Abstract: An article is formed of a gas turbine component having a substrate, an internal passage through the substrate defining an internal surface of the substrate, and an internal protective layer overlying the internal surface of the substrate. The internal protective layer has a composition of aluminum, plus, in weight percent, on average from about 0.1 to about 5.0 percent of a modifying element selected from the group consisting of hafnium, yttrium, zirconium, chromium, and silicon, and combinations thereof, and elements found in the substrate.

Abstract: A method for providing a low carbon and/or low oxygen containing conductive material includes providing a substrate assembly having a surface and providing a stream of a precursor containing conductive material to a region proximate the surface of the substrate assembly where the conductive material is to be deposited. A stream of reaction gas is also provided to the region proximate the surface of the substrate assembly where the conductive material is to be deposited. The reaction gas is one of an oxygen or hydrogen containing gas. A focused beam is scanned over the surface of the substrate assembly in the presence of the stream of precursor containing conductive material and the stream of the reaction gas to deposit the conductive material on the surface. The stream of the precursor containing conductive material may include a stream of a precursor containing one of platinum, palladium, rhodium, ruthenium, chromium, silver, and iridium; preferably platinum.

Abstract: A ruthenium (Ru) film is formed on a substrate as part of a two-stage methodology. During the first stage, the Ru film is formed on the substrate in a manner in which the Ru nucleation rate is greater than the Ru growth rate. During the second stage, the Ru film is formed on the substrate in a manner in which the Ru growth rate is greater than the Ru nucleation rate.

Abstract: The present invention discloses at least one source metal that is embedded in at least one inert material to form a stand-alone structure and process thereof. It is preferred that the source metal is nickel or alloy thereof, and the inert material is at least one ceramic.

Abstract: A Cub(hfac) precursor with a substituted phenylethylene ligand has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, C1 to C6 phenyl, H and C1 to C6 alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be stable a low temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursor.

Abstract: An improved process for applying aluminide coatings to superalloy components used in gas turbine applications resulting in a more uniform coating with less hazardous waste by-products. The process involves the steps of placing the superalloy components into a retort with an aluminum-containing source, evacuating air from the retort and introducing an inert gas, heating the retort to a preselected temperature, while maintaining the preselected temperature purging the inert gas from the retort by introducing hydrogen gas, while maintaining the preselected temperature, pulsing, by reducing the retort pressure to a preselected pressure below atmospheric pressure, followed by introducing a halide-containing gas to react with the aluminum-containing source to create an aluminum-rich vapor that deposits aluminum on the components, then reintroducing hydrogen gas into the retort to purge the gases within the retort; and cooling the retort.

Abstract: Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate adducts of the formula M(&bgr;-diketonate)2(L)4 wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.

Abstract: A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Abstract: A process and apparatus for depositing thin films onto a substrate. The process comprises mounting a wafer onto a wafer chuck and pumping a cryogenic fluid through the chuck which cools the wafer chuck and the wafer to a temperature below about +20° C. A thin film is then deposited over the cooled wafer using a sputter deposition process while maintaining the temperature of the wafer chuck and the wafer below about +20° C. The preferred embodiment of the present invention includes the use of liquid nitrogen as the cryogenic fluid, and copper as the material to be deposited through the sputtering process. In addition, the preferred embodiment cools the wafer chuck and the wafer to a temperature of about −100° C. The apparatus includes the physical vapor deposition vessel, the wafer chuck, the source of material to be deposited, the wafer, and the cooling line which passes through the wafer chuck to carry the cooling fluid to the chuck.

Abstract: To provide Ru compounds which are in the form of a liquid at room temperature to be used in forming Ru and RuO2 films for electrodes in semiconductor devices by the CVD method and a process for producing these compounds. Because of being a liquid at room temperature and having a sufficient vapor ressure at about 100° C., bis(ethylcyclopentadienyl)ruthenium or bis(isopropylcyclopentadienyl)ruthenium can be quantitatively supplied via gas bubbling or with the use of a liquid mass flow controller as a feedstock in the CVD method and thermally decomposed on a substrate at 600° C. in a hydrogen atmosphere to give pure Ru films. These compounds can be obtained at a high yield by reacting respectively ruthenium trichloride hydrate and ethylcyclopentadiene or isopropylcyclopentadiene with a zinc powder in an alcohol solvent at −30 to 0° C.

