Having Diverse Electrical Device Patents (Class 438/23)
  • Publication number: 20140061595
    Abstract: An OLED display device is provided. The OLED display device includes a substrate segmented into a plurality sub-pixel regions, a thin film transistor formed in each of the sub-pixel regions, an insulating layer and a planarizion layer formed on the thin film transistor, a semitransparent reflective layer selectively formed in each sub-pixel region on the planarizion layer, a protective layer formed on the semitransparent reflective layer, an anode electrode formed in a region corresponding to the semitransparent reflective layer on the protective layer and connected to the thin film transistor, an organic light emitting layer connected to the anode electrode, and emitting light, and a cathode electrode formed on the organic light emitting layer.
    Type: Application
    Filed: December 3, 2012
    Publication date: March 6, 2014
    Applicant: LG DISPLAY CO., LTD.
    Inventors: Se June Kim, Joon Suk Lee, Yong Chul Kim, Sung Bin Shim
  • Publication number: 20140062849
    Abstract: An electrical control system for controlling the electrical voltage applied to each of multiple pixel electrodes on one side of an electrophoretic display comprises (1) a substrate having a plurality of spaced parallel aluminum conductors on one side of the substrate; (2) a thin oxide layer on spaced pixel regions of each of the aluminum conductors to form a gate insulator over each of the spaced pixel regions; (3) a field-effect transistor (FET) formed on the thin oxide layer in each of the spaced pixel regions, the FET having a source terminal, a drain terminal, and a gate connected to the aluminum conductor on which the FET is formed; and (4) a CMOS controller connected directly to each of the aluminum conductors and adapted to supply gate control signals for the FETs. The controller supplies a separate gate control signal for each of the aluminum conductors.
    Type: Application
    Filed: March 15, 2013
    Publication date: March 6, 2014
    Applicant: TAGNETICS, INC.
    Inventor: Kenneth W. Kayser
  • Publication number: 20140054555
    Abstract: The organic light emitting display device includes a substrate, a thin film transistor formed on the substrate, a protective film formed to cover the thin film transistor, a color filter layer formed on the substrate exposed by removing a gate insulating layer of the thin film transistor and the protective film, an overcoat layer formed over the entire surface of the substrate to cover the color filter layer and the protective film, a drain contact hole exposing the thin film transistor by selectively removing the protective film and the overcoat layer, and a first electrode connected to the thin film transistor through the drain contact hole on the overcoat layer, a white organic light emitting layer formed on the first electrode, and a second electrode formed to cover the white organic light emitting layer.
    Type: Application
    Filed: December 20, 2012
    Publication date: February 27, 2014
    Applicant: LG DISPLAY CO., LTD.
    Inventors: Eun-Ah Kim, Joon-Suk Lee
  • Patent number: 8659029
    Abstract: A low contact resistance semiconductor structure includes a substrate, a semiconductor stacked layer, a low contact resistance layer and a transparent conductive layer. The low contact resistance layer is formed on one side of a P-type GaN layer of the semiconductor stacked layer. The low contact resistance layer is formed at a thickness smaller than 100 Angstroms and made of a material selected from the group consisting of aluminum, gallium, indium, and combinations thereof. Through the low contact resistance layer, the resistance between the P-type GaN layer and transparent conductive layer can be reduced and light emission efficiency can be improved when being used on LEDs. The method of fabricating the low contact resistance semiconductor structure of the invention forms a thin and consistent low contact resistance layer through a Metal Organic Chemical Vapor Deposition (MOCVD) method to enhance matching degree among various layers.
    Type: Grant
    Filed: November 21, 2011
    Date of Patent: February 25, 2014
    Assignee: Lextar Electronics Corporation
    Inventors: Te-Chung Wang, Fu-Bang Chen, Hsiu-Mu Tang
  • Publication number: 20140042402
    Abstract: An organic light emitting display device may include a first substrate, a first electrode disposed on the first substrate, a pixel defining layer disposed on the first electrode and the first substrate, an organic light emitting structure disposed on the first electrode, a second electrode disposed on the organic light emitting structure and the pixel defining layer, a second substrate disposed on the second electrode, etc. The pixel defining layer may include a fine uneven structure positioned in the display and the non-display regions. The organic light emitting structure may be substantially uniformly formed on the first electrode through the pixel defining layer having the fine uneven structure, so that an organic light emitting display device may exhibit increased lifetime and may show improved image quality.
