Abstract: A void-free prepreg is made by contacting a porous sheet material with a resin so that resin enters the sheet, providing a subatmospheric pressure on one side of the resin-containing sheet to draw resin through the sheet, and then B-staging the resin-containing sheet.

Abstract: A method for producing an electronic device having a multi-layer structure comprising one or more controlled band gap semiconductor thin layers formed on a substrate comprises forming at least one of said controlled band gap semiconductor thin layers according to the photo CVD method and forming at least one of the other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.

Abstract: A selective working method in which the surface to be worked of a workpiece is locally irradiated with energy beams and an electroless plating solution or an electroless etching solution is contacted with the irradiated workpiece surface, with the electroless plating solution or the electroless etching solution flowing continuously in the substantially same direction of as the direction of an irradiation of energy beams. The electroless plating of the electroless etching can be conducted selectively by this method. Above selective working method is best suited for the formation or correction (repair, filling up etc.) of micro-patterns on the workpiece such as metals, semi-conductors, insulators, etc.

Abstract: A method for forming a deposition film comprises introducing, into a film forming chamber for forming a deposition film on a substrate, a silicon compound as a material for film formation and an active species generated from a compound containing carbon and halogen and capable of chemical interaction with said silicon compound, and applying thereto at least an energy selected from optical, thermal and discharge energies to excite said silicon compound and to cause a reaction thereof, thus forming a deposition film on said substrate.

Abstract: Nonrefractory micrometer-thick deposited metal or metallization, for example, aluminum and aluminum alloy films, on integrated circuits are planarized by momentarily melting them with optical pulses from a laser, such as a xenon chloride excimer laser. The substrate, as well as any intervening dielectric and conducive layers, are preheated to preferably one-half the melting temperature of the metal to be planarized, thereby enhancing reflow of the metal upon melting. This improves planarization and reduces stress in the resolidified metal. Laser planarization offers an attractive technique for fabricating multilayer interconnect structures, particularly where a number of ground or power planes are included. Excellent step coverage and via filling is achieved without damaging lower layers of interconnect.

Abstract: A laser induced direct writing pyrolysis of a refractory metal or metal silicide on substrates is described. Typical reactants comprise flowing WF.sub.6, MoF.sub.6 or TiCl.sub.4 with SiH.sub.4 and an inert gas, such as Argon. A preferable substrate surface is a polyimide film. The refractory metal film may comprise low resistivity W, M, or Ti, or silicides thereof, having a predetermined resistance depending on the relative ratio of reactants. The invention is useful, inter alia, for repair of defective circuit interconnects, and formation of interconnects or resistors on substrates.

Abstract: An improved laser markable material useful for encapsulation of electroic devices is obtained by adding TiO.sub.2 or TiO.sub.2 +CrO.sub.3 to common plastic encapsulants formed from a mixture of a resin+filler+carbon black+mold release agent. When irradiated by a laser, the originally grey material turns bright gold, providing a high contrast durable mark. The material has excellent marking contrast as well as better stability with time and temperature as compared to prior art laser markable encapsulants. Desirable concentrations, in weight percent of the compound, are 1-5% TiO.sub.2 and 0-3% CrO.sub.3, with 1-3%TiO.sub.2 and 0.5-2% CrO.sub.3 being preferred. Carbon black is optional but a concentration in the range 0.1-3% by weight is desirable with 0.5-1% preferred. Improved encapsulation and marking methods and improved devices using this material are described.

Abstract: This invention relates to materials produced by diluting in a solvent a preceramic mixture of a partially hydrolyzed silicate ester and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, a titanium alkoxide, and a zirconium alkoxide. The preceramic mixture solvent solution is applied to a substrate and ceramified by heating. One or more ceramic coatings containing silicon carbon, silicon nitrogen, or silicon carbon nitrogen can be applied over the ceramified SiO.sub.2 /metal oxide coating. A CVD or PECVD top coating can be applied for further protection. The invention is particularly useful for coating electronic devices.

