Abstract: In various embodiments, systems, methods, and apparatus are provided for stabilizing filaments in a chemical vapor deposition (CVD) reactor system. A system includes a base plate having a plurality of electrical connections, a pair of filaments extending from the base plate, and a stabilizer connecting the pair of filaments. Each filament is in electrical contact with, and defines a conductive path between, the two electrical connections. A method of stabilizing the filaments includes providing the pair of filaments, and connecting the pair of filaments with at least one stabilizer. The stabilizer may include an electrically insulating material.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: Provided are a solid oxide fuel cell including: an anode support; a solid electrolyte layer formed on the anode support; and a composite cathode layer formed on the solid electrolyte layer, wherein the composite cathode layer is a porous sintered phase comprising an electrode material and an electrolyte material and a method for preparing same. The solid oxide fuel cell which includes a post-heat-treated nanocomposite cathode, which exhibits high interfacial strength and superior conductivity, exhibits superior power efficiency as well as superior durability.

Abstract: Polymer article having a thin coating on at least one of its side, characterized in that said coating comprises a first coating of SiOxCyH2 which is a plasma polymerized tetramethylsilane deposited on the surface on said polymer article, the x value being between 0 and 1.7, the y value being between 0.5 and 0.8, the z value being between 0.35 and 0.6 for said first SiOxCyHz coating and a second coating of SiOxCyHz which is a plasma polymerized tetramethylsilane deposited on the surface on said first coating, the x value being between 1.7 and 1.99, the y value being between 0.2 and 0.7, the z value being between 0.2 and 0.35 for said second SiOxCyHz coating and in that the thickness of said first coating is from about 1 nanometer to about 15 nanometers and in that the thickness of said second coating is from about 10 nanometers to about 100 nanometers, preferentially around 30 nanometers.

Abstract: A method for forming porous insulating film using cyclic siloxane raw material monomer, includes forming porous insulating film using the mixed gas of a cyclic organosiloxane raw material and a compound raw material including a part of chemical structure including the cyclic organosiloxane raw material. The compound raw material may include a compound including a part of side chain of the cyclic organosiloxane raw material.

Abstract: Embodiments of process chambers and methods for performing HWCVD processes within such process chambers and depositing a thin film from two or more source compounds on a surface of a substrate are provided. In some embodiments, the process chamber includes a showerhead assembly disposed between a metal filament assembly and a substrate processing zone. The showerhead assembly includes a showerhead body and a dual-zone face plate with a plurality of first channels and second channels therein. A first source compound is delivered through the metal filament assembly to form radicals of the first source compound and pass through the first channels into the substrate processing zone without forming any plasma. A second source compound is delivered through the showerhead body into the second channels of the dual-zone face plate without passing through the metal filament assembly and without contacting the radicals until reaching the substrate processing zone.

Abstract: Embodiments relate to applying a magnetic field across the paths of injected polar precursor molecules to cause spiral movement of the precursor molecules relative to the surface of a substrate. When the polar precursor molecules arrive at the surface of the substrate, the polar precursor molecules make lateral movements on the surface due to their inertia. Such lateral movements of the polar precursor molecules increase the chance that the molecules would find and settle at sites (e.g., nucleation sites, broken bonds and stepped surface locations) or react on the surface of the substrate. Due to the increased chance of absorption or reaction of the polar precursor molecules, the injection time or injection iterations may be reduced.

Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.

Abstract: The invention relates to a method for depositing one or more thin layers. In said method, a process gas forming a polymer streams into a deposition chamber (8) along with a carrier gas by means of a gas inlet element (3) in order to deposit a thin layer, in particular in the form of a polymer, on the surface (7?) of a substrate (7) which lies on a supporting surface (4?) of a susceptor, said supporting surface (4?) lying opposite the gas inlet element (3), at a distance therefrom. In order to allow the coating process to be carried out at substrate temperatures that only slightly exceed the temperature of the supporting surface of the susceptor, the gas inlet element (3) and/or the supporting surface (4?) are/is temperature-controlled in such a way that the temperature (TS) of the supporting surface (4?) is lower than the temperature (TG) of the gas inlet element (3).

Abstract: A nanocomposite article that includes a single-crystal or single-crystal-like substrate and heteroepitaxial, phase-separated layer supported by a surface of the substrate and a method of making the same are described. The heteroepitaxial layer can include a continuous, non-magnetic, crystalline, matrix phase, and an ordered, magnetic magnetic phase disposed within the matrix phase. The ordered magnetic phase can include a plurality of self-assembled crystalline nanostructures of a magnetic material. The phase-separated layer and the single crystal substrate can be separated by a buffer layer. An electronic storage device that includes a read-write head and a nanocomposite article with a data storage density of 0.75 Tb/in2 is also described.