Abstract: A process for forming an oxidation and corrosion resistant coating on selective surfaces of an airfoil providing a chamber having an external wall which receives a hollow sleeve for defining an internal space and an annular space between the external wall and sleeve. The airfoil to be coated is located within the internal space. An activator is provided in the internal space below the airfoil. The chemical coating composition is located in the annular space. The chamber is closed and heated to a desired temperature for a sufficient time to coat selective surfaces of the airfoil with the coated composition.

Abstract: In a gas phase coating process for coating turbines blades or housing parts, one or more workpieces to be coated are arranged in a container that is heated. Propellant is supplied to the container via a propellant pipe. A donor substance is arranged at the floor of the container together with an activator and forms a coating gas that is circulated pulse-like in the interior of the container by means for circulation, for example, a Venturi nozzle from which the propellant emerges.

Abstract: A method for diffusion coating workpieces of ferrous base metals such as carbon steel and cast iron includes the step of weighing and mixing the following components, in powdered form: Chromium 40-50 wt % Ferrochromium 25-37 wt % Tantalum Carbide 0.40-0.65 wt % Vanadium 0.35-0.70 wt % Ammonium Halide 4-5 wt % Aluminum Oxide Remainder The workpieces are preferably degreased and then placed in a container with the mixed components. The container is sealed and heated to a temperature of 1000°-1050° C. The workpieces and the composition are kept at that temperature for a predetermined period, on the order of forty-five minutes or longer, to permit a surface layer of desired thickness to form. The container is then cooled in a conventional cooling chamber and the workpieces are removed. The method produces coatings having good wear and corrosion resistance.

Abstract: A dielectric interlayer is formed over a semiconductor substrate comprising at least one active region. The exposed upper surface of the dielectric interlayer is treated with nitrogen to form a nitrided barrier layer thereon. At least one hydrogen-containing dielectric layer is formed over the dielectric interlayer having the nitrided barrier layer thereon. The nitrided barrier layer serves as a barrier to diffusion of hydrogen from the at least one hydrogen-containing dielectric layer into the dielectric interlayer, thereby preventing a decrease in hot carrier injection reliability.

Abstract: The return bend elbow fittings connecting adjacent tubes in a delayed coker furnace are improved by subjecting the interior surface of the fittings to a diffusion hardfacing process.

Abstract: A method of removing a diffusion aluminide coating on a component designed for use in a hostile environment, such as superalloy turbine, combustor and augmentor components of a gas turbine engine. The method selectively removes an aluminide coating by stripping aluminum from the coating without causing excessive attack, alloy depletion and gross thinning of the underlying superalloy substrate. Processing steps generally include contacting the coating with a mixture that contains a halogen-containing activator and a metallic powder containing an aluminide-forming metal constituent, such as by pack cementation-type process. The mixture is then heated to a temperature sufficient to vaporize the halogen-containing activator and for a duration sufficient to cause the halogen-containing activator to provide a transfer mechanism for the removal of aluminum from at least a portion of the diffusion aluminide coating, while the metallic powder absorbs the removed aluminum.

Abstract: A process for preparing a diffusion barrier on a semiconductor substrate which comprises: conducting remote plasma-enhanced metal organic chemical vapor deposition of a thin film of TiNx on said substrate using an organotitanium compound under a flow of H2 plasma, wherein x ranges from 0.1 to 1.5, provides a TiNx thin film having a low carbon content and low specific resistivity.

Abstract: A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.

Abstract: A chemical vapor deposition apparatus and a copper film formation method are disclosed. The chemical vapor deposition apparatus includes a process gas delivery unit including a first storing unit using a liquid deposition source, a delivery unit for transferring a liquid deposition source in the first storing unit to an evaporator, and an evaporator for vaporizing the liquid deposition source transferred from the delivery unit and supplying a process gas; and a reaction chamber for receiving the process gas from the process gas delivery unit and deposition a predetermined thin film on a wafer or substrate mounted therein.

