Abstract: A light emitting element unit according to the present invention includes a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted, a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element, and a light reflecting film formed on the inclined surface of the submount.

Abstract: A multichip package structure includes a substrate unit, a light-emitting unit, a control module, a frame unit and a package unit. The substrate unit includes a first chip-placing region and a second chip-placing region. The light-emitting unit includes a plurality of light-emitting chips electrically connected to the first chip-placing region. The control module includes at least one current-limiting unit and the rectifier unit electrically connected to the second chip-placing region and the light-emitting unit. The frame unit includes a first annular colloid frame surrounding the light-emitting chips and a second annular colloid frame surrounding the current-limiting unit and the rectifier unit. The package unit includes a first package colloid body surrounded by the first annular colloid frame to cover the light-emitting chips and a second package colloid body surrounded by the second annular colloid frame to cover the current-limiting unit and the rectifier unit.

Abstract: A system and method for encapsulating an organic light-emitting diode (OLED) device by enabling a substrate and a plurality of masks to be efficiently received into a vacuum processing environment, transferred between one or more process chambers for the deposition of encapsulating layers, and removed from the processing system. A method of encapsulating an organic light-emitting diode (OLED) device includes positioning one or more masks over a substrate to deposit encapsulating layers on an OLED device disposed on the substrate. A processing system for encapsulating an organic light-emitting diode (OLED) device includes one or more transfer chambers, one or more load lock chambers coupled to each transfer chamber and operable to receive a mask into a vacuum environment, and one or more process chambers coupled to each transfer chamber and operable to deposit an encapsulating layer on a substrate.

Abstract: A low-cost and productivity-oriented surface mount light-emitting device is provided. The light-emitting device includes an insulating film 2, at least one pair of land portions 3a and 3b comprising metal film pieces formed on the top surface of the insulating film 2, external connection terminal portions 4a and 4b comprising metal film pieces formed on the bottom surface of the insulating film 2, that are opposed to the land portions 3a and 3b across the insulating film 2 in one-to-one correspondence, through-conductors 7a and 7b that connect between the land portions 3a and 3b and the terminal portions 4a and 4b corresponding to each other through the insulating film 2, and a light-emitting element 10 that is electrically connected to the pair of the land portions 3a and 3b and disposed in a unit section which contains the pair of the land portions 3a and 3b.

Abstract: An optical data system and method are disclosed. The system can be an integrated optical data transmission system that includes an array of lasers that are modulated by a plurality of modulation signals to provide a plurality of sets of optical data signals. Each of the optical data signals in each of the plurality of sets can have a distinct wavelength. The system can also include a wavelength division multiplexing system to combine each of the plurality of sets of optical data signals to generate a plurality of multi-channel optical data signals that are transmitted via a respective plurality of optical transmission media.

Abstract: LED packaging construction includes a substrate, a cavernous construction, a LED, and a reflection layer. The substrate is daubed with an insulation layer and a circuit layer on a surface on the substrate, wherein the substrate is made of metal, and the insulation layer is disposed between the circuit layer and the substrate. The cavernous construction is disposed on the substrate and surrounds the LED, and is formed by disposing a photoresist layer and patterning the photoresist layer. The circuit layer electrically connects the LED through a conducting wire. The reflection layer is at least disposed on a first surface of the cavernous construction, wherein the first surface surrounds the LED and faces toward the LED, and a part of light emitted from the LED is reflected by the reflection layer.

Abstract: A chip package structure includes a package body, a first lead and a second lead. Elements embedded inside the package body include a core circuit having at least one first connection terminal, at least one ESD protection circuit having at least one second connection terminal, at least one third connection terminal and at least one interconnection structure. The interconnection structure is electrically connected to the second connection terminal and the third connection terminal. The first lead on the package body is electrically connected to the second connection terminal and an external circuit. The second lead on the package body electrically connects the first connection terminal and the third connection terminal. The second lead and the first lead are separate in structure.

