Abstract: In situ evaporation of selected surface regions or layers of compound semiconductors is accomplished without breaking the growth system environment employing photo induced evaporation enhancement in chemical vapor deposition epitaxy. Intense radiation from an energy source desorbs or causes evaporation of consecutive monolayers of atoms or combined atoms from the surface crystal by thermal evaporation. The desorbed atoms from the growth surface are removed atomic layer by atomic layer in a fairly uniform and systematic manner and may be characterized as "monolayer peeling" resulting in a morphology that is sculpturally smooth and molecularly continuous. In this sense, the method of this invention is analogous to erasing or the etching of crystal material and is the antithesis to laser deposition patterning wherein erasure after growth or reduced rate of growth during growth provide "negative growth patterning".

Abstract: A method of remedying a coating characterized by irradiating a minute defect in the coating due to the adhesion of a dust particle, oil droplet or the like with a laser beam having a cross section generally in conformity with the defect to sublime the dust particle, oil droplet or the like and the coating at the defective portion and form a minute cavity in the coating, filling a repair coating composition into the cavity and curing the composition.

Abstract: The uniformity of a catalyst layer produced by laser decomposition of a catalyst source compound is substantially improved for patterned substrates whose characteristics vary along the path of a conductor line by providing a buffer layer of a metal such as Ti, Cr or Ni over the substrate prior to the laser induced decomposition of the catalyst source compound.

Abstract: Technique for producing hollow composite articles utilizing vapor deposition. Fibers, wound around a supply reel, are fed to a take-up reel, while glass matrix is deposited on the fiber substrate via a vapor deposition process. The layers of fiber/matrix on the take-up reel are heated to fuse the composite, producing a glass matrix composite.

Abstract: A method of modifying a surface of a body such as a semiconductor body is described in which a beam of electromagnetic radiation is directed towards the surface so that the electromagnetic radiation is incident on the surface at or near the Brewster angle, the electromagnetic radiation incident on the surface preferably being so polarised that the electric vector of the electromagnetic radiation lies in the plane of incidence of the electromagnetic radiation at the surface.

Abstract: The temperature of a surface undergoing a radiation assisted thermally driven process is sensed by observation of the thermal emission from that surface and used to control the process. In a preferred embodiment, the blue edge of the thermal emission spectral distribution is detected to determine the surface temperature of a workpiece during a process such as laser-assisted chemical vapor deposition, and used to control this temperature. The temperature measuring system has means for focusing workpiece thermal emission and defining the field of view, a spectrometer to separate shorter wavelength light from other spectral components of the thermal emission, and a photon-counting system to detect the shorter wavelength light and generate a surface temperature signal. Systems to determine surface temperature at a spot and along a line have an optical prism to disperse the thermal emission into component wavelengths, and a multichannel photon-counting detector comprised of an intensified photodetector array.

Abstract: A laser induced direct writing pyrolysis of a refractory metal or metal silicide on substrates is described. Typical reactants comprise flowing WF.sub.6, MoF.sub.6 or TiCl.sub.4 with SiH.sub.4 and an inert gas, such as Argon. A preferable substrate surface is a polyimide film. The refractory metal film may comprise low resistivity W, M, or Ti, or silicides thereof, having a predetermined resistance depending on the relative ratio of reactants. The invention is useful, inter alia, for repair of defective circuit interconnects, and formation of interconnects or resistors on substrates.

Abstract: Depopsition of a boron nitride film is carried out by introducing decaborane and dry nitrogen or ammonia into a plasma-assisted chemical vapor deposition chamber. The nitrogen or ammonia partial pressure should provide an excess over the decarborane pressures for example 200 milliTorr of N.sub.2 or NH.sub.3 and 50 MilliTorr of B.sub.10 H.sub.14. Other film layers can also be produced starting from decaborane.

