Abstract: A method of producing mirrors comprising depositing a reflecting metal layer by pyrolysis on a ribbon of hot glass during the glass production process characterized by applying to the glass ribbon prior to deposition of the reflecting metal layer a primer for enhancing metal nucleation on the glass. The invention also provides a method of producing mirrors during the glass production process the method comprising pre-treating the surface of a ribbon of hot glass with an activating agent and pyrolytically depositing over the pre-treated surface a reflecting metal layer.

Abstract: A method and apparatus for minimizing excess aluminum deposition that can build up inside a substrate processing chamber during an aluminum CVD substrate processing operation. The method of the present invention periodically introduces nitrogen into the processing chamber after aluminum CVD processing of at least a single wafer in order to minimize unwanted aluminum accumulation in various parts of the chamber. According to one embodiment, the present invention provides a method of minimizing excess metal deposition inside a substrate processing chamber after a substrate processing operation. The method includes the steps of introducing a nitrogen-containing passivating gas into a chamber after the substrate processing operation, and maintaining at least a portion of the chamber at a second temperature during the introducing step thereby reducing excess metal build up within the chamber. In preferred embodiments, the method is performed after removal of the substrate from the processing chamber.

Abstract: A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate is placed within a vacuum deposition chamber, a small amount of hexamethyl-disilazane is added to the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit is completed to include at least a portion of the layered superlattice material film in a component of the integrated circuit.

Abstract: Novel organometallic complexes of aluminium, gallium and indium are disclosed, having improved stability and volatility for use in CVD processes. These are donor ligand complexes of the formula MR.sub.2 L where M is the metal, R is an alkyl group and L is a ligand containing an amidine (R'N. . . C(R'). . . NR') group, where R' is H, alkyl etc.

Abstract: A combustible gas sensor that uses a resistively heated, noble metal-coated, micromachined polycrystalline Si filament to calorimetrically detect the presence and concentration of combustible gases. A thin catalytic Pt film was deposited by CVD from the precursor Pt(acac).sub.2 onto microfilaments resistively heated to approximately 500 .degree. C.; Pt deposits only on the hot filament. The filaments tested to date are 2 .mu.m thick .times.10 .mu.m wide .times.100, 250, 500, or 1000 .mu.m-long polycrystalline Si; some are overcoated with a 0.25 .mu.m-thick protective CVD Si.sub.3 N.sub.4 layer.

Abstract: Ferrous powder particles are coated with vaporized phosphorus in a fluid-bed reactor to obtain homogeneous coatings of phosphorus. The coated powders are useful feed for pressed structural parts, exhibiting improved green density, compressibility and sintered density thus improving magnetic and tensile properties.

Abstract: A method is provided for coating a surface of an article with aluminum at a low temperature no greater than about 600.degree. F. and less than a selected temperature exposure above which adversely can affect article integrity. The method includes providing an aluminizing vapor, for example a vapor of an organo-metallic material, which can decompose to substantially pure Al in a low decomposition temperature range. At least the portion of the surface to be coated is heated to the decomposition temperature range and then exposed to the vapor which decomposes and deposits a layer of Al on the surface portion. The Al then is diffused into the portion at a temperature consistent with other heat treatment of the article and which will not affect adversely properties and conditions previously introduced and desired to be retained in the article.

Abstract: A nickel deposition includes a reactor system for producing nickel carbonyl and storing same as a liquid, a plating system where the liquid carbonyl is vaporized and applied to product and deposited thereon, with carbon monoxide being released in the process, a reclaim system for cooling the gases received from the plating system and cooling them to a temperature just above its freezing point to condense out and recover the liquid carbonyl, said reclaim system including a reclaim condenser, and a vapor recovery system including a gas receiver for receiving vapors from the reclaim system. The vapor recovery system includes a first stage compressor operatively connected to the first stage receiver for pressurizing the vapor to about 25 PSIG, and a first stage condenser operatively connected to the first stage compressor for cooling the vapors. A conduit communicates the vapor recovery system to the reactor system for forwarding the cooled vapors to a recycle pump receiver in the reactor system.

Abstract: This invention is directed to the creation of crystalline mullite coatings having uniform microstructure by chemical vapor deposition (CVD). The process comprises the steps of establishing a flow of reactants which will yield mullite in a CVD reactor, and depositing a crystalline coating from the reactant flow. The process will yield crystalline coatings which are dense and of uniform thickness.

