Abstract: An insulating layer (5) and a conductive seed layer (6) are applied to a substrate (1) in a simple process. A photo resist with palladium chloride are provided in a bath for electrophoretic deposition onto the substrate. The photo resist is an insulator and the palladium chloride is a catalyst. The layer is heated with UV to cure it. The layer is plasma etched to expose more of the palladium chloride, which acts as a catalyst for electrodes plating of the conductive seed layer. A thicker conductive layer (7) is then electroplated onto the seed layer. These steps may be repeated for successive insulating and/or conductive layers.

Abstract: Sputter targets comprising a target backing plate and a target deposit, are manufactured using electroless and electrolytic deposition of metal and metal alloys on a surface of the target backing plate. Portions of the target backing plate other than the surface can be protected from the deposition process. In addition, sputter targets comprising a target backing plate and a target deposit with complex combinations of materials are manufactured by simultaneous electroless deposition of a matrix metal and particulate material.

Abstract: The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve silicon-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce a silicon-to-metal interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a layer of a metal on a silicon or polysilicon surface of the substrate to form a metal silicide in an integrated system is provided.

Abstract: The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve metal-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce an improved metal-to-metal interface, more specifically copper-to-cobalt-alloy interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of a copper interconnect of the substrate in an integrated system to improve electromigration performance of the copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system.

Abstract: An apparatus and method for plating a workpiece. The apparatus comprises, generally, an anode, a cathode, and a selective anode shield/material flow assembly. In use, both the anode and the cathode are immersed in a solution, and the cathode is used to support the workpiece. During an electroplating process, the anode and the cathode generate an electric field emanating from the anode towards the cathode, to generate a corresponding current to deposit an electroplating material on the workpiece. The selective shield/material flow assembly is located between the anode and the cathode, and forms a multitude of adjustable openings. These opening have sizes that are adjustable during the electroplating process for selectively and controllably adjusting the amount of electric flux passing through the selective shield/material flow assembly and the distribution of the electroplating material on the workpiece. The selective shield/material flow assembly can also be used with an electroless plating system.

Abstract: A method for diffusing titanium and nitride into a base material having a coating thereon using conventional surface treatments or coatings. The method generally includes the steps of providing a base material having a coating thereon; providing a salt bath which includes sodium dioxide and a salt selected from the group consisting of sodium cyanate and potassium cyanate; dispersing metallic titanium formed by electrolysis of a titanium compound in the bath; heating the salt bath to a temperature ranging from about 430° C. to about 670° C.; and soaking the base material in the salt bath for a time of from about 10 minutes to about 24 hours. In accordance with another aspect of the present invention, titanium and nitride may be diffused into a base material without a coating. The treated base material may further be treated with conventional surface treatments or coatings.

Abstract: A flexible thin metal film system is made by directly depositing an electrically-conductive metal onto the metal surface of a self-metallized polymeric film.

Abstract: The non-cyanide electroless gold plating solution according to the invention is a non-cyanide electroless gold plating solution free from a cyanide compound, wherein bis-(3-sulfopropyl)disulfide is added, as a complexing agent for gold stabilization, to the electroless gold plating solution.

Abstract: An electroless gold plating solution that includes a solution- or water-soluble gold compound that provides gold ions, a complexing agent for the gold ions comprising a mixture of a sulfite and a thiosulfate in a weight ratio of greater than 1:2 to 50: 1, a reducing agent, and a benzoic acid compound having one to four hydroxyl group(s) or a solution- or water-soluble salt thereof in an amount sufficient to act as a stabilizer for the solution. Also disclosed are methods for electrolessly plating gold on a substrate or article.

Abstract: Electroless gold plating compositions that include an adhesion enhancer compound and a reduction accelerator are provided to obtain direct electroless gold plating over a gold, nickel or nickel alloy deposit. A method of electroless gold plating on a nickel-containing substrate is also disclosed.

Abstract: The method of the invention comprises accumulating experimental data or obtaining existing data with regard to the optimal time-temperature relationship of the deposition process on various film-formation stages for various materials, forming nuclei of a selected material on the surface of the treated object in the first stage under first temperature-controlled conditions for the formation of nuclei of said selected material, converting the nuclei of the aforementioned selected material into island-structured deposited layer of said material by causing lateral growth of the nuclei under second temperature-controlled conditions; converting the island-structure layer into a continuously interconnected cluster structure by causing further lateral growth of said island-structured deposited layer under third temperature-controlled conditions; forming a first continuous film of said material under fourth temperature controlled conditions which provides said first continuous film with predetermined properties; and t

Abstract: A process for forming a coating on a metal substrate includes contacting the substrate with a molybdate solution having a pH of between 3.5 and 5 inclusive containing an acid with the proviso that the acid is not nitric acid. The substrate is contacted with the solution at a temperature between 30 and 75 degrees Celsius and results in a yellow coating that is kinetically stable from 20 seconds to 300 seconds before the coating darkens to a final black coloration. Water washing of the yellow coating precludes further color development. The resulting yellow coating is amenable to overlayering with a seal coat.

