Abstract: An electrophotographic photosensitive member which comprises a layer containing a compound represented by the formula (1) shown below: ##STR1## wherein A represents 1,2-, 2,3- or 3,4-benzocarbazolyl group; R.sub.1, R.sub.2 and R.sub.3, which may be the same or different, each represent hydrogen atom, alkyl group, aralkyl group, aryl group or heterocyclic group, with proviso that R.sub.2 and R.sub.3 cannot be hydrogen atoms at the same time.

Abstract: A light receiving member has a support and a light receiving layer. The support has an uneven-shaped surface of a plurality of spherical dimples formed by the impact of a plurality of rigid true spheres on the surface of the support. Each of the dimples has an identical radius of curvature R and an identical width D, wherein the radio D/R of the width D to the radius of curvature R is from 0.03 to 0.07. The light receiving layer is a multi-layered structure having a free surface which formed from an amorphous material containing silicon atoms as the main constituent, at least one of oxygen atoms, carbon atoms and nitrogen atoms, and at least one of hydrogen atoms and halogen atoms. The light receiving layer contains a layer region which functions as a photosensitive layer.The light receiving member, when used with a coherent laser beam as an optical source, acts to prevent the occurrence of an interference fringe pattern during image formation.

Abstract: There is provided a light receiving member which comprises a support, a photosensitive layer composed of amorphous material containing silicon atoms and at least either germanium atoms or tin atoms and a surface layer, said surface layer being of multi-layered structure having at least an abrasion-resistant layer at the outermost side and a reflection preventive layer in the inside, and said support having a surface provided with irregularities composed of spherical dimples each of which having an inside face provided with minute irregularities. The light receiving member overcomes all of the problems in the conventional light receiving member comprising a light receiving layer composed of an amorphous silicon and, in particular, effectively prevents the occurrence of interference fringe in the formed images due to the interference phenomenon thereby forming visible images of excellent quality even in the case of using coherent laser beams possible producing interference as a light source.

Abstract: A light receiving member comprises a support and a light receiving layer having a photosensitive layer composed of a-Si(Ge,Sn)(H,X) or a-Si(Ge,Sn)(O,C,N)(H,X) and a surface layer composed of A-Si(O,C,N)(H,X), said support having a surface provided with irregularities composed of spherical dimples, each of which has an inside face provided with minute irregularities. The optical band gap possessed by the surface layer and the optical band gap possessed by the photosensitive layer on which the surface layer is disposed are matched at their interface. The light receiving member can effectively prevent the occurrence of interference fringes in the formed images. In addition, the light-receiving member forms visible images of excellent quality even when coherent laser beams are used as the light source. The member also effectively prevents reflection of incident light at the interface between the surface layer and the photosensitive layer.

Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity and containing an amorphous material comprising silicon atom as a matrix, said amorphous layer having a first layer region containing oxygen atoms and a second layer region containing Group III atoms of the Periodic Table Such that said Group III atoms are continuously distributed in the direction of the layer thickness and enriched at the support side and wherein oxygen is absent from said amorphous layer exclusive of the first layer region, said first layer region being present internally in the support side portion of the amorphous layer, and there being the following relationship:To/T.ltoreq.1where To is the layer thickness of the first layer region and T results from subtracting To from the layer thickness of the amorphous layer.

Abstract: An electrophotographic photoreceptor comprising a photosensitive layer comprisingat least one compound selected from the group consisting of hydrogenated amorphous silicon, fluorinated amorphous silicon,a surface modifying layer formed on the upper surface of said photosensitive layer comprising at least one compound selected from the group consisting of hydrogenated amorphous silicon carbide, fluorinated amorphous silicon carbide, hydrogenated and fluorinated amorphous silicon carbide, hydrogenated amorphous silicon nitride, fluorinated amorphous silicon nitride, and hydrogenated and fluorinated silicon nitride,a charge transport layer formed on the lower surface of said photosensitive layer comprising at least one compound selected from the group consisting of hydrogenated amorphous silicon carbide, fluorinated amorphous silicon carbide, and hydrogenated and fluorinated amorphous silicon carbide, the carbon content of said charge transport layer is within the range of 5 to 30 atomic % and said charge transp

