Abstract: A metal-insulator-metal (MIM) capacitor structure includes a bottom electrode, a first oxide layer adjacent the bottom electrode, and a first high-k dielectric layer over the bottom electrode and the first oxide layer. A middle electrode is over the first high-k dielectric layer and a second oxide layer is adjacent the middle electrode. A second high-k dielectric layer may be over the middle electrode and the second oxide layer, a top electrode may be over the second high-k dielectric layer.

Abstract: An integrated circuit includes a capacitor with a bottom conductive plate and a top conductive plate. A passivation layer is disposed above the top conductive plate. An intermetal dielectric layer is disposed between the bottom conductive plate and the top conductive plate and is formed of a first dielectric material. Shield layers are disposed between the top conductive plate and above the intermetal dielectric layer and extend horizontally to at least past guard rings. The shield layers include a dielectric layer formed of dielectric material having a dielectric constant greater than the material of the intermetal dielectric layer. The shield layers include horizontally offset trenches to stop horizontal flow of current in the shield layers. The offset ensures there is no vertical path from the passivation layer to lower/ground potentials through the shield layers.

Abstract: Aspects of the subject technology relate to an apparatus including multiple cavities disposed adjacent to one another in a housing structure. The apparatus further includes a number of membranes, with each membrane disposed over a cavity to seal the cavity, and a sensor that can sense a deflection of a respective membrane associated with one of the cavities in response to an applied pressure. Each membrane is operable within a respective pressure range, and the applied pressure is within an operating range of the respective membrane.

Abstract: Methods of selectively depositing high-K gate dielectric on a semiconductor structure are disclosed. The method includes providing a semiconductor structure disposed above a semiconductor substrate. The semiconductor structure is disposed beside an isolation sidewall. A sacrificial blocking layer is then selectively deposited on the isolation sidewall and not on the semiconductor structure. Thereafter, a high-K gate dielectric is deposited on the semiconductor structure, but not on the sacrificial blocking layer. Properties of the sacrificial blocking layer prevent deposition of oxide material on its surface. A thermal treatment is then performed to remove the sacrificial blocking layer, thereby forming a high-K gate dielectric only on the semiconductor structure.

Abstract: The present disclosure is directed to a device that includes a substrate and a sensor formed on the substrate. The sensor includes a chamber formed from a plurality of integrated cavities, a membrane above the substrate, the membrane having a plurality of openings, each opening positioned above one of the cavities, and a plurality of diamond shaped anchors positioned between the membrane and the substrate, the anchors positioned between each of the cavities. A center of each opening is also a center of one of the cavities.

Abstract: In fabricating a memory device, a first electrode is provided. An alloy is formed thereon, and the alloy is oxidized to provide an oxide layer. A second electrode is provided on the oxide layer. In a further method of fabricating a memory device, a first electrode is provided. Oxide is provided on the first electrode, and an implantation step in undertaken to implant material in the oxide to form a layer including oxide and implanted material having an oxygen deficiency and/or defects therein. A second electrode is then formed on the layer.

Abstract: Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

Abstract: A method for manufacturing a semiconductor device includes forming a metal oxide semiconductor layer and a first insulating layer on a substrate. A gate is formed on the first insulating layer. The first insulating layer is patterned by using the gate as an etching mask so as to expose the metal oxide semiconductor layer to serve as a source region and a drain region. A dielectric layer is formed on the substrate to cover the gate and the oxide semiconductor layer, where the dielectric layer has at least one of hydrogen group and hydroxyl group. A heating treatment is performed so that the at least one of hydrogen group and hydroxyl group reacts with the source region and the drain region. A source electrode and a drain electrode electrically connected to the source region and the drain region respectively are formed on the dielectric layer.

Abstract: A method of forming a field effect transistor (FET) capacitor includes forming a channel region; forming a gate stack over the channel region; forming a first extension region on a first side of the gate stack, the first extension region being formed by implanting a first doping material at a first angle such that a shadow region exists on a second side of the gate stack; and forming a second extension region on the second side of the gate stack, the second extension region being formed by implanting a second doping material at a second angle such that a shadow region exists on the first side of the gate stack.

