Having Diverse Electrical Device Patents (Class 438/23)
  • Publication number: 20120223349
    Abstract: A front side emitting type organic light-emitting display device includes a substrate; an anode electrode formed over the substrate; an organic layer formed over the anode electrode; a cathode electrode formed over the organic layer; a pair of transparent conductive oxide layers disposed over the cathode electrode; and a metal layer interposed between the pair of transparent conductive oxide layers.
    Type: Application
    Filed: October 26, 2011
    Publication date: September 6, 2012
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventors: Chang-Ho Lee, Hee-Joo Ko, Hyung-Jun Song, Il-Soo Oh, Jin-Young Yun, Bo-Ra Lee, Se-Jin Cho, Young-Woo Song, Jong-Hyuk Lee, Sung-Chul Kim
  • Publication number: 20120218485
    Abstract: An active matrix substrate includes a plurality of pixels arranged in a matrix, a plurality of capacitor lines (11b) extending in one of directions in which the pixels are aligned and in parallel to each other, a plurality of TFTs (5), one for each of the pixels, a protective film (16a) covering the TFTs (5), a plurality of pixel electrodes (18a) arranged in a matrix on the protective film (16a) and connected to the respective corresponding TFTs (5), and a plurality of auxiliary capacitors (6), one for each of the pixels. Each of the auxiliary capacitors (6) includes the corresponding capacitor line (11b), the corresponding pixel electrode (18a), and the protective film (16a) between the corresponding capacitor line (11b) and the corresponding pixel electrode (18a).
    Type: Application
    Filed: July 26, 2010
    Publication date: August 30, 2012
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Yoshimasa Chikama, Hirohiko Nishiki, Yoshifumi Ohta, Yuuji Mizuno, Hinae Mizuno, Takeshi Hara, Tetsuya Aita, Masahiko Suzuki, Michiko Takei, Okifumi Nakagawa, Yoshiyuki Harumoto
  • Publication number: 20120205699
    Abstract: A light-emitting device package and a method of manufacturing the light-emitting device package. The light-emitting device package includes a wiring substrate; a Zener diode mounted on a first region of the wiring substrate; a light-emitting device chip mounted on the first region and a second region of the wiring substrate; and a molding member for fixing at least a portion of the wiring substrate, wherein the Zener diode is embedded in the molding member.
    Type: Application
    Filed: February 3, 2012
    Publication date: August 16, 2012
    Inventors: Cheol-jun YOO, Young-hee Song
  • Publication number: 20120208303
    Abstract: The sizes of an evaporation mask used for a full-color light-emitting device and an evaporation mask used for a lighting device are different from each other. For this reason, separate evaporation masks are necessary, and in the case of processing a large number of substrates at once, many evaporation masks are prepared in accordance with the number of substrates to be processed, thereby increasing the total footprint of a manufacturing apparatus. One object of the present invention is to solve a problem of such an increase. A full-color display device can be manufactured by using a color filter and white light-emitting elements in combination. By this manner, a manufacturing line for the light-emitting device can have some steps in common with a manufacturing line for the lighting device; consequently, the total footprint of the manufacturing apparatus is reduced.
    Type: Application
    Filed: February 13, 2012
    Publication date: August 16, 2012
    Inventor: Shunpei Yamazaki
  • Publication number: 20120208305
    Abstract: A method for fabricating a pixel unit is provided. A TFT is formed on a substrate. A protection layer and a patterned photoresist layer are sequentially formed on the substrate entirely. A patterned protection layer is formed by using the patterned photoresist layer as a mask and partially removing the protection layer, wherein the patterned protection layer has an undercut located at a sidewall thereof A pixel electrode material layer is formed to cover the substrate, the TFT and the patterned photoresist layer, wherein the electrode material layer is disconnected at the undercut and exposes the undercut. A pixel electrode electrically connected to the TFT is formed by lifting off the patterned photoresist layer and parts of the electrode material layer covering the patterned photoresist layer simultaneously through a stripper, wherein the stripper permeates from the undercut to an interface of the patterned photoresist layer and the patterned protection layer.
    Type: Application
    Filed: April 24, 2012
    Publication date: August 16, 2012
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Chin-Yueh Liao, Chih-Chun Yang, Chih-Hung Shih, Shine-Kai Tseng
  • Publication number: 20120208304
    Abstract: A method for manufacturing a luminescent device including a luminescent layer between a pair of electrodes is provided. The luminescent layer is formed by spreading a solution including an iridium complex. The solution is in a fog state by hitting a heated gas to the solution ejected from a nozzle arranged in a chamber. A substrate over which the luminescent layer is formed is heated while the luminescent layer is formed.
