Abstract: A semiconductor laser device has structure including: a semiconductor laser chip having an emission surface and a reflection surface which are opposing end surfaces of a resonator; and a photodiode for detecting light that exits from the reflection surface side, the photodiode being used in a wavelength band where a sensitivity of the photodiode rises as a wavelength lengthens, in which the emission surface has a first dielectric multilayer film formed thereon and the reflection surface has a second dielectric multilayer film formed thereon, and in which, when a wavelength at which a reflectance of the first dielectric multilayer film peaks is given as ?f and a wavelength at which a reflectance of the second dielectric multilayer film peaks is given as ?r, a relation ?f<?r is satisfied.

Abstract: The present invention relates to opto-isolators. Opto-isolators are disclosed that include a transmitter package and a vertical VCSEL disposed within the transmitter package. The opto-isolators further include a receiver package and a photodetector disposed within the receiver package. The photodetector is optically coupled to the VCSEL and configured to receive an output optical signal generated by the VCSEL. The opto-isolators further include an alignment package configured to receive the transmitter package and the receiver package. In another embodiment, opto-isolators include a VCSEL and a photodetector optically coupled to the VCSEL and configured to receive an output optical signal generated by the VCSEL. The opto-isolators further include a package enclosing both the VCSEL and the photodetector.

Abstract: The present invention comprises: a laser light source 101 operable to output a laser light; an optical component 114 operable to couple, to an optical fiber 126, the laser light outputted from the laser light source 101; an actuator 118 operable to hold the optical component 114; a photoreceiver 503 operable to monitor the laser light outputted from the optical fiber; and a control device 117 operable to drive the actuator 118 in accordance with a result of the monitoring by the photoreceiver 503, thereby controlling a position of the optical component 114.

Abstract: The present invention relates to a semiconductor laser for use in an optical module for measuring distances and/or movements, using the self-mixing effect. The semiconductor laser comprises a layer structure including an active region (3) embedded between two layer sequences (1, 2) and further comprises a photodetector arranged to measure an intensity of an optical field resonating in said laser. The photodetector is a phototransistor composed of an emitter layer (e), a collector layer (c) and a base layer (b), each of which being a bulk layer and forming part of one of said layer sequences (1, 2). With the proposed semiconductor laser an optical module based on this laser can be manufactured more easily, at lower costs and in a smaller size than known modules.

Abstract: Provided are a vertical cavity surface emitting laser (VCSEL) module providing accurate alignment between a VCSEL and a monitoring photodiode (MPD) for efficiently detecting light emitted by the VCSEL and a method of fabricating the VCSEL module. The VCSEL module includes: a first mirror layer, a first semiconductor conducting layer, an active layer, a tunnel junction layer, and a second semiconductor conducting layer sequentially formed on a first region in a substrate having first and second regions; a MPD disposed on a portion of the second semiconductor conducting layer in the first region; and a VCSEL including layers having the same shapes as the first mirror layer, the first semiconductor conducting layer, the active layer, the tunnel junction layer and the second semiconductor conducting layer in the first region, and a second mirror layer formed on a portion of the second semiconductor conducting layer, and sequentially formed on the second region in the substrate.

Abstract: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

Abstract: Disclosed herein is a semiconductor light emitting apparatus that includes: a semiconductor light emitting device having a first semiconductor laminate structure including a light emitting region, and a light outgoing window permitting the light emitted from the light emitting region to go out therethrough in the lamination direction; a light transmitting part provided in a region corresponding to the light emitting region; a metal part provided in a region, corresponding to an outer peripheral region of the light emitting region, of the first semiconductor laminate structure; and a semiconductor light detector having a second semiconductor laminate structure including a light absorbing layer for absorbing a part of the light incident from the lamination direction. In the apparatus, the semiconductor light emitting device, a layer including the light transmitting part and the metal part, and the semiconductor light detector are integrally formed in the state of being laminated in this order.

Abstract: An electrical-optical coupling and detecting device. An apparatus according to an embodiment of the present invention includes a reflective surface defined on semiconductor material. The reflective surface is to reflect an incident optical beam towards an optical destination. An optical detector is monolithically integrated in the reflective surface of the semiconductor material. The optical detector arranged in the reflective surface of the semiconductor material is to detect the incident optical beam.