    Type: Application
    Filed: March 11, 2013
    Publication date: February 13, 2014
    Applicant: SAMSUNG DISPLAY CO., LTD.
    Inventors: Valeriy PRUSHINSKIY, Min-Soo KIM, Won-Sik HYUN, Heung-Yeol NA, Sang-Woo PYO
  • Patent number: 8642379
    Abstract: A method of making a top-gate organic thin film transistor, comprising forming source and drain contacts on a substrate; oxidizing portions of the source and drain contacts; depositing an organic semiconductor layer to form a bridge between the oxidized portions of the source and drain contacts; depositing a gate insulating layer over the organic semiconductor layer; and forming a gate electrode over the gate insulating layer.
    Type: Grant
    Filed: April 3, 2008
    Date of Patent: February 4, 2014
    Assignees: Cambridge Display Technology Limited, Panasonic Corporation
    Inventors: Sadayoshi Hotta, Jeremy Henley Burroughes, Gregory Lewis Whiting
  • Patent number: 8643053
    Abstract: Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other.
    Type: Grant
    Filed: November 21, 2012
    Date of Patent: February 4, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: HeeYoung Beom, SungKyoon Kim, MinGyu Na, HyunSeoung Ju
  • Publication number: 20140027720
    Abstract: An organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes: an active layer that is formed by patterning a semiconductor layer formed by laser crystallization; a gate electrode that is disposed to correspond to a channel area of the active layer; a first insulating layer that is disposed between the active layer and the gate electrode; a second insulating layer that is disposed on the gate electrode; and first test patterns that are formed on the second insulating layer and contact source and drain regions of the active layer and the gate electrode, respectively.
    Type: Application
    Filed: November 9, 2012
    Publication date: January 30, 2014
    Applicant: SAMSUNG DISPLAY CO., LTD.
    Inventors: Sung-Ho Kim, Min-Chul Shin, Do-Young Kim
  • Publication number: 20140028686
    Abstract: This disclosure provides systems, methods and apparatus for encapsulating a display device. In one aspect, an interferometric modulator (IMOD) is formed on a substrate. The IMOD includes an absorbing layer separated from the substrate, a reflective layer between the absorbing layer and the substrate, and an optical gap between the absorbing layer and the reflective layer. One or more thin film encapsulation layers hermetically seal the IMOD between the one or more thin film encapsulation layers and the substrate. In another aspect, an optical or functional layer can be formed over the one or more thin film encapsulation layers.
    Type: Application
    Filed: July 27, 2012
    Publication date: January 30, 2014
    Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.
    Inventors: Rihui He, Marek Mienko, Alok Govil, Tsongming Kao
  • Patent number: 8637894
    Abstract: In an organic light-emitting display apparatus and a method of manufacturing the same, a pad region of the organic light-emitting display apparatus comprises a protrusion layer including a plurality of protrusion portions formed on a substrate so as to protrude, a pad lower electrode and a pad upper electrode, the pad lower electrode including a protrusion portion formed along a protrusion outline of the protrusion layer and a flat portion formed along the substrate, and the pad upper electrode being formed on the flat portion of the pad lower electrode. A source/drain electrode layer is formed on the pad upper electrode, an organic layer is formed on the source/drain electrode layer, and a counter electrode layer is formed on the protrusion portion of the pad lower electrode and the organic layer. The counter electrode layer follows the protrusion outline of the protrusion layer on the protrusion portion.
    Type: Grant
    Filed: May 3, 2011
    Date of Patent: January 28, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yul-Kyu Lee, Chun-Gi You, Sun Park, Jong-Hyun Park, Kwang-Hae Kim
  • Publication number: 20140014960
    Abstract: The thickness of a display device including a touch sensor is reduced. Alternatively, the thickness of a display device having high display quality is reduced. Alternatively, a method for manufacturing a display device with high mass productivity is provided. Alternatively, a display device having high reliability is provided. Stacked substrates in each of which a sufficiently thin substrate and a relatively thick support substrate are stacked are used as substrates. One surface of the thin substrate of one of the stacked substrates is provided with a layer including a touch sensor, and one surface of the thin substrate of the other stacked substrate is provided with a layer including a display element. After the two stacked substrates are attacked to each other so that the touch sensor and the display element face each other, the support substrate and the thin substrate of each stacked substrate are separated from each other.
