Abstract: A cap cover suitable for a furnace for semiconductor process is provided. The furnace includes a plurality of injectors and a base, and the cap cover is disposed on the base of the furnace. The cap cover includes a circular plate and an outer ring. The outer ring is disposed on the outer edge of the circular plate and extends upward from a surface of the circular plate not facing the base. The outer ring has a gap, and the gap is sufficient to accommodate the injectors.

Abstract: A heat treatment jig by the invention comprising: the diameter of a disk-type structure being 60% or more of that of loaded semiconductor wafers; the thickness being 1.0 mm or more but 10 mm or less; the surface roughness Ra of 0.1 ?m or more but 100 ?m or less at a contacting surface with the wafers; and the surface planarity being specifically controlled in the concentric direction as well as in the diametrical direction, otherwise in place of above planarity, comprising a controlled maximum height in such a way that the maximum height is obtained by the flatness measurement at the multiple positions and the difference between said maximum height and the hypothetical-average-height-plane thus set is 50 ?m or less, can reduce the slip generation due to the close adhesion of the wafers and the jig.

Abstract: When a two-division structure heat treatment jig for semiconductor substrate that includes a silicon first jig that comes into direct contact with a semiconductor substrate that is heat treated and supports the semiconductor substrate, and a second jig (holder) that holds the first jig and is mounted on a heat treatment boat is adopted as a heat treatment boat of a vertical heat treatment furnace, the stress concentrated during the heat treatment on a particular portion of the semiconductor substrate can be reduced; in the case of a semiconductor substrate large in the tare stress and having an outer shape of 300 mm being heat treated, or even in the case of the heat treatment being carried out under very high temperature conditions, the slips can be suppressed from occurring. The present invention can be widely applied as a stable heat treatment method of semiconductor substrates.

Abstract: A heat treatment jig for semiconductor silicon substrates is configured such that a cristobalitized oxide film is formed in a region where the cristobalitized oxide film is in contact with a silicon substrate backside. When said heat treatment jig is used, generation of a slip can be prevented during heat treatment. In the case where the heat treatment jig is used in combination with a shielding plate, particles are further prevented from adhering to the silicon substrate surface to maintain quality characteristics of the semiconductor silicon substrate at a higher level, and device production yield can largely be improved. The heat treatment jig can easily be manufactured by introducing a cristobalitization promoting agent to a surface or in the vicinity of a surface of the heat treatment jig, performing the heat treatment at temperatures in the range of 1000 to 1380° C., and repeating the introduction of the cristobalitization promoting agent and the heat treatment.

Abstract: A burning oven is provided, and has a housing that surrounds a combustion chamber in which material that is to be burned can be introduced after the housing is opened and can be placed upon a combustion chamber base. A deposit element is disposed externally of the combustion chamber, and has a deposit surface that is formed at least partially of glass ceramic.

Abstract: A heat treatment jig for supporting silicon semiconductor substrates by contacting, being loaded onto a heat treatment boat in a vertical heat treatment furnace, comprises; the configuration of a ring or a disc structure with the wall thickness between 1.5 and 6.0 mm; the deflection displacement of 100 ?m or less at contact region in loaded condition; the outer diameter which is 65% or more of the diameter of said substrate; and the surface roughness (Ra) of between 1.0 and 100 ?m at the contact region. The use of said jig enables to effectively retard the slip generation and to avoid the growth hindrance of thermally oxidized film at the back surface of said substrate, diminishing the surface steps causing the defocus in photolithography step in device fabrication process, thereby enabling to maintain high quality of silicon semiconductor substrates and to substantially enhance the device yield.

Abstract: There is provided a vertical heat treatment system capable of simplifying the structure of various mechanisms in the vicinity of an opening which is formed in a partition wall separating a housing-box transfer area from a treating-object transfer area (a wafer transfer area), and of contributing to space saving, when an object to be treated is carried in the vertical heat treatment system through the opening to carry out a predetermined treatment.

Abstract: The present invention provides a wafer holder, a wafer support member, a wafer boat and a heat treatment furnace, which are capable of sufficiently suppressing slip dislocations, without lowering productivity and at low cost, in the high temperature heat treatment of silicon wafers, and said wafer holder is characterized in that: the wafer holder is composed of a wafer support plate and three or more wafer support members mounted on said wafer support plate, each of the wafer support members having a wafer support portion or more; at least one of said wafer support members is a tilting wafer support member which has a plurality of upward-convex wafer support portions on the upper surface and is tiltable with respect to said wafer support plate; and the wafer is supported by at least four wafer support portions.

