Abstract: Disclosed herein are non-oxygen containing silicon-based films, and methods for forming the same. The non-oxygen silicon-based films contain >50 atomic % of silicon. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH3 groups with at least one C2-3 linkage between silicon atoms such as 1,4-disilabutane.

Abstract: A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust. Carbon aerogels can be coated with sol-gel silica and the silica can be converted to silicon carbide, improving the thermal stability of the carbon aerogel.

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Abstract: In order to improve the emptying of residual contents from containers, such as pharmaceutical packaging, the invention provides corresponding substrates with a hydrophobic coating. Provided for this purpose is a composite material which comprises a substrate and a coating deposited on it, which forms at least a part of the surface of the coated substrate, with the coating having a compound containing the elements C, O, and H, with further elements, apart from Si, C, H, having a content of less than 10 at %, preferably less than 5 at %, characterized in that this compound has a composition SiOxCyHz, in which x is at most 1.2.

Abstract: A process for the preparation of nano structured silicon thin film using radio frequency (rf) plasma discharge useful for light emitting devices such as light emitting diode, laser etc. which allows precise control of the nanocrystal size of silicon and its uniform distribution without doping using a plasma processing for obtaining efficient photoluminescence at room temperature.

Abstract: The invention relates to a method for producing a transparent barrier layer system, wherein in a vacuum chamber at least two transparent barrier layers and a transparent intermediate layer disposed between the two barrier layers are deposited on a transparent plastic film, wherein for deposition of the barrier layers aluminium is vaporised and simultaneously at least one first reactive gas is introduced into the vacuum chamber and wherein for deposition of the intermediate layer aluminium is vaporised and simultaneously at least one second reactive gas is introduced into the vacuum chamber, and a silicon-containing layer is deposited as intermediate layer by means of a PECVD process.

Abstract: A method for using a vertical film formation apparatus includes performing a coating process inside the process container without product target objects present therein to cover an inner surface of the process container with a coating film, and then performing a film formation process inside the process container accommodating the holder with the product target objects placed thereon to form a predetermined film on the product target objects. The coating process alternately supplies the first and second process gases into the process container without turning either of the first and second process gases into plasma. The film formation process alternately supplies the first and second process gases into the process container while turning at least one of the first and second process gases into plasma.

Abstract: Provided is a gas barrier film including a base, a first barrier layer containing silicon which is formed on at least one surface of the base, and a second barrier layer containing silicon ox nitride which is formed on the first barrier layer. The ater vapor transmission rate (g/m2/day) at 40° C. and 90% RH in a structure in which the first barrier layer is formed on the base is R1 and the water vapor transmission rate (g/m2/day) at 40° C. and 90% RH in a structure in which the first barrier layer and the second barrier layer are laminated on the base is R2, and the ratio of the water vapor transmission rate R1 to the water vapor transmission rate R2 (R1/R2) is 80 or more and 5000 or less. Hereby, excellent, barrier performance can be exhibited under a high-temperature and high-humidity environment.

Abstract: A method for producing a component, and a component, in particular a micromechanical and/or microfluidic and/or microelectronic component, is provided, the component including at least one patterned material region, and in a first step the patterned material region is produced in that microparticles of a first material are embedded in a matrix of a second material, and in a second step the patterned material region is rendered porous by etching using a dry etching method or a gas-phase etching method.

Abstract: A substrate processing method effectively suppresses non-uniformity in deposition degree on a surface of a substrate. The substrate processing method includes depositing a deposit on a sidewall of each opening of a resist pattern, which is formed on an antireflection film on an etching target film of the substrate and is provided with a plurality of openings, before etching the etching target film of the substrate. Plasma is generated in the depositing process by introducing a CHF-based gas into the processing chamber at a flow rate equal to or higher than about 1000 sccm while a pressure in the processing chamber is set to equal to or higher than about 100 mTorr.

