Abstract: A surface emitting laser (100) and a monitoring photodetector (MPD) 158 are mounted in a TO (transistor outline package) can (150) on the same plane as one another. Light from a rear facet (108) of the laser is directed to the MPD through a polymer light guide (164).

Abstract: An optical element includes: a surface emitting semiconductor laser portion; a separator formed superjacent to the surface emitting semiconductor laser portion; and a light detector formed superjacent to the separator. The separator electrically separates the surface emitting semiconductor laser portion and the light detector and has a first separation layer made of a first conductive type semiconductor and a second separation layer that is formed one of superjacent to and lower the first separation layer and is made of a second conductive type semiconductor having a refractive index different from a refractive index of the first separation layer. The separator functions as a mirror that reflects at least a part of light having an oscillation wavelength generated from the surface emitting semiconductor laser portion at an interface between the first separation layer and the second separation layer.

Abstract: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

Abstract: A wavelength of an optical source is monitored by first and second adjacent detectors on a common base. A bulk reflective component has first and second partially reflective surfaces that respectively direct first and second portions of energy from the source to the first and second detectors. A wavelength discriminator is positioned between the first detector and first surface. An optical isolator downstream of the reflective component prevents radiation from the source and exiting the component from being coupled to the detectors and back to the source.

Abstract: Embodiments of an optical detection apparatus are disclosed which may include one or more of a waveguide, a trench formed in the waveguide, a reflective surface, and a photodetector. The waveguide may be formed in a semiconductor substrate to propagate an optical signal received at a first end of the waveguide. The trench may also be formed in the waveguide having a first sidewall and a second sidewall, the first and second sidewalls forming first and second angles with the waveguide's propagation direction. The second sidewall may include a reflective surface formed thereon. The photodetector may be configured to receive an optical signal propagated in the waveguide, through the first sidewall and reflected from the reflective surface on the second sidewall.

Abstract: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

Abstract: A monolithic photo-chip with a solar device and a light-emitting device that can be manufactured by utilizing a method of selective area growth (SAG) is provided, which has the advantages of simple structure, compactness and cost-effectiveness. Moreover, a solar-powered illuminator including the monolithic photo-chip and a rechargeable battery is provided, which has the advantages of small size, compactness, simple integration, easy installation and cost-effectiveness. Accordingly, the solar-powered illuminator is very suitable for versatile application fields, such as the LD application field including a laser pointer, a laser sight, a laser aiming device, a laser level and a laser measuring tool, etc; or the LED application field including a decoration lamp, a courtyard lamp, a garden lamp and a advertisement lamp, a streetlamp, a warning sign and a indication sign for the road application, etc.

Abstract: The present invention provides a laser diode realizing improved light detection precision. The laser diode includes a stack structure in which a first semiconductor layer of a first conduction type, an active layer, and a second semiconductor layer of a second conduction type are included in this order; a photodetection layer; and a plurality of light absorption layers provided on the corresponding position of antinodes or nodes of standing waves of light output from the active layer.

Abstract: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

Abstract: A submount of the present invention includes substrates made of a principal material of Si and impurity diffusion layers formed by diffusing an impurity into a region of a substrate surface above which a semiconductor laser chip is to be mounted. A TiW layer, an Au layer, a Pt layer and an AuSn layer are successively layered on the impurity diffusion layer. The thickness of the Pt layer is set so that the Pt layer remains in fusing the AuSn layer for bonding the semiconductor laser chip in accordance with the thickness of an Au electrode layer provided on the lower surface of the semiconductor laser chip, the thickness of the Au layer and the thickness and the composition ratio of the AuSn layer.

Abstract: A laser diode is disclosed. The laser diode generally has a support frame having a large-area coupling part and at least two pins on both ends, respectively, wherein one pin is integrally formed with the support frame. A laser diode chip and a photo-diode chip are attached to the large-area coupling part individually, and connected to other pins via two bonding wires, respectively. A transparent adhesive is formed on the photo-diode chip. The aforesaid components are integrated into a unity by a cover that has an opening on the top. Accordingly, the photo-diode chip can receive the laser light for utilizing the light feedback by an external circuit. Besides, the photo-diode chip and the laser diode chip are attached to the support frame directly so the laser diode offers good heat dissipation capability, extended lifetime, and increased reliability.

Abstract: An asymmetric twin waveguide (ATG) structure with an integrated amplifier and detector fabricated in a single active waveguide layer is disclosed. The structure comprises an active waveguide layer formed on a passive waveguide layer. The active and passive waveguides have different effective indices of refraction such that a first mode of light is confined primarily to the active waveguide and a second mode of light is confined primarily to the passive waveguide in the area where the waveguides overlap.

