Abstract: A method of making a semiconductor device includes manufacturing a first transistor over a first side of a substrate. The method further includes depositing a spacer material against a sidewall of the first transistor. The method further includes recessing the spacer material to expose a first portion of the sidewall of the first transistor. The method further includes manufacturing a first electrical connection to the transistor, a first portion of the electrical connection contacts a surface of the first transistor farthest from the substrate, and a second portion of the electrical connect contacts the first portion of the sidewall of the first transistor. The method further includes manufacturing a self-aligned interconnect structure (SIS) extending along the spacer material, wherein the spacer material separates a portion of the SIS from the first transistor, and the first electrical connection directly contacts the SIS.

Abstract: Contact over active gate (COAG) structures with etch stop layers, and methods of fabricating contact over active gate (COAG) structures using etch stop layers, are described. In an example, an integrated circuit structure includes a plurality of gate structures above substrate, each of the gate structures including a gate insulating layer thereon. A plurality of conductive trench contact structures is alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon. A first dielectric etch stop layer is directly on and continuous over the trench insulating layers and the gate insulating layers. A second dielectric etch stop layer is directly on and continuous over the first dielectric etch stop layer, the second dielectric etch stop layer distinct from the first dielectric etch stop layer. An interlayer dielectric material is on the second dielectric etch stop layer.

Abstract: Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented. A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the SOI substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed. Then, an impurity is implanted into an upper surface of the semiconductor substrate with using the gate electrode and the epitaxial layer as a mask, so that a halo region is formed in only a region of the upper surface of the semiconductor substrate which is right below a vicinity of both ends of the gate electrode.

Abstract: Device structures for a high-voltage semiconductor device and methods of forming such device structures. The structure comprises a semiconductor substrate and a layer stack including a first dielectric layer and a second dielectric layer. The first dielectric layer is positioned between the second dielectric layer and the semiconductor substrate. The structure further comprises a field-effect transistor including a first source/drain region in the semiconductor substrate, a second source/drain region in the semiconductor substrate, and a metal gate on the layer stack laterally between the first source/drain region and the second source/drain region. The second dielectric layer is positioned between the metal gate and the first dielectric layer. A contact extends through the layer stack to the first source/drain region.

Abstract: A semiconductor device includes a semiconductor fin. The semiconductor device includes a gate spacer over the semiconductor fin. A lower portion of the gate spacer surrounds a first region and an upper portion of the gate spacer surrounds a second region. The semiconductor device includes a gate dielectric within the first region. The semiconductor device includes a metal gate within the first region. The semiconductor device includes a dielectric protection layer, in contact with the gate dielectric layer, that includes a first portion within the second region and a second portion lining a top surface of the metal gate.

Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC). The IC includes a pair of source/drain regions in a substrate. A gate dielectric layer is on the substrate and laterally between the source/drain regions. A gate electrode overlies the gate dielectric layer. A sidewall liner is disposed along sidewalls of the gate electrode and along an upper surface of the substrate. A sidewall spacer overlies the substrate and is on sidewalls and an upper surface of the sidewall liner. The sidewall spacer has a pair of segments respectively on opposite sides of the gate electrode. The sidewall spacer consists essentially of silicon oxycarbonitride. A dielectric constant of the sidewall spacer is greater than that of the sidewall liner.

Abstract: A semiconductor device and method of making same. The semiconductor device includes: a first conductivity type transistor and a second conductivity type transistor, wherein each of the first conductivity type transistor and the second conductivity type includes a gate insulating film formed on a base, a metal gate electrode formed on the gate insulating film, and side wall spacers formed at side walls of the metal gate electrode, wherein the gate insulating film is made of a high dielectric constant material, and wherein offset spacers are formed between the side walls of the metal gate electrode and the inner walls of the side wall spacers in any one of the first conductivity type transistor and the second conductivity type transistor, or offset spacers having different thicknesses are formed in the first conductivity type transistor and the second conductivity type transistor.

Abstract: A method of manufacturing a MOS transistor includes forming a conductive first gate and forming insulating spacers along opposite sides of the gate, wherein the spacers are formed before the gate.

Abstract: A method of manufacturing an integrated circuit device including a self-aligned air spacer including the operations of forming a dummy gate, forming a sidewall on the dummy gate, forming a dummy layer on the sidewall, constructing a gate structure within an opening defined by the sidewall, removing at least a portion of the first dummy layer to form a first recess between the sidewall layer and the dummy gate, and capping the first recess to form a first air spacer.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The manufacturing method includes: forming a stacked structure on the substrate, the stacked structure at least including a first material layer, a second material layer and a third material layer from bottom to top; patterning the stacked structure to obtain a first pattern structure; forming a spacer structure on a side wall of the first pattern structure, a top of the spacer structure being not lower than a top of the first material layer; and removing the third material layer, wherein during removing the third material layer, an etching selectivity of the third material layer to the second material layer is greater than 1.

