Abstract: A thermally and electrically conductive structure comprises a carbon nanotube (110) having an outer surface (111) and a carbon coating (120) covering at least a portion of the outer surface of the carbon nanotube. The carbon coating may be applied to the carbon nanotube by providing a nitrile-containing polymer, coating the carbon nanotube with the nitrile-containing polymer, and pyrolyzing the nitrile-containing polymer in order to form the carbon coating on the carbon nanotube. The carbon nanotube may further be coated with a low contact resistance layer (130) exterior to the carbon coating and a metal layer (140) exterior to the low contact resistance layer.

Abstract: The process for producing polycrystalline silicon by feeding a reaction gas containing a silane gas and a hydrogen gas into a reaction vessel equipped with silicon core members erected on the electrodes, heating the silicon core members by flowing an electric current thereto to a temperature at which silicon deposits, forming polycrystalline silicon rods by allowing the formed silicon to deposit on the silicon core members, and discharging the discharge gas after the reaction from the reaction vessel, wherein the discharge gas discharged from the reaction vessel is quenched so that the temperature thereof drops from 800° C. down to 500° C. in not longer than 0.1 second.

Abstract: A precursor delivery system for an irradiation beam instrument having a vacuum chamber includes an injection tube for injecting gasses into the vacuum chamber of the instrument and a main gas line having an inlet and an outlet. The outlet is connected to the injection tube, and the inlet is connected to a sequential pair of valves connected to a carrier gas source. A crucible for holding precursor material is selectively connected to the main gas line at a location between the pair of valves and the injection tube. The source of carrier gas may be selectively connected to the inlet by sequential operation of the pair of carrier gas valves, so that pulses of carrier gas assist the flow of precursor material to the injection tube. Rapid purging of the system between precursors is enabled by a valve selectively connecting the main line to an envelope in communication with the instrument vacuum. Methods of CVD and etching using the system are also disclosed.

Abstract: A chemical vapor deposition (CVD) reactor comprises a deposition zone, a substrate carrier and a liner assembly. The deposition zone is constructed so as to have a positive pressure reactant gases fixed showerhead introducing reactant gas supporting thin film CVD deposition. The substrate carrier movably supports a substrate and the liner assembly within the deposition zone and is heated so as to be subjected to a CVD process. The liner assembly partly encloses selected portions of the deposition zone, particularly portions of the substrate carrier and thereby enclose a hot zone surrounding a substrate to be processed so as to retain heat in that zone but allows gas flow radially outwardly toward walls of a surrounding cold-wall reactor with exhaust ports surrounding the deposition zone that exhaust spent reactant gases. The liner assembly is a sink for solid reaction byproducts while gaseous reaction byproducts are pumped out at the exhaust ports.

Abstract: In-situ flux measurement methods, devices, and systems are provided. According to some embodiments, an in-situ molecular flux device generally comprises a electrically conductive container configured to hold a precursor material, a heat source proximate the electrically conductive container to heat the precursor material to release ions such that an ion current is produced; and a current-measuring device in electrical communication with the electrically conductive container to measure the ion current associated with the heated precursor material. Other embodiments are also claimed and described.

Abstract: Methods and apparatus for thermal barrier coatings are provided. The thermal barrier coating system includes a bond coat, a first thermal barrier coating comprising a thermal conductivity, kA having a first value, and a second thermal barrier coating including a thermal conductivity, kB having a second value wherein the second value is different than the first value.

Abstract: Disclosed are a current collector for a flexible electrode, a method of manufacturing the same, and a negative electrode including the same. The current collector for a flexible electrode includes: a flexible polymer substrate; a cross-linkable polymer layer disposed on the polymer substrate; and a metal layer disposed on the cross-linkable polymer layer, wherein the surface of the cross-linkable polymer layer includes a plurality of protrusions and grooves.

