Abstract: An apparatus (e.g., a multi-spectral optical filter array, an optical wafer, an optical component) has an aperture mask printed directly thereon, the aperture mask including a positive or negative photoresist. The apparatus includes a substrate having the aperture mask printed on at least one of a light entrance surface or a light exit surface of the substrate so as to provide an aperture over a portion of the substrate. The photoresist from which the aperture mask is formed is photo-definable or non-photo-definable, and is deposited/printed to form the aperture mask on the substrate.

Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.

Abstract: A photomask includes a transparent substrate and a shielding pattern disposed on the transparent substrate. The shielding pattern includes shielding island structures. The shielding island structures are separated from and spaced apart from one another by dividing lanes. The dividing lanes expose the underlying transparent substrate. The photomask is configured for a light of a wavelength, and the dividing lanes reduce or hinder a transmission of the light of the wavelength.

Abstract: A semiconductor structure, comprising a substrate and an interconnect layer disposed over a substrate and extending across a memory region and a logic region. The interconnect layer comprises a plurality of tower structures disposed in the interconnect layer within the memory region. Each tower structure comprises at least one metal interconnect structure and a magnetic tunnel junction (MTJ) structure stacked on the metal interconnect structure. The plurality of tower structures are arranged on the substrate in a XY staggered pattern. The at least one metal interconnect structure and the magnetic tunnel junction (MTJ) structure in each tower structure are substantially symmetric along a stacking direction.

Abstract: The substrate with a multilayer reflective film includes a substrate and the multilayer reflective film configured to reflect exposure light, the multilayer reflective film comprising a stack of alternating layers on a substrate, the alternating layers including a low refractive index layer and a high refractive index layer, in which the multilayer reflective film contains molybdenum (Mo) and at least one additive element selected from nitrogen (N), boron (B), carbon (C), zirconium (Zr), oxygen (O), hydrogen (H) and deuterium (D), and the crystallite size of the multilayer reflective film calculated from a diffraction peak of Mo (110) by X-ray diffraction is 2.5 nm or less.

Abstract: For the purposes of measuring structures of a microlithographic mask, a method for capturing absolute positions of structures on the mask and a method for determining structure-dependent and/or illumination-dependent contributions to the position of an image of the structures to be imaged, or of the edges defining this structure, are combined with one another. As a result of this, establishing an edge placement error that is relevant to the exposure of a wafer and, hence, a characterization of the mask can be substantially improved.

Abstract: Methods, systems, and apparatuses are disclosed for radiation treatment of tumors based at least in part on patient-specific imaging information. The methods, systems and apparatuses include computer programs encoded on computer-readable media. The methods include acquiring imaging information relating to a target to be treated. The imaging information is non-anatomic imaging information relating to the target acquired from at least one imaging marker that reflects at least one of the metabolic, physiological and histological features of the target. The methods further include computing a radiation dose based at least on the imaging information.

Abstract: A method of manufacturing an extreme ultraviolet (EUV) lithography mask includes forming an image pattern in an absorption layer of EUV mask blank. The EUV mask blank includes: a multilayer stack including alternating molybdenum (Mo) and silicon (Si) layers disposed over a first surface of a mask substrate, a capping layer disposed over the multilayer stack, and an absorption layer disposed over the capping layer. A border region surrounds the image pattern having a trench wherein the absorption layer, the capping layer and at least a portion of the multilayer stack are etched. Concave sidewalls are formed in the border region or an inter-diffused portion is formed in the multilayer stack of the trench.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate having a first side and a second side; a backside coating layer comprising an alloy of tantalum and nickel on the first side of the substrate; a multilayer stack of reflective layers on the second side of the substrate, the multilayer stack of reflective layers including a plurality of reflective layers including reflective layer pairs; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer.

Abstract: An exposure mask includes a substrate, and a plurality of first films and a plurality of second films located alternately over each other over selected portions of the substrate. The exposure mask further includes a third film selectively located over the first and second films. At least one first pattern is located over the substrate and does not include any of the first, second or third films. At least one second pattern is located over the substrate and includes the first and second films and does not include the third film. At least one third pattern is located over the substrate and includes the first, second and third films.