Abstract: An embedded electroconductive layer is disclosed which comprises an opening part or a depressed part 3 formed in an insulating film 2 on a substrate 1, a barrier layer for covering the opening part or the depressed part, a metal growth promoting layer 5 on the barrier layer, and an electroconductive layer 6 embedded in the opening part or the depressed part via the barrier layer 4 and the metal growth promoting layer 5.

Abstract: A method for selectively protecting a component made of an iron-base alloy, cobalt-base alloy or nickel-base alloy with a protective arrangement which protects select areas of the component from aluminizing or chromizing during gas diffusion coating, wherein a first layer acts as an interlayer and a second layer acts as a getter layer for reaction gases. The method comprises the steps of depositing a first layer of slip cast material comprising oxide ceramic particles carried in a low-carbon, halide free, liquid vehicle; depositing a second layer comprising metal or a metallic slip, which comprises at least 50% by weight of the base metal of the component and all major alloy constituents of the component; aluminizing or chromizing by gas diffusion coating; and removing the protective arrangement from the component.

Abstract: A metalorganic chemical vapor deposition (MOCVD) method for depositing an F-series metal onto a semiconductor or other substrate or for incorporating nitrogen as a p-type dopant in Group II-VI semiconductor materials. The MOCVD method utilizes an F-series metal amide or zinc amide composition as the source compound for the F-series metal or nitrogen, respectively. Novel erbium amide and zinc amide compositions are disclosed along with methods for preparing the metal amide compositions.

Abstract: A method is provided for depositing ultra high purity of greater than 99.998% titanium films which comprises generating gaseous TiI.sub.4 in situ by reacting titanium metal starting material with gaseous iodide in a reaction chamber, purifying the TiI.sub.4 by a double distillation process at reduced pressure to produce ultra high purity of greater than 99.998% TiI.sub.4, transferring the ultra high purity TiI.sub.4 in liquid form to a deposition chamber to vaporize the liquid TiI.sub.4 and contacting a heated titanium substrate with the TiI.sub.4 vapor, thereby depositing the ultra high purity Ti films on the substrate.

Abstract: An article comprising a non-conductive substrate, preferably of an environmentally degradeable character, having a thickness of an oxidizable metal coating thereon, and optionally an oxidation enhancingly effective amount of a salt, e.g., from about 0.005 to about 25% by weight of salt, based on the weight of oxidizable metal, present on the oxidizable metal coating. Also disclosed is a related method of forming such article, comprising chemical vapor depositing the oxidizable metal coating on the substrate. When utilized in a form comprising fine-diameter substrate elements such as filaments, the resulting product may be usefully employed as an "evanescent" chaff. In the presence of atmospheric moisture, such evanescent chaff undergoes oxidization of the oxidizable metal coating so that the conductivity and radar absorbance/reflectance characteristics of the chaff transiently decays.

Abstract: A method of improving the oxidation resistance of a platinum modified aluminide coating formed on a nickel base superalloy substrate, comprises providing a platinum layer on the substrate, heating the substrate in a coating retort to a temperature of at least about 1000.degree. C., forming external of the coating retort a high purity coating gas comprising hydrogen and aluminum trichloride, and introducing the coating gas into the coating retort to contact the heated substrate to form an outwardly grown, single phase [(Ni,Pt)]Al] platinum modified aluminide coating having reduced concentration of at least one of a substrate substitutional alloying element and a surface active tramp element selected from at least one of B, P, and S in said coating as compared to a platinum modified aluminide coating formed at a lower temperature.

Abstract: A precursor liquid comprising barium and strontium 2-ethylhexanoates and titanium 2-methoxyethanol in a 2-methoxyethanol solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of barium strontium titanate on the substrate. Then an integrated circuit is completed to include at least a portion of the layered superlattice material film in a component of the integrated circuit.

Abstract: A method and apparatus for producing a nickel shell mold by nickel vapour deposition onto a mandrel in a deposition chamber is disclosed. A nickel shell mold assembly is produced having a liquid and vapour-tight cavity co-extensive with the mandrel for receiving a heating fluid, preferably a liquid such as oil, for flood heating of the mandrel to a uniform surface temperature.

Abstract: A method for the simultaneous deposition of chromium and silicon to form a diffusion coating on a workpiece uses a halide-activated cementation pack with a dual halide activator. Elemental metal powders may be employed with the dual activator. A two-step heating schedule prevents blocking a chromium carbide from forming at the surface of the workpiece. Small contents of either Ce or V can be added to the Cr+Si contents of the coating by introducing oxides of Ce or V into the filler of the pack.

