Abstract: The present invention provides an integrated-type LED and method for manufacturing the same. This integrated-type LED comprises a base board which having a preplaced circuit and at least one LED chip. P electrode and N electrode of the LED chip are respectively connected, conducting and fixing on the base board; The manufacturing method is a) making and arranging circuit on the base board, b) installing at least one LED chip on the base board, aligned P electrode and N electrode of LED chip with the corresponding circuit on the base board, c) directly connecting P electrode and N electrode of LED chip, conducting and fixing on the base board. The present invention has the advantage of good dispersing heat effect, low cost, high lifetime and high luminescent efficiency.

Abstract: One embodiment of the invention provides an illumination system including a light-source supporting body and a power supporting body. The light-source supporting body has a first groove. At least a light-source module is received in the first groove. The power supporting body has second groove. At least a power module is received in the second groove. The light-source supporting body is detachably fixed on the power supporting body. Each light-source module includes a multichip package structure composed of a plurality of light-emitting chips, and each of the light-source modules and the power module are separated by the light-source supporting body and the power supporting body.

Abstract: Provided herein is a method of manufacturing an organic electroluminescence display device, including the steps of: forming a getter layer on a unit sealing substrate using a dry method; providing a device substrate including a device array formed thereon, the device array including a plurality of unit organic electroluminescence devices; attaching the device substrate to the unit sealing substrate such that the getter layer faces the device array, thus forming a module; and imparting fluidity to the getter layer such that the getter layer covers upper and lateral sides of the device array. The method is advantageous in that fluidity is imparted to the getter layer, so that the upper and lateral sides of the device array is covered by the getter layer, thereby greatly improving the moisture resistance of the organic electroluminescence device.

Abstract: A precursor structure for fabricating light sources, the light sources fabricated therefrom, and the method of fabricating the precursor structure are disclosed. A precursor substrate includes a flexible printed circuit board on which dies are bonded and a separation ridge. The flexible printed circuit board has a bottom heat-conducting layer, an insulating layer, and a circuit layer. The insulating layer and the circuit layer include a plurality of openings that expose the top surface of the heat-conducting layer. The separation ridge extends above the circuit layer and the dies and is configured to prevent contact with the dies and any structures constructed above the dies when the precursor substrate is in contact with a surface positioned over the die and in contact with the separation ridge. The structure is well suited for roll-to-roll processing equipment.

Abstract: An LED chip package structure with different LED spacing includes a substrate unit, a light-emitting unit, and a package colloid unit. The light-emitting unit has a plurality of LED chips electrically arranged on the substrate unit, and the LEDs are separated from each other by totally different spacing or partially different spacing. For example, the spacings between each two LED chips are from rarefaction to condensation, from condensation to rarefaction, from center rarefaction to outer condensation, from center condensation to outer rarefaction, alternate rarefaction and condensation, or alternate condensation and rarefaction. The package colloid unit covers the LED chips.

Abstract: A submount for a semiconductor light emitting device includes a semiconductor substrate having a cavity therein configured to receive the light emitting device. A first bond pad is positioned in the cavity to couple to a first node of a light emitting device received in the cavity. A second bond pad is positioned in the cavity to couple to a second node of a light emitting device positioned therein. Light emitting devices including a solid wavelength conversion member and methods for forming the same are also provided.

Abstract: A light emitting diode (LED) package is provided. The LED package includes: a package body including an LED; a bottom heat transfer metal layer formed on the bottom of the package body; and a metal plate bonded to the bottom heat transfer metal layer, wherein the bottom heat transfer metal layer is bonded to the metal plate through soldering or an adhesive such as Ag epoxy, and the metal plate includes only metal without a resin layer.