Abstract: An electric field is formed between a material to be coated 18 and a coating sprayer 4 by applying a high voltage of ?1 kV to ?90 kV to an electrode needle 7 at a tip of the coating sprayer 4, while maintaining the material to be coated 18 positively. An inert gas is sprayed from an inert gas spraying nozzle 8 to the material to be coated 18, and a solution having a dielectric substance dissolved in a solvent is simultaneously sprayed from a dielectric solution spraying nozzle 6, while giving negative charge to the dielectric solution, to form a precursor polarization film. The solution is discharged from the spraying nozzle 6 by injecting the inert gas in the spraying nozzle 6. Then, the electric field is formed again and the precursor polarization film is further polarized, to thereby form a piezoelectric/pyroelectric film on the material to be coated 18.

Abstract: An improved method of beam deposition to deposit a low-resistivity metal. Preferred embodiments of the present invention use a novel focused ion beam induced deposition precursor to deposit low-resistivity metallic material such as tin. Applicants have discovered that by using a methylated or ethylated metal such as hexamethylditin as a precursor, material can be deposited having a resistivity as low as 40 ??·cm.

Abstract: A method for affecting film growth on a substrate during a deposition process includes steps of: applying a first voltage or current to a first zone of a chuck adapted to hold the substrate in position, the film growth on at least a portion of the substrate proximate the first zone being affected as a function of a level of the first voltage or current; and applying a second voltage or current to a second zone of the chuck, the film growth on at least a portion of the substrate proximate the second zone being affected as a function of a level of the second voltage or current.

Abstract: A bi-laterally surfaced substrate in which the first surface consists of one or more than one of cerium oxide, aluminum oxide, tin oxide manganese oxide, copper oxide, cobalt oxide, nickel oxide, praseodymium oxide, terbium oxide, ruthenium, rhodium, palladium, silver, iridium, platinum and gold and the second surface consists of one or more than one of ruthenium, rhodium, palladium, silver, iridium, platinum and gold and micro channel micro component reactors including such substrates in a predetermined formed shape and methods for making the same utilizing a thermal spray on one side and a physical deposition process on the other side.

Abstract: A method for forming a film by atomic layer deposition wherein vertical growth of a film is controlled, includes: (i) adsorbing a metal-containing precursor for film formation on a concave or convex surface pattern of a substrate; (ii) oxidizing the adsorbed precursor to form a metal oxide sub-layer; (iii) adsorbing a metal-free inhibitor on the metal oxide sub-layer more on a top/bottom portion than on side walls of the concave or convex surface pattern; and (iv) repeating steps (i) to (iii) to form a film constituted by multiple metal oxide sub-layers while controlling vertical growth of the film by step (iii).

Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

Abstract: A composite material including a carrier g of aluminum, an optically effective multi-layer system applied to a side (A) of the carrier. The system having at least 2 dielectric and/or oxidic layers, namely an upper layer and a lower, light-absorbing layer. The lower, light-absorbing layer contains a titanium-aluminum mixed oxide TiAlqOx and/or a titanium-aluminum makes nitride TiAlqNy and/or a titanium-aluminum mixed oxynitride TiAlqOxNy, while the upper layer is an oxidic layer made of titanium, silicon or tin of the chemical composition TiOz, SiOw, or SnOv, where the indices q, v, w, y and z each denote a stoichiometric or nonstoichiometric ratio.

Abstract: Various aspects of the present invention pertain to porous membranes that comprise: (1) a plurality of pores with pore sizes of more than about 0.1 ?m in diameter; and (2) a plurality of hydrophilic molecules. Additional aspects of the present invention pertain to methods of separating organic compounds from a liquid sample by: (1) providing the porous membrane; and (2) flowing the liquid sample through the porous membrane in order to retain organic compounds on the porous membrane. Further aspects of the present invention pertain to systems for separating organic compounds from a liquid sample. Such systems comprises: (1) the porous membrane; and (2) a flowing unit that enables the liquid sample to flow through the porous membrane. Additional aspects of the present invention pertain to methods of making the above-described porous membranes by: (1) coating a surface of a porous membrane containing 0.