Abstract: A platinum source reagent liquid solution, comprising:(i) at least one platinum source compound selected from the group consisting of compounds of the formulae:(A) RCpPt(IV)R'.sub.3 compounds, of the formula: ##STR1## wherein: R is selected from the group consisting of hydrogen, methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and each R' is independently selected from the group consisting of methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and(B) Pt(.beta.-diketonates).sub.2 of the formula: ##STR2## wherein: each R" is independently selected from the group consisting of methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, t-butyl, trifluoromethyl, perfluoroethyl, and perfluoro-n-propyl, and(ii) a solvent medium therefor.

Abstract: A metal hydride derivative wherein at least one hydrogen atom is replaced by deuterium (.sup.2.sub.1 H) or tritium (.sup.3.sub.1 H) isotope. The metal constituent of such metal hydride may be a Group III, IV or V metal or a transition metal, e.g., antimony, aluminum, gallium, tin, or germanium. The isotopically stabilized metal hydride derivatives of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing.

Abstract: The present invention relates generally to an improved process for providing complete via fill on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A CVD metal layer, such as CVD Al or CVD Cu, is then deposited onto the refractory layer at low temperatures to provide a conformal wetting layer for a PVD Cu. Next, a PVD Cu is deposited onto the previously formed CVD Cu layer at a temperature below that of the melting point temperature of the metal. The resulting CVD/PVD Cu layer is substantially void-free.

Abstract: A method for preparing thin films of noble metals upon porous substrate surfaces including utilizing plasma polymerization wherein the noble metals are derived from a monomer or comonomer precursor of the noble metal and with the precursor being disposed within a plasma glow zone to convert the precursor to its dissociated form, thereby allowing the substrate to receive a deposit of a substantially continuous noble metal film thereon. A wide variety of noble metals and their alloys may be treated in this fashion, including such noble metals as platinum, ruthenium, gold and certain alloys thereof.

Abstract: A metalorganic complex of the formula:MA.sub.Y Xwherein:M is a y-valent metal;A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MAY with X;y is an integer having a value of 2, 3 or 4;each of the A ligands may be the same or different; andX is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F.The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates and their sulfur and nitrogen analogs, .beta.-ketoesters and their sulfur and nitrogen analogs, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases.

Abstract: An apparatus for supplying a low vapor pressure liquid material for deposition to a deposition chamber in which the low vapor pressure liquid material is pushed out of a pressurization passage by a pressure gas to a pressure liquid supply passage; a flow rate of the low vapor pressure liquid material is controlled by a flow rate control unit, and the flow rate of the low vapor pressure liquid is supplied to an evaporator and evaporated into vapor there; and the vapor is fed to the deposition chamber through a vapor feed passage provided with heating means for preventing the vapor from re-liquefying, whereby the liquid material for deposition is supplied stably and accurately.

Abstract: A process for producing conformal and stable TiN+Al films, which provides flexibility in selecting the chemical composition and layering. In this new process, porous TiCN is first deposited, and then Al is incorporated by exposing the porous film to CVD aluminum conditions at low temperatures.

Abstract: Copper films having improved properties are deposited by chemical vapor deposition from an organocopper precursor of a blend of copper hexafluoroacetylacetonate trimethylvinylsilane and from about 1.0 to 5.0 percent by weight of trimethylvinylsilane that is vaporized in a vaporizer, and passed into a chemical vapor deposition chamber. Separately up to about 2 percent by weight of the precursor blend of water vapor is added directly to the chamber.

Abstract: A liquid organocuprous compound of formula (I) of the present invention can be conveniently used in a low-temperature CVD process for the production of a contaminant-free copper film having good step-coverage and hole-filling properties: ##STR1## wherein: R.sup.1 represents a C.sub.3-8 cycloalkyl group, andR.sup.2 and R.sup.3 are each independently a perfluorinated C.sub.1-4 alkyl group.

