Abstract: The invention includes a single chip having multiple different devices integrated thereon for a common purpose. The chip includes a substrate having a peripheral area, a mid-chip area, and a central area. A plurality of FETs are formed in the peripheral area with each FET having a layer of single crystal rare earth material in at least one of a conductive channel, a gate insulator, or a gate stack. A plurality of photonic devices including light emitting diodes or vertical cavity surface emitting lasers are formed in the mid-chip area with each photonic device having an active layer of single crystal rare earth material. A plurality of photo detectors are formed in the central area.

Abstract: A semiconductor laser module includes a semiconductor laser unit and a light selecting unit. The semiconductor laser unit includes a semiconductor laser substrate and a plurality of distributed reflector semiconductor laser devices formed on the semiconductor laser substrate in an array. Each of the distributed reflector semiconductor laser devices is configured to emit a laser light of a different wavelength from an output facet. The light selecting unit includes a light selecting device substrate and a light selecting device formed on the light selecting device substrate. The light selecting device is configured to selectively output a laser light emitted from a distributed reflector semiconductor laser device. The semiconductor laser unit and the light selecting unit are attached to each other in such a manner that the light selecting device is optically coupled to the distributed reflector semiconductor laser devices.

Abstract: The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.

Abstract: An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with a wiring layer. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. One or more first OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the first OE elements positioned in optical alignment with the optical via for receiving the light. A second OE element embedded within the wiring layer. A carrier may be interposed between electrical interconnect elements and positioned between the wiring layer and a circuit board.

Abstract: An apparatus comprising a header comprising a platform for attaching opto-electronic components, an optical element, a laser diode (LD) configured to emit an optical signal that passes through the optical element, and a cap affixed to the header such that the cap is coaxially aligned with the header, wherein the cap and header encase the optical element and the LD.

Abstract: This semiconductor laser apparatus includes a base, a plurality of electrodes arranged along a first direction on an upper surface of the base, a plurality of semiconductor laser devices bonded to respective upper surfaces of the plurality of electrodes, emitting laser beams in a second direction, and a photodetector having a photosensitive surface arranged in a region of the base in a third direction relative to the plurality of semiconductor laser devices. An electrode arranged in a position other than end portions in the first direction and a fourth direction, of the plurality of electrodes has an extraction wiring portion arranged on the photosensitive surface of the photodetector.

Abstract: The present invention relates to a vertical cavity surface emitting laser device comprising a VCSEL with a monolithically integrated photodiode. The photodiode (2) is formed of a layer sequence of a first n-doped region (6), a p-doped region (7), an intrinsic region (8) and a second n-doped region (9) of a semiconductor material. The photodiode (2) and the laser share a common electrode, which is realized as an Ohmic n-contact (10) at said first n-doped region (6). The proposed device allows less complex manufacturing, resulting in lower manufacturing costs.

Abstract: A device includes a semiconductor layer including first and second cladding layers sandwiching an active layer, a groove electrically separates receiving and emitting areas, an active layer part forms a continuous region between first and second end surfaces on a first side of the active layer, the gain region has a reflection surface between the first and second end surfaces reflecting gain region generated light, a first gain region portion extending from the first end surface and a second gain region portion extending from the second end surface are tilted, some light from the first portion is reflected to be emitted from the second end surface, some light from the second portion is reflected to be emitted from the first end surface, and some light transmits through a mirror portion of the reflection surface and is received in the receiving area.

Abstract: It is an object of the present invention to improve the confinement of the carriers within a VCSEL. As a general concept of the invention, it is proposed to integrate a phototransistor layer structure into the layer stack of the VCSEL.

Abstract: The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.

Abstract: Provided is a mounting member having a light receiving element, capable of constraining increase in size and of arranging a plurality of laser element portions closer to each other. The mounting member includes three or more electrodes, which respectively include element mounting portions arranged in a first direction, and a light receiving element disposed in a second direction intersecting with the first direction relative to the element mounting portions. The length in the second direction of at least one of the element mounting portions disposed at both ends in the first direction among the three or more element mounting portions is smaller than the length in the second direction of an element mounting portion disposed at an inner position in the first direction among the three or more element mounting portions.

Abstract: A semiconductor device including a semiconductor substrate having a surface including an active semiconductor device including one of a laser and a photodiode; and a visual indicator disposed on the semiconductor body and at least adjacent to a portion of said active semiconductor device, the indicator having a state that shows if damage to the active semiconductor device may have occurred.

