Abstract: In case that a conventional TFT is formed to have an inversely staggered type, a resist mask is required to be formed by an exposing, developing, and droplet discharging in forming an island-like semiconductor region. It resulted in the increase in the number of processes and the number of materials. According to the present invention, a process can be simplified since after forming a source region and a drain region, a portion serving as a channel region is covered by an insulating film serving as a channel protecting film to form an island-like semiconductor film, and so a semiconductor element can be manufactured by using only metal mask without using a resist mask.

Abstract: An organic light emitting display device includes a light shield layer formed on a substrate and a buffer layer formed on an entire surface of the substrate, an oxide semiconductor layer and first electrode formed on the buffer layer, a gate insulation film and gate electrode formed on the oxide semiconductor layer while being deposited to expose both edges of the oxide semiconductor layer, an interlayer insulation film formed to expose both the exposed edges of the oxide semiconductor layer and the first electrode, source and drain electrodes connected with one edge and the other edge of the oxide semiconductor layer, respectively, and a protective film formed to cover the source and drain electrodes while exposing a region of the first electrode so as to define a luminescent region and a non-luminescent region.

Abstract: A method of manufacturing an organic light emitting diode (OLED) display is disclosed. In one aspect, the method includes preparing a substrate, forming a spacer on the substrate along an edge of the substrate, forming a driving circuit and an organic light emitting diode on the substrate to be surrounded by the spacer and forming an encapsulation thin film so as to substantially cover the driving circuit and the organic light emitting diodel. The mask that is used in the forming of the driving circuit and the organic light emitting diode is supported by and contacts the spacer.

Abstract: An optoelectronic module includes a layer structure having a plurality of semiconductor layers including a substrate layer, a first layer arrangement and a second layer arrangement, wherein 1) the first layer arrangement has a light-emitting layer arranged on the substrate layer, 2) the second layer arrangement contains at least one circuit that controls an operating state of the light-emitting layer, and 3) the second layer arrangement is arranged on the substrate layer and/or surrounded by the substrate layer.

Abstract: A planarization film is formed as a silicon oxide monolayer using, for instance, a spin coat method, through, for example, applying a silicon-containing organic solvent to an upper portion of a TFT layer and planarizing an upper surface of a resist film made up of a silicon-containing organic solvent, heating a predetermined processing fluid, e.g., peroxymonosulfuric acid, and discharging the processing fluid heated to, for example, 150° C., onto the planarized upper surface of the resist film such that organic components of the resist film are dissolved while silicon in the resist film is oxidized by the processing fluid.

Abstract: A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

Abstract: The invention provides a phase change memory and a method for forming the phase change memory. The phase change memory includes a storage region and a peripheral circuit region. The peripheral circuit region has a peripheral substrate, a plurality of peripheral shallow trench isolation (STI) units in the peripheral substrate, and at least one MOS transistor on the peripheral substrate and between the peripheral STI units. The storage region has a storage substrate, an N-type ion buried layer on the storage substrate, a plurality of vertical LEDs on the N-type ion buried layer, a plurality of storage shallow trench isolation (STI) units between the vertical LEDs, and a plurality of phase change layers on the vertical LED and between the storage STI units. The storage STI units have thickness substantially equal to thickness of the vertical LEDs. The peripheral STI units have thickness substantially equal to thickness of the storage STI units. The N-type conductive region contains SiC.

Abstract: An organic light emitting display device wherein organic and inorganic films are alternately stacked, and the inorganic film is patterned to form an outgassing route, through which gas is released from the organic film, and a manufacturing method thereof is herein.

Abstract: The present invention belongs to the technical field of semiconductor devices and relates to a brightness-adjustable illuminator and an array and the manufacturing methods thereof. The illuminator is comprised of a semiconductor substrate, a MOSFET and a light-emitting diode that are located on the semiconductor substrate. The light-emitting diode (LED) and the control element (MOSFET) thereof are integrated on the same chip, so a single chip is capable of realizing the image transmission. An illuminator array may consist of a plurality of illuminators. Meanwhile, the invention also discloses a method for manufacturing the illuminator. Therefore, the projection equipment manufactured by the technology of the present invention has the advantages of small size, portability, low power consumption, etc. Furthermore, the use of the integrated circuit chip greatly simplifies the system of the projection equipment, reduces the production cost and greatly enhances the pixel quality and brightness.