Abstract: Embodiments of an optical detection apparatus are disclosed which may include one or more of a waveguide, a trench formed in the waveguide, a reflective surface, and a photodetector. The waveguide may be formed in a semiconductor substrate to propagate an optical signal received at a first end of the waveguide. The trench may also be formed in the waveguide having a first sidewall and a second sidewall, the first and second sidewalls forming first and second angles with the waveguide's propagation direction. The second sidewall may include a reflective surface formed thereon. The photodetector may be configured to receive an optical signal propagated in the waveguide, through the first sidewall and reflected from the reflective surface on the second sidewall.

Abstract: A measuring arrangement comprises a radiation device (SE), having at least one first surface emitting semiconductor component (1) with a vertical emission direction, a detection device (DE) for detecting reflected radiation, and an evaluation circuit (AS), set up for controlling the radiation device (SE) and the detection device (DE) and for processing a detection result of the detection device (DE). The semiconductor component (1) comprises a semiconductor body (2) with a plurality of active regions (4a, 4b) suitable for generating radiation and arranged at a distance from one another in a vertical direction. In this case, a tunnel junction (5) is monolithically integrated in the semiconductor body (2) between two active regions (4a, 4b) and the two active regions (4a, 4b) are electrically conductively connected by means of the tunnel junction during operation of the semiconductor component (1).

Abstract: A device includes a semiconductor layer including first and second cladding layers sandwiching an active layer, a groove electrically separates receiving and emitting areas, an active layer part forms a continuous region between first and second end surfaces on a first side of the active layer, the gain region has a reflection surface between the first and second end surfaces reflecting gain region generated light, a first gain region portion extending from the first end surface and a second gain region portion extending from the second end surface are tilted, some light from the first portion is reflected to be emitted from the second end surface, some light from the second portion is reflected to be emitted from the first end surface, and some light transmits through a mirror portion of the reflection surface and is received in the receiving area.

Abstract: A measuring device includes a VCSEL of a first-order or high-order single mode emitting laser beams, a driving part configured to drive the VCSEL, a detecting part configured to detect an electric signal relating to feedback lights generated when laser beams are projected onto an object, and a calculating part configured to identify a direction of movement of the object on the basis of the electric signal detected by the detecting part.

Abstract: A device including a semiconductor laser device having a semiconductor laser chip, and a molded resin having a light diffusion capability. The semiconductor laser chip is covered with the molded resin.

Abstract: A method for manufacturing an laser diode includes: providing a wafer having thereon a semiconductor structure; depositing an SiO2 film; forming channels and a waveguide ridge between the channels in the wafer; forming an SiO2 film over the wafer; forming a resist pattern covering the SiO2 film in the channels such that the top surfaces of the resist pattern are lower than the top surface of the deposited SiO2 film on the top of the waveguide ridge, the resist pattern exposing the SiO2 film on the top of the waveguide ridge; removing the SiO2 film and the deposited SiO2 film by wet etching, using the resist pattern as a mask, to expose a p-GaN layer in the waveguide ridge; and forming an electrode layer on the top surface of the p-GaN layer.

Abstract: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

Abstract: A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate. An active region is formed on the bottom mirror. A top DBR mirror is formed on the active region. A trench is formed in the at least the top mirror. An aperture is oxidized into the VCSEL. At least one of the bottom DBR mirror, the top DBR mirror, the metal contacts, the trench, and/or the aperture is optimized to make the VCSEL more optically sensitive to light reflected back into the VCSEL.

Abstract: A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.

Abstract: A laser diode device capable of detecting laser light with a simple structure is provided. A laser diode device, includes a semiconductor layer formed through laminating a first conductive type layer, an active layer and a second conductive type layer in this order, the second conductive type layer including a striped current confinement structure in a top portion thereof, and a plurality of electrodes being formed on the second conductive type layer side of the semiconductor layer and being electrically connected to the second conductive type layer at predetermined intervals, wherein the semiconductor layer has a photoreceptor region in a region corresponding to an electrode (a first electrode) of the plurality of electrodes except for at least one, the photoreceptor region absorbing a part of the light emitted in the semiconductor layer to convert the part of the light into a current signal.

Abstract: A surface emitting laser (100) and a monitoring photodetector (MPD) 158 are mounted in a TO (transistor outline package) can (150) on the same plane as one another. Light from a rear facet (108) of the laser is directed to the MPD through a polymer light guide (164).

Abstract: A composite image device having image capturing, laser pointing, lighting and related functions in one includes a first perspective window, a second perspective window, a third perspective window, an image capturing module, laser source module, a light source module and a switchable light modulating module. The image capturing module captures ambient light through the first perspective window to generate digital image data. The laser source module emits a laser through the second perspective window. The light source module emits illuminating light through the third perspective window. The switchable light modulating module includes at least a light modulating gate and a switching device for moving the at least a light modulating gate to a position relatively parallel to the second or third perspective window to modulate the emitted laser or the emitted illuminating light.