Abstract: An improved method of doping a substrate is disclosed. The method is particularly beneficial to the creation of interdigitated back contact (IBC) solar cells. A paste having a dopant of a first conductivity is applied to the surface of the substrate. This paste serves as a mask for a subsequent ion implantation step, allowing ions of a dopant having an opposite conductivity to be introduced to the portions of the substrate which are exposed. After the ions are implanted, the mask can be removed and the dopants may be activated. Methods of using an aluminum-based and phosphorus-based paste are disclosed.

Abstract: A method for fabricating a capacitor of a semiconductor device includes sequentially forming an etch-stop layer and a mold layer over a substrate, sequentially forming a support layer and a hard mask pattern over the mold layer, forming a storage node hole by etching the support layer and the mold layer using the hard mask pattern as an etch barrier, forming a barrier layer on the sidewall of the mold layer inside the storage node hole, etching the etch-stop layer under the storage node hole, forming a storage node inside the storage node hole, and removing the hard mask pattern, the mold layer, and the barrier layer.

Abstract: Methods for capacitor fabrication include doping a capacitor region of a semiconductor layer in a semiconductor-on-insulator substrate; partially etching the semiconductor layer to produce a first terminal layer comprising doped semiconductor fins on a remaining base of doped semiconductor; forming a dielectric layer over the first terminal layer; and forming a second terminal layer over the dielectric layer in a finFET process.

Abstract: An embodiment is a fuse structure. In accordance with an embodiment, a fuse structure comprises an anode, a cathode, a fuse link interposed between the anode and the cathode, and cathode connectors coupled to the cathode. The cathode connectors are each equivalent to or larger than about two times a minimum feature size of a contact that couples to an active device.

Abstract: Methods of transferring a layer of semiconductor material from a first donor structure to a second structure include forming a generally planar weakened zone within the first donor structure defined by implanted ions therein. At least one of a concentration of the implanted ions and an elemental composition of the implanted ions may be formed to vary laterally across the generally planar weakened zone. The first donor structure may be bonded to a second structure, and the first donor structure may be fractured along the generally planar weakened zone, leaving the layer of semiconductor material bonded to the second structure. Semiconductor devices may be fabricated by forming active device structures on the transferred layer of semiconductor material. Semiconductor structures are fabricated using the described methods.

Abstract: A nonvolatile memory (“NVM”) bitcell with one or more active regions capacitively coupled to the floating gate but that are separated from both the source and the drain. The inclusion of capacitors separated from the source and drain allows for improved control over the voltage of the floating gate. This in turn allows CHEI (or IHEI) to be performed with much higher efficiency than in existing bitcells, thereby the need for a charge pump to provide current to the bitcell, ultimately decreasing the total size of the bitcell. The bitcells may be constructed in pairs, further reducing the space requirements of the each bitcell, thereby mitigating the space requirements of the separate capacitor/s. The bitcell may also be operated by CHEI (or IHEI) and separately by BTBT depending upon the voltages applied at the source, drain, and capacitor/s.

Abstract: Disclosed herein are embodiments of non-planar capacitor. The non-planar capacitor can comprise a plurality of fins above a semiconductor substrate. Each fin can comprise at least an insulator section on the semiconductor substrate and a semiconductor section, which has essentially uniform conductivity, stacked above the insulator section. A gate structure can traverse the center portions of the fins. This gate structure can comprise a conformal dielectric layer and a conductor layer (e.g., a blanket or conformal conductor layer) on the dielectric layer. Such a non-planar capacitor can exhibit a first capacitance, which is optionally tunable, between the conductor layer and the fins and a second capacitance between the conductor layer and the semiconductor substrate. Also disclosed herein are method embodiments, which can be used to form such a non-planar capacitor and which are compatible with current state of the art multi-gate non-planar field effect transistor (MUGFET) processing.

Abstract: A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.

