Abstract: Disclosed herein is a semiconductor chip that includes: a semiconductor chip body including a semiconductor substrate and a circuit element layer provided on a main surface of the semiconductor substrate, the circuit element layer including a plurality of circuit elements; first to fourth penetrating electrodes penetrating the semiconductor chip body; a first conductive path electrically connected between the first penetrating electrode and the second penetrating electrode without being in contact with any one of the circuit elements; a second conductive path electrically connected between the first penetrating electrode and the third penetrating electrode without being in contact with any one of the circuit elements; and a third conductive path electrically connected between the second penetrating electrode and the fourth penetrating electrode without being in contact with any one of the circuit elements.

Abstract: A method of evaluating an epitaxial growing process includes forming a mold layer on each of a plurality of substrates, forming a photoresist pattern on each mold layer, the photoresist pattern having opening portions, a total area of a bottom portion of the opening portions being different for each substrate, patterning each mold layer to expose a surface portion of the substrate to form an evaluation pattern on each substrate, evaluation patterns including opening portions corresponding to the opening portion in the photoresist pattern, determining substrate opening ratios for each substrate based on the opening portions in the evaluation pattern thereon, the substrate opening ratios being different for each substrate, performing a selective epitaxial process on each substrate to form an epitaxial layer, and evaluating characteristics of the epitaxial layer for each substrate to determine an optimal substrate opening ratio.

Abstract: A semiconductor test pad interconnect structure with integrated die-separation protective barriers. The interconnect structure includes a plurality of stacked metal layers each having an electrically conductive test pad separated from other test pads by a dielectric material layer. In one embodiment, at least one metallic via bar is embedded into the interconnect structure and electrically interconnects each of the test pads in the metal layers together. The via bar extends substantially along an entire first side defined by each test pad in some embodiments. In other embodiments, a pair of opposing via bars may be provided that are arranged on opposite sides of a die singulation saw cut line defined in a scribe band on a semiconductor wafer.

Abstract: Methods of fabricating integrated circuit devices utilize fuse elements to support sequential testing of vertically-integrated test elements during fabrication. These methods include forming a first test element, a first fuse and a first test pad electrically connected by the first fuse to the first test element, on a substrate. The first test element is tested by passing a first current between the first test element and first test pad and through the first fuse. The first fuse is then “cut” by increasing an impedance of the first fuse, which may include breaking the first fuse to create an electrical “open” (infinite impedance) or greatly increasing a resistance of the first fuse (e.g., by narrowing the fuse through electromigration). A second test element and a second test pad, which is electrically connected to the second test element and the first test pad, are then formed on the substrate.

Abstract: A method of fabricating a chip may include the step of providing a first electrical part. The method may also include the step of forming a shell with the first electrical part embedded in a first side portion of the shell and a cavity in a second side portion of the shell. The method may include the step of testing the embedded first electrical part to determine whether the first electrical part is defective or functional. The method may also include the steps of providing a second electrical part, inserting the second electrical part within the cavity of the shell second side portion, establishing electrical communication between the first and second electrical parts if a test result of the first electrical part indicates that the first electrical part is functional, and finishing the chip. Also, the method may include the step of rejecting the first electrical part if the test result of the first electrical part indicates that the first electrical part is defective.

Abstract: An electrical characteristics test for a semiconductor integrated circuit using a Kelvin contact method can be conducted in a pre-process without obstructing the reduction in size of a semiconductor chip or without complicating the circuit design. A probe card in a testing apparatus includes probes for Kelvin contact, the probes for Kelvin contact including a coil probe and a POGO pin probe disposed inside the coil probe, and a probe for two-terminal measurement. Electrode pads formed in each chip area over a wafer are in a relation of A=B<2A, given that the area of one of the electrode pads with which the probe for Kelvin contact comes into contact is B and the area of the other electrode pad with which the probe for two-terminal measurement comes into contact is A.

Abstract: Alignment data from an exposure tool suitable for exposing a plurality of semiconductor wafers are provided, the alignment data including alignment values applied by the exposure tool to respective ones of the plurality of semiconductor wafers at a plurality of measured positions.

