Abstract: Disclosed is an apparatus that suppresses changes in a temperature distribution in a wafer caused by changes in the light transmittance of a process tube of a lamp annealing furnace. A transmission type sensor including a light emitting section and a light receiving section is arranged so that a process tube is sandwiched between the light emitting section and the light receiving section. The transmission type sensor measures the light transmittance of the process tube, so that it becomes possible to determine when the process tube needs changing. Also, by using a plurality of transmission type sensors and performing feedback control of power of lamps according to measurement results of the transmission type sensors, it becomes possible to suppress changes in the temperature distribution in a wafer.

Abstract: An apparatus and method to position a wafer onto a wafer holder and to maintain a uniform wafer temperature is disclosed. The wafer holder or susceptor comprises a recess or pocket whose surface is concave and includes a grid containing a plurality of grid grooves separating protrusions. The concavity and grid grooves define an enclosed flow volume between a supported wafer and the susceptor surface, as well as an escape area, or total cross-sectional area of the grid grooves opening out from under the periphery of the wafer. These are chosen to reduce the wafer slide and curl during wafer drop-off and wafer stick during wafer pick-up, while improving thermal uniformity and reducing particle problems. In another embodiment, centering locators in the form of thin, radially placed protrusions are provided around the edge of the susceptor pocket to reduce further the possibility of contact between the wafer and the outer edge of the susceptor.

Abstract: An optical fiber preform suspending and supporting apparatus able to prevent deformation of a pin placed in a high temperature environment and able to support a porous optical fiber preform without adversely influencing supports of the pin and without causing inclination relative to the vertical line of a main shaft, wherein a movable connector is fitted into an enlarged-diameter portion of the lower end of a main shaft, this enlarged-diameter portion is connected with the movable connector by a pin so that the movable connector is able to swing around the pin, a holding portion including a supporting portion is formed integrally at the bottom of the movable connector to hold an enlarged-diameter portion of the upper end of a starting preform, and the diameter of the pin is in the range of 20% to 50% of the outside diameter of the enlarged-diameter portion of the lower end of the main shaft, and an optical fiber processing apparatus including the same.

Abstract: An assembly of heating furnace and semiconductor wafer-holding jig. This assembly includes a furnace body made of refractory or heat insulting material; a heater disposed around the inner side surface of the furnace body; a reaction chamber which forms a uniform heating zone; and a wafer-holding jig. The wafer-holding jig is capable of holding the wafer and advancing and retracting the wafer in the uniform heating region along the longitudinal direction of the furnace body. The front surface of the semiconductor wafer to be heat-treated is substantially in parallel with the surface of the heater. The assembly of the invention can be used in rapid thermal processing and the footprint of the heating furnace can be reduced.

Abstract: A spacer member in a furnace including an aluminum tube containing a ceramic material. The ceramic material provides high compressive strength and the composite product resists high temperature creep.

Abstract: A good heat treatment of metal coils (31, 32) is obtained by means of gaseous hot media, whereby said metal coils are successively wound with support frames (10) between them. According to the invention, a low-cost robust support frame (10) may be obtained, whereby an I-profile is used as frame profile (28), so construct a frame, which then forms the support frame (10). The I-profile web has rows of holes (24), to serve as a guide for the medium.

Abstract: An apparatus treating substrates in a high-temperature and high-pressure atmosphere, the substrates being treated in a batch that includes one lot of the substrates treated as a unit. A supporting jig is provided with means to support a plurality of the substrates in a shelved arrangement, the supporting jig and substrates being configured to enter and exit from a treating chamber within a pressure vessel as a single unit. The supporting jig is surrounded by a casing. In order to cope with the difficulty of oxidization of the substrates, an oxygen getter is disposed in either the supporting jig or in the casing. The pressure vessel includes an opening whereby a reducing gas can be introduced into the treating chamber. Further, the pressure vessel and a stocking portion of the substrates are installed within a housing such that contamination is further reduced and control is made easier.

Abstract: A container (10) for holding parts during a heat treating process. The container includes a bottom plate (14), end walls (20 and 22), sidewalls (30 and 32) and dividers (40, 42 and 44) which are connected together using a tab and slot construction to form an egg crate structure. The construction of the container reduces the effects of the heat treating process on the container. The guide cradle (58) in the compartment (12) of the container supports the cylinder head in the compartment and reduces the movement of the cylinder head during the heat treating process. The positioners (60) on the top portion (58A) of the guide cradle guides the cylinder head into the guide cradle and into the compartment. The bottom portion (58B) of the guide cradle supports the cylinder head above the bottom plate.

