Abstract: A lithography system may utilize a biased sidewall chrome alternating aperture mask (SCAAM). Glass steps in the mask may be positioned at the center of the chrome sidewalls in chrome lines rather than the center of the chrome lines themselves.

Abstract: There is disclosed a polymer comprising: at least, a repeating unit of substitutable hydroxy styrene and a repeating unit of substitutable hydroxy vinylnaphthalene which are represented by the following general formula (1). There can be provided a polymer suitable as a base resin of a positive resist composition, in particular, a chemically amplified positive resist composition that can exhibit higher resolution than conventional positive resist compositions, that provides excellent pattern profiles after being exposed and that exhibits excellent etching resistance; a positive resist composition and a patterning process that use the polymer.

Abstract: There is disclosed a negative resist composition comprising, at least, a polymer comprising a repeating unit of hydroxy vinylnaphthalene represented by the following general formula (1). There can be provided a negative resist composition, in particular, a chemically amplified negative resist composition that can exhibit higher resolution than conventional hydroxy styrene or novolac negative resist compositions, that provides excellent pattern profiles after being exposed and that exhibits excellent etching resistance; and a patterning process that uses the resist composition.

Abstract: A novel color filter to be employed in a liquid crystal display device is disclosed. The color filter comprises at least two colored sub-pixels in each pixel; at least one of the colored sub-pixels in each pixel comprises a retardation-controlling agent; and retardation is substantially different from each other between the two colored sub-pixels.

Abstract: A reflection mask blank and a method of producing a reflection mask blank by forming, on a substrate, at least a multilayer reflection film for reflecting exposure light and an absorber layer formed on the multilayer reflection film for absorbing the exposure light. In order to avoid change over lapsed time in properties of the multilayer reflection film, the substrate with the multilayer reflection film is subjected to heat treatment. The heat treatment is during deposition and/or after deposition of the multilayer reflection film. A reflection mask is made from the reflection mask blank according to a reflection mask production method and a semiconductor is made from the reflection mask according to a semiconductor production method.

Abstract: A photoacid generator has formula (1). A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.

Abstract: The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.

Abstract: Provided is an apparatus for writing Bragg gratings and a reflection unit used in the same capable of readily adjusting an incident angle of light radiated from a light source, in order to write Bragg gratings on a target object such as an optical fiber. In accordance with the present invention, it is possible to readily adjust the incident angle of light introduced into the target object using the reflection unit when the position of the target object changes or an interval between the Bragg gratings is adjusted.

Abstract: An optical glass wherein an amount of change in refractive index (?n: difference in refractive index between a state before radiation and a state after radiation) caused by radiation of laser beam at wavelength of 351 nm having average output power of 0.43 W, pulse repetition rate of 5 kHz and pulse width of 400 ns for one hour is 5 ppm or below is provided. The optical glass comprises a fluorine ingredient and/or a titanium oxide ingredient and/or an arsenic oxide ingredient. The optical glass suffers little change in refractive index by radiation of strong light having wavelengths of 300 nm to 400 nm such as ultraviolet laser.

Abstract: Proximity effect correction has become a necessary step in the fabrication of integrated circuit in order to improve the pattern fidelity of current lithography processes. Current methodology is limited by data volume increase and correction inaccuracy due to extrapolation of the correction. The invention describes a methodology based on the interpolation of the correction between selected evaluation points of the target layout. By connecting the correction points this technique also provides a mean of reducing data volume and simplifying the mask writing, inspection and repair processes. The same methodology can be applied to layouts with non-printing assist features, where the correction of the assist features is based on the quality of the image of the main feature. For vector-scan mask write tool the segments interpolating the corrections can be fractured in segments with suitable angles.

Abstract: A semiconductor layout testing and correction system is disclosed. The system combines both rule-based optical proximity correction and model-based optical proximity correction in order to test and correct semiconductor layouts. In a first embodiment, a semiconductor layout is first processed by a rule-based optical proximity correction system and then subsequently processed by a model-based optical proximity correction system. In another embodiment, the system first processes a semiconductor layout with a rule-based optical proximity correction system and then selectively processes difficult features using a model-based optical proximity correction system. In yet another embodiment, the system selectively processes the various features of a semiconductor layout using a rule-based optical proximity correction system or a model-based optical proximity correction system.