Abstract: In the production method of a semiconductor device, a connection layer is formed on an insulating layer according to two steps of irradiating, in the atmosphere of a reaction gas, a region in which the connection layer is to be formed selectively by light having a wavelength in a range of from 200 to 1000 nm, and depositing selectively a connection layer forming substrate by a CVD method in the light irradiated region until a desired thickness of the substance is obtained.

Abstract: A thin diamond film is prepared by immersing a substrate in a liquid conting carbon and hydrogen and then subjecting the substrate to at least one laser pulse.

Abstract: Patterned films of superconducting materials are formed using focused beam techniques, such as electron beam, ion beam, and laser beam techniques. A solution comprising the neodecanoates of yttrium, barium, and copper is formed which is soluble in an organic solvent. The solution is spun onto an appropriate substrate. The solution is dried and subsequently selectively exposed using focused beam techniques, so that the exposed regions are no longer soluble in the organic solvent. The solution is immersed in the organic solvent, so that the only the exposed, insoluble regions remain on the substrate. The solution is then heated at a temperature sufficient to decompose the neodecanoates, about 500.degree. C., and then heated again, preferably using rapid thermal annealing techniques, to promote recrystallization and grain growth of the remaining metal oxides. The resulting patterned film exhibits superconductive characteristics.

Abstract: An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light source for photo CVD or a pair of electrode for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light or plasma evenly throughout the surfaces to be coated.

Abstract: Diamond films are deposited at substrates below temperatures of 400.degree. C. by chemical vapor deposition using a high powered pulsed laser and a vapor which is an aliphatic carboxylic acid or an aromatic carboxylic anhydride.

Abstract: Improved processes are described for the deposition of Cu and group IB metals such as Ag and Au. These processes include thermal CVD, photothermal depositions and photochemical deposition. The gaseous precursor which leads to successful deposition of high quality films at low temperatures includes a cyclopentadienyl ring, a two electron donor ligand, and the group IB metal in a +1 oxidation state. In addition, derivatives of the cyclopentadienyl ring can be used where the substituents on the ring include those selected from alkyl groups, halide groups, and psuedohalide groups. In addition, the two electron donor ligand can be selected from the group consisting of trivalent phosphines, amines and arsines. A representative precursor for the deposition of Cu is triethylphosphine cyclopentadienyl copper (I).

Abstract: A spraying material is fed to and melted in a high energy density zone formed by converging a laser beam therein with a converging lens or a mirror, and the molten spraying material is rendered into particles by jetting a carrier gas stream such that the axis thereof crosses the axis of the laser beam in the high energy density zone to blow the particles of the molten spraying material against a base surface disposed to be normal to the carrier gas stream axis beyond the high energy density zone so as to form a film of the spraying material on the surface.

Abstract: An improved stereolithographic process is provided in which the formation of a thin walled three-dimensional object in a reservoir of liquid ultraviolet-curable ethylenically unsaturated material using a support is positioned immediately beneath the upper surface of the liquid reservoir with that upper surface being exposed to ultraviolet light in a pattern to solidify the liquid at and near the upper surface in a series of cross-sections of the desired three-dimensional object, one atop the other. In this way there is formed a series of superposed layers which adhere to one another to build the desired three-dimensional object within the liquid reservoir. The improvement comprises, stopping the exposure at any portion of the surface in the formation of said layers and then repeating the exposure at least once again in the production of each surface layer so that the strength and solvent resistance of the formed object are increased and its distortion is minimized.

Abstract: A technique for generating high resolution resistor or conductor patterns on uneven surfaces by focusing a CO.sub.2 laser beam to locally render insoluable suitable thick film resistor or conductor material that has been uniformly coated onto a substrate and oven-dried to remove organic coating solvents. Patterns are generated by scanning the laser beam across the coated substrate, and the coating is hardened and adheres to the substrate where it has been exposed by the laser beam.