Abstract: To provide a surface light emitting element capable of maintaining characteristics of the surface light emitting element and accurately detecting emitted light. A surface light emitting element includes a light emitting element part, provided on a semiconductor substrate and emitting light perpendicular to the semiconductor substrate; a light detecting part, provided on the light emitting element part; a first electrode and a second electrode, which drives the light detecting part. The light detecting part includes a second contact layer; a light absorption layer, provided on the second contact layer; and a first contact layer provided on the light absorption layer. The first contact layer includes a first light passage part; and at least one electrode coupling part, extending from the first light passage part. The first electrode is provided on the first electrode coupling part of the first contact layer.

Abstract: An optical element comprising: a surface-emitting type semiconductor laser having an emission surface; and a photodetector element formed above the emission surface of the surface-emitting type semiconductor laser, wherein the photodetector element includes a semiconductor layer having a photoabsorption layer, the semiconductor layer having a film thickness d that satisfies a formula (1) as follows: (2m?1)?/4n?3?/16n<d<(2m?1)?/4n+3?/16n . . . , ??(1) where m is an integer, n is a refractive index of the semiconductor layer, and ? is a designed wavelength of the surface-emitting type semiconductor laser.

Abstract: A long wavelength vertical cavity surface emitting laser (VCSEL) with a monolithically-grown photodetector is provided. The photodetector is installed in a middle portion of or on a bottom surface of a lower distributed Bragg reflector of the long wavelength VCSEL. The photodetector is integrated with the long wavelength VCSEL. A substrate on which the long wavelength VCSEL and the photodetector are crystal-grown does not absorb a laser beam emitted from the long wavelength VCSEL. Thus, the laser beam heading toward the substrate is accurately detected, and the gain of the laser beam is effectively controlled.

Abstract: A method for manufacturing an optical device, the method includes the steps of: forming a multilayer film, including forming a first mirror above a substrate, forming an active layer above the first mirror, forming a second mirror above the active layer, forming a semiconductor layer on the second mirror, and forming a sacrificial layer on the semiconductor layer; conducting a reflection coefficient examination on the multilayer film; patterning the multilayer film to form a surface-emitting laser section having the first mirror, the active layer and the second mirror, and a diode section having the semiconductor layer; and removing at least a portion of the sacrificial layer to expose at least a portion of an upper surface of the semiconductor layer, wherein an optical film thickness of the semiconductor layer is formed to be an odd multiple or an even multiple of ?/4, where ? is a design wavelength of light emitted by the surface-emitting laser section, and an optical film thickness of the sacrificial layer

Abstract: To provide an optical element including a surface-emitting type semiconductor laser and an photodetector element, having a desired plurality of dielectric layers, and its manufacturing method.

Abstract: A high-power semiconductor laser chip 39 with a long cavity length is disposed on a side 42 of a Si chip 37 along the long side of a package, thereby reducing the thickness and size of a semiconductor device 30 for integrating the semiconductor laser chip 39 and a light-receiving element for signal processing. Further, by using the semiconductor device 30, it is possible to reduce the thickness and size of an optical pickup and the thickness and size of an optical disc drive using the optical pickup.

Abstract: A detector is disposed on the passive side of a laser to detect photon leakage through the passive side mirror and measure as current created in the detector via a Schottky contact.

Abstract: A semiconductor integrated circuit is provided having a surface-emitting laser that makes it possible to precisely monitor the amount of light emitted by the surface-emitting laser for a long period of time, to be miniaturized, and to be easily manufactured. A method to manufacture a semiconductor integrated circuit and electronic equipment is also provided. The semiconductor integrated circuit having a surface-emitting laser includes a transparent substrate, the surface-emitting laser composed of a micro tile-like element that is adhered to the transparent substrate, an integrated circuit chip that is flip-chip mounted on the transparent substrate and is arranged so as to cover the surface-emitting laser and a photodiode that is included in the integrated circuit chip and is arranged so as to face the surface-emitting laser.

Abstract: In a light source constructed from a plurality of laser diodes, the overall light output of the light source is controlled based on calibration data which is generated for each pair consisting of any one of the plurality of laser diodes and a dedicated control board for controlling the light output of the one laser diode, and which defines a correspondence between the control value for driving the control board and the value of the light output of the laser diode measured when the control board is driven based on the control value, and when replacing a designated one of the laser diodes in the light source, the designated laser diode and its dedicated control board are replaced together with the corresponding calibration data.

Abstract: The semiconductor laser unit includes: a metal plate having a center portion wider than the remaining portions; a flexible substrate having a first opening; a substrate mounted on the center portion; a semiconductor laser placed on the substrate; a frame having a second opening and fixing the flexible substrate in the state of being bent along from the top surface to both side faces of the metal plate; and an optical element covering the second opening. The flexible substrate is fixed so that the first opening extends over the top surface and both side faces of the center portion.