Abstract: Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

Abstract: A semiconductor device includes capacitors connected in parallel. Electrode active portions and a discharge active portion are defined on a semiconductor substrate, and capping electrodes are disposed respectively on the electrode active portions. A capacitor-dielectric layer is disposed between each of the capping electrodes and each of the electrode active portions that overlap each other. A counter doped region is disposed in the discharge active portion. A lower interlayer dielectric covers the entire surface of the semiconductor substrate. Electrode contact plugs respectively contact the capping electrodes through the lower interlayer dielectric, and a discharge contact plug contacts the counter doped region through the lower interlayer dielectric. A lower interconnection is disposed on the lower interlayer dielectric and contacts the electrode contact plugs and the discharge contact plug.

Abstract: A method of forming an embedded DRAM cell having multiple-thickness gate dielectrics. An oxidation-enhancing dopant is selectively implanted into a well region in an area that is exposed by a first mask. A thermal oxidation step simultaneously produces the field dielectric for two distinct devices each having a different oxide thickness. The method is applicable to quad-density DRAM cells using fewer oxidation steps. The method is also applicable to planar DRAM cells, and does not require increasing the number of masks during the fabrication of planar DRAM cells.

Abstract: Methods of forming a top oxide around a charge storage material layer of a memory cell and methods of improving quality of a top oxide around a charge storage material layer of a memory cell are provided. The method can involve providing a charge storage layer on a semiconductor substrate, a nitride layer on the charge storage layer, and a first poly layer on the nitride layer, and converting at least a portion of the nitride layer to a top oxide. By converting at least a portion of a nitride layer to a top oxide layer, the quality of the resultant top oxide layer can be improved.

Abstract: Techniques for using gate arrays to create capacitive structures within an integrated circuit are disclosed. Embodiments comprise placing a gate array of P-type field effect transistors (P-fets) and N-type field effect transistors (N-fets) in an integrated circuit design, coupling drains and sources for one or more P-fets and gates for one or more N-fets to a power supply ground, and coupling gates for the one or more P-fets and the drains and sources for one or more N-fets to a positive voltage of the power supply. In some embodiments, source-to-drain leakage current for capacitive apparatuses of P-fets and N-fets are minimized by biasing one or more P-fets and one or more N-fets to the positive voltage and the ground, respectively. In other embodiments, the capacitive structures may be implemented using fusible elements to isolate the capacitive structures in case of shorts.

Abstract: A decoupling capacitor includes a pair of MOS capacitors formed in wells of opposite plurality. Each MOS capacitor has a set of well-ties and a high-dose implant, allowing high frequency performance under accumulation or depletion biasing. The top conductor of each MOS capacitor is electrically coupled to the well-ties of the other MOS capacitor and biased consistently with logic transistor wells. The well-ties and/or the high-dose implants of the MOS capacitors exhibit asymmetry with respect to their dopant polarities.

Abstract: A semiconductor device includes a semiconductor substrate having a conductive type, a source metal layer, a gate metal layer, at least one transistor device, a heavily doped region having the conductive type, a capacitor dielectric layer, a conductive layer. The source metal layer and the gate metal layer are disposed on the semiconductor substrate. The transistor device is disposed in the semiconductor substrate under the source metal layer. The heavily doped region, the capacitor dielectric layer and the conductive layer constitute a capacitor structure, disposed under the gate metal layer, and the capacitor structure is electrically connected between a source and a drain of the transistor device.

Abstract: An integrated circuit arrangement contains an insulating region, which is part of a planar insulating layer, and a capacitor which contains: near and far electrode regions near and remote from the insulating region and a dielectric region. The capacitor and an active component are on the same side of the insulating layer, and the near electrode region and an active region of the component are planar and parallel to the insulating layer. The near electrode region is monocrystalline and contains multiple webs.