Abstract: This invention provides a heat treatment jig for semiconductor silicon substrates, which, in respective heat treatment of hydrogen annealing or argon annealing, can handle enlargement of the diameter of wafers to be treated and can also prevent slipping and dislocations that occur as a result of the stress caused by the weight of the wafer itself or the deflection of the heat treatment jig itself.

Abstract: A setter and a method for manufacturing a ceramic substrate are capable of suppressing deformation such as warpage occurring in a ceramic substrate after baking. A ceramic green sheet 4 is mounted and baked on a mount surface of a zirconia setter wherein an average particle size is 0.3 ?m, a porcelain density is not less than 6 kg/dm 3, a thermal conductivity is not more than 5 W/mK, and an arithmetic average roughness of the mount surface is 1 ?m–20 ?m, whereby it is feasible to suppress the deformation such as warpage occurring in a piezoelectric ceramic substrate after baked.

Abstract: A wafer boat for use in heat treatment of semiconductor wafers in a vertical furnace comprises support rods extending generally vertically when the wafer boat is placed in the vertical furnace. Fingers are supported by and extend along vertical extent of the support rods. Wafer holder platforms are adapted to be supported by groups of fingers lying in generally different common horizontal planes. The fingers are adapted to underlie the wafer holder platforms and support the platforms at the support locations. The fingers and wafer holder platforms each have a respective first overall maximum thickness. The support location of at least one of the fingers and the wafer holder platforms have a second maximum thickness less than the first overall maximum thickness.

Abstract: A fixture for supporting a plurality of semiconductor chips during the thermal cycling of the chips, including a fluid-permeable bottom screen, a chip-cavity-defining plate supported against a top surface of the bottom screen, a lower attaching mechanism for attaching the chip-cavity-defining plate to the top surface of the bottom screen, and a removable fluid-permeable top screen attached to a top surface of the chip-cavity-defining plate to cover the plurality of holes and chips therein.

Abstract: The present invention is a boat for a thermal process including: a plurality of pillars; a plurality of claws formed in each of the pillars in a height direction at predetermined intervals; a plurality of supporting plates mounted in a tier-like manner between the plurality of pillars via the claws, each supporting plate having an object-to-be-processed mounting surface on which an object to be processed can be mounted; and a groove and a through hole provided in the object-to-be-processed mounting surface. According to the present invention, the groove and the through hole provided in the object-to-be-processed mounting surface form an air layer between the object-to-be-processed mounting surface of the supporting plate and the object to be processed, so that sticking of the object to be processed can be inhibited. Thus, even during a thermal process at a high temperature, generation of slip caused by the sticking of the object to be processed can be inhibited.

Abstract: A support slug (2) used for the heat treatment of a part (3), particularly for the hardening of a steel part, comprises a guide element (221) that is used to guide the part (3) towards a supporting surface (230) of the support slug (2) when said part is being positioned on the support slug. A ceramic element (23) including the supporting surface (230) is embedded in the metal body (20) of the support slug.

Abstract: A heat insulation pedestal and a vertical type furnace tube is provided. The heat insulation pedestal is used for supporting the furnace tube. The heat insulation pedestal comprises a top support, a plurality of heat insulation plates and a number of connection sections. The top support has an annular base and a reinforced structure. The reinforced structure and the annular base are connected to provide the top support with a structural strength greater than the annular base. The heat insulation plates are set up below the top support. The connection sections connect the heat insulation plates and connect the top support to one of the heat insulation plates. Because the top support has a structural strength greater than the annular base, the pedestal is prevented from undesirable deformation due to heat.

Abstract: A method is provided for heating a substrate in a process chamber using a heated chuck. In accordance with the method, the substrate is lowered onto the chuck and heated to a first temperature less than a temperature of the chuck. The substrate is then raised away from the chuck, and a process is carried out on the substrate while the substrate is supported above the chuck. The substrate is then lowered back to the chuck and heated to a second temperature greater than the first temperature for further processing of the substrate.

Abstract: A pedestal for use in a high temperature vertical furnace for the processing of semiconductor wafers provides a closure and heat insulation for the lower end of the furnace and is a wafer boat support. The pedestal, comprising quartz-enveloped insulation material, supports a wafer boat at a boat support level and is provided with an upper section disposed above the boat support level. The upper section comprises enveloped insulating material. The envelope of the upper section is also formed of quartz and the insulating material in the upper section has a lower thermal conductance than the insulating material in a lower quartz enveloped section.