Abstract: A lithography reticle advantageously includes “proximity effect halos” around tight tolerance features. During reticle formation, the tight tolerance features and associated halos can be carefully written and inspected to ensure accuracy while the other portions of the reticle can be written/inspected less stringently for efficiency. A system for creating a reticle data file from an IC layout data file can include a processing module and a graphical display. The processing module can read the IC layout data file, identify critical features and define a halo region around each of the critical features. The graphical user interface can facilitate user input and control. The system can be coupled to a remote IC layout database through a LAN or a WAN.

Abstract: A method for producing a scattered radiation grid or collimator which, for an incident radiation type, has transmissive regions and nontransmissive regions of predeterminable geometry. First the geometry of the transmissive and the nontransmissive regions of the scattered radiation grid or collimator is set. On the basis of this geometry, a base body is constructed according to the geometry, optionally differing by a particular layer thickness, of the transmissive regions or the nontransmissive regions by a rapid prototyping technique through layer-wise solidification of a structural material under the action of radiation. On the basis of this base body, the scattered radiation grid or collimator is finally completed.

Abstract: A method of crystallizing amorphous silicon using a mask having a transmitting portion including a plurality of stripes, wherein end lines of at least two stripes are not collinear; and a blocking portion enclosing the plurality of stripes includes the steps of setting the mask over a substrate having an amorphous silicon layer, applying a first laser beam to a first area of the amorphous silicon layer through the mask, thereby forming a first crystallization region, moving the substrate in a first direction, thereby disposing the blocking portion of the mask over the first crystallization region, and applying a second laser beam to the first area of the amorphous silicon layer through the mask, thereby forming a second crystallization region.

Abstract: In an X-ray detector and method for applying a stray radiation grid onto an X-ray detector having detector elements arranged in a matrix that form a detector surface having detection regions sensitive to X-rays and less sensitive intermediate regions, a basic structure for the stray radiation grid is built up over the detector surface directly on the X-ray detector with a rapid prototyping technique and is subsequently coated or filled with a material that is highly absorbent for X-radiation. An absorbent structure thus arises that lies over the less sensitive intermediate regions of the detector surface. Moiré disturbances are avoided in the X-ray image exposure and the detective quantum efficiency (DQE) is increased.

Abstract: A laser crystallizing device including a mask divided into two regions, having open parts of the same shape at complementary positions; and a light-shielding pattern selectively leaving one region of the mask open and masking the other region

Abstract: A light guiding plate is manufactured with accuracy and at low cost. This invention comprises a cylindrical roller, which has a heater built-in, rotating while fixing a stamper having a dot pattern formed on its surface, substrate fixing means for reciprocating along a lower portion of the cylindrical roller in accordance with rotation of the cylindrical roller as fixing a resin substrate, and pressing means for pressing the stamper, which is fixed to the cylindrical roller, onto a surface of the resin substrate, which is fixed to the substrate fixing means, with a constant pressure.

Abstract: Provided are a carrier for electrophotography developers prepared with generating a slight amount of byproducts such as water, alcohol, etc, which carrier is free from release of a magnetic powder, has excellent mechanical strength and durability, and good environmental stability, and further can restrain occurrence of toner spent condition and has favorable fluidity and excellent capability of imparting charging to a toner, a two-component developer comprising the carrier and a method for forming an image using the developer.

Abstract: A lithographic projection apparatus, in which movement of a substrate table in a plane is accomplished by a planar magnetic positioning device, has a mechanical limiter that limits rotation of the substrate table about a direction orthogonal to the plane.

