Abstract: A photoconductive member comprises a support for a photoconductive member and a light receiving layer constituted of a first layer region (G) comprising an amorphous material containing silicon atoms and germanium atoms and a second layer region (S) comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, the first layer region (G) and the second layer region (S) being provided in the mentioned order on the support, the distribution of germanium atoms in the first layer region (G) being ununiform in the direction of layer thickness, and carbon atoms being contained in the light receiving layer.
Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing nitrogen atoms together with a substance for controlling conductivity (C) in a distributed state such that, in said light receiving layer, the maximum value C(PN).sub.max of the content of said substance (C) in the layer thickness direction exists within said second layer region (S) or at the interface between said first and second layer region and, in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate.
Abstract: A printing member for electrostatic photocopying, comprises a substrate having a conductive surface and a photoelectric-sensitive, electrically chargeable layer deposited on the conductive surface of the substrate. The electrically chargeable layer has a non-single crystal semiconductor layer having a built-in-potential, or the non-single crystal semiconductor layer and an insulating or semi-insulating layer.
Abstract: A photoconductive member is provided which comprises a substrate and a photoconductive light receiving layer made up of an amorphous material containing silicon atoms and germanium atoms, the light receiving layer containing nitrogen atoms and having a first layer region (1), a third layer region (3), and a second layer region (2) of nitrogen atom distribution concentrations C(1), C(3), and C(2), respectively, in the thickness direction, in that order from the substrate side to the opposite side, wherein C(3) is higher than any of C(2) and C(1) and one of C(1) and C(2) is not zero.
Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer constitution in which a layer region (G) comprising an amorphous material containing germanium atoms and a layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer having a layer region (O) containing oxygen atoms, the depth profile of oxygen atoms in said layer region (O) being increased smoothly and continuously toward the upper end surface of the light receiving layer.
Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer consititution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing oxygen atoms together with a substance for controlling conductivity (C) in a distributed state such that, in said light receiving layer, the maximum value C(PN).sub.max of the content of said substance (C) in the layer thickness direction exists within said second layer region (S) or at the interface with said first layer region (G) and, in said second layer region(S), said substance (C) is distributed in greater amount on the side of said substrate.
Abstract: A photoconductive member comprises a support for photoconductive member and a light-receiving layer provided on said support having a layer constitution in which a layer region (G) comprising an amorphous material containing germanium atoms and a layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the support side, said light-receiving layer having a first layer region (1), a third layer region (3) and a second layer region (2), each containing oxygen atoms, with the distribution concentrations in the layer thickness direction of C(1), C(3) and C(2), respectively, in the order mentioned from the support side, provided that when C(3) cannot be solely the maximum, and either one of C(1) and C(2) is 0, the other two are not 0 and not equal, or when C(3) is 0, the other two are not 0.
Abstract: An article having improved electrostatic charge transfer properties. The improvement in charge transfer properties results from subjecting a layer of photoconductive-insulative material or dielectric material on the charge donor or a layer of dielectric material on the charge receptor, or both layers, to plasma treatment process to provide an oxygen-enriched surface to the photoconductive-insulative layer and/or the dielectric layer.
Type:
Grant
Filed:
October 30, 1984
Date of Patent:
February 11, 1986
Assignee:
Minnesota Mining and Manufacturing Company
Inventors:
Stephen J. Willett, Hsin H. Chou, Carol E. Hendrickson, William A. Hendrickson
Abstract: A photoconductive member comprises a support and a light receiving layer comprising a first layer region comprising at least germanium atoms and being crystallized at least a portion thereof, a second region comprising an amorphous material comprising at least both of silicon atoms and germanium atoms and a third layer region comprising an amorphous material comprising at least silicon atoms, and exhibiting photoconductivity said layer regions being provided successively in this order from the said support side.
Abstract: An electrophotographic photosensitive member has a conductive substrate, a first layer structure with a single layer made mainly of amorphous silicon formed on the substrate, and a second layer structure including multiple layers also mainly made of amorphous silicon layered in succession on the first layer structure. The plurality of second layers includes at least two high resistance layers having a relatively high resistance value and at least one low resistance layer having a relatively low resistance value compared to the high resistance value. The layers of the second layer structure are layered alternately on the first layer structure so that the first and last layers in the second layer structure are high resistance layers.
