circuit blocks; a leakage current cutoff section for cutting off a leakage current occurring in at least one of the plurality of circuit blocks in the array section; and a control section for controlling the leakage current cutoff section in accordance with leakage current cutoff information.

Abstract: A variable impedance power supply line and a variable impedance ground line supplying voltages VCL1 and VSL1, respectively, are set to a low impedance state in a stand-by cycle and in a row related signal set period, and to a high impedance state in a column circuitry valid time period. Variable impedance power supply line and variable impedance ground line supplying voltages VCL2 and VSL2, respectively, are set to a high impedance state in the stand-by cycle, and low impedance state in the active cycle and in the row related signal reset time period. Inverters operate as operating power supply voltage of voltages VCL1 and VSL2 or voltages VCL2 and VSL1, in accordance with a logic level of an output signal in the stand-by cycle and in the active cycle. Thus a semiconductor memory device is provided in which subthreshold current in the stand-by cycle and active DC current in the active cycle can be reduced.

Abstract: A memory system for use in a computer system, includes a plurality of volatile solid state memory devices that retain information when an electrical power source is applied to the memory devices within a predetermined voltage range, and are capable of being placed in a self refresh mode. The memory devices have respective address and control lines, and a control device for selectively electrically isolating the memory devices from respective address lines and respective control lines so that when the memory devices are electrically isolated, any signals received on the respective address lines and respective control lines do not reach the memory devices.

Abstract: An electronic device that includes: a peripheral circuit which is driven by a drive voltage, a battery which supplies the drive voltage, a memory which is driven by the battery, and a CPU operable to write data to the memory, read the data which has been written, compare the written data with the read data, and determine whether or not the drive voltage has dropped below a minimum operable voltage based on the comparison.

Abstract: A semiconductor integrated circuit device according to the present invention includes a booster circuit 1 for raising an external power supply voltage Vccext, a level detecting circuit 2 for detecting fluctuation in a stepped-up voltage Vccint2, an internal voltage generating circuit 3 for generating an internal voltage Vccint on the basis of the stepped-up voltage Vccint2, an address buffer 4, an address decoder 5, and a memory cell array 6 of an EEPROM structure. The level detecting circuit 2 includes a first level detecting part for performing level detection during a memory access state, and a second level detecting part for performing level detection during a stand-by state. During the stand-by state, the internal voltage generating circuit 3 short-circuits the stepped-up voltage Vccint2 and the internal voltage Vccint.

Abstract: A semiconductor storage device, which has an automatic write/erase function, and uses a potential obtained by boosting a power supply voltage upon write/erase, has a write division control circuit which shifts the selection timings of bit lines upon write, so as to decrease the number of bits to be written simultaneously, thereby reducing the consumption current and compensating for insufficient current supply performance of a power supply circuit in case the power supply voltage is low, and refers to the contents of erase flags upon pre-programming in erase, and erase only blocks that require erases, while, when the power supply voltage is high as the power supply voltage has a wide range or the write time is short as in an acceleration test, the number of bits to be selected at the same time is increased to prevent an increase in write/erase time.

Abstract: A storage circuit apparatus includes a support material, a semiconductor chip on which at least one shadow RAM is integrated, a capacitor element and a circuit housing. The storage circuit shadow RAM apparatus is able to perform a STORE operation to secure the RAM content in the non-volatile shadow memory practically independently of the time curve in “power down,” without external accessory circuitry. The capacitor element, consisting at least of electrodes and dielectric, is integrated in the circuit housing, and furnishes the energy required for the STORE operation in power-down.

Abstract: A method is disclosed for alerting a user of a low power condition on, for instance, an FPGA interface device. An interface device having a microcontroller and an associated power plane for powering the microcontroller and other component on the interface device includes a detection circuit coupled to monitor the voltage level of the associated power plane. When the voltage level of the voltage plane falls below a predetermined threshold voltage, the detection circuit sends a low power flag to a host system. The low power flag, which is preferably sent to the host system using a USB port connection, alerts the host system of the low power condition on the interface device. The predetermined threshold voltage is selected to be a suitable amount higher than the minimum operating voltage for the microcontroller so as to allow sufficient time for the microcontroller to send the low power flag to the host system.