Abstract: Discontinuous diamond particulate containing metal matrix composites of high thermal conductivity and methods for producing these composites are provided. The manufacturing method includes producing a thin reaction formed and diffusion bonded functionally graded interactive SiC surface layer on diamond particles. The interactive surface converted SiC coated diamond particles are then disposed into a mold and between the particles and permitted to rapidly solidify under pressure. The surface conversion interactive SiC coating on the diamond particles achieves minimal interface thermal resistance with the metal matrix which translates into good mechanical strength and stiffness of the composites and facilitates near theoretical thermal conductivity levels to be attained in the composite. Secondary working of the diamond metal composite can be performed for producing thin sheet product.

Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

Abstract: An apparatus for atomic layer deposition of a material on a moving substrate comprises a conveying arrangement for moving a substrate along a predetermined planar or curved path of travel and a coating bar having at least one precursor delivery channel. The precursor delivery channel conducts a fluid containing a material to be deposited on a substrate toward the path of travel. When in use, a substrate movable along the path of travel defines a gap between the outlet end of the precursor delivery channel and the substrate. The gap defines an impedance Zg to a flow of fluid from the precursor delivery channel. A flow restrictor is disposed within the precursor delivery channel that presents a predetermined impedance Zfc to the flow therethrough. The restrictor is sized such that the impedance Zfc is at least five (5) times, and more preferably at least fifteen (15) times, the impedance Zg. The impedance Zfc has a friction factor f.

Abstract: Methods of making components having calcium magnesium aluminosilicate (CMAS) mitigation capability involving providing a component; applying an environmental barrier coating to the component, the environmental barrier coating having a separate CMAS mitigation layer including a CMAS mitigation composition selected from rare earth elements, rare earth oxides, zirconia, hafnia partially or fully stabilized with alkaline earth or rare earth elements, zirconia partially or fully stabilized with alkaline earth or rare earth elements, magnesium oxide, cordierite, aluminum phosphate, magnesium silicate, and combinations thereof.

Abstract: A method of preparing a surface for deposition of a thin film thereon, wherein the surface including a plurality of protrusions extending therefrom and having shadowed regions, includes locally treating at least one of the protrusions.

Abstract: A system, apparatus and method employing carbon nanotubes on substrates such as silicon, titanium, copper, stainless steel and other substrates, where the carbon nanotubes are blacker than existing paints and coatings, thereby providing an exponential increase in stray light suppression depending on the number of bounces of such treated surfaces. Additionally, the present invention is directed to techniques to better absorb and radiate unwanted energies. Further, the alternate substrates offer strength of material for numerous components and in numerous physical applications. The present invention is also directed to techniques for improving the adhesion of the nanotubes to the alternate substrate materials and also extending the wavelength of operation from the near ultraviolet to the far infrared portion of the spectrum (0.2 microns to 120 microns wavelength).

Abstract: Substantially defect-free titanium aluminide components and methods are provided for manufacturing the same from articles formed by consolidation processes. The method includes providing an intermediate article comprised of a titanium aluminide alloy and formed by a consolidation process. The intermediate article is encapsulated with an aluminum-containing encapsulation layer. The intermediate article is compacted after the encapsulation step. A substantially defect-free titanium aluminide component comprises a compacted three-dimensional article comprised of titanium aluminide and formed by a consolidation process and an aluminum-containing encapsulation layer on at least one surface of the compacted three-dimensional article. The aluminum-containing encapsulation layer comprises an aluminide material, MCrAlY wherein M is cobalt, nickel, or a combination of cobalt and nickel, or TiAlCr.

Abstract: Provided is a technique for electroless deposition (ELD) for forming metal conductive layer on an insulating substrate made of glass, polymer, etc. According to an aspect, an adhesive layer and a catalyst layer are formed on a substrate using a dry deposition method, such as are plasma deposition (APD) or sputtering, etc., and electroless deposition is performed thereon, thereby forming a metal thin, film. Therefore, it is possible to significantly simplify a complicated pretreatment process required for electroless depositions and increase adhesive strength of a deposited metal thin film.

Abstract: A method of forming a standard mask for an inspection system is provided, the method comprising providing a substrate within a chamber, and providing a tetraethylorthosilicate (TEOS) precursor within the chamber. The method further includes reacting the TEOS precursor with an electron beam to form silicon oxide particles of controlled size at one or more controlled locations on the substrate, the silicon oxide particles disposed as simulated contamination defects.