Abstract: A method of forming a semiconductor device structure includes forming a resist structure over a substrate, the resist structure includes an anti-reflective coating (ARC) layer and a photoresist layer over the ARC layer. The method further includes patterning the photoresist layer to form a trench therein. The method further includes performing a hydrogen plasma treatment to the patterned photoresist layer, wherein the hydrogen plasma treatment is configured to smooth sidewalls of the trench, and the hydrogen plasma treatment is performed at a temperature ranging from about 200° C. to about 600° C. The method further includes patterning the ARC layer using the patterned photoresist layer as a etch mask.

Abstract: A method is provided for producing a plurality of transistors on a substrate comprising at least two adjacent active areas separated by at least one electrically-isolating area, each transistor of the plurality of transistors including a gate having a silicided portion, and first and second spacers on either side of the gate, the first spacers being located on sides of the gate and the second spacers being located on sides of the first spacers. The method includes forming the gates of the transistors, forming the first spacers, forming the second spacers, siliciding the gates so as to form the silicided portions of the gates, and removing the second spacers. The removal of the second spacers takes place during the silicidation of the gates and before the silicided portions are fully formed.

Abstract: A semiconductor wafer includes a first surface and an implantation area adjacent to the first surface and a certain distance away from the first surface, the implantation area including implanted particles and defects. A defect concentration in the implantation area deviates by less than 5% from a maximum defect concentration in the implantation area.

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a first gate structure over a substrate and laterally surrounded by a first sidewall spacer. The first gate structure protrudes outward from a top of the first sidewall spacer. A second gate structure is over the substrate and is laterally surrounded by a second sidewall spacer. The first gate structure has a first height that is larger than a second height of the second gate structure. The first sidewall spacer has a first cross-sectional profile that is a different shape and a different size than a second cross-sectional profile of the second sidewall spacer.

Abstract: A method includes forming a first transistor including forming a first gate stack, epitaxially growing a first source/drain region on a side of the first gate stack, and performing a first implantation to implant the first source/drain region. The method further includes forming a second transistor including forming a second gate stack, forming a second gate spacer on a sidewall of the second gate stack, epitaxially growing a second source/drain region on a side of the second gate stack, and performing a second implantation to implant the second source/drain region. An inter-layer dielectric is formed to cover the first source/drain region and the second source/drain region. The first implantation is performed before the inter-layer dielectric is formed, and the second implantation is performed after the inter-layer dielectric is formed.

Abstract: A semiconductor device includes a substrate, a first polysilicon structure over a first portion of the substrate, and a first spacer on a sidewall of the first polysilicon structure. The first spacer has a concave corner region between an upper portion and a lower portion. The semiconductor device includes a second polysilicon structure over a second portion of the substrate. The semiconductor device includes a second spacer on a sidewall of the second polysilicon structure. The semiconductor device further includes a protective layer covering an entirety of the first spacer and the first polysilicon structure, wherein the protective layer has a first thickness over the concave corner region and a second thickness over the first polysilicon structure, a difference between the first thickness and the second thickness is at most 10% of the second thickness, and the protective layer exposes a top-most portion of a sidewall of the second spacer.

Abstract: A transistor device and method of making the same are disclosed. The transistor device includes one or more air gaps in one or more sidewall spacers. The one or more air gaps may be located adjacent the gate and/or above the source or drain regions of the device. Various embodiments may include different combinations of air gaps formed in one or both sidewall spacers. Various embodiments may include air gaps formed in one or both sidewall spacers adjacent to the gate and/or above the source or drain regions of the device. The formation of the air gaps may reduce unwanted parasitic and/or fringing capacitance.

Abstract: A method for protecting a gate spacer when forming a FinFET structure, the method comprising: providing a fin with at least one dummy gate crossing the fin wherein a gate hardmask is present on top of the dummy gate; providing a gate spacer such that it is covering the dummy gate and the gate hardmask; recessing the gate spacer such that at least a part of the gate hardmask is exposed; selectively growing, by means of area selective deposition, extra capping material over the exposed part of the gate hardmask.

Abstract: A semiconductor device structure is provided. The structure includes a semiconductor substrate and a gate stack over the semiconductor substrate. The structure also includes a sealing element extending along a sidewall of the gate stack. The sealing element has a first atomic layer and a second atomic layer, and the first atomic layer and the second atomic layer have different atomic concentrations of carbon. The structure further includes a spacer element over the sealing element.

Abstract: The present application discloses a method for fabricating a semiconductor device with a flat surface. The method for fabricating a semiconductor device including providing a substrate, forming a gate structure on the substrate, and forming a plurality of word lines having top surfaces at a same vertical level as a top surface of the gate structure.

Abstract: A semiconductor device and method of making same. The semiconductor device includes: a first conductivity type transistor and a second conductivity type transistor, wherein each of the first conductivity type transistor and the second conductivity type includes a gate insulating film formed on a base, a metal gate electrode formed on the gate insulating film, and side wall spacers formed at side walls of the metal gate electrode, wherein the gate insulating film is made of a high dielectric constant material, and wherein offset spacers are formed between the side walls of the metal gate electrode and the inner walls of the side wall spacers in any one of the first conductivity type transistor and the second conductivity type transistor, or offset spacers having different thicknesses are formed in the first conductivity type transistor and the second conductivity type transistor.