Abstract: A method of selectively and electrolessly depositing a metal onto a substrate having a metallic microstructured surface is disclosed. The method includes forming a self-assembled monolayer on the metallic microstructured surface, exposing the self-assembled monolayer to an electroless plating solution including a soluble form of a deposit metal, and depositing electrolessly the deposit metal selectively on the metallic microstructured surface. Articles formed from this method are also disclosed.

Abstract: The invention concerns a method wherein the substrate (5) to be coated is immersed in an autocatalytic chemical deposit bath (4), for example nickel, contained in a stainless steel vessel (1) and wherein can be optionally mixed a suspended MCrAlY alloy, so as to form a metal deposit (nickel) wherein are optionally included powder particles. The invention is characterised in that, to provide a prolonged operation of the bath, it consists in measuring with a voltmeter (8) the difference of potential between the substrate (5) and a reference electrode (6) immersed in the bath (4), and in imposing between the substrate (5) and the vessel (1) an electric current produced by a generator (10), said current being adjusted by a regulator (11) so as to maintain said potential difference at a selected value.

Abstract: In a die for molding a honeycomb structure, in which a coating layer is formed on a die base so that slits with a particular width are provided, the slits are provided so as to have a width of 30 to 200 ?m by forming the coating layer by a substrate layer with a thickness of 10 to 100 ?m and a surface layer with a thickness of 1 to 30 ?m. Further, the substrate layer is formed by a metal layer containing no oxide. A thin-wall honeycomb structure with a wall thickness of 30 to 200 ?m can be formed, and moreover a die for molding a honeycomb structure, in which the coating layer is not damaged and thus the durability is high, and a manufacturing method thereof can be provided.

Abstract: A pre-treating method for plating a Fe—Mn—Al alloy surface includes the steps of: cleaning a Fe—Mn—Al alloy surface with ultrasonic energy; heat-degreasing the Fe—Mn—Al alloy surface with a basic solution for removing accumulated grease; deterging the Fe—Mn—Al alloy surface with an acid solution for eliminating corrosion produced in previous high temperature conditions; electrolyzing the Fe—Mn—Al alloy surface with a basic solution for removing an oxidative layer; and neutralizing the basic solution remained on the Fe—Mn—Al alloy surface with an acid solution; and plating the Fe—Mn—Al alloy surface with corrosion-resisting materials.

Abstract: A method for treating a hinge holder includes the following steps: polishing a surface of the hinge holder; degreasing the hinge holder; cleaning the hinge holder; baking the hinge holder; cooling the hinge holder; screen-printing a part of the surface of the hinge holder; and plating the other part of the surface of the hinge holder with chromium or a chromium-containing compound. The plated hinge holder has a layer of chromium or chromium nitride on the surface, which renders the surface of the hinge holder more attractive and more wear-resistant. Therefore, it is not as easily scratched during assembly and frequent use.

Abstract: Improved terminations, interconnection techniques, and inductive element features for multilayer electronic components are formed in accordance with disclosed plating techniques. Monolithic components are provided with plated terminations whereby the need for typical thick-film termination stripes is eliminated or greatly simplified. Such plated termination technology eliminates many typical termination problems and enables a higher number of terminations with finer pitch, which may be especially beneficial on smaller electronic components. The subject plated terminations are guided and anchored by exposed varying width internal electrode tabs and additional anchor tab portions. Such anchor tabs may be positioned internally or externally relative to a chip structure to nucleate additional metallized plating material. The combination of electrode tabs and anchor tabs may be exposed in respective arrangements to form generally discoidal portions of plated material.

Abstract: The subject invention includes a plating apparatus (10) having an electrically conductive rack (12) and a frame assembly (14). The frame assembly (14) includes a rod (24) and series of support structures (26). A number of removable (34) and fixed (32) bars are attached to the support structures (26) such that a strand of interconnected workpieces (18) are wrapped over the bars (32, 34) to define a revolution of the interconnected workpieces (18). The plating apparatus (10) and frame assembly (14) are characterized by a series of spacers (38) mounted along the removable bars (34) for separating adjacent revolutions of the interconnected workpieces (18) such that the workpieces (18) can be effectively coated with the material.

