Abstract: Though a-Si:Ge has a high absorption of long wave light, so that it can be used to improve the electrophotosensitive members in the sensitivity, and it is expected as photosensitive members for printers using semiconductor laser. However, a-Si:Ge has a tendency to prevent the movement of a carrier generated to lower a sensitivity and increase a residual potential.In the present invention, the above problems are improved by forming a depletion layer in a-Si:Ge layer to improve the mobility in forward direction of the carrier.

Abstract: The present invention provides an electrophotosensitive member comprising laminating a layer composed substantially of amorphous silicon, a layer composed substantially of amorphous silicon:germanium and a layer composed substantially of amorphous silicon in this order on an electroconductive substrate, an electrophotosensitive member comprising laminating a layer composed substantially of amorphous silicon, a layer composed substantially of amorphous silicon:germanium and a layer composed substantially of amorphous silicon in this order on an electroconductive substrate, characterized in that said layer composed substantially of amorphous silicon:germanium is situated away from said substrate by a range of 20 to 80% based on the total thickness of these layers.

Abstract: A light receiving member comprises a light receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms, a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity and a surface layer having reflection preventive function provided on a substrate successively from the substrate side, said light receiving layer containing at least one selected from oxygen atoms, carbon atoms and nitrogen atoms and having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction.

Abstract: A photoreceptor comprising a support bearing thereon a charge transport layer comprising one selected from the group consisting of a--SiC:H, a--SiC:F and a--SiC:H:F, a charge generating layer comprising one selected from the group consisting of a--SiH, a--SiF and a SiH:F, an a--Si type surface modifying layer containing one selected from the group consisting of N, O and C, and an a--Si type interlayer containing at least one selected from the group consisting of N, O and C, the content of said at least one of N, O and C in said interlayer being less than in said surface modifying layer, said interlayer being interposed between said charge generating layer and said surface modifying layer.

Abstract: A photoconducting sulfur- and hydrogen-doped amorphous carbon is prepared by deposition from a plasma glow discharge in a gas mixture which comprises at least one hydrocarbon and at least one sulfur source.

Abstract: An electrophotographic photosensitive member has a conductive substrate, a first layer structure with a single layer made mainly of amorphous silicon formed on the substrate, and a second layer structure including multiple layers also mainly made of amorphous silicon layered in succession on the first layer structure. The plurality of second layers includes at least two high resistance layers having a relatively high resistance value and at least one low resistance layer having a relatively low resistance value compared to the high resistance value. The layers of the second layer structure are layered alternately on the first layer structure so that the first and last layers in the second layer structure are high resistance layers.

Abstract: A process for producing a photoreceptor is disclosed. A gaseous compound of the constituent materials of the photoreceptor is decomposed by glow discharge in the presence of a metal, thereby forming a constituent layer containing atoms and or ions of the metal.

Abstract: Disclosed is an electrostatographic imaging member comprised of a supporting substrate, a blocking layer of hydrogenated amorphous silicon with dopants, a hydrogenated amorphous silicon photoconducting layer with dopants, and in contact therewith a top overcoating layer of nonstoichiometric silicon nitride with from between 67 to 95 atomic percent of silicon, and from between 33 to 5 atomic percent of nitrogen.

Abstract: An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: A method of making an electrophotographic member with an a-Si photoconductive layer and an a-c layer as a surface protecting layer is disclosed, wherein the a-c layer is deposited on the photoconductive layer; which a-c layer contains hydrogen or hydrogen and fluorine, and which layer is formed by a glow discharge method.

Abstract: Disclosed is imaging member comprised of a supporting substrate, a blocking layer of hydrogenated amorphous silicon with dopants, a hydrogenated amorphous silicon photoconductive layer, a first overcoating layer of nonstoichiometric silicon nitride with from between 5 to 33 atomic percent of nitrogen and 95 to 67 atomic percent of silicon, and a second overcoating layer thereover of near stoichiometric silicon nitride with from between 33 to 57 atomic percent of nitrogen, and 67 to 43 atomic percent of silicon.

Abstract: A photoconductive member, having a support and a photoconductive light receiving layer comprising a matrix of silicon atoms containing at least one of hydrogen atoms and halogen atoms provided on said support, said light receiving layer having a layer region with a layer thickness of at least 20 .ANG. from the side of the free surface, in which the spin density measured by Electron Spin Resonance is 1.0.times.10.sup.20 spins/cm.sup.3 or less.

Abstract: The present invention relates to an electrophotographic sensitive member for use in a laser line printer and a method of producing same.

Abstract: A light receiving member comprises a light receiving layer of a multi-layer structure having at least one photosensitive layer comprising an amorphous material containing silicon atoms on a substrate, said photosensitive layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arranged in a large number in at least one direction within a plane perpendicular to the layer thickness direction.

