Metal Or Metal Alloy Plating Or Implanted Material Patents (Class 427/531)
  • Patent number: 4898806
    Abstract: A coated photosensitive material on a support comprising a layer of polyamic acids and polyamic acid aryl esters derived from tetracarboxylic acids or aminodicarboxylic acids containing a benzophenone structural unit and aromatic diamines which are substituted in both ortho-positions by at least one amino group. The material is autophotocrosslinkable and is suitable for producing protective coatings and photographic images, with corresponding polyimides being formed after irradiation by a thermal aftertreatment.
    Type: Grant
    Filed: January 23, 1989
    Date of Patent: February 6, 1990
    Assignee: Ciba-Geigy Corporation
    Inventor: Josef Pfeifer
  • Patent number: 4898748
    Abstract: A method for enhancing a chemical reaction is provided by forming a plasma that includes at least one multiatomic reactant, flowing the plasma into a reaction zone, and then elevating an electron temperature of the plasma by at least about 1,000.degree. Kelvin. The elevated electron temperature increases the dissociation of the multiatomic reactant in the plasma and/or inhibits recombination of the multiatomic reactant when dissociated. The method may be practiced to enhance the chemical vapor deposition of materials such as silicon and diamond.
    Type: Grant
    Filed: August 31, 1988
    Date of Patent: February 6, 1990
    Assignee: The Board of Trustees of Leland Stanford Junior University
    Inventor: Charles H. Kruger, Jr.
  • Patent number: 4898650
    Abstract: A method of cleaning a metal surface by means of a laser to improve the surface characteristics, prior to plating thereover with a noble metal, such as gold. More particularly, the method hereof includes the steps of illuminating the desired areas of said metal surface with a laser beam; provided, however, the laser power density is controlled to vaporize surface contaminants and embedded foreign materials, without significantly altering the properties of the metal, in preparation for plating said cleaned areas with said noble metal.
    Type: Grant
    Filed: May 10, 1988
    Date of Patent: February 6, 1990
    Assignee: AMP Incorporated
    Inventors: Jeff C. Wu, George B. Cvijanovich, Richard T. Williams
  • Patent number: 4895880
    Abstract: A process for coating a substrate with an essentially colorless radiation curable composition which comprises coating said substrate with a visible light sensitive composition comprising a free radical addition polymerizable or crosslinkable material and a photobleachable ionic dye-counter ion compound capable of absorbing visible light and generating free radicals; exposing said composition to light to harden said composition; and bleaching said composition to an essentially colorless state, and photohardenable compositions containing photobleachable ionic dye-counter ion compounds as photoinitiators useful in the aforesaid process.
    Type: Grant
    Filed: September 18, 1987
    Date of Patent: January 23, 1990
    Assignee: The Mead Corporation
    Inventors: Peter Gottschalk, Douglas C. Neckers, Gary B. Schuster
  • Patent number: 4895735
    Abstract: A system and method for forming a pattern, such as a layer of metallization, on a surface. A layer comprising patterning material is positioned next to a deposition surface and a portion of the layer is heated to deposit some of the patterning material on the surface. The invention provides a means for transferring a pattern under atmospheric temperature and pressure conditions.
    Type: Grant
    Filed: March 1, 1988
    Date of Patent: January 23, 1990
    Assignee: Texas Instruments Incorporated
    Inventor: Eliot V. Cook
  • Patent number: 4892751
    Abstract: A method of forming a thin film wherein a gas which contains an element used to constitute a desired thin film as at least a part of its constituent elements or a condensed solid layer of this gas is irradiated with a high output power laser beam to dissociate the gas or the solid layer of the gas and thereby locally produce a plasma, and a substrate is irradiated with reactive particles produced in the plasma, thereby obtaining a highly-pure high-quality thin film. Also disclosed is an apparatus for realizing this method.
    Type: Grant
    Filed: December 14, 1987
    Date of Patent: January 9, 1990
    Assignee: Hitachi, Ltd.
    Inventors: Kiyoshi Miyake, Akira Shintani, Keizo Suzuki, Takao Miyazaki
  • Patent number: 4891355
    Abstract: A method of producing a superconducting circuit by forming a film having a superconducting phase on a substrate and applying a laser beam to a part of the superconducting phase to cause transition of the part of the superconducting phase into a non-superconducting phase.
