Abstract: A method of manufacture of an integrated circuit packaging system includes: mounting a substrate-less integrated circuit package, having a terminal having characteristics of an intermetallic compound, over a substrate; connecting the substrate and the substrate-less integrated circuit package; and forming a base encapsulation over the substrate-less integrated circuit package with the terminal exposed.

Abstract: A semiconductor package having electrical connecting structures includes: a conductive layer having a die pad and traces surrounding the die pad; a chip; bonding wires; an encapsulant with a plurality of cavities having a depth greater than the thickness of the die pad and traces for embedding the die pad and the traces therein, and the cavities exposing the die pad and the traces; a solder mask layer formed in the cavities and having a plurality of openings for exposing the trace ends and a portion of the die pad; and solder balls formed in the openings and electrically connected to the trace ends. Engaging the solder mask layer with the encapsulant enhances adhesion strength of the solder mask layer so as to prolong the moisture permeation path and enhance package reliability.

Abstract: A method of manufacture of an integrated circuit package system includes: providing a penetrable layer; partially immersing leads in the penetrable layer; coupling an integrated circuit die to the leads; molding a package body on the integrated circuit die, the leads, and the penetrable layer; and exposing stand-off leads from the leads by removing the penetrable layer including establishing a stand-off height between a bottom of the package body and the bottom of the stand-off leads.

Abstract: A multiple-chip package has top and bottom pre-molded leadframes formed prior to the flip-chip attachment of semiconductor die to the leadframes. After die attachment, underfill is used to encase all but one surface of the die, and the top and bottom leadframes are joined together by solder bump balls with the exposed surfaces of the semiconductor dice proximate to each other.

Abstract: A power module includes a substrate having a surface on which a plurality of wiring patterns are formed, a semiconductor device mounted on the substrate and electrically connected to a part of the plurality of wiring patterns, and a terminal portion with a lead electrically connected to the other part of the plurality of wiring patterns, and is configured that the lead of the terminal portion is formed by laminating a plurality of metal members which contain a material substantially the same as or softer than the material for forming the other part of wiring patterns, and the material of the plurality of metal members, which is the same as or softer than the material for forming the other part of wiring patterns is electrically connected to the other part of wiring patterns through ultrasonic bonding.

Abstract: A semiconductor device package having pre-formed and placed through vias and a process for making such a package is provided. One or more signal conduits are placed in a holder that is subsequently embedded in an encapsulated semiconductor device package. The ends of the signal conduits are exposed and the signal conduits are then used as through package vias, providing signal-bearing pathways between interconnects or contacts on the bottom and top of the package. Holders can be provided in a variety of geometries and materials, depending upon the nature of the application. Further, multiple holders with signal conduits can be provided in a single package to provide for more complex interconnect configuration demands in, for example, system-in-a-package applications.

Abstract: A semiconductor device has an interposer frame mounted over a carrier. A semiconductor die has an active surface and bumps formed over the active surface. The semiconductor die can be mounted within a die opening of the interposer frame or over the interposer frame. Stacked semiconductor die can also be mounted within the die opening of the interposer frame or over the interposer frame. Bond wires or bumps are formed between the semiconductor die and interposer frame. An encapsulant is deposited over the interposer frame and semiconductor die. An interconnect structure is formed over the encapsulant and bumps of the first semiconductor die. An electronic component, such as a discrete passive device, semiconductor die, or stacked semiconductor die, is mounted over the semiconductor die and interposer frame. The electronic component has an I/O count less than an I/O count of the semiconductor die.

Abstract: A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the die. A cavity can be formed in the interposer frame to contain a portion of the first die. An encapsulant is deposited through the opening in the interposer frame over the carrier and first die. Alternatively, the encapsulant is deposited over the carrier and first die and the interposer frame is pressed against the encapsulant. Excess encapsulant exits through the opening in the interposer frame. The carrier is removed. An interconnect structure is formed over the encapsulant and first die. A second semiconductor die can be mounted over the first die or over the interposer frame.

Abstract: A substrate processing method processes a substrate including a processing target film, an organic film provided on the processing target film and having a plurality of line-shaped portions having fine width, and a hard film covering the line-shaped portions and the processing target film exposed between the line-shaped portions. The method includes a first etching step of etching a part of the hard film to expose the organic film and portions of the processing target film between the line-shaped portions; an ashing step of selectively removing the exposed organic film; and a second etching step of etching a part of the remaining hard film.