    Type: Application
    Filed: February 15, 2012
    Publication date: August 16, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: Hideaki KUWABARA
  • Patent number: 8241934
    Abstract: A display substrate includes a base substrate, a barrier pattern, a source electrode, a drain electrode, a semiconductor layer, an insulating layer, and a gate electrode. The barrier pattern protrudes from the base substrate. The source and gate electrodes are formed adjacent to opposite sides of the barrier pattern on the base substrate. The semiconductor layer is provided on the barrier pattern to connect the source electrode with the drain electrode, and the insulating layer covers the semiconductor layer, the source electrode, and the drain electrode. The gate electrode is provided on the insulating layer, and is overlapped with the semiconductor layer.
    Type: Grant
    Filed: February 15, 2012
    Date of Patent: August 14, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-Hun Noh, Myung-Hwan Kim, Seung-Hwan Cho
  • Patent number: 8236605
    Abstract: A method for separating a semiconductor wafer into chips includes the steps of sandwiching a soluble spacer between a wafer and a substrate to form a laminate, etching the wafer into a plurality of chips attached on the spacer, positioning the laminate in a chamber of an apparatus in a way that the etched wafer faces a stage of the apparatus, and introducing a solvent into the chamber to dissolve the soluble spacer so as to facilitate the chips to be supported on the stage.
    Type: Grant
    Filed: July 19, 2010
    Date of Patent: August 7, 2012
    Assignee: Domintech Co., Ltd.
    Inventor: Ming-Ching Wu
  • Patent number: 8236583
    Abstract: A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.
    Type: Grant
    Filed: September 4, 2009
    Date of Patent: August 7, 2012
    Assignee: TSMC Solid State Lighting Ltd.
    Inventors: Ding-Yuan Chen, Hung-Ta Lin, Chen-Hua Yu, Wen-Chih Chiou
  • Publication number: 20120175605
    Abstract: A design for an organic light-emitting display device that increases capacitor capacity and increases aperture ratio by forming an initializing voltage electrode on a different layer than an electrode of the capacitor and forming only one via hole for an entire set of three sub-pixels. One of the source electrodes and the drain electrodes of switching transistors for the three sub-pixels are formed in common, along with the gate electrodes of the switching transistors.
    Type: Application
    Filed: September 23, 2011
    Publication date: July 12, 2012
    Applicant: Samsung Mobile Display, Co., Ltd.
    Inventors: Hye-Jin Shin, Won-Kyu Kwak
  • Publication number: 20120175603
    Abstract: Provided is an organic EL display panel that improves aperture ratio by providing a contact hole beneath an aperture in a bank, and that prevents shortening of the display panel's lifetime by avoiding electric field concentration. An organic EL display panel includes a TFT layer; an interlayer insulation film on the TFT layer and having a plurality of contact holes one per pixel; a plurality of first electrodes, one per pixel, on the interlayer insulation film; a bank defining a plurality of apertures, at least one per pixel, and at least one contact hole is located beneath each aperture; a plurality of organic light-emitting layers each in an aperture; and a second electrode above the organic light-emitting layers. In each aperture, a thickness of the organic light-emitting layer is greater at a portion within the contact hole region than at a portion outside the contact hole region.
    Type: Application
    Filed: March 26, 2012
    Publication date: July 12, 2012
    Applicant: PANASONIC CORPORATION
    Inventor: Takayuki TAKEUCHI
  • Publication number: 20120168764
    Abstract: An organic light emitting display device and a method for manufacturing the same are provided. The organic light emitting display device includes a substrate including a capacitor region, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer of the capacitor region, a gate insulation film formed on the semiconductor layer, and a transparent electrode formed on the gate insulation film of the capacitor region, wherein a cross-sectional width of the transparent electrode is smaller than a width of the semiconductor layer.
    Type: Application
    Filed: June 29, 2011
    Publication date: July 5, 2012
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventor: Dae-Woo Kim
  • Publication number: 20120171787
    Abstract: A method is provided for forming a pixel of an electroluminescence device. The method provides a substrate; defines at least a first area for capacitors, a second area for a transistor on the substrate and a third area for an organic light-emitting diode (OLED) on the substrate; forms first conductive, first dielectric, second conductive, second dielectric, and third conductive layers over the first area; forming a third conductive layer over the second dielectric layer over the first area; wherein the first conductive layer over the first area is directly connected to a power supply voltage, wherein the second conductive layer is electrically connected to a fourth conductive layer and wherein the first conductive layer, the first dielectric layer, and the second conductive layer over the first area collectively form a first one of the capacitors over the first area, the second conductive layer, the second dielectric layer.
