Abstract: An integrated circuit package comprises a molding compound covering a semiconductor die. A healing substance is on the surface of the semiconductor die at an interface of the molding compound and the semiconductor die. The healing compound comprises a catalyst and a plurality of microcapsules containing a sealing compound. If the molding compound becomes delaminated from the semiconductor die the microcapsules rupture and spill the sealing compound. When the sealing compound is spilled and contacts the catalyst the sealing compound and catalyst polymerize and fasten the molding compound to the semiconductor die.

Abstract: A multilayered printed circuit board or a substrate for mounting a semiconductor device includes a semiconductor device, a first resin insulating layer accommodating the semiconductor device, a second resin insulating layer provided on the first resin insulating layer, a conductor circuit provided on the second resin insulating layer, and via holes for electrically connecting the semiconductor device to the conductor circuit, wherein the semiconductor device is accommodated in a recess provided in the first resin insulating layer, and a metal layer for placing the semiconductor device is provided on the bottom face of the recess. A multilayered printed circuit board in which the installed semiconductor device establishes electrical connection through the via holes is provided.

Abstract: A semiconductor device has a substrate with first and second opposing surfaces. A plurality of conductive vias is formed partially through the first surface of the substrate. A first conductive layer is formed over the first surface of the substrate electrically connected to the conductive vias. A first semiconductor die is mounted over the first surface of the substrate. The first semiconductor die and substrate are mounted to a carrier. An encapsulant is deposited over the first semiconductor die, substrate, and carrier. A portion of the second surface of the substrate is removed to expose the conductive vias. An interconnect structure is formed over a surface of the substrate opposite the first semiconductor die. A second semiconductor die can be stacked over the first semiconductor die. A second semiconductor die can be mounted over the first surface of the substrate adjacent to the first semiconductor die.

Abstract: A lead frame includes a die stage; an inner lead provided near the die stage; and a bus bar provided between the die stage and the inner lead and supported by a hanging lead, wherein the hanging lead is inclined with respect to the inner lead, and a wire connection face of the bus bar is displaced with respect to a wire connection face of the inner lead in a direction of a frame thickness.

Abstract: A semiconductor device is made by mounting a semiconductor wafer to a temporary carrier. A plurality of TSV is formed through the wafer. A cavity is formed partially through the wafer. A first semiconductor die is mounted to a second semiconductor die. The first and second die are mounted to the wafer such that the first die is disposed over the wafer and electrically connected to the TSV and the second die is disposed within the cavity. An encapsulant is deposited over the wafer and first and second die. A portion of the encapsulant is removed to expose a first surface of the first die. A portion of the wafer is removed to expose the TSV and a surface of the second die. The remaining portion of the wafer operates as a TSV interposer for the first and second die. An interconnect structure is formed over the TSV interposer.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a substrate including: patterning a bonding pad on the substrate, patterning a first signal trace coupled to the bonding pad, patterning a second signal trace on the substrate, and connecting a pedestal on the second signal trace; mounting an integrated circuit on the substrate; and coupling an electrical interconnect between the integrated circuit, the bonding pad, the pedestal, or a combination thereof.

Abstract: A semiconductor device comprises: a core substrate; at least one insulating layer and at least one wiring layer which are disposed on each of a first surface of the core substrate and a second surface opposite to the first surface; a via(s) which is disposed in each of the insulating layer and the core substrate, and connects the wiring layers to each other; a semiconductor element, mounted on the first surface of the core substrate, with a surface for forming an electrode terminal(s) facing up; and a connecting portion(s) which penetrates the insulating layer disposed on the first surface and directly connects the electrode terminal of the semiconductor element and the wiring layer disposed on the first surface. A minimum wiring pitch of the wiring layer directly connected to the connecting portion is smaller than that of any of the wiring layer(s) disposed on the second surface.

Abstract: A stackable integrated circuit chip layer and module device that avoids the use of electrically conductive elements on the external surfaces of a layer containing an integrated circuit die by taking advantage of conventional wire bonding equipment to provide an electrically conductive path defined by a wire bond segment that is encapsulated in a potting material so as to define an electrically conductive wire bond “through-via” accessible from at least the lower or second surface of the layer.