Abstract: A material for shadow mask having the following composition of components: C≦0.0008 wt %, Si≦0.03 wt %, Mn:0.1 to 0.5 wt %, P≦0.02 wt %, S≦0.02 wt %, Al:0.01 to 0.07 wt %, N≦0.0030 wt %, B: an amount satisfying the formula: 5 ppm≦B-11/14×N≦30 ppm, balance: Fe and inevitable impurities; a method for producing the material; a shadow mask using the material (cold rolled steel sheet); and an image receiving tube equipped with the shadow mask. The material has excellent etching characteristics, which are uniform within the same coil, and excellent press formability.

Abstract: Photomask repair and fabrication with use of direct-write nanolithography, including use of scanning probe microscopic tips for deposition of ink materials including sol-gel and metallic inks. Additive methods can be combined with substractive methods. Holes can be filled with nanostructures. Height of the nanostructure filling the hole can be controlled without losing control of the lateral dimensions of the nanostructure. Chrome-on-Glass masks can be used and fabricated, as well as more advanced masks including masks for nanoimprint nanolithography.

Abstract: A mask is configured for projecting a structure pattern onto a semiconductor substrate in an exposure unit. The exposure unit has a minimum resolution limit for projecting the structure pattern onto the semiconductor substrate. The mask has a substrate, at least one raised first structure element on the substrate which has a lateral extent which is at least the minimum lateral extent that can be attained by the exposure unit, a configuration second raised structure elements which are arranged in an area surrounding the at least one first structure element on the substrate in the form of a matrix with a row spacing and a column spacing, whose shape and size are essentially identical to one another, and which have a respective lateral extent that is less than the minimum resolution limit of the exposure unit.

Abstract: A method is disclosed for forming an array of focusing elements for use in a lithography system. The method involves varying an exposure characteristic over an area to create a focusing element that varies in thickness in certain embodiments. In further embodiments, the method includes the steps of providing a first pattern via lithography in a substrate, depositing a conductive absorber material on the substrate, applying an electrical potential to at least a first portion of the conductive absorber material, leaving a second portion of the conductive material without the electrical potential, and etching the second portion of the conductive material to provide a first pattern on the substrate that is aligned with the first portion of the conductive absorber material.

Abstract: The present invention relates to a new photosensitive resin composition capable of solubility control and a pattern formation method of a double-layer structure using the same, and more particularly to a photosensitive resin composition that can control the &ggr;-value using a new photopolymerization initiator and lower layer hardener and that can control a film thickness according to the exposure energy without pattern breakup, even with low exposure energy. This photosensitive resin composition is useful for color filters and overcoating materials of LCD (liquid crystal display) manufacturing processes.

Abstract: For efficiently manufacturing half-tone phase shifting mask blanks having uniform product qualities, which enables the prevention of optical property variations when the blanks are mass-produced, there is provided a process for manufacturing half-tone phase shifting mask blanks each having a phase shifting film containing at least one half-tone film on a transparent substrate, comprising the step of providing a target containing a metal and silicon, and carrying out reactive sputtering in an atmosphere containing a reactive gas, to form said half-tone film on said transparent substrate, wherein the formation of the half-tone film by said reactive sputtering is carried out using, as said target, a target having a metal/silicon compositional ratio selected so as to give a predetermined optical property of the half-tone film, at a reactive gas flow rate selected from a region where a discharge characteristic is stabilized against a change in the flow rate of the reactive gas.

Abstract: The present invention relates to a new urethane oligomer (A) and a resin composition comprising (A) and an unsaturated group containing polycarboxylic acid resin (B) that can be diluted with water and is excellent in providing a cured product and that is suitable for a solder resist and an interlayer dielectric layer because the cured product is excellent in flexibility, soldering-heat resistance or the like and allows a development with an organic solvent or a dilute alkali solution; a photosensitive resin composition suitable for an etching resist or a cover lay; and a photosensitive film obtained thereby.

Abstract: A technique in which a boundary region is added to the outside parallel edge of phase zero (0) pattern defining polygons. This technique can reduce the need for optical proximity correction (OPC) and improve the manufacturability and patterning process window for integrated circuits. The technique can also set the width of both phase 0 and phase 180 polygons to specific sizes, making OPC easier to assign.