    Type: Application
    Filed: March 14, 2012
    Publication date: July 5, 2012
    Applicant: AU OPTRONICS CORPORATION
    Inventor: Wein-Town Sun
  • Publication number: 20120161197
    Abstract: A flexible organic light-emitting display device has a thin film encapsulation structure. The flexible organic light-emitting display device can be manufactured by a method including sequentially stacking a glass substrate, a first flexible substrate in which conductive particles are integrally dispersed, a display unit comprising a thin film transistor (TFT) layer and a light-emitting layer, and a second flexible substrate. The glass substrate can then be separated from the first flexible substrate by emitting light.
    Type: Application
    Filed: September 23, 2011
    Publication date: June 28, 2012
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: Choong-Youl Im, Il-Jeong Lee, Do-Hyun Kwon, Ju-Won Yoon, Sung-Eun Lee, Min-Woo Woo
  • Publication number: 20120164766
    Abstract: Methods of fabricating active device array and organic light emitting diode array are provided. A first pattern metal layer is formed over a substrate. An oxide semiconductor layer is formed entirely over the substrate. A first insulation layer covering the first patterned metal layer and the oxide semiconductor layer is formed entirely on the substrate. A second patterned metal layer is formed on the first insulation layer. The oxide semiconductor layer and the first insulation layer is patterned by using the second patterned metal layer as a mask to form a first patterned oxide semiconductor layer and a first patterned insulation layer. A second insulation layer is entirely formed on the substrate. A second patterned oxide semiconductor layer is formed over the second insulation layer. A third patterned metal layer is formed over the second insulation layer.
    Type: Application
    Filed: March 18, 2011
    Publication date: June 28, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yung-Hui Yeh, Chih-Ming Lai, Chun-Cheng Cheng
  • Publication number: 20120162053
    Abstract: An organic light emitting diode (OLED) display device and a fabrication method thereof are provided. In the OLED display device, when an existing power wiring using a metal used for a data wiring is divided based on a common electrode marginal region as a boundary so as to be used as a wiring as well as as the power wiring, the reduced width of the wiring is compensated for by increasing the thickness of the wiring by using a metal for an anode or a cathode, thus reducing the left and right bezel widths.
    Type: Application
    Filed: December 22, 2011
    Publication date: June 28, 2012
    Inventors: Hyun-Ho LEE, Jae-Ho SIM
  • Publication number: 20120161097
    Abstract: The invention provides a phase change memory and a method for forming the phase change memory. The phase change memory includes a storage region and a peripheral circuit region. The peripheral circuit region has a peripheral substrate, peripheral shallow trench isolation (STI) units in the peripheral substrate, and MOS transistors on the peripheral substrate and between the peripheral STI units. The storage region has a storage substrate, an N-type ion buried layer on the storage substrate, vertical LEDs on the on the N-type ion buried layer, storage shallow trench isolation (STI) units between the vertical LEDs, and phase change layers on the vertical LEDs and between the storage STI units. The storage STI units have thickness equal to thickness of the vertical LEDs. Each vertical LED comprises an N-type conductive region on the N-type ion buried layer, and a P-type conductive region on the N-type conductive region. The P-type conductive region contains SiGe.
    Type: Application
    Filed: June 9, 2011
    Publication date: June 28, 2012
    Applicant: Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Fumitake MIENO, Youfeng HE
  • Patent number: 8203686
    Abstract: To improve the response speed of liquid crystal molecules when a liquid crystal display device is changed from an on state to an off state. A liquid crystal display device that includes a liquid crystal material between a substrate and a counter substrate; a plurality of pixels over the substrate; and a microstructure which is provided over the substrate, is in contact with the liquid crystal material, and includes a movable portion and a method for manufacturing the liquid crystal display device are provided. The microstructure may include a lower electrode, an upper electrode, and a space between the lower electrode and the upper electrode. The microstructure is manufactured through the steps of forming the lower electrode over the substrate, forming a sacrificial layer over the lower electrode, forming the upper electrode over the sacrificial layer, and removing the sacrificial layer by etching to form the space.