Abstract: A display device and method for manufacturing the same are discussed. The display device according to an embodiment includes a substrate, a gate metal line disposed on the substrate, a gate insulating film configured to insulate the gate metal line, a data metal line disposed on the gate insulating film, and a protection film disposed at an area where the gate metal line and the data metal line overlap each other between the gate metal line and the data metal line.

Abstract: A pixel structure disposed on a substrate having an array of pixel areas is provided. A common electrode is disposed on the substrate to surround each of the pixel areas. A capacitance storage electrode is disposed on the common electrode. A first passivation layer covers the capacitance storage electrode and the common electrode. A gate insulation layer covers the scan line and the gate electrode. A semiconductor layer is disposed on the gate insulation layer. A data line, a source and a drain are disposed in each of the pixel areas and the source and the drain are disposed on two sides of the semiconductor layer. A second passivation layer has a contact window and covers the data line, the source, and the drain. A pixel electrode is disposed in each of the pixel areas and is electrically connected with the drain through the contact window.

Abstract: An organic light-emitting display device includes a thin film transistor on a substrate, a first wiring and a second wiring overlapping each other, the first and second wirings being at different heights relative to the substrate and being connected to the thin film transistor, and a plurality of insulating layers between the first wiring and the second wiring.

Abstract: An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device with low power consumption or a manufacturing method thereof. A light-transmitting conductive layer which functions as a gate electrode, a gate insulating film formed over the light-transmitting conductive layer, a semiconductor layer formed over the light-transmitting conductive layer which functions as the gate electrode with the gate insulating film interposed therebetween, and a light-transmitting conductive layer which is electrically connected to the semiconductor layer and functions as source and drain electrodes are included.

Abstract: A display device includes a display element, a transistor configured to drive the display element, the transistor including a channel region, and a retention capacitor. An oxide semiconductor film is provided in areas across the transistor and the retention capacitor, the oxide semiconductor film including a first region formed in the channel region of the transistor, and a second region having a lower resistance than that of the first region. The second region is formed in the areas of the transistor and retention capacitor other than in the channel region.

Abstract: An organic light-emitting display apparatus includes: an active layer formed on the substrate; a gate electrode, in which a first insulation layer formed on the active layer, a first conductive layer formed on the first insulation layer and comprising a transparent conductive material, and a second conductive layer comprising a metal are sequentially stacked; a pixel electrode, in which a first electrode layer formed on the first insulation layer to be spaced apart from the gate electrode and comprising a transparent conductive material, a second electrode layer formed of a semi-permeable metal and comprising pores, and a third electrode layer comprising a metal are sequentially stacked; source/drain electrodes electrically connected to the active layer with a second insulation layer covering the gate electrode and the pixel electrode interposed therebetween; an electro-luminescence (EL) layer formed on the pixel electrode; and an opposite electrode formed on the EL layer to face the pixel electrode, wherein

Abstract: Disclosed herein is a display device, including: a substrate; a circuit part configured to include a drive element; a planarization insulating layer; an electrically-conductive layer including a plurality of first electrodes and an auxiliary interconnect; an aperture-defining insulating layer configured to insulate the plurality of first electrodes from each other and have an aperture through which part of the first electrode is exposed; a plurality of light emitting elements; and a separator configured to be formed by removing the planarization insulating layer at a position between a display area, in which the plurality of light emitting elements connected to the drive element are disposed, and a peripheral area which is surrounding the display area. A method of manufacturing a display device is also provided.

Abstract: The present invention provides a layer structure comprising a substrate (1), at least one LEC (7) (light emitting electrochemical cell) and at least one further electrotechnical structural element (4, 5, 8), a process for the production of this layer structure, and the use thereof in the production of small and large display and control elements and in the production of casing elements for mobile or stationary electronic devices or small or large household appliances or in the production of keyboard systems without moving components.

Abstract: GaN LEDs monolithically integrated with silicon-based ESD protection diodes. Hybrid MOCVD or HVPE epitaxial systems may be utilized for in-situ epitaxially growth of doped silicon containing films to form both the silicon-based ESD protection diode material stacks as well as a silicon containing transition layer prior to growth of a GaN-based LED material stack. The silicon-based ESD protection diodes may be interconnected with layers of a GaN LED material stack to form Zener diodes connected with the GaN LEDs.