Abstract: A system and method employ at least one semiconductor device, or an arrangement of insulating and metal layers, having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic acid strand proximate to the detecting region. A method for manufacturing forms such a semiconductor device. The system and method can be used for sequencing individual nucleotides or bases of ribonucleic acid (RNA) or deoxyribonucleic acid (DNA). The detecting region permits a current to pass between the two doped regions in response to the presence of the component of the polymer, such as a base of a DNA or RNA strand. The current has characteristics representative of the component of the polymer, such as characteristics representative of the detected base of the DNA or RNA strand.

Abstract: A method for aligning a wafer stack includes providing a wafer stack including a top wafer with a top mark and a bottom wafer with a bottom mark in particular the top mark and the bottom mark capable of corresponding to each other; adjusting a relative position between the top wafer and the bottom wafer so that the top mark and the bottom mark are in contact with each other; applying an electrical signal on the top mark to obtain an electrical reading and optimizing the electrical reading to substantially align the wafer stack.

Abstract: P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.

Abstract: System and method for test structure on a wafer. According to an embodiment, the present invention provides a test structure for testing a chip. For example, the test structure and the chip are manufactured on a same substrate material and the testing being conducted is in a temperature-controlled environment. The test structure includes a top structure positioned above the chip. For example, the top structure can be characterized by a first surface area. The top structure includes a first metal material occupying less than 60% of the surface area. The test structure also includes a bottom structure positioned below the chip. For example, the bottom structure can be characterized by a second surface area. The second surface area is substantially equal to the first surface area. The bottom structure includes a first silicon material. The first silicon material occupies substantially all of the second surface area.

Abstract: Integrated circuit layers to be stacked on top of each other are formed with a plurality of inspection rectifier device units, respectively. The plurality of inspection rectifier device units including rectifier devices are connected between a plurality of connection terminals and a positive power supply lead and a grounding lead and emit light in response to a current. After electrically connecting the plurality of connection terminals to each other, a bias voltage is applied between the positive power supply lead and the grounding lead, and the connection state between the connection terminals is inspected according to a light emission of the inspection rectifier device unit. This makes it possible to inspect, in a short time every time a layer is stacked, whether or not an interlayer connection failure exists in a semiconductor integrated circuit device constructed by stacking a plurality of integrated circuit layers in their thickness direction.

Abstract: A method and apparatus for determining overlay includes an array of electronic devices having structures formed in a plurality of layers and such that a device on a first end of the array includes an offset from a position of a device on a second end of the array. A measurement device is configured to measure electrical characteristics of the devices in the array to determine a transition position between the electrical characteristics. A comparison device is configured to determine an overlay between the layers based on a device associated with the transition position.

Abstract: A surface mount type semiconductor device is disclosed. The semiconductor device has testing lands on a lower surface of a wiring substrate with a semiconductor chip mounted thereon. Lower surface-side lands with solder balls coupled thereto respectively and testing lands with solder balls not coupled thereto are formed on a lower surface of a wiring substrate. To suppress the occurrence of contact imperfection between the testing lands and land contacting contact pins provided in a probe socket, the diameter of each testing land is set larger than the diameter of each lower surface-side land. Even when the wiring substrate is reduced in size, electrical characteristic tests using the testing lands can be done with high accuracy.

Abstract: A leakage measurement structure for through substrate vias which includes a semiconductor substrate; a plurality of through substrate vias in the semiconductor substrate extending substantially through the semiconductor substrate; and a leakage measurement structure located in the semiconductor substrate. The leakage measurement structure includes a plurality of substrate contacts extending into the semiconductor substrate; a plurality of sensing circuits connected to the plurality of through substrate vias and to the plurality of the substrate contacts, the plurality of sensing circuits providing a plurality of outputs indicative of current leakage from the plurality of through substrate vias; a built-in self test (BIST) engine to step through testing of the plurality of through substrate vias; and a memory coupled to the BIST engine to receive the outputs from the plurality of sensing circuits.

Abstract: A semiconductor structure including a test structure for detection of a gap in a conductive layer of the semiconductor structure includes a semiconductor substrate; the test structure, the test structure being located on the semiconductor substrate, the test structure comprising a multilayer gate stack, wherein the multilayer gate stack includes a single conductive layer region including: a gate dielectric located on the semiconductor substrate; the conductive layer located on the gate dielectric; and an undoped amorphous silicon layer located on the conductive layer; and wherein the test structure is configured to detect the presence of the gap in the conductive layer.