Abstract: The present invention relates to a photosensitive member which includes a photoconductive layer of amorphous silicon and an insulating layer formed thereover and including amorphous silicon, carbon and an element in Group III A of the Periodic Table. Carbon is included in an amount of about 35 to 65 atomic % at the outer most surface of the insulating layer and a minimum amount at the interface with the photoconductive layer. The Group III A element is included to control a majority carrier of the insulating layer to be a polarity opposite to the polarity of charging.

Abstract: The present invention relates to a photosensitive member having a photoconductive layer of amorphous silicon. On the photoconductive layer, an amorphous silicon insulating layer is formed and this layer includes carbon and an element in Group IIIA of the Periodic Table. The Group IIIA element is included to control the conductivity of the insulating layer in such fashion that the majority carrier thereof is opposite in polarity to the charging polarity.

Abstract: A photoconductive member is provided which has substrate for photoconductive member and a light-receiving layer having photoconductivity with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity consisting of an amorphous material containing silicon atoms are successively provided from the aforesaid substrate side, said light-receiving layer containing carbon atoms together with a substance (C) for controlling conductivity in a distribution state such that, in said light-receiving layer, the maximum value C(PN).sub.max of the distribution concentration of said substance (c) in the layer thickness direction exists within said second layer region (S) and, in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate.

Abstract: An electrostatographic imaging member comprising a photoconductive layer comprising an organic resin binder and photoconductive particles comprising selenium coated with thin layer of a reaction product of a hydrolyzed aminosilane. This electrostatographic imaging member may be prepared by forming a mixture of an organic resin binder, the photoconductive particles coated with a thin layer of a reaction product of a hydrolyzed aminosilane and a solvent for the binder to form a uniform dispersion, forming the dispersion into a uniform layer, and drying the uniform layer to form a photoconductive layer.

Abstract: A light-receiving member has a substrate and a light receiving layer having photoconductivity containing an amorphous material comprising a matrix of silicon atoms provided on said substrate, said light receiving layer having, from the said support side with respect to the layer thickness direction of said layer, a first layer region containing atoms of the group III of the periodic table at higher concentration toward the side of said substrate and a second layer region containing atoms of the group III of the periodic table and nitrogen atoms.

Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer exhibiting photoconductivity and comprising an amorphous material comprising silicon atoms as a matrix and at least one member selected from the group consisting of hydrogen atoms and halogen atoms as a constituting atom, characterized in that the amorphous layer has a first layer region containing oxygen atoms and a second layer region containing an atom of Group III or an atom of Group V of the Periodic Table and existing interiorly at the support side, and the first layer region and the second layer region share in common at least a portion of said mutual region, and there is the relation:t.sub.B /(T+t.sub.B).ltoreq.0.4where t.sub.B is the thickness of the second layer region and T is a difference between the thickness of the amorphous layer and the thickness of the second layer region t.sub.B.

Abstract: An electrophotographic photoresponsive device for use in electrophotography comprised of a supporting substrate, and an amorphous silicon composition containing from about 25 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, nitrogen, or arsenic. Also disclosed is a photoresponsive electrophotographic device comprised of a supporting substrate, an uncompensated amorphous silicon layer and an amorphous silicon composition containing from about 100 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, wherein the compensation increases from zero percent compensation to one percent compensation, for a distance of from about 0.

Abstract: Disclosed is a photoresponsive imaging member comprised of amorphous carbon.

Abstract: A photoconductive device comprising a conductive substrate and a photoconductive layer applied on the conductive substrate, which photoconductive layer is made of amorphous silicon containing at least hydrogen, wherein the photoconductive layer contains hydroxy radicals.Another photoconductive device comprising a conductive substrate, a photoconductive layer of amorphous silicon containing at least hydrogen and a surface protection layer applied on the photoconductive layer; wherein a dopant is added in the photoconductive layer at least near the interface with the surface protection layer, and the concentration of the dopant increases in the direction perpendicular to the interface and the surface protection layer has an optical energy gap larger than that of the photoconductive layer.

Abstract: The present invention relates to an electrophotographic sensitive member comprising an amorphous fluorinated silicon photoconductive layer.

Abstract: A photoconductive device of decreased resistivity is provided by using at least one zinc oxide transparent conductive layer in conjunction with a thin film amorphous silicon photoconductor. The zinc oxide layer can be used as the front contact, the back contact or both the front and back contacts of the photoconductive device.

Abstract: A photoconductive member, which comprises a support for photoconductive member and a light receiving layer having a layer constitution comprising a first layer region comprising an amorphous material containing Ge.sub.x Si.sub.1-x (0.95<x.ltoreq.1) and a second layer region comprising silicon atoms exhibiting photoconductivity, two layer regions being provided successively from the support side.

