Abstract: A compound of a metallic element, e.g., tetramethyl lead, trimethyl bismuth, etc. in a vapor phase can be efficiently decomposed in a chain reaction of a very large apparent quantum yield to form extremely finely divided high-purity particles of the metallic element by the irradiation with actinic rays, e.g., laser beams, when the concentration of the metallic compound in the vapor phase is at least 1.times.10.sup.15 molecules per cm.sup.3 and the energy density of the actinic rays is at least 1.times.10.sup.-3 Joule per cm.sup.2.

Abstract: A method for the production of semiconductor devices comprising introducing source gases, etching gases or source molecules into a substrate to grow crystalline layers on said substrate or to etch said substrate, resulting in a semiconductor device, wherein said method further comprises applying a given electric potential to said substrate; applying an electric potential that is different from that of said substrate to an electron-beam irradiator disposed directly above said substrate; and irradiating said irradiator with electron beams from an electron-beam emitting means, whereby said substrate is irradiated with the secondary electron beams generated from said irradiator and/or with the electron beams transmitted through said irradiator.

Abstract: A semiconductor processing method is provided for growing a semiconductor film from a semiconductorbearing gas on a substrate at a substrate temperature below the pyrolytic threshold of the gas. The gas is photodissociated to a collisionally stable species which migrates and travels in the gas phase the entire distance to the substrate, surving hundreds of collisions, and is pyrolyzed at the surface of the substrate and forms several monolayers of semiconductor material which is substantially more catalytically active than the substrate and which subsequently catalyzes decomposition of the gas.

Abstract: A method for growing a patterned superconductive oxide film of the general formula XZ.sub.2 Cu.sub.3 O.sub.6+x is disclosed, wherein X is yttrium, a lanthanide or a mixture thereof, Z is one or more alkaline earth elements and x is a number between 0 and 1. This patterned superconductive oxide film of XZ.sub.2 Cu.sub.3 O.sub.6+x is formed by preparing an aqueous solutuion of the nitrates of X, Z and Cu in the X:Z:Cu stoichiometric ratio of 1:2:3; spraying the aqueous nitrate solution onto a heated substrate to form on the substrate a thin film of XZ.sub.2 Cu.sub.3 O.sub.y material, wherein y is an undefined number; spot-heating preselected portions of the thin film in an oxygen-rich atmosphere to convert the preselected portions into the patterned superconductive oxide film of XZ.sub.2 Cu.sub.3 O.sub.6+x ; and removing the unheated thin film of XZ.sub.2 Cu.sub.3 O.sub.y material with a solvent.

Abstract: An apparatus for photochemically forming a film on a substrate using a photo-induced chemical vapor deposition method comprises an optical lens through which a light beam is radiated to a reactive atmosphere gas to deposit and grow a film uniform in thickness on a substrate.

Abstract: The surfaces of solid ionic substrates are etched by a radiation-driven chemical reaction. The process involves exposing an ionic substrate coated with a layer of a reactant material on its surface to radiation, e.g. a laser, to induce localized melting of the substrate which results in the occurrance of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic salt substrates, e.g., a solid inorganic salt such as LiNbO.sub.3, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

Abstract: Compact discs are continuously mass produced by continuously rotating a master roller about whose periphery a plurality of optical disc patterns are sequentially arranged in order to form inverse patterns on an elongated film fed to the roller at successive contact locations spaced apart of one another lengthwise of the film during each rotation. Each optical disc has a metallized layer which is protected from damage by the provision of sheets of non-negligible thickness.

Abstract: A method for fabricating graded refractive index (rugate, optical filters as well as complex rugate filters having prespecified refractive index verses thickness profiles is disclosed. A plurality of at least two different compatable thin film deposition source components of different refractive index, which are stoichiometrically combinable in variable proportion, such as silicon nitride and silicon oxide, or zinc sulfide and zinc selenide, are used to form a thin film material with a refractive index which varies as a function of the proportions of the components. Each source component is separately laser flash evaporated and codeposited on a substrate to form a coating while monitoring the physical and optical thicknesses of the coating, to allow adjustment of the respective laser flash evaporation rates of the source components.