Abstract: A laser diode includes a junction surface configured to interface with an integrated optics slider. Cathode and anode electrical junctions are disposed on the junction surface. The cathode and anode electrical junctions are configured for electrical and mechanical coupling to the integrated optics slider. At least one test pad is disposed on the junction surface that is physically separate from and electrically coupled to one of the cathode and anode electrical junctions. The test pad is configured to be contacted by a test probe and is not configured for electrical or mechanical coupling to the integrated optics slider.

Abstract: The present disclosure provides a semiconductor manufacturing method. The method includes performing a first process to a first plurality of semiconductor wafers; determining a sampling rate to the first plurality of semiconductor wafers based on process quality; determining sampling fields and sampling points to the first plurality of semiconductor wafers; measuring a subset of the first plurality of semiconductor wafers according to the sampling rate, the sampling fields and the sampling points; modifying a second process according to the measuring; and applying the second process to a second plurality of semiconductor wafers.

Abstract: A semiconductor device comprises a plurality of transistor mismatch circuits formed on a semiconductor wafer; and a characterization circuit formed on the semiconductor wafer. The characterization circuit is coupled to receive input provided by the absolute value circuits simultaneously which themselves receive inputs from the mismatch circuits simultaneously and is configured to output a standard deviation of mismatch between transistors in the mismatch circuits.

Abstract: Provided is a test pattern structure for determining overlay accuracy in a semiconductor device. The test pattern structure includes one or more resistor structures formed by patterning a lower silicon layer. Each includes a zigzag portion with leads at different spatial locations. An upper pattern is formed and includes at least one pattern feature formed over the resistor or resistors. The portions of the resistor or resistors not covered by the upper pattern feature will become silicided during a subsequent silicidation process. Resistance is measured to determine overlay accuracy as the resistor structures are configured such that the resistance of the resistor structure is determined by the degree of silicidation of the resistor structure which is determined by the overlay accuracy between the upper and lower patterns.

Abstract: In embodiments of the current invention, methods of combinatorial processing and a test chip for use in these methods are described. These methods and test chips enable the efficient development of materials, processes, and process sequence integration schemes for semiconductor manufacturing processes. In general, the methods simplify the processing sequence of forming devices or partially formed devices on a test chip such that the devices can be tested immediately after formation. The immediate testing allows for the high throughput testing of varied materials, processes, or process sequences on the test chip. The test chip has multiple site isolated regions where each of the regions is varied from one another and the test chip is designed to enable high throughput testing of the different regions.

Abstract: A method for aligning a probe relative to a supporting substrate defining a first planar surface, an edge, and a first crystal plane includes the steps of masking the surface of the substrate to define an exposed area on the first surface at the edge; and etching, using an etch reagent, a recess in the exposed area, the recess defining first and second opposed sidewalls, an end wall remote from the edge, and a bottom wall. The method further includes the step of providing a probe substrate defining a second planar surface and a second crystal plane identical to the first crystal plane, and positioning the probe substrate so that the first and the second crystal planes are positioned identically when forming a probe from the probe substrate using the etch reagent, wherein the probe defines congruent surfaces to the first and second sidewalls.

Abstract: A thin-film transistor (TFT) substrate includes a base substrate, a test pad and a test pad line. The base substrate includes a display area including a data line and a TFT, a peripheral area including a common voltage line, and a test area disposed outside of the peripheral area. The test pad is disposed in the test area and electrically connected to the data line. The test pad line connects the data line with the test pad and crosses the common voltage line.

Abstract: In a disclosed good chip classifying method capable of classifying the good chips on a wafer, defective chips are divided into defective groups so that the defective chips contiguous to each other are placed into the same defective group based on the wafer test results; the defective group is judged as a defective chip concentrated distribution area when the number of the defective chips exceeds the prescribed value; a defective chip concentrated distribution nearby area including all the defective chips in the defective chip concentrated distribution area and nearby good chips is formed; and the good chips in the defective chip concentrated distribution nearby area are classified to have a chip index based on four directions (X and Y axis directions) on which the defective chips in the defective chip concentrated distribution area are disposed.