Abstract: A semiconductor ring laser (SRL) section is monolithically integrated with a DFB or DBR master laser section on a semiconductor substrate of a light-emitting device to provide an injection locking mode of operation that can result in low-cost ultrafast (over 100 GHz) functional chip that will be easy to use in practice.

Abstract: A method for manufacturing an optical element having a surface-emitting type semiconductor laser and a photodetector element that detects light emitted from the surface-emitting type semiconductor laser, the method including the steps of: (a) laminating, above a substrate, semiconductor layers for forming a first mirror, an active layer, a second mirror, a photoabsorption layer, an etching stopper layer and a contact layer; (b) patterning the semiconductor layers to form at least a photoabsorption layer, an etching stopper layer and a contact layer; (c) forming an electrode above the contact layer; and (d) etching a portion of the contact layer until an upper surface of the etching stopper layer is exposed.

Abstract: Provided is an optical connection device and a method of fabricating the same. The optical connection device includes a laser diode formed on a substrate, a photodiode that is formed on the laser diode and has an aperture which is an exit of light emitted from the laser diode, and a plurality of electrode pads connected to electrodes for the laser diode and the photodiode on the substrate. A direction in which the light of the laser diode is emitted is opposite to a bonding direction between the laser diode and the substrate with respect to the laser diode.

Abstract: An optical semiconductor element includes: a surface-emitting type semiconductor laser that emits laser light; a photodetecting element formed above the surface-emitting type semiconductor; a first electrode of a first polarity formed on the surface-emitting type semiconductor laser; a second electrode of a second polarity different from the first polarity formed on the photodetecting element; and an additional electrode that covers the first electrode and the second electrode.

Abstract: A semiconductor laser device includes a semiconductor device layer having an emission layer and formed with a current path on a semiconductor layer in the vicinity of the emission layer, a current blocking layer formed in the vicinity of the current path, and a heat-radiation layer formed to be provided at least in the vicinity of a region formed with a cavity facet of the semiconductor device layer and be located above the current path, and having thermal conductivity larger than that of the current blocking layer.

Abstract: A tunable laser is provided, including: a multiple ring resonator that is formed by coupling ring resonant elements having different optical path length from each other; an input/output-side waveguide connected to one of the ring resonant elements; a reflection-side wave guide connected to another one of the ring resonant elements; a PLC substrate on which the multiple ring resonator, the input/output side waveguide, and the reflection-side waveguide are formed; a high reflection film provided to the reflection-side waveguide; an SOA connected to the input/output-side waveguide; film heaters and a phase control region of the SOA for changing the resonant wavelength of the multiple ring resonator; and a light-receiving element for detecting the resonant wavelength of the multiple ring resonator in a thru port of a directional coupler.

Abstract: A laser diode has a horizontal cavity and a mirror attached to the horizontal cavity at an angle of substantially 45° or substantially 135°. The laser diode is mounted on a stem substantially horizontally with taking light vertically emitted to the horizontal cavity as an optical signal, and light horizontally emitted as an optical signal for monitoring, respectively. A photodetector is mounted on the stem substantially orthogonally and so as to let in the optical signal for monitoring.

Abstract: A cascade laser device, including a multilayer film structure with a multiple quantum well including a potential barrier and a quantum well; and an electric field applying portion for applying an electric field to the multilayer film structure. The multilayer film structure includes at least two first regions and a second region. The second region is sandwiched between the two first regions; each of the first regions includes multiple sub-bands. When the electric field is applied, carriers are transported from a sub-band in the higher energy quantum well to a sub-band in the lower energy quantum well via the potential barrier in the first regions by tunneling permitted by interaction with light. The second region is thinner than twice a skin depth of the light and includes at least a film having an energy band. The carriers are subjected to energy relaxation in the energy band.

Abstract: Semiconductor diode lasers are phase-locked by direct current injection and combined to form a single coherent output beam. The optical power is amplified by use of fiber amplifiers. Electronically control of the optical phases of each emitter enables power efficient combining of output beams to be maintained under dynamic conditions.

Abstract: In general, a complex-coupled distributed feedback (DFB) semiconductor laser includes a grating formed by grooves through at least a part of an active region of a laser cavity. The complex-coupled DFB laser may be configured with a wavelength monitoring section and may be configured to provide facet power asymmetry. The wavelength monitoring section may include a second-order grating section configured to emit radiation (e.g., vertical radiation) from a side of the DFB laser for monitoring.