Abstract: A heating apparatus comprises a central hot plate for heating the center portion of a substrate, a plurality of segment hot plates for heating the peripheral portion of the substrate, a hot plate support member supporting the central hot plate and the segment hot plates, support pins for supporting the substrate so as to face the central hot plate and the segment hot plates in a close proximity without being in contact with the central hot plate and the segment hot plates, and a power supply for supplying electricity to the central hot plate and the segment hot plates.

Abstract: An auxiliary heat-insulating jig is provided between a wafer boat and a heat-insulating jig. The auxiliary heat-insulating jig comprises a plurality of vertically arranged plate insulators. The plate insulators are made of opaque quartz. Thus, an auxiliary heat-insulating jig necessary for modifying a high-speed temperature-control heat treatment apparatus of an intermediate temperature specification to a high-speed temperature-control heat treatment apparatus of a high-temperature specification is provided.

Abstract: An apparatus for baking a wafer includes a heating plate for supporting the wafer to be baked, a lifting device for loading and unloading the wafer onto and from the upper surface of the heating plate, and a detector for detecting whether the wafer loaded by the lifting device onto the upper surface of the heating plate extends parallel to the upper surface, i.e., is situated correctly on the heating plate. The detector includes proximity sensors and a controller. The proximity sensors are disposed in or on the heating plate for sensing respective distances from the positions thereof to the wafer and generating signals indicative of whether the wafer is disposed more than a predetermined distance away from the sensors. The controller determines, on the basis of the signals generated by the proximity sensors, whether the baking process should be carried out and controls the baking process once it is initiated.

Abstract: A method of treating a surface of a stacked aluminum alloy ingot during a heating process. Spacer blocks are positioned adjacent aluminum alloy ingots to form a stack, wherein the spacer block has a support surface contacting a contact surface of the aluminum alloy ingot, and at least one of the support surface and the contact surface include a fluorine containing material. The stack is heated to at least a temperature at which the fluorine containing material decomposes or vaporizes such that a layer of a fluorinated oxide compound is formed at the interfaces between the ingots and the spacer blocks.

Abstract: A system and method for improved throughput of semiconductor wafer processing. In one aspect, a wafer carrier is provided having a flat zone capable of holding an additional lot of wafers for processing. In addition, a multiple fork wafer transfer mechanism is provided having a plurality of wafer forks for loading and unloading wafers in the wafer carrier at a reduced fork pitch.

Abstract: A heater for heating a substrate in a supercritical fluid reactor includes a heater body having a heater chamber initially open to the interior of the reactor. The heater chamber is sized to match the substrate and includes a seal around its perimeter that seals against the perimeter of the substrate and forms a closed heater chamber with the backside of the substrate. A heating element, insulated from the heater body, preferably with pyrolytic graphite, is located in the heater chamber to heat the substrate from the backside. A clamp ring with a seal around its inner perimeter cooperates with the heater body to seal the substrate to the heater body. The heater is preferably spaced apart from the substrate, as well as the walls of the eater chamber and the insulator, to provide uniform heating by transferring heat through the supercritical fluid.

Abstract: A quartz window can withstand a pressure difference between an atmospheric pressure and a negative pressure environment created in a thermal processing apparatus that applies a thermal process to a target object under the negative pressure environment. The quartz window is adapted to be positioned between a radiation heat source and an object to be subjected to a heat treatment in the process chamber. The quartz window has a plate made of quartz and a plurality of ribs formed on the plate so as to reinforce the plate.

Abstract: An apparatus is provided wherein a substrate is mechanically clamped to a heater block of a die bonder to hold down the heated substrate before and during the die bonding operation, thereby preventing warpage of the substrate. Embodiments include a clamp comprising a plurality of spring-loaded rollers which push down opposing outer edges of the substrate onto the heater block while the substrate is being heated and die bonded. The clamp minimizes warpage of the substrate by pushing the substrate flat onto the heater block, and allows the substrate to be moved into and away from the die bonding area.