Abstract: A LED module and a packing method of the same include plural boards defined with a positive line and a negative line. The positive line connects to at least one positive joint, and the negative line connects to at least one negative joint. Some LEDs are respectively disposed on each board, and conducting ends of the LEDs are separately connected to the positive line and the negative line. A number of electronic elements are individually installed on each board, and conducting ends of the electronic elements are separately connected to the positive line and the negative line disposed on the board. A positive guiding line connects to the positive joint of each board, and a negative guiding line connects to the negative joint of each board. The LED module achieved in accordance with above-mentioned construction contributes to the flexibility.

Abstract: LEDs are mounted onto a flat, thermally conductive, substrate, which is folded to form a light recycling cavity. A planar substrate is first coated with a metal layer, which is patterned to electrically connect the LEDs and to form bonding pads for wirebonds to connect the LEDs to external circuitry. The LEDs are mounted on the substrate. The substrate is then scribed on the backside to form the folds. The LED dies are then attached onto the metal islands (pads) defined on the substrate and wirebonds are used to connect the top side of the LED to adjacent patterned metal islands (pads) on the substrate. The substrate is then folded into a light recycling cavity where the LEDs are facing the inside of the cavity.

Abstract: A light-emitting diode and a method for manufacturing the same are described. The light-emitting diode includes a bonding substrate, a first conductivity type electrode, a bonding layer, an epitaxial structure, a second conductivity type electrode, a growth substrate and an encapsulant layer. The first conductivity type electrode and the bonding layer are respectively disposed on two surfaces of the bonding substrate. The epitaxial structure includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A trench is set around the epitaxial structure and extends from the second conductivity type semiconductor layer to the first conductivity type semiconductor layer. The second conductivity type electrode is electrically connected to the second conductivity type semiconductor layer. The growth substrate is disposed on the epitaxial structure and includes a cavity exposing the epitaxial structure and the trench.

Abstract: To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head portion of a thin film deposition apparatus is scanned along a pixel row to thereby simultaneously apply a red light emitting layer application liquid, a green light emitting layer application liquid, and a blue light emitting layer application liquid in stripe shapes. Heat treatment is then performed to thereby form light emitting layers luminescing each of the colors red, green, and blue.

Abstract: A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended from the first surface and passing through the active layer so a plurality of light-emitting units is defined; and a plurality of second trenches extended from the second surface and passing through the active layer of each of the plurality of light-emitting units.

Abstract: Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.

Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

Abstract: According to one embodiment, a method of manufacturing an organic EL device is disclosed. The method can arrange an adhesive agent of an ultraviolet curable type between a first substrate on which a plurality of light emitting parts are formed in a predetermined direction and a second substrate arranged to face the first substrate separately so as to surround the light emitting parts. Each of the light emitting parts comprises a plurality of organic EL elements. The method can form a substrate pair by exposing the adhesive agent to ultraviolet rays to bond the first substrate and the second substrate to each other with the adhesive agent. The method can place the substrate pair on a first holding member capable of holding an entire surface of the first substrate or the second substrate.

Abstract: A light emitting diode chip includes a submount, a reflective layer on the submount, an insulating layer on the reflective layer opposite the submount, and a plurality of sub-LEDs on the insulating layer. Each of the sub-LEDs includes a first face adjacent to the submount and a transparent contact on the first face between the sub-LED and the insulating layer and electrical interconnects between adjacent ones of the sub-LEDs.

Abstract: A light emitting diode package comprises a substrate with a first surface and a second surface opposite to each other, a circuit on the substrate, a support on the substrate for reinforcing strength of the substrate, a plurality of light emitting diodes on the substrate and electrically connected to the circuit, and a cover layer on the plurality of light emitting diodes. A method for manufacturing a light-emitting diode package is further provided.

Abstract: An organic light-emitting diode display device includes a substrate, a display unit on the substrate, a touch unit facing the substrate, and a sealing portion surrounding the display unit. The sealing portion couples the substrate to the touch unit and includes glass frit. The touch unit includes an encapsulation substrate, a first conductive layer on the encapsulation substrate, an insulating layer on a portion of the first conductive layer and the encapsulation substrate, and a second conductive layer on the first conductive layer and the insulating layer. The insulating layer of the touch unit includes an organosilicon compound and has a thermal decomposition temperature of about 360° C. or more.