Abstract: A method for producing a composite element by causing a stream of gaseous rhenium hexafluoride to flow onto a carbon substrate in a chemical vapor deposition reaction. A flow of hydrogen gas causes a reduction of the rhenium hexafluoride to rhenium metal to thereby deposit a uniform layer of rhenium metal onto the surface of the carbon substrate. A fine grain rhenium coating on carbon is produced having an average particle diameter of from about 0.1 to about 25 micrometers. The elements may be used alone or several of them may be bonded together into various articles. Such elements and articles are useful as light weight, high temperature strength, corrosive gas resistant structural elements.

Abstract: A silicon-enriched aluminide coating for a superalloy article has a composite microstructure including a plurality of bands of silicon rich phases (S.sub.1, S.sub.2, S.sub.3) and a plurality of bands of aluminum rich phases (A.sub.1, A.sub.2, A.sub.3), these bands being spaced apart through the thickness of the coating. The composite microstructure is created by depositing a slurry containing both silicon and aluminum in elemental or pre-alloyed form on the article and heating the coated article above the melting temperature of aluminum to cure the coating, the depositing and curing steps being repeated at least once before diffusion heat treating the resulting layers. Thereupon, all the above process steps are repeated at least once.

Abstract: A chemical vapor deposition method for forming a deposited film on a substrate using a film-forming liquid raw material. The film-forming liquid is pulverized into liquid fine particles which are heated together with a gas to produce a film-forming raw material gas. The film-forming raw material gas is introduced into a reaction chamber where it chemically reacts with a surface of a substrate which is present in the reaction chamber.

Abstract: A method for forming an interconnect comprises the steps of first covering an overall surface including a surface of a contact hole or a via-hole with a film of one of refractory metal and refractory metal compound and then depositing on the covered surface an aluminum film grown by a chemical vapor deposition (CVD) process using organic aluminum or trialkylamine-alane as a source material under a substrate temperature between 100.degree. C. and 180.degree. C. The organic aluminum is one of dimethylaluminum hydride, tri-isobutyl aluminum, trimethylamine-alane, and diethylaluminum hydride. The trialkylamine-alane is one of trimethylamine-alane and triethylamine-alane. Such aluminum film has good step-coverage so that, even when the diameter is small and the aspect ratio is high, the film can be deposited without an void being formed in the deposited film in the contact hole or the via-hole.

Abstract: A device for the formation, by pyrolysis, of a coating of metal or a metal compound on one face of a hot glass substrate which is in motion by bringing the face into contact with a gaseous reagent includes a roof; support device for conveying the hot glass substrate along a path through a coating chamber defined between the roof and the face of the hot glass substrate; at least one reagent gas inlet in the form of a slot opening directly into the coating chamber and extending transverse to the path of the hot glass substrate for supplying and distributing gaseous reagent to the coating chamber; and at least one exhaust gas outlet for discharging exhaust gas from the coating chamber.

Abstract: A method for the simultaneous deposition of chromium and silicon to form a diffusion coating on a workpiece uses a halide-activated cementation pack with a dual halide activator. Elemental metal powders may be employed with the dual activator. A two-step heating schedule prevents blocking a chromium carbide from forming at the surface of the workpiece. Small contents of either Ce or V can be added to the Cr+Si contents of the coating by introducing oxides of Ce or V into the filler of the pack.

Abstract: This invention provides a method of forming a deposition film serving as a high-quality wiring layer having good stress migration durability against any material such as a non-monocrystalline material. A substrate is located in a deposition film formation space, a gas of an alkylaluminum halide is supplied to the deposition film formation space, and an aluminum film is selectively formed on an electron donor surface at a partial pressure of the alkylaluminum halide of 7.times.10.sup.-3 Torr to 9.times.10.sup.-2 Torr in the range of a decomposition temperature or more of the alkylaluminum halide and 450.degree. C. or less. When deposition is to be performed on the non-monocrystalline material, a chemical treatment for terminating with hydrogen atoms a non-electron donor surface of a substrate having the electron donor surface and the non-electron donor surface is performed, and the deposition film is deposited by a non-selective deposition method.