    Type: Grant
    Filed: August 22, 1988
    Date of Patent: January 2, 1990
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Noriki Hayashi, Satoshi Takano, Kenji Miyazaki, Noriyuki Yoshida
  • Patent number: 4891242
    Abstract: A hybrid IC substrate has a substrate body and a retaining film which is formed on a surface of the substrate body. The retaining film enables a solution containing a circuit-element-forming material to permeate therethrough and retains the solution on the substrate body. The solution, which is expelled onto the hybrid IC substrate in the form of liquid drops, permeates the above-mentioned retaining film and becomes attached to the surface of the substrate body. Then, the hybrid IC substrate is baked. The retaining film is thus baked off, thereby forming a film of the circuit-element-forming material as a circuit pattern on the substrate body.
    Type: Grant
    Filed: July 1, 1987
    Date of Patent: January 2, 1990
    Assignees: Kabushiki Kaisha Toyoda Jidoshokki Seisakusho, Shuzo Hattori
    Inventors: Takatoshi Ito, Akihiro Yoshida, Kazunori Shimazaki, Shuzo Hattori
  • Patent number: 4888204
    Abstract: High purity gold films are photochemically deposited on substrates from the gold containing compound (CH.sub.3).sub.2 Au[CH(COCF.sub.3).sub.2 ]. A vapor of the gold containing organometallic compound, possibly mixed with a carrier gas, is flowed over the surface of the substrate, which is at 0.degree. C. to 160.degree. C., and preferably at ambient temperature. Photodissociation is induced with ultraviolet light, inasmuch as the organometallic compound is strongly absorbing in the range of from about 300 to 340 nanometers. Substantially no organic fragments are deposited upon the surface, so that the deposited gold film is of high purity.
    Type: Grant
    Filed: September 12, 1988
    Date of Patent: December 19, 1989
    Assignee: Hughes Aircraft Company
    Inventors: Lee W. Tutt, John E. Jensen
  • Patent number: 4888305
    Abstract: An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.
    Type: Grant
    Filed: March 9, 1989
    Date of Patent: December 19, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kunio Suzuki, Susumu Nagayama, Takashi Inujima, Masayoshi Abe, Takeshi Fukada, Mikio Kinka, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Kaoru Koyanagi
  • Patent number: 4886627
    Abstract: Conductive structures in polymers are obtained by a method in which poly(organylheteroacetylenes) of formula I ##STR1## or a mixture of poly(organylheteroacetylenes) of formula I and other polymers are exposed to radiation of high energy density, preferably laser radiation. At relatively low temperatures of 100.degree. C. to 600.degree. C., the polymer structure is effected so that electrically conductive structures result. The products are employed in electrical engineering, electronics and microelectronics, preferably as printed conductors. The invention makes it possible to inscribe long-term stable, conductive structures in an insulating polymer matrix in a one-step method, it being possible to use modern computer techniques (computer graphics)and to produce computer-aided conductor structures directly. The polymers can be used without supports or applied on rigid or flexible materials.
    Type: Grant
    Filed: March 15, 1988
    Date of Patent: December 12, 1989
    Assignee: VEB Metallurgieelektronik Leipzig
    Inventors: Harald Gruber, Andreas M. Richter, Egon Fanghanel, Hans-Klaus Roth, Heinz Friedrich, Siegfried Maras
  • Patent number: 4886704
    Abstract: This invention relates to a strippable coating film for use as a masking material serving to create attractively finished boundaries, for example, in multi-color painting of automobiles and the like, as well as a coating method using such a coating film.A coating film containing 1 to 20 parts by weight of carbon black per 100 parts by weight of the resin component present therein is suitable. Especially preferred is a coating film formed of an acrylic emulsion paint and having an adhesion to the substrate of 20 to 1000 g/inch as expressed in terms of 180.degree. peeling strength. It is disclosed that, by equipping a YAG laser with a Q-switching oscillator unit and operating the Q-switch at a pulse repetition frequency of 0.5 to 30 kHz, the coating film can be cleanly cut to achieve an attractive finish in multi-color painting.
    Type: Grant
    Filed: June 26, 1987
    Date of Patent: December 12, 1989
    Assignee: Mitsui Toatsu Chemicals, Incorporated
    Inventors: Keiichi Kamada, Motoyuki Torikai, Yasuo Ohkita
  • Patent number: 4885260
    Abstract: Disclosed is a vapor phase growth method of compound semiconductor in which source gases are introduced into an epitaxial growth reactor at fixed feed rates, the substrate surface is irradiated with light, and the light irradiation is turned on and off, or the intensity of light irradiation is increased or decreased, so that an epitaxial layer structure changes in the composition, and the carrier concentration and conductivity type abruptly or continuously change in the growth film in the direction of the thickness.