Abstract: A dynamic random access memory (DRAM) cell and the method of manufacturing the same are provided. The DRAM cell includes a cell transistor and a cell capacitor. The cell capacitor includes a first, second and third dielectric layer, and a first, second and third capacitor electrode. The first dielectric layer is located on a first capacitor electrode. The second capacitor electrode is located on top of the first dielectric layer. The second dielectric layer is located on the second capacitor electrode. The third capacitor electrode is located on the second dielectric layer and is electrically connected with the drain. The third dielectric layer is located between the third capacitor electrode and the gate for isolating the gate from the third capacitor electrode.

Abstract: A MIM capacitor is formed on a semiconductor substrate having a top surface and including regions formed in the surface selected from a Shallow Trench Isolation (STI) region and a doped well having exterior surfaces coplanar with the semiconductor substrate. A capacitor lower plate is either a lower electrode formed on the STI region in the semiconductor substrate or a lower electrode formed by a doped well formed in the top surface of the semiconductor substrate that may have a silicide surface. A capacitor HiK dielectric layer is formed on or above the lower plate. A capacitor second plate is formed on the HiK dielectric layer above the capacitor lower plate. A dual capacitor structure with a top plate may be formed above the second plate with vias connected to the lower plate protected from the second plate by side wall spacers.

Abstract: An integrated circuit arrangement contains an insulating region, which is part of a planar insulating layer, and a capacitor which contains: near and far electrode regions near and remote from the insulating region and a dielectric region. The capacitor and an active component are on the same side of the insulating layer, and the near electrode region and an active region of the component are planar and parallel to the insulating layer. The near electrode region is monocrystalline and contains multiple webs. Alternately, a FET is present in which: a channel region is the active region, the FET contains a web with opposing control electrodes connected by a connecting region that is isolated from the channel region by a thick insulating region. The thick insulating region is thicker than control electrode insulation regions. The control electrodes contain the same material as the far electrode region.

Abstract: A semiconductor device in which a semiconductor layer of a thin film transistor and a first electrode of a capacitor are formed of amorphous silicon and the whole or a part of source/drain regions of the semiconductor layer and the first electrode of the capacitor are crystallized by a metal induced crystallization method, and a channel region of the semiconductor layer is crystallized by a metal induced lateral crystallization method.

Abstract: A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.

Abstract: The invention includes methods of forming channel region implants for two transistor devices simultaneously, in which a mask is utilized to block a larger percentage of a channel region location of one of the devices relative to the other. The invention also pertains to methods of forming capacitor structures in which a first capacitor electrode is spaced from a semiconductor substrate by a dielectric material, a second capacitor electrode comprises a conductively-doped diffusion region within the semiconductor material, and a capacitor channel region location is beneath the dielectric material and adjacent the conductively-doped diffusion region. An implant mask is formed to cover only a first portion of the capacitor channel region location and to leave a second portion of the capacitor channel region location uncovered. While the implant mask is in place, dopant is implanted into the uncovered second portion of the capacitor channel region location.

Abstract: An integrated circuit memory cell includes a combined first capacitor electrode and first transistor source/drain, a second capacitor electrode, a capacitor dielectric between the first and second electrodes, and a vertical transistor above and including the first source/drain. The second source/drain may be included in a digit line inner conductor connecting a digit line to a transistor channel of the vertical transistor. The channel may include a semiconductive upward extension of the combined first electrode and first source/drain. The memory cell may be included in an array of a plurality of such memory cells wherein the second electrode is a common electrode among the plurality. The memory cell may provide a straight-line conductive path between the first electrode and a digit line, the path extending through the vertical transistor.

Abstract: A method of forming a metal-oxide-semiconductor (MOS) device is provided. The method includes the following steps. First, a conductive type MOS transistor is formed on a substrate. Then, a first etching stop layer is formed over the substrate to cover conformably the conductive type MOS transistor. Thereafter, a stress layer is formed over the first etching stop layer. Then, a second etching stop layer is formed over the stress layer.

Abstract: An integrated circuit arrangement contains an insulating region, which is part of a planar insulating layer, and a capacitor which contains: near and far electrode regions near and remote from the insulating region and a dielectric region. The capacitor and an active component are on the same side of the insulating layer, and the near electrode region and an active region of the component are planar and parallel to the insulating layer. The near electrode region is monocrystalline and contains multiple webs.

