Abstract: An article is coasted by preparing a coating source having an aluminum halide, a fluoride or an iodide of a modifying element as a source of the modifying element, and a carrier gas. The modifying element is zirconium, hafnium, and yttrium, or combinations thereof. The coating source is contacted to the article, and the coating source and the article are heated to a coating temperature of at least about 1850° F. for a period of time sufficient to permit aluminum and the modifying element to coat onto the surface of the article. The preferred fluorides of modifying elements are zirconium tetrafluoride and hafnium tetrafluoride.

Abstract: A gas turbine blade to be protected by an aluminide coating is placed within a masking enclosure including an airfoil enclosure that prevents deposition on the airfoil of the gas turbine blade, and a dovetail enclosure that prevents deposition on the dovetail of the gas turbine blade. The assembly is vapor phase aluminided such that aluminum is deposited on an exposed portion of the gas turbine blade that is not within the masking enclosure.

Abstract: A coated superalloy article is prepared by furnishing a nickel-base superalloy article substrate having a rhenium content of not less than about 4.0 percent by weight, and thereafter depositing an aluminum-containing coating onto a surface of the article substrate. The aluminum-containing coating includes an additive zone having an average aluminum content of not greater than about 27 percent by weight, and a diffusion zone of interdiffusion with the article substrate. A ratio of a thickness of the additive zone to a thickness of the diffusion zone is not greater than about 3:1, and is preferably about 1:1.

Abstract: A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium precursor compound and a solvent capable of solubilizing the ruthenium precursor compound. A method is further provided for making a vaporized ruthenium precursor for use in the chemical vapor deposition of ruthenium and ruthenium-containing materials onto substrates, wherein a ruthenium precursor formulation having a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound is vaporized.

Abstract: A method for depositing a film on a substrate is provided. In one aspect, the method includes providing a metal-containing precursor to an activation zone, and activating the metal-containing precursor to form an activated precursor. The activated precursor gas is transported to a reaction chamber, and a film is deposited on the substrate using a cyclical deposition process, wherein the activated precursor gas and a reducing gas are alternately adsorbed on the substrate. Also provided is a method of depositing a film on a substrate using an activated reducing gas.

Abstract: The present invention relates to novel 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an Atomic Layer Deposition process.

Abstract: A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the surface of the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, and mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.

Abstract: A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.

Abstract: A method of growing a thin film onto a substrate. A precursor of the film is fed into a reaction space in the form of a vapor phase pulse causing the precursor to adsorb onto the surface of the substrate to form a layer thereof. A catalyst is susequently fed into the reaction space in an amount to substantially convert the layer of the precursor to the desired thin film. The above steps may be repeated to achieve the desired film thickness.

Abstract: Organometallic compounds suitable for use as vapor phase deposition precursors for Group IV metal-containing films are provided. Methods of depositing Group IV metal-containing films using certain organometallic precursors are also provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.

Abstract: A method and apparatus for delivering precursors to a chemical vapor deposition or atomic layer deposition chamber is provided. The apparatus includes a temperature-controlled vessel containing a precursor. An energy source is used to vaporize the precursor at its surface such that substantially no thermal decomposition of the remaining precursor occurs. The energy source may include a carrier gas, a radio frequency coupling device, or an infrared irradiation source. After the precursor is exposed to the energy source, the vaporized portion of the precursor is transported via a temperature-controlled conduit to a chemical vapor deposition or atomic deposition chamber for further processing.

Abstract: A method includes coating a product with a metallic coating, in particular a high-temperature component product of a gas turbine, in a vacuum plant. An apparatus coats the product with a metallic coating in a vacuum plant, having a coating chamber and a postheat treatment chamber. Novel process control with regard to a temperature profile, in particular after the application of the metallic coating to the product and before the postheat treatment, involves the ensuring of a minimum temperature at all times, this minimum temperature being relatively higher than room temperature.

Abstract: Chemical vapor deposition apparatus and method are provided with external metal halide gas generators that reduce leakage of air into the generators so as to improve efficiency of use of the metal charge residing in each generator.