    Type: Grant
    Filed: February 16, 1988
    Date of Patent: December 5, 1989
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yuzaburo Ban, Masaya Manno, Minoru Kubo, Mototsugu Morisaki, Mototsugu Ogura
  • Patent number: 4883540
    Abstract: This invention relates to a metallic substrate having on its surface an adherent photo-product coating, and a method for coating that substrate, which coating is formed by exposing to light in the presence of an oxygen source, a reactant mixture comprising: 2,2'4,4'-tetrahydroxybenzophenone, with (1) ammonium hydroxide and optionally a trace amount of at least one reactive metal, or (2) ammonium hydroxide and at least one metal salt, or (3) at least one metal salt and at least one amine, or (4) ammonium hydroxide, at least one metal salt and at least one amine; in a suitable solvent.
    Type: Grant
    Filed: February 18, 1988
    Date of Patent: November 28, 1989
    Assignee: S. C. Johnson & Son, Inc.
    Inventors: Robert M. Etter, Phillip J. Neumiller
  • Patent number: 4883688
    Abstract: A device and a method for producing the device for use in a chromatographic system wherein a component of a mixture is partitioned is comprised of a chromatographic material. In the chromatographic system the component traverses at least a portion of the chromatographic material. The device generally has at least one longitudinal edge substantially corresponding to the direction of traverse of the component. The longitudinal edge is modified to control the shape of the fron t of the traversing component by introducing along the edge either a plurality of indentations or a chemical substance.
    Type: Grant
    Filed: July 5, 1988
    Date of Patent: November 28, 1989
    Assignee: Syntex (U.S.A) Inc.
    Inventors: Thomas M. Houts, Edwin F. Ullman
  • Patent number: 4882199
    Abstract: A method for producing a uniform metal coating on a substrate consisting of (1) selecting one or more metals to be coated onto the substrate wherein the metals are soluble in a molten salt when heated, (2) preparing a bath consisting of the dissolved metal-molten salt, (3) inserting a substrate into the bath, and (4) decreasing the temperature at the substrate to a level at which the metal will precipitate out of solution onto the substrate. Multiple coatings can be made by repeating the method using the same or different metal-molten salt systems. Deposition can be enhanced by adding more salt to the bath to increase precipitation of the metal onto the substrate or by introducing additional metal into the bath by electrolysis, either by electrowinning or electrorefining. The metal coating can be patterned by localized heating of the metal coating in the metal-molten salt bath to reverse deposition or by masking areas on the substrate prior to deposition.
    Type: Grant
    Filed: October 13, 1987
    Date of Patent: November 21, 1989
    Assignee: Massachusetts Institute of Technology
    Inventors: Donald R. Sadoway, Rana P. Singh
  • Patent number: 4882200
    Abstract: A laser, such as an excimer laser, is employed to ablate electroless plating activator material from polymer and other substrates. The treated substrates are then immersed in electroless plating baths for plating of conductive material over remaining activator material. The method is particularly effective for depositing conductive patterns on non-flat substrates and on substrates needing plated-through connections. High resolution patterns are created on any compatible polymer substrate with any compatible electroless plating activator material.
    Type: Grant
    Filed: August 23, 1988
    Date of Patent: November 21, 1989
    Assignee: General Electric Company
    Inventors: Yung S. Liu, Willard T. Grubb
  • Patent number: 4882299
    Abstract: A processing apparatus and method for depositing doped or undoped polysilicon on a wafer utilizing a single process chamber to heat the wafer, provide a silicon comtaining gas, and if desired, an appropriate dopant gas to the chamber with the excitation energy being provided by either or both of a remotely generated plasma form and illumination of the wafer with an in situ generated ultraviolet energy.
    Type: Grant
    Filed: November 5, 1987
    Date of Patent: November 21, 1989
    Assignee: Texas Instruments Incorporated
    Inventors: Dean W. Freeman, James B. Burris
  • Patent number: 4880496
    Abstract: A method and device for creating patterns on a wide variety of substrates. The dimensions are variable in a wide range, from sub-microscopic and upwards. The device can also be used for microsurgery type manipulations in genetic engineering: a variety of substances can be introduced into biological cells. The production of patterns is based on the guidance of the radiation, electron beam etc. via a tube having a small-diameter tapered end which is metal-coated, and which can be brought to very close proximity of the substrate.