    Type: Application
    Filed: July 10, 2013
    Publication date: January 16, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yoshiharu HIRAKATA, Kensuke YOSHIZUMI
  • Patent number: 8629425
    Abstract: A light emitting diode and a method of fabricating a light emitting diode, the diode has a first set of multiple quantum wells (MQWs), each of the MQWs of the first set comprising a wetting layer providing nucleation sites for quantum dots (QDs) or QD-like structures in a well layer of said each MQW; and a second set of MQWs, each of the MQWs of the second set formed so as to exhibit a photoluminescence (PL) peak wavelength shifted compared to the MQWs of the first set.
    Type: Grant
    Filed: September 8, 2006
    Date of Patent: January 14, 2014
    Assignee: Agency for Science, Technology and Research
    Inventors: Chew Beng Soh, Soo Jin Chua, Haryono Hartono
  • Publication number: 20140008618
    Abstract: An organic light emitting display device includes a substrate, a thin film transistor on the substrate, an organic light emitting element including a first electrode connected to the thin film transistor, an organic light emitting layer on the first electrode, and a second electrode on the organic light emitting layer, and a pixel definition film disposed on the substrate to expose a part of the first electrode. The pixel definition film includes nanoparticles that change a path of light emitted from the organic light emitting layer.
    Type: Application
    Filed: January 23, 2013
    Publication date: January 9, 2014
    Inventors: Jae Ik LIM, Won Sang PARK
  • Publication number: 20140008668
    Abstract: To provide a method for fabricating a light-emitting device using flexible glass which is capable of withstanding a process temperature higher than or equal to 500° C., and the light-emitting device. A second substrate is attached to a support substrate using an adsorption layer. The second substrate is bonded to a backplane substrate provided with a transistor and a light-emitting element. The backplane substrate includes a separation layer and a buffer layer. A first substrate is separated from the backplane substrate by separation between the separation layer and the buffer layer. A flexible third substrate is bonded, using a second adhesive layer, to a surface of the buffer layer exposed by the separation. The support substrate is separated from the second substrate by separation between the second substrate and the adsorption layer.
    Type: Application
    Filed: June 25, 2013
    Publication date: January 9, 2014
    Inventor: Yoshiharu HIRAKATA
  • Publication number: 20140004630
    Abstract: A heterostructure containing IC and LED and a method of fabricating. An IC and an LED are established with the IC having a first electric-conduction block and a first connection block. The IC electrically connects to the first electric-conduction block. A first face of the LED has a second electric-conduction block and a second connection block. The LED is electrically connected to the second electric-conduction block. The first electric-conduction block and the first connection block are respectively joined to the second electric-conduction block and the second connection block, and the first electric-conduction block are electrically connected with the second electric-conduction block to form a heterostructure. The heterostructure provides functions of heat radiation and electric communication for IC and LED.
    Type: Application
    Filed: September 6, 2013
    Publication date: January 2, 2014
    Applicant: National Chiao Tung University
    Inventors: KUAN-NENG CHEN, CHENG-TA KO, WEI-CHUNG LO
  • Publication number: 20130341607
    Abstract: Discussed is a method of fabricating an organic light emitting diode display device capable of simplifying a manufacturing process by forming a photoresist pattern to cover a metal pattern to prevent a hole common layer and an electron common layer from being formed on the metal pattern.
    Type: Application
    Filed: June 19, 2013
    Publication date: December 26, 2013
    Inventors: Joon-Young HEO, Jong-Geun YOON
  • Publication number: 20130334502
    Abstract: The present invention provides a display panel and a method for manufacturing the same. The display panel comprises a substrate, pixels, active elements and storage capacitors, and the active elements and storage capacitors are disposed in the pixels. Each of the storage capacitors includes a first storage electrode and a second storage electrode, and the second storage electrode is disposed in a recess of an insulating layer and positioned to the first storage electrode. In the method for manufacturing the display panel, portions of the insulating layer are removed to form the recesses positioned to the first storage electrodes. The present invention can increase the aperture ratio of the pixels.