Abstract: A semiconductor laser device includes a supporting substrate having a wiring pattern thereon; LD fixed on the surface of the supporting substrate and having a signal output section that emits signal laser light and a monitoring output section that emits monitoring laser light; and a monitoring PD. The monitoring PD includes a semiconductor substrate having a region that transmits light of the wavelength of the monitoring laser light; and a light receiving section for photoelectric conversion formed on the surface of the semiconductor substrate, one incident surface of the side surfaces of the semiconductor substrate arranged in a position to which the monitoring laser light can be made incident, the light receiving section arranged in a position higher than the monitoring output section, and a back surface of the semiconductor substrate and the wiring pattern fixed on the supporting substrate to oppose each other.

Abstract: A laser and detector integrated on corresponding epitaxial layers of a single chip cooperate with on-chip and/or external optics to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels. A monitoring photodetector is fabricated in the detector epitaxy adjacent one end of the laser.

Abstract: A sensor system with a lighting device and a detector device is specified. The lighting device is provided for emitting laser radiation of a first wavelength and laser radiation of a second wavelength different from the first. The detector device is provided for detecting electromagnetic radiation of the first and the second wavelength.

Abstract: The present invention is to provide an LD module that can detect a wavelength fluctuation with a simple configuration and can reduce its size and prices. The LD module includes a double-sided light-emitting LD element for emitting an output light and a backward light in both forward and backward directions, a reference LD element whose temperature dependence of an oscillation wavelength is different from that of the double-sided light-emitting LD element, and a PD for receiving a multiplexed wave of the backward light of the double-sided light-emitting LD element and an output light of the reference LD element and detecting a beat component generated by the multiplexing.

Abstract: A method and apparatus are provided for protecting a semiconductor device from damage. The method may include the steps of providing an active semiconductor device on a surface of a semiconductor substrate where the active device is surrounded by an inactive semiconductor area, and providing a soft metallic guard element in the inactive semiconductor area around at least a portion of the periphery of the active device wherein the metallic guard element is connected to ground potential and not to the active device.

Abstract: Monolithic single and/or dual detector structures are fabricated on the emitting surface of a VCSEL and/or on a lens or glass substrate configured to be positioned along the axis of emission of an optical light source. Each monolithic detector structure includes one or two PIN detectors fabricated from amorphous silicon germanium with carbon doping or amorphous germanium with hydrogen doping. The monolithic detectors may additionally include various metallization layers, buffer layers, and/or anti-reflective coatings. The monolithic detectors can be grown on 1550 NM VCSELs used in optical transmitters, including lasers with managed chirp and TOSA modules, to reduce power and real estate requirements of the optical transmitters, enabling the optical transmitters to be implemented in long-reach SFP+ transceivers.

Abstract: A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.

Abstract: Provided is an optical connection device and a method of fabricating the same. The optical connection device includes a laser diode formed on a substrate, a photodiode that is formed on the laser diode and has an aperture which is an exit of light emitted from the laser diode, and a plurality of electrode pads connected to electrodes for the laser diode and the photodiode on the substrate. A direction in which the light of the laser diode is emitted is opposite to a bonding direction between the laser diode and the substrate with respect to the laser diode.

Abstract: An optical module includes a fiber array, a laser diode array and a photodiode array. The fiber array has optical fibers which are divided to a transmitter group and a receiver group. The laser diode array has laser diodes which are grouped in a transmitter group. The photodiode array has photodiodes which are divided to a monitor group and a receiver group. The laser diode array is provided between the fiber array and the photodiode array. Each optical fiber of the transmitter group, each laser diode of the transmitter group and each photodiode of the monitor group are optically aligned, respectively. Each optical fiber of the receiver group is optically aligned with each photodiode of the receiver group, respectively.

Abstract: A semiconductor laser drive system and a semiconductor laser driving method where both internal noise and optical feedback noise can be simultaneously reduced are provided at low cost and low power consumption.

Abstract: A method for the frequency stabilization of a gas laser with a laser tube (1), in stable operation includes a continuous operation control procedure with the following steps: Operating the gas laser for the radiation of laser light; measuring an intensity of one component of the radiated laser light with a detector (8); adjusting a tube temperature of the laser tube (1) by means of a control system (7), so that the measured intensity is controlled to a set-point value. During a startup phase, the procedure includes the following steps: Measuring an ambient temperature; controlling the condition of the laser tube (1) by means of the control system (7) to a set-point state, wherein the set-point state corresponds to a temperature of the laser tube (1) at the measured ambient temperature in the steady condition without any further heating or cooling; and switching over to the continuous operation control.

