Abstract: This invention provides a new standby mode circuit design which reduces the power dissipation of static random access memory, SRAM circuitry. The circuit and method of this invention provides a reduced power supply voltage to SRAM memory cells so as to reduce the power dissipation of memory cells, while utilizing the full power supply voltage for the SRAM bit line and peripheral circuitry so as to preserve memory access performance.

Abstract: A semiconductor memory device includes an SRAM provided on a chip, the SRAM including an SRAM cell array. A DRAM is provided on the chip, the DRAM including a DRAM cell array. An address input circuit receives an address signal, the address signal having a first portion and a second portion, the first portion carrying a unique value of row-column address information provided to access one of memory locations in one of the SRAM and DRAM cell arrays, the second portion carrying a unique value of SRAM/DRAM address information provided to select one of the SRAM and the DRAM.

Abstract: A power-up control circuit has three components including a normal power-supply voltage level detection section, a special command section for detecting a deep-sleep enable input signal, and an output driver section that logically combines the output signal of the normal power-supply voltage level detection section and the special command detecting section to provide an improved, combined power-up control signal CPWRUP. The combined power-up control signal CPWRUP signal is temporarily brought to a LOW state for a predetermined period of time immediately after the end of a power-saving mode of operation, such as a deep-sleep mode of operation for a memory device. The LOW state of the combined power-up control signal CPWRUP output signal allows all internal circuitry to be returned to their initial states that are the same as those obtained after a normal power-up sequence, even though the external voltage level stays at its normal level.

Abstract: According to one embodiment of the invention, a memory circuit operable to assume a standby mode is provided. A memory circuit includes a transistor comprising a gate and a bulk. The bulk is at a retention voltage level. The memory circuit also includes a first node and a second node that are coupled to each other by the transistor. The first node is operable to assume a higher voltage level than the second node in response to an initiation of the standby mode. The memory circuit also includes a third node coupled to the gate of the transistor. The third node is operable to assume a voltage approximately equal to the retention voltage in response to an initiation of the standby mode. The transistor is operable to reduce any direct current flow between the first node and the second node in response to a rise in voltage at the third node to a voltage approximately equal to the retention voltage.

Abstract: A nonvolatile semiconductor memory unit which is provided with a nonvolatile semiconductor memory and a controller for performing a read operation, a write operation and an erase operation on the nonvolatile semiconductor memory unit, including an external power source which derives its supply of electric power from outside, an internal power source which derives its supply of electric power from a secondary battery and is connected to the nonvolatile semiconductor memory and the controller, a voltage detecting circuit for detecting a voltage of the external power source and a switching circuit which is provided between the external power source and the internal power source and is subjected to on-off control by an output of the voltage detecting circuit so as to enable and disable the external power source, respectively.

Abstract: A power control unit activates a control signal ST for a circuit block to be set to a standby state before turning off power of the circuit block or a whole chip, and saves an operation result of data processing of the circuit block into a memory unit. When the power is again supplied to the circuit block in the standby state, the power control unit activates a control signal RES after the power supply is started and restores the data saved in the memory unit to the circuit block. Flip-flops in the circuit block are connected in series when the saving or restoring of data is performed, and perform a data transfer operation with a path different from that in a normal operation. Therefore, a semiconductor device can be provided which can rapidly transit to a standby mode having reduced current consumption while holding internal information.

Abstract: The semiconductor storage unit comprises a clock first-stage circuits into which clock signals CLK and CLKB are entered; an output circuit which outputs data stored in the memory cell by a BDD signal BDDO generated in synchronization with the external clock signals and generated by external input signals; a delay adjusting circuit which corrects an output phase shift between the clock signal CLK and data caused by a delay between the CLK first-stage circuits and the output circuit by delaying the BDD signal BDDO, and comprises replica circuits synchronizing between the clock signal CLK and data and delay circuits; and a control circuit which controls operation and stoppage of these delay circuits individually.

Abstract: A memory and system reduce power consumption by reducing a power supply level. The memory includes input circuitry coupled to a data communication bus. The input circuitry has first and second threshold detection levels to detect voltage transitions of data signals communicated on the bus. The memory device changes threshold voltage detection levels in synchronization with other memories coupled to the bus. In one embodiment, the synchronization is performed while the memory devices are in a power down state. A power supply provided to the memory device is changed while the memory is in the power-down state.

