Abstract: A method for improving step coverage of metallization layers of an aluminum alloy on an integrated circuit involves use of a deposited layer of a high melting point metal, such as tungsten or an alloy of tungsten and titanium, as an anti-reflective coating (ARC) to increase the efficient use of laser energy for planarization purposes where the underlying aluminum alloy covers a step, such as at an open via.

Abstract: Bi-based oxide superconducting films are deposited on Bi-based oxide ceramic substrates by screen printing, laser sputtering and other coating methods wherein the substrates have a similar crystalline structure as the Bi-based oxide superconducting films.

Abstract: A semiconductor IC device having a substrate, a patterned conductor layer for interconnection of regions in the substrate and a passivation layer covering the device is provided with an additional conduction path of a pattern and/or part of the patterned conductor layer is removed for disconnection for the purpose of evaluation of the characteristics of the device. The additional conduction path is formed by forming a hole in the passivation layer to expose a part of the conductor layer, directing, in an atmosphere containing a metal compound gas, an ion beam onto the hole and onto a predetermined portion of the passivation layer on which the additional conduction path of a pattern is to be formed to thereby form a patterned film of the metal decomposed from the metal compound gas and forming an additional conductor on the patterned film.

Abstract: The moisture or water vapor barrier protection of a composite pressure vessel suitable for use as a composite cased solid propellant rocket motor is improved by immersing the pressure vessel, during pressure testing thereof, in a curable liquid polymer solution, optionally containing electrically conductive material such as metallic flakes or powder, so that the solution may flow into open voids, cracks or fractures in the pressure vessel and subsequently curing the curable liquid polymer in said voids, cracks or fractures.

Abstract: Ordered polymer fibers, such as aramid or polybenzazole, can be coated with a ceramic coating by physical vapor deposition to yield a coated fiber having improved properties.

Abstract: The present invention describes a method to produce a patterned superconducting solid preferably as a thin film. Unsaturated organic acid metal salts of suitable metals are dissolved in an organic solvent, mixed thoroughly and cast as a film on a substrate. The concentration of these organic carboxylate metal salts is adjusted such that a superconducting metal oxide ratio is obtained upon pyrolysis at temperatures up to 1000.degree. C. with subsequent slow cooling. A pattern (mask) is placed over the film and the film is irradiated to polymerize and crosslink the exposed portions. The unpolymerized and uncrosslinked portions are removed usually by using selective solvents or solvent mixtures. The solid remaining is heated in oxygen or air to about 1000.degree. C., which removes the organic portions and leaves metal oxide residue. The metal oxides are then cooled slowly and annealed to produce the patterned metal oxide superconducting materials.

Abstract: A process of multicolor printing where a first sheet with a layer of a first color material thereon has a portion of said first color material destroyed by a laser to leave a first image of said first colored material. The first image is then transferred to a permanent support. A second sheet with a layer of a second color material has a layer applied thereto to leave a second image of said second material, which second image is also applied to the premanent support to make a combined image. The same procedure can be followed with third and fourth colored materials to provide third and fourth images superimposed over the first and second images.

Abstract: A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agenThe invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.

Abstract: A system for pipe lining including a forward seal and a following spreader defining a chamber therebetween for receiving flowable lining material. The spreader is immediately followed by a cylindrical elongate platen formed of radiant-energy transparent material. A radiant energy source is mounted in the platen for transmission of radiant energy through the platen and into the lining material simultaneously with the forming of the lining material into position by the platen as the apparatus moves along the interior of the pipe.

Abstract: A laser sputtering apparatus has a vacuum chamber, a target holder installed in the vacuum chamber, arranged to oppose the target in the vacuum chamber, a substrate mounted on the substrate support, and a laser beam source which emits laser beams onto the target through a window provided in the vacuum chamber wall, providing a laser sputtering apparatus that supplies dielectric thin films with a high permittivity and a high withstanding voltage.