Abstract: A first metal is plated onto a substrate comprising a second metal by immersing the substrate into a bath comprising a compound of the first metal and an organic diluent. The second metal is more electropositive than the first metal. The organic diluent has a boiling point higher than a eutectic point in a phase diagram of the first and second metals. The bath is operated above the eutectic point but below the melting point of the second metal. For example, bismuth is immersion plated onto lead-free tin-based solder balls, and subsequently redistributed by fluxless reflow. Plated structures are also provided.

Abstract: An object of the invention is to prevent the color on a surface of a plated metal layer from changing. The invention is a wiring substrate obtained by forming a wiring conductor made of a metal having a high melting point on an insulator, and coating a surface of the wiring conductor with an electroless plated metal layer, wherein the electroless plated metal layer contains an element of Group 1B and is free from lead.

Abstract: The present invention provides a method to coat an article using a plating process, either electroless or electrolytic, whereby nickel is plated on the article using a solution that includes a suspension of powders or containing one or more of the following elements: Ni, Cr, Al, Zr, Hf, Ti, Ta, Si, Ca, Fe, Y and Ga. Optionally, the coating is then heat treated at a temperature above about 1600° F. for an effective amount of time to allow to homogenize the coating by allowing effective interdiffusion between the species. The level of aluminum may be altered to produce a coating of the predominantly ? phase of the NiAl alloy composition. Optionally, a TBC layer is applied over the predominantly ? phase NiAl alloy composition metallic bond coat.

Abstract: An object of the present invention is to provide an electroless displacement gold plating solution, an additive for use in preparing the plating solution, and a metal composite material obtained by treatment with the plating solution. The electroless displacement gold plating solution contains a water-soluble gold compound, a complexing agent, and a water-soluble silver compound, and optionally a water-soluble thallium compound, a water-soluble lead compound, a water-soluble copper compound or a water-soluble nickel compound, or any combination thereof. The plating solution has good stability and, even not only immediately after the preparation but also after a lapse of a certain time period from the preparation, can be used for production of a metal composite material exhibiting an even plated appearance and also having a thick gold coating film.

Abstract: Process for producing a metal layer on a substrate body. The process includes applying conductive particles to a surface of the substrate body, so that the conductive particles are fixed to the substrate body, and metallizing the substrate body together with the particles chemically and/or by electrodeposition in a metallization bath so as to form the metal layer.

Abstract: There is provided an electroless Ni—B plating liquid for forming, a Ni—B alloy film on at least part of the interconnects of an electronic device having an embedded interconnect structure, the electroless Ni—B plating liquid comprising nickel ions, a complexing agent for nickel ions, a reducing agent for nickel ions, and ammonums (NH4+). The electroless Ni—B plating liquid can lower the boron content of the resulting plated film without increasing the plating rate and form a Ni—B alloy film having an FCC crystalline structure.

Abstract: The invention relates to a supported platinum group metal catalyst obtainable by controlled electroless deposition of at least one platinum group metal from a deposition solution which comprises i) at least one homogeneously dissolved platinum group metal compound, ii) a reducing agent and iii) at least one control agent selected from isopolyacids and heteropolyacids of niobium, tantalum, molybdenum, tungsten and vanadium or their salts.

Abstract: A method for plating a titanium-containing metal, comprising the steps of: (a) surface treating the titanium-containing metal in a solution consisting essentially of an aqueous solvent and hydrochloric acid for a period of time sufficient to activate the surface of the titanium-containing metal; (b) plating the surface of the surface treated titanium-containing metal with a metallic coating in an electrolyte bath; and (c) non-oxidatively heat treating the plated titanium-containing metal for a period of time sufficient to cause diffusion bonding between the metallic coating and the titanium-containing metal. The present invention also provides parts made in accordance with the methods disclosed herein.

Abstract: A process and composition for manufacturing printed wiring boards that reduces or eliminates the problem of depositing electroless nickel in through holes that are not designed to be metal plated is provided. Also provided by the present invention is a method and composition for depositing a final finish that is even and bright. The present invention is particularly suitable for the manufacture of printed circuit boards containing one or more electroless nickel-immersion gold layers.