Abstract: A back up power embodied non-volatile memory device including a connection port, a power supply unit and a memory system. A host machine provides data and power to the connection port through an external bus. The memory system holds the data received from the connection port temporarily and transfers the data to a non-volatile memory unit inside the memory system. The power supply unit provides necessary power to complete the transfer of temporarily stored data inside the memory system to the non-volatile memory unit to become readable data when host power suddenly fails.

Abstract: The invention achieves a high speed access when shifting to an active mode from a standby mode, in particular immediately after shifting to a read, and reduces the current consumption at the time of standby. A strong charge pump generates 5.0V and a power supply voltage of 8.0V. The power supply voltage is supplied to constant voltage circuits. The constant voltage circuits generate voltages VPBL, VPYS, VPCGL, VPCGL, VPCGH and VPCGH, respectively, according to the respective read, program and erase operation modes. The constant voltage circuit that operates in active modes consumes a large amount of current when it supplies the voltage VPCGH. In contrast, the constant voltage circuit operates with a low current consumption and generates the voltage VPCGH in the standby mode.

Abstract: A semiconductor integrated circuit comprises an internal potential generation circuit for a memory, a current flow pass interruption circuit connected to the internal potential generation circuit, and an input terminal, connected to the current flow pass interruption circuit, for providing a stand-by setting signal controlling the current flow pass interruption circuit, wherein a potential is supplied to the internal potential generation circuit during the operation of the memory, and it is interrupted during the stand-by of the memory to supply the potential to the internal potential generation circuit.

Abstract: A semiconductor memory device including a delay locked loop (DLL) that is capable of turning off the DLL in a precharge mode while maintaining locking information stored before the DLL operates in the precharge mode is provided. The DLL includes an ON/OFF mode for turning the DLL on or off. The DLL also includes a standby mode for turning the DLL off while still maintaining locking information stored before the DLL operates in a precharge mode in response to the activation of a standby enabling signal. The standby enabling signal is inactive when the DLL locks. The standby enabling signal is active when DLL lock is complete.

Abstract: A method is provided for reducing standby power in a memory array including a plurality of transistors. Each of the transistors includes a drain, a source and a gate. The method includes providing a memory array column (30) including a plurality of memory cells (10). Each memory cell (10) includes drive transistors (12). A current limiting transistor (34) is coupled to the drive transistors (12). A mode signal (38) is coupled to the current limiting transistor (34). The mode signal (38) is operable to deactivate the current limiting transistor (34). The current limiting transistor (34) is deactivated when the mode signal (38) indicates that the memory array column (30) is in a standby mode.

Abstract: The present invention discloses a standby current reduction circuit applied in DRAM, which comprises a pre-charge circuit and a current-limiting means. The pre-charge circuit provides a pre-charge current to the pair of complementary bit lines of DRAM only in the operating mode. The current-limiting means provides only a small pre-charge current to the pair of complementary bit lines of DRAM. With the pre-charge current provided by the pre-charge circuit, it can reduce the pre-charge current required by the current-limiting means to supply, and further reduce the leakage current forming in the standby mode due to short circuit between the pair of complementary bit lines and the word line of DRAM.

Abstract: In a semiconductor integrated circuit having a DRAM, a DWL driver circuit has a bias function unit (42, 43) for supplying, as a potential of a word line, a sub decode signal of an H level in an active state and an L level signal of a ground potential in a standby state, and switching the potential of the word line to a low potential for self refresh which is higher than the ground potential only by a very small value (+&agr;volts) in a self refresh mode. Thus, a refresh cycle is extended to thereby reduce a self refresh current.

Abstract: A circuit for reducing power in SRAMS and DRAMS is implemented by dynamically controlling a voltage applied to Nwells containing PFETs used in memory cells. When a memory cell is in standby, the voltage applied to Nwells containing PFETs is increased in order to reduce leakage current. When a memory cell is being written, read, or refreshed, the voltage applied to Nwells containing PFETs is reduced in order to allow the memory cell to switch more quickly.