Abstract: A method for maskless patterning and etching of metals is disclosed. The method comprises the steps of providing a metal, forming a passivating layer of an oxide or nitride upon the surface of the metal, exposing the metal to a halogenous atmosphere, while patterning the metal using a directed energy beam to selectively replace the oxides or nitrides with halides, and heating the patterned metal while exposing it to an etchant to etch regions located below the halogenated surfaces leaving the remaining passivated regons intact.

Abstract: The exposure component (10) of a photo-etching system for a semiconductor wafer (28) includes a laser (12) that shines coherent light through an expansion lens (14) and then a contraction lens (16) to supply a spherically convergent beam of light through a lensless-Fourier-transform hologram (22) and onto the semiconductor wafer (28). The wafer (28) is located tangent to a hemisphere centered on the hologram (22) that has the focal point (26) of the convergent spherical beam at the middle of its curved surface. This forms a reduced version of the source image from which the hologram (22) was formed and achieves feature sizes significantly smaller than those attainable with conventional mask-type systems employing light of the same wavelength.

Abstract: The portion of the blade (1) to be coated has pure vanadium powder deposited thereon and the temperature of the powder is raised to a temperature which is slightly higher than the melting point of vanadium. Thereafter, a powder mixture is deposited on the vanadium layer, said powder comprising about one third by weight of titanium carbides, titanium nitrides, or titanium borides, which are bonded by a martensitic or austenomartensitic stainless steel. The powder is then raised to a temperature which is greater than its melting temperature and less than the melting temperature of vanadium. A titanium alloy blade it includes, on its periphery, a coating layer (5) which is at least 1 mm thick and which includes about one third by weight titanium carbides, or titanium nitrides, or titanium borides bonded by a martensitic or austenomartensitic stainless steel, said coating layer covering an under layer (6) of vanadium having a thickness lying between 0.5 mm and 1.5 mm.

Abstract: A method and apparatus for improving the integrity of metal plated composites is disclosed. Plating improvements are achieved by first irradiating a nickel plated substrate, prior to application of a noble metal plating layer, to smooth any surface discontinuities or irregularities. Excimer laser pulses, having a duration of less than 100 nanoseconds, are employed to partially liquefy the upper surface of the nickel plating on the substrate. This invention is compatible with conventional plating processes, such as electroplating.

Abstract: Herein disclosed is a process for forming a dispersion alloy layer on a metallic base. The powder of an alloy system, which will separate into two or more multi-liquid phases at a temperature equal to or higher than its melting point and will solidify, when quenched, with its individual liquid phases being separate and in which the ratio of the minimum to the maximum specific weight its individual liquid phases is 0.3 or higher, such as the powder of any alloy system of Cu-Ni(15%)-Fe(8%)-Si(3%)-B(1.5%) is applied to a metallic base. The powder thus applied is then melting and agitated while being irradiated with a laser beam oscillated. The agitated melt of the powder is then quenched to solidify with the movement of the laser beam thereby to form on the metallic base the dispersion alloy layer in which the solid particles of at least one of those phase such as silicide particles are dispersed in the matrix of the remaining one of the phases.

Abstract: A cost-efficient method for producing dimensionally precise and high-grade heat-resistent structured layers by applying a single coating of a radiation-sensitive soluble polyether-based photopolymer in the form of a layer or foil on a substrate; irradiating the layer or foil through a negative with actinic light or by guiding a light, electron, laser, or ion beam; removing the nonirradiated layer or foil portions; and subsequent optional annealing, wherein the photopolymer comprises an addition product of an olefin-unsaturated monoisocyanate and a polether having at least one hydroxyl group. The layers provided according to the invention can withstand the thermal and mechanical stresses of dip soldering process, and protect circuit surfaces effectively and durably against moisture and corrosion; they are therefore suitable in particular as solder resist and insulating layers in microconductor technology.