Abstract: In an optical data storage medium comprising a resin, substrate, a primary coat formed thereon and a recording layer of a dye decomposable by a laser beam formed on the primary coat, said primary coat is a silicone resin layer whose surface had been subjected to a plasma treatment. The primary coat prevents the substrate from attack by solvent for forming the recording layer, and enables the recording layer to be uniform in thickness with good adhesion.

Abstract: A contactless method for knurling thermoplastic film to improve its winding characteristics is disclosed. A preferred embodiment employs an ink jet printer to intermittently deposit ink upon at least one margin of the moving film surface. A second preferred embodiment employs a laser to intermittently modify at least one margin of the moving film surface. The invention eliminates the problem of stress gradient during web transport prior to winding which is inherent in contact knurling and particularly troublesome in the manufacture of high modulus, relatively thin thermoplastic films.

Abstract: The present invention provides a method for applying a hardface alloy coating on a metal substrate concurrently with a nitriding procedure so that the hardface coating is deposited and nitrided in one step. The deposition of the metal hardface coating is conducted in an atmosphere of nitrogen under nitriding conditions. The single step of metal deposition and nitriding is made possible by using a hardface alloy composition containing 20-75% niobium, 5-35% titanium and 10-60% tungsten.

Abstract: A method of making printed circuit boards, particularly 3-Dimensional circuit boards, wherein a surface layer of micron sized hollow spheres, beads or spacers are ruptured or fractured in a pattern defining the electrical circuit. The circuit pattern is thermally sprayed with molten copper particles. The molten copper particles shape themselves to the nooks, crannies and undercuts of the fractured spheres or beads to mechanically lock the electrical circuitry to the board. The current carrying capacity can be adjusted by the thickness of the sprayed metal. The overspray does not adhere to smooth non porous surfaces adjacent the fractured spheres or beads.

Abstract: A method is provided for epitaxially growing single crystalline silicon on a silicon substrate (10) from a silicon-bearing gas (26) at a temperature below the pyrolytic threshold of the gas and at temperatures below those normally required for epitaxial growth. An oxidized silicon substrate (10) is fluorinated (equation 2, FIG. 2) to replace the silicon-oxide layer with an adsorbed fluorinated layer. The substrate is placed in a laser photo-CVD reactor chamber (20), the chamber is evacuated to a sub-UHV level of 10.sup.-3 to 10.sup.-7 Torr, the substrate is heated to 570.degree. C., hydrogen gas (24) is introduced into the chamber, and excimer pulsed ultraviolet laser radiation (32 from laser 12) is applied through the hydrogen gas to impinge the wafer substrate.

Abstract: A superconducting oxide film is prepared by a method of seeding formation and heat treatment which comprises depositing a layer of a metal-oxide precursor on a predetermined substrate, forming a seed of a predetermined superconducting phase only in a locally limited region of the metal-oxide precursor at a boundary surface to the substrate by means of a solid-state reaction triggered by pulsed energy radiation, and then at least partially converting the metal-oxide precursor into the desired superconducting metal-oxide phase by a heat treatment in the oxygen atmosphere at a temperature below 800.degree. C.

Abstract: Light from a Q-switched laser passes through a metal-containing gas and through a field oxide of an integrated circuit structure. The laser light is preferentially absorbed by an underlying substrate. The substrate, but not the oxide, is heated above a threshold temperature that allows rapid chemical vapor deposition of metal through a relatively deep via hole in the oxide. The oxide has low thermal conductivity. The upper portions of the via hole walls are not heated enough to allow deposition of metal thereon. The via hole therefore can be uniformly filled by deposition of the metal on the bottom of the via hole, with no obstruction or shadowing from buildup of deposited metal on the upper wall portions of the via hole.

Abstract: An equipment for manufacturing semiconductor devices has: a reaction chamber in which a substrate to be processed is placed; means for evacuating the reaction chamber; means for introducing a reaction gas into the reaction chamber; means for applying polarized light to the surface of the substrate for the purpose of depositing a thin film on the surface of the substrate using a photochemical reaction between the light and the reaction gas; and means for adjusting the direction of polarization of the light so as to be substantially perpendicular to the longitudinal axis of a stepped circuit pattern present on the surface of the substrate for the purpose of flattening the circuit pattern.