    Type: Grant
    Filed: June 28, 1988
    Date of Patent: November 14, 1989
    Inventors: Isaiah Nebenzahl, Aaron Lewis
  • Patent number: 4880770
    Abstract: A metalorganic deposition method is disclosed for manufacturing a superconducting oxide film on a substrate, in which a mixed metalorganic precursor is coated and heated to its thermal decomposition temperature to create an amorphous mixed metal oxide layer. The amorphous layer is then converted to a crystalline coating by further heating followed by cooling in the presence of O.sub.2 atmosphere.
    Type: Grant
    Filed: May 4, 1987
    Date of Patent: November 14, 1989
    Assignee: Eastman Kodak Company
    Inventors: Jose M. Mir, John A. Agostinelli, David L. Peterson, Gustavo R. Paz-Pujalt, Brian J. Higberg, Gopalan Rajeswaran
  • Patent number: 4879176
    Abstract: Semicrystalline polymers can have predetermined amounts of their surfaces rendered quasi-amorphous by irradiation. Polymer surfaces which are so modified can display enhanced ability to accept bonding to other materials.
    Type: Grant
    Filed: April 27, 1988
    Date of Patent: November 7, 1989
    Assignee: Minnesota Mining and Manufacturing Company
    Inventors: Andrew J. Ouderkirk, Douglas S. Dunn, Robert W. Warner
  • Patent number: 4877481
    Abstract: A laser scribing method is described. A laser beam is deprived of its tail which appears along a groove which is engraved by scribing. The scribing can be performed without forming protrusion along the edge of grooves engraved by the scribing. The depriving of the tail is accomplished by coating the film with a buffer film which is removed after the scribing.
    Type: Grant
    Filed: May 27, 1988
    Date of Patent: October 31, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takeshi Fukuda, Shunpei Yamazaki, Akira Sugawara
  • Patent number: 4877644
    Abstract: A method for the selective plating of a metal substrate on which a thin polymeric plating resist is first applied, followed by the selective removal of said resist to expose portions of said substrate to plating, and plating. More particularly, the method hereof includes the steps of selecting a laser wavelength which couples well to the metal substrate, choosing a polymer based plating resist having a low optical coefficient of absorption at said wavelength, curing said resist, subjecting selective areas of said resist to a single excimer laser shot, having a short wavelength, to cause ablative removal of the resist over the selective areas of said substrate, and subjecting said exposed portions of said substrate to metal plating.
    Type: Grant
    Filed: April 12, 1988
    Date of Patent: October 31, 1989
    Assignee: AMP Incorporated
    Inventors: Jeff C. Wu, Richard T. Williams, John R. Rowlette, Charles P. Brooks, Richard H. Zimmerman
  • Patent number: 4874672
    Abstract: This invention relates to a plastic substrate having on its surface an adherent photo-product coating, and a method for coating that substrate, which coating is formed by exposing to light in the presence of an oxygen source, a reactant mixture comprising: 2,2'4,4'-tetrahydroxybenzophenone, with (1) ammonium hydroxide and optionally a trace amount of at least one reactive metal, or (2) ammonium hydroxide and at least one metal salt, or (3) at least one metal salt and at least one amine, or (4) ammonium hydroxide, at least one metal salt and at least one amine; in a suitable solvent.
    Type: Grant
    Filed: February 18, 1988
    Date of Patent: October 17, 1989
    Assignee: S. C. Johnson & Son, Inc.
    Inventors: Robert M. Etter, Phillip J. Neumiller
  • Patent number: 4874741
    Abstract: The present invention relates to a method of directly forming a thin, orientated layer, or film, of superconducting materials, suitably mixtures of Pervoskite-type superconducting oxides, on a support base, or substrate, by depositing the layer, or film, in an ionized oxygen atmosphere using a laser beam means. The present process is carried out at temperatures sufficiently high that the film adheres to the substrate, but sufficiently low that a superconducting layer is directly deposited the substrate. Preferably the process is carried out at a temperature less than about 450 degrees C. Temperatures as low as 400 degrees C. have been found useful.
    Type: Grant
    Filed: April 14, 1988
    Date of Patent: October 17, 1989
    Assignee: The Research Foundation of State University of New York
    Inventors: David T. Shaw, Sarath Witanachchi, Hoi-Sing Kwok
  • Patent number: 4874920
    Abstract: In a method of making an electronic device having at least a transparent conductive layer, which includes at least a step of forming a transparent conductive layer member and a step of forming a transparent conductive layer by patterning the transparent conductive layer member using a spot-shaped or linear laser beam or beams, each of which has a short wavelength of 400 nm or less and optical energy greater than the optical energy band gap of the transparent conductive layer.