Abstract: An advanced, very high transmittance, back-illuminated, silicon-on-sapphire wafer substrate design is presented for enabling high quantum efficiency and high resolution, silicon or silicon-germanium avalanche photodiode detector arrays. The wafer substrate incorporates a stacked antireflective bilayer between the sapphire and silicon layers, comprised of single crystal aluminum nitride (AlN) and non-stoichiometric, silicon rich, amorphous silicon nitride (a-SiNX<1.33), that provides optimal refractive index matching between sapphire and silicon. A one quarter wavelength, magnesium fluoride (?/4-MgF2) antireflective layer deposited on the back surface of the thinned sapphire provides refractive index matching at the air-sapphire interface. Selecting a composition of x=0.62 for a-SiNX, tunes an optimal refractive index for the layer. Selecting design thicknesses of 52 nm for single crystal AlN, 30 nm for a-SiN0.

Abstract: A semiconductor laser device comprising a laser diode with an integrated photodiode, wherein one of the components of the laser diode with the integrated photodiode is also used for heating the laser diode. A simpler design of a wavelength-controlled semiconductor laser is thus obtained.

Abstract: A light receiving and emitting device includes: a light emitting unit and a light receiving unit which are provided on a same substrate, wherein the light emitting unit includes an active layer sandwiched between a first clad layer and a second clad layer, a first electrode electrically connected to the first clad layer, and a second electrode electrically connected to the second clad layer, the light receiving unit includes a light-absorbing layer, at least part of the active layer forms a gain region on a current path between the first electrode and the second electrode, the gain region is provided from a first side face of the active layer to a second side face parallel to the first side face so as to be inclined with respect to a perpendicular of the first side face as seen in a planar view, a light generated in the gain region is divided, at least one of an edge face on the first side face and an edge face on the second side face, the edge faces of the gain region, into a light emitted to an outside and

Abstract: The invention includes a single chip having multiple different devices integrated thereon for a common purpose. The chip includes a substrate having a peripheral area, a mid-chip area, and a central area. A plurality of FETs are formed in the peripheral area with each FET having a layer of single crystal rare earth material in at least one of a conductive channel, a gate insulator, or a gate stack. A plurality of photonic devices including light emitting diodes or vertical cavity surface emitting lasers are formed in the mid-chip area with each photonic device having an active layer of single crystal rare earth material. A plurality of photo detectors are formed in the central area.

Abstract: An advanced, back-illuminated, silicon avalanche photodiode (APD) design is presented using silicon-on-sapphire with a novel crystalline aluminum nitride (AlN) antireflective layer between the silicon and R-plane sapphire. The substrate supports optical and electrical integration of a high quantum efficiency silicon APD with a gallium nitride (GaN)-VCSEL diode in each pixel to form a novel, compact, emitter-detector pixel for passive and active 2-D and 3-D high resolution, imaging focal plane arrays. Silicon mesa pixels are anisotropically etched with a central inverted mesa frustum cavity. The APD detector is fabricated in the silicon mesa and the GaN-VCSEL diode is grown epitaxially in the center of the mesa. A sapphire microlens below each pixel collimates the VCSEL beam and focuses optical returns into the APD detector. APDs share a common front-side anode, and VCSELs share a common cathode. The APD cathode is electrically connected to the VCSEL diode anode in each emitter-detector pixel.

Abstract: A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs etching to form device waveguides and mirrors, preferably using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.

Abstract: A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs dry etching to form device waveguides and mirrors. The dry etching is preferably performed using a Chemically Assisted Ion Beam Etching (CAIBE) system.

Abstract: Invention relates to three types of laser light sources: diode laser, integral diode laser (in form of integrally connected diode lasers) and integral semiconductor optical amplifier (in form of integrally connected driving laser diode and semiconductor amplifier element), which amplifier consists of original optical resonator of diode laser and original laser radiation coupling. Two reflectors in optical resonator of diode laser, which falls into three types of above-mentioned laser radiation sources, have greatest possible reflection factor on both sides thereof and radiation coupling from active layer is carried out, by-passing active layer, through broadband semiconductor layers of the modified heterostructure of diode laser with practically fully antireflective (less than 0.01%) optical face.