Abstract: Embodiments relate to applying a magnetic field across the paths of injected polar precursor molecules to cause spiral movement of the precursor molecules relative to the surface of a substrate. When the polar precursor molecules arrive at the surface of the substrate, the polar precursor molecules make lateral movements on the surface due to their inertia. Such lateral movements of the polar precursor molecules increase the chance that the molecules would find and settle at sites (e.g., nucleation sites, broken bonds and stepped surface locations) or react on the surface of the substrate. Due to the increased chance of absorption or reaction of the polar precursor molecules, the injection time or injection iterations may be reduced.

Abstract: A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

Abstract: In a method for processing a nanotube, a vapor is condensed to a solid condensate layer on a surface of the nanotube and then at least one selected region of the condensate layer is locally removed by directing a beam of energy at the selected region. The nanotube can be processed with at least a portion of the solid condensate layer maintained on the nanotube surface and thereafter the solid condensate layer removed. Nanotube processing can include, e.g., depositing a material layer on an exposed nanotube surface region where the condensate layer was removed. After forming a solid condensate layer, an electron beam can be directed at a selected region along a nanotube length corresponding to a location for cutting the nanotube, to locally remove the condensate layer at the region, and an ion beam can be directed at the selected region to cut the nanotube at the selected region.

Abstract: An isotope-doped nano-structure of an element is provided. The isotope-doped nano-structure includes at least one isotope-doped nano-structure segment having at least two isotopes of the element, and the at least two isotopes of the element are mixed uniformly in a certain proportion. The present disclosure also provides a method for making the isotope-doped nano-structures, and a labeling method using the isotope-doped nano-structures.

Abstract: A method of making a cathode structure for an OLED provided over organic layers includes evaporating a first layer over the organic layers, such layer including a metal or metal alloy whose work function is less that 4.0 eV, or a material including an electron-injecting dopant and a reactive metal; depositing at least one second layer of an inorganic material over the first layer to form a buffer structure with the first layer; and sputtering a protective layer of a metal or metal alloy provided over the buffer structure.

Abstract: One end side of a core wire holder 20 is formed into a shape of a truncated cone and has an inclined surface. In the end portion, an opening 22 is provided, and a hollow portion 21 is formed, a silicon core wire 5 being inserted into the hollow portion 21 and held therein. On the surface of the silicon core wire 5, polycrystalline silicon 6 is vapor deposited by the Siemens method to produce a polycrystalline silicon rod. On the inclined surface of the truncated cone portion in the vicinity of the opening 22, as a thermal insulating layer, annular slits 23a to 23c are formed from an outer circumferential surface in the vicinity of the opening toward the hollow portion 21. The annular slit acts as a thermal insulating portion, and suppresses escape of the heat to heat the one end side of the core wire holder 20.

Abstract: The specification describes a method for selectively depositing carbon nanotubes on the end face of an optical fiber. The end face of the optical fiber is exposed to a dispersion of carbon nanotubes while light is propagated through the optical fiber. Carbon nanotubes deposit selectively on the light emitting core of the optical fiber.

Abstract: A method for making a carbon nanotube film, the method comprising the following steps of: (a) supplying a substrate; (b) forming at least one strip-shaped catalyst film on the substrate, a width of the strip-shaped catalyst films ranging from approximately 1 micrometer to 20 micrometers; (c) growing at least one strip-shaped carbon nanotube array on the substrate using a chemical vapor deposition method; and (d) causing the at least one strip-shaped carbon nanotube array to fold along a direction parallel to a surface of the substrate, thus forming at least one carbon nanotube film.

Abstract: A process of preparing a lamella from a substrate includes manufacturing a protection strip on an edge portion of the lamella to be prepared from the substrate, and preparing the lamella, wherein the manufacturing the protection strip includes a first phase of activating a surface area portion of the substrate, and a second phase of electron beam assisted deposition of the protective strip on the activated surface area portion from the gas phase.