Abstract: A method includes providing on a substrate having at least two through substrate vias (“TSVs”) a plurality of test structures for de-embedding the measurement of the intrinsic characteristics of a device under test (DUT) including at least two of the TSVs; measuring the intrinsic characteristics [L] for a first and a second test structure on the substrate including two pads coupled with a transmission line of length L; using simultaneous solutions of ABCD matrix or T matrix form equations, and the measured intrinsic characteristics, solving for the intrinsic characteristics of the pads and the transmission lines; de-embedding the measurements of the third and fourth test structures using the intrinsic characteristics of the pads and the transmission lines; and using simultaneous solutions of ABCD matrix or T matrix form equations for BM_L and BM_LX, and the measured intrinsic characteristics, solving for the intrinsic characteristics of the TSVs.

Abstract: To provide a manufacturing method of a semiconductor device capable of placing a larger number of alignment marks for lithography and PCM and at the same time, preventing information leakage from the PCM. In a portion of a first scribe region sandwiched between first semiconductor chip regions, a first region and a second region are placed in parallel to each other. The first region is equipped with at least one monitor selected from a first monitor for electrically evaluating at least either one of an active element (such as transistor) and a passive element (such as resistor or capacitor), a second monitor for dimensional control, and a third monitor for measuring film thickness. In the second region, an alignment mark for lithography is placed. In the cutting step, the first region is cut off.

Abstract: A method for evaluating a cleanliness of a tool, the method includes: receiving a wafer; cleaning the wafer; placing the wafer into the tool for a predefined period; removing the wafer from the tool, performing a contact angle measurement and determining the cleanliness of the wafer.

Abstract: A probe is contacted to a test pad, without destroying the circuit formed in the chip at the time of a probe test. Therefore, a load jig, a pressing tool, an elastomer, an adhesion ring, and a plunger are made into one by fixation with a nut and a bolt. The elastic force of the spring installed between the spring retaining jig and the load jig acts so that the member used as these one may be depressed toward pad PD. The thrust transmitted from the spring in a plunger to a thin films sheet is used only for the extension of a thin films sheet.

Abstract: An incorrect position of a semiconductor wafer during thermal treatment in a process chamber heated by means of infrared emitters and transmissive to infrared radiation is identified, wherein the semiconductor wafer lies in a circular pocket of a rotating susceptor and is held at a predetermined temperature with the aid of the infrared emitters and a control system, and wherein thermal radiation is measured by a pyrometer, an amplitude of the fluctuations of the measurement signal is determined and an incorrect position of the semiconductor wafer is assumed if the amplitude exceeds a predetermined maximum value. The pyrometer is oriented such that the measurement spot detected by the pyrometer lies partly on the semiconductor wafer and partly outside the semiconductor wafer on the susceptor so that it is possible to identify an eccentric position of the semiconductor wafer within the pocket of the susceptor.

Abstract: In order to solve the above problem, provided is an electronic component having an authentication pattern formed on an exposed surface, in which the authentication pattern includes a base section including a resin and colored particles having a hue that can be identified in the base section, and the colored particles are dispersed so as to form dotted pattern in the base section.

Abstract: A technique for setting Vgg in an IC is disclosed. The technique includes specifying a design reliability lifetime for the IC, and a relationship between maximum gate bias and gate dielectric thickness for the IC sufficient to achieve the design reliability lifetime is established. The IC is fabricated and the gate dielectric thickness is measured. A maximum gate bias voltage is determined according to the gate dielectric thickness and the relationship between maximum gate bias and gate dielectric thickness, and a Vgg trim circuit of the IC is set to provide Vgg having the maximum gate bias voltage that will achieve the design reliability lifetime according to the measured gate dielectric thickness.

Abstract: An apparatus and method for electrical mask inspection is disclosed. A scan chain is formed amongst two metal layers and a via layer. One of the three layers is a functional layer under test, and the other two layers are test layers. A resistance measurement of the scan chain is used to determine if a potential defect exists within one of the vias or metal segments comprising the scan chain.

Abstract: Provided is a semiconductor chip in which a first rewiring connection part located in the peripheral electrode pad or relatively close to the peripheral electrode pad in the V/G line and a second rewiring connection part located relatively distant from the peripheral electrode pad in the V/G line and having a lower potential than the first rewiring connection part before formation of a rewiring line are connected by the rewiring line. The semiconductor chip includes an inspection part for wafer test in the second rewiring connection part, a part on the V/G line close to the second rewiring connection part and having a lower potential than the first rewiring connection part before the rewiring line formation, or a conductive part extended from the V/G line to a proximity of the second rewiring connection part and having a lower potential than the first rewiring connection part before the rewiring line formation.