Abstract: The method of manufacturing a gas barrier film feeds long lengths of a substrate and forms a silicon nitride film as the gas barrier film on the substrate by a capacitively coupled plasma-enhanced CVD technique while transporting the substrate in a longitudinal direction. Gaseous raw materials using in the forming step of the silicon nitride film includes at least silane gas and ammonia gas, and a ratio P/Q [W/sccm] is not less than 1 when a flow rate of the silane gas is denoted as Q [sccm] and a power input for generating a capacitively coupled plasma is denoted as P [W], a tension applied to the substrate transported between two transporting elements is not more than 100 [N/m], and a pair of electrodes for at least forming the silicon nitride film on the substrate is interposed between the two transporting elements.

Abstract: The present invention provides a method of forming a nitrogen-free dielectric anti-reflection layer comprising: introducing a reaction gas into the discharge tube until the reaction gas reaching a stable state; introducing the reaction gas into the reaction chamber and then generating a plasma, or generating a plasma and then introducing the reaction gas into the reaction chamber, wherein the time delay occurs between the two processes is utilized to perform the deposition of the nitrogen-free dielectric anti-reflection layer; finally stop introducing the reaction gas and then stop generating the plasma. The method can flexibly control the extinction coefficient and the refractive index of the nitrogen-free dielectric anti-reflection layer so as to obtain a straight photoresist pattern and greatly reduce the photoresist standing waves effect and photoresist poisoning effect.

Abstract: A method for coating a substrate surface by PECVD is provided, the method comprising generating a plasma from a gaseous reactant comprising an organosilicon precursor and optionally O2. The lubricity, hydrophobicity and/or barrier properties of the coating are set by setting the ratio of the O2 to the organo silicon precursor in the gaseous reactant, and/or by setting the electric power used for generating the plasma. In particular, a lubricity coating made by said method is provided. Vessels coated by said method and the use of such vessels protecting a compound or composition contained or received in said coated vessel against mechanical and/or chemical effects of the surface of the uncoated vessel material are also provided.

Abstract: Alkoxyaminosilane compounds having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: (R1R2)NSiR3OR4OR5??Formula (I) wherein R1 is independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group; R2 and R3 are each independently selected from hydrogen; a linear or branched C1 to C10 alkyl group; a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group; and R4 and R5 are each independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group.

Abstract: Methods of depositing thin film materials having crystalline content are provided. The methods use plasma enhanced chemical vapor deposition. According to one embodiment of the present invention, microcrystalline silicon films are obtained. According to a second embodiment of the present invention, crystalline films of zinc oxide are obtained. According to a third embodiment of the present invention, crystalline films of iron oxide are obtained.

Abstract: The producing method of a gas barrier layer uses a material having at least one Si—H bond, a material having at least one N—H bond, and at least one of nitrogen gas, hydrogen gas and a noble gas and forms the gas barrier layer by plasma-enhanced CVD using a plasma in which an emission intensity A of emission at 414 nm, an emission intensity B of emission at 336 nm, an emission intensity C of emission at 337 nm, and an emission intensity D of emission at 656 nm satisfy formulas a to c: 2<B/A<20??Formula a: C/B<2??Formula b: 0.5<D/B<50.

Abstract: The present invention is a process for surface treatment of a fluid-contacting device where a continuous organo-silicon or organo-silicon and oxygen plasma coating is applied at a low temperature by a plasma deposition technique to at least one contacting surface of the device and devices with the process applied. The plasma coating inhibits bacterial attachment to the device and prevents biofilm formation on said device. The coating preferably has a thickness from about 1 nm to about 100 nm, more preferably from about 20 nm to about 30 nm. The trimethylsilane and oxygen gas mixture is an approximate ratio of 1 to 4. The invention demonstrates that bacterial cells on the organo-silicon or organo-silicon/O2 coated surface are more susceptible to antibiotic treatment than their counterparts in biofilm formed on uncoated surface.