Abstract: A pixel includes an organic light emitting diode, a first transistor having a source coupled to a first power source, a control gate coupled to a first node, and a drain coupled to a second node, wherein the first transistor includes a floating gate and an insulating layer between the floating gate and the control gate, a second transistor having a source coupled to a data line, a drain coupled to the first node, and a gate coupled to a scan line, a third transistor having a source coupled to the second node, a drain coupled to the organic light emitting diode, and a gate coupled to one of a light emitting control line and the scan line, and a capacitor coupled between the first power source and the first node.

Abstract: A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost.

Abstract: This disclosure provides systems, methods and apparatus for storage capacitors. In one aspect, a device includes an array having at least a first display element and a second display element, at least one switch configured to control a flow of charge between a source and the first display element, and at least one interferometric optical mask structure disposed in a non-active area of the array between the first display element and the second display element. The optical mask structure includes a storage capacitor formed by a first conductive layer and a second conductive layer. The storage capacitor is electrically coupled to the at least one switch and the first display element.

Abstract: A method for manufacturing an LED (light emitting diode) includes following steps: providing a first electrode, a second electrode and a Zener diode, the Zener diode being electrically connected to the first and second electrodes; providing a mold; the first electrode, the second electrode and the Zener diode being received in the mold; injecting a liquid molding material into the mold, thereby integrally forming a base, a dam, and a reflective cup, the Zener diode being encapsulated in the dam; setting first and second LED chips respectively on the first and second electrodes; filling an encapsulation material in the reflective cup to encapsulate the first and second LED chips. The first and second LED chips are separated from each other by the dam.

Abstract: A display includes a pixel array part with pixels that each have at least one transistor whose conduction state is controlled by a drive signal input to a control terminal, and a scanner including a plurality of buffers that are formed of transistors. The buffers correspond to a pixel arrangement and output a drive signal to the control terminals of the transistors of the pixels. The transistors of the pixels and the transistors of the buffers are formed through irradiation with laser light that is moved for scanning in a predetermined direction and has a predetermined wavelength. The transistors in the buffers are formed in such a way that the channel length direction of the transistors is set parallel to the scan direction of the laser light.

Abstract: An optoelectronic device article comprises a substrate containing at least one electrically conductive microvia, at least one emitter diode and at least one ESD diode, optionally formed in situ, disposed in or on the substrate, and an electrically conductive path between the foregoing elements. A reflector cavity may be defined in the substrate for receiving the emitter diode(s), with retention elements on the substrate used to retain a lens material. High flux density and high emitter diode spatial density may be attained. Thermal sensors, radiation sensors, and integral heat spreaders comprising one or more protruding fins may be integrated into the article.

Abstract: The volume per drop of the drops ejected by each nozzle is detected. It is then determined whether a volume of drops equal to or greater than a target value can be ejected by causing one or more first nozzles to eject drops, the detected volume per drop of the first nozzles falling within a first range of a preset value. When the determination is affirmative, the first nozzles are selected for ejection of drops. When the determination is negative, the first nozzles and one or more second nozzles are selected for ejection of drops. The detected volume per drop of the second nozzles falls within a second range of the present value, where the second range is greater than the first range.

Abstract: Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.

Abstract: A method of manufacturing an array substrate for a liquid crystal display device includes forming gate and data lines crossing each other on a substrate; forming a thin film transistor connected to the gate and data lines; forming a passivation layer on the substrate having the gate lines, data lines and the thin film transistor; forming a first conductive material layer on the passivation layer and connected to a drain electrode of the thin film transistor; oxidizing a surface of the first conductive material layer; forming a second conductive material layer on the oxidized first conductive material layer; forming a photoresist pattern on the second conductive material layer; etching the first and second conductive material layers using the photoresist pattern to form pixel and common electrodes which are alternately arranged in the pixel region and produces an in-plane electric field; and removing the photoresist pattern.

Abstract: A circuit for a pixel in a display device includes drive circuitry, an organic light emitting diode in electrical connection with the drive circuitry, and at least one resistive current path which is selected to be non-emissive in electrical connection with the drive circuitry and in parallel with the organic light emitting diode.

Abstract: A method for producing a multiplicity of optoelectronic components includes providing a semiconductor body carrier including on a first main area a multiplicity of semiconductor bodies, each provided with a contact structure and having an active layer that generates electromagnetic radiation, in a semiconductor layer sequence, and forming a planar filling structure on the first main area such that the planar filling structure at least partly covers regions of the contact structure and the semiconductor body carrier without covering the semiconductor body.