Abstract: A method and apparatus for selectively depositing a layer of material from a gas phase to produce a part comprising a plurality of deposited layers. The apparatus includes a computer controlling a directed energy beam, such as a laser, to direct the laser energy into a chamber substantially containing the gas phase to preferably produce photodecomposition or thermal decomposition of the gas phase and selectively deposit material within the boundaries of the desired cross-sectional regions of the part. For each cross section, the aim of the laser beam is scanned over a target area and the beam is switched on to deposit material within the boundaries of the cross-section. Each subsequent layer is joined to the immediately preceding layer to produce a part comprising a plurality of joined layers. In an alternate embodiment of the present invention, a gas phase is condensed on a surface and a laser beam is used to selectively evaporate, transform, activate or decompose material in each layer.

Abstract: Vapor deposition of a thin film is accomplished by employing a pulsed laser to irradiate at least a region of a homogeneous stoichiometric complex material pellet with sufficient energy density to accomplish congruent evaporation of constituents of the material. The energy density is further at least sufficient to cause at least a predetermined portion, a central forward lobe, of the evaporant to have approximately the same stoichiometry as the irradiated material. A substrate is positioned to allow deposit thereon of that lobe portion of the evaporant as a thin film.

Abstract: A method for preparing a highly aligned thick film of superconducting bismuth strontium calcium copper oxide ceramic material to improve its critical current density. A film about 5-200 .mu.m thick of bismuth strontium calcium copper oxide is deposited on a suitable substrate. The ratios of Bi:(Sr, Ca):Cu in the film are about 2:3:2 to 2:4:3. A laser beam is translated over the deposited film at a rate of about 0.2-15 cm/hr while the film is held at a temperature of about 500.degree.-950.degree. C. The beam is about 0.01-0.50 cm wide along the direction of translation, and provides about 0.2-10W of optical power to the film. The temperature and the beam translation rate, width, and optical power are selected to permit zone melting and resolidification of the film to form the highly aligned thick film of superconducting bismuth strontium calcium copper oxide ceramic material. The J.sub.c may, if desired, be further improved by annealing the resolidified film at about 900.degree.-965.degree. C.

Abstract: Process for repairing or restoring a part with a locallly damaged surface, articularly an anticathode or target consisting of depositing in preferred manner at damaged points of said surface, preferably by chemical vapor deposition, the material constituting said part and then machining said surface in such a way that it conceals its original state.

Abstract: A method of preparing a support for a lithographic printing plate is described, which comprises roughening the support surface by laser irradiation performed under the condition that the support is placed in a liquid or in a gaseous atmosphere, thereby achieving improved stain resistance upon printing and excellent printing press life.

Abstract: A method for producing a semiconductor device including the steps of forming an insulating layer on a substrate, the insulating layer having a plurality of concave portions, forming a non-single crystalline silicon layer on the surface of the insulating layer. The non-single crystalline silicon is patterned so that each concave portion is independently melted and the patterned non-single crystalline silicon layer flows into each of the concave portions to form a single crystalline region by irradiation with an energy ray; and, a semiconductor element is also formed in the single crystalline region.

Abstract: The present invention contemplates a stereolithographic apparatus and method having a liquid organic phase and a fluid phase separated by a membrane that inhibits contact between the phases.

Abstract: The present invention relates to a semiconductor element and a method of forming the same and various kinds of article in which said element is used.Any material selected from the group consisting of SiH.sub.4, Si.sub.2 H.sub.6 and SiF.sub.4, and GeH.sub.4 or GeF.sub.4, are used as raw material gases. H.sub.2 is used as a diluent gas if necessary. A photochemical gas phase vapor deposition method is used, at a pressure of 0.1 to 20 Torr, an optical intensity of 10 to 1,000 mW/cm.sup.2, and a substrate temperature of 50.degree. to 250.degree. C. A semiconductor element formed of a -SiGe:H film having superior photoelectric conductivity, a method of forming a semiconductor element film containing Ge added thereto and having high long wave length-sensitivity and superior film quality can be provided.