Abstract: There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a charge injection inhibition layer formed of a polycrystal material containing silicon atoms as the main constituent atoms and an element for controlling the conductivity which functions to prevent a charge from being injected from the side of the substrate, a photoconductive layer formed of an amorphous material containing silicon atoms as the main constituent atoms and a surface layer formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, the amount of the hydrogen atoms contained in the surface layer being in the range from 41 to 70 atomic %. The light receiving layer may have a contact layer and/or an absorption layer of light having a long wavelength.

Abstract: The photoconductive layer (3) has a triple-layer structure comprised of an upper layer (33) made of amorphous silicon containing germanium and carbon, a middle layer (32) made of amorphous silicon containing germanium, and a lower layer (31) made of amorphous silicon. The upper layer (33) formed between a surface layer (4) and the middle layer (32), and the lower layer (31) formed between the middle layer (32) and a barrier layer (2) serve to reduce the energy difference and the interfacial state between respective layers thus, high electrophotographic sensitivity for a longer wavelength light can be obtained, and sensitivity in the oscillation wavelength of a GaAlAs diode laser improves effectively.

Abstract: Surface features of a semiconductor structure above a predetermined level are exposed for selective treatment (e.g., etching) by forming a layer of a solvent-expanded polymer on the surface of the structure, and allowing the layer to dry and cure, thereby relaxing to the predetermined level, at which it protects the underlying structure during treatment. Subsequently, the protective layer is removed by rinsing in a solvent.

Abstract: There is provided a light receiving member comprising a first layer and a second layer being laminated on a substrate, said first layer comprising (a) a layer of less than 100 .ANG. in thickness and (b) another layer of less than 100 .ANG. in thickness being laminated one upon the other, said layer (a) being formed of an amorphous material containing silicon atoms as the main constituent atoms and an element for controlling the conductivity and said layer (b) being formed of an amorphous material containing silicon atoms as the main constituent atoms and at least one kind element selected from the group consisting of nitrogen atoms, carbon atoms and oxygen atoms, and said second layer being formed of an amorphous material containing silicon atoms as the main constituent atoms.

Abstract: There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a contact layer formed of a polycrystal material containing silicon atoms as the main constituent atoms and at least one kind selected from nitrogen atoms, oxygen atoms and carbon atoms, a photoconductive layer formed of an amorphous material containing silicon atoms as the main constituent atoms and a surface layer formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, the amount of the hydrogen atoms contained in the surface layer being in the range from 1.times.10.sup.-3 to 40 atomic %. The light receiving layer may have a charge injection inhibition layer or/and an absorption layer of light having a long wavelength.

Abstract: The present invention uses a developing agent with a Vickers hardness of 3 or more for image forming steps. Therefore, the image forming method according to the present invention can prevent a developing agent from adhering to the surface of an image carrier in a short period of time by the repetition of image forming steps.

Abstract: A photosensitive material comprising a photosensitive layer composed of an amorphous silicon-based material formed on an electrically conductive support, and a surface layer formed on said photosensitive layer, the surface layer being composed of amorphous carbon containing hydrogen and fluorine has improved printing durability and humidity resistance.

Abstract: An electrophotographic photosensitive member comprises a conductive substrate, a blocking layer formed on the conductive substrate, a photoconductive layer, formed on the blocking layer and a surface layer formed on the photoconductive layer. The blocking layer is formed from a microcrystalline silicon, which is made a p-type by being heavily doped with an element of Group III of the Periodic Table. The photoconductive layer is formed from an amorphous silicon which is lightly doped with an impurity element, and which is similar in properties to an intrinsic semiconductor. Rectifying contact is formed between the photoconductive layer and the blocking layer so that a depletion layer is formed by that interface toward the interior of the photoconductive layer. By so doing, it is possible to obtain a photosensitive member having a high sensitivity in the range from visible light to near-infrared light.