Abstract: An apparatus and method dynamically controls the graphics and/or video memory power dynamically during idle periods of the memory interface during active system modes. In one embodiment, a memory request detector generates memory request indication data, such as data representing whether memory requests have been received within a predetermined time, based on detection of graphics and/or video memory requests during an active mode of the display system operation. A dynamic activity based memory power controller analyzes the memory request indication data and controls the power consumption of the graphics and/or video memory based on whether memory requests are detected.

Abstract: A system LSI including substrate-bias generation circuits for supplying substrate biases independent of each other to functional modules integrated in the system LSI, a substrate-bias control circuit for controlling the substrate-bias generation circuits and a substrate-bias control-value storage unit for storing control values to be supplied to the substrate-bias generation circuits. The control values stored in the substrate-bias control-value storage unit are set by carrying out a predetermined operation. As a result, it is possible to provide a device for implementing both a high-speed operation and low power consumption without lowering the yield and for finely controlling the power consumption during the operation.

Abstract: The present invention discloses an internal power voltage generator of a semiconductor device which can actively control standby tape pumps and active tape pumps according to a magnitude of an internal power voltage.

Abstract: A back up power embodied non-volatile memory device comprising a connection port, a power supply unit and a memory system. A host machine provides data and power to the connection port through an external bus. The memory system holds the data received from the connection port temporarily and transfers the data to a non- volatile memory unit inside the memory system. The power supply unit provides necessary power to complete the transfer of temporarily stored data inside the memory system to the non-volatile memory unit to become readable data when host power suddenly fails.

Abstract: A structure including volatile memory devices that are used by the host computer system as the storage media. The volatile memory devices include volatile memory device back up systems to provide power to both the volatile memory and non-volatile memory in the event of power failure. The volatile memory devices also connect directly to an expansion bus of the host computer system, such as a PCI bus. Therefore, the volatile memory devices of the invention include a high-speed path to the host computer system and the volatile memory devices of the invention are faster than prior art devices, use less power and are lower cost.

Abstract: A static memory cell, composed of cross-coupled MOS transistors having a relatively high threshold voltage, is equipped with MOS transistors for controlling the power supply line voltage of the memory cell. To permit the voltage difference between two data storage nodes in the inactivated memory cell to exceed the voltage difference between the two nodes when write data is applied from a data line pair DL and /DL to the two nodes in the activated memory cell, the power supply line voltage control transistors are turned on to apply a high voltage VCH to the power supply lines after the word line voltage is turned off. The data holding voltage in the memory cell can be activated to a high voltage independent of the data line voltage, and the data holding voltage can be dynamically set so that read and write operations can be performed at high speed with low power consumption.

Abstract: The standby power consumption of storage or memory cells is improved by ramping the wordline voltage down at a rate slow enough to allow the addressed storage cell to reach a more stable voltage before reading. The voltage change applied to the wordline can be staged through a series of intermediate voltages.

Abstract: In a semiconductor memory device which has a plurality of operation modes and can reduce a consumed electric current by carrying out the switching control of an internal signal for every operation mode by required minimum control, a control method thereof, and a control method of a semiconductor device, there are provided an address switching circuit 13 for propagating either a refresh address ADD (Ref) from a refresh counter 14 at a time of a refresh mode or an external address ADD (R/W) at a time of data-input/output mode as internal address ADD (INT), a mode discriminating circuit 11 for discriminating between a refresh operation requesting signal REQ (Ref) and a data input/output requesting signal REQ (R/W) and for outputting a mode discriminating signal M, and a switch holding circuit 12 for outputting a switch change-over signal SW in accordance with the mode discriminating signal M, and the connection of the address switching circuit 13 is switched only at a time of a mode change.

Abstract: When a device is removed during recording, there is a possibility such that a fatal error may be caused in the device. Information for device control is read out from the device. When it is detected that a cover which covers the device is opened or that a power voltage is equal to or less than a predetermined value during the operation with a battery, a control unit invalidates the read-out control information for the device. Therefore, when the device is erroneously taken out during the recording or when a battery output drops during the recording, a fatal error is not caused in the device.