Abstract: An encapsulation is formed on a printed circuit board that is populated with electronic components, especially a printed circuit board having electronic components that have to meet certain safety standards because they are used, e.g. in the area of explosion control. The printed circuit board assembly is coated with a bottom layer, preferably a bottom layer produced from a plasma and pretreated such that the protective coat adheres on the entire surface of the printed circuit board assembly evenly and in a sufficient thickness and does not shrink during the subsequent curing process regardless of the material of the surface and/or regardless of the fact whether the coat is applied to a geometrically problematic area on the printed circuit board assembly such as a corner or an edge.

Abstract: The invention relates to a transparent glass substrate, associated with a transparent electro-conductive layer capable of constituting an electrode of a photovoltaic cell and composed of a doped oxide, characterized by the interposition, between the glass substrate and the transparent electroconductive layer, of a mixed layer of one or more first nitride(s) or oxynitride(s), or oxide(s) or oxycarbide(s) having good adhesive properties with glass, and one or more second nitride(s) or oxynitride(s) or oxide(s) or oxycarbide(s) capable of constituting, possibly in the doped state, a transparent electroconductive layer; a method for producing this substrate; a photovoltaic cell, a tempered and/or curved glass, a shaped heating glass, a plasma screen and a flat lamp electrode having this substrate.

Abstract: A thin film is formed by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using a reactant gas and a plasma, wherein the reactant gas is supplied substantially uniformly over the substrate, and the plasma is pulse-time-modulated and applied in the process of supplying the reactant gas.

Abstract: A method according to the invention comprises: starting plasma discharge for forming the gas barrier layer in a film deposition chamber; and producing the gas barrier layer by using a plasma after a first predetermined period of time has elapsed from a start of the plasma discharge.

Abstract: Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.

Abstract: A coated article is provided that may be heat treated in certain example embodiments. A coating of the coated article includes a zinc oxide inclusive layer located over and contacting a contact layer that is in contact with an infrared (IR) reflecting layer of a material such as silver. It has been found that the use of such a zinc oxide inclusive layer results in improved thermal stability upon heat treatment, increased visible transmission, and/or lower sheet resistance (Rs).

Abstract: A medicinal inhalation device having a non-metal coating coated on at least a portion thereof, and onto which non-metal coating an at least partially fluorinated compound is then covalently bonded.

Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C4 to C14 cyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.

Abstract: The present invention provides a process for the application of high temperature coating that provide enhanced impact resistance and erosion damage for the coatings. For high temperature coating systems that provide environmental protection to silicon based ceramics, the process provides the deposition of a silicon-based bond coat on the substrate using the directed vapor deposition with plasma activation and at least one supersonic gas jet nozzle. The process provides the deposition of an EBC layer using the directed vapor deposition with the gas jet nozzle. In one embodiment, the thermal barrier layer may also contain one or more dense embedded layers which further promote impact resistance. Within the process, the particular layers, silicon bond coat, EBC layer and/or TBC layer may be deposited together or specific novel layers applied in combination with other layers deposited using prior known deposition techniques.

Abstract: A method for improving an adhesion of an adhesive to a cured silicon-containing surface is provided. The method comprises applying a primer composition to the surface before applying the adhesive; and subjecting the surface to a plasma treatment before or after the composition is applied thereto; wherein the primer composition comprises a polar organic solvent, an acrylic monomer, and an amino-containing silane.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying at least two types of source gases into the process vessel, each of the at least two types of source gases containing the element, and (b) changing the layer containing the element by supplying reaction gas into the process vessel, the reaction gas being different from the at least two types of source gases; and unloading the processed substrate from the process vessel.

Abstract: Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: XmR1nHpSi(NR2R3)4-m-n-p??I wherein X is selected from Cl, Br, I; R1 is selected from linear or branched C1-C10 alkyl group, a C2-C12 alkenyl group, a C2-C12 alkynyl group, a C4-C10 cyclic alkyl, and a C6-C10 aryl group; R2 is selected from a linear or branched C1-C10 alkyl, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; R3 is selected from a branched C3-C10 alkyl group, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R2 and R3 are linked or not linked to form a ring.