Abstract: Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting, device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.

Abstract: Optical transmission components, systems, and packages where the package includes a common housing containing a laser for transmission of an optical signal, a photodetector optically coupled to the laser for monitoring the laser transmission, and a laser driver electrically coupled to the laser for providing a drive current to the laser. The optical package may be a TO-Can package, the laser may be a vertical cavity surface emitting laser (“VCSEL”), and the laser driver may be an AC modulation laser driver, where a bias current is supplied to the laser from external to the optical transmission component package. An external bias source may be used for providing a bias current to the laser. A temperature sensor located in the laser driver may be used to control operational parameters of the laser.

Abstract: An active photonic device includes a semiconductor substrate, an optically active region formed on the semiconductor substrate, the optically active region including a first electrical contact for initiating emission of photons and/or modulation of photons within the optically active region, an optical confinement structure defining a principal optical path through the active photonic device and through the optically active region, and a photodetector structure formed on the semiconductor substrate. The photodetector includes a second electrical contact displaced from, and substantially electrically insulated from, the first electrical contact and overlying at least part of the principal optical path, the photodetector for receiving carriers generated by emitted photons.

Abstract: The invention relates to an optoelectronic arrangement having at least one optoelectronic emission component and a monitor component operatively coupled to the emission component to detect at least some radiation radiated by the emission component. A driver circuit of the arrangement is electrically connected to the emission component and the monitor component and a carrier substrate. In this case, the driver circuit is formed as a circuit integrated into the carrier substrate. The monitor component is likewise integrated into the carrier substrate and the emission component is formed as a separate structural part and is arranged on the carrier substrate.

Abstract: To provide an optical element including a surface-emitting type semiconductor laser and an photodetector element, which can be processed with a high accuracy, and its manufacturing method. An optical element in accordance with the present invention includes a surface-emitting type semiconductor laser including, above a substrate, a first mirror, an active layer and a second mirror disposed from the side of the substrate, and a photodetector element, provided above the surface-emitting type semiconductor laser, including a first contact layer, a photoabsorption layer and a second contact layer disposed from the side of the surface-emitting type semiconductor laser, wherein an isolation layer is provided between the second mirror and the first contact layer.

Abstract: A monolithic wavelength stabilized system comprises a laser monolithically formed with a waveguide splitter having at least two branches. Non-identical resonators having different wavelengths are operatively coupled to each branch of the splitter and a photodiode is communicatively coupled to receive the output from each non-identical resonator. A control unit receives the photocurrent outputs from the photodiodes, determines based on the photocurrents whether the wavelength of the laser signal is at a desired value, and transmits a feedback signal to the laser to move the laser output toward the desired wavelength. The laser, splitter, resonators, and photodiodes are monolithically formed in a single chip using asymmetric waveguides.

Abstract: The present invention provides a semiconductor optical device 1 that includes a photodiode capable of monitoring front light of the light-emitting device. The optical device 1 includes a photodiode 3, which is formed on a substrate 7 and has an absorption layer 9 and a semiconductor layer 11, and an optical waveguide 5 also formed on the substrate 7. The optical waveguide 5 includes, in addition to the active layer 13, two semiconductor layers 15 and 17. A portion of the light from the active layer 13 enters the photodiode 3 reflected by the end surface 5a of the waveguide 5 and the rest portion of the light passes through the end surface 5a and outputs therefrom. In the present invention, the photodiode 3 and the waveguide 5 are integrally formed on the substrate 7.

Abstract: Exemplary embodiments of the present invention include surface-emitting type semiconductor lasers including photodetector sections, which have a degree of freedom in designing its structure and are capable of high-speed driving. A surface-emitting type semiconductor laser in accordance with exemplary embodiments the present invention includes a light emitting element section, and a photodetector section that is provided above the light emitting element section and includes an emission surface. The light emitting element section includes a first mirror, an active layer provided above the first mirror, and a second mirror provided above the active layer. The second mirror is formed from a first region and a second region. The second region contacts the photodetector section, and the second region has a resistance greater than a resistance of the first region.

Abstract: A semiconductor laser device includes a one-body submount composed of a predetermined material such as SiC or AlN and placed on a mounting surface. A laser diode is placed on a front portion of an upper surface of the submount. A monitoring photodiode composed of crystalline silicon is stacked on a portion of the upper surface of the submount backward from the laser diode.

Abstract: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

Abstract: There is provided a semiconductor laser device containing a laser driver capable of implementing downsizing, thinning and cost reduction of equipment using the laser device. In the semiconductor laser device containing a laser driver, a semiconductor laser element, a laser driver for driving the laser element, and a signal detection part for performing photoelectric conversion are mounted on a common mount surface of a lead frame and moreover accommodated in a common package. Upward of the semiconductor laser element is provided a hologram element for transmitting laser light emitted by the laser element toward a recording medium and then diffracting toward the signal detection part the laser light reflected by the recording medium. The laser driver and the signal detection part are disposed on both sides with respect to an optical axis of the laser element.