Abstract: An object of the present invention is to provide a liquid material for chemical vapor deposition (CVD), a method of forming a film by CVD and a CVD apparatus, capable of achieving film formation of a silicate compound of good quality. A liquid material for CVD includes an organometallic compound, a siloxane compound and an organic solvent for dissolving the organometallic compound and the siloxane compound. If the organometallic compound includes an alcoxyl group (e.g., tertialy-butoxyl group) having a larger number of carbon atoms than a propoxyl group or a &bgr;-diketone group (e.g., 2,2,6,6-tetramethyl-3,5-heptanedionate group), the stability in film formation is improved. As the organic solvent, diethyl ether, tetrahydrofuran, nor-octane, iso-octane and the like may be employed. As the siloxane compound, tri-metoxy-silane having a high degree of solubility in a nonsolar solvent and hexa-methyl-di-siloxane and octa-methyl-cycro-tetra-siloxane both having solubility in a polar solvent may be employed.

Abstract: This invention concerns a method for modifying a source material used in an ALD process, a method for depositing transition metal nitride thin films by an ALD process and apparatus for use in such process. According to the present invention transition metal source materials are reduced by vaporizing a metal source material, conducting the vaporized metal source material, into a reducing zone comprising a solid reducing agent maintained at an elevated temperature. Thereafter, the metal source material is contacted with the solid or liquid reducing agent in order to convert the source material into a reduced metal compound and reaction byproducts having a sufficiently high vapor pressure for transporting in gaseous form.

Abstract: A method for chemical vapor deposition of copper metal thin film on a substrate includes heating a substrate onto which the copper metal thin film is to be deposited in a chemical vapor deposition chamber; vaporizing a precursor containing the copper metal, wherein the precursor is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene; introducing the vaporized precursor into the chemical vapor deposition chamber adjacent the heated substrate; and condensing the vaporized precursor onto the substrate thereby depositing copper metal onto the substrate. A copper metal precursor for use in the chemical vapor deposition of a copper metal thin film is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene taken from the group of alkenes consisting of 1-pentene, 1-hexene and trimethylvinylsilane.

Abstract: A method of depositing a platinum based metal film by CVD deposition includes bubbling a non-reactive gas over an organic platinum based metal precursor until the non-reactive gas is saturated with the precursor. The platinum based metal film is deposited onto a substrate in a CVD deposition chamber in the presence of both oxygen and nitrous oxide at a predetermined temperature and under a predetermined pressure. The resulting film is consistently smooth and has good step coverage.

Abstract: The present invention provides a method and precursor for forming a metal and/or metal nitride layer on the substrate by chemical vapor deposition. The organometallic precursor has the formula of (Cp(R)n)xMHy−x, where Cp is a cyclopentadienyl functional group, R is a substituent on the cyclopentadienyl functional group comprising an organic group having at least one carbon-silicon bond, n is an integer from 0 to 5, x is an integer from 1 to 4, M is a metal, and y is the valence of the metal M. A metal, metal nitride, metal carbon nitride, or metal silicon nitride film is deposited on a heated substrate by thermal or plasma enhanced decomposition of the organometallic precursor in the presence of a processing gas, such as hydrogen, nitrogen, ammonia, silane, and combinations thereof, at a pressure of less than about 20 Torr. By controlling the reactive gas composition either metal or metal nitride films may be deposited.

Abstract: A method to redistribute solid copper deposited by PVD on a wafer topography. The deposited copper is solubilized in a fluid for redistribution. The copper redistribution prevents inherent nonuniformity of the deposited copper film thickness by improving the uniformity of thickness of the copper film on the covered surfaces, such as vertical and bottom surfaces. The method provides the advantages of good adhesion and good grain growth and orientation that are achieved with copper deposited by PVD, and also provides the good step coverage as achieved with copper deposited by CVD.

Abstract: In a method and a system for forming a copper thin film in which a raw material gas is introduced into a substrate processing chamber storing a substrate and being under a reduced pressure to form a copper thin film on the substrate, an addition gas is introduced into the substrate processing chamber in addition to the raw material gas at the initial stage of deposition. Thereafter, the introduction of the addition gas is stopped, while the introduction of the raw material gas is continued. Alternatively, an addition gas is introduced into the substrate processing chamber before the start of the deposition process, and the addition gas is introduced into the substrate processing chamber in addition to the raw material gas at the initial stage of deposition. Thereafter, the introduction of the addition gas is stopped, while the introduction of the raw material gas is continued.

Abstract: A method of chemical vapor deposition (CVD) of copper films includes preparing a substrate, including forming structures thereon have a barrier metal exposed surface; placing the prepared substrate into a CVD chamber; heating the substrate to a temperature of between about 200° C. and 250° C.; introducing a water flow in a carrier gas for at least one minute; stopping the water flow; and starting the flow of copper precursor.