Abstract: In an arrangement for a security module that is plugged via an interface onto a base plate of a postal device, particularly a postage meter machine, the battery is replaceably arranged on the security module, and the voltage monitoring unit includes a circuit for a resettable self-holding, the self-holding being triggered when the battery voltage drops below a predetermined threshold. The status can be interrogated by a processor. The resetting of the self-holding can only be triggered when the battery voltage has risen above the predetermined threshold.

Abstract: According to one embodiment, a memory cell is disclosed. The memory cell includes a first PMOS transistor, a first NMOS transistor coupled to the first PMOS transistor, a second PMOS transistor and a second NMOS transistor coupled to the first PMOS transistor. The first and second PMOS transistors receiving a bias control signal.

Abstract: A non-volatile memory device with a built-in laser indicator. The non-volatile memory device includes a connective port, a buffer, a non-volatile memory unit, a memory controller, a battery and a laser indicator. The connective port connects electrically to a host machine. The host machine transfers data and provides power to the connective port through an external bus. The buffer holds the data transmitted to the connective port temporarily. The memory controller controls the transfer of data from the buffer into the non-volatile memory unit. The battery receives host power and stores up some host power to serve as backup power. The battery also provides the power for driving the laser indicator.

Abstract: Battery backed memory for use in an industrial controller allows software disconnect of the battery and memory so that unplanned power outages may receive the benefit of battery backup, but battery power is not unduly wasted during planned power outages when data loss may be accommodated or other provisions may be made for saving data in nonvolatile memory.

Abstract: A logic portion outputs to a DRAM portion a start address and an end address indicating a memory region where data to be stored is present prior to transition to power down mode having reduced current consumption. In the power down mode, a refresh control unit holds the start address and the end address and controls refresh to be carried out for data only in a region requiring refresh. The power supply of the logic portion is set in off state in the power down mode and accordingly a semiconductor device can consume reduced current while holding data.

Abstract: A storage circuit for an integrated circuit is configured to couple to a first power supply voltage (e.g. a Vdd power supply voltage used by other circuitry within the integrated circuit) in response to a deassertion of a hold signal and configured to couple to a second power supply in response to an assertion of the hold signal. The second power supply voltage may be the hold signal voltage or another power supply voltage separate from the Vdd power supply voltage. The hold signal may be asserted and the Vdd power supply voltage may be removed. Leakage current in circuits powered only by the Vdd power supply voltage may be eliminated, while the storage circuit may retain its stored value. A system including the integrated circuit and a method for managing power in the system.

Abstract: An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.

Abstract: An architecture for registers and/or memory may provide a selectively disable payload portion. The architecture induced energy conservation. The architecture may include two or more payload portions for storage of payload data and a portion for storage of administrative data. Based on the contacts of the administrative data, certain payload portions may be enabled or disabled.

Abstract: A dummy cell circuit, used in semiconductor memory capable of high-speed operation without inviting enlargement of the chip size even when using a paraelectric capacitor, includes at least one paraelectric capacitor and have a specific relation between potentials applied to its terminals. For example, in a standby mode, a first terminal of the paraelectric capacitor is precharged to a first potential higher than ground potential whereas a second terminal of the paraelectric capacitor is pre-charged to ground potential. In an active mode, the first terminal is connected to one of paired bit lines, which is a reference bit line to which data is not read-out from memory cell, and the second terminal is raised from ground potential to a second potential higher than ground potential.

Abstract: A semiconductor memory device is provided including a memory having memory cells and circuit blocks, a power switching circuit and a refresh control apparatus. In a first operation state, the refresh control apparatus supplies power to the memory using the power switching circuit to refresh the memory cells. In a second operation state, the refresh control apparatus turns off the power supply to at least one circuit block using the power switching circuit. Another operation state is also provided in which round transition between the first and second operation states is repeated multiple times. Accordingly, power consumption is reduced, especially for semiconductor memory devices that use memory elements in which a lengthy period is required for the refresh operation. As a result, it is possible to decrease the overall electric power of the semiconductor device.