    Type: Grant
    Filed: February 3, 2009
    Date of Patent: June 19, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kaoru Hatano, Takeshi Nishi, Shuji Fukai
  • Publication number: 20120139000
    Abstract: In an organic light-emitting display apparatus and a method of manufacturing the same, a pad region of the organic light-emitting display apparatus comprises a protrusion layer including a plurality of protrusion portions formed on a substrate so as to protrude, a pad lower electrode and a pad upper electrode, the pad lower electrode including a protrusion portion formed along a protrusion outline of the protrusion layer and a flat portion formed along the substrate, and the pad upper electrode being formed on the flat portion of the pad lower electrode. A source/drain electrode layer is formed on the pad upper electrode, an organic layer is formed on the source/drain electrode layer, and a counter electrode layer is formed on the protrusion portion of the pad lower electrode and the organic layer. The counter electrode layer follows the protrusion outline of the protrusion layer on the protrusion portion.
    Type: Application
    Filed: May 3, 2011
    Publication date: June 7, 2012
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventors: Yul-Kyu Lee, Chun-Gi You, Sun Park, Jong-Hyun Park, Kwang-Hae Kim
  • Publication number: 20120138942
    Abstract: In the light-emitting display device according to the present invention, a side-contact structure is adopted in order to secure a TFT characteristic in a linear region (on-current). In a TFT configuring a switching transistor, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is increased. In contrast, in a TFT configuring a driving transistor, in order to maintain an on current, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is reduced. This configuration is manufactured using a half-tone mask. With this, it is possible to suppress the off-current in the switching transistor, while securing the on-current in the driving transistor.
    Type: Application
    Filed: February 10, 2012
    Publication date: June 7, 2012
    Applicant: PANASONIC CORPORATION
    Inventor: Yasuo SEGAWA
  • Patent number: 8188504
    Abstract: Provided are a light-emitting device and a method for manufacturing the same. The light-emitting device includes a substrate, a light-emitting device, a protection device, and a connecting line. The light-emitting device is formed on one part of the substrate, and includes a first semiconductor layer and a second semiconductor layer. The protection device is formed on another part of the substrate, and includes a fourth semiconductor layer and a fifth semiconductor layer. The connecting line electrically connects the light-emitting device and the protection device.
    Type: Grant
    Filed: March 22, 2007
    Date of Patent: May 29, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Youl Lee
  • Publication number: 20120115260
    Abstract: A top emission OLED includes a driving TFT including a channel region and source and drain electrodes. A power supply, a ground line, and a light emitting diode are electrically coupled to the TFT and an auxiliary electrode is electrically coupled to the ground line and to the source electrode of the driver transistor. The auxiliary electrode resides between the light emitting diode and the channel region of the driver transistor and is configured to shield the channel region of the driver transistor from an electric field generated by the light emitting diode.
    Type: Application
    Filed: January 10, 2012
    Publication date: May 10, 2012
    Inventors: Kwang Jo Hwang, Jae Hee Park
  • Publication number: 20120097930
    Abstract: An organic light-emitting display apparatus including a substrate; a black matrix layer formed over the substrate; an insulating layer formed over the black matrix layer; a thin film transistor (TFT) formed over the insulating layer; a pixel electrode connected to the TFT; and an organic layer formed over the pixel electrode. At least one hole is formed in at least one of the black matrix layer and the insulating layer, in a region where the black matrix layer and the insulating layer overlap each other.
    Type: Application
    Filed: August 17, 2011
    Publication date: April 26, 2012
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: SUN PARK, CHUN-GI YOU, JONG-HYUN PARK, JIN-HEE KANG, YUL KYU LEE
  • Publication number: 20120099041
    Abstract: Embodiments of the invention disclose an array substrate and a manufacturing method thereof and a liquid crystal display. In the array substrate, an additional electrode is formed above a gate line, the additional electrode and the gate line are spaced from each other by a gate insulation layer, and the additional electrode is connected electrically with the common electrode line; pixel electrode extends to over the additional electrode and is overlapped with the additional electrode, the overlapped portion of the pixel electrode and both the additional electrode and the common electrode line forms a storage capacitor. The liquid crystal display according to the embodiment of the invention comprises the above array substrate.
    Type: Application
    Filed: April 22, 2011
    Publication date: April 26, 2012
    Applicant: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Zhenyu Xie, Xu Chen, Chunping Long, Shaoying Xu
  • Publication number: 20120086044
    Abstract: There is provided a light emitting device that includes a base wafer that contains silicon, a plurality of seed bodies provided in contact with the base wafer, and a plurality of Group 3-5 compound semiconductors that are each lattice-matched or pseudo-lattice-matched to corresponding seed bodies. In the device, a light emitting element that emits light in response to current supplied thereto is formed in at least one of the plurality of the Group 3-5 compound semiconductors, and a current limiting element that limits the current supplied to the light emitting element is formed in at least one of the plurality of the Group 3-5 compound semiconductors other than the Group 3-5 compound semiconductor in which the light emitting element is formed.