Abstract: A packaged integrated circuit includes a substrate having a wire layout pattern and a solder mask layer. An integrated circuit attached to a surface of the substrate is electrically connected to the wire layout pattern. An encapsulation material covers at least the integrated circuit and the solder mask layer. One or more crack seal rings are disposed on the solder mask surface. The crack seal rings are copper traces with terminals that allow current to be applied to the traces. A broken trace (open circuit condition) is indicative of a crack in the package. Thus, electrical testing is performed to detect physical defects.

Abstract: The objective is to provide a random number generating device having a smaller circuit size and a smaller value of output bias. The random number generating device includes a pair of first and second current paths arranged in parallel with each other, and a pair of first and second fine particles, which can mutually exchange charges, and are located in the vicinity of the first and second current paths.

Abstract: A method of detecting manufacturing defects at a memory array may include disposing an active area of a first width in communication with a first conductive member of the memory array to define a grounded conductive member, disposing an isolation structure of a second width in communication with a second conductive member of the memory array to define a floating conductive member, and providing an alternating arrangement of floating and grounded conductive members including arranging a plurality of the grounded and floating conductive members adjacent to each other to define a sequence of alternating floating and grounded conductive members. A corresponding test device is also provided.

Abstract: A device for detecting electrical properties of a sample of an excitable material, in particular of a silicon wafer, comprises a microwave source for generating a microwave field, a resonance system which is coupled to the microwave source in a microwave-transmitting manner, the resonance system comprising a microwave resonator with at least one opening and a sample to be examined which is arranged next to the at least one opening, at least one excitation source which is arranged in the surroundings of the sample for controlled electrical excitation of the sample, and a measuring device for measuring at least one physical parameter of the resonance system.

Abstract: A device and method are provided for detecting stress migration properties of a semiconductor module mounted in a housing. A stress migration test (SMT) structure is formed in the semiconductor module. An integrated heating (IH) device is formed within or in direct proximity to the SMT structure. The SMT structure includes a first interconnect region in a first interconnect layer, a second interconnect region in a second interconnect layer, and a connecting region electrically connecting the interconnect regions through a first insulating layer. The IH device includes a heating interconnect region through which a heating current flows. The heating interconnect region is within or outside the first or second interconnect region or connecting region. When the heating current is applied, a measurement voltage is applied to the SMT structure, and a current through the SMT structure is measured to detect stress migration properties of the semiconductor module.

Abstract: Embodiments in accordance with the present invention relate to structures and methods allowing stress-induced electromigration to be tested in multiple interconnect metallization layers. An embodiment of a testing structure in accordance with the present invention comprises at least two segments of a different metal layer through via structures. Each segment includes nodes configured to receive force and sense voltages. Selective application of force and sense voltages to these nodes allows rapid and precise detection of stress-induced immigration in each of the metal layers.

Abstract: The variation in the contact pressures of the plurality of contact terminals to the plurality of chip electrodes is decreased. A thin-film sheet (first sheet) includes: a principal surface (contact-terminal formation surface) on which a plurality of contactors (contact terminals) are formed; and a rear surface positioned on an opposite side to the principal surface. Also, in the thin film sheet, a plurality of wirings and dummy wiring are arranged between the principal surface and the rear surface. A slit formed of an opening portion penetrating from the principal surface of the thin-film sheet to the rear surface thereof is formed along the wiring between the dummy wiring and the contactor arranged at an end of a contactor group (first contact terminal group) in which the plurality of contactors are aligned.

Abstract: A semiconductor device including: a base material portion that includes a semiconductor substrate and an insulating film that is formed on one face of the semiconductor substrate and on which a vertical hole is formed along the thickness direction of the semiconductor substrate; a vertical hole wiring portion that includes a vertical hole electrode formed on a side wall of the base material portion that forms the vertical hole; a metallic film that is formed within the insulating film and that is electrically connected to the vertical hole wiring portion; and a conductive protective film that is formed to be in contact with the metallic film within the insulating film and that is formed in a region that includes a contact region of a probe during a probe test that is performed in the middle of manufacture on a film face of the metallic film.