Abstract: A method of manufacturing an OLED device is discussed. The method can include forming a gate electrode on a substrate; forming a gate insulation film on the substrate provided with the gate electrode; forming a channel layer, a source electrode and a drain electrode on the substrate provided with the gate insulation film; forming an organic light emitting diode which includes a first electrode connected to the drain electrode, an organic emission layer formed on the first electrode, and a second electrode formed on the organic emission layer; forming a passivation layer, which has a hydrogen content below 10%, on the substrate provided with the organic light emitting diode using an organic silicon compound; and forming a sealing layer on the substrate provided with the passivation layer.

Abstract: A method for producing a light-emitting diode is provided, including the following steps. First, a carrier is provided, wherein the carrier comprises a die bonding surface. Then, a die bonding adhesive layer is formed on the die bonding surface, wherein the die bonding adhesive layer has a photoresist property. Next, at least one lighting chip is disposed on the die bonding adhesive layer, and an uncovered portion of the die bonding adhesive layer is not covered by the lighting chip. Finally, the uncovered portion of the die bonding adhesive layer is removed.

Abstract: An LED module includes a substrate, one or more LED chips supported by a main surface of the substrate, and wirings. The substrate has one or more through holes penetrating from the main surface to a rear surface. The wirings are formed on the substrate and make electrical conduction with the LED chips. The wirings include pads which are formed on the main surface and make electrical conduction with the LED chips, rear surface electrodes which are formed on the rear surface, and through wirings which make electrical conduction between the pads and the rear surface electrodes and are formed on the inner sides of the through holes.

Abstract: The invention relates to an optoelectronic semiconductor component, comprising a substrate-free optoelectronic semiconductor chip (1), which has a first main surface (1a) on an upper face and a second main surface (1b) on a lower face, and a metal carrier (2), which is arranged on the lower face of the optoelectronic semiconductor chip (1), wherein the metal carrier (2) protrudes over the optoelectronic semiconductor chip (1) in at least one lateral direction (1) and the metal carrier (2) is deposited on the second main surface (1b) of the optoelectronic semiconductor chip (1) using a galvanic or electroless plating method.

Abstract: A transparent LED wafer module and a method for manufacturing the same are provided. In a conductor LED device epitaxial process, the conductor LED device is grown on a transparent material wafer, where both surfaces of the conductor LED device are entirely grown on the transparent material, and then a transparent glass substrate is restacked, thereby securing a high amount of light.

Abstract: An optoelectronic device comprising at least one optoelectronic active region comprising at least a rear electrode and a front electrode between which an organic optoelectronic material is sandwiched, said rear electrode being reflective, and a cover layer arranged in front of said front electrode. The cover layer comprises a material with light-scattering particles of a first material dispersed in a transparent matrix of at an least partly hydrolyzed silica sol. Due to the highly scattering propertied of the cover layer, the device is essentially concealed behind the cover layer when not in its operative state.

Abstract: A method of and a system for making LED comprising concurrently forming multiple dam structures on a whole silicon wafer using a liquid transfer mold, attaching dies to the silicon wafer inside each of the dam structure, performing flux reflow, cleaning flux, performing wire bonding, dispensing phosphor, curing the phosphor, concurrently forming dome structures by using a liquid transfer mold on all of the dam structures, mounting wafer, and using a saw for single or multiple LED(s) singulation.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, a p-side electrode, a plurality of n-side electrodes, a first insulating film, a p-side interconnect unit, and an n-side interconnect unit. The p-side interconnect unit is provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film. The n-side interconnect unit is provided on the first insulating film to commonly connect to the plurality of n-side electrodes through a second via piercing the first insulating film. The plurality of n-side regions is separated from each other without being linked at the second surface. The p-side region is provided around each of the n-side regions at the second surface.