Abstract: A surface for the attachment and growth of cells is prepared by first grafting polyacrylic acid chains to a fluorocarbon polymer substrate so that its weight increases by between 0.1 % and 20%. The surface is then treated with concentrated sulphuric acid under such conditions that will separately decarboxylate, aromatize and sulphonate an effective proportion of the grafted polyacrylic acid chains before being dried, soaked in a concentrated acid and brought to a substantially neutral pH for cell attachment and growth thereupon. The surface may also be used as a human tissue implant.

Abstract: A method of making a plugged microporous film from a film which comprises a structural component having pores extending therethrough, and a plugging material within the pores, the method comprising:(a) selectively treating the plugging material so that its susceptibility to a crosslinking treatment differs from a first region of the film to a second region thereof;(b) crosslinking the plugging material at the second region of the film; and(c) removing the uncrosslinked plugging material from the first region of the film leaving plugs of crosslinked plugging material in the pores at the second region of the film.

Abstract: A solid imaging method utilizing photoformable compositions comprising thermally coalescible materials for producing multilayer models and prototypes having improved structural properties and resolution.

Abstract: A reaction chamber for performing a chemical vapor deposition process wherein the window through which the light must pass is prevented from becoming clouded. The chamber is divided by baffles into a reactant zone, a buffer zone, and a window zone, and the momentum flux densities of the gases flowing in the respective zones are about matched. Additionally, discontinuities are provided on the walls of the reactor to impede diffusion of the reactant gas towards the window.

Abstract: Thin films of solid lubricious metal chalcogenides, such as MoS.sub.2, are grown on stainless steel substrates by pulsed laser evaporation (P.L.E.). X-ray photoelectron spectroscopy of PLE deposited MoS.sub.2 films grown at substrate temperatures up to 300.degree. C. have the same stoichiometry as bulk MoS.sub.2. MoS.sub.2 PLE deposited films grown at 450.degree. C. are sulfur rich. These laser-deposited films have a granular structure and exhibit none of the dendritic structures typically observed in sputter-deposited films. The coefficients of friction of PLE films were measured in laboratory air and ranged from 0.09-0.25; the majority of values were between 0.16 and 0.20. These frictional coefficients are in the appropriate range for a solid lubricant.

Abstract: A method of forming a ceramic monolith comprises exposing a pre-formed metal substrate to a NaCl filtered continuous wave laser beam of about 50 to 100 W power and about 80 to 315 W/cm.sup.2 power density in an atmosphere of a gas desired to react with the metal, allowing for the gas to diffuse into the metal substrate at a temperature effective to permit reaction thereof to form the ceramic monolith, and cooling the monolith.

Abstract: A method for producing a patterned layer of high T.sub.c oxide superconductor is provided in which patterning is accomplished prior to the attainment of a superconducting state in the layer. A solution containing precursor components of the desired oxide superconductor is sprayed onto a substrate and dried to provide a layer thereon. This layer is then irradiated in selected areas to convert the irradiated layers to an intermediate oxide state, the nonirradiated areas being unchanged. The nonirradiated areas are then dissolved away, leaving a pattern of oxide material. This oxide material is then converted to a high T.sub.c superconducting state, as by annealing in an oxygen atmosphere. This provides the patterned layer of high T.sub.c oxide superconductor. An example of a such a superconductor is a mixed copper oxide, such as Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x.

Abstract: A distributed electron cyclotron resonance remote plasma processing apparatus and method which includes generating electron cyclotron resonance activated species in plasma formation regions distributed peripherally around, remote from the wafer processing chamber and in fluid communication with the main transfer chamber; containing the activated species using a microwave gas discharge and a magnetic field in the plasma formation regions; introducing the plasma streams to the main transfer chamber; creating a magnetic mirror in the main transfer chamber using a magnetic field; and introducing the species to the process chamber and to a face of the workpiece. Such an apparatus could use multiple energy/excitation sources.

Abstract: A responsive film containing a responsible group occuring a chemical reaction by energy beam is formed on an insulated substrate, and energy beam is irradiated in a pattern, and part of the responsive group is selectively deactivated or activated, and only the remaining portion of the responsive group of the responsive film is coupled with a chemical substance containing metal in a later process, and an ultrafine pattern of metal film is formed.