Abstract: Process for producing novel coated nickel and/or cobalt superalloy bodies having increased resistance to oxidation, corrosion and thermal fatigue at high temperatures. The process comprises applying a thin layer of a platinum-group metal, siliciding and heating to an elevated temperature to diffuse and integrate the silicided platinum-group metal into the surface of the superalloy body. Then the superalloy body is exposed to a diffusion powder composition containing sources of aluminum or aluminum/chromium metals and heated in a hydrogen or inert gas atmosphere to an elevated temperature to codeposit and diffuse aluminum or aluminum and chromium into the silicided platinum-group metal-treated surface. Finally, the superalloy body is heated to its solvus temperature to form a ductile surface having an outer zone comprising a platinum-group metal aluminide, optionally ductilized by the solutioning therein of beta chromium.

Abstract: The invention relates to the use of boron-containing organic group-V compounds for the deposition of the elements of the Vth main group on substrates by gas-phase deposition.

Abstract: Process for producing novel nickel superalloy bodies having increased resistance of to oxidation and corrosion at high temperatures. The process comprises applying a thin layer of a platinum-group metal and heating to an elevated temperature to diffuse or integrate the platinum-group metal into the surface of the metal superalloy. Then the superalloy body is packed into a container filled with a diffusion powder composition containing sources of aluminum and chromium metals and heated in a hydrogen gas atmosphere to an elevated temperature to codeposit and diffuse aluminum and chromium into the platinum-group metal-treated surface. Finally, the superalloy body is removed from the diffusion coating container and heated to the solvus temperature to form a ductile surface having an outer zone microstructure comprising a normally brittle PtAl.sub.2 which has been ductilized by the solutioning therein of beta chromium. This ductilized PtAl.sub.

Abstract: This document discloses a method for bonding a calcium phosphate coating to stainless steels or cobalt base alloys for bioactive fixation of artificial implants. The method consists essentially of the following successive steps: applying and thermally diffusing a layer of titanium or its alloys into the stainless steel or cobalt base alloy substrates, applying a calcium phosphate coating and thermally diffusing Ca.sup.2+ and PO.sub.4.sup.-3 ions of the calcium phosphate into the intermediate layer of the titanium or its alloys and finally, the hydrothermal processing of the calcium phosphate coating.

Abstract: The present invention is a method for the simultaneous codeposition of copper and aluminum from volatile copper and aluminum precursors to form a layer on a substrate under chemical vapor phase conditions, such as the metallization of an aluminum/(0.25-4% copper) layer on a silicon semiconductor electronic device.

Abstract: A method and apparatus are disclosed for forming thin films of chemical compounds utilized in integrated circuits. The method includes steps of forming a precursor liquid comprising a chemical compound in a solvent, providing a substrate within a vacuum deposition chamber, producing a mist of the precursor liquid, and flowing the mist into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried to form a thin film of a solid material on the substrate, then the integrated circuit is completed to include at least a portion of the film of solid material in a component of the integrated circuit.

Abstract: A method for reducing the tendencies of small holes to become packed with particulate material during pack cooling. An organic substance is used to wholly or partially fill small holes prior to placing the part in the packed cooling material. The organic material decomposes during the packed cooling process.

Abstract: A method for producing a shadow mask not susceptible to doming which includes in the preferred embodiment the step of heating boron in a vacuum atmosphere of 5.times.10.sup.-5 Torr at 2500.degree.-2600.degree. C. for 12-20 sec to deposit a boron layer of 1 .mu.m on the surface of a shadow mask and introducing nitrogen gas for 12-20 sec with maintaining the vacuum level of 10.sup.-4 Torr to form a boron nitride layer of 2 .mu.m. Titanium is then deposited in a vacuum atmosphere of 5.times.10.sup.-5 Torr at 2400.degree.-2600.degree. C. for 25-35 sec to form a titanium layer of 1-2 .mu.m on the boron nitride layer. The boron nitride layer having low thermal expansion coefficient prevents deformation by doming and the titanium layer having the good conductivity enables the anode voltage to be applied to the shadow mask.

Abstract: A pack cementation method is described for producing conversion coatings on a ceramic. In particular, silicon carbide is coated with Cr.sub.2 O.sub.3 -forming compounds for improved sulfidation and ash-deposit resistance. The method is applicable to continuous fiber ceramic composites or a monolithic substrate. The conversion coatings are multilayered coating systems with the coating morphologies expressed as follows:Cr.sub.23 C.sub.6 /Cr.sub.7 C.sub.3 /Cr.sub.7 C.sub.3 -Cr.sub.3 Si/Cr.sub.5 Si.sub.3 C.sub.x /SubstrateCr/Cr.sub.3 Si/Cr.sub.5 Si.sub.3 C.sub.