Abstract: A method of manufacturing a semiconductor device includes: forming a first pad and a second pad over a substrate; forming a first insulating film over the second pad without forming the first insulating film over the first pad; forming a metal film over the first pad and the second pad; forming an electrode over the first pad with the metal film interposed therebetween; selectively removing the metal film over the second pad; and removing the first insulating film over the second pad.

Abstract: A system and method of increasing productivity of OLED material screening includes providing a substrate that includes an organic semiconductor, processing regions on the substrate by combinatorially varying parameters associated with the OLED device production on the substrate, performing a first characterization test on the processed regions on the substrate to generate first results, processing regions on the substrate in a combinatorial manner by varying parameters associated with the OLED device production on the substrate based on the first results of the first characterization test, performing a second characterization test on the processed regions on the substrate to generate second results, and determining whether the substrate meets a predetermined quality threshold based on the second results.

Abstract: A body tie test structure and methods for its manufacture are provided. The transistor comprises a body-tied semiconductor on insulator (SOI) transistor formed in a layer of semiconductor material, the transistor comprising a cross-shaped gate structure with a substantially constant gate length L. An insulating blocking layer enables formation of a spacer region in the layer of semiconductor material separating the source and drain regions from the body tie region. A conductive channel with substantially the same inversion characteristics as the intrinsic transistor body connects the body tie to the intrinsic transistor body through the spacer region.

Abstract: A plurality of peripheral test structure substrate (PTSS) through vias is formed within a peripheral test structure substrate. A peripheral test structure layer and at least one functional layer are formed on one side of the plurality of the PTSS through vias. The other side of the plurality of the PTSS through vias is exposed throughout fabrication of the peripheral test structure layer and the at least one functional layer to provide access points for testing functionality of the various layers throughout the manufacturing sequence. C4 bonding may be performed after manufacture of all of the at least one functional layer is completed. A 3D assembly carrier or a C4 carrier substrate is not required since the peripheral test structure substrate has sufficient mechanical strength to support the peripheral test structure layer and the at least one functional layer.

Abstract: A plurality of peripheral test structure substrate (PTSS) through vias is formed within a peripheral test structure substrate. A peripheral test structure layer and at least one functional layer are formed on one side of the plurality of the PTSS through vias. The other side of the plurality of the PTSS through vias is exposed throughout fabrication of the peripheral test structure layer and the at least one functional layer to provide access points for testing functionality of the various layers throughout the manufacturing sequence. C4 bonding may be performed after manufacture of all of the at least one functional layer is completed. A 3D assembly carrier or a C4 carrier substrate is not required since the peripheral test structure substrate has sufficient mechanical strength to support the peripheral test structure layer and the at least one functional layer.

Abstract: A display panel according to the present invention includes a first substrate including a first electrode portion and a connecting portion electrically connecting the first electrode portion to an external interconnection; a second substrate including a second electrode portion and disposed to face the first substrate; and a common transfer material electrically connecting the first electrode portion and the second electrode portion. The second electrode portion includes a detecting portion for detecting damage to the second substrate. The detecting portion is electrically connected to the first electrode portion and the external interconnection through the common transfer material. By the configuration as described above, it becomes possible to easily detect cracking, chipping and the like in the second substrate having no direct connection to the external interconnection.

Abstract: A lead frame is provided that includes a base metal, a plated layer provided on a part of the surface of the base metal, and a thermal history monitor portion that discolors under heat load applied thereto, provided at another part of the base metal surface. A method of manufacturing a semiconductor device includes an assembly process including mounting a semiconductor chip on the lead frame, performing a wire bonding process thereby connecting the semiconductor chip and the lead frame, and encapsulating with a resin the wire-bonded semiconductor chip and the lead frame, and then performing an appearance check after the assembly process to inspect whether the thermal history monitor portion has discolored under heat load applied through the assembly process, thereby deciding whether an abnormality has emerged through the thermal history.

Abstract: An Electrostatic Post Exposure Bake (EPEB) subsystem comprising an Electrostatic Bake Plate (EBP) configured in a processing chamber in an EPEB subsystem, wherein the EPEB wafer comprises an exposed masking layer having unexposed regions and exposed regions therein and the EPEB wafer is developed using the EBP.

Abstract: A process is provided for fabricating a wafer including a plurality of chips separated by scribe lines. The method includes locking at least one chip on the wafer using a secret key, and writing the secret key into at least one memory present on the wafer.