    Type: Application
    Filed: July 25, 2012
    Publication date: December 19, 2013
    Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventor: Yawei Liu
  • Publication number: 20130334562
    Abstract: A semiconductor device simplifies the manufacturing process. The device includes a protective chip which has a surface Zener diode to protect a light emitting chip with an LED formed therein from surge voltage. The protective chip is mounted over a wiring electrically coupled through a metal wire to an anode electrode coupled to a p-type semiconductor region whose conductivity type is the same as that of the semiconductor substrate of the chip. The anode electrode of the protective chip is electrically coupled to the back surface of the chip without PN junction, so even if the back surface is in contact with the wiring, no problem occurs with the electrical characteristics of the Zener diode. This eliminates the need to form an insulating film on the back surface of the chip to prevent contact between the back surface and the wiring, thus simplifying the manufacturing process.
    Type: Application
    Filed: May 23, 2013
    Publication date: December 19, 2013
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Ryo NIIDE, Shinichi YAMADA, Yasuharu ICHINOSE, Toshiya NOZAWA
  • Publication number: 20130330850
    Abstract: A method is provided to isolated conductive pads on top of a multi-layer polymer device structure. The method utilizes laser radiation to ablate conductive material and create a non-conductive path, electrically isolating the conductive pads. The process is self-limiting and incorporates at least one layer within the stack that absorbs the radiation at the required wavelength. The prevention of radiation degradation of the underlying layers is achieved, as absorption of radiation occurs primarily on the surface of the structure, but not in any of the radiation sensitive underlying layers of the electronic device. The method preferably uses low energy infrared radiation which has been shown to produce little debris and no device degradation.
    Type: Application
    Filed: June 19, 2013
    Publication date: December 12, 2013
    Inventors: Michael Banach, Thomas Meredith Brown, Carl Hayton
  • Patent number: 8603841
    Abstract: An object is to simplify a manufacturing process of a transistor, and to manufacture a light-emitting display device not only with a smaller number of photomasks compared to the number of photomasks used in the conventional method but also without an additional step. By using an intrinsic or substantially intrinsic high-resistance oxide semiconductor for a semiconductor layer included in the transistor, so that a step of processing the semiconductor layer into an island shape in each transistor can be omitted. Unnecessary portions of the semiconductor layer are etched away at the same time as a step of forming an opening in an insulating layer formed in an upper layer of the semiconductor layer, so that the number of photolithography steps is reduced.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: December 10, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Publication number: 20130313528
    Abstract: An organic light-emitting display apparatus includes a substrate, a display disposed on the substrate, an opposite substrate disposed to face the substrate with the display therebetween, a seal disposed between the substrate and the opposite substrate to couple the substrate to the opposite substrate and arranged around an outer circumference of the display such that the display is located inside the seal, and a support disposed between the substrate and the opposite substrate and arranged around a corner of the seal so that the corner of the seal is located inside the support.
    Type: Application
    Filed: October 11, 2012
    Publication date: November 28, 2013
    Applicant: SAMSUNG DISPLAY CO., LTD.
    Inventors: Dong-Yoon So, Ji-Eun Kim, Han-Soo Kim, Seon-Hee Kim
  • Publication number: 20130316474
    Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same is provided. Semiconductor layers of driving transistors located in two adjacent pixels included in the OLED display device may extend in different lengthwise directions. Thus, striped stains of the OLED display device can be improved.
    Type: Application
    Filed: August 5, 2013
    Publication date: November 28, 2013
    Inventors: Hong-Ro Lee, Sang-Jo Lee
  • Publication number: 20130301668
    Abstract: Use of semiconductor materials having a lattice constant of within +/?1.6% of 6.1 angstroms facilitates improved semiconductor device performance and new semiconductor structures, for example integration of field-effect devices and optoelectronic devices on a single wafer. High-mobility channels are enabled, improving device performance.
    Type: Application
    Filed: May 13, 2013
    Publication date: November 14, 2013
    Inventor: Yong-Hang Zhang
  • Patent number: 8575611
    Abstract: In the light-emitting display device according to the present invention, a side-contact structure is adopted in order to secure a TFT characteristic in a linear region (on-current). In a TFT configuring a switching transistor, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is increased. In contrast, in a TFT configuring a driving transistor, in order to maintain an on current, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is reduced. This configuration is manufactured using a half-tone mask. With this, it is possible to suppress the off-current in the switching transistor, while securing the on-current in the driving transistor.