Abstract: A method of applying a Cr-bearing layer to a substrate, comprises introducing an organometallic compound, in vapor or solid powder form entrained in a carrier gas to a plasma of an inductively coupled plasma torch or device to thermally decompose the organometallic compound and contacting the plasma and the substrate to be coated so as to deposit the Cr-bearing layer on the substrate. A metallic Cr, Cr alloy or Cr compound such as chromium oxide, nitride and carbide can be provided on the substrate. Typically, the organometallic compound is introduced to an inductively coupled plasma torch that is disposed in ambient air so to thermally decompose the organometallic compound in the plasma. The plasma is directed at the substrate to deposit the Cr-bearing layer or coating on the substrate.

Abstract: Chemical vapor deposition apparatus comprises a reactor having a chamber with a coating region for coating a substrate and an exhaust region communicating with the coating region. The coating region includes an inlet for introduction of a gaseous reactant stream to pass over the substrate to react therewith to form a coating thereon and a spent gas stream. The exhaust region includes an outlet for exhausting the spent gas stream from the coating region. The substrate is supported in the coating region and heated to an elevated reaction temperature by suitable support means and heating means. A condensing assembly is disposed in the exhaust region for condensing excess, unreacted gaseous reactant from the spent gas stream before entry into the outlet. The condensing assembly includes a high surface area, apertured structure disposed in the exhaust region where the temperature of the spent gas stream is sufficiently reduced to condense excess, unreacted gaseous reactant therefrom.

Abstract: A process for CVD including plasma enhanced and laser induced CVD using one or more precursor film forming metal compounds as the major film forming metal precursor, for example organotungsten, which is admixed with minor amounts of a precursor catalytic metal compound, for example, an organoplatinum compound, as a precursor to a catalytic metal in the presence of hydrogen gas to provide improved purity of deposited metal films having residual amounts of the catalytic metal incorporated therein.

Abstract: A process for depositing metal-containing layers which have a high specific electrical conductivity, involving the decomposition of organometallic compounds in a hydrogen-containing gas or vapor phase by means of a plasma. The energy density of the plasma is optimized, which involves recording an OES spectrum. It is thus possible to produce, e.g., strongly adhering conductor tracks whose width is less than 50 .mu.m and whose ratio of height to width is greater than 1. Also disclosed are a method for optimizing the deposition of metal-containing layers having a high specific conductivity, and a composite body produced by the process of the invention comprising a polymer substrate and a metal layer deposited thereon.

Abstract: Gold can be selectively deposited onto a catalytically-activated region on a surface of a workpiece in the presence of a catalytically-inactive region on the surface by a chemical vapor deposition method. The method involves placing the workpiece in a vacuum chamber and evacuating the vacuum chamber to a base pressure equal to or less than a catalyst-activity-preserving upper pressure limit to eliminate effectively gaseous catalyst-deactivating contaminants from the chamber. The surface composition of at least one region of a target surface of the workpiece is altered to produce a catalytically-activated region on the target surface. At least one region of the target surface disjoint from the catalytically-activated region is a catalytically-inactive region. A gaseous alkylated (trialkylphosphine)gold compound is introduced into the vacuum chamber to expose the target surface of the workpiece to the compound.

Abstract: In a method for forming a patterned layer by the selective CVD, the material gas for forming a patterned layer is introduced into a CVD chamber in which a semiconductor substrate is set, and then the CVD process is carried out at a predetermined temperature of the substrate while a light having a predetermined wavelength is irradiated selectively through a mask having a predetermined pattern on the substrate. The CVD layer grows on the area of the surface of the substrate where the light is not irradiated, however, the CVD growth is hindered on the area where the light is irradiated, by the presence of a thin layer which prevent the CVD growth, for example.

Abstract: By providing a deposited film formation method in which aluminum or a metal composed mainly of aluminum of good quality is selectively deposited according to the CVD method utilizing an alkyl aluminum hydride and hydrogen, and then pure aluminum or a metal composed mainly of aluminum is non-selectively deposited, it becomes possible to form an electroconductive film of good quality within fine openings or on an insulating layer.