Abstract: A semiconductor package and a method of manufacturing the semiconductor package are disclosed. A semiconductor package in accordance with an embodiment of the present invention includes a substrate, which has a ground circuit formed thereon, a semiconductor chip, which is mounted on the substrate, a conductive first shield, which is formed on an upper surface of the semiconductor chip and connected with the ground circuit, and a conductive second shield, which covers the substrate and the semiconductor chip and is connected with the first shield. With a semiconductor package in accordance with an embodiment of the present invention, grounding is possible between semiconductor chips because a shield is also formed on an upper surface of the semiconductor chip, and the shielding property can be improved by a double shielding structure.

Abstract: A method is provided for fabricating a transmission line between electrical circuits. The method initially provides a first electrical circuit with a signal interface and a reference voltage interface, and a second electrical circuit with a signal interface and a reference voltage interface. The first circuit signal interface is connected to the second circuit signal interface with a metal wire. An insulator coating (e.g., poly-para-xylylene) is formed, encapsulating the wire. Then, an electrically conductive coating is formed, encapsulating the insulator coating. Typically, the conductive coating is connected to at least one of the first and second circuit reference voltage interfaces. In one aspect, the first circuit signal interface connection to the second circuit signal interface is a transmission line formed from the combination of the wire, insulator coating, and conductive coating.

Abstract: In regard to a semiconductor device having a multilayered wiring board where a semiconductor chip is embedded inside, a technology which allows the multilayered wiring board to be made thinner is provided. A feature of the present invention is that, in a semiconductor device where bump electrodes are formed over a main surface (element forming surface) of a semiconductor chip embedded in a chip-embedded wiring board, an insulating film is formed over a back surface (a surface on the side opposite to the main surface) of the semiconductor chip. As a result, it becomes unnecessary to form a prepreg over the back surface of the semiconductor chip. Therefore, an effect of thinning the chip-embedded wiring board in which the semiconductor chip is embedded is obtained.

Abstract: A microelectronic assembly can include a microelectronic element and a lead frame having a first unit and a second unit overlying the first unit and assembled therewith. The first unit can have a first metal layer comprising a portion of the thickness of the lead frame and including terminals and first conductive elements extending away therefrom. The second unit can have a second metal layer comprising a portion of the thickness of the lead frame and including bond pads and second conductive elements extending away therefrom. The first and second units each can have an encapsulation supporting at least portions of the respective first and second conductive elements. At least some of the second conductive elements can overlie portions of corresponding ones of the first conductive elements and can be joined thereto. The microelectronic element can have contacts electrically connected with the bond pads of the lead frame.

Abstract: An embedded package includes a semiconductor chip divided into a cell region and a peripheral region, having a first surface and a second surface which faces away from the first surface, and including an integrated circuit which is formed in the cell region on the first surface, a bonding pad which is formed in the peripheral region on the first surface and a bump which is formed over the bonding pad; a core layer attached to the second surface of the semiconductor chip; an insulation component formed over the core layer including the semiconductor chip and having an opening which exposes the bump; and a circuit wiring line formed over the insulation component and the bump and electrically connected to is the bump, wherein the insulation component formed in the cell region has a thickness larger than a height of the bump.

Abstract: The present semiconductor device packages include a die, a redistribution layer and a plurality of conductive pillars electrically connected to the redistribution layer. A molding compound partially encapsulates the die and the pillars. A plurality of interconnect patterns on the molding compound are electrically connected to the pillars. The interconnect patterns provide electrical connections for a second, stacked semiconductor package.

Abstract: A semiconductor package is provided. The semiconductor package includes a package body, a plurality of semiconductor chips, and an external connection terminal. The package body is stacked with a plurality of sheets where conductive patterns and vias are disposed. The plurality of semiconductor chips are inserted into insert slots extending from one surface of the package body. The external connection terminal is provided on other surface opposite to the one surface of the package body. Here, the plurality of semiconductor chips are electrically connected to the external connection terminal.

Abstract: An object of the present invention is to improve the quality control of a semiconductor device. By forming an inscription comprising a culled or pixel skipping pattern of dimples on the upper surface of a die pad in a QFN, it is possible to confirm the inscription by X-ray inspection or the like even after individuation and specify a cavity of a resin molding die. Further, it is possible to specify the position of a device region in a lead frame. As a result, when a defect appears, it is possible to sort a defective QFN by appearance inspection and improve quality control in the assembly of a QFN.