Abstract: A method of applying chemical vapor deposition (CVD) copper (Cu) to integrated circuit substrates using a precursor with either a dimethoxymethylvinylsilane (dmomvs), or methoxydimethylvinylsilane (modmvs), silylolefin ligand bonded to (hfac)Cu is provided. The dmomvs ligand is able to provide the electrons of oxygen atoms from two methoxy groups to improve the bond between the ligand and the (hfac)Cu complex. The improved bond helps insure that the ligand separates from the (hfac)Cu complex at consistent temperatures when Cu is to be deposited. In situations where a precursor having a smaller molecular weight is desired, the modmvs ligand is used to provide electrons from the oxygen atom of the single methoxy group. In the preferred embodiment, water vapor is added to the volatile precursor to improve the conductivity of the deposited Cu.

Abstract: The present invention relates to a process and apparatus for the formation of conformal pure aluminum and doped aluminum coatings on a patterned substrate. It is directed to the use of low temperature thermal and plasma-promoted chemical vapor deposition techniques with biased substrate to provide conformal layers and bilayers comprised of pure Al and/or doped Al (e.g., Al with 0.5 at % copper) on semiconductor device substrates with patterned holes, vias, and trenches with aggressive aspect ratios (hole depth/hole width ratios). The use of the plasma-promoted CVD (PPCVD) process, which employs low plasma power densities, allows the growth of aluminum films with the smooth surface morphology and small grain size necessary for ULSI applications, while substrate bias provides superior coverage and complete aluminum fill of features intrinsic in microelectronic device manufacture.

Abstract: The present invention provides methods for the preparation of ruthenium metal films from liquid ruthenium complexes of the formula (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, fluorinated derivatives thereof, derivatives thereof additionally containing heteroatoms such as halide, Si, S, Se, P, As, N, or 0, or combinations thereof.

Abstract: A method is provided for forming a film of ruthenium or ruthenium oxide on the surface of a substrate by employing the techniques of chemical vapor deposition to decompose precursors of ruthenium having the formula: L.sub.y RuX.sub.z where L is a neutral or monoanionic ligand selected from the group consisting essentially of linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic alkenes, bicyclic dienes, bicyclic trienes, tricyclic alkenes, tricyclic dienes, tricyclic trienes; fluorinated derivatives thereof; derivatives thereof additionally containing heteroatoms such as a halide, Si, S, Se, P, As, N or O; and combinations thereof; where X is a pi-bonding ligand selected from the group consisting of CO, NO, CN, CS, nitriles, isonitriles, trialkylphosphines, trialkylphosphites, trialkylamines, and isocyanide, and where subscripts y and z have a value of from one (1) to three (3); or L.sub.1 Ru(CO).sub.

Abstract: A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum, and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, and deposited on a substrate. In one embodiement the substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit the precursor liquid on the substrate. In another embodiment, the precursor is spin-coated on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate.

Abstract: A closed loop, carbon monoxide self-contained preferably continuous process and apparatus for the production of nickel or nickel coated objects by nickel vapor deposition (NVD), comprising placing an object to be treated with nickel carbonyl in a deposition chamber; feeding a gaseous mixture of nickel carbonyl and carbon monoxide to the chamber; producing the nickel or nickel coated object and a nickel carbonyl-depleted gaseous mixture; removing nickel carbonyl from the nickel carbonyl-depleted gaseous mixture in a primary and subsequent secondary condensation unit and, preferably, a tertiary condensation unit to produce an essentially nickel carbonyl-free gas. The secondary and tertiary condensation units operably freeze out and subsequently thaw nickel carbonyl and most preferably each comprises a pair of units linked in parallel arrangement operative in alternating, alternate freeze-thaw modes. Carbon monoxide-containing gas is recycled to a nickel carbonyl reactor.

Abstract: The invention includes a low activity localized aluminide coating for a metallic article made by positioning a coating material, preferably in the form of a tape, on a portion of the article. The coating material comprises a binder, a halide activator, an aluminum source, and an inert ceramic material. The coating material and the article are heated in an inert atmosphere between about 1800.degree. F. (982.degree. C.) and about 2050.degree. F. (1121.degree. C.) for between about four and about seven hours thereby producing a low activity localized aluminide coating having an outward diffusion aluminide coating microstructure characterized by two distinct zones, an inner diffusion zone and an outer zone including between about 20-28 percent, by weight, aluminum.