Abstract: An optical device is disclosed, including a surface emitting laser element having a surface emitting laser which emits a light in a direction which is perpendicular to a substrate face; a light receiving element which monitors the light of the surface emitting laser; a package provided with a region on which the surface emitting laser element and the light receiving element are provided; and a lid which has a window through which passes the light of the surface emitting laser, the window being formed with a transparent member, and which covers the surface emitting laser element and the light receiving element.

Abstract: A light emitting and receiving device having a first region and a second region adjacent to the first region in a plan view, includes: a light absorbing layer formed in the first and second regions; a first cladding layer formed above the light absorbing layer; an active layer formed above the first cladding layer in the first region; and a second cladding layer formed above the active layer, wherein at least part of the active layer forms a gain region, a stepped side surface having an end surface of the gain region is formed at the boundary between the first region and the second region, light produced in the gain region exits through the end surface of the gain region, and part of the light having exited reaches the light absorbing layer in the second region and is received by the light absorbing layer.

Abstract: An optical semiconductor device includes: a beam splitter that splits an input optical axis into a first split axis having a first split angle and a second split axis having a second split angle larger than the first split angle; a first unit that is located on the first split axis of the beam splitter and has one or more optical components, an interval between a more distant end of the first unit and the beam splitter having a first length; a second unit that is located on the second split axis of the beam splitter and has one or more optical components, an interval between a more distant end of the second unit and the beam splitter having a second length larger than the first length; and an optical semiconductor element that has a first outputting end having a first output axis coupled optically to the input optical axis of the beam splitter, a second outputting end having a second output axis, and optical gain, the optical semiconductor element being inclined so that the second output axis is arranged away

Abstract: An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with a wiring layer. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. One or more first OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the first OE elements positioned in optical alignment with the optical via for receiving the light. A second OE element embedded within the wiring layer. A carrier may be interposed between electrical interconnect elements and positioned between the wiring layer and a circuit board.

Abstract: A semiconductor laser is embodied as a surface emitting thin-film semiconductor laser (2) with a semiconductor body (4). The semiconductor body (4) comprises a first and a second planar surface (12, 14). The semiconductor body (4) comprises between the planar surfaces at least one active layer (10) for generating radiation. The semiconductor body (4) has, for coupling out the radiation from the active layer (10) toward the first planar surface (12), at least one first mirror area (26) inclined with respect to the active layer (10).

Abstract: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.

Abstract: An optoelectronic device is provided. A light source emitter and a light source receiver are integrated in the device. The light source emitter is a Zn-diffused vertical cavity surface-emitting laser (VCSEL). The light source receiver is a uni-traveling-carrier photodiode (UTC-PD). With the VCSEL, a 10 Gb/s eye is opened under a small voltage and a small signal amplitude. With the UTC-PD, the 10 Gb/s eye is passed even under zero-bias. Thus, the optoelectronic device has a high speed and power consumption is saved.

Abstract: An advanced, back-illuminated, silicon avalanche photodiode (APD) design is presented using silicon-on-sapphire with a novel crystalline aluminum nitride (AlN) antireflective layer between the silicon and R-plane sapphire. The substrate supports optical and electrical integration of a high quantum efficiency silicon APD with a gallium nitride (GaN)-VCSEL diode in each pixel to form a novel, compact, emitter-detector pixel for passive and active 2-D and 3-D high resolution, imaging focal plane arrays. Silicon mesa pixels are anisotropically etched with a central inverted mesa frustum cavity. The APD detector is fabricated in the silicon mesa and the GaN-VCSEL diode is grown epitaxially in the center of the mesa. A sapphire microlens below each pixel collimates the VCSEL beam and focuses optical returns into the APD detector. APDs share a common front-side anode, and VCSELs share a common cathode. The APD cathode is electrically connected to the VCSEL diode anode in each emitter-detector pixel.

Abstract: An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with a wiring layer. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. One or more first OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the first OE elements positioned in optical alignment with the optical via for receiving the light. A second OE element embedded within the wiring layer. A carrier may be interposed between electrical interconnect elements and positioned between the wiring layer and a circuit board.

Abstract: The invention provides an optoelectronic device combining a vertical cavity surface emitting laser (VCSEL) and a photodetector for monitoring the output power of the vertical cavity surface emitting laser. To improve the signal-to-noise ratio of the photodetector, a light deflector is interposed between the photodetector and the VCSEL.