Abstract: Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein: R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.

Abstract: A temperature control module for a semiconductor processing chamber comprises a thermally conductive component body, one or more channels in the component body and one or more tubes concentric therewith, such that gas filled spaces surround the tubes. By flowing a heat transfer liquid in the tubes and adjusting the gas pressure in the spaces, localized temperature of the component body can be precisely controlled. One or more heating elements can be arranged in each zone and a heat transfer liquid can be passed through the tubes to effect heating or cooling of each zone by activating the heating elements and/or varying pressure of the gas in the spaces.

Abstract: Fluid ejection apparatuses and processes for making the same are disclosed. An apparatus for ejecting fluid droplets includes a substrate having a plurality of flow paths formed therein, each flow path including a respective pumping chamber and a respective nozzle, and the respective nozzle being configured to eject fluid droplets through a first surface of the substrate in response to actuation of the respective pumping chamber; and an actuation assembly including a drive electrode layer over a second surface of the substrate opposite to the first surface, a piezoelectric layer over the drive electrode layer, and a reference electrode layer over the piezoelectric layer, the drive electrode layer being patterned to define an individually controllable drive electrode over each of two or more pumping chambers in the substrate, and the reference electrode layer including a continuous reference electrode spanning the two or more pumping chambers in the substrate.

Abstract: A large spin-polarized current can be provided. A single crystal MgO layer is grown on an Si single crystal substrate, being lattice-matched. Thereon, a ferromagnetic metal layer is grown. Growth plane of MgO layer formed on (100) plane of Si single crystal substrate is (100) plane. At interface between Si single crystal substrate and MgO layer, Si (100) [110] and MgO (100) [100] directions are parallel. FIG. 2(A) shows Si (100) plane, FIG. 2(B) MgO (100) plane, and FIG. 2(C) the state of these two planes being lattice-matched. Si (100) plane in FIG. 2(A) is constituted by Si atoms 111 alone, while MgO (100) plane in FIG. 2(B) is constituted by Mg atoms 121 and oxygen (O) atoms 122. MgO (100) plane is grown on Si (100) plane, and as shown in FIG. 2(C), Si (100) [110] and MgO (100) [100] directions are parallel at the interface.

Abstract: A thermoelectric material includes powders having a surface coated with an inorganic material. The thermoelectric material includes a thermoelectric semiconductor powder and a coating layer on an outer surface of the thermoelectric semiconductor powders.

Abstract: Ni-based refractory metallic glass coatings utilizing periodic table group five element vanadium in combination with other group 5 or 6 elements, particularly tantalum, chromium, or molybdenum, can be formed via co-sputtering with proper control of carrier gas pressure and/or bias voltage. The alloy forms fully amorphous coatings that are not predicted by the usual glass forming ability (GFA) criteria. These alloys exhibit high thermal stability, hardness values greater than TiN, smooth surface finishes, and a wide processing window.

Abstract: An electrospray thruster and methods of manufacturing such thrusters are provided. The micro-electrospray thruster increases the thrust density of conventional electrospray thrusters by miniaturizing the individual components of the thruster thereby allowing for the increase in the number and density of the charged particle emitters.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: A method and apparatus for making an optical fiber preform, including injecting a plasma gas source into the first end of a tubular member; generating a ring plasma flame with the plasma gas source flowing through a plasma gas feeder nozzle, the plasma gas feeder nozzle including: an inner tube, an outer tube, wherein the plasma gas source is injected between the inner tube and the outer tube to produce the ring plasma flame, such that at least a portion of the ring plasma flame is directed radially toward the inner surface of the tubular member; traversing the tubular member along the longitudinal axis relative to the plasma flame; depositing at least one soot layer on the interior surface of the tubular member by introducing reagent chemicals into the plasma flame; and fusing all of the soot layers into a glass material on the interior surface of the tubular member.