Abstract: A method of producing a silicon nitride film on the surface of a substrate by thermal decomposition at said surface of a compound of the class ##STR1## wherein R.sub.1 R.sub.2 and R.sub.3 are hydrogen azido, 1 to 6 carbon alkyl, phenyl, or 7 to 10 carbon alkaryl, at least one of R.sub.1, R.sub.2, and R.sub.3 being 1-6 carbon alkyl, phenyl, or 7 to 10 carbon alkaryl, ethyltriazidosilane being uniquely superior, is disclosed.

Abstract: A reactor for laser-assisted CVD has a cylindrical symmetry and includes a high-speed horizontal rotating disk susceptor. The reactor of the invention provides for radiation, preferably UV laser radiation, to be introduced into the reactor radially along an axis. The radiation is constrained to occupy a thin region of space at or immediately adjacent to substrate surfaces upon which deposition is to occur. Preferably the radiation is provided as an annular beam that is reflected uniformly by a conical reflector to provide a relatively thin and uniform sheet of UV radiation that is approximately 0.1 mm to approximately 1.0 mm thick. In addition the reactor provides for Hg vapor, or any other gaseous reactant, to be introduced into the reactor at a same point on the axis as the laser radiation, separately from other reactants, and from a source coaxially disposed and external to the reactor.

Abstract: A ceramic chromium oxide coating produced by applying a conventional chromium oxide coating to a substrate and wholly or partly fusing the conventional chromium oxide coating by subjecting the chromium oxide coating to laser irradiation. The chromium oxide coating can optionally contain silica and/or alumina and less than 1 percent of metal.The chromium oxide coating can be employed for the internal and/or external protection of components in equipment for production and transport of oil and gas under water.

Abstract: A method and apparatus is provided which produces a layer of material on a substrate by extracting ions from a laser ablation plume in a vacuum environment. In a basic embodiment, the apparatus includes a vacuum chamber containing a target material and a laser focused on the target to ablate the material and ionize a portion of the ablation plume. An accelerating grid within the vacuum chamber is charged to extract the ions from the plume and direct the ions onto a substrate to grow the layer. The basic embodiment has produced diamond-like carbon films on a clean, unseeded silicon substrate at deposition rates approaching 20 microns per hour. The diamond-like carbon films produced were of exceptional quality: uniform thickness with a surface roughness about 1 Angstrom; uniform index of refraction within the range of 1.5-2.5; resistivity greater than 40 megs ohms per centimeter; and a hard surface resistant to physical abuse.

Abstract: This invention is directed to a method for producing a smooth and continuous pressure bonded layer of a material such as gold or other precious metal, to a substrate, such as a metal substrate, through the driving force of a pulsed laser. The method comprises the steps of selecting a laser transparent substrate, applying thereto a thin polymeric film, where said polymer is characterized by a high optical coefficient of absorption to the wavelength of said laser. Preferably, such coefficient is at least 2.times.10.sup.4 cm.sup.-1. To the polymeric film, a thin layer or film of the material, such as gold is applied. Thereafter, the laser transparent substrate, containing the dual layers is placed in close proximity to the substrate or workpiece upon which such material is to be deposited.

Abstract: A radiation beam used for selectively exposing a surface is moved in a helical path by means of two oscillating mirrors vibrating about axes that are mutually perpendicular. By maintaining a constant product for oscillating frequency and rotational oscillatory mirror deflection, the level of exposure can be made substantially constant.

Abstract: A component for producing semiconductor devices such as a tube, a boat or the like, comprising a component body made of a silicon carbide material, a silica layer formed on a surface of the body and a CVD coating layer of silicon carbide formed on the silica layer. The silica layer has a thickness ranging between 0.1 and 5 microns. The CVD coating layer has a thickness ranging between 50 to 1000 microns.

Abstract: Film formation without damage on the surface of semiconductor can be established by generating active halogen or active hydrogen by a photochemical reaction, cleaning on the surface of the semiconductor by removing oxide formed thereon by means of the active elements, and continuously thereafter fabricating the film by a photochemical reaction in the same device.