    Type: Grant
    Filed: February 10, 2012
    Date of Patent: November 5, 2013
    Assignee: Panasonic Corporation
    Inventor: Yasuo Segawa
  • Patent number: 8574934
    Abstract: A method for forming an electronic device such as a passive color OLED display. Bottom electrodes are patterned onto a substrate in rows. Raised posts formed by photoresist are patterned into columns oriented orthogonally to the bottom row electrodes. One or more organic layers, such as R, G, B organic emissive layers are patterned over the raised posts and bottom electrodes using organic vapor jet printing (OVJP). An upper electrode layer is applied over the entire device and forms electrically isolated columnar electrodes due to discontinuities in the upper electrode layer created by the raised columnar posts. This permits patterning of the upper electrodes over the organic layers without using photolithography. A device formed by this method is also described.
    Type: Grant
    Filed: September 19, 2011
    Date of Patent: November 5, 2013
    Assignee: The Regents of the University of Michigan
    Inventors: Stephen Forrest, Gregory McGraw
  • Patent number: 8569736
    Abstract: A light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in that order; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer. The light emitting diode further includes a carbon nanotube layer. The carbon nanotube layer is enclosed in the interior of the first semiconductor layer. The carbon nanotube layer includes a number of carbon nanotubes.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: October 29, 2013
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Yang Wei, Shou-Shan Fan
  • Patent number: 8558217
    Abstract: A light emitting diode includes a substrate, a carbon nanotube layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on one side of the substrate in that order. The first semiconductor layer is adjacent to the substrate. The carbon nanotube layer is located between the first semiconductor layer and the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: October 15, 2013
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Yang Wei, Shou-Shan Fan
  • Patent number: 8552416
    Abstract: The present invention relates to a quantum dot light emitting diode device in which a hole transportation layer is formed after forming a quantum dot light emitting layer by a solution process by applying an inverted type quantum dot light emitting diode device for making free selection of a hole transportation layer material that enables easy injection of a hole to the quantum dot light emitting layer; and display device and method therewith.
    Type: Grant
    Filed: May 25, 2011
    Date of Patent: October 8, 2013
    Assignees: LG Display Co., Ltd., SNU R&DB Foundation
    Inventors: Young-Mi Kim, Ho-Cheol Kang, Ho-Jin Kim, Chang-Hee Lee, Kook-Heon Char, Seong-Hoon Lee, Jeong-Hun Kwak, Wan-Ki Bae, Dong-Gu Lee, Jae-Hoon Lim
  • Patent number: 8546156
    Abstract: A high efficiency light-emitting diode and a method for manufacturing the same are described. The high efficiency light-emitting diode comprises: a permanent substrate; a first contact metal layer and a second contact metal layer respectively deposed on two opposite surfaces of the permanent substrate; a bonding layer deposed on the second contact metal layer; a diffusion barrier layer deposed on the bonding layer, wherein the permanent substrate, the bonding layer and the diffusion barrier layer are electrically conductive; a reflective metal layer deposed on the diffusion barrier layer; a transparent conductive oxide layer deposed on the reflective metal layer; an illuminant epitaxial structure deposed on the transparent conductive oxide layer, wherein the illuminant epitaxial structure includes a first surface and a second surface opposite to the first surface; and a second conductivity type compound electrode pad deposed on the second surface of the illuminant epitaxial structure.
    Type: Grant
    Filed: September 3, 2010
    Date of Patent: October 1, 2013
    Assignee: Epistar Corporation
    Inventor: Schang-Jing Hon
  • Patent number: 8546839
    Abstract: A light emitting diode includes a substrate, a first semiconductor layer, an active layer and a second semiconductor layer. The first semiconductor layer, the active layer and the second semiconductor layer are stacked on one side of the substrate in that order. The first semiconductor layer is oriented to the substrate. A number of channels are defined between the first semiconductor layer and the substrate.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: October 1, 2013
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Yang Wei, Shou-Shan Fan
  • Patent number: 8546157
    Abstract: An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of majority carriers and lower the series resistance between the contact and the substrate, the regions beneath the metal contacts are more heavily doped. Thus, regions of higher dopant concentration are created in at least one of the FSF or the emitter. These regions are created through the use of selective implants, which can be performed on one or two sides of the bifacial solar cell to improve efficiency.