Abstract: The present invention is a method for localized chemical vapor deposition (CVD) for localized growing for example for carbon nanotubes (CNT), nanowires, and oxidation using a heated tip or an array of heated tips to locally heat the area of interest. As the tips moved, material such as CNTs grows in the direction of movement. The Scanning Probe Growth (SPG) or nanoCVD technique has similarities to the CVD growth; however it allows for controlled synthesis and direction and eliminates the need for masks.

Abstract: An improved method for depositing an ultra low dielectric constant film stack is provided. Embodiments of the invention minimize k (dielectric constant) impact from initial stages of depositing the ultra low dielectric constant film stack by reducing a thickness of an oxide adhesion layer in the ultra low dielectric film stack (<2 k?) to about or less than 200 ?, thereby lowering the thickness non-uniformity of the film stack to less than 2%. The improved process deposits the oxide adhesion layer and the bulk layer in the ultra low dielectric film stack at lower deposition rate and lower plasma density in combination with higher total flow rate, resulting in better packing/ordering of the co-deposited species during film deposition which causes higher mechanical strength and lower porosity. The improved adhesion layer provides high adhesion energy for better adhesion with ultra low dielectric constant films to underlying barrier/liner layers.

Abstract: A method of fabricating a membrane having a tampered pore, a polymeric membrane having a tapered pore, and uses of such polymeric membrane are disclosed. The membrane includes apertures of increasing diameter which are aligned with each other to form the tapered pore.

Abstract: It is an objective of the invention to provide a slide part in which a seal member formed of an elastic body is in sliding contact with a hard member. There is provided a slide part comprising: a hard member having an amorphous carbon coating containing nitrogen formed on an outermost surface of a substrate; and a seal member formed of an elastic body, the seal member being in sliding contact with the hard member, wherein: content of the nitrogen in the coating is 3 at. % or more and 25 at. % or less, taking a total content of the carbon and the nitrogen in the coating as 100 at. %; the seal member contains fluorine at least in a sliding contact surface region thereof; and content of the fluorine in the surface region of the seal member is equal to or more than the nitrogen content in the coating.

Abstract: A method and apparatus are disclosed for improving densification of porous substrate using a film boiling process. In particular, the disclosed method and apparatus permit more complete densification of a substrate (i.e., densification closer to the surface of the substrate) by providing a sort of barrier that reduces cooling of the surface of the substrate being densified caused by contact with the relatively cool boiling liquid precursor of the densifying material, such as carbon. In particular, contact between the substrate and the liquid precursor is reduced using one or both of physical barriers (such as a mesh material) or structures that promote the formation of an insulating gaseous layer between the substrate and the liquid precursor (such as a plate closely spaced apart from the surface of the porous substrate).

Abstract: The present invention relates to a laser pattern mask, and a method for fabricating the same, which can prevent a laser pattern mask from being damaged by coating a protective film on a surface of a laser pattern mask for patterning an entire layer on a mother substrate at a time by laser ablation. The laser pattern mask includes a base substrate, a laser shielding pattern formed of a non-transparent metal on the base substrate to define laser pass through regions, and a protective film formed on an entire surface of the base substrate including the laser shielding pattern.

Abstract: A hydrogen-permeable film has a ceramic material of a nitride or oxide of a metal element belonging to group IVB, VB or VIB and hydrogen-permeable metal particles of at least one kind selected from palladium (Pd), niobium (Nb), vanadium (V), tantalum (Ta) and alloys thereof dispersed in the ceramic material. A ratio of the hydrogen-permeable metal particles in the hydrogen-permeable film is 20 to 70 mass %, and a thickness of the hydrogen-permeable film is 5 to 1,000 nm.

Abstract: A process of preparing a lamella from a substrate includes manufacturing a protection strip on an edge portion of the lamella to be prepared from the substrate, and preparing the lamella, wherein the manufacturing the protection strip includes a first phase of activating a surface area portion of the substrate, and a second phase of electron beam assisted deposition of the protective strip on the activated surface area portion from the gas phase.