Abstract: Charged-particle-beam (CPB) microlithography methods are disclosed in which exposure dose on the lithographic substrate is controlled and adjusted as required to achieve proper exposure and maximal throughput, regardless of beam-transmissivity (e.g., membrane thickness) of the reticle in use. A reticle is provided with a transmitted-current-detection window exhibiting the same beam-transmissivity and forward-scattering behavior as a non-scattering membrane portion of the pattern-defining portion of the reticle. A charged-particle illumination beam is directed at the transmitted-current-detection window of the reticle. The beam current passing through the transmitted-current-detection window and reaching the wafer stage is sensed by a sensor located at or on the wafer stage. From the obtained beam-current data, a controller calculates the beam-current density on the wafer stage and calculates and sets a corresponding exposure time for exposing the wafer with an appropriate amount of exposure energy.

Abstract: A method of forming a photoresist mask on a light emitting device is disclosed. A portion of the light emitting device is coated with photoresist. A portion of the photoresist is exposed by light impinging on the interface of the light emitting device and the photoresist from inside the light emitting device. The photoresist is developed, removing either the exposed photoresist or the unexposed photoresist. In one embodiment, the photoresist mask may be used to form a phosphor coating. After the photoresist is developed to remove the exposed photoresist, a phosphor layer is deposited overlying the light emitting device. The unexposed portion of photoresist is stripped. In some embodiments, the light exposing the photoresist is produced by electrically biasing the light emitting device, or by shining light into the light emitting device through an aperture or by a focussed laser.

Abstract: In one embodiment, a spacing is determined for each edge of a number of features in a photolithographic design. The edges have at least a partially predictable layout. Based on the spacing and the predictable layout, a bridge structure is generated. Each bridge of the bridge structure connects one of the edges to an edge of a neighboring feature. Then, the features and the bridge structure are provided for a phase assignment. The phase assignment assigns features at opposite ends of each bridge in the bridge structure to opposite phases. In another embodiment, a sub-resolution assist feature (SRAF) is introduced for an edge of a feature and a bridge is generated from the feature to the SRAF. Then, the feature and the SRAF are assigned to opposite phases based on the relationship defined by the bridge.

Abstract: A method for patterning an optical property on a optical element that includes selectively applying an energy source to an optical element to pattern an optical property thereon. A method is disclosed where the optical element includes metal halide particles dispersed in the optical element. A method is also disclosed where localized heating includes pre-heating the optical element and heating a small region of the optical element with sufficient energy for metal halide particles to relax in shape. An additional method is disclosed for patterning an optical property on an optical element that includes fusing pieces of optical element containing the optical property with pieces of optical element without the optical property by heat treatment.

Abstract: A projection exposure apparatus for transferring, by projection exposure, a pattern of a first object onto a second object while scanning the first and second objects in synchronism with each other. The apparatus includes an illumination optical system having (i) a secondary light source forming device for forming a secondary light source and (ii) a slit disposed with a space from the first object and from a plane conjugate thereto. The illumination optical system is operable to illuminate the first object with light supplied from a light source of a pulse light emission type and having a slit-like irradiation region defined through the slit on a light path of the illumination optical system. The slit-like irradiation region on the first object has a light intensity distribution of a trapezoidal shape with respect to the scan direction.

Abstract: A lithographic tool system for generating an interferometric pattern of light using a plurality of exposure beams includes a processor coupled to a positioning device. The processor receives a selected period for the interferometric pattern of light, and generates an angular control signal and a translational control signal in response to the selected period. The positioning device translates an exposure beam in response to the translational control signal, and rotates the exposure beam in response to the angular control signal.

Abstract: The present invention relates to a microminiaturization technique to achieve the miniaturization and higher integration of IC chip and to the improvement of a mask used in its manufacturing process. In other words, the phases of lights transmitted through the mask is controlled within one mask pattern. Specifically, a transparent film is formed in such a manner that it covers a mask pattern along a pattern formed by magnifying or demagnifying the mask pattern or otherwise a groove is formed in a mask substrate. A phase difference of 180° is generated between the lights transmitted through the mask substrate and the transparent film or the groove, causing interference with each light to offset each other. Therefore, the pattern transferred onto a wafer has an improved resolution, being used in the invention.