Abstract: A polymeric composition comprising a first polymer chosen from a poly(arylene ether) polymer including polymer repeat units of the following structure: —(O—Ar1—O—Ar2—O—)m—(—O—Ar3—O—Ar4—O)n- where Ar1, Ar2, Ar3, and Ar4 are identical or different aryl radicals, m is 0 to 1, n is 1 m; a polysulfone, a polyimide, a poly(etherketone), a polyurea, a polyurethane, and combinations thereof and a second polymer comprising a per(phenylethynyl) arene polymer derivative. Cured films containing the polymer can exhibit at least one of the following properties: Tg from 160° C. to 180° C., a dielectric constant below 2.7 with frequency independence, and a maximum moisture absorption of less than 0.17 wt %. Accordingly, the polymer is especially useful, for example, in interlayer dielectrics and in die-attach adhesives.

Abstract: A curable organopolysiloxane composition and an optical semiconductor element sealant, each comprising (A) a diorganopolysiloxane that has at least 2 alkenyl groups wherein at least 70 mole % of all the siloxane units are methylphenylsiloxane units and the total content of 1,3,5-trimethyl-1,3,5-triphenylcyclotrisiloxane and 1,3,5,7-tetramethyl-1,3,5,7-tetraphenylcyclotetrasiloxane is no more than 5 weight %, (B) an organopolysiloxane that has at least 2 silicon-bonded hydrogen atoms wherein at least 15 mole % of the silicon-bonded organic groups are phenyl groups, and (C) a hydrosilylation reaction catalyst. An optical semiconductor device in which an optical semiconductor element within a housing is sealed with the cured product from the aforementioned composition.

Abstract: A microelectronic package may include a stacked microelectronic unit including at least first and second vertically stacked microelectronic elements each having a front face facing a top surface of the package. The front face of the first element may be adjacent the top surface, and the first element may overlie the front face of the second element such that at least a portion of the front face of the second element having an element contact thereon extends beyond an edge of the first element. A conductive structure may electrically connect a first terminal at the top surface to an element contact at the front face of the second element, and include a continuous monolithic metal feature extending along the top surface and through at least a portion of an encapsulant, which is between the top surface and the front face of the second element, towards the element contact.

Abstract: An embodiment of the invention provides a method for forming an electronic device package, which includes providing a carrier substrate having an upper surface and an opposite lower surface; forming a cavity from the upper surface of the carrier substrate; disposing an electronic device having a conducting electrode in the cavity; forming a filling layer in the cavity, wherein the filling layer surround the electronic device; thinning the carrier substrate from the lower surface to a predetermined thickness; forming at least a through-hole in the electronic device or the in the carrier substrate; and forming a conducting layer over a sidewall of the through-hole, wherein the conducting layer electrically connects to the conducting electrode.

Abstract: Embodiments of the present invention are directed to metallic solderability preservation coating on connectors of semiconductor package to prevent oxide. Singulated semiconductor packages can have contaminants, such as oxides, on exposed metal areas of the connectors. Oxidation typically occurs on the exposed metal areas when the semiconductor packages are not stored in appropriate environments. Copper oxides prevent the connectors from soldering well. An anti-tarnish solution of the present invention is used to coat the connectors during sawing, after sawing, or both of a semiconductor array to preserve metallic solderability. The anti-tarnish solution is a metallic solution, which advantageously allows the semiconductor packages to not need be assembled immediately after fabrication.

Abstract: A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.

Abstract: The semiconductor device includes a wiring substrate having connection pads and a semiconductor chip having electrode pads. The semiconductor chip is mounted on the wiring substrate, and the electrode pads are connected to the connection pads via solder bumps. An underfill resin formed of a cured thermosetting resin is filled in a gap between the wiring substrate and the semiconductor chip. The underfill resin has a glass transition temperature which increases accompanying growth of crystal grains of the solder bumps.

Abstract: A semiconductor device has a carrier. A first semiconductor die is mounted to the carrier with an active surface of the first semiconductor die oriented toward the carrier. A dam structure is formed on the carrier and around the first semiconductor die by depositing dam material on the carrier with screen printing, electrolytic plating, electroless plating, or spray coating. An encapsulant is deposited over the carrier and around the first semiconductor die. The encapsulant has a coefficient of thermal expansion (CTE) that corresponds to a CTE of the dam material. The CTE of the dam material is equal to or less than the CTE of the encapsulant. The carrier is removed to expose the active surface of the first semiconductor die with the dam structure stiffening a periphery of the first semiconductor die. The semiconductor device is singulated through the dam structure.