Abstract: Methods and apparatuses to improve the temperature uniformity of a workpiece being processed on a heated platen of a thermal processing station. A heated platen is enclosed in a housing incorporating an additional heat source that uniformly outputs thermal energy into the process chamber in which the heated platen is positioned. In preferred embodiments, this heat source is positioned in the lid of the housing. It is additionally preferred that the heated lid includes features that provide a gas flow path to introduce to and/or purge gas from the process chamber. In terms of photoresist performance, the improved thermal uniformity provided by using such an additional heat source in the housing, e.g., in the lid, offers improved line width control and line uniformity across a wafer.

Abstract: A support for a material to be fired for a ceramic dental prosthesis, having a support plate dimensionally stable when heat is applied and having a plurality of passages which are arranged perpendicularly relative to the support plate surface. A bundle of several pins, which in an undeformed state extend parallel with each other, can be introduced into each one of the passages for placing the dental prosthesis to be fired on them.

Abstract: An apparatus and method to position a wafer onto a wafer holder and to maintain a uniform wafer temperature is disclosed. The wafer holder or susceptor comprises a recess or pocket whose surface is concave and includes a grid containing a plurality of grid grooves separating protrusions. The concavity and grid grooves define an enclosed flow volume between a supported wafer and the susceptor surface, as well as an escape area, or total cross-sectional area of the grid grooves opening out from under the periphery of the wafer. These are chosen to reduce the wafer slide and curl during wafer drop-off and wafer stick during wafer pick-up, while improving thermal uniformity and reducing particle problems. In another embodiment, centering locators in the form of thin, radially placed protrusions are provided around the edge of the susceptor pocket to reduce further the possibility of contact between the wafer and the outer edge of the susceptor.

Abstract: Immediately after a cold substrate G is placed on a substrate table 3, a large electric power P1 is supplied to a heating element 32 embedded in the substrate table for a time period T1 so that temperature of the substrate table overshoots a target temperature, and thereafter zero or very small electric power P2 is supplied to the heating element for a time period T2 so that the temperature of the substrate table 3 is lowered to the target temperature while temperature of the substrate continues to rise up to the target temperature. When both the temperature of the substrate table and of the substrate reaches approximately to the target temperature after the time period T2 has elapsed, control of the electric power is entrusted to a PID controller.

Abstract: A jig for heat treatment of a workpiece capable of use over a long period of time by minimizing or eliminating deformation thereof caused by thermal distortion and which is capable of performing heat treatment of the workpiece by reducing the amount of heat energy absorbed by the jig in a heat-treatment furnace. The jig includes an outer peripheral frame formed by a plurality of members and a mounting portion arranged inside the outer peripheral frame and also formed by a plurality of members. The workpiece rests on the mounting portion during use. The members of the outer peripheral frame and mounting portion are movably connected to each other with an expansion space being provided between each adjacent member capable of absorbing thermal expansion of the member during thermal treatment.

Abstract: An assembly of heating furnace and semiconductor wafer-holding jig. This assembly includes a furnace body made of refractory or heat insulting material; a heater disposed around the inner side surface of the furnace body; a reaction chamber which forms a uniform heating zone; and a wafer-holding jig. The wafer-holding jig is capable of holding the wafer and advancing and retracting the wafer in the uniform heating region along the longitudinal direction of the furnace body. The front surface of the semiconductor wafer to be heat-treated is substantially in parallel with the surface of the heater. The assembly of the invention can be used in rapid thermal processing and the footprint of the heating furnace can be reduced.

Abstract: A method is provided for heating a substrate in a process chamber using a heated chuck. In accordance with the method, the substrate is lowered onto the chuck and heated to a first temperature less than a temperature of the chuck. The substrate is then raised away from the chuck, and a process is carried out on the substrate while the substrate is supported above the chuck. The substrate is then lowered back to the chuck and heated to a second temperature greater than the first temperature for further processing of the substrate.

Abstract: An apparatus and method to position a wafer onto a wafer holder and to maintain a uniform wafer temperature is disclosed. The wafer holder or susceptor comprises a recess or pocket whose surface is concave and includes a grid containing a plurality of grid grooves separating protrusions. The concavity and grid grooves define an enclosed flow volume between a supported wafer and the susceptor surface, as well as an escape area, or total cross-sectional area of the grid grooves opening out from under the periphery of the wafer. These are chosen to reduce the wafer slide and curl during wafer drop-off and wafer stick during wafer pick-up, while improving thermal uniformity and reducing particle problems. In another embodiment, centering locators in the form of thin, radially placed protrusions are provided around the edge of the susceptor pocket to reduce further the possibility of contact between the wafer and the outer edge of the susceptor.