Abstract: A photoconductive member is provided which comprises a substrate and a light receiving layer having photoconductivity which comprises an amorphous material containing silicon atoms and germanium atoms, the distribution of germanium atoms therein being nonuniform in the layer thickness direction, and carbon atoms being contained in the light receiving layer.Said photoconductive member can further comprise thereon another layer which comprises amorphous material containing silicon atoms as a matrix and at least one kind of atoms selected from the group of nitrogen atoms and oxygen atoms.
Abstract: An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.
Abstract: An electrophotographic photosensitive member constituted of an electroconductive supporting substrate and a photoconductive layer provided on said substrate, said photoconductive layer being composed primarily of a microcrystalline silicon or a layered product of a microcrystalline silicon and an amorphous silicon.
Abstract: A photoconductive member comprising a support and a light receiving layer provided on said support, having photoconductivity containing silicon atoms as a matrix and at least hydrogen atoms as constituent atom, said light receiving layer having a layer region with depth profile such that the content of hydrogen atoms contained therein is decreased in the direction of layer thickness toward both ends of said layer.
Abstract: A printing member for electrostatic photocopying, comprises a substrate having a conductive surface and a photoelectric-sensitive, electrically chargeable layer deposited on the conductive surface of the substrate. The electrically chargeable layer has a non-single crystal semiconductor layer having a built-in-potential, or the non-single crystal semiconductor layer and an insulating or semi-insulating layer.
Abstract: A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.
Abstract: A photoconductive member comprises a support for a photoconductive member; a first amorphous layer comprising an amorphous material containing silicon atoms as a matrix and exhibiting photoconductivity, said first amorphous layer having a first layer region containing oxygen atoms as constituent atoms in a distribution state which is ununiform and continuous in the direction of layer thickness and a second layer region containing atoms belonging to the group III of the periodic table as constituent atoms in a distribution state which is continuous in the direction of layer thickness, said first layer region existing internally beneath the surface of said first amorphous layer; and a second amorphous layer comprising an amorphous material represented by any of the following formulae:Si.sub.a C.sub.1-a (0.4<a<1) (1)(Si.sub.b C.sub.1-b).sub.c H.sub.1-c (0.5<b<1, 0.6.ltoreq.c<1) (2)(Si.sub.d C.sub.1-d).sub.e X.sub.1-e (0.47<d<1, 0.8.ltoreq.e<1) (3)(Si.sub.f C.sub.1-f).sub.g (H+X).sub.
Abstract: A process for the preparation of an electrostatographic photosensitive device comprising combining a sodium additive comprising sodium carbonate, sodium bicarbonate, sodium selenite, sodium hydroxide or mixtures thereof with trigonal selenium particles, an organic resin binder and a solvent for the binder to form a milling mixture, milling the milling mixture to form a uniform dispersion, applying the dispersion to a substrate in an even layer and drying the layer.
Abstract: A material consists of an electrically conducting support and a dielectric layer containing in % by weight: 17-80 of a polymeric binder and 20-83 of a finely divided mixed pyrogenic silicon and titanium oxide containing between 10 and 50% by weight of titanium.
Type:
Grant
Filed:
May 24, 1984
Date of Patent:
September 10, 1985
Inventors:
Alexei A. Chuiko, Anatoly V. Morev, Alexandr S. Golovkov, Valentin A. Smirnov, Evgeny F. Voronin, Raisa A. Evlakhova, Galina Y. Guba, Iolita R. Slushnene, Arunas V. Pasvyanskas, Roman V. Sushko
Abstract: A photoconductive member, comprises a support for a photoconductive member, a first amorphous layer exhibiting photoconductivity comprising an amorphous material containing silicon atoms as a martix, said first amorphous layer having a first layer region containing oxygen atoms in a distribution which is continuous and ununiform in the direction of layer thickness and a second layer region containing atoms belonging to the group III of the periodic table as constituent atoms in a distribution which is continuous and ununiform in the direction of layer thickness, and a second amorphous layer comprising an amorphous material represented by any of the following formulae:Si.sub.a C.sub.1-a (0.4<a<1) (1)(Si.sub.b C.sub.1-b).sub.c H.sub.1-c (0.5<b<1, 0.6.ltoreq.c<1) (2)(Si.sub.d C.sub.1-d).sub.e X.sub.1-e (0.47<d<1, 0.8.ltoreq.e<1) (3)(Si.sub.f C.sub.1-f).sub.g (H+X).sub.1-g (0.47<f<1, 0.8.ltoreq.g<1) (4)(wherein X represents a halogen atom).