Abstract: Disclosed is an apparatus that suppresses changes in a temperature distribution in a wafer caused by changes in the light transmittance of a process tube of a lamp annealing furnace. A transmission type sensor including a light emitting section and a light receiving section is arranged so that a process tube is sandwiched between the light emitting section and the light receiving section. The transmission type sensor measures the light transmittance of the process tube, so that it becomes possible to determine when the process tube needs changing. Also, by using a plurality of transmission type sensors and performing feedback control of power of lamps according to measurement results of the transmission type sensors, it becomes possible to suppress changes in the temperature distribution in a wafer.

Abstract: An apparatus for baking a wafer includes a heating plate for supporting the wafer to be baked, a lifting device for loading and unloading the wafer onto and from the upper surface of the heating plate, and a detector for detecting whether the wafer loaded by the lifting device onto the upper surface of the heating plate extends parallel to the upper surface, i.e., is situated correctly on the heating plate. The detector includes proximity sensors and a controller. The proximity sensors are disposed in or on the heating plate for sensing respective distances from the positions thereof to the wafer and generating signals indicative of whether the wafer is disposed more than a predetermined distance away from the sensors. The controller determines, on the basis of the signals generated by the proximity sensors, whether the baking process should be carried out and controls the baking process once it is initiated.

Abstract: A semiconductor wafer boat has a plurality of discrete boat parts stacked one atop the other. Each of the of the boat parts includes a wafer support in the form of a plurality of columns each having a plurality of vertically spaced apart grooves for use in supporting semiconductor wafers as vertically spaced from one another. Corresponding ones of the grooves in the columns of a boat part can receive the outer peripheral edge of the wafer directly, or a ring plate to which the wafer is mounted. Each adjacent pair of boat parts has confronting end portions forming a joint at which the boat parts of the pair are freely coupled to one another such that each of the boat parts may be replaced independently of the other boat parts. Thus, when any of the boat parts experiences thermal deformation after long periods of use, the boat part may be readily replaced without damaging any part of the boat and without the costs associated with replacing the boat entirely.

Abstract: An opening and closing apparatus (52, 54) opens and closes an opening and closing lid (10) which closes an opening part (4) of an accommodating box (2) for accommodating an object (W) to be processed and is locked by a locking mechanism (12). A key member (26) is mounted to a base table (90) via a bearing mechanism (92) in a state in which the key member is rotatable with respect to the base table (90) and movable in a vertical direction with respect to a front surface of the base table (90). A part of the opening and closing lid (10) is held by being put between the key member (26) and an elastic member (98) provided on a front surface of the base table. Thereby, the opening and closing lid (10) is prevented from being displaced with respect to the base table (90) when the opening and closing lid (10) is removed from the accommodation box (2).

Abstract: The method of the present invention is capable of adhering a wafer to a prescribed position of the carrier plate, which has been correctly positioned, in a short time. The method comprises the steps of: heating a carrier plate; detecting a mark provided to a predetermined position of the carrier plate rotating at predetermined rotational speed; positioning the carrier plate on the basis of a position of the detected mark; conveying the carrier plate to a wafer adhering section with keeping a posture of the carrier plate which has been positioned in the positioning step; and adhering the wafer at a prescribed position of the carrier plate.

Abstract: Embodiments of the invention generally provide an apparatus and a method for providing a uniform thermal profile to a plurality of substrates during heat processing. In one embodiment, a cassette containing one or more heated substrate supports is moveably disposed within a heating chamber having an about uniform thermal profile therein to more uniformly heat the substrates.

Abstract: Target processing temperatures for a wafer and offset values are tabulated and stored in a temperature controller in advance. When a target processing temperature is changed, a hot plate temperature corresponding to the target processing temperature for the wafer is calculated based on the offset value in the table. Based on the calculated value, a heater controller controls a heater to change the hot plate temperature. Thereby, in a substrate heat processing apparatus for performing heat processing at different temperatures, an offset value corresponding to each temperature is automatically changed, whereby the substrate can be heated at an appropriate temperature.

Abstract: A heat-treating apparatus is arranged to perform a reforming process and a crystallizing process for tantalum oxide deposited on a semiconductor wafer. The apparatus includes a worktable with a heater incorporated therein. Under the worktable, there is a heat-compensating member formed of a thin plate and having a counter surface facing the bottom surface of the worktable along the periphery. The counter surface is formed of a mirror surface having a surface roughness of Rmax=25 &mgr;m or less. Heat rays and radiant heat are reflected by the counter surface and applied to the periphery of the worktable, thereby compensating the periphery for heat loss.