Abstract: A photoconductive composition and an electrophotographic light-sensitive material using the photoconductive composition are described. The photoconductive composition comprises a photoconductive substance and a water-insoluble linear polyester copolymer wherein the polyester copolymer contains a constituent repeating unit derived from terephthalic acid and a straight .alpha.,.omega.-diol component, and the diol component contains at least three compounds selected from the group of ethylene glycol, diethylene glycol, triethylene glycol, 1,3-propanediol, 1,4-butanediol, 1,5-pentanediol, and 1,6-hexanediol. The electrophotographic light-sensitive material comprises a support and a layer of the above photoconductive composition on the support.

Abstract: A light receiving member comprises a support and a light receiving layer of a multi-layered structure having at least a photosensitive layer composed of an amorphous silicon, said support having a surface provided with irregularities composed of spherical dimples each of which having an inside face provided with minute irregularities. The light receiving layer may contain a surface layer comprising an outer abrasion-resistant layer and an inner reflection prevention layer, wherein the optical band gap possessed by the surface layer and optical band gap possessed by the photosensitive layer on which the surface layer is disposed are matched at their interface. The light receiving member can effectively prevent the occurrence of interference fringes in the formed images, forming visible images of excellent quality even when coherent laser beams are used as the light source.

Abstract: Disclosed is a photoresponsive imaging member comprised of certain hydrogenated, or halogenated amorphous boron.

Abstract: A photosensor having a substrate, a photoconductive layer formed on the substrate and containing amorphous silicon, a pair of electrodes electrically connected to the photoconductive layer and a light receiving section having a predetermined area for applying light to the photoconductive layer, wherein the photoconductive layer is formed by producing a precursor (SiX) including at least silicon atoms and halogen atoms and an active seed (H) including hydrogen atoms, at the region outside of a layer forming spatial region where the photoconductive layer is formed, and by introducing the precursor and the active seed into the layer forming spatial region to deposit amorphous silicon on the surface of the substrate.

Abstract: The invention disclosed relates to a photosensitive member with an amorphous silicon photoconductive layer. On the photoconductive layer, an insulating layer including amorphous silicon, carbon and oxygen is formed. The amount of carbon is 5 to 65 atomic % and less than 10 atomic % for oxygen if both carbon and oxygen are included uniformly throughout the layer. An amorphous silicon barrier layer containing either oxygen and boron or oxygen and carbon may be formed between the substrate and the photoconductive layer.

Abstract: A photoconductive member having a photoconductive layer on a supporting member, said supporting member comprises a metal member having unevenness with a plurality of spherical mark impressions formed on the surface.

Abstract: The present invention is concerned with a photosensitive material for electrophotography that comprises forming a photosensitive layer on a substrate, wherein said photosensitive layer is constructed by laminating a charge transfer layer, a first charge carrier generating layer and a second charge carrier generating layer in order from said substrate side to free surface, and said charge transfer layer and second charge carrier generating layer each has a band gap wider than that of said first charge carrier generating layer.

Abstract: There is provided a light receiving member which comprises a support and a light receiving layer having a photosensitive layer composed of amorphous material containing silicon atoms and at least either germanium atoms or tin atoms and a surface layer, said surface layer being of multi-layered structure having at least an abrasion-resistant layer at the outermost side and a reflection preventive layer in the inside, and said support having a surface provided with irregularities composed of spherical dimples. The light receiving member overcomes all of the problems in the conventional light receiving member comprising a light receiving layer composed of an amorphous silicon and, in particular, effectively prevents the occurrence of interference fringe in the formed images due to the interference phenomenon thereby forming visible images of excellent quality even in the case of using coherent laser beams possible producing interference as a light source.

Abstract: A barrier layer of amorphous silicon carbide is formed on aluminum drum, and a photoconductive layer formed of a mixture of para-.mu.c-Si and a-Si is formed on the surface of the barrier layer. An a-Si surface layer is formed on the photoconductive layer. When the electrophotographic photoreceptor is exposed to a light ray, carriers are generated by the ray, which is visible or has a near-infrared wavelength, due to a smaller energy gap of the para-.mu.c-Si in the layer.