Abstract: Embodiments disclosed herein provide packaged LED devices in which the majority of the emitted light comes out the top of each LED chip with very little side emissions. Because light only comes out from the top, phosphor deposition and color temperature control can be significantly simplified. A package LED may include a housing positioned on a supporting submount, sized and dimensioned to accommodate a single LED chip or an array of LED chips. The LED chip(s) may be attached to the submount utilizing the Gold-to-Gold Interconnect (GGI) process or solder-based approaches. In some embodiments, phosphor may be deposited on top of the LED chip(s) or sandwiched between glass plates on top of the LED chip(s). The phosphor layer may be inside or on top of the housing and be secured to the housing utilizing an adhesive. The housing may be adhered to the submount utilizing a thermal epoxy.

Abstract: Disclosed is an image sensor. The image sensor includes a semiconductor substrate including a lower interconnection, a plurality of upper interconnection sections protruding upward from the semiconductor substrate, a first trench disposed between the upper interconnection sections such that the upper interconnection sections are spaced apart from each other, a bottom electrode disposed on an outer peripheral surfaces of the upper interconnection sections, a first conductive layer disposed on an outer peripheral surface of the bottom electrode, an intrinsic layer disposed on the semiconductor substrate including the first conductive layer and the first trench, and having a second trench on the first trench, a second conductive layer disposed on the intrinsic layer and having a third trench on the second trench, a light blocking part disposed in the third trench, and a top electrode disposed on the light blocking part and the second conductive layer.

Abstract: A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is grown on the substrate. A top surface of a semiconductor layer grown on the seed layer has a lateral extent greater than each of the plurality of seed layer regions.

Abstract: A light emitting device can have a layered structure and include a plurality of semiconductor nanocrystals. The layers of the device can be covalently bonded to each other. The device can include continuous chain of covalent bonds extending from the first electrode to the second electrode.

Abstract: A method for fabricating light emitting diode packages includes: providing a light emitting diode wafer which has a plurality of light emitting diode chips, each of the light emitting diode chips including a semiconductor unit that has p-type and n-type electrode regions, and two electrodes; forming a light-transmissive insulating layer on the light emitting diode chips; forming a reflective metal layer on a portion of the light-transmissive insulating layer; forming a layer of insulating material on the light-transmissive insulating layer and the reflective metal layer, and performing exposing and developing treatments to form the layer of insulating material into a plurality of protective insulating structures; forming a conductor-receiving insulating layer on the light-transmissive insulating layer and the protective insulating structures; and performing a cutting process to obtain a plurality of light emitting diode packages each having at least one of the light emitting diode chips.

Abstract: Provided is a mounting method making it possible to, when an object such as an element, or more particularly, a microscopic object is mounted on a substrate, achieve mounting readily and reliably with high positional precision by: forming an element holding layer 12, which is made of a material whose viscosity can be controlled, on a substrate 11; controlling the viscosity of a first part 12a of the element holding layer 12, which includes a mounting region for an element, into a viscosity making the element naturally movable, and controlling the viscosity of a second part 12b of the element holding layer 12 outside the first part 12a into a viscosity making the element naturally immovable; and after mounting one element 13 in the first part 12a, controlling the viscosity of the first part 12a into the viscosity making the element 13 naturally immovable.

Abstract: A method of manufacturing a light-emitting device includes, when sealing a light-emitting element on a mounting portion by a glass material softened by heating or when processing the glass material after the sealing, producing a concave portion partially on the glass material by partially contacting and pressing a die against an upper surface of the glass material such that a part of the upper surface being not in contact with the die is deformed and forms a curved surface.

Abstract: Disclosed is an electrophoretic display (EPD) device capable of implementing colors with high brightness. Each sub-pixel implement colors with driving color particles, white particles and black particles, and the EPD device has an enhanced contrast ratio due to black particles.