    Type: Application
    Filed: December 15, 2011
    Publication date: April 12, 2012
    Applicant: SUMITOMO CHEMICAL CO., LTD.
    Inventors: Masahiko HATA, Hiroyuki SAZAWA, Sadanori YAMANAKA
  • Publication number: 20120080663
    Abstract: An organic light-emitting display device and a method of manufacturing the organic light-emitting display device are disclosed. The organic light-emitting display device includes a bottom capacitor electrode that is formed over the same plane as an active layer of a thin film transistor and includes a semiconductor doped with ion impurities, a pixel electrode, and a top capacitor electrode formed over the same plane as a gate electrode, wherein a contact hole entirely exposing the pixel electrode and the top capacitor electrode is formed.
    Type: Application
    Filed: May 6, 2011
    Publication date: April 5, 2012
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventors: Yul-Kyu Lee, Chuy-Gi You, Sun Park, Jong-Hyun Park, Dae-Woo Kim
  • Patent number: 8148185
    Abstract: A method for fabricating an active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is formed on the display area of the substrate. A gate insulator is formed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are formed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then formed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is formed on the passivation layer.
    Type: Grant
    Filed: September 15, 2009
    Date of Patent: April 3, 2012
    Assignee: Au Optronics Corporation
    Inventors: Yu-Cheng Chen, Chen-Yueh Li, Ching-Sang Chuang, Ching-Chieh Shih, An-Thung Cho
  • Publication number: 20120074388
    Abstract: In an organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device includes: a first insulating layer, a transparent conductive layer, and a second insulating layer which are sequentially formed on a substrate; a thin film transistor including an active layer formed under the first insulating layer, a gate electrode including a part of the transparent conductive layer as a lower electrode layer, and source and drain electrodes connected to both sides of the active layer; an organic light-emitting device including a sequentially stacked structure comprising a part of the transparent conductive layer as a pixel electrode, an intermediate layer which includes an emission layer, and an opposite electrode; and a capacitor including a first electrode and a second electrode, which includes a part of the transparent conductive layer as a lower electrode layer; wherein the transparent conductive layer and the second insulating layer include a hole.
    Type: Application
    Filed: April 13, 2011
    Publication date: March 29, 2012
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: Sun Park, Jong-Hyun Park, Yul-Kyu Lee
  • Publication number: 20120061671
    Abstract: To provide a highly reliable semiconductor device including an oxide semiconductor. Further to provide a highly reliable light-emitting device including an oxide semiconductor. A second electrode sealed together with a semiconductor element including an oxide semiconductor hardly becomes inactive. A hydrogen ion and/or a hydrogen molecule produced by reaction of the active second electrode with moisture remaining in the semiconductor device and/or moisture entering from the outside of the device increase the carrier concentration in the oxide semiconductor, which causes a reduction in the reliability of the semiconductor device. An adsorption layer of a hydrogen ion and/or a hydrogen molecule may be provided on the other surface side of the second electrode having one surface in contact with the organic layer. Further, an opening which a hydrogen ion and/or a hydrogen molecule passes through may be provided for the second electrode.
    Type: Application
    Filed: September 1, 2011
    Publication date: March 15, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: Kaoru Hatano
  • Publication number: 20120061700
    Abstract: A method and a system for a reliable LED semiconductor device are provided. In one embodiment, the device comprises a carrier, a light emitting diode disposed on the carrier, an encapsulating material disposed over the light emitting diode and the carrier, at least one through connection formed in the encapsulating material, and a metallization layer disposed and structured over the at least one through connection.
    Type: Application
    Filed: September 9, 2010
    Publication date: March 15, 2012
    Inventors: Andreas EDER, Henrik EWE, Stefan LANDAU, Joachim MAHLER
  • Patent number: 8130357
    Abstract: A TFT array panel includes a substrate, a first gate line and a second gate line disposed on the substrate, a storage electrode line disposed on the substrate, a first data line intersecting the first and second gate lines, a second data line intersecting the first and second gate lines and spaced apart from the first data line, a drain electrode facing a part of the first data line and the second data line, an organic insulating layer disposed on the first data line and the second data line, the organic insulating layer having a contact hole exposing the drain electrode, a pixel electrode disposed on the organic insulating layer, the pixel electrode electrically connected to the drain electrode, and a storage electrode making a storage conductor with the pixel electrode, wherein the pixel electrode comprises a first part overlapping the first data line, and a second part overlapping the second data line, and wherein the width of the first part is different from that of the second part.
    Type: Grant
    Filed: September 30, 2009
    Date of Patent: March 6, 2012
    Assignee: Samsung Electronics Co, Ltd.