    Type: Grant
    Filed: March 7, 2012
    Date of Patent: October 1, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Atul Gupta, Nicholas P. T. Bateman
  • Publication number: 20130248917
    Abstract: A semiconductor light emitting device includes a light emitting unit, a first and second electrode, a first and second metal pillar, a sealing unit, a rectifying element, and a first and second interconnection. The light emitting unit includes a first and second semiconductor layer, and a light-emitting layer. The light-emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light-emitting layer. The first electrode is provided on the first semiconductor layer. The second electrode is provided on the second semiconductor layer. The first metal pillar is electrically connected to the first electrode. The second metal pillar is electrically connected to the second electrode. The sealing unit seals the first metal pillar and the second metal pillar. The rectifying element is provided below the first semiconductor layer, including a rectifying unit.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 26, 2013
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Susumu OBATA, Toshiya Nakayama, Hisashi Ito, Akiya Kimura, Kazuo Shimokawa, Kazuhito Higuchi, Akihiro Kojima, Miyoko Shimada, Yoshiaki Sugizaki, Hideto Furuyama
  • Publication number: 20130248868
    Abstract: A display panel includes a base substrate, a common electrode, a liquid crystal layer, a pixel electrode, a gate line, a data line, a switching element, a color filter and a light blocking pattern. The base substrate includes a trench. The common electrode is disposed in the trench. The liquid crystal layer is disposed in the trench and disposed on the common electrode. The pixel electrode is disposed on the base substrate and the liquid crystal layer. The gate line, the data line and the switching element are disposed on the base substrate and the pixel electrode. The color filter and the light blocking pattern are disposed on the gate line, the data line and the switching element.
    Type: Application
    Filed: September 5, 2012
    Publication date: September 26, 2013
    Applicant: SAMSUNG DISPLAY CO., LTD.
    Inventors: Yang-Ho JUNG, Seung-Bo SHIM, Jin-Ho JU, Jun-Gi KIM
  • Publication number: 20130240855
    Abstract: A method for exposing an electrode terminal covered with an organic film in a light-emitting device without damaging the electrode terminal is provided. In a region of the electrode terminal to which electric power from an external power supply or an external signal is input, an island-shaped organic compound-containing layer is formed and the organic film is formed thereover. The organic film is removed by utilizing low adhesion of an interface between the organic compound-containing layer and the electrode terminal, whereby the electrode terminal can be exposed without damage to the electrode terminal.
    Type: Application
    Filed: April 26, 2013
    Publication date: September 19, 2013
    Inventors: Akihiro Chida, Kaoru HANATO, Tomoya AOYAMA, Ryu KOMATSU, Masatoshi KATANIWA
  • Publication number: 20130240832
    Abstract: Various embodiments provide materials and methods for integrating exemplary heterostructure field-effect transistor (HFET) driver circuit or thyristor driver circuit with LED structures to reduce or eliminate resistance and/or inductance associated with their conventional connections.
    Type: Application
    Filed: May 1, 2013
    Publication date: September 19, 2013
    Applicant: STC.UNM
    Inventor: Stephen D. Hersee
  • Publication number: 20130240888
    Abstract: A method of fabricating a thin film transistor substrate includes: forming a polymer layer on a glass substrate; forming a passivation layer on the polymer layer; forming a thin film transistor array on the passivation layer; and separating the glass substrate from the polymer layer by irradiating a laser from a rear surface of the glass substrate.
    Type: Application
    Filed: June 27, 2012
    Publication date: September 19, 2013
    Inventors: Yoon-Dong CHO, Jong-Hyun Park, Soo-Young Yoon, Mi-Jung Lee, Jae-kyung Choi
  • Publication number: 20130240914
    Abstract: An organic light emitting diode (OLED) display includes a substrate where a plurality of pixels are formed, a first pixel defining layer on the substrate, the first pixel defining layer dividing the plurality of pixels, a connection wire on the first pixel defining layer, the connection wire electrically connecting two adjacent pixels, and a second pixel defining layer on the first pixel defining layer, the second pixel defining layer covering the connection wire.
    Type: Application
    Filed: September 4, 2012
    Publication date: September 19, 2013
    Inventors: Guang Hai JIN, Jae-Beom CHOI, Kwan-Wook JUNG, June-Woo LEE, Moo-Jin KIM, Ga-Young KIM
  • Patent number: 8536613
    Abstract: A heterostructure contains an IC and an LED. An IC and an LED are initially provided. The IC has at least one first electric-conduction block and at least one first connection block. The IC electrically connects with the first electric-conduction block. The first face of the LED has at least one second electric-conduction block and at least one second connection block. The LED electrically connects to the second electric-conduction block. Subsequently, the first electric-conduction block and the first connection block are respectively joined to the second electric-conduction block and the second connection block. The first electric-conduction block is electrically connected with the second electric-conduction block and forms a heterostructure. The system simultaneously provides functions of heat radiation and electric communication for the IC and LED resulting in a high-density, multifunctional heterostructure.