Abstract: A surface treatment method, wherein gas particles are applied to a solid surface of a substrate to treat the same surface, comprising the step of applying to the gas particles the narrow line width laser light capable of exciting or decomposing only such gas particles that have velocities in a predetermined range.

Abstract: A method of forming at low temperatures silicon- and nitrogen-containing ceramic or ceramic-like coatings for the protection of electronic devices. The coatings are produced by the ceramification at temperatures of, or below, 400 degrees Centigrade of preceramic silicon nitrogen-containing polymer coatings deposited from a solvent solution. The coatings are useful for planarizing the surfaces of electronic devices and for passivation.

Abstract: Imaged microcapsule-coated paper, e.g. pressure-sensitive copying paper, is produced by imaging paper by means of laser energy and then applying a coating of microcapsules over the image. The image may be a manufacturer's name, logo or trademark, and may be applied at high speed on the paper machine on which the paper is produced or on the coating machine used to apply the microcapsule coating.

Abstract: This invention is concerned with a process for the surface treatment of a rubber containing ethylenic unsaturation by coating the rubber with an alkyl halide and exposing the thus coated rubber surface to ultraviolet-visible light. Such modification produces a rubber article having reduced air permeability, enhanced ozone protection and improved release properties.

Abstract: A method of plating a pattern of metal (e.g. copper or nickel) on a dielectric surface, i.e. surface of a dielectric material such as a synthetic resin or ceramic. The method comprises the preliminary step of masklessly treating the dielectric surface to selectively activate preselected areas thereof so that the dielectric surface in contact with a priming solution becomes catalytic, and thereby receptive to electroless metal deposition, selectively at those areas. The treated dielectric surface is contacted with an electroless plating solution to allow metal therefrom to auto-reductively deposit selectively at those catalized areas, thereby forming the pattern of metal desired on the dielectric surface.

Abstract: Articles having a substrate coated with a oriented polymer having polar monomer units wherein the monomer units and main polymer chains originate from cyclic monomers polymerized by ring opening polymerization through impinging light on the coated surface.

Abstract: This invention relates to materials produced by diluting in a solvent a platinum or rhodium catalyzed preceramic mixture of a hydrogen silsesquioxane resin. The preceramic mixture solvent solution is applied to a substrate and ceramified by heating. One or more ceramic coatings containing silicon carbon, silicon nitrogen, or silicon carbon nitrogen can be applied over the ceramified SiO.sub.2 coating. A CVD or PECVD top coating can be applied for further protection. The invention is particularly useful for coating electronic devices.

Abstract: A thin film semiconductor device is formed by preparing a substrate, forming a pattern of metal thin film on the substrate, forming an insulating layer on the metal thin film, and forming a pattern of a semiconductor thin film active layer, which is self-aligned to the pattern of the metal thin film, by laser CVD.

Abstract: Disclosed is a method of casting a shape. A laser or electron gun is directed at a fusible powder in a fluidized bed. The beam melts the powder and the melted powder fuses and solidifies on a surface to form the shape. Also disclosed is apparatus for casting a shape. The apparatus includes a fluidized bed containing a fluidized powder, a surface within the bed on which the shape is cast, an electron beam or laser directed at the surface, which has an energy sufficient to fuse the powder, means for controlling the level of the powder in the fluidized bed relative to the surface, and means for controlling the horizontal position of the surface relative to the beam.

Abstract: Unwanted build-up of the film deposited on the transparent light-transmitting window of a photochemical vacuum deposition (photo-CVD) chamber is eliminated by flowing an etchant into the part of the photolysis region in the chamber immediately adjacent the window and remote from the substrate and from the process gas inlet. The respective flows of the etchant and the process gas are balanced to confine the etchant reaction to the part of the photolysis region proximate to the window and remote from the substrate. The etchant is preferably one that etches film deposit on the window, does not etch or affect the window itself, and does not produce reaction by-products that are deleterious to either the desired film deposited on the substrate or to the photolysis reaction adjacent the substrate.