Abstract: MOVPE growth and photoetching are integrated into a unified sequence which is carried out without removing a workpiece from a MOVPE reactor. Growth may be carried out before, after or before and after the etching.To prevent pattern broadening by diffussion of the active species the substrate is preferably protected by a fugitive coating which is removed by the illumination. Native oxide coatings are particularly suitable for InGaAsP substrates. These are conveniently applied for exposing to substrate to 20.degree./o O.sub.2 +80.degree./oN.sub.2 for about 3 minutes at 450.degree. C.

Abstract: A gold(III) acetate is formed by dissolving gold(III) hydroxide in glacial acetic acid. This solution containing gold(III) acetate can be used to form a gold-containing film by heating it above about 60.degree. C. and then casting it to form a film. Gold can be deposited from the film by heating it to about 175.degree. C. to decompose the film. In this manner, a line or pattern of conductive gold can be formed by heating selected portions of the film with a laser.

Abstract: A foam plastic substrate has an image formed on its surface by differential ablation by a laser. A composition is applied to the surface in the shape of the image to be formed and has an ablation rate different to that of the foam substrate. After irradiation of the surface, the image is formed in relief on the surface.

Abstract: ArF excimer laser process is used to selectively dehydrogenate patterns on heavily hydrogenated silicon nitride and silicon oxynitride thin films. Excitation at 193 nm with a repetition rate of 100 Hz for 30 seconds duration, with a pulse energy on the order of 100 mJ/cm.sup.2, produces a selective dehydrogenation mechanism, opening a UV transparent window. A selective window opening allows a semiconductor device that is sensitive to UV radiation to be passively programmed, dependant on the locations of the windows opened.

Abstract: A mercury compound such as mercury telluride or mercury cadmium telluride is deposited upon a substrate by chemical vapor deposition, with dissociation of the organic compounds accelerated by laser energy. The mercury-containing compound is preferably divinylmercury, which dissociates under intense light of 248 nanometers wavelength to deposit mercury in combination with the codeposited element. The laser-assisted chemical vapor deposition is accomplished at 100.degree. C. to 195.degree. C., preferably 165.degree. C., without the deposition of carbon contaminants.

Abstract: A method for forming hybrid semiconductor/superconductor circuits employs masking a substrate slab into regions to have superconductor devices therein, depositing superconductor ceramic compound materials within said regions, masking the substrate slab upper surface outside of the regions with reflective material, and heating the superconductor material to a temperature desired for firing or sintering the material. The semiconductor slab outside of the superconducting region is maintained at a relatively low temperature by reflection of the incident energy by the reflective material. After heating of the superconducting material to its ceramic form, the reflective material is removed and the remainder of the semiconductive circuit is processed in a conventional manner.

Abstract: A method for adhesively bonding a first body to a second body, the first body comprising a non-metallic substrate, such as a piece of rubber, or comprising a non-metallic substrate and a filler therein, such as a piece of fiberglass reinforced plastic, the second body comprising any type of substrate, such as a piece of glass, plastic or metal. The first body is pretreated by placing it in the path of an energy beam, such as a laser beam, to form projections on the non-metallic substrate by evaporation of the non-metallic substrate of the first body, or to expose filler by evaporation of the non-metallic substrate of the first body. The second body can be untreated, pretreated as above or pretreated another way, such as by solvent washing or sandblasting. An adhesive is then coated on the pretreated area of the first body and the first body adhered to the second body. The cured adhesive interlocks with the projections and/or the exposed filler to produce a stronger bond.

Abstract: This invention discloses a method of forming a conductor on a copper conductor on a semiconductor interconnection surface. A paste of copper material is formed over at least a portion of the semiconductor interconnection surface. A laser beam is directed against the paste. The laser beam is moved along the paste in accordance with a pattern to define the conductor. The laser beam fires and sinters the paste to form the conductor. The remaining paste which remains unfired is removed. The surface and the fired paste is then maintained in an inert atmosphere while heated to a sufficient temperature to provide a high quality copper conductor on the surface.