Abstract: The present invention provides a hydrogen separation membrane based on nanoporous, composite metal carbide or metal sulfide coated membranes capable of high flux and permselectivity for hydrogen without platinum group metals. The present invention is capable of being operated over a broad temperature range, including at elevated temperatures, while maintaining hydrogen selectivity.

Abstract: Compositions and methods for depositing elemental metal M(0) films on semiconductor substrates are disclosed. One of the disclosed methods comprises: heating the semiconductor substrate to obtain a heated semiconductor substrate; exposing the heated semiconductor substrate to a composition containing a metal precursor, an excess amount of neutral labile ligands, and a supercritical solvent; exposing the metal precursor to a reducing agent and/or thermal energy at or near the heated semiconductor substrate; reducing the metal precursor to the elemental metal M(0) by using the reducing agent and/or the thermal energy; and depositing the elemental metal M(0) film while minimizing formation of metal oxides.

Abstract: A method of depositing a material on a work piece surface. The method comprising providing a deposition precursor gas at the work piece surface; providing a purification compound including a nitrogen-containing compound at the work piece surface; and directing a beam toward a local region on the work piece surface, the beam causing decomposition of the precursor gas to fabricate a deposit on the work piece surface, the deposited material including a contaminant, the purification compound causing a reduction in the concentration of the contaminant and providing a deposited material that includes less contamination than a material deposited using the same methodology but without using a purification compound.

Abstract: Systems and methods for applying a graphene nanocrystalline layer on a substrate in a vacuum chamber including positioning the substrate in the vacuum chamber, evacuating the vacuum chamber to a pressure of less than 10?3 torr, and applying an electrical current to the glassy carbon filament to generate graphene carbon, in which the substrate is positioned in a location to receive at least a portion of the graphene carbon upon the application of current.

Abstract: An exemplary embodiment provides coated polymeric substrates that have a polymeric substrate body with a coated surface. The surface coating includes more than one pair of coating layers. Each pair of coating layers includes a first applied coating layer and a second applied coating layer. In addition, an indicator, applied on top of or between coating layers, provides an indication of wear of the coating. The first and second applied coating layers have a thickness between about 3 to about 10 nanometers. The coating exhibits a Hall-Petch effect.

Abstract: A ceramic material is applied to a part. The part is placed in a deposition chamber and a first electric potential is applied to the part. Components are evaporated for forming the material. The evaporated components are ionized. The first electric potential is modulated so as to draw the ionized component to the part. The modulation comprises maintaining at least an ion current density in a range of 2-1000 mA/cm2.

Abstract: The invention relates to a coating comprising at least one molybdenum-containing layer having molybdenum oxide, said molybdenum being essentially molybdenum monoxide. The invention further relates to a PVD process for producing the disclosed coating, in which the layer comprising the molybdenum monoxide is produced using arc evaporation. The invention also relates to a component that has said coating.

Abstract: A fluidized bed reactor is disclosed. The fluidized bed reactor includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas comprising silicon elements to the silicon particles provided in the reaction pipe; and a heater unit configured to supply heat to an internal space of the reaction pipe, with a heater channel in which inert gas flows serially.

Abstract: A fluidized bed reactor is disclosed. The fluidized bed reactor includes a head; a first body part connected with the head, located under the head, the first body part having a first reaction pipe provided therein; a second body part connected with the first body part, located under the first body part, the second body part having a second reaction pipe provided therein; and a bottom part connected with the second body part, located under the second body part, the bottom part having a flowing-gas supply nozzle, a reaction gas supply nozzle, a heater and an electrode assembled thereto.

Abstract: A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N2), and hydrogen (H2) is added to the reaction gas at a time after the deposition of a thin film occurs.

Abstract: Conductive carbon films having a resistivity of less than about 0.2 Ohm-cm, preferably less than about 0.05 Ohm-cm, are deposited by PECVD. Conductive carbon films are essentially free of sp3-hybridized carbon and contain predominantly sp2 carbon, based on IR spectral features. Carbon content of the films is at least about 75% atomic C. Conductive carbon films may contain hydrogen, but are typically hydrogen-poor, containing less than about 20% H. In some embodiments, conductive carbon films further contain nitrogen (N). For example, conductive films having a CxHyNz composition, where nitrogen is present at between about 5-10% atomic, have both high conductivity and low roughness, because introduction of nitrogen delays formation of crystallites in the film. The films are deposited at a process temperature of at least about 620° C., and at a pressure of less than about 20 Torr in a dual-frequency plasma process dominated by low frequency (LF) plasma.