Abstract: The invention relates to a device and a method for the heat treatment of substrates, especially semiconductor wafers. The device comprises a reaction chamber with a compensation element. According to the invention the substrate can be inserted and withdrawn again more easily by the fact that the compensation element (15) can be at least partly lowered and/or raised in the reaction chamber.

Abstract: A support sleeve for supporting a high temperature process tube comprises one or more circumferential channels, each channel connected to either a feed for gas or a vacuum exhaust. One circumferential channel opens to the top surface of the sleeve, on which the process tube is supported to provide a gas/vacuum seal between the process tube and support sleeve. Another circumferential channel is connected to a gas feed and provided with gas injection holes, evenly distributed along the support sleeve perimeter to provide a cylindrically symmetrical injection of process gas into the process tube. Another circumferential channel is connected to an exhaust for gas and provided with gas exhaust holes, evenly distributed along the circumference of the support sleeve, to provide a cylindrically symmetric exhaust of process gases from the process tube.

Abstract: A substrate feed chamber that is equipped in a substrate processing apparatus is provided. The substrate feed chamber has a storage tray capable of storing simultaneously three or more substrate holding trays that hold substrates in a vertical or substantially vertical condition and a horizontal movement mechanism that moves horizontally the storage tray with respect to the substrate feed position in order to effect feeding-in or feeding-out movement of the substrate holding tray between any of the chambers of a group consisting of processing chambers and load lock chambers and, in addition, if required, has a rotary movement device that rotates the storage tray. Improvement in throughput in a substrate processing apparatus can thereby be achieved and increase in the ground-contacting area of the device as a whole can be prevented.

Abstract: A thermal processing unit of the invention includes a processing container that can contain an object to be processed therein, the processing container having a lower end provided with an opening. The opening is opened and closed by a lid. A flange is provided at a peripheral portion of the opening, and a gas-supplying unit is provided at the flange for supplying a gas into the processing container. A heating mechanism can heat the object to be processed contained in the processing container.

Abstract: A semiconductor wafer boat has a plurality of discrete boat parts stacked one atop the other. Each of the of the boat parts includes a wafer support in the form of a plurality of columns each having a plurality of vertically spaced apart grooves for use in supporting semiconductor wafers as vertically spaced from one another. Corresponding ones of the grooves in the columns of a boat part can receive the outer peripheral edge of the wafer directly, or a ring plate to which the wafer is mounted. Each adjacent pair of boat parts has confronting end portions forming a joint at which the boat parts of the pair are freely coupled to one another such that each of the boat parts may be replaced independently of the other boat parts. Thus, when any of the boat parts experiences thermal deformation after long periods of use, the boat part may be readily replaced without damaging any part of the boat and without the costs associated with replacing the boat entirely.

Abstract: A substrate holder for processing a semiconductor substrate includes a deep, generally vertical annular groove configured to impede the radial flow of heat within the holder and reduce heat loss from the annular side edge of the holder. The holder includes one or more support elements, such as a flat contiguous surface or a plurality of protrusions defined by intersecting grooves. The one or more support elements are configured to support a substrate a particular size in a support plane defined by the one or more support elements. The groove is configured to surround an outer edge of the substrate when the substrate is supported on the one or more support elements. In a preferred embodiment, the groove has a depth of at least 25% of the thickness of the substrate holder.

Abstract: Hardening fixture for simultaneous hardening of a multitude of sawblades, comprising a bottom plate (13) against which the lower ends (12) of the sawblades are supported, vertical pillars (14) and side plates (15) with lateral openings, where guiding strips (16, 17) and distance elements (19) keep the sawblades parallel close to each other without compressive force, where the structural pans are made from graphite with a surface coating not containing carbon.

Abstract: The invention provides systems and methods for controlling resist baking processes, such as PEB of chemically amplified photoresists. A system of the invention provides a baking plate through which hot fluids and cold fluids may be alternately circulated. The system takes measurements relating to temperature of the baking plate, temperature of the resist, and/or extent of the baking process. Using this data, the system controls the baking temperature and/or the overall extent of the baking process through control over the flow of hot and cold fluids. By alternating between hot and cold fluid circulation, systems of the invention provide rapidly responsive temperature control and/or abrupt termination of baking. Control over the baking process is further increased by implementing flow and process control separately over each of a plurality of different portions of a baking plate.

