Abstract: A semiconductor device comprises a substrate and a semiconductor die. Bumps are formed over the substrate or a first surface of the semiconductor die. Conductive columns devoid of solder are formed over the substrate or the first surface of the semiconductor die. The semiconductor die is disposed over the substrate. A collet including a first cavity and a second cavity formed in a surface of the first cavity is mounted over the semiconductor die with a second surface of the semiconductor die opposite the first surface disposed within the first cavity. The bumps are reflowed. A force is applied to the collet to hold the bumps to the conductive columns while reflowing the bumps to make electrical connection to the conductive columns. The collet is removed. An underfill material is deposited between the semiconductor die and substrate. An encapsulant is deposited over the semiconductor die and substrate.

Abstract: The invention relates to a method for producing an interconnection pad on a conducting element comprising an upper face and a side wall; the method being executed from a substrate at least the upper face of which is insulating; the conducting element going through at least an insulating portion of the substrate, the method being characterized in that it comprises the sequence of the following steps: a step of embossing the conducting element, a step of forming, above the upper insulating face of the substrate, a stack of layers comprising at least one electrically conducting layer and one electrically resistive layer, a step of partially removing the electrically resistive layer, a step of electrolytic growth on the portion of the electrically conducting layer so as to form at least one interconnection pad on said conducting element.

Abstract: The present invention relates to a process for realizing a connecting structure in a semiconductor substrate, and the semiconductor substrate realized accordingly. The semiconductor substrate has at least a first surface, and is foreseen for a 3D integration with a second substrate along the first surface, wherein the 3D integration is subject to a lateral misalignment in at least one dimension having a misalignment value.

Abstract: Embodiments of the present disclosure include semiconductor packages and methods of forming the same. An embodiment is a method including mounting a die to a top surface of a substrate to form a device, encapsulating the die and top surface of the substrate in a mold compound, the mold compound having a first thickness over the die, and removing a portion, but not all, of the thickness of the mold compound over the die. The method further includes performing further processing on the device, and removing the remaining thickness of the mold compound over the die.

Abstract: A packaging substrate includes a circuit board, a number of first conductive posts, and a number of second conductive posts. The circuit board includes a first base and a first conductive pattern layer formed on a first surface of the first base. The first conductive posts extend from and are electrically connected to the first conductive pattern layer. The second conductive posts extend from and are electrically connected to the first conductive pattern layer. The height of each of the second conductive posts are larger than that of each of the first conductive posts.

Abstract: An integrated circuit packaging system, and a method of manufacture thereof, including: a patterned first conductive plating; a molding on the patterned first conductive plating; a through via through the molding; a second conductive plating on the molding and the through via; a protection layer partially covering the first conductive plating, the second conductive plating and the molding; a device on the first conductive plating; and an external connector being attached to the second conductive plating.

Abstract: A semiconductor die includes a crack stopper on an under-bump metallization (UBM) layer. The crack stopper is in the shape of hollow cylinder with at least two openings.

Abstract: A flip chip interconnect of a die on a substrate is made by mating the interconnect bump onto a narrow interconnect pad on a lead or trace, rather than onto a capture pad. The width of the narrow interconnect pad is less than a base diameter of bumps on the die to be attached. Also, a flip chip package includes a die having solder bumps attached to interconnect pads in an active surface, and a substrate having narrow interconnect pads on electrically conductive traces in a die attach surface, in which the bumps are mated onto the narrow pads on the traces.

Abstract: A semiconductor device package having pre-formed and placed through vias and a process for making such a package is provided. One or more signal conduits are placed in a holder that is subsequently embedded in an encapsulated semiconductor device package. The ends of the signal conduits are exposed and the signal conduits are then used as through package vias, providing signal-bearing pathways between interconnects or contacts on the bottom and top of the package. Holders can be provided in a variety of geometries and materials, depending upon the nature of the application. Further, multiple holders with signal conduits can be provided in a single package to provide for more complex interconnect configuration demands in, for example, system-in-a-package applications.