Abstract: A printing member for electrostatic photocopying including a substrate having a conductive surface; and a photoelectrically-sensitive, electrically chargeable layer on the conductive surface of the substrate; wherein the photo-electrically-sensitive, electrically chargeable layer has (a) a first layer member formed on the conductive surface of the substrate, the first layer member having a P or N or I type first non-single-crystal semiconductor layer or a first semi-insulating or insulating layer, (b) a second layer member formed on the first layer member, the second layer member being a first laminate member having an I type second non-single-crystal semiconductor layer and an I type third non-single-crystal semiconductor layer having a small energy band gap than that of the second non-single-crystal semiconductor layer, and (c) a third layer member formed on the second non-single-crystal semiconductor layer, the third layer member having an I type fourth non-single-crystal semiconductor layer having an equa

Abstract: A first blocking layer is formed of amorphous silicon carbide (a-Si:C) or amorphous silicon nitride (a-Si:N) on a conductive substrate. The first blocking layer contains 1.times.10.sup.-4 to 1.0 atomic % of a Group III or V element in the Periodic Table. A second blocking layer formed of a-Si:C or a-Si:N on the first blocking layer contains 1.times.10.sup.-8 to 1.times.10.sup.-4 atomic %. The second blocking layer has a thickness of 5 to 40 .mu.m, and a photoconductive layer formed of a-Si is stacked on the second blocking layer to a thickness of 0.5 to 5 .mu.m. With this multilayer structure, a photosensitive member having high charging and potential holding properties can be obtained.

Abstract: A photoconductive member is provided, which comprises a support and a light receiving layer provided on said support containing an amorphous material comprising silicon atoms as the matrix, the free surface of said light receiving layer having a contact angle with water of 75.degree. or higher.

Abstract: A photoconductor which comprises, on a conductive substrate, a photoconductive layer of amorphous silicon hydride to which a first impurity consisting essentially of an element of Group Va or Group VIa of the Periodic Table is added. The contents of the first impurity and hydrogen in the amorphous silicon hydride layer vary in section from one side toward the other side of said layer.

Abstract: A photoconductive layer of an electrophotographic photoreceptor has a super lattice structure obtained by alternately stacking thin layers (the thickness falls within the range of 30 to 200 .ANG.) of at least two types of amorphous semiconductors having different optical band gaps. In the super lattice structure, when the layer having a narrow bandgap is sandwiched between the layers having wide bandgaps, a quantum well is formed. By the quantum effect, electrons in the well are shifted to cause high mobility of carriers. When the super lattice structure is applied to the photoconductive layer of the electrophotographic photoreceptor, the number of carriers generated at the interface between the thin layers is large.

Abstract: A light-receiving member comprises a substrate for light-receiving member and a light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms, a second layer comprising an amorphous material containing silicon atoms and exhibiting a photoconductivity, and a surface layer comprising an amorphous material containing silicon atoms and carbon atoms provided on the substrate successively from the substrate side, said light-receiving layer having at least one pair of nonparallel interfaces within a short range and said nonparallel interfaces being arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction.

Abstract: A semiconductor element is mainly composed of a polycrystalline Si thin film layer containing 0.01-3 atomic %, and further having a maximum surface unevenness of substantially not more than 800 .ANG. and/or a particular range of etching rate when etched with a predetermined etchant.

Abstract: In an electrophotographic photosensitive member according to the present invention, a barrier layer is formed on a conductive substrate; a first layer of a photoconductive layer on the barrier layer, and a second layer on the first layer. Formed of microcrystalline silicon containing hydrogen, the first layer is highly sensitive to long-wavelength light. The second layer contains hydrogen and at least one element selected from carbon, oxygen, and nitrogen. The barrier layer is formed of microcrystalline silicon containing an element included in group III or V of the periodic table. The rectifying action of the barrier layer prevents carriers from being injected into the photoconductive layer from the substrate side. Containing carbon, oxygen, or nitrogen, the barrier layer has high dark resistance and chargeability.