Abstract: [Problem] A conventional sheet-like adhesive has low adhesion to an adherend and, at the same time, is required to be heated at a high temperature of 100° C. or higher when adhered to an adherend, and hence, when an adherend is an electronic part with deterioration by a high temperature, damage to the adherend is large. In addition, since a sheet-like adhesive in the B-stage hardly exhibited flowability when heating, bubbles may be remained when there is unevenness on an adherend. [Solution] A heat curable sheet-like adhesive for an organic EL panel, comprising components (A) to (C), which has tack in the surface of a composition comprising the components (A) to (C) at 25° C.: the component (A): a film forming component having an epoxy equivalent of 7000 to 20000 g/eq and having compatibility with the component (B); the component (B): an epoxy resin having an epoxy equivalent of 150 to 5000 g/eq and comprising 0 to 20% by weight of a solid epoxy resin at 25° C.

Abstract: A semiconductor light-emitting element includes a substrate, a first metal layer, a second metal layer, a translucent conductive layer, and a semiconductor layer with a light-emitting region. The translucent conductive layer includes an end face intersecting a plane orthogonal to the thickness direction of the substrate. The substrate includes an end face intersecting a plane orthogonal to the thickness direction. The end face of the translucent conductive layer is located inwardly of the end face of the substrate as viewed in the thickness direction.

Abstract: Light emitting devices and methods of integrating micro LED devices into light emitting device are described. In an embodiment a light emitting device includes a reflective bank structure within a bank layer, and a conductive line atop the bank layer and elevated above the reflective bank structure. A micro LED device is within the reflective bank structure and a passivation layer is over the bank layer and laterally around the micro LED device within the reflective bank structure. A portion of the micro LED device and a conductive line atop the bank layer protrude above a top surface of the passivation layer.

Abstract: The present embodiments provide surface mount devices and/or systems. In some embodiments, the surface mount devices comprise a casing having a recess formed extending at least partially into said casing; and first and second leads each of which is at least partially encased by said casing and each of which has a portion exposed through said recess, wherein at least one of said first and second leads has one or more size reduction features in its said exposed portion that reduces the surface area to provide an increased surface bonding area to said casing around said lead.

Abstract: Disclosed is a light emitting module capable of representing improved heat radiation and improved light collection. there is provided a light emitting module. The light emitting module includes a metallic circuit board formed therein with a cavity, and a light emitting device package including a nitride insulating substrate attached in the cavity of the metallic circuit board, at least one pad part on the nitride insulating substrate, and at least one light emitting device attached on the pad part.

Abstract: The invention relates to a sealed thin-film device (10, 12, 14), to a method of repairing a sealing layer (20) applied to a thin-film device (30) to produce the sealed thin-film device, to a system (200) for repairing the sealing layer applied to the thin-film device to generate the sealed thin-film device and to a computer program product. The sealed thin-film device comprises a thin-film device and a sealing layer applied on the thin-film device for protecting the thin-film device from environmental influence. The sealed thin-film device further comprises locally applied mending material (40; 42, 44) for sealing a local breach (50) in the sealing layer. An effect of this sealed thin-film device is that the operational life-time of the sealed thin-film device is improved. Furthermore, the production yield of the production of sealed thin-film devices is improved.

Abstract: A fiber coupled semiconductor device and a method of manufacturing of such a device are disclosed. The method provides an improved stability of optical coupling during assembly of the device, whereby a higher optical power levels and higher overall efficiency of the fiber coupled device can be achieved. The improvement is achieved by attaching the optical fiber to a vertical mounting surface of a fiber mount. The platform holding the semiconductor chip and the optical fiber can be mounted onto a spacer mounted on a base. The spacer has an area smaller than the area of the platform, for mechanical decoupling of thermally induced deformation of the base from a deformation of the platform of the semiconductor device. Optionally, attaching the fiber mount to a submount of the semiconductor chip further improves thermal stability of the packaged device.

Abstract: Disclosed is a light-emitting device comprising a light-emitting element (10) composed of a gallium nitride compound semiconductor having an emission peak wavelength of not less than 430 nm; a molded body (40) provided with a recessed portion having a bottom surface on which the light-emitting element (10) is mounted and a lateral surface; and a sealing member (50) containing an epoxy resin including a triazine derivative epoxy resin, or a silicon-containing resin. The molded body (40) is obtained by using a cured product of a thermosetting epoxy resin composition essentially containing an epoxy resin including a triazine derivative epoxy resin, and has a reflectance of not less than 70% at the wavelengths of not less than 430 nm.