Abstract: A three-dimensional object includes an outer-layer member and an inner structural member. The outer-layer member is a layer to constitute the surface of the three-dimensional object, and includes an inner space. The outer-layer member is made up of a plurality of divided outer-layer pieces formed of build material, which is functional ink ejected from a droplet ejection head and cured. The inner structural member is disposed in the inner space of the outer-layer member and configured to support the outer-layer member.

Abstract: A substrate processing apparatus includes a development processor and a reversal film former, and processes a substrate having one surface on which a resist film made of a photosensitive material is formed. The development processor forms a resist pattern on the one surface of the substrate by performing development processing on a resist film using a development liquid. A reversal film former forms a reversal film having etch resistance higher than that of the resist film on the one surface of the substrate to cover the resist pattern while regulating a temperature of the substrate in a certain range after the development processing is performed by the development processor.

Abstract: A reflective mask includes a substrate, a light absorbing layer over the substrate, a reflective layer over the light absorbing layer, and an absorption pattern over the reflective layer. The reflective layer covers a first portion of the light absorbing layer, and a second portion of the light absorbing layer is free from coverage by the reflective layer.

Abstract: The present invention is to provide a pellicle frame in a frame shape, having an upper end face to arrange a pellicle film thereon and a lower end face to face a photomask, and which is characterized by being provided with a notched part from an outer side face toward an inner side face of the upper end face, and to provide a pellicle characterized by including the pellicle frame as a component.

Abstract: A pellicle having a metal oxysilicide layer. A pellicle having a molybdenum layer, a ruthenium layer and a silicon oxynitride layer, wherein the molybdenum layer is disposed between the ruthenium layer and the silicon oxynitride layer. A method of manufacturing a pellicle for a lithographic apparatus, the method including providing a metal oxysilicide layer. A lithographic assembly including a pellicle having a metal oxysilicide layer. The use of a pellicle having a metal oxysilicide layer in a lithographic apparatus.

Abstract: The present invention is to provide a pellicle characterized by including a pellicle film and a pellicle frame, in which the pellicle film is stretched on the pellicle frame, and the pellicle film is an annealed pellicle film, and to provide a method for producing a pellicle by stretching a pellicle film on a pellicle frame, including the step of annealing the pellicle film alone before stretching the pellicle film on the pellicle frame, annealing the pellicle after stretching the pellicle film on the pellicle frame, or annealing the pellicle film alone and the pellicle both before and after stretching the pellicle film on the pellicle frame.

Abstract: Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets. A process for improving reflectivity from a multilayer stack is also disclosed.

Abstract: A pellicle and a method for manufacturing a pellicle that can improve the production yield ratio are provided. A method for manufacturing a pellicle comprises a step to prepare a supporting member containing Si, and a step to form a pellicle film on a top surface of the supporting member. The step to form the pellicle film includes: a step to form a SiC film with a first average carbon concentration on the top surface of the supporting member by carbonizing Si, and a step to form a SiC film with a second average carbon concentration different from the first average carbon concentration on the top surface of the SiC film. The method for manufacturing a pellicle further comprises a step to exposes at least a part of the reverse side of the SiC film by wet etching.

Abstract: A mask blank, which is capable of being formed with high transfer accuracy when a hard mask film pattern is used as a mask, and even when the mask blank includes a chromium-based light shielding film. A light-semitransmissive film, a light shielding film, and a hard mask film are laminated in the stated order on a transparent substrate. The light-semitransmissive film contains silicon, and the hard mask film contains any one or both of silicon and tantalum. The light shielding film has a laminate structure of a lower layer and an upper layer, and contains chromium. The upper layer has a content of chromium of 65 at % or more, and a content of oxygen of less than 20 at %, and the lower layer has a content of chromium of less than 60 at %, and a content of oxygen of 20 at % or more.

Abstract: A pellicle assembly is disclosed that has a pellicle frame defining a surface onto which a pellicle is to be attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. There is also disclosed a pellicle assembly for a patterning device, the pellicle assembly including one or more actuators for moving the pellicle assembly towards and way from the patterning device.

Abstract: A method of manufacturing a semiconductor structure includes providing a mask including a first substrate; a first mask layer disposed over the first substrate, including a plurality of first recesses extended through the first mask layer; a second mask layer disposed over the first mask layer and including a plurality of second recesses extended through the second mask layer; providing a second substrate including a photoresist disposed over the second substrate; and projecting a predetermined electromagnetic radiation through the mask towards the photoresist, wherein the first mask layer is at least partially transparent to the predetermined electromagnetic radiation, the second mask layer is opaque to the predetermined electromagnetic radiation, and at least a portion of the second mask layer is disposed between two of the plurality of second recesses.