Abstract: An integral process is provided for depositing onto, and etching a layer of copper from, a multi-layer structure. The subject process, which is conducted within a vacuum chamber, comprises providing a multi-layer having at least one major surface in which contact/vias are located. Next, a copper precursor is deposited onto at least one major surface of the multi-layer structure and into the contact/vias. The substrate temperature of the multi-layer structure in the vacuum chamber is maintained above the decomposition temperature of the copper precursor during the deposition thereof. In the etching phase of the integral process, an protective etch mask is provided on the major surface. Then, the substrate temperature of the multi-layer structure is lowered in the vacuum chamber below the decomposition temperature of the deposited copper precursor. Etching of the deposited copper film is then conducted employing an etchant material comprising the decomposition product of the copper precursor.

Abstract: A process and apparatus for the use of liquid-source bubbler/delivery systems for the delivery of solid source precursors employed in the growth of advanced technical materials such as the deposition of copper films in microelectronic devices.

Abstract: A method of cleaning a metal surface includes covering the portion of the metal surface with a cleaning tape. The cleaning tape is chromium in combination with a fluoride ion source bound together by fibrillated polytetrafluoroethylene. This is applied to the portion of the area to be cleaned and is subject to heat treatment at about 1800.degree. F. and a reducing atmosphere of preferably hydrogen. This effectively cleans only the area covered by the tape. Further, the tape and binder format acts to force fluoride ions into the cracks on the surface providing a significantly improved cleaning operation.

Abstract: A method is provided for forming films comprising Fe, Ru or Os employing the techniques of chemical vapor deposition to decompose a vapor comprising an organometallic compound of the formula (a): (CO).sub.4 ML or (b): M.sub.2 [.mu.-.eta.:.eta..sup.4 -C.sub.4 ](CO).sub.6 ; wherein L is a two-electron donor ligand and each R is H, halo, OH, alkyl, perfluoroalkyl or aryl; so as to deposit a coating comprising one or more of said metals on the surface of a substrate.

Abstract: The new compound diisopropyl stibine is prepared by reacting an diisopropyl antimony halide with a hydride or deuteride transferring agent. The reaction is preferably carried out below about 0.degree. C., in an inert atmosphere, under darkened conditions. The diisopropyl stibine is used as a precursor in forming antimony-containing semiconductor material by chemical vapor deposition.

Abstract: Apparatus and method for simultaneously coating interior and exterior surfaces of articles, such as advanced turbine airfoils, the interior surfaces defined by narrow, complex passageways. The apparatus and method, in addition to providing for simultaneous coating of interior and exterior surfaces, also permits additional control over the coating process by permitting control over the partial pressure of reactive gas introduced into the reaction chamber. The apparatus also permits for subsequent thermal treatment of the coated parts in an inert gas atmosphere with no intermediate cooling step thereby reducing costs while eliminating the potential for damage due to handling by the elimination of at least one handling operation.

Abstract: An aqueous slurry process for producing a diffusion aluminide protective coating in superalloy articles, particularly on internal passages in superalloy articles.Aqueous slurry containing a source of aluminum in particulate form, an inert ceramic particulate, a halide activator compound in particulate form and a viscous aqueous base dispersant is injected into the internal passage or otherwise coated on the internal surface to be protected. The coated article is heated to dry the slurry and remove the aqueous solvent base. The dried, coated article is diffusion heat treated between about 1,350.degree. F. and 2,250.degree. F. for a period of time between approximately 4 hours and 24 hours to transfer the aluminum to the surfaces of the passages and diffuse the aluminum into the substrate material to form the protective coating.

Abstract: A process for forming a deposition film comprising aluminum comprises the steps of: treating chemically a surface of a substrate having an electron-donative surface and a non-electron-donative surface so as to terminate the electron-donative surface with hydrogen atoms, and thereafter placing the substrate in a space for deposition film formation; introducing gas comprising alkylaluminum hydride and hydrogen gas into the space for deposition film formation; and forming an aluminum film selectively on the electron-donative surface by maintaining the substrate at a temperature in the range of from not lower than the decomposition temperature of the alkylaluminum hydride to not higher than 450.degree. C.

Abstract: A process for producing a lightweight electrode grid by exposing a compred, heated mat of dense graphite fibers to Ni(CO).sub.4 gas wherein the Ni(CO).sub.4 decomposes upon contact with the graphite fibers depositing a nickel metal coating on the graphite fibers which strongly bonds the fibers together to form a compressed mat or grid of nickel metal coated fibers.