Abstract: A gas distributor suitable for introducing a carrier gas at the top of a coating container used to provide a metallic coating on articles. The gas distributor includes a gas inlet and a gas outlet head in communication with the gas inlet for receiving a flow of gas from the gas inlet. A plurality of gas outlets through which the gas flow exits as a gas stream are spaced along the peripheral surface of the gas outlet head. A plurality of gas deflectors, each proximate to one of the gas outlets, at least initially direct the gas stream exiting the gas outlet in at least a generally centripetal path. This gas distributor can be used in vapor coating apparatus having a coating container, at least one holder for each article to be coated positioned within the coating container and below the gas outlet head of the gas distributor and at least one holder for the source of the metallic coating positioned within the coating container and below the gas outlet head of the gas distributor.

Abstract: Disclosed are trialkylindium compounds containing two bulky alkyl groups that are liquids or easily liquefiable solids and have sufficient vapor pressure for use in vapor deposition processes, as well as methods of depositing indium containing films using such compounds.

Abstract: A method of forming a copper film on a substrate is described. The copper film is formed using a cyclical deposition technique by alternately adsorbing a copper-containing precursor and a reducing gas on a substrate. The copper film formation is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the copper film may be used as interconnect metallization.

Abstract: Methods for forming platinum-iridium films, particularly in the manufacture of a semiconductor device, and devices (e.g., capacitors, integrated circuit devices, and memory cells) containing such films.

Abstract: The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.

Abstract: An article such as a hollow gas turbine blade has an internal cavity therein with an inlet and outlet. The outlet has an outlet minimum transverse dimension of from about 0.009 inch to about 0.012 inch. An aluminiding source powder has a minimum particle size of greater than about 0.0015 inch and not greater than about 0.005 inch. The aluminiding source powder is a mixture of from about 5 to about 15 percent by weight of a metallic aluminum-containing powder and from about 85 to about 95 percent by weight of a ceramic powder. The aluminiding source powder is flowed into the internal cavity through the inlet, and the article is heated with the aluminiding source powder in the internal cavity to a temperature of from about 1750° F. to about 2000° F., and for a time of from about 2 hours to about 12 hours, to deposit an aluminum-containing coating on the internal surface of the internal cavity. The aluminiding source powder is thereafter removed from the internal cavity through the inlet.

Abstract: A noble method of forming thin films for producing semiconductor or flat panel display devices is disclosed. The method is a way of effectively forming thin films on a substrate even if reactants do not react readily in a time-divisional process gas supply sequence in a reactor by supplying reactant gases and a purge gas cyclically and sequentially in order to prevent gas-phase reactions between the reactant gases and also by generating plasma directly on a substrate synchronously with the process gas supply cycle. The method has advantages of effective thin film formation even if the reactant gases do not react readily, minimization of the purge gas supply time for reduction in process time, reduction of particle contamination during film formation process, as well as thin film formation at low temperatures.

Abstract: An article protected by a protective coating includes a substrate made of a first nickel-base superalloy substrate material that is susceptible to the formation of a secondary reaction zone when overlaid by a diffusion aluminide coating or an aluminide overlay coating. A protective coating including a deposited coating at the substrate surface. The deposited coating is a second nickel-base superalloy different from the first nickel-base superalloy and which does not produce a secondary reaction zone when interdiffused with the first nickel-base superalloy. In one version, the deposited coating has a nominal composition, in weight percent, of about 3.1 percent cobalt, about 7.6 percent chromium, about 7.8 percent aluminum, about 5.45 percent tantalum, about 3.85 percent tungsten, about 1.65 percent rhenium, about 0.02 percent carbon, about 0.016 percent hafnium, about 0.015 percent boron, about 0.5 percent silicon, balance nickel and incidental impurities.

Abstract: A process for preparing a cyclopentadienyl or indenyl ruthenium complex by treatment of a cyclopentadienyl or indenyl compound with ruthenium trichloride dihydrate and magnesium powder in an alkanol at 10° C. to −30° C. is described.

Abstract: Geldhart class C tungsten carbide particles are provided with a discontinuous coating of grain growth inhibitor. Further, the fine tungsten carbide coatings are preferably provided with a continuous coating of another discreet phase material, such as, for example, a continuous coating of cobalt. Compacts produced using such materials are particularly useful as WC—Co hardmetals wherein the compacts are extremely fine grained.

Abstract: A process for chemical vapor deposition includes depositing a film using a metal &bgr;-diketonate complex and an &agr;, &bgr;-unsaturated alcohol. The metal &bgr;-diketonate complex and the &agr;, &bgr;-unsaturated alcohol is contacted on the substrate at the same time, at different times or alternately.