Abstract: A mask plate, a method for manufacturing a patterned film layer and a manufacturing method of a thin film transistor are provided by the embodiments of the present disclosure. The mask plate includes: a first pattern and a second pattern; the first pattern includes a first sidewall, a second sidewall, a connecting portion connecting the first sidewall and the second sidewall, and an extension portion on a side of the connecting portion away from the first sidewall; the second pattern is between the first sidewall and the second sidewall; a slit is between the first pattern and the second pattern, and the slit is configured for diffraction. The positive photoresist is used, the extension portion of the mask plate makes that the pattern of the photoresist formed by the mask plate with the extension portion has a region corresponding to the extension portion and the “bolt effect” is avoided.

Abstract: An extreme ultra-violet (EUV) mask and method for fabricating the same is disclosed. For example, the EUV mask includes a substrate, a multi-layered mirror layer formed on the substrate, a metal capping layer formed on the multi-layered mirror layer, and a multi-layered absorber layer formed on the metal capping layer. The multi-layered absorber layer includes features etched into the multi-layered absorber layer to define structures on a semiconductor device.

Abstract: The present disclosure describes a method of patterning a semiconductor wafer using extreme ultraviolet lithography (EUVL). The method includes receiving an EUVL mask that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further includes patterning the absorber layer to form a trench on the EUVL mask, wherein the trench has a first width above a target width. The method further includes treating the EUVL mask with oxygen plasma to reduce the trench to a second width, wherein the second width is below the target width. The method may also include treating the EUVL mask with nitrogen plasma to protect the capping layer, wherein the treating of the EUVL mask with the nitrogen plasma expands the trench to a third width at the target width.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer including an alloy of tantalum and copper on the capping layer.

Abstract: A mask plate and a manufacturing method thereof, a flexible substrate stripping apparatus and a flexible substrate stripping method are provided. The mask plate includes a laser-transmitting substrate and a patterned laser-shielding layer located on the laser transmitting substrate.

Abstract: A masking process and a mask set. The masking process includes: aligning a first mask with a stage carrying a substrate to be patterned; forming a first layer structure and a first overlay correction pattern on the substrate to be patterned by using the first mask; correcting with an image sensor and the first overlay correction pattern; aligning a second mask with the stage; forming a second layer structure and a second overlay correction pattern on the substrate to be patterned by using the second mask; and correcting with the image sensor and the second overlay correction pattern.

Abstract: A support frame for pellicle is provided including a first support frame part, a second support frame part, and a filter, wherein the filter has a flat plate-shaped frame shape and is sandwiched by the first support frame part and the second support frame part, the first support frame part includes a first body part having a flat plate-shaped frame shape and a first engaging portion protruded from the first body part to a thickness direction of the support frame for pellicle, and the second support frame part includes a second body part having a flat plate-shaped frame shape and a second engaging portion of the second body part engaging with the first engaging portion being arranged in a concave part provided in the thickness direction of the support frame for pellicle.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.

Abstract: A method of fabricating a semiconductor device includes: (i) placing, on a first layout, first patterns that extend parallel to each other in a first direction and are spaced apart from each other in a second direction intersecting the first direction, (ii) extracting a low-density region on the first layout, (iii) defining an enclosure region that surrounds the first patterns, (iv) placing dot patterns on a second layout, (v) extracting, from the dot patterns, first dot patterns that overlap the low-density region and do not overlap the enclosure region, (vi) placing the extracted first dot patterns on the first layout, (vii) allowing the first dot patterns to extend in the first direction to form second patterns, and (viii) using the first and second patterns to respectively form first and second active patterns on a substrate.

Abstract: The present invention is to provide a pellicle frame characterized by including a metal or alloy having a linear expansion coefficient of 10×10?6 (1/K) or less and further a density of 4.6 g/cm3 or less, and a pellicle characterized by including the pellicle frame as an element.