Abstract: A method of manufacturing a light-emitting device includes forming a first optical element on a first carrier, wherein the first optical element comprises an opening; forming a light-emitting element in the opening; forming a second optical element on the light-emitting element; forming a second carrier on the first optical element and the second optical element; removing the first carrier after forming the second carrier on the first optical element and the second optical element; and forming two separated conductive structures under the first optical element.

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. A stabilization layer includes an array of stabilization cavities and array of stabilization posts. Each stabilization cavity includes sidewalls surrounding a stabilization post. The array of micro devices is on the array of stabilization posts. Each micro device in the array of micro devices includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.

Abstract: A micro-electromechanical component includes: an electrically conductive substrate having an upper side and an underside; a structured electrically conductive first functional layer fashioned on the upper side of the substrate; an elastically deflectable actuator device suspended via a spring device fashioned in the first functional layer; a movable first electrode device extending vertically through the substrate and connected to the actuator device; and a stationary second electrode device extending vertically through the substrate, at a distance from the first electrode device, the actuator device being configured to be deflected through the application of an electrical voltage between the first and the second electrode device.

Abstract: An emitter package comprising a light emitting diode (LED) mounted to the surface of a submount with the surface having a first meniscus forming feature around the LED. A matrix encapsulant is included on the surface and covering the LED. The outer edge of the matrix encapsulant adjacent the surface is defined by the meniscus forming feature and the encapsulant forms a substantially dome-shaped covering over said LED. A method for manufacturing an LED package by providing a body with a surface having a first meniscus holding feature. An LED is mounted to the surface with the meniscus holding feature around the LED. A liquid matrix encapsulant is introduced over the LED and the surface, the first meniscus holding feature holding the liquid matrix encapsulant in a dome-shape over the LED. The matrix encapsulant is then cured.

Abstract: An organic light-emitting component includes a substrate on which a functional layer stack is applied, the stack including a first electrode, an organic functional layer stack thereover including an organic light-emitting layer and a translucent second electrode thereover, and a translucent halogen-containing thin-film encapsulation arrangement over the translucent second electrode, wherein a translucent protective layer having a refractive index of more than 1.6 is arranged directly on the translucent second electrode between the translucent second electrode and the thin-film encapsulation arrangement.

Abstract: Methods for packaging a functional chip, methods for annealing a functional chip, and chip assemblies. A functional chip and an annealing chip are located inside a package. The functional chip includes an integrated circuit. The annealing chip includes an annealing element source comprised of an annealing element or a light source configured to emit electromagnetic radiation. The integrated circuit of the functional chip receives the annealing element, electromagnetic radiation, or both from the annealing chip in order to perform an annealing procedure that extends the useful lifetime of the packaged integrated circuit.

Abstract: Various embodiments may relate to a device for the surface treatment of a substrate, including a processing head, which is mounted rotatably about an axis of rotation, and which comprises multiple gas outlets, which are at least partially implemented on a radial outer edge of the processing head.

Abstract: Disclosed is a display apparatus. The display apparatus includes: a display module including a flexible substrate, a display panel, and an encapsulation film; a lower module disposed below the display module; an upper module disposed on the display module; and an elasticity-adjusting layer disposed on or below the display module to adjust a position of a neutral plane in bending of the display apparatus, wherein an elastic modulus of the elasticity-adjusting layer is less than that of at least one of the display module, the lower module, or the upper module, so as to position the neutral plane within or proximate to the display module.

Abstract: An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.

Abstract: An organic light emitting diode display includes a first substrate, an organic light emitting diode on the first substrate, a capping layer on the organic light emitting diode. The capping layer includes a first surface facing the organic light emitting diode and a second surface opposite the first surface. The capping layer has a gradient of refractive index that varies along a thickness direction from the first surface toward the second surface.