Abstract: The present invention is an integrated screen comprising a screen portion having openings and an integral protector edge disposed about the periphery of the screen portion. This integrated screen protector edge can be utilized individually as the membrane support/flow field in an electrochemical cell or in conjunction with one or more subsequent screen layers. When utilized with subsequent screen layers, the integrated screen protector edge is disposed adjacent to and in intimate contact with the membrane assembly.

Abstract: A system for performing digital lithography onto a subject is provided. The system utilizes pixel panels to generate pixel patterns. Mirrors are utilized to divert and align the pixel elements forming the patterns onto a subject. A gradient lens system positioned between the panels and the subject simultaneously directs the pixel elements to the subject. The pixel elements may overlapping, adjacent, or spaced as desired. The pixel elements may be directed to multiple surfaces simultaneously. One or more point array units may be utilized in the system to achieve higher resolution.

Abstract: A shadow mask for a cathode ray tube includes through-holes defined by first and second recessed formed at first and second surfaces of the shadow mask, respectively. Each through-hole has a first wall farther away from a center of the shadow mask than a second wall thereof. The second recess has a smaller size than that of the first recess. The first wall is formed of a first wall portion defined by an inner surface of the first recess and a second wall portion defined by an inner surface of the second recess. The second wall portion of through-holes located at a peripheral region of the first region has a configuration such that electron beams reflected therefrom are directed to an inner surface of the first recess to thereby reduce electron beams reflected therefrom in directions different from a direction in which the electron beams are originally directed before the electron beams enter the shadow mask.

Abstract: A substrate provided with an alignment mark in a substantially transmissive process layer overlying the substrate, said mark comprising high reflectance areas for reflecting radiation of an alignment beam of radiation, and low reflectance areas for reflecting less radiation of the alignment beam, wherein the low reflectance areas comprise scattering structures for scattering and absorbing radiation of the alignment beam.

Abstract: An apparatus and system for fabricating a wafer utilizing a dual damascene process. A photolithographic device having transparent portions and radiant energy inhibiting portions is used to process a wafer-in-process having a first dielectric layer, a hard mask over the first dielectric layer, vias in a second dielectric layer which overlies the hard mask, and a photoresist material within the vias. The photolithographic device is registered to the wafer-in-process to prevent radiant energy from being directly transmitted into the photoresist material overlaying the vias. This prevents the exposure of a portion of the photoresist material at a lower portion of the vias, thus protecting the hard mask layer and/or the conductive plugs from damage during a subsequent etching process. The exposed photoresist material is then removed.

Abstract: Process for determining a mask for changing a brightness profile of a photographic copy with the following steps: photographic image data are derived from photographically recorded image information; optimized image data are obtained by correction of the photographic image data, wherein errors which were created to during the photographic recording of the image information are considered; a brightness mask, the values of which embody an influencing of the brightness profile of the photographic copy is determined based on the optimized image data.

Abstract: Methods are provided for performing axial alignment of the optical system in a charged-particle-beam (e.g., electron-beam) microlithographic exposure apparatus employing an illumination beam and a scattering-type reticle. The microlithographic exposure apparatus projects and forms an image of a patterned beam that has passed through a reticle onto a substrate (e.g., semiconductor wafer). The reticle can be a scattering-stencil mask in which feature-defining cutouts are formed in a membrane that transmits an illumination beam while scattering the beam. A contrast aperture is disposed at the beam-convergence plane of the projection lens, i.e., at the Fourier plane of the reticle surface. Axial alignment is performed using an adjustment reticle having a “white subfield” (in a scattering-stencil reticle, a cutout area covering the entire subfield) and a “black subfield” (in a scattering-stencil reticle, a subfield consisting entirely of a reticle membrane lacking any cutouts).

Abstract: An aperture body has a light transmissive region defined therein which includes first, second, third and fourth curved segments. During an exposure process, each curved segment of the light transmissive region contributes to an improved resolution and optimum depth of focus (DOF).