Abstract: A semiconductor package and a method of fabricating the same. The semiconductor package includes a dielectric layer having opposite first and second surfaces; a semiconductor chip disposed on the first surface; at least two conductive pads embedded in and exposed from the first surface of the dielectric layer, and electrically connected to the semiconductor chip; a plurality of ball-implanting pads formed on the second surface of the dielectric layer; and a plurality of conductive pillars formed in the dielectric layer, each of the conductive pillars having a first end electrically connected to one of the ball-implanting pads and a second end opposing the first end and electrically connected to one of the conductive pads. Through the installation of the conductive pillars, it is not necessary for the ball-implanting pads to be associated with the conductive pads in position, and the semiconductor package thus has an adjustable ball-implanting area.

Abstract: A substrate for a semiconductor package includes a ball land disposed on one surface of an insulating layer. A solder resist is applied to the surface of insulating layer while leaving the ball land exposed. A coating film is applied on the exposed surface of the ball land. The coating film includes a high molecular compound having metal particles. In the substrate having the ball land with the coating film formed thereon, it is not necessary to subject the substrate to a UBM formation process.

Abstract: Disclosed is a mold array process (MAP) method to encapsulate cut edges of substrate units. A substrate strip includes a plurality of substrate units arranged in a matrix. Scribe lines are defined between adjacent substrate units and at the peripheries of the matrix where pre-cut grooves are formed along the scribe lines with a width greater than the width of the scribe lines. An encapsulant is formed on the matrix of the substrate strip to continuously encapsulate the substrate units and the scribe lines to enable the encapsulant to fill into the pre-cut grooves to further encapsulate the cut edges of the substrate units. The cut edges of the substrate units are still encapsulated by the encapsulant even after singulation processes where substrate units are singulated into individual semiconductor packages to prevent the exposure of the plated traces of the substrate units to enhance the moisture resistance capability of the semiconductor packages.

Abstract: The invention provides a package structure, including: a substrate, wherein the substrate has a first surface and a second surface, and a first pattern metal layer is formed on the first surface, and a second patterned metal layer is formed on the second surface, and the substrate has a plurality of vias formed therein, wherein the first patterned metal layer is electrically connected to the second patterned metal layer through the plurality of vias, and the widths of the plurality of vias are gradually increased from the first surface to the second surface; a chip formed on the first surface of the substrate; and a molding material is formed on the substrate and the chip, wherein the chip is covered by the molding material.

Abstract: A method of manufacturing a package module structure of a high power device using a metal substrate that can improve reliability by minimizing stress due to a thermal expansion coefficient difference between a metal substrate and a semiconductor device includes: preparing a metal substrate; forming an oxide layer by selectively anodizing the metal substrate; forming a mounting groove for mounting a semiconductor device by etching a portion of the oxide layer; installing a shock-absorbing substrate that is made of a material having a thermal expansion coefficient in a range similar to a material of a semiconductor device to expose the entirety or a portion of a bottom portion of the mounting groove; mounting the semiconductor device in the shock-absorbing substrate exposed to the mounting groove; and electrically connecting an electrode terminal of the semiconductor device and an electrode line formed in an upper surface of the oxide layer.

Abstract: A method of manufacturing an integrated circuit package. The method includes attaching a first surface of a semiconductor die to a thermally and/or electrically conductive substrate, forming a plurality of die connectors on a second surface of the semiconductor die, and encapsulating the semiconductor die and the plurality of die connectors in an encapsulant material. The method also includes removing a portion of the encapsulant material to expose one or more of the plurality of die connectors, thereby forming a routing surface. The method further includes forming a plurality of conductive traces on the routing surface. Each of the plurality of conductive traces is characterized by a first portion in electrical communication with one of the plurality of die connectors and a second portion in electrical communication with a package connector.

Abstract: A semiconductor device of the present invention comprises a semiconductor element, a first metal body formed on a back surface of the semiconductor element, a first insulating layer formed on a back surface of the first metal body, a second metal body formed on a back surface of the first insulating layer, a third metal body formed on a front surface of the semiconductor element, a second insulating layer formed on a front surface of the third metal body and a fourth metal body formed on a front surface of the second insulating layer, and the second metal body is thinner than the first metal body and the fourth metal body is thicker than the third metal body. With this structure, it is possible to increase the heat radiation performance while suppressing stress to be exerted on the semiconductor element.