Abstract: A monolithically formed laser and photodiode. The monolithically formed laser and photodiode includes a Vertical Cavity Surface Emitting Laser (VCSEL) that includes a first PN junction. The first PN junction includes a first p layer and a first n layer. A tunnel diode is connected to the VCSEL both physically and electronically through a wafer fabrication process. A photodiode is connected to the tunnel diode. The photodiode is connected to the tunnel diode by physical and electronic connections. The tunnel diode and photodiode may share some common layers. The tunnel diode includes a second PN junction. The monolithically formed laser and photodiode allow for an integrated structure with diode biasing flexibility including the use of a single supply to bias both the laser and photodiodes.

Abstract: Resonant cavity diode, operating at the same wavelength for emission and detection of light. This diode is particularly applicable to telecommunications and comprises a resonant cavity (12) delimited by two mirrors (8, 16) and containing an active medium (14) and at least two insulating and coaxial rings (24, 30, 32) with the same inside diameter and the same outside diameter, the total thickness of the rings being provided such that the optical length of the resonant cavity is k×? (k?2), in the part of this cavity that passes through the rings, and is (k?1)×? in the part containing these rings, where ? is the wavelength at which the diode is capable of emitting and detecting.

Abstract: A semiconductor electrooptic monolithic component comprising successively a first section capable of emitting light at a first wavelength and including a first active layer, a second section capable of absorbing light at the said first wavelength and including a second active layer, and a third section capable of detecting light at a second wavelength and including a third active layer. The component is characterized in that the second active layer is designed to ensure in the said second section an absorption higher than that which would be allowed by an active layer identical to the said first layer.

Abstract: Micro-optical elements (MOEs) are designed and fabricated onto transparent laser driver substrates to collimate or focus the beams from vertical-cavity surface-emitting lasers (VCSELs) in accordance with specific application requirements. One disclosed example teaches the hybrid integration of a top-emitting 850 mm VCSEL array and a transparent sapphire substrate that supports a monolithic MOE with designated optical functionality. A flip-chipping hybridization technique ensures a realistic and reliable process. The VCSEL beams transmit directly through the MOE structure on the transparent sapphire substrate and become well-controlled optical outputs under precise specifications. The optical power loss in such a beam shaping process is minimized compared to configurations based on conventional optical components.

Abstract: A vertical cavity surface emitting laser (VCSEL) module includes a substrate provided with an etched region formed on a lower surface thereof, a plurality of layers, for photoproduction, laminated on an upper surface of the substrate, and a VCSEL for emitting the light upwards and downwards, wherein the VCSEL module monitors the output of the VCSEL by detecting the light emitted downwards from the VCSEL.

Abstract: A monolithic integrated semiconductor optical element is disclosed. The semiconductor optical element including a substrate, a first waveguide, formed on the substrate, including a first active layer for generating light, and a semi-insulating, grown on the substrate so as to surround a perimeter of the first waveguide layer, including a window area for diffusing the light outputted from the first waveguide and outputting the diffused light. The semiconductor optical elements also includes at least one second waveguide, formed in the window area close to the first waveguide, including a second active layer for detecting a part of the light diffused by the window area.

Abstract: An optical transmitter includes an external cavity laser array formed in a PLC, a trench-based detector array and an AWG. The external cavity laser is formed using an array of substantially similar laser gain blocks and an array of gratings formed in waveguides connected to the gain blocks. Each grating defines the output wavelength for its corresponding external cavity laser. Each detector of the detector array includes a coupler to cause a portion of a corresponding laser output signal of the laser array to propagate through a first sidewall of a trench and reflect off a second sidewall of the trench to a photodetector. In one embodiment, the photodetector outputs a signal indicative of the power level of the reflected signal, which a controller uses to control the laser array to equalize the power of the laser output signals.

Abstract: An integral vertical cavity surface emitting laser (VCSEL) and power monitor assembly. The assembly is beneficially fabricated by anisotropically etching a silicon substrate having substantially flat top and bottom surfaces to form a cavity defined by an inwardly sloping wall that extends through the silicon substrate, beneficially to a membrane. A photodetector (light sensor) is formed adjacent the cavity (such as on a membrane), and a VCSEL is attached to the silicon substrate such that light from the VCSEL irradiates the photodetector. Beneficially, the photodetector is a metal-semiconductor-metal photodetector. An optical element (a lens) and the end of an optical fiber are beneficially located in the cavity. The optical element couples light that passes through the photodetector into the optical fiber.