Abstract: A projection lithography system provides a cross-quadrupole illumination pattern in combination with a translucent substrate having boundary relief features. The features are spaced close together so that they are not imaged in a focal plane, but generate a dark image of the space between the features in the focal plane.

Abstract: A multilevel diffractive optical element comprising a base and a plurality of phase zones having phase levels of a substantially identical height h, each phase zone being defined by a local modulation depth d and a local number of phase levels &xgr;=d/h, the local number of phase levels &xgr; per phase zone being a real number, an integer of which defines the number of complete levels in the phase zone, which complete levels have identical widths, and a fraction of which, in at least one phase zone, defines an incomplete level which is narrower than the complete levels, said local number of phase levels &xgr;=&xgr;(x, y) varying among different phase zones so as to provide corresponding variation of said local modulation depth d=d(x, y) whereby local diffraction efficiencies and consequently an overall diffraction efficiency of the optical element is arbitrarily controlled.

Abstract: There is provided a patterning method which makes it possible to form a desired preferable pattern having no reduction in the pattern thickness in a boundary portion where a group of patterns are joined using a plurality of exposure masks. There is provided a patterning method for forming a group of patterns in which first patterns to serve as basic units are repetitively arranged using a plurality of exposure masks. When a third region sandwiched by a first region exposed with a first exposure mask and a second region exposed with a second exposure mask is exposed with the first and second exposure masks in a complementary manner, repetitive unit patterns for exposing the third region are different from the first patterns.

Abstract: A projection exposure apparatus detects positions at the measurement points (P1-P5) in the Z-direction on the shot area of the wafer W, and obtains the distribution of the irregularity of the shot area based on the detected result and the pre-known process structure data. For example, when the pattern leaving the narrowest line width is exposed in the pattern area (40B), the pattern area (40B) is made as a focusing reference plane and the difference in level (ZA−ZB) of another area of which reference is pattern area (40B) is added to the level of the best image plane (42) as an offset value. The pattern area (40B) is focused to the best image plane (42) by fitting image plane (42A) to the exposure surface.

Abstract: A projection exposure apparatus for transferring, by projection exposure, a pattern of a first object onto a second object while scanning the first and second objects in synchronism with each other, includes an illumination optical system having a secondary light source forming system for forming a secondary light source and a slit disposed with a space from the first object or a plane conjugate thereto, the illumination optical system being operable to illuminate the first object with light supplied from a light source of a pulse light emission type aid having a slit-like irradiation region defined through the slit on a light path of the illumination optical system, a projection optical system for projecting the pattern of the first object onto the second object, and a control system for controlling an exposure parameter so that an integrated exposure intensity upon the first object and in the scan direction in accordance with a change in size of the secondary light source.

Abstract: An efficient method for the microfabrication of electronic devices which have been adapted for the analyses of biologically significant analyte species is described. The techniques of the present invention allow for close control over the dimensional features of the various components and layers established on a suitable substrate. Such control extends to those parts of the devices which incorporate the biological components which enable these devices to function as biological sensors. The materials and methods disclosed herein thus provide an effective means for the mass production of uniform wholly microfabricated biosensors. Various embodiments of the devices themselves are described herein which are especially suited for real time analyses of biological samples in a clinical setting. In particular, the present invention describes assays which can be performed using certain ligand/ligand receptor-based biosensor embodiments.

Abstract: Method for the preparation of holographic diffusers where the holographic diffuser is designed through iterative calculations according to the Fraunhofer theory of diffraction and some constrain conditions. In the iterative calculation some constrain conditions that can change the magnitude of the light passing through the diffuser are used to design the diffuser. A novel iterative calculation is disclosed such that uniformed mixing of colors and high light utilization efficiency of the diffuser may be provided.

Abstract: A method and apparatus according to the present invention achieves improved lithographic printing of semiconductor wafers. An optimum tilt for projection optics in a lithography tool relative to a wafer in a direction perpendicular to a scanning direction is characterized for each of a plurality of wafer technologies and levels. The corresponding optimum tilt is retrieved from a database to adjust the lithography tool accordingly, depending upon what technology and level is being processed.