Abstract: A light emitting chip package module includes a substrate, a light emitting chip package structure, and a magnetic device. The substrate has a surface. The light emitting chip package structure is disposed on the surface of the substrate. The light emitting chip package structure includes a carrier, a light emitting chip, and a sealant. The light emitting chip is disposed on and electrically connected to the carrier. The sealant is disposed on the carrier and covers the light emitting chip. The magnetic device is disposed next to the light emitting chip package structure to apply a magnetic field to the light emitting chip.

Abstract: A method for manufacturing a light-emitting case includes forming a PLED (Polymer Light Emitting Diode) device, disposing the PLED device into a mold, and utilizing the mold to sheathe the PLED device with transparent plastic material in an injection-molding manner. Since the mold has a cavity corresponding to a predetermined shape, the formed transparent plastic material has a geometric appearance corresponding to the predetermined shape.

Abstract: This invention discloses a light emitting diode, a wafer level package method, a wafer level bonding method, and a circuit structure for a wafer level package. The light emitting diode includes a package carrier, a conducting material, at least one light emitting diode structure and a package material. The package carrier has at least one package unit and two through holes on the package carrier and corresponding to the package unit. The conducting material is disposed in the through holes and formed at the bottom of the package unit. The light emitting diode structure is formed on a substrate. The substrate having a light emitting diode structure is flipped over in the package unit, and the electrodes of the light emitting diode structure are bonded with the conducting material. After the substrate is removed, a package material is stuffed in the package unit or on the light emitting diode structure.

Abstract: A submount wafer, having mounted on it an array of LEDs with a phosphor layer, is positioned with respect to a mold having an array of indentions. A mixture of silicone and 10%-50%, by weight, TiO2, is dispensed between the wafer and the indentions, creating a molded substantially reflective material. The molded mixture forms a reflective wall covering the sidewalls of the LED. The reflective material is then cured, and the submount wafer is separated from the mold such that the reflective material covering the sidewalls contains light emitted from the LED. The submount wafer is then diced. A piece (e.g., a reflector, support bracket, etc.) may then be affixed to the submount so the LED protrudes through a center hole in the piece. The inner edge of the piece is easily formed so that it is located at any height above or below the top surface of the LED.

Abstract: Provided is a semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes a substrate, at least two light emitting cells located on the substrate and formed by stacking semiconductor material layers, a reflection layer and a transparent insulating layer sequentially stacked between the light emitting cells, and a transparent electrode covering the upper surface of the light emitting cells.

Abstract: A method for manufacturing an organic light emitting diode (OLED) display device, the method including: forming a mother substrate that includes a first glass substrate, a second glass substrate, organic light emitting diodes, and a sealant; etching the first and second glass substrates, to reduce the thicknesses thereof; forming a protective layer on the first glass substrate; and dividing the mother substrate into a plurality the displays, by cutting the first substrate through the protective layer.

Abstract: A method of fabricating a display panel from a thin substrate using a carrier substrate is disclosed. The method includes depositing a bonding agent on a first surface of the thin substrate; depositing a bonding agent on a second surface of the carrier substrate; bonding the thin substrate and the carrier substrate with the bonding agent deposited on the first surface and the second surface; performing thin film processing on a third surface of the thin substrate opposite the first surface; and separating the processed thin substrate from the carrier substrate. The thin substrate has a thickness less than a required thickness for sustaining thin film processing while a thickness of the bonded thin substrate and the carrier substrates is greater than or equal to that the required thickness.

Abstract: An organic electroluminescent display device includes: a first substrate having an active area displaying images and a non-active area surrounding the active area; a switching thin film transistor and a driving thin film transistor connected to the switching thin film transistor in the active area on the first substrate; an organic electroluminescent diode connected to the driving thin film transistor; a dummy metal pattern at a corner portion of the non-active area on the first substrate; a second substrate facing and spaced apart from the first substrate, the second substrate including a groove; and a seal pattern attaching the first and second substrates, wherein the dummy metal pattern overlaps a residue at a corner portion of the groove.