Abstract: A semiconductor device has a semiconductor wafer with a plurality of semiconductor die. A first conductive layer is formed over a surface of the wafer. A first insulating layer is formed over the surface of the wafer and first conductive layer. A second conductive layer has first and second segments formed over the first insulating layer. A second insulating layer is formed over the first insulating layer and second conductive layer. A UBM layer is formed over the second insulating layer and the first segment of the second conductive layer. A first bump is formed over the UBM layer. The first bump is electrically connected to the second segment and electrically isolated from the first segment of the second conductive layer. A second bump is formed over the surface of the wafer and electrically connected to the first segment of the second conductive layer.

Abstract: A method of fabricating a packaged semiconductor device includes integrating a plurality of singulated semiconductor die in a die carrier, and forming one or more interconnect layers on the die carrier. The interconnect layers include at least one of conductive intra-layer structures and inter-layer structures coupled to contact pads on the plurality of singulated semiconductor die. A set of landing pads is formed coupled to a first subset of the contact pads via a first set of the conductive intra-layer structures and inter-layer structures. A set of probe pads is formed coupled to a second subset of the contact pads via a second set of the conductive intra-layer structures and inter-layer structures. The die carrier is singulated to form a plurality of packaged semiconductor devices. The set of probe pads is removed during the singulating the die carrier.

Abstract: This invention prevents a substrate of a semiconductor chip that has through-silicon vias collectively arranged in a specific area thereof from becoming cracked. When a direction in parallel with a long side of a first semiconductor chip is defined as a row direction and a direction perpendicular to the long side of the first semiconductor chip is defined as a column direction, each one of the first through-silicon vias is arranged on any one of grid points arranged in m rows and n columns (m>n). In addition, as viewed in a cross section taken along a short side of the first semiconductor chip, the center of a through-silicon via area, which is defined by coupling the outermost grid points arranged in m rows and n columns, is off center of the short side of the first semiconductor chip in a first direction.

Abstract: A semiconductor device has a substrate and first conductive layer formed over the substrate. An insulating layer is formed over the first substrate with an opening over the first conductive layer. A second conductive layer is formed within the opening of the insulating layer. A portion of the second conductive layer is removed to expose a horizontal surface and side surfaces of the second conductive layer below a surface of the insulating layer. The second conductive layer has non-linear surfaces to extend a contact area of the second conductive layer. The horizontal surface and side surfaces can be stepped surfaces or formed as a ring. A third conductive layer is formed over the second conductive layer. A plurality of bumps is formed over the horizontal surface and side surfaces of the second conductive layer. A semiconductor die is mounted to the substrate.

Abstract: A power conversion module includes a circuit carrier board, a semiconductor module and an inductor module. The circuit carrier board has plural bonding pads. The semiconductor module is disposed on a first surface of the circuit carrier board. The inductor module has plural pins. The pins are extended from the inductor module along a first direction and connected with corresponding bonding pads on the circuit carrier board, so that a receptacle is defined between the inductor module and the circuit carrier board for accommodating the semiconductor module.

Abstract: A conductive feature on a semiconductor component is disclosed. A first passivation layer is formed over a substrate. A bond pad is formed over the first passivation layer. A second passivation layer overlies the first passivation layer and the bond pad. The second passivation layer has a first opening overlying the bond pad and a plurality of second openings exposing a top surface of the first passivation layer. A buffer layer overlies the second passivation layer and fills the plurality of second openings. The buffer layer has a third opening overlapping the first opening and together exposes a portion the bond pad. The combined first opening and third opening has sidewalls. An under bump metallurgy (UBM) layer overlies the sidewalls of the combined first opening and third opening, and contacts the exposed portion of the bond pad. A conductive feature overlies the UBM layer.

Abstract: An integrated circuit in a multi-chip package is provided. The integrated circuit may include adjustable interface circuitry configured to interface with other off-chip components. In particular, the adjustable interface circuitry may include a microbump input-output buffer operable to drive signals off of the integrated circuit and operable to receive signals from other integrated circuits in the multi-chip package via a microbump. The microbump input-output buffer may include output buffers and input buffers. The output buffers may have programmable drive strengths and may each be selectively switched in and out of use depending on the desired application. Each output buffer may include a level shifter, a buffer circuit, and multiple inverter-like circuits each of which can be turned on or off to adjust the drive strength of that output buffer.