Abstract: An optical device includes: a surface-emitting type semiconductor laser section; at least one isolation section formed above the surface-emitting type semiconductor laser section; and a photodetector section formed above the isolation section, wherein the surface-emitting type semiconductor laser section includes a first mirror, an active layer formed above the first mirror and a second mirror formed above the active layer, the photodetector section includes a first contact layer, a photoabsorption layer formed above the first contact layer and a second contact layer formed above the photoabsorption layer, and the isolation section includes a first isolation layer of a conductivity type different from a conductivity type of the second mirror, and a second isolation layer formed above the first isolation layer and having a conductivity type different from the conductivity type of the first contact layer and the first isolation layer.

Abstract: A chip module package structure applied to an optical input device includes a cover body, a first chip module, and a second chip module. The first chip module and the second chip module are respectively combined with the cover body, the first chip module has an optical source, and the second chip module has an optical sensor. Further, the optical source and the optical sensor form a preset relative spatial position relation, such that a part of light emitted by the optical source is received by the optical sensor after at least one reflection.

Abstract: An optical semiconductor device includes a semiconductor laser, a first optical waveguide, an optical coupler for branching light guided from the semiconductor laser through the first optical waveguide into two lights, two second optical waveguides, diffraction gratings provided individually on the two second optical waveguides, and an optical detector for detecting light guided through one of the two diffraction gratings, and the components are provided on the same substrate. The optical semiconductor device is configured such that reflection returning lights from the diffraction gratings side to the semiconductor laser side interfere with each other and thereby extinguish each other at the optical coupler and the phases of the reflection returning lights from the diffraction gratings side are displaced from each other by ? at the optical coupler portion.

Abstract: A semiconductor laser device comprising a laser diode with an integrated photodiode, wherein one of the components of the laser diode with the integrated photodiode is also used for heating the laser diode. A simpler design of a wavelength-controlled semiconductor laser is thus obtained.

Abstract: A chaotic light generator device comprises laser structures integrated on a common substrate. Each laser structure comprises a ridge of light amplifying material that forms a waveguide extending between at least partly reflective surfaces. Each laser structure comprises an injection electrode for injecting electric current into the ridge of light amplifying material. The laser structures are mutually coupled for exchanging light. A current feed circuit is coupled to the electrodes and configured to apply mutually different current densities to the electrodes of the laser structures. Choosing different lengths of the laser structures and suitable current densities, chaotic light emission is achieved suitable for telecommunication. Ultrashort pulses result from coupling of Eigenmodes with relaxation oscillations.

Abstract: A power monitoring system uses a low loss reflective element to partially split the output laser beams from an array of laser sources, in a parallel configuration, to produce a monitor beams for each laser source. Each of these monitor beams may propagate within the reflective element in a lossless manner under total internal reflection and into one of a plurality of photodiodes that sense an optical characteristic such as output beam intensity, where this sensed signal is then used as part of a feedback control to control operation of the laser sources in the array.

Abstract: The optoelectronic circuit includes a photoreceptor (1) made in a silicon semiconductor substrate (4), and a monomode VCSEL laser diode (2) made in a gallium arsenide substrate. The photoreceptor includes at least one photosensitive area with a pixel array for picking up light and an area with a control and processing unit for the signals supplied by the pixels. The laser diode is mounted and electrically connected directly on one part of the photoreceptor. The laser diode is connected by a conductive terminal (12) to a first contact pad (3) at the bottom of a cavity (13) made through a passivation layer (5) of the photoreceptor. An electrode (17) on the top of the diode is connected by a metal wire (15) to a second contact pad (3) of the photoreceptor. The photoreceptor controls the diode directly via the electrode and the conductive terminal to generate a laser beam (L).

Abstract: An optical communication system for performing data transmission with optical signals comprises a first optical transmitter and a first optical receiver. The first optical transmitter has a first surface-emitting laser including an active layer of a multiple quantum well structure having a quantum well layer of InxGa1-xAs (0.15?x?0.35), the first surface-emitting laser having an oscillation wavelength ranging from 1000 nm to 1100 nm inclusive. The first optical transmitter transmits an optical signal generated by the first surface-emitting laser. The first optical receiver is connected to the first optical transmitter by a first optical transfer path, and receives the optical signal transmitted from the first optical transmitter through the first optical transfer path.

Abstract: The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.

Abstract: A device for generating or detecting electromagnetic radiation includes a substrate, a gain medium provided on the substrate, a plurality of reflectors for confining electromagnetic radiation at a predetermined frequency range and substantially perpendicular to a face of the substrate, and spacer means for spacing the reflectors from each other at a predetermined distance, with the gain medium being sandwiched between the reflectors. The gain medium has a quantum well structure formed of a semiconductor material, and gives a gain to electromagnetic radiation by transitioning between subbands created in at least a quantum well in the quantum well structure. The spacer means is formed of a material different from a material of the gain medium.