Abstract: An article substrate is protected by a protective structure overlying a surface of the article substrate. The protective structure includes a protective coating that is formed by depositing a layer of iridium overlying the surface of the substrate, depositing a layer of aluminum overlying the layer of iridium, and heating the substrate, the layer of iridium, and the layer of aluminum to form an iridium-aluminum protective coating overlying the substrate. A ceramic thermal barrier coating may be applied over the protective coating.

Abstract: The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.

Abstract: A gas turbine airfoil has an external surface and an internal passage therethrough. The internal passage is selectively coated by providing a source of a flowable precursor coating material in contact with the internal passage of the airfoil, and providing a coating prevention structure overlying at least a portion of the external surface. The flowable precursor coating material is flowed from the source of the flowable precursor coating material and through the internal passage of the airfoil. The coating prevention structure prevents contact of the flowable precursor coating material with the external surface of the airfoil.

Abstract: Product having a layer which protects against corrosion, and process for producing a layer which protects against corrosion. The invention relates to a product (1), in particular a gas-turbine blade (1), having a metallic basic body (2) to which a protective layer (3, 4) for protecting against corrosion is bonded. The protective layer (3, 4) has an inner layer (3) of a first MCrAlY alloy and an outer layer (4) having a second MCrAlY alloy, which is bonded to the inner layer (3). The second MCrAlY alloy is predominantly in the &ggr;-phase. The invention also relates to a process for producing a protective layer (3, 4) in which the outer layer (4) is produced by re-melting a region of the inner layer (3) or by deposition of an MCrAlY alloy from a liquid phase.

Abstract: The present invention provides for a method to reduce the strength of the honeycomb of a jet turbine stator, increasing its machinability, with a resultant reduction in measured peak tooth temperature, while maintaining or even improving its high temperature capability, so as not to limit its operating environment. The air seal functionality is unaffected, and even improved in some instances. The machinability of the honeycomb is increased by using a light element diffused into the honeycomb ribbon to produce the effect of reducing its strength and ductility while maintaining the environmental resistance needed. The present invention also includes the stator honeycomb produced by the foregoing method.

Abstract: A deposition process including applying an inoculant to at least a portion of the surface of a metal component, and then forming an intermetallic layer at the inoculant surface, such as by exposing at least the coated surface portion to a deposition environment.

Abstract: A method of depositing by chemical vapor deposition a modified platinum aluminide diffusion coating onto a superalloy substrate comprising the steps of applying a layer of a platinum group metal to the superalloy substrate; passing an externally generated aluminum halide gas through an internal gas generator which is integral with a retort, the internal gas generator generating a modified halide gas; and co-depositing aluminum and modifier onto the superalloy substrate. In one form, the modified halide gas is hafnium chloride and the modifier is hafnium with the modified platinum aluminum bond coat comprising a single phase additive layer of platinum aluminide with at least about 0.5 percent hafnium by weight percent and about 1 to about 15 weight percent of hafnium in the boundary between a diffusion layer and the additive layer. The bond coat produced by this method is also claimed.

Abstract: An indium precursor composition having utility for incorporation of indium in a microelectronic device structure, e.g., as an indium-containing film on a device substrate by bubbler or liquid delivery MOCVD techniques, or as a dopant species incorporated in a device substrate by ion implantation techniques. The precursor composition includes a precursor of the formula R1R2InL wherein: R1 and R2 may be same or different and are independently selected from C6-C10 aryl, C6-C10 fluoroaryl, C6-C10 perfluoroaryl, C1-C6 alkyl, C1-C6 fluoroalkyl, or C1-C6 perfluoroalkyl; and L is &bgr;-diketonato or carboxylate. Indium-containing metal films may be formed on a substrate, such as indium-copper metallization, and shallow junction indium ion-implanted structures may be formed in integrated circuitry, using the precursors of the invention.

Abstract: A method of manufacturing a ceramic film includes a step of forming a ceramic film 30 by crystallizing a raw material body 20. The raw material body 20 contains different types of raw materials in a mixed state. The different types of raw materials differ from one another in at least one of a crystal growth condition and a crystal growth mechanism in the crystallization of the raw materials. According to this manufacturing method, a surface morphology of the ceramic film can be improved.