Abstract: A method for fabricating non-volatile memory cells is provided. The method includes providing a substrate, forming a first dopant region in the substrate, forming a second dopant region in the first dopant region, growing a first isolation region over a first portion of the substrate, the first dopant region, and the second dopant region, growing a second isolation region over a second portion of the substrate, the first dopant region, and the second dopant region, defining a contact region in the second dopant region, the contact region extending between the first isolation region and the second isolation region, depositing a gate oxide layer to form a first gate dielectric atop the first isolation region and a portion of the contact region, and overlaying a gate conductive layer on top of the gate oxide layer to form a first gate conductor atop the first gate dielectric.

Abstract: A method of forming a capacitor for use as a charge pump with flash memory, comprising: (a) concurrently forming polysilicon gates on a semiconductor body in a core region and a polysilicon middle capacitor plate in a peripheral region, (b) forming a first dielectric layer over the polysilicon gates and the middle capacitor plate, (c) planarizing the first dielectric layer to expose a top portion of the polysilicon gates and a top portion of the middle capacitor plate, (d) forming a second dielectric layer over the top portion of the middle capacitor layer, (e) concurrently forming patterning a second polysilicon layer in the core region and a third capacitor plate in the periphery region and (f) connecting the third capacitor plate to the source/drain well.

Abstract: A method for making a semiconductor structure of a memory device includes forming a capacitor having a gate dielectric between a gate conductor and a dopant region of a first conductivity type located in another dopant region of a second conductivity type, forming a bipolar transistor having a base region of the first conductivity type, and forming a field-effect transistor having a gate conductor coupled to the gate conductor of the capacitor, wherein the dopant region and the base region of the first conductivity type are formed in the same step to avoid additional cost in forming the capacitor.

Abstract: An integrated circuit memory cell includes a combined first capacitor electrode and first transistor source/drain, a second capacitor electrode, a capacitor dielectric between the first and second electrodes, and a vertical transistor above and including the first source/drain. The second source/drain may be included in a digit line inner conductor connecting a digit line to a transistor channel of the vertical transistor. The channel may include a semiconductive upward extension of the combined first electrode and first source/drain. The memory cell may be included in an array of a plurality of such memory cells wherein the second electrode is a common electrode among the plurality. The memory cell may provide a straight-line conductive path between the first electrode and a digit line, the path extending through the vertical transistor.

Abstract: A method for forming a capacitor includes forming a dielectric layer over a substrate. A conductive layer is formed over the dielectric layer. Dopants are implanted through at least one of the dielectric layer and the conductive layer after forming the dielectric layer so as to form a conductive region under the dielectric layer, wherein the conductive layer is a top electrode of the capacitor and the conductive region is a bottom electrode of the capacitor.

Abstract: Provided are a layout method of a power line for a semiconductor integrated circuit and a semiconductor integrated circuit manufactured by the layout method. The layout method includes the steps of: forming a decoupling capacitor on a substrate; laying out a first metal layer, connected to the decoupling capacitor through a contact, above a region where the decoupling capacitor is formed so as to cover the decoupling capacitor; and laying out a second metal layer above a region where the first metal layer is formed. Therefore, the metal layers and the decoupling capacitor are laid out in the same region so that a chip area can be prevented from being additionally consumed at the time of laying out the decoupling capacitor, and degradation which may occur due to connection line resistance from the power lines to the decoupling capacitors can be prevented.

Abstract: A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.

Abstract: A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g., ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the metal oxide regions are formed by diffusion of oxygen through grain boundaries of the metal layer, e.g., platinum, to oxidize a metal layer thereon, e.g., ruthenium layer. The structure is particularly advantageous for use in capacitor structures and memory devices, such as dynamic random access memory (DRAM) devices.