Abstract: To provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on its surface and acting to set the temperature of the substrate. A chuck mechanism is provided to fix the substrate in contact with a plurality of the projections by chucking the substrate toward the temperature control plate.

Abstract: A wafer treatment apparatus includes a wafer heating device having a wafer-load region at an upper portion, a shower head opposing the wafer-load region for ejecting/directing a source gas toward the wafer surface, and a reflecting apparatus positioned between the shower head and the heating device for reflecting thermal energy radiated from the heating device back toward the wafer-load region. The reflecting apparatus includes a reflector positioned above and opposing the wafer-load region, and a supporter for supporting the reflector. The reflector may have a flattened reflecting surface facing toward the wafer-load region, or may be a semi-spherical type reflector having a concave mirror facing toward the wafer-load region. The reflector can be controlled to move vertically relative to the wafer.

Abstract: The present invention is an apparatus for operating heat processing to a substrate, and comprises a heating plate to mount and heat the substrate thereon, a supporting member to support a lower surface of a periphery of the heating plate, and a supporter to support the supporting member. The supporting member has a stepped portion to surround an outer peripheral surface of the heating plate. The supporting member is fixed to the supporter by a fixing member penetrating through the stepped portion in a vertical direction. The fixing member is provided between an inner peripheral surface of the stepped portion and the outer peripheral surface of the heating plate.

Abstract: A jig comprises: a main body; a retainer for retaining a block in which at least one row of sections to be sliders is aligned; a middle load application section coupled to a portion of the retainer located in the middle of the length thereof; end load application sections coupled to portions of the retainer near ends of the length thereof; middle couplers located between the middle load application section and each of the end load application sections, respectively, for coupling the main body to the retainer; and end couplers for coupling the main body to the ends of the length of the retainer. The length between the middle of the retainer and each of the ends thereof is greater than the length between the middle of the retainer and each of the end load application sections.

Abstract: An apparatus for semiconductor processing includes: a) at least one support member comprising an upper surface for supporting a semiconductor wafer; b) a component through which the support member extends, the component comprising a front surface and a back surface, at least one of the support member and the component being movable relative to the other of the support member and the component such that the support member can support a wafer in an elevated position above the front surface and can be withdrawn into the component to lower the wafer relative to the front surface of the component; and c) a block joined to the support member below the component back surface, the block engaging the component back surface when the support member upper surface extends above the component to a predetermined distance, the block preventing the support member upper surface from extending beyond the front surface by more than the predetermined distance.

Abstract: Boat comprising a number of vertically extending rods for the accepting therein of shield rings. Each shield ring is provided with a number of projections or other carrying means for accepting a wafer. The ‘thickness’ of the shield rings in the radial direction is not constant according to the invention and is smaller close to one of the rods than in the area between two rods.

Abstract: A substrate support, such as an edge ring, includes an inner portion, and an outer portion contiguous with the inner portion and extending radially outward therefrom. The inner portion has a raised annular extension forming a ridge for supporting a substrate.

Abstract: A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism. The heating mechanism preferably comprises a heated substrate support adapted to support a substrate and to heat the supported substrate to a predetermined temperature, and the cooling mechanism preferably comprises a cooling plate. The transfer mechanism may comprise, for example, a wafer lift hoop having a plurality of fingers adapted to support a substrate, or a plurality of wafer lift pins. A dry gas source may be coupled to the chamber and adapted to supply a dry gas thereto.

Abstract: A novel apparatus and method of making the apparatus for supporting a substrate during processing. A base defining grooves at a substrate support location is described. Grooves are provided to catch wear particles from the substrate caused by friction during relative movement between the substrate and the support. A plurality of substrate support locations can be provided on the base surface. The base surface preferably comprises an annulus with substrate support locations spaced circumferentially around the annulus. Protrusions may be provided at substrate support locations. The protrusions define contact surfaces on which grooves can be formed.

Abstract: This invention is a high strength, thermal shock resistant, high purity siliconized silicon carbide material made from siliconizing a converted graphite SiC body having at least 71 vol % silicon carbide therein.