Abstract: A reflective optical element (1) for reflecting light having at least one wavelength in an EUV wavelength range has an optically effective region configured for reflecting the light incident on a surface (2) of the optically effective region. The reflective optical element (1) has an edge (4) forming at least part of a boundary of an edge-free surface (3) of the reflective optical element (1), wherein the edge-free surface (3) includes the surface (2) of the optically effective region. The edge (4) has a chamfer and/or a rounding. Also disclosed is a method for adapting a geometry of at least one surface region of a component of an optical arrangement, for example of a reflective optical element (1).

Abstract: Monolithic framed pellicle membrane integrating a structural framing member with a membrane spanning the framing member. The monolithic frame pellicle membrane is suitable as an overlay of a reticle employed in lithography operations of integrated circuit manufacture. A semiconductor-on-insulator (SOI) wafer may be machined from the backside, for example with a bonnet polisher, to form a pellicle framing member by removing a portion of a base semiconductor substrate of the SOI wafer selectively to top semiconductor layer of the SOI wafer, which is retained as a pellicle membrane. In some exemplary embodiments suitable for extreme ultraviolet (EUV) lithography applications, at least the top semiconductor layer of the SOI wafer is a substantially monocrystalline silicon layer.

Abstract: The present disclosure provides a method of manufacturing a phase-shifting photomask, which includes following steps. A mask pattern provides on a transparent substrate and includes a first layer photomask pattern including a phase-shifting layer and a light shielding layer sequentially stacked on the transparent substrate and a second layer photomask pattern stacked on the transparent substrate in sequence. A thermal oxidation process is performed on the second layer photomask pattern to form a thermal oxide layer and a hard-shielding layer pattern exposed a portion of a top surface of the light shielding layer, and the thermal oxide layer covers the hard-shielding layer pattern and the portion of the top surface of the light shielding layer. The thermal oxide layer is removed. A portion of the light shielding layer is removed by using the hard-shielding layer pattern as a mask to form a patterned light shielding layer exposed the phase-shifting layer.

Abstract: The present invention relates to a transparent sealing member and an optical component. This transparent sealing member (10) is used in a package (20) for accommodating at least one optical element (14), and is bonded to a mounting substrate (16) having the optical element (14) mounted thereto, by a resin adhesive (50). The transparent sealing member (10) is provided with a plurality of particles (32) which are affixed to a surface (30a) to be bonded to the mounting substrate (16).

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from amorphous tantalum nitride formed by non-reactive sputtering.

Abstract: Techniques and systems for improving wafer contrast by manipulating reflective extreme ultraviolet (EUV) mask absorber are described. Some embodiment disclosed herein provide for EUV absorber material, which transmits some EUV illumination, to suppress the printing of sub-resolution assist features (SRAFs) while making the SRAFs closer in size to the printed feature by thinning the SRAF absorber thickness from the nominal mask absorber thickness in the bright-field mask case. In the dark-field mask case, a layer of absorber material is left in the SRAF trenches to prevent SRAF printing.

Abstract: A photomask blank and a photomask having favorable wafer transfer characteristics and irradiation resistance. A photomask blank is for fabricating a photomask for an exposure wavelength of 193 nm, the photomask blank comprising: a light-transmissive substrate; a phase shift film formed on the light-transmissive substrate and providing phase shift effects of a light transmittance of at least 30% with respect to exposure light; and a light-shielding film formed on the phase shift film. The phase shift film is constituted by lamination of: a first phase shift film (that uses a silicon nitride-based material, has a refractive index n1 of 2.5 to 2.7, and an extinction coefficient k1 of 0.2 to 0.4; and a second phase shift film that uses a silicon oxynitride-based material, has a refractive index n2 of 1.55 to 2.20, and an extinction coefficient k2 greater than 0 but no greater than 0.1.

Abstract: The present invention provides a reflective mask blank and reflective mask capable of reducing the shadowing effect of EUV lithography and forming a fine pattern. As a result, a semiconductor device can be more stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film, an absorber film and an etching mask film on a substrate in that order, wherein the absorber film is made of a material containing nickel (Ni), and the etching mask film is made of a material containing chromium (Cr) or a material containing silicon (Si).

Abstract: An optical proximity correction method includes extracting edges of a layout of a pattern on a mask, including at least one edge of the layout that is a curvilinear edge, and generating an optical image of the pattern by applying an edge filter, which includes an any-angle filter corresponding to an angle of the curvilinear edge, to the extracted edges of the layout. The any-angle filter may be generated using source sector rotation to correspond to the angle of the curvilinear edge.