Abstract: The invention is to prevent dielectric breakdown of a capacitor in a semiconductor device having the capacitor and a MOS transistor formed on a same semiconductor substrate. A SiO2 film that is to be a gate insulation film of a high voltage MOS transistor is formed on a whole surface of a P-type semiconductor substrate. A photoresist layer is selectively formed in a high voltage MOS transistor formation region and on a part of a SiO2 film covering edges of trench isolation films adjacent to a capacitor formation region, and the SiO2 film is removed by etching using this photoresist layer as a mask. Since the photoresist layer functions as a mask in this etching, the edges of the trench isolation films adjacent to the capacitor are not cut too deep. The SiO2 film remaining in this etching and a SiO2 film to be formed thereafter form a capacitor insulation film.

Abstract: The present invention relates to a capacitor in semiconductor device and a method of manufacturing the same, wherein, owing to formation of a lower electrode and an upper electrode into a stack structure of a poly-silicon layer and an aluminum (Al) layer and formation of an alumina (Al2O3) film as a dielectric film, the lower electrode is formed into a stack structure of the poly-silicon layer-aluminum (Al) layer, thus increasing a surface area of electrodes due to the absence of oxidation during annealing, and preventing degeneration of the device, and use of the dielectric film including a high-dielectric constant material layer enables reduction of the dielectric film's thickness. Accordingly, the present invention is capable of increasing capacitance, is capable of reducing leakage current and improving dielectric breakdown characteristics via internal formation of an MIM capacitor, and is capable of reducing production costs by performing a continuous process via use of a single piece of equipment.

Abstract: A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.

Abstract: A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.

Abstract: A plasma display panel includes front and rear substrates parallel to one another, a plurality of discharge electrode pairs on the front substrate, a plurality of discharge cells between the front and rear substrates, a front dielectric layer having a plurality of grooves on the discharge electrode pairs, and a protective layer on the front dielectric layer, the protective layer having first protective layer portions on a first front dielectric layer portion of the front dielectric layer, second protective layer portions on a second front dielectric layer portion of the front dielectric layer, and third protective layer portions, wherein at least one thickness of the first protective layer portions and the third protective layer portions is larger than a thickness of the second protective layer portions.

Abstract: In one embodiment, a method of fabricating a transistor for a memory cell includes the steps of performing a counter doping implant before or after a source/drain implant. The counter doping implant may comprise one or more implant steps that move a metallurgical junction formed by a well and a highly doped region closer to a surface of the substrate. The counter doping implant may also increase the concentration of the dopant of the well. The counter doping implant and the source/drain implant may be performed using the same mask. Transistors fabricated using embodiments of the present invention may be employed in memory cells to reduce soft error rates.

Abstract: A method (10) of forming a MIM (metal insulator metal) capacitor is disclosed whereby adverse affects associated with copper diffusion are mitigated even as the capacitor is scaled down. A sidewall spacer (156) is formed against an edge (137) of a layer of bottom electrode/copper diffusion barrier material (136), an edge (151) of a layer of capacitor dielectric material (150) and at least some of an edge (153) of a layer of top electrode material. The sidewall spacer (156) is dielectric or non-conductive and mitigates “shorting” currents that can develop between the plates as a result of copper diffusion. Bottom electrode diffusion barrier material (136) mitigates copper diffusion and/or copper drift, thereby reducing the likelihood of premature device failure.

Abstract: A transistor including a semiconductor substrate defined with an active region and a device isolation region, a gate formed on the semiconductor substrate, an insulating spacers formed on respective side walls of the gate, and source/drain junctions formed in the semiconductor substrate at opposite sides of the gate, the source/drain junctions having asymmetrical junction structures, respectively, wherein the gate has a lower portion arranged on the active region of the substrate, the lower gate portion having a stepped profile having a lower surface, an upper surface and a vertically-extending side surface. The invention also provides a method for manufacturing this transistor. In accordance with this transistor structure, an increase in the dopant concentration of a storage node is prevented. Accordingly, a reduction in the amount of leakage current is achieved, so that an improvement in the refresh characteristics of the transistor is achieved.