Abstract: A method for treating a portion of a metal component by diffusion alloying includes providing a container having at least one open end. The container has a width that is greater than the width of the portion of the metal component to be treated, a thickness that is greater than the thickness of the portion of the metal component to be treated, and a depth that is greater than the length of the portion of the metal component to be treated. According to the method, the portion of the metal component to be treated is placed in the container. A heat-activated alloying powder is placed in the container around the portion of the component to be treated in a layer that extends along the length of the portion of the component to be treated. A non-oxidizing powder is placed in the container adjacent to the alloying powder and around the metal component in a layer that extends to an open end of the container.

Abstract: A method for chemical vapor deposition of copper metal thin film on a substrate includes heating a substrate onto which the copper metal thin film is to be deposited in a chemical vapor deposition chamber; vaporizing a precursor containing the copper metal, wherein the precursor is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene; introducing the vaporized precursor into the chemical vapor deposition chamber adjacent the heated substrate; and condensing the vaporized precursor onto the substrate thereby depositing copper metal onto the substrate. A copper metal precursor for use in the chemical vapor deposition of a copper metal thin film is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene taken from the group of alkenes consisting of 1-pentene, 1-hexene and trimethylvinylsilane.

Abstract: Method for forming on a superalloy or other metallic substrate a platinum graded, outward single phase diffusion aluminide coating on a surface of the substrate by depositing a layer comprising Pt on the substrate and then gas phase aluminizing the substrate in a coating chamber having a solid source of aluminum (e.g. aluminum alloy particulates) disposed therein close enough to the surface of the substrate to form at an elevated substrate coating temperature a diffusion aluminide coating having an inner diffusion zone and outer additive single (Ni,Pt)Al phase layer having a concentration of platinum that is relatively higher at an outermost coating region than at an innermost coating region adjacent the diffusion zone.

Abstract: In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

Abstract: An anti-stick coating that inhibits the adhesion of contaminants that form deposits on the internal cooling passages of gas turbine engine components. The anti-stick coating is formed as an outer coating of the internal cooling passages, and preferably overlies an environmental coating such as a diffusion aluminide coating formed on the passage surfaces. The outer coating has a thickness of not greater than three micrometers, and is resistant to adhesion by dirt contaminants as a result of comprising at least one layer of tantala, titania, hafnia, niobium oxide, yttria, silica and/or alumina. The outer coating is preferably deposited directly on the environmental coating by chemical vapor deposition.

Abstract: Chain parts and other steel articles are provided with hard, wear-resistant carbide coatings by tumbling them in a heated retort with a particulate mix which includes a source of vanadium and/or niobium. The steel substrate comprises a steel having at least 0.2% carbon, preferably 0.7-1.2%. Where the chromium content of the steel is 4-12%, preferably 4-8%, the chemical deposition process includes drawing a small amount of chromium from the steel substrate into the vanadium or niobium carbide coating, where it is distributed substantially homogeneously, helping to provide adhesion strength to the coating.

Abstract: A fabrication process provides for achieving high adhesion of CVD copper thin films on metal nitride substrates, and in particular, on substrates having an outermost TaN layer. The method comprises introducing a certain amount of water vapor to the initial copper thin film deposition stage and reducing the amount of fluorine in the interface of the copper and metal nitride substrate. These two process steps result in a copper thin film having improved adhesion to metal nitride substrates, including TaN substrates.

Abstract: A method of forming a copper thin film by chemical vapor deposition, includes introducing a wafer into a chemical vapor deposition chamber; humidifying helium gas with water to form a wet helium gas for use as the atmosphere in the chemical vapor deposition chamber; depositing a copper seed layer at a wet helium flow rate of between about 5.0 sccm and 20.0 sccm during a wafer temperature rise from ambient temperature to between about 150° C. to 230° C.; and depositing a copper thin film layer at a wet helium flow rate of between about 0.2 sccm to 1.0 sccm and at a temperature of between about 150° C. to 230° C.

Abstract: A method of forming a highly adhesive copper thin film on a metal nitride substrate includes preparing a substrate having a metal nitride barrier layer formed on a portion thereof; heating the substrate in a chemical vapor deposition chamber to a temperature of between 160° C. to 250° C. for about one minute and simultaneously introducing a copper precursor into the reaction chamber at a very slow initial flow rate of between less than 0.1 ml/min, and simultaneously providing an initial high wet helium gas flow in the reaction chamber of greater than or equal to 5 sccm; reducing the wet helium gas flow in the reaction chamber to less than 5 sccm; and increasing the flow of copper precursor to between about 0.1 ml/min and 0.6 ml/min.