    Type: Grant
    Filed: January 13, 1989
    Date of Patent: October 17, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenji Itoh, Susumu Nagayama
  • Patent number: 4873413
    Abstract: Method and apparatus for writing a line on a patterned substrate in which a direct writing of a CVD line is performed on at least two of patterned films on a substrate in accordance with the thermal decomposition of a CVD raw material gas which is resulted from the radiation of a laser beam. The laser beam is controlled in its power dependent on the difference between thermal conductivities of the at least two of patterned films to avoid a disconnection of the CVD line, the occurrence of thinner portion thereof and so on.
    Type: Grant
    Filed: November 20, 1987
    Date of Patent: October 10, 1989
    Assignee: NEC Corporation
    Inventors: Fumihiko Uesugi, Yukio Morishige
  • Patent number: 4871582
    Abstract: Disclosed is a method of manufacturing a magnetic recording medium which comprises the steps of: forming a non-magnetic layer on a substrate by using a non-magnetic material which is magnetizable by heat to a predetermined temperature, and then locally heating the non-magnetic layer to magnetize the heated part to thereby form a magnetic layer thereat.
    Type: Grant
    Filed: August 20, 1987
    Date of Patent: October 3, 1989
    Assignee: Brother Kogyo Kabushiki Kaisha
    Inventor: Takeshi Miyabayashi
  • Patent number: 4871415
    Abstract: An apparatus is disclosed for curing a defect in a grille formed on an interior face of a color cathode ray tube panel. The apparatus includes a support structure including a first rail member onto which is mounted a camera including a magnifying lens for viewing on a display monitor the grille of the panel. The panel is seated on a positioning apparatus which allows the panel to be adjusted such that the defect to be removed is centered on cross-hairs located on the monitor. The support structure includes a second rail member to which is mounted a laser apparatus which produces a beam of laser energy to remove the defect from the grille.
    Type: Grant
    Filed: December 30, 1988
    Date of Patent: October 3, 1989
    Assignee: Zenith Electronics Corporation
    Inventors: Yong S. Park, Thomas M. Remec
  • Patent number: 4868068
    Abstract: A IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines.
    Type: Grant
    Filed: March 31, 1987
    Date of Patent: September 19, 1989
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Yamaguchi, Mikio Hongo, Tateoki Miyauchi, Akira Shimase, Satoshi Haraichi, Takahiko Takahashi, Keiya Saito
  • Patent number: 4868005
    Abstract: The invention relates to visible-laser deposition reactions of metal containing oxyhalide and carbonyl vapors, such as, chromyl chloride vapor, CrO.sub.2 Cl.sub.2, or cobalt carbonyl, Co.sub.2 (CO).sub.8, for direct writing of metal containing opaque patterns on various substrates (Si, SiO.sub.2, GaAs and glass). Deposition at low laser power is by photolysis of adsorbed reactant molecules. Higher powers initiate deposition photochemically and continue it with a combined photolytic/pyrolytic reaction, simultaneously inducing a solid-phase conversion of the deposited film. Mixed Cr.sub.2 O.sub.3 /CrO.sub.2 or cobalt thin films of 1-nanometer to several-micrometer thickness, as well as 1-millimeter-long single crystals of Cr.sub.2 O.sub.3 or cobalt, can be grown with this process, the former at rates up to 3 .mu.m/s. Thin chromium oxide films produced in this manner are strongly ferromagnetic.
    Type: Grant
    Filed: March 10, 1988
    Date of Patent: September 19, 1989
    Assignee: Massachusetts Institute of Technology
    Inventors: Daniel J. Ehrlich, Mordecai Rothschild
  • Patent number: 4868006
    Abstract: Semicrystalline polymers can have predetermined amounts of their surfaces rendered amorphous or quasi-amorphous by irradiation. Further treatment of these polymer surfaces which have been so modified, such as crystallization, can produce surfaces with reduced coefficients of friction.