Abstract: A surface emitting laser comprises an underlayer, an active layer formed on the underlayer, a slab layer formed on the active layer and having a photonic crystal structure optically combined with the active layer, and a metal thin film formed on the slab layer and having a periodic fine structure; and enabling taking-out of the light beam propagating in a layer-plane direction in the slab layer through the metal thin film.

Abstract: Various methods and apparatuses are described in which an array of optical gain mediums capable of lasing are contained in a single integral unit. The array may contain four or more optical gain mediums capable of lasing. Each optical gain medium capable of lasing supplies a separate optical signal containing a band of wavelengths different than the other optical gain mediums capable of lasing in the array to a first multiplexer/demultiplexer. A connection for an output fiber exists to route an optical signal to and from a passive optical network.

Abstract: The present invention relates to a vertical cavity surface emitting laser device comprising a VCSEL with a monolithically integrated photodiode. The photodiode (2) is formed of a layer sequence of a first n-doped region (6), a p-doped region (7), an intrinsic region (8) and a second n-doped region (9) of a semiconductor material. The photodiode (2) and the laser share a common electrode, which is realized as an Ohmic n-contact (10) at said first n-doped region (6). The proposed device allows less complex manufacturing, resulting in lower manufacturing costs.

Abstract: An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with a wiring layer. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. One or more first OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the first OE elements positioned in optical alignment with the optical via for receiving the light. A second OE element embedded within the wiring layer. A carrier may be interposed between electrical interconnect elements and positioned between the wiring layer and a circuit board.

Abstract: An optical device is disclosed. The optical device includes a first packaging unit and a second packaging unit. The first packaging unit includes a first lead frame and a sensor electrically coupled to the first lead frame. The second packaging unit includes an emitting die and a second lead frame. The emitting die has an optical axis and is operable to emit a light. The second lead frame has a first portion disposed within the second packaging unit and a second portion extending into the first packaging unit so that an angle of about 5-85 degrees is formed between the optical axis of the emitting die and the sensing plane of the sensor.

Abstract: The present invention provides a laser diode realizing improved light detection precision. The laser diode includes a stack structure in which a first semiconductor layer of a first conduction type, an active layer, and a second semiconductor layer of a second conduction type are included in this order; a photodetection layer; and a plurality of light absorption layers provided on the corresponding position of antinodes or nodes of standing waves of light output from the active layer.

Abstract: According to various illustrative embodiments, a device, method, and system for measuring optical fine structure of lateral modes of an optical cavity are described. In one aspect, the device comprises at least one photodetector arranged to detect an output of the optical cavity in a lateral direction thereof. The device also comprises an analyzer coupled to an output of the at least one photodetector and arranged to analyze at least a portion of signals produced in the at least one photodetector by at least a portion of the lateral modes of the optical cavity. The device also comprises a processor arranged to determine the optical fine structure of the at least the portion of the lateral modes of the optical cavity based on an output of the analyzer.

Abstract: Semiconductor diode lasers are phase-locked by direct current injection and combined to form a single coherent output beam. The optical power is amplified by use of fiber amplifiers. Electronically control of the optical phases of each emitter enables power efficient combining of output beams to be maintained under dynamic conditions.

Abstract: A lock in pinned photodiode photodetector includes a plurality of output ports which are sequentially enabled. Each time when the output port is enabled is considered to be a different bin of time. A specified pattern is sent, and the output bins are investigated to look for that pattern. The time when the pattern is received indicates the time of flight. A CMOS active pixel image sensor includes a plurality of pinned photodiode photodetectors that use a common output transistor. In one configuration, the charge from two or more pinned photodiodes may be binned together and applied to the gate of an output transistor.

Abstract: A lock in pinned photodiode photodetector includes a plurality of output ports which are sequentially enabled. Each time when the output port is enabled is considered to be a different bin of time. A specified pattern is sent, and the output bins are investigated to look for that pattern. The time when the pattern is received indicates the time of flight A CMOS active pixel image sensor includes a plurality of pinned photodiode photodetectors that use a common output transistor. In one configuration, the charge from two or more pinned photodiodes may be binned together and applied to the gate of an output transistor.