Abstract: A process for coating a workpiece with a ceramic material comprising the steps of axially advancing a cylindrical ceramic rod of a ceramic material relative to a workpiece while rotating it about its axis in a vacuum, to feed the ceramic rod into an energy beam for evaporation. The rate of feeding of the ceramic rod depends on the rate of deposition of the evaporated ceramic material on the workpiece.

Abstract: A conductive or semiconductive pattern of a metal sulfide or selenide such as copper, cadmium, cobalt or nickel sulfide, is provided on a substrate. The pattern may have a resistivity in the range of 1 to 10.sup.6 ohms per square. It is formed by coating the surface with a solution containing a salt of one of the metals which is capable of being converted to a divalent metal compound, a sulfur group donor such as thiourea, and a solvent such as methanol or water. The solution is dried, and then selected portions of the coated surface are irradiated with a laser beam. This thermally converts the irradiated metal salt into a metal sulfide. The unreacted solution is then washed from the substrate to leave a conductive pattern. The desired conductivity of the pattern can be obtained by selecting the proper metal salt, concentration of salt in the solution, and the energy of the radiation.

Abstract: Thin-film capacitors are produced with laser chemical vapor deposition technology on a substrate, which is preferably the substrate of an integrated circuit, by forming alternating layers of electrodes and dielectric.

Abstract: A material to which there is applied a polyamic acid ester obtained from aromatic tri-or tetracarboxylic acids which contain benzophenone groups and organic diamines is suitable for producing protective coatings or relief images. After it has been irradiated, the material can be subjected to a heat treatment to convert the polyamic acid ester into the polyimide.

Abstract: A vertical magnetic recording medium excellent in durability and recording property in which a first magnetic film comprising Co--Cr or Co--Cr--W as the main ingredient is formed on a substrate and the second magnetic film comprising Co--Cr--W--C as the main ingredient is formed on the first magnetic film, as well as the production process therefor are provided.

Abstract: A photo CVD apparatus for use with a reactive gas is disclosed, which includes a reaction chamber, a second chamber for a light source, separated from the reaction chamber by a transparent window. There is also a conduit connecting these two chambers and a means for preventing deposition by the reactive gas on the light source chamber walls, such as heating, is provided. Examples of this technique's applicabilities are given with such gases as Si.sub.2 H.sub.6 or Al(CH.sub.3).sub.3 and ammonia.

Abstract: A noble metal coating method of coating an underlying metal with a noble metal comprises the steps of feeding a mixture comprising the noble metal, an oxide film removing agent, such as borax, and a binder for binding the metal and the agent to each other to a portion of the underlying metal that is to be coated and irradiating a laser beam onto the mixture on the underlying metal.

Abstract: The present invention is concerned with methods of converting a single resist layer into a multilayered resist.The upper portion of the single resist layer can be converted into a dry-etch resistant form. The conversion can be a blanket conversion of the upper portion of the resist layer or can be a patterned conversion of areas within the upper portion of the layer. A patternwise-converted resist can be oxygen plasma developed.The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.

Abstract: A process for preventing crack formation in nickel alloy substrates having a gamma-prime phase includes providing a substrate comprised of a nickel alloy having a gamma-prime phase. A portion of the substrate is irradiated with a laser beam and thereby forms a molten pool of the alloy. A supply of coating particles are dispersed within the pool, the particles are comprised of a nickel alloy having gamma-prime forming constitutents. Rapid relative motion between the beam and the pool is effected so that the pool rapidly solidifies and thereby minimizes the formation of gamma-prime therein and adjacent thereto.

Abstract: A controlled gas environment is provided against a surface area of a semiconductor wafer for performing processes on the area in the fabrication of integrated circuits thereon, including processes of deposition, impurity implantation, etching, ablation, and other radiation induced chemical processes involving the gas atmosphere by maintaining a continuous gas flow over the area and a portion of the surrounding area of the wafer surface covered by an enclosure that is suspended on the surface on a film of the flowing gas, the pressure, temperature and composition of the gas atmosphere against the surface area being controlled to meet the requirements of each processing step and/or to carry away particles while the gas seal is maintained.