Abstract: In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavelength on the side of short wavelength is higher than that at the second resonance wavelength on the side of long wavelength. An absorption coefficient of an optical absorption layer when no electric field is applied is small for the first and second resonance wavelengths, and when an electric field is applied, an absorption coefficient of the optical absorption layer for the first resonance wavelength on the side of short wavelength is larger than that for the second resonance wavelength on the side of long wavelength.

Abstract: A light-emitting module outputting laser beam emitted from a semiconductor light-emitting element via a lens, the light-emitting module includes a first main plane, a mount portion on the first main plane that mounts the semiconductor light-emitting element, a lens holding portion that holds the lens so that a light axis of the lens corresponds to a reference line crossed at right angles to the first main plane, a semiconductor light-receiving element that receives the laser beam reflected by the lens out of the laser beam emitted from the semiconductor light-emitting element. The semiconductor light-receiving element is positioned on the light axis of the lens and the semiconductor light-emitting element is provided away from the light axis of the lens.

Abstract: The present invention comprises: a laser light source 101 operable to output a laser light; an optical component 114 operable to couple, to an optical fiber 126, the laser light outputted from the laser light source 101; an actuator 118 operable to hold the optical component 114; a photoreceiver 503 operable to monitor the laser light outputted from the optical fiber; and a control device 117 operable to drive the actuator 118 in accordance with a result of the monitoring by the photoreceiver 503, thereby controlling a position of the optical component 114.

Abstract: The optoelectronic circuit includes a photoreceptor (1) made in a silicon semiconductor substrate (4), and a monomode VCSEL laser diode (2) made in particular in a gallium arsenide substrate. The photoreceptor includes at least one photosensitive area with a pixel array for picking up light and an area with a control and processing unit for the signals supplied by the pixels. The laser diode (2) is mounted and electrically connected directly on one part of the photoreceptor. This laser diode may be housed in a cavity (13) made through a passivation layer (5) of the photoreceptor, and connected by a conductive terminal (12) to a first contact pad (3) at the bottom of the cavity. An electrode (17) on the top of the diode can be connected by a metal wire (15) to a second neighbouring accessible contact pad (3) of the photoreceptor. The photoreceptor (1) controls the diode directly via the electrode and the conductive terminal to generate a laser beam (L).

Abstract: An optical pickup according to the present invention includes an integrated circuit element (LDD) 5 for driving first, second, and third semiconductor lasers 3, 4, and 5. The LDD 50 is shaped so as to have a rectangular principal face surrounded by one side, with a plurality of input/output pins being arranged along each side. The plurality of input/output pins include a first pin group connected to a blue-violet laser 5 whose oscillation wavelength is the shortest, a second pin group connected to a red laser 4, and a third pin group connected to an infrared laser 3. The wiring structure of the optical pickup includes a first transmission line 41 for connecting the first pin group to the blue-violet laser 5, a second transmission line 33 for connecting the second pin group to the red laser 4, and a third transmission line 31 for connecting the third pin group to the infrared laser 3, where the first transmission line 41 is shorter than both the second and third transmission lines 31 and 33.

Abstract: A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a ?/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.

Abstract: Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, and a III-V structure bonded to the SOI structure, the III-V structure comprising a quantum well region, a hybrid waveguide, coupled to the quantum well region and the SOI structure adjacent to the passive waveguide, and a mesa, coupled to the quantum well region, wherein when light passes through the hybrid waveguide, the quantum well region detects the light and generates current based on the light detected.

Abstract: An optical element includes a surface-emitting type semiconductor laser, and a light-receiving element that detects a part of laser light emitted from the surface-emitting type semiconductor laser, wherein the light-receiving element is formed above the surface-emitting type semiconductor laser and includes a semiconductor layer having one or more layers, and at least one of the layers in the semiconductor layer has a plane configuration that has anisotropy.

Abstract: This relates to an opto-electronic device comprising at least two opto-electronic components (1, 2) which work together, including a first one that is a surface light emitting laser (1) and another opto-electronic component (2). Each of the opto-electronic components (1, 2) is mounted on a main face (3.1, 3.2) that is different and opposite an intermediate layer (3) incorporating a grating coupler (5) coupled to an optical wave guide (4) designed to transport part of the light emitted by the surface emitting laser (1). The grating coupler (5) is sandwiched between the emissive face of the surface emitting laser (1) and the other opto-electronic component (2).