Abstract: A method of treating a surface of a stacked aluminum alloy ingot during a heating process. Spacer blocks are positioned adjacent aluminum alloy ingots to form a stack, wherein the spacer block has a support surface contacting a contact surface of the aluminum alloy ingot, and at least one of the support surface and the contact surface include a fluorine containing material. The stack is heated to at least a temperature at which the fluorine containing material decomposes or vaporizes such that a layer of a fluorinated oxide compound is formed at the interfaces between the ingots and the spacer blocks.

Abstract: A carriage includes two or more beams each having a number of orifices for receiving a number of rods and for allowing the rods to be retained between the beams for supporting the objects to be heated by the kilns or furnaces. The beams each includes two end bulges each having a groove for receiving two ends of two bars, and for forming a stable supporting structure. The beams each includes a lower cavity and an upper projection for engaging with each other and for allowing the beams and the carriages to be superposed or piled with each other.

Abstract: A heating processing chamber has a plate for holding a wafer and a heater heating the plate portion. The plate portion is composed of a plurality of divided plates separated from each other, and thereby the plate is hard to break even through a drastic change in temperature, thus making it possible to increase the durability of the plate.

Abstract: Target processing temperatures for a wafer and offset values are tabulated and stored in a temperature controller in advance. When a target processing temperature is changed, a hot plate temperature corresponding to the target processing temperature for the wafer is calculated based on the offset value in the table. Based on the calculated value, a heater controller controls a heater to change the hot plate temperature. Thereby, in a substrate heat processing apparatus for performing heat processing at different temperatures, an offset value corresponding to each temperature is automatically changed, whereby the substrate can be heated at an appropriate temperature.

Abstract: An apparatus and method to position a wafer onto a wafer holder and to maintain a uniform wafer temperature is disclosed. The wafer holder or susceptor comprises a recess or pocket whose surface is concave and includes a grid containing a plurality of grid grooves separating protrusions. The concavity and grid grooves define an enclosed flow volume between a supported wafer and the susceptor surface, as well as an escape area, or total cross-sectional area of the grid grooves opening out from under the periphery of the wafer. These are chosen to reduce the wafer slide and curl during wafer drop-off and wafer stick during wafer pick-up, while improving thermal uniformity and reducing particle problems. In another embodiment, centering locators in the form of thin, radially placed protrusions are provided around the edge of the susceptor pocket to reduce further the possibility of contact between the wafer and the outer edge of the susceptor.

Abstract: An apparatus and method to position a wafer onto a wafer holder and to maintain a uniform wafer temperature is disclosed. The wafer holder or susceptor comprises a recess or pocket whose surface is concave and includes a grid containing a plurality of grid grooves separating protrusions. The concavity and grid grooves define an enclosed flow volume between a supported wafer and the susceptor surface, as well as an escape area, or total cross-sectional area of the grid grooves opening out from under the periphery of the wafer. These are chosen to reduce the wafer slide and curl during wafer drop-off and wafer stick during wafer pick-up, while improving thermal uniformity and reducing particle problems. In another embodiment, centering locators in the form of thin, radially placed protrusions are provided around the edge of the susceptor pocket to reduce further the possibility of contact between the wafer and the outer edge of the susceptor.

Abstract: Apparatus for heat treating a cutting tool comprises a furnace and a tool holder within the furnace adapted to receive therein a first portion of the tool, a second portion of the tool projecting from the tool holder, the second portion of the tool being directly exposed to radiant heat from at least one radiant heating element within the furnace with the first portion of the tool being shielded from the radiant heat.

Abstract: An object of the present invention is to provide a ceramic plate comprising a ceramic substrate for a semiconductor producing/examining device making it possible to prevent a warp of its ceramic substrate from being generated and prevent damage and the like of a silicon wafer put on the ceramic substrate, based on the warp, from being generated. The ceramic plate for a semiconductor producing/examining device of the present invention is a ceramic plate comprising a ceramic substrate for a semiconductor producing/examining device, a semiconductor wafer being put on a surface of the ceramic substrate, or held a given distance apart from the surface of the above-mentioned ceramic substrate, wherein the surface roughness of the ceramic substrate according to JIS R 0601 is set as follows: Rmax=0.