Abstract: The invention provides a method for generating thin layers on a silicon base having a high purity, thermal stability and good dielectric properties wherein non-functionalized organosiloxanes with alkyl groups or alkyl and aryl groups are photochemically polymerized and/or cross-linked by means of pulsed laser radiation with a wavelength of less than 400 nm where the pulse duration is 10 ps to 1 ms, the pulse frequency is 1 Hz to 10 KHz and the energy density is at least 1 J/cm.sup.2 and the irradiation takes placed with one or more pulses. The layers can be used as passivating and insulating layers for semiconductor components and circuits.

Abstract: In a process for fabricating a printed circuit board, a positive resist layer is electrodeposited on a copper clad laminate to ensure that the walls of through-holes in the substrate are completely coated with the resist, or alternatively, a film having a positive resist layer coated thereon is thermocompressed onto the copper clad laminate with the film being in contract with the latter, so as to cover both top and bottom of each through-hole. By subsequent treatments including resist exposure, development, copper foil etching and resist stripping, a high-density wiring pattern can be formed on the substrate in a uniform and consistent way even if through-holes exist in the substrate.

Abstract: A method of depositing diamond-like films produces depositing species from a plasma of a hydrocarbon gas precurser. The plasma is generated by a laser pulse which is fired into the gas and is absorbed in an initiater mixed with the gas. The resulting detonation produces a plasma of ions, radicals, molecular fragments and electrons which is propelled by the detonation pressure wave to a substrate and deposited thereon.

Abstract: A method is described for patterning electroless plated metal on a polymer substrate. A substrate is first coated with a polymer suitable for complexing noble metal compounds. The substrate is then complexed with a noble metal compound, such as containing palladium, selectively irradiated to form the desired conductor pattern, and then etched so that the desired pattern remains. The substrate is subsequently placed in an electroless plating bath to form a metal pattern. Alternatively, before applying the noble metal compound, a substrate immersed in a polymer solution suitable for complexing a noble metal compound can be selectively irradiated to selectively deposit polymer on the substrate, followed by applying a noble metal compound and an electroless plating bath.

Abstract: A method for providing a metal substrate with an impact resistant surface is disclosed. The surface of the substrate is exposed to high intensity laser radiation to melt a spot of the surface. Particles of a material such as WC are injected into the melt.In order to enhance the percentage of particles in the surface, thus increasing the wear resistance, there is a forced reflection of stray particles back toward the melted spot.Further a fixture for holding the substrate, comprising the essential reflection surfaces for achieving the desired back reflection is described as well as a device for carrying out the method.

Abstract: An apparatus for depositing metal thin film on predetermined portions of an underlayer of a substrate by a chemical deposition method with good selectivity, good reproducibility and high deposition rate. Hydrogen atoms are prevented from adhering to portions of the substrate not to be deposited with a metal using a light source for heating only the substrate while cooling other portions exposed to starting material gases or a special gas flow controlling plate or shading plate.

Abstract: Chromium dioxide is deposited as a ferromagnetic layer onto selected portions of a substrate or over the entire substrate. Chromium hexacarbonyl vapor is introduced into a vacuum deposition chamber at e.g. 10 milliTorr and oxygen is introduced at e.g. 15 to 100 milliTorr. A UV laser beam is focused onto the substrate to form the CrO.sub.2 layer photolytically. The CrO.sub.2 layer can also be deposited by RF plasma deposition. This technique can also be employed for depositing MoC.sub.2, WC.sub.2, Mo.sub.2 .phi..sub.3, MoO.sub.2 or WO.sub.2. Magnetic recording or memory devices are produced without the high failure rate typical of the prior art sputtering technique.

Abstract: A thin platinum film which is both conductive and transparent is produced by laser chemical vapor deposition of a suitable organometallic compound, such as allyl cyclopentadienyl platinum. After deposition, the film is annealed to increase the relative abundance of platinum with respect to carbon. The film can be further conditioned by electrically cycling the same in a bath of sulfuric acid.