Abstract: A microelectronic package (31) has a microelectronic device, which is encapsulated in a quantity of material (27), and a lead frame element (15) for enabling the microelectronic device to be electrically contacted from outside of the package (31). The lead frame element (15) comprises at least two elongated members (11) comprising electrically conductive material and a filling material (12) comprising electrically insulating material, wherein the members (11) are partially embedded in the filling material (12). The lead frame element (15) is manufactured by providing elongated members (11), positioning the members (11) according to a predetermined configuration, providing filling material (12) to spaces (13) which are present between the members (11), and possibly removing portions of the filling material (12) and the members (11) in order to expose the electrically conductive material of the members (11).

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming an elevated contact above and between a lead and a die pad that is coplanar with the lead; connecting an integrated circuit and the lead; attaching a jumper interconnect between the elevated contact and the lead; and forming an encapsulant over the integrated circuit, the lead, the die pad, the elevated contact, and the jumper interconnect, the encapsulant having a recess in a base side with the elevated contact exposed in the recess and the lead exposed from the base side.

Abstract: A semiconductor die has a conductive layer including a plurality of trace lines formed over a carrier. The conductive layer includes a plurality of contact pads electrically continuous with the trace lines. A semiconductor die has a plurality of contact pads and bumps formed over the contact pads. A plurality of conductive pillars can be formed over the contact pads of the semiconductor die. The bumps are formed over the conductive pillars. The semiconductor die is mounted to the conductive layer with the bumps directly bonded to an end portion of the trace lines to provide a fine pitch interconnect. An encapsulant is deposited over the semiconductor die and conductive layer. The conductive layer contains wettable material to reduce die shifting during encapsulation. The carrier is removed. An interconnect structure is formed over the encapsulant and semiconductor die. An insulating layer can be formed over the conductive layer.

Abstract: A method of manufacturing an inductor embedded into a semiconductor chip package (100) is described, which method comprises providing a carrier (102; 202; 302) having, between a first side and an opposite second side, a first conductive layer (104; 503), an intermediate layer (205; 505), a second conductive layer (106; 504), forming an inductor and contact pads for the chip by patterning the first conductive layer (104; 503) from the first side of the carrier (102; 202; 302), assembling the chip and providing an encapsulation (514) and forming terminals of the package, by patterning the second conductive layer (106; 504) from the second side of the carrier.

Abstract: A semiconductor device including: a die pad, a die on the die pad, and resin encapsulating the die and forming an isolation thickness over the die pad, the resin including a mounting aperture and a major surface configured for mounting to an external device, the major surface having a non warpage compensation portion adjacent the die and a warpage compensation portion in a relatively thermally inactive zone with an approximate discontinuity and/or abrupt change in gradient between the non warpage compensation portion and the warpage compensation portion.

Abstract: A lead frame for a semiconductor device has a die pad with a first major surface for receiving an semiconductor die and a connection bar that encircles the die pad. First lead fingers that project from the connection bar towards the die pad have proximal ends close to the die pad and distal ends connected to the connection bar. The proximal ends of the first lead fingers lie in a first plane. Second lead fingers that project from the connection bar towards the die pad have proximal ends close to the die pad and distal ends connected to the connection bar. The proximal ends of the second lead fingers lie in a second plane that is parallel and spaced from the first plane. An isolation frame is disposed between the proximal ends of the first and second lead fingers. The isolation frame separates but supports the proximal ends of the first and second lead fingers.

Abstract: An integrated circuit package having a die pad with a first face and a second face, a plurality of inner leads, and a plurality of sides between the first face and the second face. The plurality of inner leads is disposed substantially co-planer with and substantially around the die pad. The package also comprises a plurality of outer leads disposed substantially co-planar with and substantially around the plurality of inner leads and the die pad, so that the sides of each of the plurality of outer leads are offset from the sides of each of the plurality of inner leads. A first adhesive layer disposed on the first face of the die pad and a second adhesive layer disposed on the first faces of each of the plurality of inner leads. An IC chip is coupled to the first face of the die pad through the first adhesive layer and to the plurality of inner leads through the second adhesive layer. The package further comprises wires linking the inner leads and outer leads to the IC chip.