Abstract: Enhanced corrosion resistance is achieved in a coating by using a germanium-containing precursor and hollow cathode techniques to form a first layer directly on the surface of a workpiece, prior to forming an outer layer, such as a layer of diamond-like carbon (DLC). The use of a germanium or germanium-carbide precursor reduces film stress and enables an increase in the thickness of the subsequently formed DLC. Germanium incorporation also reduces the porosity of the layer. In one embodiment, a cap layer containing germanium is added after the DLC in order to further reduce the susceptibility of the coating to chemical penetration from the top.

Abstract: The coated member production method includes a DLC film forming step of introducing a feedstock gas containing a carbon compound and an oxygen-containing organic silicon compound into a treatment chamber in which a base is accommodated, and applying a voltage to the base at a treatment pressure of not lower than 100 Pa and not higher than 400 Pa to generate plasma to form a DLC film on a surface of the base. Hexamethyldisiloxane, for example, is used as the oxygen-containing organic silicon compound. A DC pulse voltage, for example, is applied to the base in the DLC film forming step.

Abstract: In one embodiment, a method of producing a porous semiconductor film on a workpiece includes generating semiconductor precursor ions that comprise one or more of: germanium precursor ions and silicon precursor ions in a plasma of a plasma chamber, in which the semiconductor precursor ions are operative to form a porous film on the workpiece. The method further includes directing the semiconductor precursor ions to the workpiece over a range of angles.

Abstract: A method is described of depositing film of an amorphous or microcrystalline material, for example silicon, from a plasma on to a substrate. Microwave energy is introduced into a chamber as a sequence of discrete microwave pulses, a film precursors gas is introduced into the chamber as a sequence of discrete gas pulses, and gas for generating atomic hydrogen is supplied to the chamber at least during each microwave pulse. Each microwave pulse is followed in non-overlapping fashion with a precursor gas pulse, and each precursor gas pulse is followed by a period during which there is neither a microwave pulse nor a precursor gas pulse.

Abstract: Disclosed are precursors that are adapted to deposit SiCOH films with dielectric constant and Young's Modulus suitable for future generation dielectric films.

Abstract: The present invention relates to an electrode composed of carbon having at least two different zones, wherein an outer zone (A) forms the base of the electrode and carries one or more inner zones, wherein the innermost zone (B) projects from the zone (A) at the top and has a lower specific thermal conductivity than zone (A).

Abstract: A conventional polymer is grafted from a plasma polymer layer provided at a substrate surface by radical polymerisation initiated from plasma induced radicals present at or in the plasma polymer, particularly radicals provided during deposition of the plasma polymer.

Abstract: Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.

Abstract: A method is described for forming a film of amorphous silicon (a-Si:H) on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure in the enclosure. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The substrate is held during deposition at a temperature in the range 200-600° C., preferably 225-350° C. and a bias voltage is applied to the substrate at a level to give rise to a sheath potential in the range ?30 to ?105V, preferably using a source of RF power in the range of 50-250 mW/cm2 of the area of the substrate holder.

Abstract: A seasoning method for a film-forming apparatus configured to form a silicon nitride film on a substrate placed in a process chamber. The method is conducted for reducing particles in the apparatus. The method comprises executing the plasma cleaning of the process chamber to remove a film deposited on the inner wall thereof (step S1), subsequently depositing an amorphous silicon film (step S2), depositing thereon a silicon nitride film in which the nitrogen content gradually increases in the thickness direction (step S3), and keeping the inside of the process chamber being filled with a rare-gas plasma until film formation on the substrate is initiated (step S4).