Abstract: The present invention provides an apparatus and method for laser direct writing of materials onto a receiving substrate using a high power pulsed laser. The invention includes a pulsed laser light source, a receiving substrate, disposed opposite the pulsed laser light source, and an optically transparent source support substrate positioned between the receiving substrate and the pulsed laser light source, wherein a surface of the optically transparent source support substrate facing the receiving substrate has coated thereon a thin film of material to be deposited on the receiving substrate. Laser direct writing using the invention is accomplished by impinging the thin film of material with a pulsed laser light from the pulsed laser light source causing material to be selectively "blown off" the optically transparent source support substrate and deposited onto the surface of the receiving substrate.

Abstract: A method for making a key top of a push button is disclosed, in which a part of a light intercepting paint, which is the uppermost layer at each of displaying portions on the top surface of the key top, is removed so as to expose a displaying ink printed previously under the layer in accordance with the shape of the display portion.

Abstract: The present invention relates to a method of directly forming a thin, oriented layer, or film, of superconducting materials, or compositions suitably mixtures of Perovskite-type superconducting oxides, on a support base, or substrate, by the use of a laser assisted molecular beam epitaxy. The method steps generally comprise forming at least one target comprised of metallic precursors of a superconducting oxide composition and vaporizing at least a portion of the target using a vaporization laser beam to produce a vaporized precursor of an appropriate or desired entrained in a pulsed, rapidly flowing, gaseous atmosphere containing at least one gas reactive with said vaporized precursor composition to form a reacted precursor of a superconducting composition. The reacted precursor composition is then formed into a substantially singular, uniform molecular beam, and deposited on a substrate in the form of a thin layer.

Abstract: The machine of the invention comprises a sealed enclosure (10) in which a microscope objective lens (34) is fixed and receives a laser beam (36) via a thick transparent window (38), the enclosure also containing a reaction chamber (20) constituted by a sealed box having a lid which constitutes a thin transparent window (56) beneath which the thin film object (32) to be treated is placed. Means (72, 80, 74) serve to evacuate the enclosure (10) and the reaction chamber (20) and to convey reactive gas into the reaction chamber. The invention is particularly applicable to treating electronic circuits, hybrid circuits, etc.

Abstract: Surface activated surface alloy electrodes and a process for preparing them high in corrosion resistance and activity, comprising a corrosion-resistant metal selected from, or a corrosion-resistant alloy composed of two or more metals selected from titanium, zirconium, niobium and tantalum, or a corrosion-resistant metal selected from, or a corrosion-resistant alloy composed of two or more metals selected from titanium, zirconium, niobium and tantalum clad with a corrosion-resistant metal selected from, or a corrosion-resistant alloy composed of two or more metals selected from titanium, zirconium, niobium and tantalum, or with any other metal or alloy, rolled or non-rolled, being used as a substrate metal or alloy; an alloy consisting of 20 to 67 atomic % of one or more metals selected from titanium, zirconium, niobium and tantalum, 0.

Abstract: Process for the production--using plasma spraying--of a coated product in which the coating consists of a ceramic fluorocarbon polymer-comprising coating, while between the surface of the product and the ceramic fluorocarbon polymer-comprising coating an adhesion layer completely of metal is applied. The adhesion layer consists in particular of at least two metals reacting exothermally with each other under plasma spraying conditions. In particular, the product to be coated is a thin-welled nickel, seamless cylinder with a wall thickness of 50-220 .mu.m. The invention also relates to an ink transfer roller in which a thin-walled seamless cylinder obtained by the process according to the invention is used.

Abstract: A method for applying novel coatings to substrates is provided. The ends of multiplicity of rods of different materials are melted by focused beams of laser light. Individual electric fields are applied to each of the molten rod ends, thereby ejecting charged particles that include droplets, atomic clusters, molecules, and atoms. The charged particles are separately transported, by the accelerations provided by electric potentials produced by an electrode structure, to substrates where they combine and form the coatings. Layered and thickness graded coatings comprised of hithereto unavailable compositions, are provided.