Abstract: Wafer-level package (semiconductor) devices are described that have a pillar structure that extends at least partially into a solder bump to mitigate thermal stresses to the solder bump. In implementations, the wafer-level package device may comprise an integrated circuit chip having a surface and a solder bump disposed over the surface. The wafer-level package device may also include a pillar structure disposed over the surface that extends at least partially into the solder bump.

Abstract: A semiconductor device has a semiconductor substrate, an electrode pad formed on a surface of the semiconductor substrate, and a protruding electrode electrically connected to the electrode pad. The protruding electrode comprises a pedestal part formed on the electrode pad and a protruding part formed on the pedestal part. The protruding part has a columnar part with a width smaller than that of the pedestal part, and a tapered part with a width gradually increased from an end of the columnar part side toward an end of the pedestal part side. An angle of inclination of a side surface of the tapered part with respect to a plane surface perpendicular to the surface is larger than an angle of inclination of a side surface of the pedestal part and an angle of inclination of a side surface of the columnar part with respect to the plane surface.

Abstract: An integrated circuit structure includes a semiconductor chip having a die side and a non-die side, the die side having one or more trenches formed therein. The integrated circuit structure further includes at least one die bonded onto the die side of the semiconductor chip. The integrated circuit structure further includes a protecting material encapsulating the at least one die and substantially filling the one or more trenches.

Abstract: A flip chip package includes a carrier coupled to a die. The carrier includes: at least a via, for coupling the surface of the carrier to electrical traces in the carrier; and at least a capture pad electrically coupled to the via, wherein the capture pad is plated over the via. The die includes: at least a bond pad formed on the surface of the die; and at least a copper column, formed on the bond pad for coupling the die to the capture pad on the carrier, wherein the copper column is disposed on one side of the capture pad about the via opening only.

Abstract: Provided are a semiconductor package and a method of fabricating the same. In one embodiment, to fabricate a semiconductor package, a wafer having semiconductor chips fabricated therein is provided. A heat sink layer is formed over the wafer. The heat sink layer contacts top surfaces of the semiconductor chips. Thereafter, the plurality of semiconductor chips are singulated from the wafer.

Abstract: An electro-optical module is provided, which includes: a substrate having a first surface with a groove and an opposite second surface; a plurality of support members disposed on the first surface of the substrate; at least an electro-optical element having opposite active and non-active surfaces and disposed in the groove of the substrate via the non-active surface thereof; an interposer disposed on the first surface of the substrate and the electro-optical element for electrically connecting the electro-optical element to the substrate, wherein the interposer has a through hole corresponding in position to the active surface of the electro-optical element; and a transparent plate disposed over the first surface of the substrate and the interposer through the support members and having a lens portion corresponding in position to the through hole of the interposer, thereby reducing signal losses, improving alignment precision, and achieving preferred thermal dissipation and EMI shielding effects.

Abstract: The disclosure is directed to a device and method for manufacture thereof. The device includes a first workpiece bonded to a second workpiece by a bump interconnection structure. The bump interconnection structure allows for optimized packaging assembly yield and bond integrity.

Abstract: Integrated circuit assemblies, as well as methods for creating the same, are provided. The integrated circuit assembly includes a first chip and a second chip, including respective face surfaces, wherein the first chip and the second chip are bonded in a face-against-face contact configuration. The integrated circuit assembly includes a via disposed to pass through the first chip and the second chip. The via is surrounded by at least one material of the respective first chip and the second chip. A cushion layer encapsulating at least a portion of the via is formed between the via and the at least one material surrounding the via.

Abstract: A preassembly semiconductor device comprises chip soldering structures on a semiconductor chip and substrate soldering structures on a substrate corresponding to the chip soldering structures. The substrate soldering structures extend toward the chip soldering structures for forming solder connections with the chip soldering structures. The chip and the substrate are in preassembly positions relative to one another. The height of the substrate soldering structures is greater than the height of the chip soldering structures. A pre-applied underfill is contiguous with the substrate and is sufficiently thick so as to extend substantially no further than the full height of the substrate soldering structures.