    Type: Grant
    Filed: September 2, 2011
    Date of Patent: September 17, 2013
    Assignee: National Chiao Tung University
    Inventors: Kuan-Neng Chen, Cheng-Ta Ko, Wei-Chung Lo
  • Patent number: 8530341
    Abstract: A method of manufacturing an organic light emitting diode display, the method including forming an amorphous silicon layer on a buffer layer disposed on substrate, heat-treating the amorphous silicon film to form a microcrystalline silicon film; and scanning and irradiating a linear laser beam twice or more onto the microcrystalline silicon film to form a polysilicon film, wherein a subsequent scanning of the linear laser beam partially overlaps previous scanning of the linear laser beam in a width direction.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: September 10, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Kwang-Hae Kim, Moo-Jin Kim
  • Patent number: 8518728
    Abstract: In case that a conventional TFT is formed to have an inversely staggered type, a resist mask is required to be formed by an exposing, developing, and droplet discharging in forming an island-like semiconductor region. It resulted in the increase in the number of processes and the number of materials. According to the present invention, a process can be simplified since after forming a source region and a drain region, a portion serving as a channel region is covered by an insulating film serving as a channel protecting film to form an island-like semiconductor film, and so a semiconductor element can be manufactured by using only metal mask without using a resist mask.
    Type: Grant
    Filed: January 3, 2011
    Date of Patent: August 27, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yohei Kanno, Gen Fujii
  • Publication number: 20130207087
    Abstract: An organic light emitting display device includes a light shield layer formed on a substrate and a buffer layer formed on an entire surface of the substrate, an oxide semiconductor layer and first electrode formed on the buffer layer, a gate insulation film and gate electrode formed on the oxide semiconductor layer while being deposited to expose both edges of the oxide semiconductor layer, an interlayer insulation film formed to expose both the exposed edges of the oxide semiconductor layer and the first electrode, source and drain electrodes connected with one edge and the other edge of the oxide semiconductor layer, respectively, and a protective film formed to cover the source and drain electrodes while exposing a region of the first electrode so as to define a luminescent region and a non-luminescent region.
    Type: Application
    Filed: December 21, 2012
    Publication date: August 15, 2013
    Applicant: LG DISPLAY CO., LTD.
    Inventor: LG DISPLAY CO., LTD.
  • Publication number: 20130203193
    Abstract: A method of manufacturing an organic light emitting diode (OLED) display is disclosed. In one aspect, the method includes preparing a substrate, forming a spacer on the substrate along an edge of the substrate, forming a driving circuit and an organic light emitting diode on the substrate to be surrounded by the spacer and forming an encapsulation thin film so as to substantially cover the driving circuit and the organic light emitting diodel. The mask that is used in the forming of the driving circuit and the organic light emitting diode is supported by and contacts the spacer.
    Type: Application
    Filed: March 15, 2013
    Publication date: August 8, 2013
    Applicant: Samsung Display Co., Ltd.
    Inventor: Samsung Display Co., Ltd.
  • Patent number: 8502204
    Abstract: An optoelectronic module includes a layer structure having a plurality of semiconductor layers including a substrate layer, a first layer arrangement and a second layer arrangement, wherein 1) the first layer arrangement has a light-emitting layer arranged on the substrate layer, 2) the second layer arrangement contains at least one circuit that controls an operating state of the light-emitting layer, and 3) the second layer arrangement is arranged on the substrate layer and/or surrounded by the substrate layer.
    Type: Grant
    Filed: May 13, 2009
    Date of Patent: August 6, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Dieter Eissler, Siegfried Herrmann
  • Publication number: 20130187133
    Abstract: A planarization film is formed as a silicon oxide monolayer using, for instance, a spin coat method, through, for example, applying a silicon-containing organic solvent to an upper portion of a TFT layer and planarizing an upper surface of a resist film made up of a silicon-containing organic solvent, heating a predetermined processing fluid, e.g., peroxymonosulfuric acid, and discharging the processing fluid heated to, for example, 150° C., onto the planarized upper surface of the resist film such that organic components of the resist film are dissolved while silicon in the resist film is oxidized by the processing fluid.