    Type: Grant
    Filed: April 27, 1988
    Date of Patent: September 19, 1989
    Assignee: Minnesota Mining and Manufacturing Company
    Inventors: Elaine M. Yorkgitis, Samuel Smith, Andrew J. Ouderkirk, Douglas S. Dunn
  • Patent number: 4867223
    Abstract: A method and apparatus for forming a metallic sheet having a concave-convex profile by chemical vapor deposition utilizes a die having a profiled surface defined by a number of spaced protrusions. The method comprises covering at least a portion of the profiled surface with a mask of transparent material in such a way that the mask comes into a closely adjacent relation to the top faces of the protrusions, feeding at a reaction gas of a metallic compound to a restricted space defined between the mask and the profiled surface, radiating a light beam through the transparent mask onto the profiled surface in order to decompose the reaction gas and deposit on the profiled surface a metallic layer, and removing the resulting deposited metallic layer from the profiled surface to obtain a metallic sheet having a concave-convex profile corresponding to the profiled surface of the die.
    Type: Grant
    Filed: November 7, 1988
    Date of Patent: September 19, 1989
    Assignee: Matsushita Electric Works, Ltd.
    Inventors: Syuusuke Matsumura, Hajime Kojima, Takahiro Miyano
  • Patent number: 4865923
    Abstract: Synthetic layered structures, which may be semiconductor structures, are modified, both laterally and vertically, to provide novel electronic, optoelectronic, and optical properties. This is accomplished by selective intermixing of such layered structures through selective irradiation with laser beam or electron beam energy sources to effect interaction between neighboring regions, to a degree dependent on the energy density, while avoiding physical damage to the layered structures.
    Type: Grant
    Filed: March 7, 1988
    Date of Patent: September 12, 1989
    Assignee: Amoco Corporation
    Inventors: John D. Ralston, Anthony L. Moretti, Ravinder K. Jain
  • Patent number: 4865873
    Abstract: A metal is electrolessly plated on a substrate which is first coated with at least one ablatively-removable layer that is selectively irradiated with laser radiation to obtain a pattern for the deposition of metal on the substrate. The electroless plating solution applied to the substrate after the irradiated substrate is coated with a catalyst also serves to remove the unirradiated portion of the ablatively-removable layer. The method is particularly suited for plating fine lines of metal, especially on non-planar surfaces.
    Type: Grant
    Filed: December 7, 1987
    Date of Patent: September 12, 1989
    Assignee: General Electric Company
    Inventors: Herbert S. Cole, Jr., Lionel M. Levinson, Yung S. Liu, Theresa A. Sitnik
  • Patent number: 4861622
    Abstract: An improved method for depositing material on a substrate is shown. The material to be deposited is energized by irradiation with light in a chamber in which a CVD method is carried out. The energy induced by the irradiation remains in the molecules of the material even after the molecules have lain on the substrate. With the residual energy, the molecules can wander on the substrate even to a hidden surface. Due to this wandering, the deposition can be performed also on the inside of a deep cave. A semiconductor device is thereafter formed on the inside of the cave.
    Type: Grant
    Filed: December 24, 1987
    Date of Patent: August 29, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takashi Inujima
  • Patent number: 4861620
    Abstract: A pigment layer is provided on a surface of an article on which a marking is to be formed and is irradiated with patterned laser light to change internal molecular structure of pigment to thereby change its color. The marking can be multicolored by a suitable selection of pigment and laser energy density.
    Type: Grant
    Filed: October 22, 1987
    Date of Patent: August 29, 1989
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kenkoku Azuma, Masaaki Sakaki
  • Patent number: 4859625
    Abstract: A method for epitaxial growth of compound semiconductor containing three component elements, two component elements thereof being the same group elements, in which three kinds of compound gases each containing different one of the three component elements are cyclically introudced, under a predetermined pressure for a predetermined period respectively, onto a substrate enclosed in an evacuated crystal growth vessel so that a single crystal thin film of the compound semiconductor is formed on the substrate.
    Type: Grant
    Filed: November 20, 1987
    Date of Patent: August 22, 1989
    Assignee: Research Development Corporation of Japan, Junichi Nishizawa and Oki Electric Industry Co., Ltd.
    Inventor: Fumio Matsumoto
  • Patent number: 4859279
    Abstract: An improvement of a method for structured LCVD deposition onto, in particular, non-homogenous material of a substrate member, wherein a metal film of, in particular, tungsten that has a leveling effect with respect to reflectivity and/or lateral heat propagation is provided on a substrate surface before the deposition.