    Inventors: Dong-Gyu Kim, Hyang-Shik Kong, Jang-Soo Kim
  • Publication number: 20120052606
    Abstract: An object is to simplify a manufacturing process of a transistor, and to manufacture a light-emitting display device not only with a smaller number of photomasks compared to the number of photomasks used in the conventional method but also without an additional step. By using an intrinsic or substantially intrinsic high-resistance oxide semiconductor for a semiconductor layer included in the transistor, so that a step of processing the semiconductor layer into an island shape in each transistor can be omitted. Unnecessary portions of the semiconductor layer are etched away at the same time as a step of forming an opening in an insulating layer formed in an upper layer of the semiconductor layer, so that the number of photolithography steps is reduced.
    Type: Application
    Filed: August 24, 2011
    Publication date: March 1, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: Shunpei Yamazaki
  • Patent number: 8119467
    Abstract: Provided are a method of manufacturing a thin film transistor (TFT) substrate and a method of manufacturing an organic light emitting display apparatus, which increase the capacitance of a capacitor without increasing the probability of short circuits between wires. The method of manufacturing a TFT substrate includes (a) forming a capacitor electrode and a gate electrode on a substrate having a first region and a second region, so that the capacitor electrode is formed to correspond to the first region and the gate electrode is formed in a portion of the second region; (b) forming an interlayer insulating layer to cover the gate electrode and the capacitor electrode; and (c) etching a portion of the interlayer insulating layer in the first region by using a halftone mask to a thickness that is less than a thickness of a portion of the interlayer insulating layer in the second region.
    Type: Grant
    Filed: February 3, 2010
    Date of Patent: February 21, 2012
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventors: Ae-Kyung Kwon, Won-Kyu Kwak
  • Publication number: 20120040478
    Abstract: An organic electroluminescence display panel includes a thin-film transistor layer above a substrate. A planarizing film is above the thin-film transistor layer with contact holes being formed in the planarizing film. A bank is above the planarizing film. The bank includes openings arranged in rows and columns that define regions for forming organic electroluminescence elements. Each opening is between a pair of adjacent concaves in one of the columns. The concaves are formed in an upper surface of the bank and sunken into the contact holes. The upper surface of the bank has repellency. A light-emitting layer is formed in each opening by ejecting drops of an ink from nozzles of an inkjet head into the openings while moving the inkjet head relative to the substrate. The nozzles further eject drops of the ink into the concaves when above the concaves for ejecting the drops of the ink through every nozzle.
    Type: Application
    Filed: October 27, 2011
    Publication date: February 16, 2012
    Applicant: PANASONIC CORPORATION
    Inventor: Takayuki TAKEUCHI
  • Publication number: 20120028386
    Abstract: A method of manufacturing an organic light-emitting display device, the method including forming a thin film transistor (TFT); forming a planarization layer on the TFT; forming an opening in the planarization layer; and forming an organic light emitting diode that is electrically connected to the TFT through the opening, wherein forming the opening in the planarization layer includes forming a photosensitive layer on the planarization layer, and irradiating light on the photosensitive layer such that the light has a focus point offset from a surface of the planarization layer to control a gradient of the opening.
    Type: Application
    Filed: May 16, 2011
    Publication date: February 2, 2012
    Inventor: In-Young Jung
  • Publication number: 20120028387
    Abstract: An organic electroluminescent device includes: a switching element and a driving element connected to each other on a substrate including a pixel region; a planarization layer on the switching element and the driving element, the planarization layer having a substantially flat top surface; a cathode on the planarization layer, the cathode connected to the driving element; an emitting layer on the cathode; and an anode on the emitting layer.
    Type: Application
    Filed: September 23, 2011
    Publication date: February 2, 2012
    Inventors: Jae-Hee Park, Kyung-Min Park, Seok-Jong Lee
  • Publication number: 20120028385
    Abstract: A manufacturing method of thin film transistor substrate of a liquid crystal display panel includes following steps. A substrate is provided. Then, a transparent conducting layer and an opaque conducting layer are formed on the substrate. Thereafter, the transparent conducting layer and the opaque conducting layer are patterned by a gray-tone mask to form at least one storage capacitor electrode. Next, a first insulating layer is formed on the storage capacitor electrode. Then, at least one gate electrode is formed on the substrate. Subsequently, at least one gate insulating layer, a patterned semiconductor layer, a source electrode, a drain electrode, and a second insulating layer are formed sequentially on the gate electrode. Moreover, at least one pixel electrode is formed on the first insulating layer and the second insulating layer. A part of the pixel electrode overlaps a part of the storage capacitor electrode to form a storage capacitor.