Abstract: Improvements in a method for performing a monocrystallizing operation through the application of energy beams upon a non-monocrystalline thin-film of non-crystalline or polycrystalline material formed on a non-crystalline insulating film. The resulting superior monocrystalline thin-film has a crystal direction coinciding with that of the monocrystalline silicon base-plate and is formed on the insulating film even if the insulating film is as thick as 4 .mu.m. The thin-film is sufficiently covered between the active layers of a three-dimensional circuit element on the monocrystalline silicon base plate.

Abstract: The present invention provides magnetic recording compositions containing magnetic particles and a photohardenable composition wherein the photohardenable composition contains a free radical addition polymerizable or crosslinkable compound and an ionic dye-reactive counter ion compound. The ionic dye-reactive counter ion compound is capable of absorbing actinic radiation and producing free radicals within initiate free radical polymerization or crosslinking of the polymerizable or crosslinkable compound. The present invention also provides magnetic recording media incorporating the aforementioned magnetic recording compositions.

Abstract: A method for fabricating a semiconductor device comprises forming a contact hole in an insulating film formed on a first wiring composed of an Al film, covering the insulating film with an Al film for a second wiring, applying laser beam pulses to the Al film for a second wiring from above, and patterning the Al film to form a second wiring.

Abstract: An apparatus for forming a thin film in which the reactive gases, which have been activated by the reactive gas activation means, accelerated by the kinetic energy controlling means, and still more activated by the excimer laser beam emitted toward the neighborhood of the substrate from the excimer laser beam emitting means disposed outside of the vacuum chamber, react with the material to be deposited, which has been clustered or turned into the cluster ion by the ICB device and accelerated, to form a thin film of a compound as the material to be deposited on the substrate disposed within the vacuum chamber maintained at a predetermined degree of vacuum.

Abstract: This invention relates to a natural or synthetic gemstone or mineral substrate having on its surface an adherent photo-product coating, and a method for coating that substrate, which coating is formed by exposing to light in the presence of an oxygen source, a reactant mixture comprising: 2,2'4,4'-tetrahydroxybenzophenone, with (1) ammonium hydroxide and optionally a trace amount of at least one reactive metal, or (2) ammonium hydroxide and at least one metal salt, or (3) at least one metal salt and at least one amine, or (4) ammonium hydroxide, at least one metal salt and at least one amine; in a suitable solvent.

Abstract: A method for forming an identifying indicia on a cathode ray tube being manufactured, which method is practiced by applying a paint containing a powdered metal to a particular exterior surface portion of a glass envelope, forming a part of the cathode ray tube, to form a solid paint layer, followed by the radiation of a laser beam onto at least a portion of the solid paint layer to form the identifying indicia represented by at least one trace of plasticized deformation on a surface region of the solid paint layer.

Abstract: A method for amending a defective mask pattern of a photomask. A pattern component of a normal mask pattern having the same pattern layout as that of the defective mask pattern to be amended is irradiated by a spotlight. The shape of the spotlight is aligned with the shape of the pattern component which is the same pattern as the component of the defective mask pattern to be amended. At least one base mark is aligned with at least another pattern component near the irradiated portion. Then, the position of the base mark relative to the position of the irradiated portion is fixed. After that, the normal mask pattern is replaced by the defective mask pattern. The base mark is aligned with a pattern component near the defective pattern component in the same manner as the alignment of the normal mask pattern. After that, the spotlight irradiates the defective mask pattern, the luminous intensity of said spotlight being intensified so that it can amend the defective pattern component.

Abstract: An improved method for forming a pattern on a substrate coated with a film is shown. The substrate is irradiated with a laser beam which is shaped through a mask, and a portion of the film is removed by the energy of the laser beam to produce the desired pattern. The laser beam is emitted from an exmer laser.