Abstract: The present invention discloses a semiconductor device package and the method for the same. The method includes preparing a first substrate and a second substrate; opening a die opening window through the second substrate by using laser or punching; preparing an adhesion material; attaching the first substrate to the second substrate by the adhesion material; aligning a die by using the aligning mark of the die metal pad and attaching the die onto the die metal pad with force by the adhesion material; forming a first dielectric layer on top surfaces of the second substrate and the die and pushing the first dielectric layer into gap between the side wall of the die and the side wall of the die opening window under vacuum condition; opening a plurality of via openings in the first dielectric layer; and forming a redistribution layer in the plurality of via openings and on the first dielectric layer.

Abstract: A process for closure of at least one cavity intended to encapsulate or be part of a microelectronic device, comprising the following steps: a) Producing a cavity in a first substrate comprising a first layer traversed by an opening forming an access to the cavity; b) Producing a portion of bond material around the opening, on a surface of the first layer located on the side opposite the cavity; c) Producing, on a second substrate, a portion of fusible material, with a deposition of the fusible material on the second substrate and the use of a mask; d) Placing the portion of fusible material in contact with the portion of bond material; e) Forming a plug for the opening, which adheres to the portion of bond material, by melting and then solidification of the fusible material; f) Separating the plug and the second substrate.

Abstract: The yield of semiconductor devices is improved. In an upper die of a resin molding die including a pair of the upper die and a lower die, by lengthening the radius of the cross section of an inner peripheral surface of a second corner part facing an injection gate of a cavity more than that of the other corner part, a void contained in a resin in resin injection can be pushed out into an air vent without allowing the void to remain in the second corner part of the cavity. Consequently, the occurrence of the void in the cavity can be prevented and then the occurrence of the appearance defect of the semiconductor device can be prevented.

Abstract: A module including a carrier and a semiconductor chip applied to the carrier. An external contact element is provided having a first portion and a second portion extending perpendicular to the first portion, wherein a thickness of the second portion is smaller than a thickness of the carrier.

Abstract: A semiconductor wafer has a plurality of first semiconductor die. A first conductive layer is formed over an active surface of the die. A first insulating layer is formed over the active surface and first conductive layer. A repassivation layer is formed over the first insulating layer and first conductive layer. A via is formed through the repassivation layer to the first conductive layer. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is mounted to a temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A second insulating layer is formed over the repassivation layer and encapsulant. A second conductive layer is formed over the repassivation layer and first conductive layer. A third insulating layer is formed over the second conductive layer and second insulating layer. An interconnect structure is formed over the second conductive layer.

Abstract: An integrated circuit die comprises a device layer comprising a plurality of semiconductor devices; an interconnect layer comprising a plurality of interconnect paths connecting the semiconductor devices and embedded in a dielectric material; and a plurality of hard nanoparticles embedded in the dielectric material of the interconnect layer, the hard nanoparticles having a hardness greater than a hardness of the dielectric material and of a hardness of the interconnect paths.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a base substrate; mounting an organic chip assembly on the base substrate, the organic chip assembly includes providing an assembly integrated circuit embedded in an organic cover, the organic cover having a through via, and the organic chip assembly having a vertical assembly side; forming a molded underfill encapsulating the vertical assembly side, and between the organic chip assembly and the base substrate; and removing a portion of the organic chip assembly and the molded underfill for forming a planarized assembly surface.

Abstract: A semiconductor package includes: a dielectric layer having opposing first and second surfaces and side surfaces; a copper wiring layer disposed on the first surface of the dielectric layer and having extension pads; a surface processing layer disposed on the wiring layer; a semiconductor chip disposed on the wiring layer and electrically connected to the surface processing layer; and an encapsulant disposed on the first surface of the dielectric layer for encapsulating the semiconductor chip, the wiring layer and the surface processing layer while exposing the second surface of the dielectric layer. Further, vias are disposed between the side surfaces of the dielectric layer and the encapsulant such that the extension pads are exposed from the vias so as for solder balls to be disposed thereon. Due to improved electrical connection between the copper and solder materials, the electrical connection quality of the package is improved.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a package paddle; forming a lead adjacent to the package paddle; depositing a lead conductive cap on the lead, the lead conductive cap includes a nickel layer having a thickness between 2.55 ?m to 8.00 ?m deposited on the lead, a palladium layer deposited on the nickel layer, and a gold layer deposited on the palladium layer; mounting an integrated circuit over the package paddle; attaching an electrical connector between the lead conductive cap and the integrated circuit; and forming an encapsulation over the integrated circuit, a portion of the lead, and a portion of the package paddle.