Abstract: A releasable buried layer for 3-D fabrication and methods of manufacturing is disclosed. The method includes forming an interposer structure which includes forming a carbon rich dielectric releasable layer over a wafer. The method further includes forming back end of the line (BEOL) layers over the carbon rich dielectric layer, including wiring layers and solder bumps. The method further includes bonding the solder bumps to a substrate using flip chip processes. The flip chip processes comprises reflowing the solder bumps and rapidly cooling down the solder bumps which releases the carbon rich dielectric releasable layer from the wafer.

Abstract: A bump-on-trace (BOT) structure is described. The BOT structure includes a first work piece with a metal trace on a surface of the first work piece, wherein the metal trace has a first axis. The BOT structure further includes a second work piece with an elongated metal bump, wherein the elongated metal bump has a second axis, wherein the second axis is at a non-zero angle from the first axis. The BOT structure further includes a metal bump, wherein the metal bump electrically connects the metal trace and the elongated metal bump. A package having a BOT structure and a method of forming the BOT structure are also described.

Abstract: Provided are a stretchable electronic device and a method of manufacturing the same. The manufacturing method includes forming coil interconnection on a first substrate, forming a first stretchable insulating layer that covers the coil interconnection, forming a second substrate on the first stretchable insulating layer, separating the first substrate from the coiling interconnection and the first stretchable insulating layer, and forming a transistor on the coil interconnection.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a lead; placing an integrated circuit device, having an external connector, adjacent to and electrically isolated from the lead; mounting an integrated circuit over the lead and the integrated circuit device with the integrated circuit electrically isolated from the integrated circuit device; and forming a package encapsulation, having an encapsulation base, over the lead, the integrated circuit, and the integrated circuit device with the lead and the external connector exposed from the encapsulation base.

Abstract: A method of assembling a semiconductor package includes attaching a semiconductor die to a frame having a strip or panel form. The semiconductor die has at least one stud bump. The die and the stud bump are covered with a first encapsulation material, and then at least a portion of the stud bump is exposed. At least one die conductive member is formed on the first encapsulation material and electrically coupled to the stud bump. The die conductive member is covered with a second encapsulation material, and then at least a portion of the die conductive member is exposed. At least one grid array conductive member is formed on the second encapsulation material and electrically coupled to the die conductive member. Finally, at least one solder ball is attached to the at least one grid array conductive member.

Abstract: The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which the film for flip chip type semiconductor back surface contains a black pigment.

Abstract: A method of manufacturing an integrated circuit package includes: forming a substrate including: forming a core layer, and forming vias in the core layer; forming a conductive layer having a predetermined thickness on the core layer and having substantially twice the predetermined thickness in the vias; and forming connections between an integrated circuit die and the conductive layer.

Abstract: A semiconductor device has a semiconductor die with a die bump pad. A substrate has a conductive trace with an interconnect site. A conductive bump material is deposited on the interconnect site or die bump pad. The semiconductor die is mounted over the substrate so that the bump material is disposed between the die bump pad and interconnect site. The bump material is reflowed without a solder mask around the die bump pad or interconnect site to form an interconnect structure between the die and substrate. The bump material is self-confined within the die bump pad or interconnect site. The volume of bump material is selected so that a surface tension maintains self-confinement of the bump material substantially within a footprint of the die bump pad and interconnect site. The interconnect structure can have a fusible portion and non-fusible portion. An encapsulant is deposited between the die and substrate.

Abstract: A method for manufacturing a semiconductor device includes: preparing a semiconductor wafer including a plurality of semiconductor chips arranged in the shape of a matrix, the semiconductor wafer having a first bump electrode formed on one face thereof; forming a depressed portion on a first face of the semiconductor wafer, the depressed portion partitioning the semiconductor wafer into respective semiconductor chips; placing the first face of the semiconductor wafer onto a support tape; and cutting the semiconductor wafer along the depressed portion from a second face opposite to the first face of the semiconductor wafer by the use of a dicing blade having a width smaller than the width of the depressed portion to thereby divide the semiconductor wafer into a plurality of semiconductor chips.