Abstract: Semiconductor components which have a plurality of layers lying on top of one another are manufactured with the assistance of a method for light-induced, photolytic deposition. Particularly, periodically alternating layers (hyperfine structure elements) and/or doping patterns are produced simultaneously with deposition of layers and/or with randomly selected doping gradients. In particular, the method is also suited for simultaneous deposition of layers lying laterally side-by-side or of laterally side-by-side differing dopings of a layer being deposited. In the context of doping, the radiation damage known from implantation is avoided.

Abstract: A method for producing a semiconductor laser comprising depositing a first semiconductor layer comprising n-type InP on an n-type InP substrate, depositing a diffraction grating of InGaAsP which includes or excludes doping impurities on the first semiconductor layer with irradiating interference fringes by a light excitation crystalline growth means, and burying a portion of the diffraction grating with InGaAsP including or excluding doping impurities with irradiating interference fringes reverse in light and darkness from said interference fringes used in depositing the diffraction grating.

Abstract: A dual layer resist configuration is employed for photopatterning high resolution conductive patterns on underlying polymeric or ceramic substrates, particularly substrates exhibiting surface roughness and non-planar design features such as channels, bosses and ridges. More particularly, a thin underlayer of ablatable photoabsorptive polymer is disposed on a metal coated substrate, after which a thicker layer of substantially transparent material is disposed over the polymer. A beam of laser energy, such as that produced by an ultraviolet excimer laser, is directed through the upper layer and is absorbed by the lower layer which is ablated and simultaneously removes the thick layer above it. This results in the ability to etch high resolution features on polymeric and other substrates, particularly copper coated polyetherimide circuit boards. The resist system is also applicable to VLSI wafers even though such wafers usually do not exhibit surface roughness on the scale generally considered herein.

Abstract: A process for forming a deposited film, which comprises introducing into a film forming space for formation of a deposited film on a substrate an active species (A) formed by decomposition of a compound containing silicon and a halogen and an active species (B) formed from a germanium containing compound for film formation which is chemically mutually reactive with said active species (A) separately from each other, and then permitting the above respective active species and said germanium containing compounds to react chemically with each other by excitation by irradiation of light energy thereby to form a deposited film on the above substrate.

Abstract: A method and device are provided to accomplish laser driven pyrolytic, photolytic and photoactivativation process requiring controlled atmosphere without the use of gas tight cells.A method and device are provided to correct clear faults on a photo-lithographic mask by metallic deposition on the mask at standard temperature and pressure. The deposition is formed by the pyrolytic decomposition of an organometallic gas mixture which may include chromium and molybdenum hexacarbonyls, and a buffer gas. The decomposition is done utilizing a laser beam. The device may be incorporated into a system which has other members used to correct opaque faults in the same mask.

Abstract: A method of producing a substrate structure for a large size display panel. The method involves conveying a transparent substrate from a transparent substrate storage means in a conveying path through a vacuum chamber, and while conveying the substrate, forming at least a patterned transparent conductive film on a surface of the substrate by depositing strips of conductive film on the substrate through a pattern containing member extending in a direction orthogonal to the substrate conveying direction and having strip forming openings therein at intervals along the lengths thereof, and storing the transparent substrates with the strips thereon at the end of the conveying path.

Abstract: The invention relates to a process for the manufacture of semiconductor layers on semiconductor bodies or for the diffusion of impurities from compounds into semiconductor bodies, with fission products which are to be withdrawn during the process being formed. The gist of the invention is that the reactivity of certain fission products is increased by plasma excitation or by the supplying of photons. In particular, active hydrogen is made available for entry into a highly volatile, gaseous combination with existing fission products.

Abstract: A foamed plastics substrate has an image formed on its surface by differential ablation by a laser. A composition is applied to the surface in the shape of the image to be formed and has an ablation rate different to that of the foam. After irradiation of the surface, the image is formed in relief on the surface.