Abstract: A system and method of pulsed-laser microfabrication wherein a first substrate of transparent material, such as glass, has one or more target materials positioned on a surface, preferably a flat surface, of the substrate. These target materials include a thin film of electrically conductive material--i.e., a conductor or semiconductor--immediately adjacent to the substrate surface. Pulsed laser energy is directed through the transparent substrate onto the conductive film at a sufficient intensity and for a sufficient duration to rapidly vaporize the metal film. The target materials are driven by film vaporization energy and by the reaction thereof against the glass substrate onto the opposing or object surface of a second substrate.

Abstract: Method is provided for manufacturing large crystalline and monocrystalline semiconductor-on-insulator devices.

Abstract: The present invention provides radiation-curable ink compositions comprising pigment and a photohardenable composition; the photohardenable composition comprises a free radical addition polymerizable or crosslinkable compound and an ionic dye-reactive counter ion compound which is capable of absorbing actinic radiation and producing free radicals which initiate free radical polymerization or crosslinking of the polymerizable or crosslinkable compound.

Abstract: The invention relates to visible-laser deposition reactions of metal containing oxyhalide and carbonyl vapors, such as, chromyl chloride vapor, CrO.sub.2 Cl.sub.2, or cobalt carbonyl, Co.sub.2 (CO).sub.8, for direct writing of metal containing opaque patterns on various substrates (S.sub.i, S.sub.i O.sub.2, GaAs and glass). Deposition at low laser power is by photolyses of adsorbed reactant molecules. Higher powers initiate deposition photochemically and continue it with a combined photolytic/pyrolytic reaction, simultaneously inducing a solid-phase conversion of the deposited film. Mixed Cr.sub.2 O.sub.3 /CrO.sub.2 or cobalt thin films of 1-nanometer to several-micrometer thickness, as well as 1-millimeter-long single crystals of Cr.sub.2 O.sub.3 or cobalt, can be grown with this process, the former at rates up to 3 /.mu.m/s. Thin chromium oxide films produced in this manner are strongly ferromagnetic.

Abstract: In this method for forming an alloy layer on the surface of an aluminum alloy substrate, a powder for alloying, containing a substance to be alloyed with the substrate and an element selected from the group consisting of silicon and bismuth, is disposed upon the surface of the aluminum alloy substrate. This powder is then irradiated with a CO.sub.2 laser, so as to be melted and fused together with a surface portion of the aluminum alloy substrate, so that these two are alloyed together. The powder for alloying may be a powder of an alloy of the substance to be alloyed with the aluminum alloy substrate and the element selected from the group consisting of silicon and bismuth, or alternatively may be a mixture of a powder of the substance to be alloyed with the aluminum alloy substrate and a powder of the element selected from the group consisting of silicon and bismuth.

Abstract: Method of joining a semiconductor chip to a chip carrier by cementing or soldering which includes treating an area of the semiconductor chip to be joined to the carrier with a laser beam, adjusting the energy of the laser beam to produce depressions by localizing melting of the semiconductor material of the chip and to at least partially pile melted semiconductor material at the edge of the depression, and applying cement or solder between the treated area of the semiconductor chip and the carrier.

Abstract: In the repair of a metallic article portion, a metal powder and laser beam are applied concurrently, the laser beam being applied in a power density range of 10.sup.4 to 10.sup.6 watts per square centimeter at an interaction time between the laser and the article and powder of 0.005-2 seconds to generate a repair layer.Apparatus for delivering a consistent, continuous flow of powder comprises the combination of an enclosed powder reservoir including means to introduce a gas under pressure, a mechanical means to feed powder into a conduit, a conduit vibrating means, and a fluid-cooled powder delivery nozzle.