Abstract: A method for implementing a prompt dose mitigating capacitor is disclosed. Initially, a flip chip is provided with multiple capacitors. The flip chip is then placed on top of a substrate having multiple electronic devices connected to a set of power rails. The terminals of the capacitors within the flip chip are subsequently connected to the power rails within the substrate in order to regulate voltages appeared on the power rails during a radiation pulse.

Abstract: A method of making an integrated circuit module starts with a top leadframe strip comprising a plurality of integrally connected top leadframes. A plurality of flipchip dies are mounted on the top leadframe strip with solder bumps of each flipchip bonded to predetermined pad portions on each of the top leadframes. The top leadframe strip is attached to a bottom leadframe strip. The bottom leadframe strip has a plurality of integrally connected bottom leadframes each having a central die attach pad (DAP) portion and a peripheral frame portion. A back face of each flipchip die contacts the DAP portion of each bottom leadframe. Lead portions of each top leadframe are attached to the peripheral frame portion of each bottom leadframe. The top leadframe strip is attached to the bottom leadframe strip with a back face of each flipchip die contacting the DAP portion of each bottom leadframe and with lead portions of each top leadframe attached to the peripheral frame portion of each bottom leadframe.

Abstract: A method for manufacturing a flip-chip circuit configuration, comprising: providing a circuit carrier having a first surface and a monolithic semiconductor component having a second surface; ascertaining a height profile of the first surface of the circuit carrier; applying a first contact unit to the first surface and applying a second contact unit assigned to the first contact unit to the second surface, first contact height of the first contact unit and/or second contact height of the second contact unit being selected as a function of the ascertained height profile; and applying the semiconductor component to the circuit carrier and forming electrical connections between the first and second contact unit, by applying the second contact unit to the first contact unit and pressing the semiconductor component to the circuit carrier with deformation of the first and/or second contact unit.

Abstract: A semiconductor package and a method of manufacturing the same. The semiconductor package includes; a printed circuit board (PCB); a first semiconductor chip attached onto the PCB; an interposer that is attached onto the first semiconductor chip to cover a portion of the first semiconductor chip and comprises first connection pad units and second connection pad units that are electrically connected to each other, respectively, on an upper surface opposite to a surface of the interposer facing the first semiconductor chip; a second semiconductor chip attached onto the first semiconductor chip and the interposer as a flip chip type; a plurality of bonding wires that electrically connect the second connection pad units of the interposer to the PCB or the first semiconductor chip to the PCB; and a sealing member formed on the PCB to surround the first semiconductor chip, the second semiconductor chip, the interposer, and the bonding wires.

Abstract: Provided are a printed circuit board which can be used as a substrate for a package, a method of manufacturing the printed circuit board, and a semiconductor package using the printed circuit board, the printed circuit board including: a first substrate having a first mounting area for mounting a package substrate and a second mounting area for mounting a semiconductor element; a single layer or multi-layered circuit pattern of the first substrate; and a post bump connected to the circuit pattern, provided on an external insulating layer of the first mounting area, and having a concave upper surface.

Abstract: A semiconductor structure includes a three dimensional stack including a first semiconductor die and a second semiconductor die. The second semiconductor die is connected with the first semiconductor die with a bump between the first semiconductor die and the second semiconductor die. The semiconductor structure includes a molding compound between the first semiconductor die and the second semiconductor die. A first portion of a metal structure over a surface of the three dimensional stack and contacting a backside of the second semiconductor die and a second portion of the metal structure over the surface of the three dimensional stack and configured for electrically connecting the three dimensional stack with an external electronic device.

Abstract: An electronic board includes conducting traces having an upper surface at least partially sunken with respect to a gluing surface of the board. A surface mount technology electronic device for mounting to the board includes insulating windows that define gluing sites within one or more pins. An electronic system is formed by one or more of such surface mount technology electronic devices mounted to electronic board. The devices are attached using a wave soldering technique that flows through channels formed by the sunken conductive traces.