Abstract: An organic EL light emitting device includes a transparent substrate, a transparent electrode film formed on the substrate, a positive electrode contact portion in contact with a part of the transparent electrode film and electrically connected therewith, an insulating layer formed on the transparent electrode film such that the an insulating layer covers a portion excluding a light emitting part, an organic light emitting layer formed on the transparent electrode film and on the insulating layer, a negative electrode film formed on the organic light emitting layer, a negative electrode contact portion in contact with at least a part of the negative electrode film and electrically connected therewith, and a protective layer for separating and electrically insulating the positive electrode contact portion and the transparent electrode film from the negative electrode contact portion.

Abstract: A low temperature, low cost method of encapsulating organic light emitting diodes (OLED) that avoids damage to the OLED device. One method comprises forming a metal passivation layer using a plasma, UV-ozone, or wet chemical treatment, wherein the metal passivation layer serves to encapsulate and protect the OLED from moisture and oxygen. Another method comprises forming a buffer layer and a metal layer onto the OLED and then treating the metal layer using a plasma, UV-ozone, or wet chemical treatment, to form a metal passivation layer that serves to encapsulate and protect the OLED from moisture and oxygen.

Abstract: A method of producing a bulk semiconductor material comprises the steps of providing a base comprising a substantially planar substrate having a plurality of etched nano/micro-structures located thereon, each structure having an etched, substantially planar sidewall, wherein the plane of each said etched sidewall is arranged at an oblique angle to the substrate, and selectively growing the bulk semiconductor material onto the etched sidewall of each nano/micro-structure using an epitaxial growth process. A layered semiconductor device may be grown onto the bulk semiconductor material.

Abstract: A device having a carrier, a light-emitting structure, and first and second electrodes is disclosed. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength in the active layer when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The first and second electrodes are bonded to the surfaces of the p-type and n-type GaN layers that are not adjacent to the active layer. The n-type GaN layer has a thickness less than 1.25 ?m. The carrier is bonded to the light emitting structure during the thinning of the n-type GaN layer. The thinned light-emitting structure can be transferred to a second carrier to provide a device that is analogous to conventional LEDs having contacts on the top surface of the LED.

Abstract: An organic Electro Luminescence device that equalizes heat generated in an organic EL element while preventing the intrusion of moisture. A light emitting element is covered with an inorganic sealing layer, an adhesive layer, an insulating resin film, and a metallic foil. The organic EL device includes a current carrying area located outside and along an edge of an emission area. A heat-conductive sealing stacked layer structure is formed in the current carrying area and includes the following layers in direct contact with each other in the following order: a first electrode layer extended from the emission area, auxiliary electrode layers having heat conductivity larger than that of the first electrode layer, the inorganic sealing layer, the adhesive layer, and a heat-conductive sealing layer. The heat-conductive sealing stacked layer structure having a linear shape is located near at least one side of a transparent substrate.

Abstract: An integrated lighting apparatus comprises a first control device including a semiconductor substrate, an integrated circuit block formed above a first portion of the semiconductor substrate, and a plurality of power pads formed above the integrated circuit block; a first light emitting device formed above a second portion of the semiconductor substrate; and a through plug passing through the semiconductor substrate for electrically connecting the first control device and the first light emitting device.

Abstract: Disclosed herein is a method of disposing phosphor layers, which can prevent damage to phosphors and also effectively dispose phosphor layers at desired locations of Light-Emitting Diodes (LEDs) when the phosphor layers are detached and disposed at the top surfaces of the LEDs. According to an embodiment, phosphor layers fabricated by filling phosphor layer pattern holes within an area of the vertical frame with a phosphor solution are detached from the phosphor layer pattern holes by applying force downwardly or upwardly in a vertical manner.