Abstract: A jig for heat treatment of a work capable of using for long period by eliminating or minimizing the deformation thereof due to thermal distortion and capable of efficiently performing the heat treatment of the work by reducing the amount of heat energy absorbed by the jig in a heat treating furnace, comprising an outer peripheral frame (2) formed of a plurality of members and a placing part (3) disposed in the outer peripheral frame (2) and formed of a plurality of members for placing the work (4), wherein the members are movably connected to each other, and the connection of the members forming the outer peripheral frame (2) to each other and the connection of these members to the members forming the placing part (3) are performed through extension intervals (5) capable of absorbing the extension of the members when the members are thermally expanded.

Abstract: A method and apparatus for shielding a device, such as a pump, from a process chamber of a semiconductor wafer processing system. The apparatus comprises a shield connected to a mounting portion. The mounting portion has a fluid passage wherein the temperature of the apparatus is regulated by flowing fluid through the passage.

Abstract: A heat treatment apparatus for performing a heat treatment on one or more substrates includes a substrate support device holding the substrates, the substrate support device having a main body and a contact portion being in contact with a substrate. A surface of the main body is made of a material different from that of the contact portion, and at least a surface of the contact portion is made of either glassy carbon or graphite.

Abstract: A plurality of side posts (12) and a plurality of rear posts (13) are disposed on the opposite sides S and on the rear side R of the workpiece (W), respectively. The side posts (12) and the rear posts (13) are provided with grooves (14, 15) having workpiece support surfaces (14a, 15a) and formed at predetermined vertical intervals, respectively. Each support surface of each side posts (12) is formed in a wide width and extends along the circumference of the workpiece from the center axis C of the workpiece toward the front side F on the front side of the workpiece (W). Each of the support surfaces (14a, 15a) of the posts (12, 13) inclines down toward the center axis C of the workpiece.

Abstract: A rotary furnace includes a drum and a frame supporting the frame for rotation about a nominally horizontal rotational axis. The frame and the drum are supported for pivotal movement about a horizontal pivotal axis. A door supported on the frame normally closes the front end of the drum and is selectively pivotal to an open position to facilitate charging of the drum. The door includes a pouring door which is openable to facilitate discharge of molten material from the drum.

Abstract: A substrate holder for vertical furnaces is configured to support substrates in slots at inner portions of the substrates, rather than solely at the edges. The holder allows sufficient clearance above substantially the entire front face of the substrate that a substrate deflection or bow, induced by thermal stresses during loading and unloading of the substrate holder into and out of the furnace, can be accommodated without the substrate touching the support members of the substrate holder. A relationship is established such that, for given loading/unloading temperatures, a minimum amount of free space in the wafer slots is provided to avoid substrate scratching. Conversely, for a given amount of free space in the wafer slots, the relationship provides maximum loading and/or unloading temperatures to avoid scratching.

Abstract: A spacer member in a furnace including an aluminum tube containing a ceramic material. The ceramic material provides high compressive strength and the composite product resists high temperature creep.

Abstract: A container (10) for holding parts during a heat treating process. The container includes a bottom plate (14), end walls (20 and 22), sidewalls (30 and 32) and dividers (40, 42 and 44) which are connected together using a tab and slot construction to form an egg crate structure. The construction of the container reduces the effects of the heat treating process on the container. The guide cradle (58) in the compartment (12) of the container supports the cylinder head in the compartment and reduces the movement of the cylinder head during the heat treating process. The positioners (60) on the top portion (58A) of the guide cradle guides the cylinder head into the guide cradle and into the compartment. The bottom portion (58B) of the guide cradle supports the cylinder head above the bottom plate.

Abstract: A method and apparatus are provided for supporting a semiconductor wafer in a vacuum and transferring heat by gas conduction between the wafer and a wafer chuck to facilitate wafer processing. The wafer substrate is loaded onto a seat plate, and then a clamp ring is lowered against the force of compression springs that bias the seat plate upward on guides extending upward from the body of the chuck. The clamp ring touches the wafer on the front or top side with an inner O-ring that is attached to the bottom of the clamp ring, and forces the wafer and the seat plate down to a lower position parallel to a heat transfer surface of the chuck, spaced therefrom by a narrow gap. In the lower position, an outer O-ring that is also attached to the bottom of the clamp contacts an outer sealing surface that surrounds the heat transfer surface, thereby enclosing a cavity that includes an annular chamber around the outside of the chuck and the narrow gap. Gas is supplied to the passage and thus to the gap.