Abstract: An information storage medium includes a substrate, and a recording layer formed on the substrate, which contains carbon, hydrogen, and Te. The recording layer has an amorphous state wherein no peak representing the presence of a crystal is confirmed by X-ray diffractometry, and an activation energy is 1.5 eV or more, which is required to transform the state of the recording layer from the amorphous state into a crystalline state wherein peaks each representing the presence of a crystal are confirmed by X-ray diffractometry.

Abstract: A laser based method for forming a superconducting oxide layer on various substrates is disclosed. The method comprises applying a dry salt precursor to the surface of a substrate and the heating the substrate by a laser beam which causes a superconducting oxide layer to be formed on the substrate without post annealing. An alternative embodiment comprises application of a salt solution precursor on the substrate surface. After the solution evaporates, the substrate is heated through laser energy and a superconducting oxide layer is formed on the substrate.

Abstract: A method for forming a deposited film by forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si.sub.n H.sub.m wherein n is an integer of 1 or more, and m is an integer of 2 or more in a chamber housing a substrate therein and forming a deposited film containing silicon on said substrate by excitation of said compound to effect decomposition or polymerization thereof comprises introducing a gaseous radical polymerization initiator into said chamber and utilizing light energy, thereby exciting said compound to effect decomposition or polymerization thereof.

Abstract: A method for producing ferromagnetic powder comprising metal oxide magnetic powder particles and a magnetic metal layer of at least one metal selected from the group consisting of iron, cobalt and nickel which layer is formed on a surface of the powder particle and has a magnetic easy axis of magnetization in substantially the same direction as that of the powder particle, which has improved coercive force and saturation magnetization, comprising irradiating with light a liquid medium dispersion containing the metal oxide magnetic particles, a reducing agent, and at least one metal ion selected from the group consisting of iron ion, cobalt iron, and nickel iron.

Abstract: A semiconductor producing apparatus for use in photochemical vapor deposition for forming various types of film on a substrate at a low temperature as a first reaction gas excited and decomposed by a laser beam and a second reaction gas converted into a plasma state by a plasma generator react with each other in a reaction chamber in which a substrate is mounted. Two kinds of electrodes are provided in upper and lower positions in the reaction chamber opposing each other. The upper electrode is connected to a high-frequency power source and the lower electrode is used as a common electrode on which the substrate is mounted to control film forming speed, while an ultraviolet light source for irradiating the interior of the reaction chamber with ultraviolet rays is provided to obtain a dense film.

Abstract: Fine line superconductors of yttrium-barium-copper were formed on <100> strontium titanate substrates by the completely non-vacuum techniques of metallo-organic deposition in selective laser pyrolysis. Lines 125 micrometers wide were written in a film of metal neodecanoates, using an argon laser, prior to complete pyrolysis. An organic dye which absorbs selective laser light wavelengths, is added to the metallo-organic solution comprising the metal neodecanoates prior to laser exposure, so as to enhance absorption of the laser light at the regions of the metallo-organic film which are subsequently exposed to the laser light. The increased light absorbance at the exposed regions, results in at least partial pyrolysis of the exposed metal neodecanoates. Regions of the metallo-organic film not exposed to laser pyrolysis is developed away using a xylene wash.

Abstract: A method of ablating fluoropolymer composite materials is presented wherein it has been found that small holes (less than 100 .mu.m) can be formed in fluoropolymer composite laminate materials using UV lasers. The resulting holes can be used to produce vias and plated through-holes having smooth side walls with little or no debris or residue remaining in the holes and minimal damage to the polymer. Thus, the vias and plated through-holes can be plated without further cleaning processes. In addition, the holes are formed at a relatively fast rate.