Abstract: A method of forming a predetermined pattern on a substrate or support. In one embodiment, the method comprises the steps of:(a) providing a laser beam having sufficient power to vaporize a specified pattern-forming material;(b) providing an assembly comprising (i) a substrate which is transparent to the laser and which forms an intimate contact interface with (ii) a smooth layer of the selected pattern-forming material;(c) focusing the laser beam through the substrate at or near the interface of the pattern-forming material; and(d) moving the substrate and the laser beam relative to each other according to the predetermined pattern to selectively deposit the pattern-forming material on the substrate according to the predetermined pattern.

Abstract: Optical components (16), particularly germanium components, are provided with a coating on exposed surface (15) within a vacuum chamber (17) by production of a glow discharge plasma containing carbon and another depositable element from feedstock gases which are fed to the chamber (17) via mass-glow rate controllers (9, 10, 11). The mass flow rate of the feedstock gases is maintained substantially constant at predetermined levels during respective time intervals to provide a multilayer coating of predetermined characteristics. Typically the coating has at least one first layer which is amorphous hydrogenated germanium carbide, at least one second layer which is amorphous hydrogenated germanium and at least one third layer which is amorphous hydrogenated carbon, these layers being ordered such that each second layer is bounded on each side by a first layer and the third layer is bounded on one side by a first layer, the other side of the third layer forming the exposed surface of the coating.

Abstract: Thermal sources of Te and of Hg are provided in a vacuum chamber to furnish constant effusion of Te and Hg. Laser radiation is used to evaporate a beam of CdTe from a target of CdTe in the chamber. The laser radiation is modulated to vary the beam intensity of CdTe and thereby deposit a controlled compositional profile of Hg.sub.(1-x) Cd.sub.x Te on a substrate located in the chamber.

Abstract: In the process according to our invention authenticating (code) marks are provided on paper, particularly a security or other financial instrument, by contacting laser radiation from a laser light source on the paper to form the authenticating marks. The objects of our invention are attained with an apparatus equipped with a pivotable mirror device which allows the laser radiation to be directed on sheets of paper arranged transverse to the transport direction on a paper sheet. A preservative medium can be used to coat and protect the marks particularly from mechanical abrasion.

Abstract: A continuous process for the preparation of fiber composite materials by impregnating fiber reinforcing material with a solution of a thermoplastic or thermosetting plastic precursor, followed by evaporating the solvent used by means of exposure to light having a wave length corresponding to the absorption maximum of the solvent.

Abstract: The first and second electrodes, to which a recording signal is to be applied, are printed to a desired pattern on an insulating substrate by, for example, a screen printing method. A heating resistor is formed by, for example, a screen printing method so as to be bridged over these first and second electrodes. A protective layer is formed so as to cover the first and second electrodes and heating resistor therewith. Each of the heating portions of the heating resistor is provided with one or a plurality of laser-made holes, and the resistance value of each heating portion of the heating resistor is regulated to a predetermined level on the basis of the number of the laser-made holes.

Abstract: Semiconductor crystal films on a dielectric substrate are advantageously made by a zone melting method. Single-crystal structure is initiated at a seed surface, and made to extend across a dielectric surface by melting and resolidifying.Melting is effected upon irradiation with optical radiation which is focused onto an elongated zone; the zone is moved so as to locally melt successive portions of a layer of precursor material which may be amorphous or polycrystalline. The use of incoherent radiation is convenient, and focusing is typically by using a reflector.The process is conveniently effected under a controlled atmosphere and the layer being crystallized may be encapsulated so that no free semiconductor surface is exposed to an atmosphere.

Abstract: A method for producing an electronic device having a multi-layer structure comprising one or more valence electron controlled semiconductor thin layers formed on a substrate, comprises forming at least one of said valence electron controlled semiconductor thin layers according to the photo CVD method and forming at least one of other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.

Abstract: An improved method for depositing material on substrate is shown. The material to be deposited is energized by irradiation with light in a chamber in which CVD method is carried out. The energy induced by the irradiation remains in the molecules of the material even after the molecules have lain on the substrate. With the residual energy, the molecules can wander on the substrate even to a hidden surface. Due to this wandering, the deposition can be performed also on the inside of a deep cave.