Abstract: A photoconductive member is provided, which comprises a support for photoconductive member and a light receiving layer with a layer constitution, comprising a first layer region containing at least germanium atoms of which at least a portion is crystallized, a second region comprising an amorphous material containing at least silicon atoms and germanium atoms, a third layer region comprising an amorphous material containing at least silicon atoms and exhibiting photoconductivity, and a fourth layer region comprising an amorphous material containing silicon atoms and carbon atoms, provided successively in the order mentioned from the said support side.
Abstract: A photoconductive member comprises a substrate and a light receiving layer having photoconductive provided on said support, comprising silicon atoms as a matrix and at least halogen atoms as constituent atoms said light receiving layer having a depth profile with respect to the layer thickness direction such that the concentration of halogen atoms contained therein is increased from the said substrate side toward the surface side of the photoconductive member.
Abstract: A photoconductive member comprises a photoconductive layer constituted of an amorphous material containing at least one of hydrogen atoms and halogen atoms in a matrix of silicon atoms and an amorphous layer constituted of an amorphous material containing at least one of hydrogen atoms and halogen atoms in a matrix of boron atoms.
Abstract: Disclosed is a multilayered electrophotographic recording material comprising a charge transfer layer and a charge generating layer on a substrate. The layers are comprised of essentially amorphous silicon. At least 1 atomic percent of nitrogen is present in the charge transfer layer.
Abstract: An electrophotographic photosensitive member has a selenium type photoconductive layer containing 8000 ppm or less oxygen based on selenium. The member is free from a fatigue due to repeated use.
Abstract: The present invention provides a method for preparing a selenium type electrophotographic element comprising the steps of processing the surface of an electrically conductive substrate which has a metal surface by vibrating and sliding a grindstone until a predetermined surface-roughness is obtained and thereafter vapordepositing thereon selenium, selenium alloy or selenium compound in a usual manner.
Abstract: An electrophotographic recording material comprises a conductive substrate, a first photoconductive selenium layer containing halogen disposed on the substrate, and a second photoconductive selenium layer containing arsenic disposed on the second photo conductive layer. The first photo conductive layer disposed on the substrate additionally contains arsenic.
Type:
Grant
Filed:
September 7, 1982
Date of Patent:
April 23, 1985
Assignee:
Licentia Patent-Verwaltungs-GmbH
Inventors:
Hartmut Dulken, Karlheinz Kassel, Wolfgang Mows, Hubert Walsdorfer
Abstract: A photoreceptor comprising a photoconductive layer composed of hydrogenated and/or fluorinated amorphous silicon, a surface modifying layer formed on the above photoconductive layer and composed of hydrogenated and/or fluorinated amorphous silicon carbide and a charge transport layer formed below the above photoconductive layer and composed of hydrogenated and/or fluorinated amorphous silicon carbide wherein the thickness "t" of the above surface modifying layer is selected in a range 400 .ANG..ltoreq.t<2,000 .ANG..
Abstract: A layer of amorphous silicon containing H, preferably 10-40 atomic %H, is used as a photoconductive layer for electrophotographic photosensitive member.
Abstract: A photoconductive member comprising a support for photoconductive member and an amorphous layer exhibiting photoconductivity comprising an amorphous material containing silicon atoms as a matrix is characterized in that said amorphous layer has a first layer region containing, as constituent atoms, oxygen atoms in a distribution which is nonuniform and continuous in the direction of the layer thickness and a second layer region containing, as constituent atoms, the atoms (A) belonging to group III or group V of the periodic table in a distribution which is continuous in the direction of the layer thickness, said second layer existing internally beneath the surface of said amorphous layer.