Abstract: In a vertical thermal treatment apparatus wherein a plurality of semiconductor wafers are held in multiple layers within a wafer boat, the wafer boat is mounted onto a turntable at the upper end of a rotational shaft that penetrates from a bottom portion through a shaft hole into a vertical reaction vessel, and the wafers are subjected to a thermal treatment while the wafer boat is rotated; a seal is formed between the rotational shaft and the penetration portion, to restrain the intrusion of gases and moisture into the seal portions from the interior of the reaction vessel and to eliminate adverse effects on the seal materials. The space within a gap between a shaft hole 33 and a rotational shaft 4 communicates with a space between a fixing member 34 and an outer shell member 44, and a magnetic seal portion 7 is provided between this fixing member 34 and the outer shell member 44.

Abstract: A substrate heater having a chamber, a heating element located in the chamber, and an elevator having a substrate holder. The holder can hold a plurality of planar substrates in a general spaced stacked configuration. The holder can be moved to allow substrates to be inserted and removed from various locations on the holder. In one embodiment the substrates are located very close to each other to accelerate the rate of heat transfer to newly inserted substrates. In another embodiment, the holder has an individual horizontal heater on the elevator for each substrate.

Abstract: A clamp holds a semiconductor wafer during an Al reflow process. The clamp is made of a ceramic material, and thereby clamp surface roughening which damages semiconductor wafers and other damaging of the wafer caused by the deformation of the clamp are avoided. A sloped surface of the clamp pad can also reduce the damage on the wafer by reducing the contact area between the clamp pad and the wafer. In addition, the clamp has several features that can reduce heat dissipation from the wafer to outside during the Al reflow. Slots formed on the pad reduce the amount of heat conduction through the clamp, and the polished inner surface of the clamp cap reflects the heat radiated from the wafer back to the wafer.

Abstract: Diffusion bonding techniques are extended to the simultaneous bonding of an array of multilevel piece parts. The problems of uneven expansion and contraction of different levels of different piece parts in the array are obviated by positioning each level of the array within a frame. The stack of frames is pinned in one corner. The opposite corner of the array has a slot at a 45° angle with respect to the x and y axes of the array. The slot engages a pin and allows the entire array to expand and contract along the slot in a manner to maintain the registration of features between respective levels of each piece part.

Abstract: A kiln tool uses a fiber-composite material comprising a yarn aggregate in which yarn including at least a bundle of carbon fibers and a carbon component other than carbon fibers is three-dimensionally combined and integrally formed so as not to separate from each other; and a matrix made of Si--SiC-based fiber filled between the yarn adjacent to each other within the yarn aggregate. The kiln tool has good workability and working accuracy, and excellent durability.

Abstract: This invention relates to a corrosion-resistant member having a resistance to plasma of a halogen based corrosive gas, which comprises a main body and a corrosion-resistant layer formed on a surface of the main body and containing a fluoride of at least one element selected from the group consisting of rare earth elements and alkaline earth elements.

Abstract: Pins that are small protrusions are disposed on the upper surface of a heat process board. Through-holes are formed between the pins so as to deaerate from a space thereof. In a predetermined time period in the initial stage of the heat process, a deaerating process is performed using the through-holes. Thus, a negative pressure is applied to the space between the lower surface of the substrate and the upper surface of the heat process board so as to contact the substrate and the heat process board. Thereafter, the vacuum degree is lowered. Due to the rigidity of the substrate, the substrate and the heat process board are separated. In the initial stage of the heat process, since the substrate and the heat process board directly contact, the temperature of the substrate quickly and equally rises. In addition, when the heat shrinkage is large, since the substrate and the heat process board are separated, static electricity due to friction hardly takes place. Thus, a static breakdown can be prevented.

Abstract: The present invention provides a brazing fixture and method of using the fixture which allows the brazing of a joint in an oxide-dispersion-strengthened (ODS) high temperature alloy workpiece where stresses in the workpiece operate to open the joint during the brazing process. The fixture is formed from the same ODS alloy as the workpiece, such that the fixture exhibits the same coefficient of thermal expansion as the workpiece. This allows maximization of surface area contact between the fixture and the workpiece during the brazing operation in order to force the workpiece to maintain its design dimensions and to prevent the joint from opening. The fixture includes a cavity preventing fixture/workpiece contact in the area of the braze to help control thermal lag in the area of the joint.