Abstract: A method metallurgically bonds a thin film of easily amorphized material on a metallic substrate having a large thermal conductivity, and then irradiates all or selected portions of the thin film with a pulse laser. The irradiated portions become amorphous by rapidly heating and cooling. Therefore, a whole surface which is an amorphous layer or a part of a surface which is an amorphous layer is obtained. In the latter, a porous amorphous metal layer is obtained by subsequent acid elution and by removing the non-amorphous part.

Abstract: A system and method for improved conductive circuit patterning utilizing laser ablation is disclosed. In an embodiment, a substrate, which has an electroless conductive layer plated thereon, is heated to a predetermined temperature for a predetermined time to form an oxide layer upon the conductive layer. The oxide layer, due to its non-absorptive properties, is more easily ablated than the conductive layer. Hence, the overall processing time for circuit patterning is significantly reduced.

Abstract: Catalytically inert films comprising complexes of polymer with a compound of a Group 1B or Group 8 metal at unusually low proportions of metal can be selectively activated, e.g. to provide a catalytic surface. Such films can be advantageously activatable to electroless deposition, e.g. of oxidation resistant layers of copper.

Abstract: A processing apparatus and method utilizing a single process chamber for deposition of silicon nitride with a silicon source, a remote plasma including a nitrogen source, additional ultraviolet energy coupled into the process chamber to provide additional molecular excitation of the silicon source.

Abstract: Diffusion bonding of aluminum alloy objects of different sizes and shapes may be greatly improved when the surface of the object is exposed to a thermal spray source which deposits fine metal particles on the surface. Rapid quenching of solidification occurs at the surface. Such treatment results in the formation of finer grains at the surface which enhances the strength of a diffusion bond.

Abstract: In a photoelectric conversion device manufacturing method which includes at least a step of forming a non-single-crystal semiconductor layer, a transparent or nontransparent layer, or a laminate member composed of transparent and nontransparent layers by patterning with a laser beam, a laser beam which has a short wavelength of 600 nm or less, a spot diameter of 3 to 60 nm and a width of 50 nano-second is used for the patterning.

Abstract: This invention relates to a method for controlling or limiting the formation of an oxide layer on a metallic substrate such as nickel or nickel alloy, over which a polymeric plating resist has been placed, then selectively removed by a focussed excimer laser beam applied thereto. The method comprises the steps of applying a carbon-containing polymeric plating resist to a metal substrate having an oxide layer thereon of a thickness between about 20 to 40.ANG.. Thereafter, a selected area of said resist coated metal substrate is subjected to a single shot from an excimer laser to ablate said resist from within said area, wherein the laser energy is absorbed primarily at the metallic substrate and the energy density of the said laser is in excess of that required to ablate so as to produce a thin uniform layer of oxide over said substrate, said oxide layer, principally nickel oxide, having a thickness no greater than about 7.ANG..

Abstract: In a photo-CVD apparatus, a holder on which an article is held is provided in a main chamber. The holder is moved in a predetermined direction to coincide a predetermined point of the article with a imaging point of light radiated from a light source, so that a thin film is grown on the predetermined point of the article. A process chamber is defined on the holder of the main chamber is accordance with the separation of a seal wall. Process gas is supplied to the process chamber for the growing of the thin film on the article, while inert gas is supplied to the remaining portion of the main chamber. A gas pressure of the main chamber is slightly greater than that of the process chamber, so that the process gas is prevented from flowing to the main chamber. For this structure, a size of the process chamber can be small, so that a consumption of process gas is decreased.

Abstract: A method for producing full-surface or partial metal films on a substrate includes placing a coating on a substrate. The coating is irradiated sheetwise with a laser to form the metal films.

Abstract: A method for providing a circuit pattern on an insulated substrate that has improved adherence thereto. By providing an electroless conductive layer of a predetermined thickness on the substrate and thereafter exposing the substrate to an ablative laser beam, the resultant conductive lines are stronger than those provided by previously known techniques.