Abstract: Disclosed is a photosensitive member, or an electrophotographic photosensitive member, characterised by having a photoconductive layer comprising at least one of an amorphous hydrogenated and/or fluorinated silicon germanium and an amorphous hydrogenated and/or fluorinated silicon germanium carbide, a first amorphous hydrogenated and/or fluorinated silicon carbide layer formed on the photoconductive layer and a second amorphous hydrogenated and/or fluorinated silicon carbide layer formed beneath said photoconductive layer.
Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having a layer constitution comprising a first layer region comprising an amorphous material containing silicon atoms and germanium atoms and a second layer region comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, said first and second layer regions being provided successively from the side of said support.
Abstract: A photoconductive member comprises a support for photoconductive member and an amorphous layer comprising an amorphous material containing silicon atoms as a matrix and exhibiting photoconductivity, said amorphous layer having a first layer region containing, as constituent atoms, oxygen atoms and a second layer region containing, as constituent atoms, the atoms belonging to the group V of the periodic table in a distribution which is continuous in the direction of the layer thickness and more enriched toward the side of said support.
Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer containing an amorphous material comprising silicon atom as a matrix and having photoconductivity, said amorphous layer comprising a first layer region containing oxygen atom as a constituent atom, the oxygen atom being distributed continuously in the direction of the layer thickness and enriched at the support side, and a second layer region containing an atom of the group III of the periodic table as a constituent atom, said first layer region being internally present at the support side in the amorphous layer, and the layer thickness T.sub.B of said second layer region and a layer thickness T resulted from subtracting T.sub.B from the layer thickness of the amorphous layer satisfying the relation, T.sub.B /T.ltoreq.1.
Abstract: A photoconductive member comprises a support and an amorphous layer comprising a first layer region and a second layer region, the first layer region having photoconductivity comprising an amorphous material which comprises silicon atoms as a matrix and at least one member selected from hydrogen atoms and halogen atoms as a constituent, the first layer region having a layer region (I) containing an impurity controlling the electroconductivity type at the support side, and the second layer region comprising an amorphous material comprising at least both silicon and carbon as constituents.
Abstract: An x-ray electro-photographic recording material is formed of a photo-conductive layer (1) comprised of a selenium-arsenic alloy and positioned on a transparent electrode layer (4), which is positioned on a further layer (3) comprised of an x-ray luminophore and positioned on a reflective surface (2a) of a film carrier layer (2). In usage, with a positive corona charge on the free photo-conductive layer surface (1a) before x-ray exposure, the luminophore-containing layer (3), during x-ray exposure, converts a component (5) of the x-ray radiation (.gamma.) not absorbed by the photo-conductive layer (1) into visible luminescent light (6) which effects an increase of sensitivity in the photo-conductive layer (1). This recording material can be used in x-ray photograph devices.
Abstract: An electrophotographic photoreceptor comprising a conductive layer and a photosensitive layer of vapor-deposited selenium-antimony alloy film formed thereon is disclosed. The photosensitive layer has an average antimony concentration of 5 to 21 wt % and the center layer thereof except for the skin layer on either side has a change in antimony concentration within 2 wt % in any region that is 1000 deep .ANG. from the surface of the skin layer.
Abstract: An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.
Abstract: A process for producing a photoconductive member, which comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained under a desired reduced pressure and exciting discharging under the gas atmosphere of said starting substances is characterized in that said starting substances are constituted of at least one substance selected from the first group consisting of substances(O) containing oxygen atoms as constituent atom, substances(N) containing nitrogen atoms as constituent atom and substances(C) containing carbon atoms as constituent atom, and at least two compounds selected from the second group consisting of the compounds of the formula:Si.sub.n H.sub.2n+2 (A)wherein n is a positive integer and the compounds of the formula:Si.sub.m H.sub.l X.sub.
Abstract: A photoconductive member comprises a support and an amorphous layer compsed of a first layer region composed of a photoconductive amorphous silicon containing p- or n-type impurity distributed nonuniformly and continuously in the layer thickness direction, and a second layer region composed of Si.sub.a C.sub.1-a (0.4<a<1), [Si.sub.b C.sub.1-b ].sub.c H.sub.1-c (0.5<b<1, 0.6.ltoreq.c<1), [Si.sub.d C.sub.1-d ].sub.e X.sub.1-e (0.47<d<1, 0.8.ltoreq.e<1, X: halogen) or [Si.sub.f C.sub.1-f ].sub.g (H+X).sub.1-g (0.47<f<1, 0.8.ltoreq.g<1, X: halogen].
Abstract: An electrophotographic image-forming member comprises a substrate for electrophotography and an amorphous layer which is laid on said substrate and constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said substrate being constituted of aluminum oxide containing chemi-structurally water at least on the surface thereof, and said amorphous layer having a layer region containing at least one member selected from the group consisting of oxygen atom, nitrogen atom and carbon atom in at least a part thereof, the content of said member in said layer region being distributed unevenly in the direction of the thickness of said layer.
Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing at least one kind of atoms selected from the group consisting of oxygen atoms, carbon atoms and nitrogen atoms as constituent atoms in a distribution which is ununiform and continuous in the direction of layer thickness and a second layer region containing atoms of an element belonging to the group III of the periodic table as constituent atoms in a distribution which is ununiform and continuous in the direction of layer thickness.
Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing as the constituent atom at least one kind of atoms selected from the group consisting of oxygen atoms, carbon atoms and nitrogen atoms in a distribution state which is ununiform and continuous in the direction of layer thickness and a second layer region containing atoms belonging to the group III of the periodic table as constituent atoms in a distribution state which is ununiform and continuous in the direction of layer thickness, said first layer region existing internally below the surface of said amorphous layer.
Abstract: An electrophotographic recording material including a photoconductor made of a selenium compound applied as a layer on an electrically conductive substrate. The photoconductor includes a compound of arsenic, selenium and tellurium of the formula As.sub.2 Se.sub.3-x Te.sub.x, where 0<x<3.
Abstract: A xeroradiographic material comprising a substrate at least one surface of which is electrically conductive, and an X-ray sensitive layer provided on the conductive surface of the substrate and essentially consisting of an organic binder, .gamma.-form crystal grains of a bismuth oxide-based compound oxide and n-type semiconductor grains dispersed in the organic binder. The material is made by dispersing these grains in an organic binder solution, applying the dispersion onto the conductive surface of the substrate, drying the coat of the dispersion at a temperature in a range not lower than the boiling point of the solvent but below the softening point of the organic binder to form an X-ray sensitive layer, and heat-treating the X-ray sensitive layer at a temperature in a range not lower than the softening point of the organic binder but below the temperature at which the organic binder begins decomposing.
Abstract: A photoconductive layer comprises a support and an amorphous layer. The amorphous layer is photoconductive, comprises silicon as matrix and hydrogen and/or halogen, and has a layer region containing group III atoms which is distributed such that the distribution is continuous in the direction of layer thickness and said atoms are more enriched on the aforesaid support side than on the opposite side to the aforesaid support side in said layer.
Abstract: An electrophotographic photosensitive member is characterized by having a layer which contains at least one hydrazone compound represented by the following formula (1) or (2): ##STR1## wherein R.sub.11 represents substituted or unsubstituted naphthyl; R.sub.12 represents substituted or unsubstituted alkyl, substituted or unsubstituted aralkyl, or substituted or unsubstituted aryl; R.sub.13 represents hydrogen, alkyl, or alkoxy; R.sub.14 and R.sub.15 each represent substituted or unsubstituted alkyl, substituted or unsubstituted aralkyl, or substituted or unsubstituted aryl; n is 0 or 1; when n=1, R.sub.14 and R.sub.15, together with the nitrogen which links them, may complete a cyclic amino group; X represents a group necessary for completing a benzene ring or naphthalene ring; R.sub.21 and R.sub.22 each represent hydrogen, halogen, alkyl, alkoxy or disalkylamino; and R.sub.23, R.sub.24, R.sub.25, R.sub.26 and R.sub.
Abstract: A photoconductive element comprising elemental selenium dispersed in an insulating polymer is prepared by reducing an inorganic selenium compound in the presence of the insulating polymer. The invention also provide a process for preparing an electrophotosensitive material having a photoconductive layer in which reduction of the inorganic selenium compound is performed in a layer coated on a conductive support.