Abstract: An electronic component, includes a main body part inserted in an opening part formed in a board; and a pair of leads each of the leads having an end connected to the main body part and another end connected to a pad formed on the board; wherein the main body part is provided with the leads so that a functional surface of the main body part is positioned at a side connected to the pads of the board.

Abstract: A light emitting diode, LED, strip (301) for the illumination of channel signs is provided. The LED strip comprises a flexible circuit board, a plurality of LEDs mounted on the circuit board, and an electrical connector for connecting the LED strip to a power supply. The LED strip is at least in part encapsulated by a flexible resin such that the LED strip is foldable. The LED strip according to the present invention is advantageous in that its length can be adjusted by folding instead of cutting, thereby retaining the waterproof encapsulation of the LED strip. Further, a method for mounting a flexible LED strip (301) in a channel sign is provided. The method comprises the steps of attaching at least one clip (302) to an interior surface (303) of the channel sign, folding back an end (304) of the LED strip, and fixating the LED strip including the folded end using the clip.

Abstract: A light emitting diode (LED) packaging method includes the steps of preparing a circuit board (1), a transparent cap (3), and at least one LED material (2), placing the transparent cap (3) on the LED material (2) such that the circuit board (1) is aligned and superimposed, and forming an encapsulation layer (4) having a light pattern on the transparent cap (3) by an in-mold decoration injection molding process. In the in-mold decoration injection molding process, a filling port (511) of a mold (5) is aligned precisely above the LED material (2) to prevent a deviation of the LED material (2) and omit a surface mount technology (SMT) process, so as to integrally form an LED with a light pattern at the same time and achieve good water-resisting and static charge resisting effects.

Abstract: A MEMS-based display device is described, wherein an array of interferometric modulators are configured to reflect light through a transparent substrate. The transparent substrate is sealed to a backplate and the backplate may contain electronic circuitry fabricated on the backplane. The electronic circuitry is placed in electrical communication with the array of interferometric modulators and is configured to control the state of the array of interferometric modulators.

Abstract: There are provided a vertical geometry light emitting diode package aggregate useful for the production of a light emitting device having a vertical geometry light emitting diode as the light source, the light emitting device satisfying requirements in terms of current capacity flowed for light emission, dissipation of heat generated due to flow of a large current, resistance to thermal stress, strength of device and light emission efficiency, and a method for producing a light emitting device having a vertical geometry light emitting diode as the light source by using the package aggregate.

Abstract: A light source and method for making the same are disclosed. The light source includes a substrate and a light emitting structure that is deposited on the substrate. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first segment in series with the second segment. A first blocking diode between the light emitting structure and the substrate prevents current from flowing between the light emitting structure and the substrate when the light emitting structure is emitting light. The barrier extends through the light emitting structure into the first blocking diode.

Abstract: An optical semiconductor device includes a light emitting element having a first surface and a second surface, the first surface having a first electrode provided thereon, the second surface being located on the opposite side from the first surface and having a second electrode provided thereon; a first conductive member connected to the first surface; a second conductive member connected to the second surface; a first external electrode connected to the first conductive member; a second external electrode connected to the second conductive member; and an enclosure sealing the light emitting element, the first conductive member, and the second conductive member between the first external electrode and the second external electrode, and being configured to transmit light emitted from the light emitting element.

Abstract: Packaged LEDs with phosphor films, and associated systems and methods are disclosed. A system in accordance with a particular embodiment of the disclosure includes a support member having a support member bond site, an LED carried by the support member and having an LED bond site, and a wire bond electrically connected between the support member bond site and the LED bond site. The system can further include a phosphor film carried by the LED and the support member, the phosphor film being positioned to receive light from the LED at a first wavelength and emit light at a second wavelength different than the first. The phosphor film can be positioned in direct contact with the wire bond at the LED bond site.