Abstract: A scheme for reduction of extra standby current induced by process defects is disclosed. After the bit lines and cells with failure due to process defects are repaired by using redundancy in the repairing process, the fuses connected with the pull-transistors coupled to the defect bit lines are disconnected, therefore cutting the leakage current completely. The standby leakage current can be reduced such that the SRAM can pass the standby current test and the yield is improved.

Abstract: A semiconductor memory device includes a logic unit, a DRAM unit, and first and second PMOS transistors. In a normal mode, the first PMOS transistor is off and the second PMOS transistor is on, whereby power supply voltage is supplied to all the circuits. In a power down mode, the first PMOS transistor is on and the second PMOS transistor is off, so that power is not supplied to circuitry that is not required for a self refresh operation. Power supply voltage is provided to circuitry that is required for a self refresh operation. Thus, current consumption during self refresh can be reduced.

Abstract: An electronic system, comprising a digital processor and an EEPROM, has circuit logic and program software or firmware for determining if a programming voltage level is sufficient for reliably programming the EEPROM. A charge pump is enabled and generates a voltage used for programming of the EEPROM. The enabled charge pump thereby loads a battery power supply. In addition, a test load may be connected to the output of the charge pump to simulate the EEPROM load during a programming operation to the EEPROM. The charge pump output voltage is measured to determine if at least a desired voltage value is obtained. Once the charge pump voltage level has been pre-qualified for the desired voltage value, an actual programming operation to the EEPROM may be performed. If the voltage level does not reach the desired value then a programming operation is inhibited and the electronic system may alarm or shut down operation.

Abstract: In one embodiment, the present invention relates to a particular configuration of a non-volatile counter, which significantly reduces the amount of area required for implementation in an integrated circuit and improves its reliability of operation. This is accomplished by (1) replacing the volatile binary counter with a volatile counter coded for more equal distribution the changes in logic state over the entire counter, (2) replacing the non-volatile latch circuit with a single non-volatile memory element, and (3) developing testing techniques for complete and efficient testing of the critical non-volatile memory elements.

Abstract: This invention concerns power consumption control of memory having a fully powered state and at least one lower power state. The invention changes the memory to the fully powered state upon receipt of a memory access request. This memory access request is serviced in the fully powered state. The memory is returned to a lower power state after expiration of a grace period following a last memory access request. This grace period can be measured by a predetermined time or a predetermined number of memory access requests or a combination of these factors. The predetermined time may be fixed in manufacture or programmable in operation via a control register or data stored in a predetermined set of address locations within the address space of the memory. This invention is useful in portable electronic devices such as wireless telephones.

Abstract: An equalization and precharge circuit precharges and equalizes local input/output (LIO) signal lines between each memory access operation within a memory circuit. The equalization and precharge circuit includes a local voltage circuit which maintains the level of the LIO signal lines at a standby voltage level during standby periods. Preferably, the standby voltage level is approximately equal to half of the supply voltage VCC. Separate precharge and equalization circuits are included to precharge and equalize the LIO signal lines between memory access operations. During precharge periods, a precharge control signal LIOPC is preferably at a logical high voltage level for a predetermined period of time between memory access operations, thereby forming a fixed-width pulse and raising the LIO signals to a known precharge level. The LIO signal lines are charged to a known level equal to the standby voltage level plus a voltage V(t) during the precharge and equalization period.

Abstract: A backup energy unit for an electrical device having a power source, an operational load, and containing a layered electrical device having a top exterior surface and a bottom exterior surface, such as an integrated chip or layered circuit board. The energy unit is made up of at least one energy storage device. This energy storage device is made up of a dielectric material and a first and a second electrical storage conducting layer. The dielectric material lies between the first and second electrical storage conducting layers. Further, the dielectric material exists between the top exterior surface and bottom exterior surface of the layered electrical device. The energy unit is further made up of a voltage detector to detect a potential level of the power source. When the voltage detector detects a power source disruption, that is when the potential level of the power source is below a first voltage state, it controls a switcher.

Abstract: A computer system comprising an input/output device, a processor, a memory device, and a bridge logic device for interfacing the memory device to the processor and input/output device incorporates a refresh logic device for generating a memory refresh signal during suspend mode. Because the rate at which memory must be refreshed generally depends on the temperature of the memory device, the refresh logic varies the frequency of the refresh signal according to the temperature of the memory device, resulting in substantial power savings. In a preferred embodiment, the refresh logic uses a normal-rate refresh signal at the beginning of suspend mode and incrementally steps down the refresh rate as the memory temperature decreases. In other embodiments, the refresh logic incorporates a signal generator which produces a refresh signal at a frequency that varies according the output voltage from a temperature sensor or the temperature-sensitive resistance of a thermistor.