Abstract: A first blocking layer is formed of amorphous silicon carbide (a-Si:C) or amorphous silicon nitride (a-Si:N) on a conductive substrate. The first blocking layer contains 1.times.10.sup.-4 to 1.0 atomic % of a Group III or V element in the Periodic Table. A second blocking layer formed of a-Si:C or a-Si:N on the first blocking layer contains 1.times.10.sup.-8 to 1.times.10.sup.-4 atomic %. The second blocking layer has a thickness of 5 to 40 .mu.m, and a photoconductive layer formed of a-Si is stacked on the second blocking layer to a thickness of 0.5 to 5 .mu.m. With this multilayer structure, a photosensitive member having high charging and potential holding properties can be obtained.

Abstract: A blocking layer is formed of amorphous silicon carbide (a-Si:C) or amorphous silicon nitride (a-Si:N) on a conductive substrate. A first photoconductive layer formed of a-Si:C or a-Si:N on the blocking layer contains 1.times.10.sup.-6 to 1.times.10.sup.-3 atomic % of a Group III or V element in the Periodic Table. A second photoconductive layer formed of on the first photoconductive layer contains 1.times.10.sup.-6 to 1.times.10.sup.-3 atomic % of a Group III or V element. The second photoconductive layer has a thickness of 0.1 to 5 .mu.m. With this multilayer structure, a photosensitive member having high charging and potential holding properties can be obtained.

Abstract: In an electrophotographic photosensitive member according to the present invention, a barrier layer is formed on a conductive substrate, and a photoconductive layer on the barrier layer. The photoconductive layer is formed of a microcrystalline silicon layer, whose crystallinity varies all the way through its thickness. The higher the crystallinity of the microcrystalline silicon layer, the more distinguishable are the crystalline properties, the narrower is the optical band gap, and the higher is the sensitivity to long-wavelength light. If the crystallinity becomes lower, then the amorphous properties are enhanced, and the resistance is increased in proportion. Thus, the chargeability and the sensitivity to long-wavelength light of the microcrystalline silicon layer can be improved by varying its crystallinity in the photoconductive layer.

Abstract: A light-receiving member comprises a substrate having a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subprojection overlapping each other, and a light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms and a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity provided on said substrate successively from the substrate side.

Abstract: A substrate for light-receiving members has a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subprojection overlapping each other.

Abstract: A light-receiving member comprises a substrate having a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subprojection overlapping each other, and a light-receiving layer with a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms, a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, and a surface layer having the reflection preventive function provided successively from the substrate side, said light-receiving layer containing at least one selected from oxygen atoms, carbon atoms and nitrogen atoms.

Abstract: A light-receiving member comprises a substrate having a large number of projection parts, whose cross-sectional shape at a given cross-sectional position is a projection shape formed of a main peak and an auxiliary peak as overlapped, on the surface of the substrate, and a light-receiving layer comprising a layer containing an amorphous material including silicon atoms, at least one part of the layer region of the layer being photosensitive, and a surface layer having a reflection-preventive function.An electrophotographic system comprises the above-mentioned light-receiving member.

Abstract: A light-receiving member comprises a substrate having a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subprojection overlapping each other, and a light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms, a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity and a surface layer having reflection preventive function provided on the substrate successively from the substrate side.

Abstract: A light-receiving member comprises a substrate having a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subprojection overlapping each other, and a light-receiving layer comprising a layer comprising an amorphous material containing silicon atoms, at least a part of the layer region of which has photosensitivity and a surface layer comprising an amorphous material containing silicon atoms and carbon atoms.

Abstract: A light receiving member comprises a light receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms, a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity and a surface layer having reflection preventive function provided on a substrate successively from the substrate side, said light receiving layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction.