Abstract: The disclosure concerns an identification card containing information such as name, account number, photograph of the card owner, etc. The card is protected by a superjacent printed security pattern, such as a guilloche, or other pattern which is difficult to imitate, or a homogeneous printed surface. The information is inscribed into the identification card material through the printed security pattern by a laser beam recorder. The energy of the laser and the colors of the printed security pattern are coordinated with each other in such a way that the laser light is not absorbed by the printed security pattern and the latter is not destroyed by the laser light.

Abstract: In a method for forming a covering composite layer on the surface of an aluminum alloy substrate, a powder mixture containing ceramic carbide of a metal, silicon and a metal element which forms with silicon an inter metallic compound having a specific gravity comparable with that of the ceramic carbide is disposed upon the surface of the aluminum alloy substrate, and then the powder mixture so disposed is irradiated with a laser, so that the silicon and the metal element which forms the inter metallic compound with silicon in the powder mixture and a surface portion of the aluminum alloy substrate are melted and fused together.

Abstract: A laser-induced CVD method in accordance with this invention comprises the steps of: setting a substrate in a reactive gas; applying a laser beam to the reactive gas to decompose it and produce not only free radicals but also ions due to multiphoton absorption; and applying an electric field thereby to efficiently transport the ions toward the substrate and deposit a thin film on the substrate at an increased deposition rate.

Abstract: A method of, and apparatus for, repairing mechanical and/or chemical damage to the surface of glass bottles destined for re-use. A bottle to be repaired is brought to a temperature in the region of the transformation point of the glass of the bottle, its surface is thermally treated with laser beams, and during the treatment the bottle surface is linearly scanned with the laser beams while rotating the bottle about its longitudinal axis to repair the surface. The apparatus comprises a laser source and optical means for directing the laser beam generated by the laser source onto the surface of a bottle being treated.

Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, irradiating them with light energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.

Abstract: A 3D epitaxial structure is described in which metal compounds are formed in a semiconductor layer, the metal compounds being epitaxial with the semiconductor layer and having a top surface which is planar with the top surface of the semiconductor layer. Onto this another layer can be epitaxially grown, such as an additional semiconductor layer. The technique for forming such a structure utilizes a starting material for metal compound formation which leaves a residue that is preferentially etched in order to preserve the embedded metal compound and to leave a substantially planar surface comprising the metal compound epitaxial regions and the unreacted surface regions of the semiconductor layer.

Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then irradiating them with light energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.

Abstract: An apparatus for repairing both clear and opaque defects in a photomask having a metal film pattern on a glass plate in which a visible laser light source is pulsed at selected frequencies to direct an optically focused laser beam into a gas sealed cell containing a mask. At one frequency, the laser pulses ablate opaque mask defects. At another frequency, and with the cell filled with a metal bearing gas, the laser beam causes thermal decomposition of the gas and deposition of metal to cure clear defects.

Abstract: A process for protecting an article from wear, wherein a frictionally transformable material is provided at the surface of the article, and then the surface of the article is subjected to frictional wear. The wear transforms the outermost layer of the material to the amorphous state, which is more wear resistant and corrosion resistant than is the material in its nonamorphous state. As the material is worn away gradually, the frictional transformation continues, thereby replenishing the amorphous outermost layer, so that a protective outermost layer remains.

Abstract: A method for making semiconductor devices includes selectively simultaneously and momentarily irradiating a semiconductor substrate surface by a pulsed laser through a mask positioned between and spaced away from laser and substrate to briefly melt sub-regions of that surface. An optical beam reducer system is interposed between the relatively large separate mask and the substrate. An optical expander system is interposed between the laser and the mask to further increase the possible mask size and further reduce the radiation density at the mask. Wet photolithographic processing may be eliminated for selective diffusions of dopants, for selective epitaxy, for selectively converting polysilicon layers over silicon substrates to monocrystalline silicon layers and for selectively etching the substrate by a plasma induced by the patterned laser energy. Semiconductor device manufacture may thereby be greatly simplified.