Abstract: A process for recovering a 1,1,1,5,5,5-hexafluoro-2,4-pentanedione ligand from a metal-ligand complex byproduct such as Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2, comprising: providing a copper-ligand complex byproduct of Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2 in a process stream; cooling and condensing the copper-ligand complex byproduct of Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2 to separate it from the process stream; contacting the copper-ligand complex byproduct of Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2 with a protonation agent, such as: sulfuric acid, hydrochloric acid, hydroiodic acid, hydrobromic acid, trifluoroacetic acid, trifluoromethanesulfonic acid, acid ion exchange resin, hydrogen sulfide, water vapor and mixtures thereof; and recovering 1,1,1,5,5,5-hexafluoro-2,4-pentanedione.

Abstract: A method for producing a noble metal-containing structure on a substrate, and a semiconductor component having such a noble metal-containing structure, include introducing a noble metal into a preliminary structure by converting a gaseous compound of the noble metal with a non-noble metal in a preliminary structure into elementary noble metal and a gaseous compound of the non-noble metal. The process continues until a desired amount of the non-noble metal in the preliminary structure is replaced by the noble metal.

Abstract: A CVD precursor that is a precursor in film preparation by the CVD method, comprising a metalorganic compound containing a metal element constituting the film (called "main compound") having blended therewith another organic compound, the other organic compound having a lower vapor pressure than the main compound at a precursor vaporization temperature and when blended with the main compound forming a fusible blend having a lower melting point than the melting point of the main compound. In particular, when the main compound has the structural formula Ma(DPM).sub.2 (Ma being representing an alkaline earth metal), Ma(TMOD).sub.2 or Ma(TMND).sub.2 is blended therewith.

Abstract: Fabrication of an electroluminescent device having a high-quality luminescent layer is disclosed. The device emits intense blue light. A first electrode layer, a first dielectric layer, the luminescent layer, a second dielectric layer, and a second electrode layer are successively formed on a glass substrate. At least the exit side of the device is made from an optically transparent material. A first gaseous source material of a group II element belonging to group II of the periodic table, a second gaseous source material of a group VIB element belonging to group VIB, and a third gaseous source material of an element forming the luminescent center of the luminescent layer are supplied into a reaction furnace through first, second, and third gas supply tubes, respectively, and caused to react with each other. Thus, the luminescent layer is formed by chemical vapor deposition. The first material acts as a base material from which the luminescent layer is formed.

Abstract: A titanium/titanium nitride film stack can be formed with reduced amounts of impurity by depositing onto a substrate a film of titanium using plasma-enhanced chemical vapor deposition of titanium tetrachloride and hydrogen. This film is then subjected to a hydrogen/argon plasma which significantly reduces the chlorine content of the titanium film. The titanium film can then be subjected to an ammonia plasma which will form a thin layer of titanium nitride which is then coated with a thick layer of titanium nitride using plasma-enhanced chemical vapor deposition of titanium tetrachloride and ammonia. The hydrogen/argon anneal significantly reduces the chlorine content of the titanium film and thus the chlorine content at the titanium substrate interface, particularly when the substrate contains aluminum. This enhances the overall reliability of the formed product.

Abstract: Semiconductor devices are prepared by growth of epitaxial layers on a substrate from metalorganic compounds of the formula MR.sub.3, R being an alkyl group, or its amine adduct. The metalorganic compound was prepared by reacting a Grignard reagent with a metal halide in an amine solvent.

Abstract: The specification describes a composite TiN barrier layer structure formed by depositing a first TiN layer by CVD to obtain good step coverage, followed by a second TiN layer formed by PVD to obtain uniform surface morphology for subsequent deposition of an aluminum alloy contact layer. Alternatively, uniform TiN layer morphology is obtained by depositing multiple CVD TiN layers as a series of thin strata, and passivating after each deposition step to fully crystallize each stratum thereby obtaining a uniformly crystallized barrier layer.

Abstract: A liquid primer is misted, flowed into a deposition chamber and deposited on a substrate. A liquid precursor is then misted, flowed into a deposition chamber and deposited on the substrate. The primer and precursor are dried to form a solid thin film, which is then annealed to form a part of an electronic component in an integrated circuit, such as the dielectric in a memory cell. The primer is a solvent, and the precursor includes a metal carboxylate, a metal alkoxide, or a metal alkoxycarboxylate in a precursor solvent. Preferably, the primer and the precursor solvent are the same solvent, such as 2-methoxyethanol, xylenes, or n-butyl acetate.