Abstract: Methods of forming a silicon-and-nitrogen-containing layers and silicon oxide layers are described. The methods include the steps of mixing a carbon-free silicon-containing precursor with plasma effluents, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layers may be made flowable or conformal by selection of the flow rate of excited effluents from a remote plasma region into the substrate processing region. The plasma effluents are formed in a plasma by flowing inert gas(es) into the plasma. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film.

Abstract: Disclosed are methods for deposition of a chemical compound or element using an atmospheric pressure glow discharge plasma in a treatment space comprising two electrodes connected to a power supply for providing electrical power during an on-time (ton). The treatment space is filled with a gas composition of an active and an inert gas mixture, including a precursor of the chemical compound or element to be deposited. Dust formation is prevented by using Nitrogen in the gas composition, applying short pulses and using a predetermined residence time of the gas composition in the treatment space. Best results are obtained when using a stabilized plasma.

Abstract: In one embodiment, a method for forming a dielectric stack on a substrate is provided which includes depositing a first layer of a dielectric material on a substrate surface, exposing the first layer to a nitridation process, depositing a second layer of the dielectric material on the first layer, exposing the second layer to the nitridation process, and exposing the substrate to an anneal process. In another embodiment, a method for forming a dielectric material on a substrate is provided which includes depositing a metal oxide layer substantially free of silicon on a substrate surface, exposing the metal oxide layer to a nitridation process, and exposing the substrate to an anneal process.

Abstract: Methods are provided for vapor deposition coating of hydrophobic materials and applications thereof. The method for making a hydrophobic material includes providing a natural mineral, providing a silicone-based material, heating the silicone-based material to release vaporous molecules of the silicone-based material, and depositing the vaporous molecules of the silicone-based material to form a layer of the silicone-based material on surfaces of the natural mineral.

Abstract: A method of making a coated metal article comprises (a) forming a hardcoat layer on at least a portion of a surface of a metal or metalized substrate by physical vapor deposition; (b) forming a tie layer comprising silicon, oxygen, and hydrogen on at least a portion of the surface of the hardcoat layer by plasma deposition; and (c) applying an at least partially fluorinated composition comprising at least one silane group to at least a portion of the surface of the tie layer.

Abstract: A duplex coating scheme and associated method of formation, which includes a siloxane based soft coating and a plasma based SiOxCy hard coating used in combination to improve the durability of acrylic substrates used in aircraft window applications.

Abstract: Syringes for holding fluids susceptible to void formation when the syringe and fluid are frozen and thawed before use. The interior surface of the syringe barrel is modified by exposure to a plasma such that the incidence of void formation in the fluid is prevented or, at the least, significantly reduced in comparison with conventional syringes.

Abstract: This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

Abstract: Provided is a process for producing a multilayer film which, even when bent, is less apt to decrease in barrier property or electrical conductivity. The process comprises forming a barrier film and a transparent conductive film on a resin film to produce a multilayer film. The barrier film is formed by a plasma enhanced CVD method which uses electric discharge between rolls. The transparent conductive film is preferably formed by physical vapor deposition. The resin film preferably is a polyester resin film or a polyolefin resin film.

Abstract: A moisture-proof film (10) includes a moisture-proof part (12) formed on a surface of a film body (11). The moisture-proof part (12) includes a first layer (11a) made of a silicon oxycarbonitride compound containing carbon atoms in a composition thereof, and a second layer (11b) made of a silicon oxynitride compound which, in a composition thereof, contains carbon atoms less than those of the first layer (11a) or does not contain carbon atoms, and having a density higher than that of the first layer (11a). The first and second layers (11a, 11b) are stacked adjoining each other. The first layer (11a) has a density increasing toward the second layer (11b).

Abstract: A method of forming a gas barrier layer comprises: forming a first layer over a substrate by plasma-enhanced CVD at a first pressure, at least a part of a surface of the substrate being made of an organic material; and forming a second layer on the first layer by plasma-enhanced CVD at a second pressure which is lower than the first pressure.