Abstract: A light receiving member comprises a substrate for light receiving member, a surface layer having reflection preventive function and a light receiving layer of a multi-layer structure having at least one photosensitive layer comprising an amorphous material containing silicon atoms on the substrate, said light receiving layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction.

Abstract: The invention disclosed relates to a photosensitive member which comprises a conductive substrate, a first amorphous silicon: germanium layer, an amorphous silicon layer formed on said first layer and having a thickness of about 10 to 100 .mu.m and a second amorphous silicon: germanium layer formed on said amorphous silicon layer and having a thickness of less than about 4 .mu.m. The photosensitive member of the present invention has improved sensitivity toward long wavelength light and excellent chargeability, and is free of residual potential and interference phenomena.

Abstract: A light-receiving member comprises a substrate and a light-receiving layer of a multi-layer structure having at least one photosensitive layer and a surface layer comprising an morphous material containing silicon atoms and carbon atoms, said light-receiving layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction, said non-parallel interfaces being connected to one another smoothly in the direction in which they are arranged.

Abstract: The present invention relates to improvements in a substrate for producing an electrophotographic sensitive member having a photoconductive layer formed with amorphous silicon. An electrophotographic sensitive member, which is superior in moldability, corrosion resistance, strength, charging electric potential and the like, is formed when an aluminium material, which contains at least one of iron and manganese or a combination of each at 0.30 or less % by weight, is used as a substrate on which a photoconductive layer formed with amorphous silicon is laminated; and/or the surface roughness of said substrate is 0.5 S or less; and/or an aluminium substrate containing magnesium at 0.5 to 10.0% by weight is used.

Abstract: A photoreceptor for electrophotography utilizing a-Si:N:H:F, wherein a stable high-sensitive layer is provided and the time-lapse variation in characteristics is reduced in the use of an a-Si.sub.1-x N.sub.x layer as a sensitive layer.

Abstract: An electrophotographic photoconductor is disclosed, which comprises a support material, an intermediate layer, a photosensitive layer and a surface protection layer for protecting the photosensitive layer, which are successively overlaid on the support material, and the photosensitive layer comprises an amorphous silicon carbon nitride containing at least hydrogen or halogen having the formula of a-Si:C:N(H.X), where X represents halogen, or an amorphous silicon carbon nitride of the formula of a-Si:C:N:O(H.X) (where X represents halogen) which contains at least hydrogen or halogen.

Abstract: The present invention relates to a photosensitive member containing an a-Si:Ge layer with an a-Si intermediate layer.A photosensitive member containing a-Si:Ge has an excellent sensitivity to long wave light so that it is suitable for an electrophotographic system equipped with laser beam printer. However, the sensitivity of the member had not been improved because of their weak dark resistance and lower mobility of carrier in general.In the present invention, it is provided a photosensitive member having a-Si:Ge layer excellent in the sensitivity to long wave length by controlling the balance between the Ge content and the thickness of the a-Si:Ge layer and the concentration of oxygen or oxygen and carbon in the electroconductive layer.

Abstract: A substrate for an amorphous silicon photoreceptor prepared by first forming an amorphous silicon photoreceptive layer on an aluminum or aluminum alloy body by using a plasma CVD apparatus, and by arranging so that those crystal grains located in the surface of the substrate each has a diameter of 1 cm or smaller, to thereby make it possible to obtain a satisfactory image stably and repetitively.

Abstract: A photoconductive device including a conductive substrate, a photoconductive layer of amorphous silicon containing at least hydrogen and a surface protection layer applied on the photoconductive layer a dopant is added in the photoconductive layer at least near the interface with the surface protection layer, and the concentration of the dopant increases in the direction perpendicular to the interface. The surface protection layer has an optical energy gap larger than that of the photoconductive layer.A further photoconductive device comprising a conductive substrate; a photoconductive layer of amorphous silicon applied on the conductive substrate and a surface protection layer of amorphous silicon applied on said photoconductive layer wherein the surface protection layer contains oxygen, and is doped with a IIIb element.