Abstract: A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

Abstract: An environmental barrier for a substrate of ceramic matrix composite material containing silicon, in particular containing SiC, is formed by an anticorrosion protection layer containing an aluminosilicate type compound of an alkali or alkaline-earth or rare earth element, e.g. BSAS, with a chemical barrier forming layer of aluminum nitride being interposed between the substrate and the anticorrosion protection layer.

Abstract: A superconducting metallic glass transition-edge sensor (MGTES) and a method for fabricating the MGTES are provided. A single-layer superconducting amorphous metal alloy is deposited on a substrate. The single-layer superconducting amorphous metal alloy is an absorber for the MGTES and is electrically connected to a circuit configured for readout and biasing to sense electromagnetic radiation.

Abstract: An electron gun evaporation apparatus capable of efficiently using an evaporation source includes an electron beam position controller which determines, as an applicable range, a range within which the distribution of the film thickness growth rate is almost constant in each scanning direction of an electron beam to be applied to an evaporation source in a crucible for the irradiation position of the electron beam, on the basis of information pertaining to the electron beam irradiation position and the film thickness growth rate in the electron beam irradiation position.

Abstract: A process for forming a ceramic layer comprising a compound of a metal on a deposition surface of a workpiece comprises providing a reactive gas, selecting the amounts of a vapor of the metal and ions of the metal relative to each other, generating the metal vapor, and projecting an ion beam of the metal ions. The metal vapor, the metal ions, and the reactive gas form the ceramic layer with a desired structure. The process may include the step of controlling a deposition surface temperature. In one embodiment, the metal vapor comprises zirconium vapor and the ion beam comprises zirconium ions. The relative amounts of the zirconium vapor and the zirconium ions are selected to form a zirconia ceramic layer on the deposition surface. The zirconia may have multiple crystal phases that are formed according to a predetermined ratio.

Abstract: A method for manufacturing a solid-state battery device. The method can include providing a substrate within a process region of an apparatus. A cathode source and an anode source can be subjected to one or more energy sources to transfer thermal energy into a portion of the source materials to evaporate into a vapor phase. An ionic species from an ion source can be introduced and a thickness of solid-state battery materials can be formed overlying the surface region by interacting the gaseous species derived from the plurality of electrons and the ionic species. During formation of the thickness of the solid-state battery materials, the surface region can be maintained in a vacuum environment from about 10-6 to 10-4 Torr. Active materials comprising cathode, electrolyte, and anode with non-reactive species can be deposited for the formation of modified modulus layers, such a void or voided porous like materials.

Abstract: A binder material layer including an evaporation material is formed over a main surface of an evaporation source substrate, a substrate on which a film is formed is placed so that the binder material layer and a main surface thereof face each other, and heat treatment is performed on a rear surface of the evaporation source substrate so that the evaporation material in the binder material layer is heated to be subjected to sublimation or the like, whereby a layer of the evaporation material is formed on the substrate on which a film is formed. When a low molecular material is used for the evaporation material and a high molecular material is used for the binder material, the viscosity can be easily adjusted, and thus, film formation is possible with higher throughput than conventional film formation.

Abstract: A methodology and system for applying coatings onto the interior surfaces of components, includes a vapor creation device, a vacuum chamber having a moderate gas pressure and an inert gas jet having controlled velocity and flow fields. The gas jet is created by a rarefied, inert gas supersonic expansion through a nozzle. By controlling the carrier gas flow into a region upstream of the nozzle an upstream pressure is achieved. The carrier gas flow and chamber pumping rate control the downstream pressure. The ratio of the upstream to downstream pressure along with the size and shape of the nozzle opening controls the speed of the gas entering the chamber. Vapor created from a source is transported into the interior regions of a component using binary collisions between the vapor and gas jet atoms. These collisions enable the vapor atoms to scatter onto the interior surfaces of the component and deposit.

Abstract: A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate.