Abstract: A heating device used for a gas phase growing mechanism or a heat treatment mechanism comprising a tubular reactor made of a heat resistant and chemically inert material incorporating a support having a plurality of works set and arranged thereon to be put to gas phase growing or heat treatment, a cylindrical main heating furnace body disposed so as to surround the outer circumferential surface of the tubular reactor 1 at the entire length thereof, and a pair of auxiliary heating furnace bodies each closing both longitudinal opening ends of the cylindrical main heating body, whereby the cylindrical main heating furnace body and the pair of auxiliary heating furnace bodies constitute a heating furnace for confining the tubular reactor therein.

Abstract: A silicon/silicon carbide material which eliminates contamination by outgassing and direct contact is described as well as wafer processing pans made of this material and wafer processing methods using the silicon/silicon carbide material. An ultraclean silicon/silicon carbide material may be formed by first forming a Si/SiC part by prior art methods. The Si/SiC part then is subjected to a temperature sufficient to cause the impurities within the silicon carbide to either react and/or diffuse into the silicon fill. The contaminated silicon fill is then removed, either by high temperature evaporation or by a chemical etch. Clean silicon is then impregnated within the pore space of the silicon carbide pan. The part which results has ultraclean silicon and silicon carbide grains which have most, if not all, of the impurities removed from the surface of the grains. Thus, an ultraclean material results which will not outgas or directly contaminate silicon wafers.

Abstract: A semiconductor processor including an enclosure with an access opening. A door assembly is supported for translational movement between aligned and displaced positions relative to the access opening. The door assembly has a main part, and an extension part which telescopically moves toward and away from the access opening. A bellows is provided between the main and extension parts. The closed door is sealed by a first face seal and a second expandable seal. A liquids trap is provided to prevent outward escape of liquids from the access opening. A drain removes liquid collected in the trap.

Abstract: The temperature of articles in an "environmental" chamber is stabilized by evacuation of the "environmental" chamber, after having stabilized the temperature of such an article to approximate that of a controlled-temperature member spaced from the article by a small gap, to a pressure just sufficient to provide viscous gas behavior, adjusting the temperature of the article to closely match that of the member by gas conduction heat transfer across the gap, and evacuating the chamber to high vacuum.

Abstract: A single piece, high purity, full density semiconductor wafer holding fixture for holding a multiplicity of wafers and consisting essentially of chemical vapor deposited silicon carbide (CVD SiC). The wafer carrier is advantageous for the fabrication of electronic integrated circuits in a vertical furnace, where high temperatures and/or corrosive chemicals are present, where dimensional stability of the holder is advantageous to the process, and where introduction of contaminating elements is deleterious to the process. The method for making such an article comprises shaping a substrate, e.g.

Abstract: A method and an apparatus for heat treating in a heat treating apparatus having a heating chamber to be introduced with predetermined gas, a heater disposed around the heating chamber, and jigs disposed in the heating chamber for supporting wafers of a plurality of substrates to be treated in parallel with each other, wherein in order to make the temperature distribution of the wafers of the substrates to be treated in the radial direction uniform in the heat treatment, the jigs are formed to determine the sizes and the shape thereof in predetermined ranges having a gradient according to the heat treating method having a predetermined shape determining procedure so that the jigs are formed in ring-shaped trays (i.e. support-ring) for holding at the peripheries the substrates to be treated and the thickness of the tray is constant or such that the outer peripheral side thereof is thicker than the inner peripheral side thereof.

Abstract: The present invention relates to a thermal processing method wherein a cylindrical process tube that has at one end an entrance/exit is provided at the other end thereof with a heat source, and thermal processing is performed on a workpiece which has been brought in from the entrance/exit of the process tube to a prescribed position therein. This thermal processing method and an apparatus therefor is characterized in that, when the workpiece is moved to the prescribed position, it is first moved to a proximity position that is closer to the heat source than the prescribed position, then it is returned therefrom to the prescribed position.

Abstract: An exhaust system for use with a high temperature furnace used to perform oxidation and/or annealing operations of the type used in semiconductor fabrication. The exhaust system is designed to permit the furnace to be used with a controlled environment chamber surrounding the entry to the process chamber of the furnace. The exhaust system allows a relatively high velocity flow of exhaust gas from the process chamber through the exhaust system to occur when a positive pressure (e.g., annealing) operations are performed. Such high velocity flow prevents (a) backstreaming and (b) the accumulation of non-uniform concentrations of exhaust gases in the exhaust system, thereby permitting the accurate monitoring of the concentration of a selected gas in the exhaust system. Based on such monitoring, the opening of the door to the process chamber of the furnace may be prevented when the concentration of the selected gas exceeds a predetermined level.

Abstract: A heat-treatment apparatus comprises a heat-treatment section for subjecting a heat-treatment to a wafer and a loading section for loading a wafer boat into and unloading it from the heat-treatment section. The loading section is connected to the heat-treatment section and includes in it a movable support member, a drive mechanism and a vertical base board as well as a load-lock chamber for maintaining the inside in vacuum. The movable support member supports a wafer boat. The movable support member is attached to a vertical base board so that it can move up and down. The drive mechanism is attached on the major surface of the vertical base board opposite to the surface facing the wafer boat. The drive mechanism drives the movable support to move up and down. The heat-treatment apparatus further comprises a wafer transfer section that includes an orientation flat alignment mechanism and a buffer stage disposed near the orientation flat alignment mechanism.

Abstract: In a preferred embodiment of this invention as illustrated in the accompanying drawings in FIGS. 5 and 6, an annealing tray coil support pad 24 is formed of a woven cloth high temperature resistant fabric layer 26 and a similar bottom layer 28. The woven cloth is made of high tensile strength fibers. An intermediate layer 34 composed of a high density matted fiberboard insulative material of a thickness of between 0.75 inches and 3 inches is positioned between the top layer 26 and the bottom layer 28 for providing sufficient support to aluminum sheet coil 10 to minimize its peripheral deformation while the coil is being processed through one or more annealing furnaces. Pad 24 substantially reduces the amount of deformation and therefore the amount of waste material from each aluminum sheet coil 10.

Abstract: A pusher which pushes up semiconductor wafers has wafer fixing grooves to which they are fixed. Wafer detecting sensors which detect whether the semiconductor wafers are present are positioned in side walls of the wafer fixing grooves. The pusher is composed of an grounded aluminum base material and a resin coat formed on the base material. The surface of the aluminum base material is alumite-treated. The resin coat has a thickness of approximately 20 .mu.m. The resin coat is made of Teflon.

Abstract: A treatment system is disclosed, which has a treatment apparatus for performing a predetermined treatment for a planar workpiece contained in a carrier, and an first air-tight carrier storage chamber for storing the carrier. The treatment apparatus may also have an air-tight second carrier storage chamber. An inert gas supply and an exhaust means are connected to each of the treatment apparatus, the first carrier storage chamber, and the second carrier storage chamber. A valve device is provided for the inert gas supply and exhaust means.

Abstract: A movable cantilevered purge system providing for a wafer load position, a wafer purge position, and a wafer process position. The movable cantilevered purge system includes an elephant carrier vehicle for movement of a movable quartz elephant tube. The movable quartz elephant tube includes a purge injector and a return exhaust tube. A cantilevered paddle clamping vehicle moves behind the movable quartz elephant carrier vehicle and holds a silicon carbide or ceramic paddle. The elephant carrier vehicle includes a quartz sealing ring and a stainless steel sealing ring carried on pivotable adjusting blocks, and are supported by a plurality of cylindrical tubes. The quartz sealing ring concentrically positions about the process tube of the furnace and a metal ring positions about a scavenger face. The return exhaust tube connects back into the scavenger area of the furnace.

Abstract: An oxidation/diffusion processing apparatus includes a processing vessel, arranged such that a longitudinal direction is vertical, for storing a plurality of target objects to be processed, a heater arranged around the processing vessel, for heating the interior of the processing vessel, a process gas supply mechanism for supplying a process gas from the lower portion of the processing vessel into the processing vessel, and an exhaust mechanism for exhausting a processed exhaust gas from the upper portion of the processing vessel. The process gas is supplied to the target objects heated to a predetermined temperature by the heater to perform oxidation/diffusion processing to the target objects.

Abstract: A heat treatment apparatus for transferring a semiconductor wafer between a cassette and a boat and heat-treating a number of wafers loaded on the boat, comprising wafer holding assembly for supporting the wafer, and a plurality of posts for supporting the wafer holding assembly at predetermined intervals. The wafer holding assembly includes a ring member having an outside diameter larger than the diameter of the wafer and supported at a part of a peripheral portion thereof by the posts, and a plurality of supporting pieces provided onto the ring member, for supporting the wafer directly in contact with the wafer.

Abstract: A suction adhesion-type holder used, for example, in a bonding machine including an air cooling device provided between a bonding stage and a vacuum pump that creates a vacuum suction in the bonding stage through the cooling device. Air suction holes formed in the bonding stage, that has a heating element, are connected to the air cooling device via a pipe and air heated by the bonding stage is cooled in the air cooling device when the heated air flows in a spiral pipe installed inside the cooling device and then sucked into the vacuum pump. The spiral pipe is cooled by a fan.

Abstract: A door assembly for semiconductor processing equipment used to treat semiconductor substrates, wafers, photomasks, data disks, and other units. The door assembly is mounted to the front wall of a semiconductor processor enclosure having an access opening by means of a pair of guide rods and corresponding sliding bushings connected to the door which encircle the rods to allow movement of the door along the guide rods. A magnetic rodless piston mounted in an actuator bushing block which is magnetically coupled to an actuator bushing block moves the door assembly along the guide rods. The door assembly telescopically moves toward and away from the access opening to allow units to be installed into and removed from the enclosure, and to close the access opening. A window including an expandable seal is secured to an extension piece of the telescoping door assembly to seal between the door assembly and the access opening.

Abstract: Components for semiconductor diffusion furnaces are constructed of a high purity impervious silicon carbide or silicon nitride matrix deposited onto and within a pre-shaped fibrous matrix of silicon carbide or silicon nitride which contains sufficient nucleation aids to produce a structure having a density greater than about 85% of theoretical density. The impregnation of the matrix material into the fibrous reinforcement prevents undesired gaseous components from contaminating the atmosphere of the furnace, and the fibrous reinforcement provides strength combined with light weight.

Abstract: A heat treatment apparatus includes a process tube for heat treatment of an object to be heat treated, and a load lock chamber linked to the process tube and for housing the object to be heat treated and maintaining either a vacuum or maintaining an arbitrary inert gas atmosphere, and with the load lock chamber being provided with an elevator for raising the object to be heat treated on a loading mechanism and into the process tube, and a nozzle unit provided with a plural number of gas emission openings in an inner wall of the load lock chamber on a side opposing the elevator, and to uniformly emit gas to the object to be heat treated and which is on the loading mechanism. By such a configuration, it is possible to emit gas uniformly to the object for heat treatment and which is on the loading mechanism for the object for heat treatment.

Abstract: A tube furnace used for high-temperature processing of semiconductor wafers or the like employs features to improve the gas flow. One feature is reducing, or essentially eliminating, regions of gas recirculation in the outer annular region inherently present in a horizontal hot-wall atmospheric oxidation reactor equipped with a tubular cantilever for holding semiconductor wafers. The annular region is effectively isolated from the rest of the reactor by a solid circular quartz ring or barrier formed on the inner wall of the furnace tube, acting as a physical barrier against gas penetration inside the outer annulus.

Abstract: An electrically heated vacuum furnace has a plurality of heating elements (13) distributed in an array extending within the furnace. This allows accurate control of the application of radiant heat energy from the elements (13) of the array to articles (10) within the furnace. The elements (13) are preferably disposed spaced apart across the width of the furnace.

Abstract: A tube furnace used for high-temperature processing of semiconductor wafers or the like employs features to improve the gas flow. A primary feature of this invention is improving the plug flow characteristics of the furnace by preventing the undesirable elongation of the gas jet entering the reaction system through the injector nozzle. This elongated gas jet induces unwanted turbulence within the system and causes premature and incomplete mixing of reactant gases in the longitudinal direction. Improvement in plug flow characteristics is attained by use of a quartz baffle at the entrance region of the reactor located a distance from the gas inlet. The shape and location of the baffle are such that it acts as a physical barrier against the elongated gas jet and confines the turbulence in the initial fill chamber created by the entrance region of the reactor and the baffle.

Abstract: A vertical type of heat-treating apparatus is provided with a housing that has an opening portion for the carrying in of an object to be processed to the front surface, a heat-treating furnace for performing the required heat-treatment to the object to be processed and which is provided inside the housing, a standby space for the standby of the objects to be processed and carried into the heat-treating apparatus which is provided underneath the heat-treating furnace, a cleaning air introduction opening provided to a lower portion of the housing, a feed path separated from the standby space and connected to the cleaning air introduction opening, a recirculation path which makes one portion of cleaning gas passed the standby space to flow once again to the standby space, and an air exhaust opening for the exhaust to outside the housing of cleaning air which passes through the standby space.

Abstract: A vertical heat treatment apparatus includes a casing, a vertical heat treatment furnace provided in the casing, a substrate holding unit mounted in the casing for holding substrates to be heat-treated in the vertical heat treatment furnace, a loading/unloading unit having a wafer boat for supporting the substrates, the loading/unloading unit being adapted to put the substrates in and take the same out of the vertical heat treatment furnace, and a transportation robot for moving the substrates between the substrate holding unit and the wafer boat. The vertical heat treatment apparatus further includes a clean air supplying unit for supplying clean air sideways to the wafers supported by the wafer boat when the loading/unloading unit is at an unloading position, a and duct for introducing air from the outside of the apparatus. The clean air supplying unit is provided with an air filter disposed opposed to the wafer boat.

Abstract: An improved apparatus is described for the closure of the open end of a conventional tube furnace used in the treatment of semiconductor devices manufactured in the integrated circuit industry. The apparatus consists primarily of an adjustable fixed weight on one end of a lever arm and a roller bearing means on the other end, said lever arm being supported by a fulcrum structure which is adjustably attached to the movable track which transports the semiconductor devices into and out of the furnace. The roller bearing end of the lever arm rests with constant pressure against the rear face of the furnace door when the door is closed and held against the opening in the tube furnace. The design eliminates the need for springs and is insensitive to the environment.

Abstract: Disclosed is a baffle apparatus for insertion into a semiconductor wafer processing furnace to diffuse processing gases that are injected into the furnace by an injector nozzle. The baffle apparatus comprises:a diffuser plate assembly having an upper end and a lower end, the diffuser plate assembly having at least one diffuser plate against which injected gases are to be forced; andthe lower end of the diffuser plate assembly being sized and shaped to engage with and be supported by an elongated wafer paddle.

Abstract: An apparatus and method for processing a workpiece in an ambient-free, atmosphere of selected gas. A preparation vessel has an opening for entry of the workpiece and a diffuser oriented to emit across the vessel opening a laminar curtain flow of the selected gas which enters, purges the vessel and prevents the infiltration of air. The workpiece on its carrier is transported into the preparation vessel where air is purged out and replaced with selected gas. A processing vessel has a similar workpiece entry opening and diffuser. The preparation vessel and the processing openings are brought into coincidence, and the carrier is transported into the processing vessel for processing of the workpiece in the atmosphere of selected gas provided by the processing vessel diffuser.

Abstract: Wafer processing furnace apparatus for providing adjustability for a door sealed to the furnace, the furnace being of the type having a door through which a wafer paddle is disposed. An alignment collar is disposed in the furnace door and having a bore through which the wafer paddle passes. The bore is offset so that when the collar is rotated, the door is moved in a plane perpendicular to the paddle axis. The door includes a seal assembly, including a bellows that is sealed with an O-ring at one end of the door, and sealed with an O-ring at another end to an alignment plate which also has an offset bore. The alignment plate and the bellows is rotated in correspondence with the alignment collar when adjusting the door to prevent tilting thereof. The alignment plate is fastened to an attachment plate which is fixed to the wafer paddle.

Abstract: A heat processing apparatus of the vertical type includes a box which has a process tube in the upper half thereof and a space in the lower half thereof. A cap for the process tube can be moved up and down between an upper position where the cap closes the process tube while holding a wafer boat on it and a lower position in the space where it opens the process tube. Clean air is supplied into the space through a dust removing filter located on one side of the space and exhausted from the space through the other side of the space. The air thus exhausted is collected by a gas processing system, which serves to remove harmful components from the air thus collected. A scavenger is arranged enclosing the open bottom of the process tube. Gas remaining in the process tube after the heat process is sucked by the scavenger and collected by another gas processing system.

Abstract: A heat processing apparatus comprises a heating furnace, a process tube located in the heating furnace and having an open bottom, a manifold connected to the open bottom of the process tube, a sealing member sandwiched between the process tube and the manifold to air-tightly seal the process tube, a fixing member for fixing the process tube to the manifold, a heat transmitting member made of metal and sandwiched between the fixing member and the process tube to radiate heat at that area of the process tube, which is opposed to the fixing member, to the fixing member by heat conduction, and a heat exchange conduit arranged in the fixing member and having a passage through which heat exchanging medium flows to cool the fixing member by heat exchange.

Abstract: An apparatus for supporting a workpiece has an enclosure, a means for reducing the pressure and a platen on which the workpiece is mounted. A heating mechanism is located within the platen and the platen is coated with a high emissivity material, which facilitates the radiative heat transfer between the platen and the workpiece. Consequently, the workpiece can be rapidly raised to a specific temperature. This apparatus is particularly applicable to the supporting of a semiconductor wafer within a vacuum system.

Abstract: A controlled diffusion environment capsule system (10) is used with a conventional tubular high temperature furnace (12) as employed in semiconductor manufacturing. The system (10) includes a cantilever boat loading apparatus (14) and a quartz diffusion capsule (16). Wafer carriers (20) support semiconductor wafers (22) concentrically with capsule (16) in closely spaced relationship for processing in the furnace (12). The diffusion capsule (16) is supported on a pair of quartz rods (24). A quartz injector tube (28) extends the length of the diffusion capsule (16). The injector tube (28) has three rows of high aspect-ratio apertures (30) extending along its length to disperse nitrogen or other inert gas uniformly across the sufaces (32) of the wafers (22).

Abstract: An impurity furnace is disclosed, which includes: an atmoscan tube 1, a gas inlet 20, a processor tube 2, a door flange 60 and a discharge tube 70.A pressure gage 80 is installed at a side of the door flange 60, for measuring the internal pressure of the atmoscan tube 1 and transmitting the measured value thereof in the form of electrical signals. A microcomputer 3 connected to pressure gage compares the measured value of the pressure gage with a preset reference value, and generates control signals in order to control the opening degree of a butterfly valve 90. The butterfly valve is connected to the microcomputer 3, the opening degree thereof being controlled by the value controlling the signals from the microcomputer 3. The discharge tube extends from the interior of the atmoscan tube to the butterfly valve.

Abstract: A reactor (100) is provided which comprises an enclosure (1,2,3) which has along its longitudinal axis (4--4') a hot zone (1), a cold zone (2) and between the hot and the cold zone an intermediate zone (3) and which has at least one gas inlet tube (12,32). The reactor further comprises a heat-insulating plug (30) for being positioned in the intermediate zone (3) to prevent a gas-flow from the hot zone (1) to the cold zone (2) of the enclosure (1,2,3) and coupling means (13,102;33,36) for transmitting gas from the gas inlet tube (12;32) into the hot zone (1). The use of the heat insulating plug (30) prevents deposition of unwanted material on the walls of the cold zone (2) of the reactor.

Abstract: A polyhedronal post terminal defining at least one polygonally-shaped cavity passing therethrough. The post terminal also defines at least one hole passing through one of the post terminal's outside wall surfaces, but does not pass through the post terminal outside wall surface which is aligned with and opposes the post terminal outside wall surface having the hole defined therein. The post terminal has at least one ledge portion protruding outwardly from its side wall surface.In one embodiment, the post terminal has a hook portion extending upwardly from its ledge portion. The hook portion is angularly oriented to the ledge portion's upper surface, and is laterally spaced from the terminal's side wall surface such that a channel is defined therebetween.In another embodiment, the post terminal has a claw portion extending downwardly from its ledge portion.

Abstract: A vertical heat-treating apparatus which allows effective use of an installation space and improved productivity is disclosed. In this system, a plurality of housings, each accommodated with a vertical reactor, are aligned with each other. A gas feed unit and the like are arranged in front of each housing with a space disposed therebetween for conducting maintenance work. A rail is installed along the rear side of the housings. A boat liner is located on the rail for carrying a boat to the housings. An interface mechanism including a horizontal-vertical conversion handling unit for supplying the boat in a vertical state to the boat liner is disposed near the rail.

Abstract: Disclosed is a baffle apparatus for insertion into a semiconductor wafer processing furnace to diffuse processing gases that are injected into the furnace by an injector nozzle. The baffle apparatus comprises: a diffuser plate assembly having an upper end and a lower end, the diffuser plate assembly having at least one diffuser plate against which injected gases are to be forced; and the lower end of the diffuser plate assembly being sized and shaped to engage with and be supported by an elongated wafer paddle.

Abstract: A thermal treating apparatus includes a reaction tube having an opening end and storing an object to be treated, an annular manifold arranged at the opening end and having an inlet for supplying a gas to the reaction tube and an outlet for exhausting the gas from the reaction tube, and a cover arranged on the opening end of the manifold. The surfaces of the annular manifold and the cover exposed to the inside of the reaction tube are covered by a material which is not corroded by the gas supplied to the reaction tube.

Abstract: Mixing of spent reactant gases with ambient air inside a semiconductor wafer fabrication facility is avoided and consequently corrosion of a scavenger box in a wafer fabrication facility is avoided. Repeatability of reaction gas results on wafers in a process tube is improved by maintaining precisely constant pressure in the wafer processing tube, which is operated close to ambient atmospheric pressure. This is accomplished by positioning an exhaust tube downstream from the wafers in the processing tube at a location that results in a uniform, repeatable reaction gas flow pattern between the wafers. Pressures at or near that point are measured by a differential manometer referenced to ambient atmospheric pressure to produce a pressure-indicating signal. The pressure indicating signal is electronically compared with a preset constant signal representative of the desired constant pressure at the pressure measurement point to produce an error signal.

Abstract: A device for holding at least one long shaped product made of ceramics during its drying, including an assembly having at least one straight elongated cavity in which the product to be dried can be held along its entire length. The cavity is open at both ends and surrounds the whole periphery of the product, and has a clearance between the assembly wall and the whole periphery of the product except the portion where both are contacting each other.

Abstract: A workpiece support for supporting a disc-shaped workpiece in a vacuum chamber, comprises a support member with a support surface for carrying the workpiece. A plurality of bores extend from the support surface and through the support member. The bores communicate with a distribution chamber defined on a side of the support member which is opposite from the support surface. The distribution chamber is substantially co-extensive with the support surface and is connected to a gas feed line for supplying gas to the distribution chamber. The bores each have respective diameters which are substantially shorter than their respective lengths through the support member. In this way, gas supplied through the bores from the distribution chamber is distributed between the support surface and the workpiece as a heat transfer medium which is substantially independent from the gas flow at an inlet of each bore in the distribution chamber.

Abstract: A semiconductor wafer-processing apparatus has a plurality of support members provided respectively for the processing units of a processing apparatus, and designed for supporting wafer receptacles each containing semiconductor wafers, and receptacle-inserting/extracting mechanism for inserting a wafer receptacle from the support members into the processing units, and for extracting the wafer receptacle from the processing units back to the support members. Receptacle-transporting mechanism is provided, operated independently of the receptacle inserting/extracting mechanism, for transporting the wafer receptacle between each support member and a predetermined position.

Abstract: A jig for holding a plurality of disc brake pads during curing of the pads after the heat forming thereof, including, a frame, a pair of hanger shafts, a front support plate, a rear support plate, and a drive mechanism. The frame has a front plate and a rear plate. The hanger shafts extend from the front plate to the rear plate. The front support plate and the rear support plate are slidably fitted on the hanger shafts so that both support plates can be guided by the hanger shafts. Springs are provided between the rear plate and the rear support plate. The drive mechanism includes a gear and a bolt. The gear has teeth on its outside circumferential surface and is rotatably supported by the front plate. When the gear is rotated, the front support plate is pushed toward the rear plate by the bolt, and the pads are interposed in a compressed state between both of the support plates after the heat forming.

Abstract: A tube furnace used for high-temperature processing of semiconductor wafers or the like employs a cone-like shape for the gas inlet or nozzle where the reactant or insert gas enters the furnace tube. This conical nozzle produces a gas flow of faster velocities, following the flow streamlines, and avoids or minimizes recirculating gas cells. The amount of gas used in purging a tube with this configuration is reduced, and the time needed for thorough purging is also reduced. Greater process control, and enhanced process reproducibility, are also possible because of the reduction in overlap of process steps permitted by the faster purging. This feature of faster purging can, in addition, reduce the infiltration of ambient air which occurs during any processing step.

Abstract: A cage boat having easily replaceable parts utilizes removable spacer rails for holding semiconductor wafers contained within a cage formed from slats removably attached to end pieces perpendicular to the slats.

Abstract: An apparatus is described for processing semiconductor wafers for the construction of integrated circuit structures thereon wherein a semiconductor wafer is supported on the upper surface of a uniformly heated susceptor. The apparatus comprises a chamber, a circular susceptor in the chamber for supporting a semiconductor wafer thereon, heating means in the chamber beneath the susceptor, and support means for peripherally supporting the susceptor in the chamber comprising 3-6 spokes which are each connected at one end to a central hub which is coaxial with the axis of the circular susceptor, but spaced therefrom to permit even thermal distribution across the susceptor, and opposite ends of the spokes peripherally supporting the susceptor adjacent the end edges thereof, to permit uniform heating of the susceptor by the heating means and uniform thermal distribution of the heat through the susceptor.

Abstract: There is provided a heating furnace comprising a furnace body, a cylindrical zone heater in the furnace body, a muffle tube installed through the furnace body for thermally treating a porous preform made of high purity quartz glass by moving the preform vertically therethrough and a partition means in the portion of the muffle tube projecting above the furnace body to divide an interior space of the muffle tube into an upper space and a lower one.

Abstract: Disclosed is a semiconductor processing furnace flow restricting apparatus for insertion into a longitudinally elongated semiconductor wafer processing furnace to create back pressure to increase residence time of processing gases within the furnace. The apparatus comprises:at least two ring-like members, one of the ring-like members being concentrically mounted inside the other, the ring-like members each having a fore longitudinal end and an aft longitudinal end, the two ring-like members each having a varying diameter which tapers inwardly from the fore longitudinal end to the aft longitudinal end; anda lower mounting assembly having a male fitting cross sectional size and shape which is complementary to an upward female size and shape of the elongated wafer paddle, the male shape of the mounting assembly being supportable within the female shape of the wafer paddle to laterally position the two rings when the paddle and apparatus are received within a semiconductor wafer processing furnace.

Abstract: A wafer handling apparatus has a common desk including a top surface having a front zone, a middle zone and a rear zone, the front zone being capable of receiving plural indexers functioning as a wafer sender and/or receiver, a couple of wafer processing units disposed adjacent lateral sides of the middle zone, a wafer baking oven disposed adjacent a middle of the rear zone, and a wafer handling mechanism disposed adjacent a middle of the front zone, the wafer processing units and the oven.

Abstract: This invention is directed to the fabrication of semiconductor devices, especially those comprising III-V and II-VI compound semiconductor materials, and involves Rapid Thermal Annealing (RTA) of semiconductor wafers, especially those implanted with a dopant(s). The invention is also concerned with a black-box implement used in combination with the RTA. The process includes enclosing a wafer to be annealed within a "black-box" comprising components of a black body material and subjecting the black box with the wafer therein to an RTA.