Abstract: Apparatus and methods for detecting evaporation conditions in an evaporator for evaporating metal onto semiconductor wafers, such as GaAs wafers, are disclosed. One such apparatus can include a crystal monitor sensor configured to detect metal vapor associated with a metal source prior to metal deposition onto a semiconductor wafer. This apparatus can also include a shutter configured to remain in a closed position when the crystal monitor sensor detects an undesired condition, so as to prevent metal deposition onto the semiconductor wafer. In some implementations, the undesired condition can be indicative of a composition of a metal source, a deposition rate of a metal source, impurities of a metal source, position of a metal source, position of an electron beam, and/or intensity of an electron beam.

Abstract: Rare-earth-free, noble-metal-free nanostructured magnetic material thin films and methods of synthesis are described. Magnetocrystalline, ferrimagnetic thin films with islands of aligned single magnetic domains possess large coercivity. In particular, MnxGa thin films are described. These materials provide a potential substitute to rare-earth-based and noble-metal-based magnets in applications related to electric motors and generators, audio headphones and speakers, recording media and magnetic hard drive memory.

Abstract: A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work piece. Because the plasma and the ions in the reactive gas can have low kinetic energy, there can be little or no surface damage. This is particularly useful for deposition processes. When it is desired to etch material, the reactive ions can be more energetic to enhance etching.

Abstract: An apparatus for treating an object, for example an object made of polymer for a light or headlamp of an automotive vehicle, comprises a vacuum chamber in which the object is intended to be placed; means for placing the chamber under vacuum; and ion bombardment means intended for treating the object, comprising an ion generator and at least one ion applicator intended to emit an ion beam. This apparatus comprises, in addition: a first airlock; means for selectively placing the vacuum chamber in communication with the first airlock and means for placing the first airlock under vacuum. The ion bombardment means are arranged outside of the vacuum chamber. The ion applicator is housed in the first airlock.

Abstract: A substrate processing apparatus comprising: a processing chamber which is to accommodate at least one substrate; a gas supply system which is to supply processing gas into the processing chamber; an exhaust system which is to exhaust atmosphere in the processing chamber; and at least one pair of electrodes which are to bring the processing gas into an active state and which are accommodated in protection tubes such that the electrodes can be inserted into and pulled out from the protection tubes, wherein the electrodes are accommodated in the protection tube in a state where at least a portion of the electrodes is bent, and the electrodes are formed of flexible members, is disclosed.

Abstract: An apparatus for coating substrates with a coating material is disclosed. The apparatus includes a frame and a crucible arrangement including a first crucible and a second crucible disposed on the frame. Only one first shaft is associated with the first crucible and only one second shaft is associated with the second crucible, where the only one first and second shafts are disposed in the frame beneath the first and second crucibles, respectively. Only one first lifting device is associated with the only one first shaft and only one second lifting device is associated with the only one second shaft, where the only one first and second lifting devices are disposed in the frame. The only one first and second shafts and the only one first and second lifting devices are laterally displaceable with the frame.

Abstract: A system for nano-photolithography, a superlens device, and a method for fabricating the superlens device. A system for three-dimensional nano-photolithography includes a light source having a predetermined light wavelength, a device to be patterned, a photoresist layer of photoresponsive material photoresponsive to the predetermined light wavelength formed on the device, and a superlens device in contact with the photoresist layer. The superlens device includes a superlens layer in contact with the photoresist layer, a light permissive mask layer transparent to the predetermined light wavelength and having a layer of nanopatterned opaque features formed thereon, and an intermediate layer separating the superlens layer and the light permissive mask layer by a predetermined distance. The light source is located to radiate light at the predetermined light wavelength on the light permissive mask layer. The layer of nanopatterned opaque features includes a layer of opaque features with varying height dimensions.

Abstract: An improved substrate is disclosed for an electrode of an electrochemical cell. The improved substrate includes a core material surrounded by a coating. The coating is amorphous such that the coating includes substantially no grain boundaries. The core material may be one of lead, fiber glass, and titanium. The coating may be one of lead, lead-dioxide, titanium nitride, and titanium dioxide. Further, an intermediate adhesion promoter surrounds the core material to enhance adhesion between the coating and the core material.