Abstract: A method for fabricating an integrated AC LED module comprises steps: forming a junction layer on a substrate, and defining a first growth area and a second growth area on the junction layer; respectively growing a Schottky diode and a LED on the first growth area and the second growth area; forming a passivation layer and a metallic layer on the Schottky diode, the LED and the substrate. Thereby, the Schottky diode is electrically connected with the LED via the metallic layer. Thus is promoted the reliability of electric connection of diodes, reduced the layout area of the module, and decreased the fabrication cost.

Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.

Abstract: The present invention relates to an organic light emitting display device which can prevent a light compensation layer from cracking and a method for fabricating the same.

Abstract: The invention provides a phase change memory and a method for forming the phase change memory. The phase change memory includes a storage region and a peripheral circuit region. The peripheral circuit region has a peripheral substrate, peripheral shallow trench isolation (STI) units in the peripheral substrate, and MOS transistors on the peripheral substrate and between the peripheral STI units. The storage region has a storage substrate, an N-type ion buried layer on the storage substrate, vertical LEDs on the on the N-type ion buried layer, storage shallow trench isolation (STI) units between the vertical LEDs, and phase change layers on the vertical LEDs and between the storage STI units. The storage STI units have thickness equal to thickness of the vertical LEDs. Each vertical LED comprises an N-type conductive region on the N-type ion buried layer, and a P-type conductive region on the N-type conductive region. The P-type conductive region contains SiGe.

Abstract: A manufacturing method and a structure of a light-emitting diode (LED) chip are disclosed. The method includes the steps of: providing a conductive block; providing an epitaxial block; bonding; removing an epitaxial substrate; making independent LEDs; forming a dielectric layer; and making electrical connection. A first LED, a second LED, and a third LED are formed on the conductive block, wherein the first and second LEDs are electrically connected in series, and the second and third LEDs are electrically connected in parallel. Thus, a basic unit with a flexible design of series- and parallel-connected LEDs can be formed to increase the variety and application of LED chip-based designs.

Abstract: An OLED device is disclosed. The OLED device includes a first substrate including a driver element and a connection electrode connected to the driver element, a second substrate including an organic light emission diode element, a contact spacer electrically connected to the connection electrode, and a sealant disposed into a cavity which is formed by the first and second substrates, the connection electrode, the organic light emission diode element, and the contact space. Herein, the sealant is bonded to the contact spacer and the connection electrode and maintains the electric connection between the contact spacer and the connection electrode. In this manner, the driver element and the organic light emission diode element are protected from external oxygen and/or moisture, and the electric connection between the connection electrode and the contact spacer is reinforced.

Abstract: An organic light emitting diode display and a fabrication method thereof, the display including a substrate; a thin film transistor on the substrate; and an organic light emitting diode on the substrate, the organic light emitting diode including a pixel electrode, an organic emission layer, and a common electrode, wherein the organic emission layer includes a red (R) pixel, a green (G) pixel, and a blue (B) pixel, the pixel electrode includes a first pixel electrode, a second pixel electrode, and a third pixel electrode that respectively correspond to the red pixel, the green pixel, and the blue pixel, the first pixel electrode, the second pixel electrode, and the third pixel electrode each have different thicknesses, and the first pixel electrode, the second pixel electrode, and the third pixel electrode each include a first hydrophobic layer.

Abstract: Disclosed is an organic light-emitting display device capable of preventing the occurrence of cracks at corner regions of an adhesive layer. The organic light-emitting display device includes a first substrate including a plurality of pixels and a second substrate. A thin film transistor (TFT) located at each pixel of the first substrate. A pixel electrode is also located at each pixel. An organic light-emitting unit that emits light is coupled to each pixel electrode. A common electrode is electrically coupled to each organic light-emitting unit. An adhesive layer is coupled to the common electrode. The adhesive layer attaches the first and second substrates. The corner regions of the adhesive layer are rounded in order to control the creation of cracks in the adhesive layer and thereby prevent moisture from entering the active area of the device.

Abstract: A flat panel display device with oxide thin film transistors and a fabricating method thereof are disclosed. The flat panel display device includes: a substrate; gate lines and data lines formed to cross each other and define a plurality of pixel regions on the substrate; the thin film transistors each including an oxide channel layer which is formed at an intersection of the gate and data lines; a pixel electrode and a common electrode formed in the pixel region with having a passivation layer therebetween; and step coverage compensation patterns formed at a step portion formed by the gate line and a gate electrode of the thin film transistor.