    Type: Grant
    Filed: August 31, 1988
    Date of Patent: August 22, 1989
    Assignee: Siemens Aktiengesellschaft
    Inventor: Dieter Baeuerle
  • Patent number: 4859496
    Abstract: Disclosed is a method of producing an electrically-conductive transparent film. A substrate is placed in contact at its surface with a stream of reactive gas which comprises a tin compound, oxygen and an impurity material that enhances the conductivity of the film to be produced. The surface of the substrate is partially irradiated by a laser beam. The reactive gas in contact with the laser beam projected portion on the substrate surface is decomposed and deposits on the portion so that a high-conductivity transparent film of tin oxide (SnO.sub.2) is formed only on the portion on the substrate surface.
    Type: Grant
    Filed: August 31, 1987
    Date of Patent: August 22, 1989
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yufuko Toyonaga, Suzushi Kimura, Masaaki Ueda, Osamu Tabata, Saburo Kimura
  • Patent number: 4857139
    Abstract: A photo CVD apparatus includes a reaction chamber, a vacuum pump, and a light source chamber disposed in the reaction chamber, the light source chamber having a light window. A light source is provided in the light source chamber for irradiating the inside of the reaction chamber through the window. A device inputs reactive gas into the reaction chamber, and an electrode is disposed in the reaction space adjacent to the window and located between the substrate and the window. A method of depositing a layer on a substrate includes the steps of disposing a substrate in a reaction chamber, introducing a reactive gas, and initiating a photo-chemical reaction to deposit the product of the reaction on the substrate by irradiating the reactive gas with light emitted from a light source through a window of a light source chamber in which the light source is disposed. The substrate is then removed from the reaction chamber, and an etchant gas is introduced into the reaction chamber.
    Type: Grant
    Filed: January 4, 1988
    Date of Patent: August 15, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mamoru Tashiro, Kazuo Urata, Shunpei Yamazaki
  • Patent number: 4855014
    Abstract: Disclosed is a method of manufacturing semiconductor devices, in which a monocrystalline thin film is formed by dissolving and recrystallizing either amorphous or polycrystalline thin film by annealing with energy beams, comprising the steps of: forming a compound film of a belt-shaped high melting point metal having a width narrower than the diameter of said energy beams and polycrystalline silicon, on said amorphous or polycrystalline thin film; causing said amorphous or polycrystalline thin film to contact with a monocrystalline substrate beneath the center line of said belt-shaped compound film at a position of more than 50 to 200 .mu.
    Type: Grant
    Filed: January 23, 1987
    Date of Patent: August 8, 1989
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Seizo Kakimoto, Jun Kudo, Masayoshi Koba
  • Patent number: 4855256
    Abstract: A masking layer is formed on the light-emitting mirror surface of a semiconductor laser body. The masking layer is capable of blocking light emitted from the semiconductor laser body and of being thermally melted and evaporated by exposure to the emitted light. When the masking layer is formed on the light-emitting mirror surface of the semiconductor laser body, a small light-emitting hole is defined in the masking layer by the heat of the emitted light which is effective to prevent the material of the masking layer from being evaporated on a portion of the light-emitting surface.
    Type: Grant
    Filed: February 12, 1988
    Date of Patent: August 8, 1989
    Assignees: Ricoh Company, Ltd., Hiroshi Kobayashi, Haruhiko Machida
    Inventors: Hiroshi Kobayashi, Haruhiko Machida, Makoko Harigaya, Yasushi Ide, Jun Akedo
  • Patent number: 4853252
    Abstract: A method and coating material for applying electrically conductive printed patterns to insulating substrates is provided. The coating material includes a non-metallic, grainy carrier substance having metal of the oxidation degree 0 applied thereto. An energy radiation source, particularly of a deflectable laser beam, is used to secure anchoring of the carrier substance to the substrate in the region of the desired printed pattern. As a consequence of a three-dimensional arrangement of the metal, a three-dimensional nuclei distribution is produced that leads to a reliable and fast metallization of the printed pattern on the basis of chemical metal deposition. The method of the invention is especially suited for laser pattern transfer for the manufacture of printed circuit boards.