Abstract: A variable impedance power supply line and a variable impedance ground line supplying voltages VCL1 and VSL1, respectively, are set to a low impedance state in a stand-by cycle and in a row related signal set period, and to a high impedance state in a column circuitry valid time period. Variable impedance power supply line and variable impedance ground line supplying voltages VCL2 and VSL2, respectively, are set to a high impedance state in the stand-by cycle, and low impedance state in the active cycle and in the row related signal reset time period. Inverters operate as operating power supply voltage of voltages VCL1 and VSL2 or voltages VCL2 and VSL1, in accordance with a logic level of an output signal in the stand-by cycle and in the active cycle. Thus a semiconductor memory device is provided in which subthreshold current in the stand-by cycle and active DC current in the active cycle can be reduced.

Abstract: A power distribution unit that can detect system status includes: an optional line filter, a live power source for driving a I2C device, a power sensor which monitors system power status in connection with the I2C device through a I2C BUS, and a relay and on/off switch circuit which turns on/off system power in accordance with the I2C device through the I2C BUS.

Abstract: A memory device is described which includes a voltage regulator having a low power standby mode. A voltage regulator control circuit is described which places the voltage regulator in a high current mode when the outputs of the memory device are active. The regulator control circuit is operated in response to a combination of RAS*, CAS* and OE* signals.

Abstract: A cell structure for a low electric power static RAM is disclosed and includes a data retention voltage detector for detecting a data retention voltage, a cell load controller for controlling a cell voltage, a load resistor, an access NMOS transistor, and a drive NMOS transistor.

Abstract: A static memory cell, composed of cross-coupled MOS transistors having a relatively high threshold voltage, is equipped with MOS transistors for controlling the power supply line voltage of the memory cell. To permit the voltage difference between two data storage nodes in the inactivated memory cell to exceed the voltage difference between the two nodes when write data is applied from a data line pair DL and /DL to the two nodes in the activated memory cell, the power supply line voltage control transistors are turned on to apply a high voltage VCH to the power supply lines after the word line voltage is turned off. The data holding voltage in the memory cell can be activated to a high voltage independent of the data line voltage, and the data holding voltage can be dynamically set so that read and write operations can be performed at high speed with low power consumption.

Abstract: A technique allowing a terminal device located in a remote place to protect data existing on an information processing system and then control an electric source of the information processing system is provided. An information processing system according to the present invention includes a service processor for discriminating an order issued by a terminal device located in a remote place, an electric source control circuit for controlling connection or disconnection of an electric source in response to an electric source connection or disconnection order issued by the service processor, and an electric source unit for conducting connection or disconnection of an electric source in response to an electric source connection or disconnection order issued by the electric source control circuit.

Abstract: Integrated circuit memory devices monitor clock signal transitions and automatically induce a power saving standby mode of operation if the clock signal becomes inactive for a designated amount of time. The memory devices include at least one buffer having an active mode and an inactive standby mode and a standby current control circuit. This control circuit disposes the at least one buffer in its inactive standby mode whenever a power down signal is in a first logic state or whenever the power down signal is in a second logic state at a point in time when a clock signal has continuously been in an inactive state for a duration greater than twice its period. The control circuit may comprise a clock signal detector having N serially-connected latches therein which are reset whenever the clock signal transitions from the inactive state to an active state.

Abstract: Circuitry 400 remotely controls the power in a computing system. An infrared receiver 401 receives a code transmitted from a remote device 206; Circuitry 402 generates a pulse in response to the code, the pulse emulating an output of a switch 205. A transistor 403 has a control terminal for receiving the pulse and outputting a control signal in response.

Abstract: An apparatus and method for switching between two power supplies, a primary power supply and a secondary power supply. The present invention generates a first reference voltage using the voltage of the primary power supply and the secondary power supply, wherein the primary power supply voltage is variable. The present invention also generates a second reference voltage based on the voltage of the primary power supply. The first and second reference voltages each have a different slope and the crossing point between these two reference voltages indicate that a switch between the primary power supply and the secondary power supply should occur.