Abstract: The invention concerns a resistance-heated vaporizer boat for vaporizing metal. According to the invention, a reduced temperature is generated in the edge region, i.e., along the longitudinal edge of the vaporizer boat, such that there is only a very slight wetting tendency along this longitudinal edge. Consequently, the melt can be localized such that it cannot overflow over the longitudinal edges of the vaporizer boat, without a cavity necessarily having to be provided in the vaporization surface of the vaporizer boat. As a result, optimum wetting and constantly targeted vaporization of the metal upwards towards the area to be vapor-deposited are attained.

Abstract: A drafting apparatus in a furnace. A buffer board having a plurality of gas intakes is disposed in a front end of the drafting apparatus. A laminar flow board having a plurality of gas outtakes is disposed in a rear end of the drafting apparatus. A drafting region is enclosed by the drafting apparatus. The drafting region comprises at least one drafting board to draft and redirect the gas flow. A laminar flow is then obtained to flow through the outtakes on the laminar board.

Abstract: A boat for semiconductor wafers includes first, second and third support rods arranged between and connected to top and bottom plates. The first, second and third support rods include a plurality of first racks, a plurality of second racks, and a plurality of third racks, respectively, such that the racks of each rods are vertically arrayed with gaps therebetween. The first, second and third racks serving to define a plurality of horizontal wafer supporting levels. Each wafer supporting level is defined by only combination of the first, second and third racks of the corresponding height. In each wafer supporting level, the first and second racks are arranged substantially in symmetry with respect to an axis passing through the center of a wafer transfer port, and the third rack is arranged deviant from the axis by a certain distance corresponding to 5% to 48% of the diameter of the wafer.

Abstract: A quench hardening jig for a cylindrical work piece comprises a flat shaped base member(1), a plurality of taper plates(2) and an inversely tapered block(4), the plurality of the taper plates being disposed radiantly on the base member retractably relative to a center of the base member while each taper plate being formed such that it is substantially L shaped in its front view and an internal surface thereof is tapered, the inversely tapered block having an inversely tapered surface(4a) fitting to the tapered surface(2a) of the taper plate and being mounted on the tapered surface of the taper plate such that a progress of the inversely tapered block(4) in a vertical direction contracts/expands an external diameter formed by the respective taper plates(2).

Abstract: This invention anneals a vertical stack of two or more groups of unseparated wafers, with approximately 10 wafers in each group. The invention makes it possible to anneal more wafers in a single annealing operation under a variety of conditions, including: oxygen outer diffusion annealing to form a denuded zone; annealing to control bulk micro defects and provide intrinsic gettering functions; annealing to enhance gate oxide integrity by eliminating crystal-originated particles from the wafer surface and internal grown-in or as-grown defects; and suppression of dislocation and slip in elevated temperature environments.

Abstract: A resistive heating structure for a processing apparatus such as a chemical vapor deposition chamber. The system includes a resistive heating substrate holder including a support surface and a support shaft, the holder being comprised of a first material. The support surface includes a resistive heating element. The support shaft has a given length, and through bores for allowing a thermocouple to engage the support surface and electrical conductors to couple to the resistive heating element in the support surface. A metallic mounting structure is coupled to the support shaft and secured to the process apparatus to create a sealed environment within the holder and mounting structure to protect the electrical leads and thermocouple from the process environment.

Abstract: A substrate heat-treating apparatus includes a heat-treating plate, and support pins extending through the heat-treating plate to be vertically movable relative thereto. The support pins support each substrate at a lower surface thereof such that edges of the substrate are at a higher level than a central region of the substrate. This construction facilitates air flows into and out of a space between the lower surface of the substrate and the upper surface of the heat-treating plate when the substrate is vertically moved.

Abstract: An heat-treating ring boat (20) for semiconductor wafers (W) has a top plate (21), a bottom plate (22), six columns (23-28), and 63 ring trays (31). The trays (31) are mounted in grooves (20a) of the columns (23-28). To fix the trays (31), a fixing rod (33) is detachably mounted between the top plate (21) and bottom plate (22). A through hole (21a) and a recessed portion (22a) to mount the fixing rod (33) therein are formed in the top plate (21) and bottom plate (22). Notches (34) to engage with the fixing rod (33) are formed in the trays (31). A notch (32) to engage with the fixing rod (33) is formed in the column (23). A projection (41) is formed on each tray (31) to abut against the side surface of the column (24).