Abstract: Embodiments described herein relate to methods forming optical device structures. One embodiment of the method includes exposing a substrate to ions at an ion angle relative to a surface normal of a surface of the substrate to form an initial depth of a plurality of depths. A patterned mask is disposed over the substrate and includes two or more projections defining exposed portions of the substrate or a device layer disposed on the substrate. Each projection has a trailing edge at a bottom surface contacting the device layer, a leading edge at a top surface of each projection, and a height from the top surface to the device layer. Exposing the substrate to ions at the ion angle is repeated to form at least one subsequent depth of the plurality of depths.

Abstract: A light-emitting display device includes a pixel defining layer with an opening that exposes a first electrode, a hole injection layer on the first electrode, a lyophilic pattern on the hole injection layer in the opening, a hole transport layer on the lyophilic pattern, a light-emitting layer on the hole transport layer, and a second electrode on the light-emitting layer. The lyophilic pattern includes a first part adjacent to a first sidewall of the opening and a second part adjacent to a second sidewall of the opening. A distance from a top surface of the hole injection layer to an edge of a top surface of the second part corresponds to a first height. A distance from the top surface of the hole injection layer to a top surface of the first part corresponds to a second height. The first height is lower than the second height.

Abstract: A method for protecting a photomask comprises: (i) providing the photomask, (ii) providing a border, (iii) depositing at least two electrical contacts on the border, (iv) mounting a film comprising carbon nanotubes on the border such that the film comprises a free-standing part, wherein after the mounting and depositing steps, the electrical contacts are in contact with the film, (v) inducing a current through the free-standing part of the film by biasing at least one pair of the electrical contacts, and (vi) mounting the border on at least one side of the photomask with the free-standing part of the film above the photomask.

Abstract: A method of manufacturing a phase shift mask includes forming a doped silicon nitride layer on a mask substrate and forming an opaque layer on the doped silicon nitride layer. The opaque layer and doped silicon nitride layer are then patterned to expose portions of the mask substrate to form a plurality of mask features comprising the opaque layer disposed on the doped silicon nitride layer. Portions of the opaque layer are then removed from some of the mask features.

Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2?) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.

Abstract: The invention relates to a method used in a photolithographic process comprising depositing a film of Atomic Layered Deposition (ALD) Al2O3 on a photomask, subjecting said film of Al2O3 on the photomask to a plasma treatment and then irradiating the deposited film of ALD Al2O3 on the coated photomask at a wavelength of 193 nm.

Abstract: Provided is a photomask blank including, on a substrate, a processing film and a film made of a material containing chromium which is formed to be in contact with the processing film and has a three-layer structure of first, second and third layers, each of which contains chromium, oxygen, and nitrogen, wherein the first layer has a chromium content of 40 atomic % or less, an oxygen content of 50 atomic % or more, a nitrogen content of 10 atomic % or less, and a thickness of 20 nm or more, the second layer has a chromium content of 50 atomic % or more, an oxygen content of 20 atomic % or less, and a nitrogen content of 30 atomic % or more, and the third layer has a chromium content of 40 atomic % or less, an oxygen content of 50 atomic % or more, and a nitrogen content of 10 atomic % or less.

Abstract: Photomasks and methods of fabricating the photomasks are provided herein. In some examples, a layout for forming an integrated circuit device is received. The layout includes a set of printing features. A region of the layout is identified. The region is at a distance from the set of printing features such that an exposure region associated with a feature in the region does not affect a set of exposure regions associated with the set of printing features. A plurality of non-printing features is inserted into the region. A photomask is fabricated based on the layout.

Abstract: A mask layout containing a non-Manhattan pattern is received. The received mask layout is processed. An edge of the non-Manhattan pattern is identified. A plurality of two-dimensional kernels is generated based on processed pre-selected mask layout samples. The two-dimensional kernels each have a respective rotational symmetry. The two-dimensional kernels are applied to the edge of the non-Manhattan pattern to obtain a correction field for the non-Manhattan pattern. A thin mask model is applied to the non-Manhattan pattern. The thin mask model contains a binary modeling of the non-Manhattan pattern. A near field of the non-Manhattan pattern is determined by applying the correction field to the non-Manhattan pattern having the thin mask model applied thereon. An optical model is applied to the near field to obtain an aerial image on a wafer. A resist model is applied to the aerial image to obtain a final resist image on the wafer.