Abstract: A vapor-deposited film of selenium as a photoreceptor for electrophotography contains not more than 50 parts per million of oxygen. In producing the film, the oxygen content in the starting material selenium is controlled so that the resulting film contains oxygen within the specified range. The original oxygen content is reduced by vacuum distillation of the material selenium in a high vacuum, reduced-pressure distillation in high purity hydrogen, or preservation of the selenium shot in vacuo or in an inert gas. The starting material is obtained by mixing or melting selenium with a predetermined amount of selenium dioxide, or by carrying out vacuum distillation either of selenium at a vacuum degree of about 10.sup.-2 torr and thereby converting part of the material selenium into selenium dioxide, or of a mixture of selenium and a predetermined amount of selenium dioxide. The vacuum degree during the vapor deposition is controlled so that the oxygen content in the resulting film is 50 ppm or less.

Abstract: Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.

Abstract: Disclosed is an electrographic imaging member consisting essentially of a supporting substrate, a hydrogenated amorphous silicon photogenerating layer, and in contact therewith a charge transporting layer of plasma deposited silicon oxide containing at least 50 atomic percent of oxygen.

Abstract: An improved layered photoresponsive imaging member comprised of a supporting substrate, a photogenerating layer, and an electron transporting layer comprised of an inorganic photoconductive composition chemically modified to enable enhancement of the electron transport properties thereof.

Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing a substance for controlling conductivity (C) in a distributed state such that, in said light receiving layer, the maximum value of the content of said substance (C) in the layer thickness direction exists within said second layer region (S) or at the interface with said first layer region (G) and, in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate.

Abstract: A light-receiving member comprises a substrate for light-receiving member and a light-receiving layer having photoconductivity provided on said substrate, said light-receiving layer comprising from the side of said substrate a first layer (I) comprising an amorphous material containing silicon atoms, a second layer (II) comprising an amorphous material containing silicon atoms and germanium atoms and a third layer (III) comprising an amorphous material containing silicon atoms and oxygen atoms, and the germanium atoms contained in said second layer (II) being distributed ununiformly in the layer thickness direction of said layer.

Abstract: A photoconductive member comprises a substrate for the photoconductive member and a light receiving layer exhibiting photoconductivity provided on said substrate comprising an amorphous material containing silicon atoms and germanium atoms, the light receiving lager having a layer region (N) containing nitrogen atoms, and the layer region (N) having a region (X) in which the content C (N) of nitrogen atoms in the layer thickness direction smoothly and continuously increases toward the upper surface of the light receiving layer.

Abstract: An electrophotographic element which comprises forming, on an electrically conductive substrate, an intermediate layer designed to function so that carriers homopolar with those injected from said substrate at the time of charging may become majority carrier, and forming, on said intermediate layer, a photoconductive layer.

Abstract: A printing member for electrostatic photocopying, comprises a substrate having a conductive surface and a photoelectric-sensitive, electrically chargeable layer deposited on the conductive surface of the substrate. The electrically chargeable layer has a non-single crystal semiconductor layer having a built-in-potential, or the non-single crystal semiconductor layer and an insulating or semi-insulating layer.

Abstract: A photoconductive member having a substrate for photoconductive member and a light-receiving layer having photoconductivity provided on said substrate is prepared in which the light-receiving layer comprises from the side of said substrate a first layer (I) constituted of an amorphous material containing silicon atoms, a second layer (II) constituted of an amorphous material containing silicon atoms and germanium atoms and a third layer (III) constituted of an amorphous material containing silicon atoms and carbon atoms, and the germanium atoms contained in said second layer (II) being distributed ununiformly in the layer thickness direction of said layer.

Abstract: A photoconductive member is provided which comprises a substrate for a photoconductive member and a light receiving layer provided on said substrate having a layer constitution comprising (1) a first layer in which a layer region (G) comprising an amorphous material containing germanium atoms and a layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, and (2) a second layer which is constituted of an amorphous material comprising silicon atoms and at least one of carbon atoms and nitrogen atoms, said first layer containing oxygen atoms and having a first layer region, a third layer region and a second layer region, with oxygen atom distribution concentration in the layer thickness direction of C(1), C(3), and C(2), respectively, in the order mentioned from the substrate side with a proviso that C(3) does not solely take the maximum value and when either one of C(1) and C(2) is zero, the other two are not zero

Abstract: A photoconductive member comprises a substrate and a layer constituted of an amorphous material containing Si and Ge and exhibiting photoconductivity, said layer having a layer region containing nitrogen ununiformly in the direction of layer thickness, the distribution concentration curve of nitrogen in the direction of layer thickness being smooth and the maximum distribution concentration being present in said layer.An amorphous layer of Si containing at least one of oxygen and carbon may overlie the above mentioned layer.

Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer having photoconductivity comprising an amorphous material containing silicon atoms and germanium atoms, said light receiving layer containing carbon atoms and having a first layer region, a third layer region and a second layer region with the carbon atom content in the layer thickness direction of C(1), C(3) and C(2), respectively, in the order from the substrate side [with the proviso that when C(3) cannot solely be the maximum and either one of C(1) and C(2) is zero, the other two are not zero and not equal to each other, or when C(3) is zero, the other two are not zero, or when none of C(1), C(2) and C(3) is zero, the three of C(1), C(2) and C(3) cannot be equal at the same time and C(3) cannot solely be the maximum].

Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer having photoconductivity comprising an amorphous material containing silicon atoms and germanium atoms, said light receiving layer containing nitrogen atoms and having a first layer region, a third layer region and a second layer region with the nitrogen atom content in the layer thickness direction of C(1), C(3) and C(2), respectively, in the order from the substrate side (with the proviso that when C(3) cannot solely be the maximum and either one of C(1) and C(2) is zero, the other two are not zero and not equal to each other, or when C(3) is zero, the other two are not zero, or when none of C(1), C(2) and C(3) is zero, the three of C(1), C(2) and C(3) cannot be equal at the same time and C(3) cannot solely be the maximum).

Abstract: A photoconductive member is provided which has a substrate for photoconductive member, and a light-receiving layer comprising (1) a first layer with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided on said substrate from the aforesaid substrate side, and (2) a second layer comprising an amorphous material containing silicon atoms and at least one of carbon atoms and nitrogen atoms, said first layer having a layer region (O) containing oxygen atoms, wherein the depth profile of oxygen atoms in the layer thickness direction in said layer region (O) is increased smoothly and continuously toward the upper end surface of the first layer.

Abstract: A photoconductive member, is provided which has a support, a first layer having photoconductivity containing an amorphous material comprising silicon atoms as a matrix provided on said support and a second layer containing silicon atoms and carbon atoms as essential components provided on said first layer, wherein said first layer contains at least one kind of atoms selected from the group III of the periodic table together with nitrogen atoms, with the nitrogen atoms having a substantially uniform concentration distribution within said first layer and the group III atoms of the periodic table having a depth concentration profile of said atoms with respect to the layer thickness direction having the maximum concentration at the end surface on the side of said support or in the vicinity thereof and having the concentration of said atoms tending to decrease continuously toward the second layer.

Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer having a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing carbon atoms.

Abstract: A photoconductive member comprises a substrate and a light receiving layer having photoconductivity which comprises an amorphous material containing silicon atoms and germanium atoms, the germanium atoms being distributed non-uniformly in the layer thickness direction in the light receiving layer and nitrogen atoms being contained in the light receiving layer.

Abstract: A printing member for electrostatic photocopying, comprises a substrate having a conductive surface and a photoelectric-sensitive, electrically chargeable layer deposited on the conductive surface of the substrate. The electrically chargeable layer has a non-single crystal semiconductor layer having a built-in-potential, or the non-single crystal semiconductor layer and an insulating or semi-insulating layer.

Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing nitrogen atoms.

Abstract: A photoconductive member comprises a substrate, a layer composed of an amorphous material comprising Si and Ge, said layer having a layer region (C) containing carbon atoms. The layer region (C) has a region (X) where the concentration of carbon atoms increases in the direction of layer thickness toward the upper surface of said layer.An amorphous layer of silicon containing at least one of nitrogen and oxygen may overlie said layer.

Abstract: A photoconductive member comprises a support for a photoconductive member and a light receiving layer overlaying the support comprising a first layer region (G) comprising an amorphous material containing silicon atoms and germanium atoms and a second layer (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms, the first layer region (G) and the second layer region (S) being provided in this order from the support side, and the distribution of germanium atoms in the said first layer (G) being not uniform in the layer thickness direction and nitrogen atoms being contained in the light receiving layer. There may be provided on the light receiving layer a layer comprising an amorphous material containing silicon atoms and at least one of carbon atoms and oxygen atoms.

Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing nitrogen atoms together with a substance for controlling conductivity (C) in a distributed state such that, in said light receiving layer, the maximum value C(PN).sub.max of the content of said substance (C) in the layer thickness direction exists within said second layer region (S) or at the interface between said first and second layer region and, in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate.

Abstract: A photoconductive member comprises a support for a photoconductive member and a light receiving layer constituted of a first layer region (G) comprising an amorphous material containing silicon atoms and germanium atoms and a second layer region (S) comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, the first layer region (G) and the second layer region (S) being provided in the mentioned order on the support, the distribution of germanium atoms in the first layer region (G) being ununiform in the direction of layer thickness, and carbon atoms being contained in the light receiving layer.