Abstract: A method of forming a semiconductor light emitting element. The method can include forming a seed layer on a semiconductor layer assembly including at least one nitride semiconductor layer. An insulating mask can be formed on the seed layer. The insulating mask can include a plurality of element areas separated by cross spaces. Each element area of the plurality of element areas can be connected to at least one of the other element areas of the plurality of element areas. The seed layer can be plated such that a plating substrate is formed in each of the plurality of element areas.

Abstract: A formed, multi-dimensional light-emitting diode (LED) array is disclosed. A substrate is bent into a trapezoidal shape having different sections facing in different directions. Each section has one or more mounted LEDs that emit light with an azimuthally non-circular, monotonic angular distribution. A converter material is placed in an optical path of the LEDs to alter characteristics of the light from the LEDs.

Abstract: An optoelectronic semiconductor component is provided, having a connection carrier (2), an optoelectronic semiconductor chip (1), which is arranged on a mounting face (22) of the connection carrier (2), and a radiation-transmissive body (3), which surrounds the semiconductor chip (1), wherein the radiation-transmissive body (3) contains a silicone, the radiation-transmissive body (3) comprises at least one side face (31) which extends at least in places at an angle ? of <90° to the mounting face (22) and the side face (3) is produced by a singulation process.

Abstract: The present invention is to provide a method of forming a vertical structure light emitting diode with a heat exhaustion structure. The method includes steps of: a) providing a sapphire substrate; b) depositing a number of protrusions on the sapphire substrate, each of which has a height of p; c) forming a buffer layer having a number of recesses, each of which has a depth of q smaller than p so that when the protrusions are accommodated within the recesses of the buffer layer, a number of gaps are formed therebetween for heat exhaustion; d) growing a number of luminescent layers on the buffer layer, having a medium layer formed between the luminescent layers and the buffer layer; e) etching through the luminescent layers and the buffer layer to form a duct for heat exhaustion; f) removing the sapphire substrate and the protrusions by excimer laser lift-off (LLO); g) roughening the medium layer; and h) depositing electrodes on the roughened medium layer.

Abstract: In summary, the present invention relates to a device, a system, a method and a computer program enabling a thermally improved packaging of a plurality of light emitting diodes (110, 112, 114) and at least one integrated circuit (116). A most temperature sensitive light emitting diode (110) of the plurality of light emitting diodes is located between less temperature sensitive light emitting diodes (112, 114) of the plurality of light emitting diodes and the at least one integrated circuit. Further, various additional measures such as e.g. varying at least one mounting area (102, 104, 106) of at least one light emitting diode, providing at least one thermal shielding (118), etc. can be taken in order to thermally optimize the packaging.

Abstract: Example embodiments of the present invention relate to a light emitting device having a connection structure and a method of manufacturing the light emitting device. The method of manufacturing may include forming a light emitting region and electrode layers on a substrate in which a plurality of cell regions and a bridge for partially connecting the cell regions are disposed, thereby providing a light emitting device that controls stress with relative ease and integrates electrical connections between the cell regions.

Abstract: A lighting module may include a lighting band with a band-shaped flexible substrate, wherein at least one semiconductor light source is applied to a top side of the substrate, wherein the lighting module is faced with a protective layer such that at least one emission area of the at least one semiconductor light source is exposed thereby.

Abstract: A manufacturing method of an organic light emitting diode (OLED) display device includes forming a thin film transistor and an organic light emitting diode in a display area of a first substrate, forming a thin film encapsulation layer that has a layering structure of an organic film and an inorganic film on one substrate of the first substrate and a second substrate, forming a sealing member by coating a sealing material that includes an inorganic sealant and an organic compound on an edge of the second substrate, removing the organic compound of the sealing member by baking the sealing member, layering the second substrate on the first substrate so that the sealing member contacts the first substrate, dissolving the sealing member by using a laser beam, solidifying the sealing member, attaching the sealing member to the first substrate, and removing the second substrate from the sealing member.