Abstract: An organic EL display includes: a plurality of first electrodes provided in a display region on a drive substrate, the plurality of first electrodes each including a laminated film having two or more layers; an organic layer provided on the plurality of first electrodes and including a light emitting layer; an electrode pad provided in a peripheral region around the display region; and a second electrode provided on the organic layer as well as the electrode pad, wherein the laminated film includes a first conductive film functioning as a reflective film, and a second conductive film provided below the first conductive film, and having a reflectance lower than that of the first conductive film, and the electrode pad corresponds to a part of the laminated film, and includes a conductive film made of a material same as that of the second conductive film.

Abstract: An organic light-emitting display apparatus includes a first insulating layer, a second insulating layer on the first insulating layer and including an unevenness portion, a third insulating layer on the second insulating layer, a pixel electrode on the third insulating layer, an opposite electrode facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode; a thin film transistor including an active layer, a gate electrode, and source/drain electrodes connected to the active layer, the first insulating layer being between the active layer and the gate electrode and the second insulating layer being between the gate electrode, and the source/drain electrodes; and a capacitor including a lower electrode on a same layer as the gate electrode, a dielectric layer of a same material as the third insulating layer, and an upper electrode on a same layer as the pixel electrode.

Abstract: The mechanisms of forming SiC crystalline regions on Si substrate described above enable formation and integration of GaN-based devices and Si-based devices on a same substrate. The SiC crystalline regions are formed by implanting carbon into regions of Si substrate and then annealing the substrate. An implant-stop layer is used to cover the Si device regions during formation of the SiC crystalline regions.

Abstract: A method of manufacturing a nano-rod and a method of manufacturing a display substrate in which a seed including a metal oxide is formed. A nano-rod is formed by reacting the seed with a metal precursor in an organic solvent. Therefore, the nano-rod may be easily formed, and a manufacturing reliability of the nano-rod and a display substrate using the nano-rod may be improved.

Abstract: Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.

Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.

Abstract: An organic light-emitting display apparatus is disclosed. In one aspect, the apparatus includes a thin film transistor comprising an active layer, a gate electrode, and source and drain electrodes. The apparatus also includes at least two capacitors each comprising a first electrode having a first region doped with ion impurities and a second region not doped with ion impurities, and formed on the same plane as the active layer. Each capacitor also includes a second electrode formed on the same plane as the gate electrode and disposed corresponding to the second region. The apparatus also includes a pixel electrode formed on the same plane as the gate electrode and connected to one of the source and drain electrodes, a light-emitting layer disposed on the pixel electrode, and an opposite electrode disposed on the light-emitting layer.

Abstract: A method for fabricating an integrated AC LED module comprises steps: forming a junction layer on a substrate, and defining a first growth area and a second growth area on the junction layer; respectively growing a Schottky diode and a LED on the first growth area and the second growth area; forming a passivation layer and a metallic layer on the Schottky diode, the LED and the substrate. Thereby, the Schottky diode is electrically connected with the LED via the metallic layer. Thus is promoted the reliability of electric connection of diodes, reduced the layout area of the module, and decreased the fabrication cost.

Abstract: An optoelectronic semiconductor component includes a semiconductor body connected to a main area of a carrier body by a solder layer, wherein sidewalls of the semiconductor body are provided with a dielectric layer, and a mirror layer applied to the dielectric layer.

Abstract: Methods of fabricating of a light-emitting device are provided, the methods include forming a plurality of light-emitting units on a substrate, measuring light characteristics of the plurality of light-emitting units, respectively, depositing a phosphor layer on the plurality of light-emitting units using a printing method, and cutting the substrate to separate the plurality of light-emitting units into unit by unit. The phosphor layer is adjustably deposited according to the measured light characteristics of the plurality of light-emitting units.

Abstract: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

Abstract: Provided are a crystallization apparatus and method, which prevent cracks from being generated, a method of manufacturing a thin film transistor (TFT), and a method of manufacturing an organic light emitting display apparatus. The crystallization apparatus includes a chamber for receiving a substrate, a first flash lamp and a second flash lamp, which are disposed facing each other within the chamber, wherein amorphous silicon layers are disposed on a first surface of the substrate facing the first flash lamp and a second surface of the substrate facing the second flash lamp, respectively.