    Type: Application
    Filed: December 19, 2012
    Publication date: July 25, 2013
    Applicant: PANASONIC CORPORATION
    Inventor: Panasonic Corporation
  • Patent number: 8486730
    Abstract: A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.
    Type: Grant
    Filed: August 6, 2012
    Date of Patent: July 16, 2013
    Assignee: TSMC Solid State Lighting Ltd.
    Inventors: Ding-Yuan Chen, Hung-Ta Lin, Chen-Hua Yu, Wen-Chih Chiou
  • Patent number: 8481348
    Abstract: The invention provides a phase change memory and a method for forming the phase change memory. The phase change memory includes a storage region and a peripheral circuit region. The peripheral circuit region has a peripheral substrate, a plurality of peripheral shallow trench isolation (STI) units in the peripheral substrate, and at least one MOS transistor on the peripheral substrate and between the peripheral STI units. The storage region has a storage substrate, an N-type ion buried layer on the storage substrate, a plurality of vertical LEDs on the N-type ion buried layer, a plurality of storage shallow trench isolation (STI) units between the vertical LEDs, and a plurality of phase change layers on the vertical LED and between the storage STI units. The storage STI units have thickness substantially equal to thickness of the vertical LEDs. The peripheral STI units have thickness substantially equal to thickness of the storage STI units. The N-type conductive region contains SiC.
    Type: Grant
    Filed: July 5, 2011
    Date of Patent: July 9, 2013
    Assignee: Semiconductor Manufacturing International Corp.
    Inventors: Fumitake Mieno, Youfeng He
  • Publication number: 20130168648
    Abstract: An organic light emitting display device wherein organic and inorganic films are alternately stacked, and the inorganic film is patterned to form an outgassing route, through which gas is released from the organic film, and a manufacturing method thereof is herein.
    Type: Application
    Filed: November 9, 2012
    Publication date: July 4, 2013
    Applicant: LG DISPLAY CO., LTD.
    Inventor: LG DISPLAY CO., LTD.
  • Publication number: 20130162959
    Abstract: The present invention belongs to the technical field of semiconductor devices and relates to a brightness-adjustable illuminator and an array and the manufacturing methods thereof. The illuminator is comprised of a semiconductor substrate, a MOSFET and a light-emitting diode that are located on the semiconductor substrate. The light-emitting diode (LED) and the control element (MOSFET) thereof are integrated on the same chip, so a single chip is capable of realizing the image transmission. An illuminator array may consist of a plurality of illuminators. Meanwhile, the invention also discloses a method for manufacturing the illuminator. Therefore, the projection equipment manufactured by the technology of the present invention has the advantages of small size, portability, low power consumption, etc. Furthermore, the use of the integrated circuit chip greatly simplifies the system of the projection equipment, reduces the production cost and greatly enhances the pixel quality and brightness.
    Type: Application
    Filed: November 15, 2011
    Publication date: June 27, 2013
    Applicant: FUDAN UNIVERSITY
    Inventors: Pengfei Wang, Xi Lin, Xinyan Xiu, Wei Zhang
  • Publication number: 20130161631
    Abstract: A display device and method for manufacturing the same are discussed. The display device according to an embodiment includes a substrate, a gate metal line disposed on the substrate, a gate insulating film configured to insulate the gate metal line, a data metal line disposed on the gate insulating film, and a protection film disposed at an area where the gate metal line and the data metal line overlap each other between the gate metal line and the data metal line.
    Type: Application
    Filed: December 18, 2012
    Publication date: June 27, 2013
    Applicant: LG DISPLAY CO., LTD.
    Inventor: LG DISPLAY CO., LTD.
  • Patent number: 8471260
    Abstract: A pixel structure disposed on a substrate having an array of pixel areas is provided. A common electrode is disposed on the substrate to surround each of the pixel areas. A capacitance storage electrode is disposed on the common electrode. A first passivation layer covers the capacitance storage electrode and the common electrode. A gate insulation layer covers the scan line and the gate electrode. A semiconductor layer is disposed on the gate insulation layer. A data line, a source and a drain are disposed in each of the pixel areas and the source and the drain are disposed on two sides of the semiconductor layer. A second passivation layer has a contact window and covers the data line, the source, and the drain. A pixel electrode is disposed in each of the pixel areas and is electrically connected with the drain through the contact window.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: June 25, 2013
    Assignee: Chunghwa Picture Tubes, Ltd.
    Inventor: Meng-Chi Liou