Abstract: In a semiconductor module where a metal sheet, an insulating layer and a circuit element are stacked in a manner that the insulating layer is penetrated with a bump structure, the connection reliability of the bump structure and the circuit element is enhanced. A semiconductor wafer is prepared where a semiconductor substrate having electrodes and protective film on the surface are arranged in a matrix shape. On the surface of the semiconductor substrate, an insulating layer is held between the substrate and a copper sheet, integrally formed with bumps, having grooves in the vicinity of the bumps. The semiconductor substrate, the insulating layer and the copper sheet are press-bonded by a press machine into a single block. The bump penetrates the insulating layer, and the bump and the electrode are electrically connected together. An extra part of the insulating layer pushed out by the bump flows into the groove.

Abstract: An apparatus and system, as well as fabrication methods therefor, may include a thermal intermediate structure with metal decorated carbon nanotubes incorporated in solder.

Abstract: A packaging assembly (30), such as a ball grid array package, is formed which distributes power across an interior region of an integrated circuit die (52) by using an encapsulated patterned leadframe conductor (59) that is disposed over the die (52) and bonded to a plurality of bonding pads (45) formed in a BGA carrier substrate (42) and in the interior die region, thereby electrically coupling the interior die region to an externally provided reference voltage.

Abstract: A method includes providing an integral array of first carriers, arranging first semiconductor chips on the first carriers, and arranging an integral array of second carriers over the semiconductor chips.

Abstract: An integrated circuit package that comprises a lead frame, an integrated circuit located on the lead frame and a shunt resistor coupled to the lead frame and to the integrated circuit. The shunt resistor has a lower temperature coefficient of resistance than the lead frame, and the lead frame has a lower resistivity than the shunt resistor. The shunt resistor has a low-resistance coupling to external leads of the lead frame, or, the shunt resistor has its own integrated external leads.

Abstract: The manufacturing method of advanced quad flat non-leaded packages includes performing a pre-cutting process prior to the backside etching process for defining the contact terminals. The pre-cutting process ensures the isolation of individual contact terminals and improves the package reliability.

Abstract: An integrated circuit package system includes providing a leadframe that is coplanar with a bottom surface of the integrated circuit package system to which is attached a device with a thermally conductive coating that is coplanar with the bottom surface of the integrated circuit package system to the leadframe, the device having the characteristics of being singulated from a wafer and the thermally conductive coating having the characteristics of being singulated from a wafer level thermally conductive coating and encapsulating the device with an encapsulation material that leaves the thermally conductive coating exposed for thermal dissipation.

Abstract: A printed board comprising a packaging surface on which an electronic component is packaged, an adhesion prohibited portion which is provided at a region of the printed board different from a region where the electronic component is provided, and to which adhesion of the adhesive material is prohibited, and a blocking step portion which is formed at a region between the region where the electronic component is provided and the region where the adhesion prohibited portion is provided, which blocks any adhesive material which has spilled out from between the bottom surface of the electronic component and the packaging surface from reaching the adhesion prohibited portion.

Abstract: One aspect of the present invention involves a foil-based method for packaging integrated circuits. Initially, a metallic foil and a photoresist layer are attached with a carrier. The photoresist layer is exposed and patterned. Afterward, multiple integrated circuit dice are connected to the foil. The dice and portions of the foil are encapsulated in a molding material. The foil is then etched based on the patterned photoresist layer to define multiple device areas in the foil, where each device area supports at least one of the integrated circuit dice. Some aspects of the present invention relate to panel arrangements that are involved in the aforementioned method.

Abstract: A method of forming an electronic component package includes coupling a first surface of an electronic component to a first surface of a first dielectric strip, the electronic component comprising bond pads on the first surface; forming first via apertures through the first dielectric strip to expose the bond pads; and filling the first via apertures with an electrically conductive material to form first vias electrically coupled to the bond pads. The bond pads are directly connected to the corresponding first vias without the use of a solder and without the need to form a solder wetting layer on the bond pads.