    Type: Application
    Filed: December 30, 2010
    Publication date: February 2, 2012
    Inventor: Sheng-Hsiung Hou
  • Publication number: 20120027041
    Abstract: A wavelength variable laser includes: a substrate on which an optical coupler is formed as a planar optical waveguide; a DFB array part arranged on the substrate and having DFB laser elements respectively supply optical signals to the optical coupler; and an SOA part arranged on the substrate and having an SOA element configured to amplify an optical signal outputted from the optical coupler. The DFB array part and the SOA part are respectively formed in chips having a same lamination structure to each other. A wavelength variable laser and a modulator integrated wavelength variable laser with high yield ratio can be provided.
    Type: Application
    Filed: March 8, 2010
    Publication date: February 2, 2012
    Inventor: Hiroyuki Yamazaki
  • Patent number: 8093612
    Abstract: An organic EL display device forms an organic EL layer on a pixel portion by a transfer method without using a sophisticated optical system. A patterned light reflection layer is formed on a donor substrate. A light absorption layer is formed on the light reflection layer. An organic EL material layer is formed on the light absorption layer. An element substrate on which banks, lower electrodes and the like are formed is arranged to face a donor substrate in an opposed manner. When light is radiated to the donor substrate from a flash lamp or the like, only portions of the optical absorption layer where the light reflection layers are not formed are heated, and such portions of the organic EL material layer are evaporated and applied to a lower electrode formed on the element substrate. Due to such steps, the organic EL layer can be formed by a transfer method without using a sophisticated optical system.
    Type: Grant
    Filed: October 7, 2009
    Date of Patent: January 10, 2012
    Assignees: Hitachi Displays, Ltd., Panasonic Liquid Crystal Display Co., Ltd.
    Inventor: Masahiro Tanaka
  • Publication number: 20120003763
    Abstract: An apparatus comprising an electronic-photonic device. The device includes a planar substrate having a top layer on a middle layer, active electronic components and active photonic waveguide components. The active electronic components are located on first lateral regions of the top layer, and the active photonic waveguide components are located on second lateral regions of the top layer. The second-region thickness is greater than the first-region thickness. The top layer has a higher refractive index than the middle layer.
    Type: Application
    Filed: September 13, 2011
    Publication date: January 5, 2012
    Applicant: Alcatel-Lucent USA Inc.
    Inventors: Douglas M. Gill, Mahmoud Rasras
  • Publication number: 20120003762
    Abstract: A method to protect compound semiconductors from electrostatic discharge (ESD) damage, includes several processes as following: (a) forming a light emitting diode semiconductor over a substrate, in which the light emitting diode semiconductor has multi-layer structure and a first and a second electrodes; (b) forming a conductor-insulator-conductor (CIC) layers capacitance flip chip substrate including a first and a second conductive layers, and an insulator layer made of high-K material, in which the insulator layer is formed between the first and the second conductive layers, and there are a third and a fourth electrodes on the conductor-insulator-conductor layers substrate; and (c) electrically connecting the first electrode and the second electrode of the light emitting diode semiconductor to the third electrode and the fourth electrode of the conductor-insulator-conductor layers capacitance flip chip substrate, respectively, to effectively prevent from electrostatic discharge damage.
    Type: Application
    Filed: June 30, 2010
    Publication date: January 5, 2012
    Inventors: Liann-Be Chang, Cheng-Chen Lin
  • Patent number: 8090229
    Abstract: A MEMS-based display device is described, wherein an array of interferometric modulators are configured to reflect light through a transparent substrate. The transparent substrate is sealed to a backplate and the backplate may contain electronic circuitry fabricated on the backplane. The electronic circuitry is placed in electrical communication with the array of interferometric modulators and is configured to control the state of the array of interferometric modulators.
    Type: Grant
    Filed: April 22, 2011
    Date of Patent: January 3, 2012
    Assignee: QUALCOMM MEMS Technologies, Inc.
    Inventor: Karen Tyger
  • Publication number: 20110316011
    Abstract: In a light emitting device, a light emitting device unit, and a method for fabricating a light emitting device according to an embodiment of the present invention, a light emitting device (100) includes a substrate (131), a semiconductor light emitting element (121) disposed on the substrate (131), and a resistor (122) coupled to the semiconductor light emitting element (121). The resistor (122) is coupled in parallel to the semiconductor light emitting element (121). The resistor (122) has a resistance set at such a value that when a light emitting operation voltage for causing light emission of the semiconductor light emitting element (121) is applied to the semiconductor light emitting element (121), a current flowing through the resistor (122) is equal to or less than one-fiftieth of a current flowing through the semiconductor light emitting element (121).