Abstract: A method for surface treating a titanium-containing metal, comprising the steps of: (a) treating at least a portion of a surface of the titanium-containing metal with an anodic activation in an electrolyte bath; and (b) strike plating at least a portion of the surface of the treated titanium-containing metal with a metallic coating in the same electrolyte bath as in step (a), wherein the titanium-containing metal remains submerged in the electrolyte bath during steps (a) and (b).

Abstract: Disclosed are methods of depositing electroless gold layers on a metal substrate using a catalytic palladium deposit. Such electroless gold layers have increased adhesion as compared to conventional electroless gold deposits.

Abstract: A method for enhancing the solderability of a metallic surface is disclosed where the metallic surface is plated with an immersion silver plate prior to soldering, which immersion silver plate is treated with an additive selected from the group consisting of fatty amines, fatty amides, quaternary salts, amphateric salts, resinous amines, resinous amides, fatty acids, resinous acids, ethoxylated derivatives of any of the foregoing, and mixtures of any of the foregoing. The immersion silver deposits created are resistant to electromigration.

Abstract: The present invention relates to compositions and a method for electroless formation of alkaline-metal-free coatings on the basis of cobalt and composition of cobalt with tungsten and phosphorus, which have high resistance to oxidation and stability of electrical characteristics, when the Co—Cu system layer is used in IC chips. The composition of the electroless solution contains more than one reducing agents, one of which can catalyze the initial electroless deposition layer of cobalt on copper (called initiator), while the other maintains deposition of cobalt on the aforementioned initial layer as the process is continued. Small amount (100-5000 ppm) of elements from the initiator also builds into the electroless film, which is expected to further improve the barrier properties of the resultant film compared to the deposition bath without initiator.

Abstract: The present invention is directed to an activator solution and method for activating a copper-seeded surface to facilitate plating of copper onto the copper-seeded surface. The activator solution is prepared by heating a precursor solution to a temperature of at least about 95° C., and maintaining the precursor solution at said temperature for at least about 30 minutes, wherein the precursor solution comprises water, chlorine ions, copper ions, tin (II) ions, and an antioxidant compound which substantially prevents the oxidation of the tin (II) ions to tin (IV) ions.

Abstract: Electroless copper plating solutions and methods of use thereof are disclosed. A representative electroless copper plating solution includes a reducing agent that is a source of hypophosphite ions and at least one accelerator compound that accelerates the rate of copper deposition.

Abstract: This process results in directed electroless plating of the metal to form discrete metal structures over the entire surface. Because the surface is pre-patterned with passivated regions inert to metal deposition, the metal is directed only to the unstamped regions. This allows the formation of unconnected metal structures without any chemical etching steps. These metallic arrays are varied in size, separation and shape by using gratings of different periodicities and blaze angles as the stamp templates. A variety of well-defined geometric patterns have been fabricated and imaged using scanning probe, scanning electron, and optical microscopies.

Abstract: Known methods of improving the solderability of copper surfaces on printed circuit boards present the disadvantage that outer layers of an irregular thickness are formed at the metal surfaces, that these layers are very expensive or that the constituents used in manufacturing them are harmful to the environment. Furthermore, the metal surfaces are to be suited to form bond connections as well as electrical contacts. To overcome these problems there are disclosed a bath and a method of electroless plating of silver by way of charge exchange reaction on surfaces of metals that are less noble than silver, more particularly on copper, that contain at least one silver halide complex and not containing any reducing agent for Ag+ ions.

Abstract: The method for electroless deposition of a coating material, which may be a metal, semiconductor, or dielectric, that is carried out at a relatively low temperature of the working solution compensated by an increased temperature on the substrate which is controlled by a heater built into the substrate chuck. A decrease in the temperature of the working solution prevents thermal decomposition of the solution and reduces formation of gas bubbles, normally generated at increased temperatures. Accumulation of bubbles on the surface of the substrate is further prevented due to upwardly-facing orientation of the treated surface of the substrate. The substrate holder is equipped with a substrate heater and a substrate cooler, that can be used alternatingly for quick heating or cooling of the substrate surface.

Abstract: Aqueous electroplating solutions and methods are provided for the codeposition of zinc and chromium. The solutions include effective amounts of zinc, chromium, and hydroxyl ions. The solutions further include an effective amount of one or more ions of alkali metals, alkaline earth metals, or a combination thereof other than sodium and potassium, to in major part balance the hydroxyl ions. A preferred alkali metal is rubidium.

Abstract: A method of forming a pattern on an article comprising applying a carrier material to a substrate to provide the pattern, the carrier material carrying a seeding substance to allow application of a metallic material thereto, moulding the substrate to form the article, and applying the metallic material to the seeding substance on the carrier material.