Abstract: The aim the disclosed process is to ensure maximum precision both at the level of the manufacturing of an electronic assembly from a chip with small dimensions as well as the level of the placement of such an assembly on an insulating substrate. This aim is achieved by a placement process on a substrate, of at least one electronic assembly comprising a chip having at least one electric contact on one of its faces, said contact being intended to be electrically connected to a conductive track segment. The electronic assembly is built on a holding device which seizes and holds at least one conductive track segment previously formed and a chip. A placement device places this electronic assembly thus built at a predetermined position relative to the substrate and embeds or inserts said electronic assembly into the substrate.

Abstract: An integrated circuit package system includes: forming a die-attach paddle, a terminal pad, and an external interconnect with the external interconnect below the terminal pad; connecting an integrated circuit die with the terminal pad and the external interconnect; and forming an encapsulation, having a first side and a second side at an opposing side to the first side, surrounding the integrated circuit die with the terminal pad exposed at the first side and the external interconnect extending below the second side.

Abstract: An electronic part mounting structure includes electronic part having a plurality of electrode terminals, a substrate provided with connection terminals in locations corresponding to these electrode terminals, and protruding electrode for connecting one of electrode terminals and one of connection terminals, where electrode terminal of electronic part and connection terminal of substrate are connected through protruding electrode and protruding electrode is formed of a conductive resin including a photosensitive resin and a conductive filler.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a structure having a via filled with conductive material completely through the structure, a recess, and a pedestal portion bordering the recess; mounting a semiconductor device inside the recess in the structure; and encapsulating the structure and the semiconductor device in an encapsulation.

Abstract: A Fo-WLCSP has a first polymer layer formed around a semiconductor die. First conductive vias are formed through the first polymer layer around a perimeter of the semiconductor die. A first interconnect structure is formed over a first surface of the first polymer layer and electrically connected to the first conductive vias. The first interconnect structure has a second polymer layer and a plurality of second vias formed through the second polymer layer. A second interconnect structure is formed over a second surface of the first polymer layer and electrically connected to the first conductive vias. The second interconnect structure has a third polymer layer and a plurality of third vias formed through the third polymer layer. A semiconductor package can be mounted to the WLCSP in a PoP arrangement. The semiconductor package is electrically connected to the WLCSP through the first interconnect structure or second interconnect structure.

Abstract: Disclosed is a novel method for manufacturing a semiconductor package, which can suppress the formation of voids in an encapsulating resin. Specifically disclosed is a method for manufacturing a semiconductor package, which comprises: (1) a step wherein a first member, which is selected from a group consisting of semiconductor chips and circuit boards, is coated with solvent borne semiconductor encapsulating epoxy resin composition that essentially contains (A) an epoxy resin, (B) a phenol novolac resin in such an amount that the mole number of phenolic hydroxyl groups is 0.8-1.

Abstract: An object is to provide an electronic device of a multilayer structure with high density and high reliability that can be reduced in size while incorporating an electronic component therein, and further provide a production method for easily producing such an electronic device. An electronic device of the present invention includes wiring layers and electrically insulating layers stacked on a core board and establishes predetermined electrical conduction between the wiring layers through upper-lower side conducting vias provided in the electrically insulating layers.

Abstract: A prepreg which can meet a demand for thickness reduction is provided. The prepreg has first and second resin layers having different applications, functions, capabilities, or properties, and allows an amount of a resin composition in each of the first and second resin layers to be set appropriately depending on a circuit wiring portion to be embedded into the second resin layer. Further, a method for manufacturing the above prepreg, and a substrate and a semiconductor device having the prepreg are also provided.