Abstract: A method comprises forming semiconductor flip chip interconnects having electrical connecting pads and electrically conductive posts terminating in distal ends operatively associated with the pads. We solder bump the distal ends by injection molding, mask the posts on the pads with a mask having a plurality of through hole reservoirs and align the reservoirs in the mask to be substantially concentric with the distal ends. Injecting liquid solder into the reservoirs and allowing it to cool provides solidified solder on the distal ends, which after mask removal produces a solder bumped substrate which we position on a wafer to leave a gap between the wafer and the substrate. The wafer has electrically conductive sites on the surface for soldering to the posts. Abutting the sites and the solder bumped posts followed by heating joins the wafer and substrate. The gap is optionally filled with a material comprising an underfill.

Abstract: A power device package for containing, protecting and providing electrical contacts for a power transistor includes a top and bottom lead frames for directly no-bump attaching to the power transistor. The power transistor is attached to the bottom lead frame as a flip-chip with a source contact and a gate contact directly no-bumping attaching to the bottom lead frame. The power transistor has a bottom drain contact attaching to the top lead frame. The top lead frame further includes an extension for providing a bottom drain electrode substantially on a same side with the bottom lead frame. In a preferred embodiment, the power device package further includes a joint layer between device metal of source, gate or drain and top or bottom lead frame, through applying ultrasonic energy.

Abstract: A method of forming a package on package structure includes bonding a semiconductor die and an interposer frame to a substrate, and the interposer frame surrounds the semiconductor die. The semiconductor die is disposed in an opening of the interposer frame, and the interposer frame has a plurality of TSHs. The plurality of TSHs is aligned with a plurality of bumps on the substrate. The method also includes positioning a packaged die over the semiconductor die and the interposer frame. The packaged die has a plurality of bumps aligned with the plurality of TSHs of the interposer. The method further includes performing a reflow process to allow solder of the plurality of bumps of the substrate and the solder of the plurality of bumps of the packaged die to fill the plurality of TSHs.

Abstract: A device is provided. The device may comprise an integrated circuit package. The integrated circuit package may comprise a first layer and a solder mask. The first layer may comprise a top surface wherein the solder mask is disposed on the top surface of the first layer. The solder mask may comprise a vertical edge. The vertical edge may form an angle between the top surface of the first layer and the vertical edge of not less than 90 degrees. The angle may be not less than 120 degrees or not less than 150 degrees.

Abstract: An integrated circuit includes a stacked conductive layer interposer and a first die at least partially encapsulated in a mold material. The first die is mechanically and electrically attached to a top surface of the stacked conductive layer interposer using solder bumps. The integrated circuit further includes a first warpage correction layer.

Abstract: Methods of forming a microelectronic packaging structure are described. Those methods may include forming a solder paste comprising a sacrificial polymer on a substrate, curing the solder paste below a reflow temperature of the solder to form a solid composite hybrid bump on the conductive pads, forming a molding compound around the solid composite hybrid bump, and reflowing the hybrid bump, wherein the sacrificial polymer is substantially decomposed.

Abstract: An integrated circuit package includes a substrate having a heat conducting portion integrally formed with a heat dissipating portion. First and second integrated circuit dies are mounted to opposite sides of the heat conducting portion of the substrate. The first and second integrated circuit dies may each be packaged as flip-chip configurations. Electrical connections between contact pads on the first and second integrated circuit dies may be formed through openings formed in the heat conducting portion of the substrate. The heat dissipating portion may be positioned externally from a location between the first and second integrated circuit dies so that it dissipates heat away from the integrated circuit package into the surrounding environment.

Abstract: A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.

Abstract: A chip embedded package method is provided by an embodiment of the present invention. The method comprises: etching metallic sinks on the thicker metal layer of each organic substrate; part of metallic sinks is used for packaging at least one chip, and other metallic sinks are used for via-holes; mounting the at least one chip into a metallic sink of each organic substrate via adhesive; flipping one organic substrate on another to form a combination; drilling blind-holes on both sides of the combination of the two organic substrates to pass through the adhesive; drilling via-holes to get through the combination of the two organic substrates, wherein the via-holes locates beyond the metallic sinks with chips; filling the blind-holes and via-holes with conductive medium through an electroplating process.