Abstract: An improved deposition method for conductive layer is shown. Adverse effects of conductive deposited material on a wall of a reaction chamber is overcome by provision of a multi-chambered system. One chamber is devoted to a resonance space in which process gas is excited by ECR. Another chamber is devoted to a reaction space in which productive gas is decomposed to proceed the deposition.

Abstract: A transparent conductive film is formed on a glass substrate covering substantially its entire surface area and this transparent conductive film is divided into a plurality of transparent conductive parts per each photoelectric converting region. The photoelectric converting region is of a nearly rectangular shape, and accordingly, in order to divide the transparent conductive film into respective transparent conductive film parts, a laser beam is irradiated along all longitudinal and lateral sides of the rectangle. Thereby, the transparent conductive film parts corresponding to the photoelectric converting regions are formed as island regions. Semiconductor film parts are formed on the transparent conductive film parts divided into island regions corresponding to respective photoelectric converting regions and subsequently aluminum film parts are formed on these semiconductor film parts.

Abstract: A CDV method in which a substrate having a surface to be deposited where the film is placed in a reaction chamber and a reactive gas introduced into the reaction chamber is excited by irradiation with flat light and scattered light to thereby deposit the film on the substate surface. The flat light is directed along the substrate surface in close proximity thereto, and the scattered light is directed to the substrate surface thereto.

Abstract: A method for fabricating a periodically multilayered film having a plurality of amorphous thin layers of different kinds stacked periodically is performed by forming at least one kind of the layers in the stack by a photo CVD method, whereby a more definite periodicity in the composition of the lattice and fewer defects are achieved.

Abstract: A process for the production of semiconductor devices comprising: (1) forming a first oxide film on a semiconductor substrate, (2) forming a groove or grooves on the first oxide film, (3) forming a first polycrystalline silicon film as an active layer on the whole surface of the first oxide film, (4) forming a second oxide film on the first polycrystalline silicon film, (5) forming a second polycrystalline silicon film on the second oxide film, said second polycrystalline silicon film serving as a buffer layer which absorbs the fluctuation of a scanning laser beam irradiating the first polycrystalline silicon film in step (7), (6) forming an anti-reflection film made of an oxide film on said buffer layer, and (7) irradiating the first polycrystalline silicon film with a scanning laser beam having a dual peak type power distribution to melt said first polycrystalline silicon film in such a manner that both peaks in the power distribution of the laser beam are positioned at both outer sides of said grooves, res

Abstract: A silicon nitride layer is formed on a substrate by reacting (1) silicon fluoride, (2) nitrogen or nitrogen hydride and (3) nitrogen fluoride by a chemical vapor deposition method using thermal energy and/or optical energy.According to the invention process, fluorine is added to the silicon nitride layer to make Si--F bonds, by which the amount of Si--H bonds can be reduced less than 1/10 as compared with that of silicon nitride made by the conventional reaction between SiH.sub.4 and HN.sub.3. Silicon nitride layer according to the invention will highly enhance the reliability of IC, LSI.

Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, and then allowing both the species to react with each other thereby to form a deposited film on the substrate.

Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately form each other, and then allowing both the species to react with each other thereby to form a deposited film on the substrate.

Abstract: Homo- and copolycondensates selected from the group consisting of linear saturated polyamides, polyesters and polyester amides derived from dicarboxylic acids of formula IV ##STR1## wherein Z is a direct bond, methylene, --O--, --S--, --SO--, --SO.sub.2 --, --CO--, --NH-- or alkylidene, R.sup.1 and R.sup.2 are independently alkyl, halogen, cyano, nitro, alkoxy, phenoxy or benzyl, and m and n are independently 0 to 3, are radiation-sensitive and are particularly suitable for the production of protective coatings and relief images.