Abstract: Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

Abstract: A light emitting apparatus and a production method of the apparatus are provided that can emit light with less color unevenness at high luminance. The apparatus includes a light emitting device, a transparent member receiving incident light emitted from the device, and a covering member. The transparent member is formed of an inorganic material light conversion member including an externally exposed emission surface, and a side surface contiguous to the emission surface. The covering member contains a reflective material, and covers at least the side surfaces of the transparent member. Substantially only the emission surface serves as the emission area of the apparatus. It is possible to provide emitted light having excellent directivity and luminance. Emitted light can be easily optically controlled. In the case where each light emitting apparatus is used as a unit light source, the apparatus has high secondary usability.

Abstract: An organic light emitting diode (OLED) display including: a substrate including a pixel area; a peripheral area enclosing the pixel area; a gate line; a data line; corresponding driving lines; a pixel electrode; an organic light emitting layer; a common electrode; and a getter formed at the peripheral area and partially overlapping the common electrode, wherein the driving lines overlapping the getter have a plurality of openings filled with the getter such that the getter amount may be increased, thereby increasing the moisture absorption amount.

Abstract: The present disclosure provides a light-emitting diode package, including: a carrier; a light-emitting diode chip disposed over the carrier and electrically connected to the carrier, wherein the light-emitting diode chip includes at least two recesses at corners located on a diagonal line of the light-emitting diode chip; a eutectic layer disposed between the light-emitting diode chip and the carrier, wherein the eutectic layer includes at least two metal pillars embedded into the at least two recesses respectively, wherein an upper portion of the metal pillars covers a portion of a top surface of the light-emitting diode chip. The present disclosure also provides a method for manufacturing a light-emitting diode package.

Abstract: A contactless information medium includes: a body forming an outer shape of the contactless information medium; an IC chip housed in the body; a coil antenna which is formed of a string of conductive wire, both ends of the conductive wire being connected to the IC chip, and which includes a main arrangement pattern provided along a closed curve and a plurality of sub-arrangement patterns, each of which has a smaller diameter than the main arrangement pattern; and a plurality of bobbins provided in the body and arranged along the closed curve, the string of conductive wire being wound around the plurality of bobbins along the closed curve to form the main arrangement pattern, the string of conductive wire being wound around each of the bobbins to form the sub-arrangement patterns.

Abstract: A method including a printed circuit board electrically coupled to a bottom of a laminate substrate, the laminate substrate having an opening extending through the entire thickness of the laminate substrate, a main die electrically coupled to a top of the laminate substrate, a die stack electrically coupled to a bottom of the main die, the die stack including one or more chips stacked vertically and electrically coupled to one another, the die stack extending into the opening of the laminate substrate, and an interposer positioned between and electrically coupled to a topmost chip and the printed circuit board, the interposer providing an electrical path from the printed circuit board to the topmost chip of the die stack.

Abstract: A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device.

Abstract: Provided is an organic light-emitting apparatus. The organic light-emitting apparatus includes: a substrate; an organic light-emitting device provided on the substrate and including a first electrode, a second electrode, and an intermediate layer provided between the first electrode and the second electrode; and an encapsulation layer provided to cover the organic light-emitting device, wherein the encapsulation layer includes a first organic layer and a first inorganic layer provided on the first organic layer and including carbon, and a carbon content of the first inorganic layer gradually decreases from an interface between the first organic layer and the first inorganic layer in a direction from the first organic layer to the first inorganic layer.

Abstract: A vertical LED with current blocking structure and its associated fabrication method involve an anisotropic conductive material and a conductive substrate with concave-convex structure. The anisotropic conductive material forms a bonding layer with vertical conduction and horizontal insulation between the concave-convex substrate and the light-emitting epitaxial layer, thereby forming a vertical LED with current blocking function.

Abstract: An organic light-emitting apparatus including: a substrate; an organic light-emitting device disposed on the substrate and including a first electrode, a second electrode, and an intermediate layer disposed between the first electrode and the second electrode; and an encapsulation layer provided to cover the organic light-emitting device. The encapsulation layer includes a first inorganic layer including a first fracture point, and a first fracture control layer provided on the first inorganic layer to seal the first fracture point.