Abstract: A method of diffusion coating a surface of an alloy product containing at least 5 wt. % iron with a chromium-silicon coating uses a dual activator containing a fluoride salt and a chloride salt, at least one of those salts particularly being ammonium chloride or another ammonium halide salt. The pack mix contain at least 20% chromium and a chromium to silicon ratio of at least 10 to 1. The workpiece is heated to at least 2050.degree. F. to obtain a coating of at least 10 mils which contains at least 30% chromium. Upon heating the ammonium salt will form a reducing environment containing molecular hydrogen. The presence of molecular hydrogen speeds up the chemical reactions by an additional reduction reaction to create the surface coating which enables the coating reactions to occur shorter hold times.

Abstract: A substrate is located within a deposition chamber, the substrate defining a substrate plane. A barrier plate is disposed in spaced relation above the substrate and substantially parallel thereto, the area of said barrier plate in a plane parallel to said substrate being substantially equal to said area of said substrate in said substrate plane, i.e. within 10% of said substrate area. The barrier plate has a smoothness tolerance of 5% of the average distance between said barrier plate and said substrate. A mist is generated, allowed to settle in a buffer chamber, filtered through a 1 micron filter, and flowed into the deposition chamber between the substrate and barrier plate to deposit a liquid layer on the substrate. The liquid is dried to form a thin film of solid material on the substrate, which is then incorporated into an electrical component of an integrated circuit.

Abstract: A CVD precursor that is a precursor in film preparation by the CVD method, comprising a metalorganic compound containing a metal element constituting the film (called "main compound") having blended therewith another organic compound, the other organic compound having a lower vapor pressure than the main compound at a precursor vaporization temperature and when blended with the main compound forming a fusible blend having a lower melting point than the melting point of the main compound. In particular, when the main compound has the structural formula Ma(DPM).sub.2 (Ma being representing an alkaline earth metal), Ma(TMOD).sub.2 or Ma(TMND).sub.2 is blended therewith.

Abstract: The present invention provides a composition and method for use in diffusion coating ceramic workpieces. In an especially preferred form, the composition comprises:Chromium 45-50 wt %Silicon Carbide 3.5-5.0 wt %Vanadium Boride 0.5-1.5 wt %Ammonium Halide 5.0-6.0 wt %Aluminum Oxide Remainder,the sum of all the components being 100 wt %. The components, in powdered form, are weighed and mixed in a container. The workpieces are placed in the container. The container is hermetically sealed and heated to a temperature of approximately 1000.degree. C. The workpieces and the composition are kept at approximately 1000.degree. C. for a predetermined period of time sufficient to permit a surface layer of desired thickness to form. The container is then cooled in a conventional cooling chamber down to approximately 300.degree.-350.degree. C. and air cooled to room temperature. The container is opened and the workpieces are removed.

Abstract: An improved process for chromizing commercial quantities of small, industrial, ferrous-based parts, such as but not limited to threaded connectors, pins, bolts, nuts, washers, fasteners, fittings, couplings, studs, etc., uses a retort filled with layers of parts coated with a chromium-containing slurry. The plurality of parts are arranged in layers on sheets of refractory felt paper and are heat treated simultaneously for causing the chromizing reaction between the slurry and the ferrous-based parts.

Abstract: The present invention offers processes for CVD (chemical vapor deposition) that enables one to use a new metallic organic compound as a raw material resource. The present invention involves the steps of: adding a metallic organic compound having a group capable of becoming free to a liquid of a compound having the same group as the group capable of becoming free of the metallic organic compound to prepare a solution; vaporizing the solution; decomposing the metallic organic compound; and depositing a metallic film on a substrate.

Abstract: The invention relates to the encapsulation of Geldhart class C substrate powders with a coating of metal, binder, or sintering aid. Encapsulation is achieved using chemical vapor deposition techniques in a recirculating fast-fluidized or turbulent fluidization flow bed reactor. Thin, smooth, generally uniform, fully encapsulating coatings are produced on the fine substrate particles. The coated Geldhart class C particles, and products made therefrom, exhibit excellent improved physical properties.