Abstract: A lead frame with patterned conductive runs on the top surface to accept a wire bonded or flip-chip or COL configuration is disclosed. The top pattern is completed and the bottom is etched away creating cavities. The cavities are filled with a pre-mold material that lend structural support of the lead frame. The top is then etch through the lead frame to the pre-mold, except with the top conductive runs exist. In this manner the conductive runs are completed and isolated from each other so that the placement of the runs is flexible. The chips are mounted and the encapsulated and the lead frames are singulated. The pattern on the top and the bottom may be defined by first plated the patterns desired.

Abstract: An improved Quad Flat No-Lead package is described. The package is formed by encapsulating a die mounted on a leadframe with a moulding compound using a mould chase. The mould chase comprises a number of internal projections which form openings in the mould compound to expose regions of the leadframe. These exposed regions of the leadframe may then be used for soldering the package to a substrate. The arrangement of the openings may be designed such that each aperture is the same shape and size and/or that the apertures are arranged in multiple rows on the underside of the package.

Abstract: Disclosed in this specification is a semiconductor package with a die attach pad and a lead frame which are electrically and mechanically connected to one another through a conductive wire ribbon. Such a configuration reduces the package footprint and also permits different styles of die attach pads and lead frames to be interchanged, thus reducing production costs.

Abstract: A radiation-emitting or -receiving semiconductor chip 9 is soft-soldered for mounting on a leadframe 2 over which a prefabricated plastic encapsulant 5, a so-called premolded package, is injection-molded. Through the use of a low-melting solder 3 applied in a layer thickness of less than 10 ?m, the soldering process can be carried out largely without thermal damage to the plastic encapsulant 5.

Abstract: A chip package structure includes a chip module, a plurality of pre-patterned structures, a filling material layer, and a redistribution layer. The chip module includes a chip including an upper surface, a side surface, and an active surface. The pre-patterned structures are disposed around the chip. Each of the pre-patterned structures includes a circuit, a first surface, an upper surface opposite the first surface, and a side surface. The filling material layer encapsulates the chip and the pre-patterned structures. The filling material layer includes a second surface, and encapsulates the upper and side surfaces of the chip, and the upper and side surfaces of each of the pre-patterned structures. The active surface, each first surface, and the second surface are substantially co-planar. The redistribution layer is disposed on the active surface, each first surface, and the second surface. The redistribution layer electrically connects the chip and each circuit.

Abstract: A circuit board has a curved portion provided in at least one side of an external shape thereof. An external connecting terminal is provided on a first main surface of the circuit board. A semiconductor element is mounted on a second main surface of the circuit board. A first wiring network is provided in a region except the terminal region on the first main surface. A second wiring network is provided on the second main surface. Distance from the side including the curved portion to the first wiring network is larger than distance from at least one of the other sides to the first wiring networks, and distance from the side including the curved portion to the second wiring network is larger than distance from at least one of the other sides to the second wiring networks.

Abstract: An integrated circuit package system includes: fabricating a lead frame including: providing inner leads having an inner lead pitch of progressive length, forming a lead shoulder, on the inner leads, having a shoulder height of a progressive height, and forming outer leads coupled to the lead shoulder and the inner leads; mounting an integrated circuit die on the lead frame; and molding a package body on the lead frame and the integrated circuit die.

Abstract: Disclosed is a liquid encapsulating resin composition containing an epoxy resin (A), an amine type curing agent (B), and a basic compound (C), wherein, in case that the liquid encapsulating resin composition is filled between a semiconductor element and a substrate connected to each other by solder bumps, the residue of a fluxing agent used for forming the solder bump connection is removed.

Abstract: An integrated circuit assembly is fabricated on a metal substrate strip in an array format that has raised circuitry pattern formed by photolithographic and metal etching processes. The circuitry pattern is formed on one side of the metal substrate only. The raised circuitry's etch depth extends partially through the metal substrate. Die attachment can be performed using a non-conductive material applied directly onto and around the raised circuitry features directly under the die. After wirebond and molding processes, the molded metal substrate strip assembly is processed through a metal etching process to remove the metal substrate portion that is exposed beyond the mold cap. A solder mask coating can be applied to protect the metal circuitry and to define the package pad opening to form Land-Grid-Array (LGA) packages. Solder balls can also be attached to form Ball-Grid-Array (BGA) packages.