    Type: Grant
    Filed: December 3, 1987
    Date of Patent: August 1, 1989
    Assignees: Siemens Aktiengesellschaft, Michael Huber GmbH
    Inventors: Juergen Frankel, Antoon Mattelin, Pol Pecceu, Ferdinand Quella, Hans-Fr. Schmidt, Luc Boone, Sybille Von Tomkewitsch, Marc De Vogelaere
  • Patent number: 4849363
    Abstract: An integrated circuit and a method of altering such an integrated circuit (e.g., during final testing of the circuit) are disclosed. The method can be used to program a circuit, wire around defective portions of a circuit, or otherwise permanently alter a circuit by employing a directed energy source such as a laser to sever electrical paths in an upper layer of metallization in an integrated circuit. The integrated circuit comprises a laminated upper metallization layer, the upper layer(s) of which laminate are removed from the laser-alterable lower layer at selected locations in the metallization layer to provide laser-alteration sites in the circuit. In a preferred embodiment, the upper metallization layer comprises a two-layer laminate including an upper, relatively thick layer of an aluminum/silicon alloy and a lower, relatively thin layer of titanium nitride.
    Type: Grant
    Filed: March 18, 1988
    Date of Patent: July 18, 1989
    Assignee: Digital Equipment Corporation
    Inventors: Michael Coffey, Richard J. Hollingsworth
  • Patent number: 4849249
    Abstract: A process for forming a deposited film according to chemical vapor deposition on a substrate comprises the first step of forming an amorphous film by reacting an excited species (AY) containing an atom (A) which becomes the constituent constituting said deposited film and an atom (Y) with high electronegativity with an active species (Z) which is chemically reactive with said excited species (AY) at a first ratio and the second step of forming a polycrystalline film by reacting said excited species (AY) with said active species (Z) at a second ratio which is different from said first ratio.
    Type: Grant
    Filed: April 25, 1988
    Date of Patent: July 18, 1989
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shunichi Ishihara, Yoshiyuki Osada, Shunri Oda, Isamu Shimizu
  • Patent number: 4847181
    Abstract: A laser marking method comprising steps of preparing a label material consisting of a colour layer and a transparant layer, applying the label material on a marking surface of a work, illuminating the marking surface through the label material with a laser beam of a wave length transilluminating the transparent layer so as to form a mark of a certain information on the marking surface of the work and in the coloured layer of the label material, and removing the label material from the marking surface of the work to produce a recorded label. The label can be produced simultaniously with the mark on the work wherein the information shown on the label is sophisticatedly identical with the information of the mark on the work surface.
    Type: Grant
    Filed: August 7, 1987
    Date of Patent: July 11, 1989
    Assignee: Mazda Motor Corporation
    Inventor: Kiyofumi Shimokawa
  • Patent number: 4847138
    Abstract: There is disclosed a method of producing a transition metal pattern on a glass or glass-ceramic substrate by selective exudation of a transition metal from a glass substrate containing the metal as an oxide. The selective exudation is effected by applying an intense, well-focused source of energy to a glass in a pattern corresponding to the desired metal pattern. This develops localized heating, and thereby causes corresponding localized metal exudation from the glass. The metal pattern may be rendered electroconductive, and may constitute a pattern of interconnecting lines for microcircuitry.
    Type: Grant
    Filed: October 7, 1987
    Date of Patent: July 11, 1989
    Assignee: Corning Glass Works
    Inventors: Elizabeth A. Boylan, Gerald D. Fong
  • Patent number: 4847112
    Abstract: A process for surface treatment of a rolling mill roll coated with a coating of metal wherein the coated roll is surface heated, e.g. by a continuous laser beam in a helical path to melt the coating and a thin superficial layer of the roll thereby forming an uninterrupted molten alloy layer comprising at least a part of the coating and of the superficial layer of the roll, cooling the alloy layer, and marking the roller by an intermittent laser beam, e.g. following the same helical path with a given delay to produce local fusion of the alloy layer and of the roll surface beneath the alloy layer and form micro-craters having bases and rims integrated, after solidification, with the alloy layer.
    Type: Grant
    Filed: January 29, 1988
    Date of Patent: July 11, 1989
    Assignee: Centre De Recherches Metallurgiques-centrum Voor Research in de Metallurgie
    Inventor: Jacques Halleux
  • Patent number: 4844947
    Abstract: A system which utilizes a source of ultraviolet radiation to mark a surface or to cure selectively a photosensitive paint applied to a surface. The source of UV light is either a laser or a broadband source and the light is controlled by an aperture and/or a stencil apparatus. The photosensitive paint is applied by a controlled technique as a protective or a decorative coating.
    Type: Grant
    Filed: May 5, 1988
    Date of Patent: July 4, 1989
    Assignee: Westinghouse Electric Corp.
    Inventors: William H. Kasner, Roger L. Swensrud, Daniel P. Soroka, Wei-Fang A. Su, Steve A. Wutzke, Vincent A. Toth, Luciano C. Scala