Abstract: A web of a polymer film (1) is coated with an oxide layer, in particular with an SiOx barrier layer, by transporting the web with the aid of a rotatable drum (12) through a plurality of flame bands, which are directed in a radial direction from above against the circumferential surface of the drum, which extend at a distance from each other across the width of the web being supported and transported on this circumferential surface, and which are fed with a gas mixture including a combustible gas, an oxidant, and a silicon containing compound. Therein the circumferential surface of the rotatable drum is cooled to a predetermined temperature and the web is transported through the area of the tip of the inner flame region. Polymer films with barrier layers produced in the named way have at small layer thicknesses of less than 10 nm very good barrier properties.

Abstract: A toughening agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent selected from the group consisting of an amine, an onium compound and an alkali metal hydroxide.

Abstract: The invention relates to a transparent glass substrate, associated with a transparent electro-conductive layer capable of constituting an electrode of a photovoltaic cell and composed of a doped oxide, characterized by the interposition, between the glass substrate and the transparent electroconductive layer, of a mixed layer of one or more first nitride(s) or oxynitride(s), or oxide(s) or oxycarbide(s) having good adhesive properties with glass, and one or more second nitride(s) or oxynitride(s) or oxide(s) or oxycarbide(s) capable of constituting, possibly in the doped state, a transparent electroconductive layer; a method for producing this substrate; a photovoltaic cell, a tempered and/or curved glass, a shaped heating glass, a plasma screen and a flat lamp electrode having this substrate.

Abstract: In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition.

Abstract: A sliding element, in particular piston ring, has on at least one running surface, from the inside outwards, a coating having a metal-containing adhesive layer and a ta-C type DLC layer with a thickness of at least 10 ?m. In a process for the production of a sliding element, in particular a piston ring, coating with a metal-containing adhesive layer and a ta-C type DLC layer in a thickness of at least 10 ?m is carried out.

Abstract: A chargeable and dischargeable secondary battery for use in electronic devices, industrial machines, electric-powered vehicles, is provided, along with an anodic electrode and a copper foil for anode current collector. It is an anode for secondary battery that utilizes non-aqueous electrolyte, which comprises a silicon-type active material film formed on one side or both sides of a current collector made of copper foil or copper alloy foil, wherein 1 g/m2 to 14 g/m2 of silicon-type active material film is formed on said current collector, and the lightness Y value in a XYZ colorimetric system (CIE 1931 standard colorimetric system) for the surface of said anode, onto which said silicon-type active material film is formed, is 15 to 50, and the surface roughness (ten point average roughness) Rz specified by the Japanese Industrial Standards (JIS B0601-1994 ten point average roughness) is 1.0 ?m or more and 4.5 ?m or less.

Abstract: Provided herein are nanoparticulate coated structures and methods of making structures. The structures comprise a support element, a nanoparticulate layer, and a binder disposed on the support element, wherein the binder comprises an alkali silicate or borate. In addition, methods of making the structures and uses of the described structures are described herein.

Abstract: The present invention provides a manufacturing method of a semiconductor device that has a rapid film formation rate and high productivity, and to provide a substrate processing apparatus.

Abstract: Provided is a magnetic disk (10) for a magnetic recording, which comprises a magnetic layer (4) for a magnetic recording, a protecting layer (5) formed over the magnetic layer (4) for protecting the magnetic layer (4), and a lubricating layer (6) formed over the protecting layer (5). The protecting layer (5) is a layer composed substantially of carbon, hydrogen and nitrogen. The atomic ratio (N/C) of nitrogen and carbon, which was calculated from the spectral intensities of N1s and C1s detected for a detection angle of 7 degrees of photoelectrons by an angularly resolved X-ray photoelectron spectroscopy, is 0.15 to 0.25. This constitution of the protecting layer (5) is excellent in wear resistance and sliding characteristics even for a film thickness of 3 nm or less and provides a magnetic disk which can avoid a high fly write trouble or the like.

Abstract: A method including applying an electric charge to a substrate in a chamber; introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including applying a removable electric charge to a substrate; in the presence of the applied electric charge, introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent with an externally applied electric charge.

Abstract: Methods of making components having calcium magnesium aluminosilicate (CMAS) mitigation capability include providing a component, applying an environmental barrier coating to the component, where the environmental barrier coating includes a CMAS mitigation composition selected from the group consisting of zinc aluminate spinel, alkaline earth zirconates, alkaline earth hafnates, rare earth gallates, beryl, and combinations thereof.

Abstract: Methods are provided of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. The fluent gas has an average molecular weight less than 5 amu. A first high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a first deposition/sputter ratio.