Abstract: Clock generating circuits for a semiconductor memory device are provided. The clock generating circuits include a delay locked loop (DLL) circuit that generates an internal clock signal for the semiconductor memory device. A control circuit activates the delay locked loop circuit for a predetermined time when the semiconductor memory device transitions from a self refresh mode, in which the DLL circuit is deactivated, to a standby mode. The control circuit may also be configured to deactivate the DLL circuit when the semiconductor memory device transitions from a power down mode, in which the DLL circuit is activated, to the standby mode. The semiconductor memory device may be a dynamic random access memory device and the predetermined time may be a number of clock cycles of the internal clock signal. Methods for operating the same are also provided.

Abstract: A semiconductor memory device that decreases power consumption and increases performance. The semiconductor memory device includes a plurality of memory cells that undergo refreshing to maintain data. The semiconductor memory device includes a normal operation mode for performing normal operation with the memory cells, and a plurality of low power consumption modes for decreasing power consumption when the semiconductor memory device is in a standby state. The semiconductor memory device includes a mode setting circuit that sets one of the low power consumption modes.

Abstract: An integrated semiconductor memory has memory cells with a ferroelectric memory property. The memory cells are in each case connected between a column line and a charge line. The column line is connected to a read amplifier which supplies an output signal. The charge line is connected to a driver circuit which provides the charge line with a given potential. In an inactive mode, the column line and the charge line are jointly connected to a connection for a common supply potential in the read amplifier or in the driver circuit. As a result, a relatively quick equalization of a potential between the lines is possible. Thus, unintended changes in the memory cell content due to interfering voltages are avoided.

Abstract: A word line driver circuit for a semiconductor memory device. One or more transistors in the driver circuit are fabricated such that they are susceptible, under certain conditions, to gate-induced diode leakage (GIDL). One terminal of the transistors are coupled to a local supply node, which during standby conditions when the word line driver circuit is not driving a word line, is maintained at a voltage less than that of a global power supply node. In one embodiment, the local power supply node is coupled to the global power supply node by means of at least one decoupling transistor receiving a control signal at its gate and by a vt-connected transistor, such that the voltage on the local power supply node is maintained at a level not exceeding one transistor threshold voltage less than the global power supply node voltage when the decoupling transistor is off.

Abstract: A load circuit for coupling a bit line pair BLP in a memory cell array to a power supply potential makes a bit line once to a floating state when the mode shifts to a standby mode in accordance with a chip select signal /CS. The load circuit holds the potential of the bit line BL in a latch circuit and determines whether the bit line BL is coupled to the power supply potential or not in accordance with the held potential. Therefore, in the case where a small short circuit occurs between the bit line and the ground line, the bit line is disconnected from the power supply potential, thereby enabling the current in the standby mode to be reduced.

Abstract: A ferroelectric memory has a memory cell array having memory cells arrayed and each constructed of a ferroelectric capacitor and a transistor, a decode circuit configured to select the memory cells of the memory cell array; a sense amplifier circuit configured to detect and amplify data of a selected memory cell of the memory cell array selected by the decode circuit; and an access permission circuit configured to output an access permission signal for permitting an access to said memory cell array when a predetermined period elapses after switching ON a power source or after reaching a predetermined internal state.

Abstract: A zero power standby bias system controls the standby voltage levels of a current reference system used as a sense amplifier read reference in a non-volatile memory. The memory includes a non-volatile memory array having a plurality of memory cells coupled to bit lines. A plurality of sense amplifiers are coupled to the bit lines to determine the values stored in the memory cells in comparison to the reference signal provided by the reference system. The comparator circuit is not limited to a reference current, but can use reference voltages and a bit line voltage. The zero power standby bias system maintains a voltage level of the reference system to levels near those of operation while in standby mode, eliminating the need for the circuit to overcome large voltage differences and capacitance transitioning from low power or standby mode to active. The zero power standby bias system, therefore, eliminates overhead and speeds initial access times for non-volatile memory cells.

Abstract: A load circuit for coupling a bit line pair BLP in a memory cell array to a power supply potential makes a bit line once to a floating state when the mode shifts to a standby mode in accordance with a chip select signal /CS. The load circuit holds the potential of the bit line BL in a latch circuit and determines whether the bit line BL is coupled to the power supply potential or not in accordance with the held potential. Therefore, in the case where a small short circuit occurs between the bit line and the ground line, the bit line is disconnected from the power supply potential, thereby enabling the current in the standby mode to be reduced.