Abstract: Methods are disclosed related to attaching a die to a leadframe. One such method includes initially bonding a carrier pad which is pre-coated with a thermosetting first adhesive to the leadframe. The first adhesive can be raised to its thermosetting cure temperature by heating the leadframe to a temperature just above the thermosetting cure temperature of the first adhesive. A thermosetting second adhesive which is liquid at room temperature can be applied to a second major surface of the carrier pad, and the die can be placed on the second adhesive and aligned with the leadframe. The second adhesive can be raised to its thermosetting cure temperature to bond the die to the carrier pad, and in turn form a bonded assembly.

Abstract: Provided is a method for manufacturing a semiconductor device in which movement of an island in resin sealing is prevented. A molding die includes an upper die and a lower die. The upper and lower dies are fitted together to form cavities and runners. In the lower die, a pod is provided. After heating and melting of a tablet made of a solid resin and housed in the pod, the melted sealing resin is pressurized by a plunger, and is supplied to each of the cavities. Specifically, a liquid sealing resin is supplied from the pod to the cavities, sequentially, from the upstream of the flow of the sealing resin supplied from the pod. The cavities communicate with each other through the runners. Furthermore, the runners through which the cavities communicate are provided to be tilted with respect to a path for supplying the sealing resin.

Abstract: A method of fabricating a chip package structure includes the steps of providing a lead frame having a die pad, plural leads and at least one structure enhancement element. A chip is then disposed on the die pad and plural bonding wires are formed to electrically connect the chip to the leads. Then, an upper encapsulant and a first lower encapsulant are formed on an upper surface and a lower surface of the lead frame, respectively. The first lower encapsulant has plural concaves to expose the structure enhancement element. Finally, the structure enhancement element is etched with use of the first lower encapsulant as an etching mask until the die pad and one of the leads connected by the structure enhancement element, or two of the adjacent leads connected thereby are electrically insulated.

Abstract: A leadframe employed by a leadless package comprises a plurality of package units and an adhesive tape. Each of the package units has a die pad with a plurality of openings and a plurality of pins disposed in the plurality of openings. The adhesive tape is adhered to the surfaces of the plurality of package units and fixes the die pad and the plurality of pins.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming an external interconnect; forming a first planar terminal adjacent to the external interconnect and non-planar to a portion the external interconnect; mounting a first integrated circuit over the first planar terminal; connecting the first integrated circuit with the external interconnect; and forming an encapsulation over the first planar terminal covering the first integrated circuit and with the external interconnect extending from a non-horizontal side of the encapsulation and with the first planar terminal coplanar with the adjacent portion of the encapsulation exposing the first planar terminal.

Abstract: A fabrication method of a chip scale package includes: disposing a chip on a carrier board and embedding the chip into a composite board having a hard layer and a soft layer; and removing the carrier board so as to perform a redistribution layer (RDL) process, thereby solving the conventional problems caused by directly attaching the chip on an adhesive film, such as film-softening caused by heat, encapsulant overflow, chip deviation and contamination, etc., all of which may result in poor electrical connection between the wiring layer and the chip electrode pads in the subsequent RDL process and even waste products as a result.

Abstract: An integrated package system with die and package combination includes forming a leadframe having internal leads and external leads, encapsulating a first integrated circuit on the leadframe, and encapsulating a second integrated circuit over the first integrated circuit.

Abstract: The present inventions relate to methods and arrangements for using a thin foil to form electrical interconnects in an integrated circuit package. One embodiment of the present invention involves attaching multiple dice to a foil carrier structure. The foil carrier structure is made of a thin foil that is bonded to a carrier. The dice and at least a portion of the metallic foil is then encapsulated with a molding material. The carrier is removed, leaving behind a molded foil structure. The exposed foil is patterned and etched using photolithographic techniques to define multiple device areas in the foil. Each device area includes multiple conductive lines. Afterwards, portions of the conductive lines are covered with a dielectric material and other portions are left exposed to define multiple bond pads in the device area. The molded foil structure can be singulated to form multiple integrated circuit packages.