Abstract: Process and apparatus for treating a material by thermoionic effect with a view to modifying its physicochemical properties.The apparatus comprises a substrate having first and second opposite faces, the first face being covered with a dopant film and being positionable facing the material, while maintaining a space between the film and the material; a source producing a collimated, pulsed laser beam having a given wavelength, directed onto the second face of the substrate which is transparent to said wavelength, said laser beam being able to interact with the dopant film for forming dopant ions by explosive vaporization of the dopant; and electrical means for producing simultaneously with the laser pulse an electric field in said space for accelerating the dopant ions with a view to their thermoionic implantation in the material.Application to the treatment of metals and alloys.

Abstract: A method is described for depositing gold onto a target surface using volatile organogold(I) and organogold(III) complexes. The method requires the vaporization of the organogold complex under high vacuum and moderate temperature and introduction of the vaporized complex into contact with the target surface heated to a temperature at or above the decomposition temperature for the complex, so that the complex decomposes upon contacting the surface thereby depositing gold thereon. A number of new organogold complexes are described for use in the method.

Abstract: In a method of manufacturing a semiconductor device of a three-dimensional structure having a semiconductor substrate and another single crystal semiconductor layer formed thereon, the another single crystal semiconductor layer is prepared by melting a vapor-deposited amorphous or polycrystalline semiconductor layer by the energy of laser beams then solidifying and converting the layer into single crystals. For initiating the melting at selected regions of the layer, the layer is formed at the surface thereof with a silicon nitride film of a uniform thickness and a silicon nitride film with a thickness at the region corresponding to the selected region different from that of the remaining region. The region thicker or thinner than other region reflects the laser energy at different reflectivity thereby to provide a desired temperature distribution.

Abstract: In a method of making an electronic device having at least a transparent conductive layer, which includes at least a step of forming a transparent conductive layer member and a step of forming a transparent conductive layer by patterning the transparent conductive layer member using a spot-shaped or linear laser beam or beams, each of which has a short wavelength of 400 nm or less and optical energy greater than the optical energy band gap of the transparent conductive layer.

Abstract: In an optical system (19) of an optical CVD device, a variable optical attenuator (25) for a pulsed optical beam is controlled in two steps by a control unit (28) to make the optical beam have an optical intensity at a predetermined area of a substrate (11) in a first intensity range and then in a second intensity range which is an intensity range ordinarily used in depositing a CVD film on the predetermined area. The first intensity range should be very high to clean the substrate at the predetermined area without damages to the substrate. When the CVD film should be deposited to a thickness of one micron or thicker, the optical intensity is preferably varied to a third intensity range after the CVD film grows so that a peak temperature of the CVD film falls as a result of an increase in the heat capacity of the CVD film being grown. The third intensity range should be higher than the second intensity range and lower than an intensity at which the CVD film evaporates while being grown.

Abstract: A method for the manufacture of a semiconductor photoelectric conversion device in which a plurality n of semiconductor elements U.sub.1 to U.sub.n are sequentially formed side by side on a substrate and connected in series one after another. The element U.sub.i (i=1, 1, substrate, a non-single-crystal semiconductor laminate member Q.sub.i on the electrode E.sub.i and a second electrode F.sub.i on the laminate member Q.sub.i. The electrode F.sub.j+1 of the element U.sub.j+1 (j=1, 2, . . . (n-1)) is connected via coupling portion K.sub.j to the first electrode E.sub.j. After the formation of a first conductive layer on the substrate, the electrode E.sub.1 to E.sub.n are provided by forming grooves G.sub.1 to G.sub.n-1 in the first conductive layer through use of a first laser beam. A non-single-crystal semiconductor laminate layer is formed to cover the electrodes E.sub.1 to E.sub.n and the grooves G.sub.1 to G.sub.n-1, after which grooves O.sub.1 to O.sub.

Abstract: The thickness of the dielectric material of an integrated circuit on top of which is provided a semiconductor layer, is selected to be an integer multiple of one-half the wavelength of the laser light in the dielectric material in order to make the dielectric material layer invisible to the laser-trimming light.