    Type: Application
    Filed: February 26, 2010
    Publication date: December 29, 2011
    Inventors: Masayuki Ito, Masataka Miyata, Taro yamamuro, Syoji Yokota
  • Patent number: 8084282
    Abstract: Wafer-level bonding of the hybrid laser portion of a silicon photonics platform is done by forming a weakened level in a semiconductive pillar that supports laser-active layers by ion implantation into the semiconductive pillar without penetrating the laser-active layers, and by separating the laser-active layers from the semiconductive pillar by cracking the weakened level by an epitaxial lift-off processes.
    Type: Grant
    Filed: April 2, 2010
    Date of Patent: December 27, 2011
    Assignee: Intel Corporation
    Inventors: John Heck, Richard Jones, Matthew N. Sysak
  • Patent number: 8080468
    Abstract: Methods for fabricating passivated silicon nanowires and an electronic arrangement thus obtained are described. Such arrangements may comprise a metal-oxide-semiconductor (MOS) structure such that the arrangements may be utilized for MOS field-effect transistors (MOSFETs) or opto-electronic switches.
    Type: Grant
    Filed: June 23, 2010
    Date of Patent: December 20, 2011
    Assignee: California Institute of Technology
    Inventors: Axel Scherer, Sameer Walavalkar, Michael D. Henry, Andrew P. Homyk
  • Publication number: 20110306154
    Abstract: A method of forming a display device is provided.
    Type: Application
    Filed: August 19, 2011
    Publication date: December 15, 2011
    Applicant: TPO DISPLAYS CORP.
    Inventors: Tsung-Yen LIN, Chih-Hung PENG, Chien-Peng WU, Shan-Hung TSAI, Yi Chun YEH
  • Publication number: 20110303917
    Abstract: A thin film transistor substrate and a method for fabricating the same are disclosed. A thin film transistor substrate includes a substrate comprising a plurality of grooves having different depths, respectively, to have a multi-step structure; gate and data lines alternatively crossed in the grooves to form a plurality of pixel areas; thin film transistors formed in the grooves of the substrate to be formed in cross portion of the gate and data lines, wherein active layers of the thin transistors are formed along the gate lines and gate electrodes, the active layers separated from active layers of neighboring pixel areas with the data line located there between.
    Type: Application
    Filed: December 14, 2010
    Publication date: December 15, 2011
    Inventors: Shin-Bok Lee, Seung-Hee NAM, Nam-Seok LEE
  • Publication number: 20110303923
    Abstract: A thin film transistor (TFT), an array substrate including the TFT, and methods of manufacturing the TFT and the array substrate. The TFT includes an active layer, and a metal member that corresponds to a portion of each of the source region and the drain region of the active layer, and is arranged on the active layer, a portion of the metal member contacts the source and drain regions of the active layer and the source and drain electrodes, and portions of the active layer that corresponds to portions below the metal member of the active layer are not doped.
    Type: Application
    Filed: April 4, 2011
    Publication date: December 15, 2011
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: Dae-Hyun Noh, Sung-Ho Kim
  • Publication number: 20110297951
    Abstract: An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern.
    Type: Application
    Filed: May 23, 2011
    Publication date: December 8, 2011
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: Min-Chul SHIN, Jong-Moo HUH, Bong-Ju KIM, Yun-Gyu LEE
  • Publication number: 20110285284
    Abstract: The present invention relates to a light emitting device using AC, comprising: at least one LED chip and an AC driving circuit chip, wherein the AC driving circuit chip comprises a substrate and a rectifying circuit integrated on the substrate. The LED chip is flipped and bonded on the AC driving circuit chip by flip-chip technology and electrically connected to the rectifying circuit, and the AC driving circuit chip converts the AC into DC for supply to the LED chip. The present invention further relates to a method of manufacturing the light emitting device using AC, comprising the following steps of: (1) forming an LED chip; (2) integrating a rectifying circuit on a substrate, forming two power source connecting terminals on the substrate, and forming an AC driving circuit chip; and (3) flip-chip bonding the LED chip on the AC driving circuit chip and in electrical connection with the rectifying circuit on the substrate.
    Type: Application
    Filed: October 25, 2010
    Publication date: November 24, 2011
    Applicant: APT Electronics Ltd.
    Inventors: Yugang Zhou, Zhaoming Zeng, Yin Hing Lai, Chi Wing Keung, Chaojun Xu, Ruizhen Wang, Guowei David Xiao