Abstract: The present disclosure relates to the field of fabricating microelectronic device packages and, more particularly, to microelectronic device packages having bumpless build-up layer (BBUL) designs, wherein at least one secondary device is disposed within the thickness (i.e. the z-direction or z-height) of the microelectronic device of the microelectronic device package.

Abstract: When metal junction between a first electrode and a second electrode is executed as ultrasonic bonding between metals including at least copper, the ultrasonic bonding is performed in a state that a contact interface between the first electrode and the second electrode is covered with a bonding auxiliary agent. As a result, formation of oxide at a bonding interface between the first electrode and the second electrode due to execution of the ultrasonic bonding can be suppressed. Therefore, while a desired bonding strength is ensured, ultrasonic bonding with copper used for the first electrode or the second electrode can be fulfilled and cost cuts in mounting of semiconductor devices can be achieved.

Abstract: A hermetically sealed integrated circuit package that includes a cavity housing a semiconductor die, whereby the cavity is pressurized during assembly and when formed. The invention prevents the stress on a package created when the package is subject to high temperatures at atmospheric pressure and then cooled from reducing the performance of the die at high voltages. By packaging a die at a high pressure, such as up to 60 PSIG or more, in an atmosphere with an inert gas, and providing a large pressure in the completed package, the dies are significantly less likely to arc at higher voltages, allowing the realization of single die packages operable up to at least 1200 volts or more. Moreover, the present invention is configured to employ brazed elements compatible with Silicon Carbide dies which can be processed at higher temperatures.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a lead array having an innermost space with an innermost lead having an inner lead profile different around an inner non-horizontal side of the innermost lead; forming a middle lead having a middle lead profile the same around a lead side of the middle lead; placing an integrated circuit in the innermost space adjacent to the innermost lead; and forming a package encapsulation over the integrated circuit, the innermost lead, and the middle lead.

Abstract: A method includes providing a carrier; applying a dielectric layer to the carrier; applying a metal layer to the dielectric layer; placing a first semiconductor chip on the metal layer with contact pads of the first semiconductor chip facing the metal layer; covering the first semiconductor chip with an encapsulation material; and removing the carrier.

Abstract: A semiconductor device has a first semiconductor die containing a low pass filter and baluns. The first semiconductor die has a high resistivity substrate. A second semiconductor die including a bandpass filter is mounted to the first semiconductor die. The second semiconductor die has a gallium arsenide substrate. A third semiconductor die including an RF switch is mounted to the first semiconductor die. A fourth semiconductor die includes an RF transceiver. The first, second, and third semiconductor die are mounted to the fourth semiconductor die. The first, second, third, and fourth semiconductor die are mounted to a substrate. An encapsulant is deposited over the first, second, third, and fourth semiconductor die and substrate. A plurality of bond wires is formed between the second semiconductor die and first semiconductor die, and between the third semiconductor die and first semiconductor die, and between the first semiconductor die and substrate.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a substrate; molding a first encapsulation above the substrate; forming a via through the first encapsulation; mounting an integrated circuit above the substrate and between sides of the first encapsulation; and forming a second encapsulation covering the integrated circuit and the first encapsulation.

Abstract: A method for manufacturing a semiconductor apparatus includes: forming a protrusion made of a conductor on each of the electrodes provided on a semiconductor wafer top face side of a plurality of semiconductor devices formed in a semiconductor wafer; making a trench in the top face between the plurality of semiconductor devices; filling an insulator into a gap between the protrusions and into the trench to form a sealing member; grinding a bottom face of the semiconductor wafer opposing the top face until the sealing member being exposed to divide the semiconductor wafer into each of the semiconductor devices; forming a first lead made of a conductor on each of the protrusions, the first lead forming a portion of a first external electrode; forming a conductive material layer directly to form a second lead on the bottom face of the plurality of semiconductor devices, the second lead forming the second external electrode; and cutting the sealing member between the plurality of semiconductor devices to separate

Abstract: The semiconductor module is provided that includes a semiconductor housing and a plurality of integrated circuit dice positioned within the housing. The semiconductor module also includes a programmable memory device positioned within the housing and electrically coupled to the plurality of integrated circuit dice. The programmable memory device is programmable to identify the integrated circuit dice that meet a predetermined standard, such as an operating frequency requirement, or a core timing grade. Further, a method is provided for accessing a semiconductor module. The above mentioned housing is provided to enclose the plurality of integrated circuit dice and the programmable memory device. The integrated circuit dice of the plurality of integrated circuit dice that meet a predetermined standard are then identified. The programmable memory device is subsequently programmed to identify the selected integrated circuit dice.