Abstract: A content addressable memory (CAM) includes a voltage power supply input and an enable input. An enable control circuit is connected to the enable input, and operates to compare an external voltage to an enable reference voltage. If the external voltage drops below the enable reference voltage, the enable control circuit drives the enable input to place the CAM into a low current, stand-by mode of operation. A voltage supply back-up circuit is connected to the voltage power supply input, and operates to compare the external voltage to a supply reference voltage. If the external voltage drops below the supply reference voltage, the voltage supply back-up circuit switches the voltage power supply input for the CAM from the external voltage input to a battery backup. As an alternative, the voltage power supply input for the CAM includes a separate power input for a CAM array, and the switch causes only that separate power input for the CAM array to be powered from the battery back-up.

Abstract: A voltage converter for supporting a suspension-to-RAM (STR) mode of power management. The voltage converter has a flip-flop, a resume & initialization logic circuit for producing a resume signal, a STR logic circuit for producing a STR signal, a first voltage-conversion unit and a second voltage-conversion unit. An output terminal of the resume & initialization logic circuit is connected to a first input terminal of the flip-flop. An output terminal of the STR logic circuit is connected to a second input terminal of the flip-flop. An output terminal of the flip-flop is connected to the first voltage-conversion unit, and a complementary output terminal of the flip-flop is connected to the second voltage-conversion unit. A suspension voltage or a power voltage is applied to the voltage pin of a system memory depending on the mode of power management.

Abstract: A data terminal apparatus includes a basic unit, a plurality of units, a power supply circuit, switching units and a controller. The basic unit realizes a basic function of the data terminal apparatus and requires a basic quantity of DC power. Each of the plurality of units realizes a specific function of the data terminal apparatus and requires quantities of DC power. The power supply circuit receives DC power from a power supply source, and can supply the DC power to the basic unit and the plurality of units. The switching units are provided for the plurality of units, and each of the switching units selectively supplies the DC power from the power supply circuit to a corresponding one of the plurality of units in response to a switching control signal. The controller selectively outputs the switching control signals to the switching units based on the DC power of the power supply source.

Abstract: A content addressable memory (CAM) includes a voltage power supply input and an enable input. An enable control circuit is connected to the enable input, and operates to compare an external voltage to an enable reference voltage. If the external voltage drops below the enable reference voltage, the enable control circuit drives the enable input to place the CAM into a low current, stand-by mode of operation. A voltage supply back-up circuit is connected to the voltage power supply input, and operates to compare the external voltage to a supply reference voltage. If the external voltage drops below the supply reference voltage, the voltage supply back-up circuit switches the voltage power supply input for the CAM from the external voltage input to a battery back-up. As an alternative, the voltage power supply input for the CAM includes a separate power input for a CAM array, and the switch causes only that separate power input for the CAM array to be powered from the battery back-up.

Abstract: A state saving circuit and method for using the same. The circuit comprises a first latch powered by an uninterrupted power supply, wherein the first latch includes a first pair of cross coupled inverters for storing data, and includes an input cut-off control for isolating the data in the first pair of cross coupled inverters; a second latch coupled to an output of the first latch and powered by an interruptible power supply, wherein the second latch includes a second pair of cross coupled inverters and a clock input for latching the data from the first latch to the second latch; and wherein an interruption of power to the second latch results in a state being saved in the first latch.

Abstract: A NAND EEPROM is disclosed which is capable of variously setting, for each chip, the voltage to be applied to the control gates of memory cells. The semiconductor chip includes a NAND memory cell array and a high-voltage generating circuit for generating data writing internal voltage VPP required when data is written on the memory cell array. Moreover, the semiconductor chip includes a set voltage selection circuit for arbitrarily setting the level of the voltage VPP generated by the high-voltage generating circuit for each chip and a multiplexer for extracting, to the outside of the chip, setting signal LTF which is a signal for enabling the level of the voltage VPP set arbitrarily.

Abstract: An architecture for registers and/or memory may provide a selectively disable payload portion. The architecture induced energy conservation. The architecture may include two or more payload portions for storage of payload data and a portion for storage of administrative data. Based on the contacts of the administrative data, certain payload portions may be enabled or disabled.