Abstract: A method for processing a substrate having a metal layer formed on a surface of the substrate is set forth. The method first preprocesses a surface of the metal layer, deposits a protective film selectively on a surface of the metal layer by an electroless plating process, cleans the substrate after depositing the protective film, and dries the substrate after cleaning. These processes are repeated a plurality of times to process a plurality of substrate. The deposition rate in the deposition process is 10˜600 Å/min, and a variance of deposition rate for the plurality of substrate is controlled within ±10%.

Abstract: Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.

Abstract: The invention provides a hydrogen permeable structure, which can effectively prevent peeling-off of a hydrogen permeable film and hence has higher durability, and a method of manufacturing the structure. The hydrogen permeable structure has a hydrogen permeable film formed on the surface of or inside a porous support, having a thickness of not more than 2 &mgr;m, and containing palladium (Pd). The hydrogen permeable film is formed on the surface of or inside the porous support by supplying a Pd-containing solution and a reducing feed material from opposite sides of the porous support.

Abstract: An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer.

Abstract: An active part of a sensor is formed, for example, by micro-machined silicon wafers bearing electronic elements, electrical conductors, connection pads, and pins. The pads are electrically connected to the pin ends by conductive elements. Then the wafer and the pin ends are plunged into an electrolytic bath to make an electrolytic deposit of conductive metal on the pin ends, the pads, and the conductive elements that connect them. Finally, this metal is oxidized or nitrized to form an insulating coat on the pin ends, the pads, and the conductive elements that connect them. Such a sensor may find particular application as a sensor designed to work in harsh environments.

Abstract: Disclosed are methods for depositing a copper seed layer on a substrate having a conductive layer. Such methods are particularly suitable for depositing a copper seed layer on a substrate having small apertures, and preferably very small apertures.

Abstract: The present invention is aimed to provide an electroless gold plating solution which requires less amount of a reducing agent, retains a sufficient deposition rate for a practical use, and has an excellent stability as a plating solution; and a method for carrying out an electroless gold plating. The present invention provides an electroless gold plating solution comprising a gold salt, a phenyl compound based reducing agent and a water-soluble amine and a method for plating using the gold plating solution.

Abstract: An electroless copper plating solution using glyoxylic acid as a reducing agent, which is small in the reacting quantity of Cannizzaro reaction, does not largely cause precipitation of the salt accumulated in the electroless copper plating solution by the plating reaction and Cannizzaro reaction, and can be used stably over a long period of time. The electroless copper plating solution comprises copper ion, a complexing agent for copper ion, a reducing agent for copper ion and a pH adjusting agent, wherein the reducing agent for copper ion is glyoxylic acid or a salt thereof, the pH adjusting agent is potassium hydroxide and the electroless copper plating solution contains at least one member selected from metasilicic acid, metasilicic acid salt, germanium dioxide, germanic acid salt, phosphoric acid, phosphoric acid salt, vanadic acid, vanadic acid salt, stannic acid and stannic acid salt in an amount of 0.0001 mol/L or more.

Abstract: The present invention provides a process for forming inlaid patterns of metal into specified areas of a patterned substrate. The process, which is useful in the manufacture of semiconductor devices and circuits, comprises selectively removing seed layer from all surfaces save the trenches and vias and selectively electroless plating a metal into the patterned substrate where the seed layer remains. The present invention further provides an abrasive-free polishing-pad configured to planarize a metal plated surface, agitate chemical reagents and facilitate removal of gases generated by the electroless plating process.

Abstract: There is provided a plating apparatus and method which can control the temperature of a plating solution during plating more uniformly and easily form a uniform plated film on the to-be-plated surface of a workpiece, and which can simplify the device and decrease the footprint. The plating apparatus includes: a plating bath of a double bath structure (18) including an inner bath (14) for holding a plating solution and carrying out plating, and an outer bath (26) which surrounds the inner bath (14) and is in fluid communication therewith; and a heating device (30) disposed in the outer bath (26). The plating apparatus may further include means (32) for circulating or stirring the plating solution (12) in the plating bath (18).

Abstract: Electroless plating solutions are disclosed for forming metal alloys, such as cobalt-tungsten alloys. In accordance with the present invention, the electroless plating solutions may be formulated so as not to contain any alkali metals. Further, the solutions can be formulated without the use of tetramethylammonium hydroxide. In a further embodiment, a plating solution can be formulated that does not require the use of a catalyst, such as a palladium catalyst prior to depositing the metal alloy on a substrate.