Abstract: Transistor structures and methods of forming transistor structures are provided. The transistor structures include alternating layers of a first epitaxial material and a second epitaxial material. In some embodiments, one of the first epitaxial material and the second epitaxial material may be removed for one of an n-type or p-type transistor. A bottommost layer of the first epitaxial material and the second epitaxial material maybe be removed, and sidewalls of one of the first epitaxial material and the second epitaxial material may be indented or recessed.

Abstract: A power converter configured to generate a high-frequency power signal comprises at least one amplifier stage having first and second amplifier paths each having an amplifier, the first amplifier path outputting a first amplifier path output signal and the second amplifier path outputting a second amplifier path output signal that, has a phase shift relative to the first amplifier path output signal greater than 0° and less than 180°. The first and second amplifier paths are connected to a phase-shifting coupler that is configured to couple the first and second amplifier path output signals to form the high-frequency power signal. At least one amplifier of the first and second amplifier paths comprises a SiC MOSFET.

Abstract: A semiconductor structure includes a substrate; and a fin structure disposed on the substrate. The fin structure includes a channel region, a source region, and a drain region. The channel region is located between the source region and the drain region. The channel region includes a first nanowire and a second nanowire above the first nanowire. The first nanowire contains first threshold-voltage adjustment ions, and the second nanowire contains second threshold-voltage adjustment ions. A first opening is formed between the first nanowire and the substrate, and between the source region and the drain region, and a second opening is formed between the first nanowire and the second nanowire, and between the source region and the drain region. The first threshold-voltage adjustment ions are different from the second threshold-voltage adjustment ions in type, concentration, or a combination thereof.

Abstract: A semiconductor device includes a substrate and a gate structure over the substrate. The semiconductor device includes a source in the substrate on a first side of the gate structure. The semiconductor device further includes a drain in the substrate on a second side of the gate structure. The semiconductor device further includes a first well having a first dopant type, wherein the first well contacts at least two surfaces of the source. The semiconductor device further includes a second well having the first dopant type, wherein the second well contacts at least two surfaces of the drain. The semiconductor device further includes a deep well below the first well and below the second well, wherein the second well extends between the first well and the deep well. In some embodiments, the deep well has a second dopant type, and the second dopant type is opposite the first dopant type.

Abstract: Fin-like field effect transistors (FinFETs) and methods of fabrication thereof are disclosed herein. The FinFETs disclosed herein have gate air spacers integrated into their gate structures. An exemplary transistor includes a fin and a gate structure disposed over the fin between a first epitaxial source/drain feature and a second epitaxial source/drain feature. The gate structure includes a gate electrode, a gate dielectric, and gate air spacers disposed between the gate dielectric and sidewalls of the gate electrode.

Abstract: A semiconductor device includes a semiconductor substrate, a memory gate, and a data storage element. The semiconductor substrate includes a memory well which has two source/drain regions and a channel region between the source/drain regions. The memory gate is disposed above the channel region. The data storage element includes a ferroelectric material, and is disposed around the memory gate to separate the memory gate from the channel region.

Abstract: A semiconductor device includes a semiconductor fin. The semiconductor device includes a metal gate disposed over the semiconductor fin. The semiconductor device includes a gate dielectric layer disposed between the semiconductor fin and the metal gate. The semiconductor device includes first spacers sandwiching the metal gate. The first spacers have a first top surface and the gate dielectric layer has a second top surface, and the first top surface and a first portion of the second top surface are coplanar with each other. The semiconductor device includes second spacers further sandwiching the first spacers. The second spacers have a third top surface above the first top surface and the second top surface. The semiconductor device includes a gate electrode disposed over the metal gate.

Abstract: A semiconductor device includes a substrate having a first region and a second region. A device isolation layer is disposed in the substrate between the first region and the second region. The device isolation layer includes a buried dielectric layer in a trench that is recessed from a top surface of the substrate. A first liner layer is between the trench and the buried dielectric layer. A semiconductor layer is disposed on a top surface of the substrate of the first region. A first gate pattern is disposed on the semiconductor layer. A protrusion is disposed on a top surface of the device isolation layer.

Abstract: A first FinFET device includes first fin structures that extend in a first direction in a top view. A second FinFET device includes second fin structures that extend in the first direction in the top view. The first FinFET device and the second FinFET device are different types of FinFET devices. A plurality of gate structures extend in a second direction in the top view. The second direction is different from the first direction. Each of the gate structures partially wraps around the first fin structures and the second fin structures. A dielectric structure is disposed between the first FinFET device and the second FinFET device. The dielectric structure cuts each of the gate structures into a first segment for the first FinFET device and a second segment for the second FinFET device. The dielectric structure is located closer to the first FinFET device than to the second FinFET device.

Abstract: A method including forming an opening in a junction region of a fin on and extending from a substrate; introducing a doped semiconductor material in the opening; and thermal processing the doped semiconductor material. A method including forming a gate electrode on a fin extending from a substrate; forming openings in the fin adjacent opposite sides of the gate electrode; introducing a doped semiconductor material in the openings; and thermally processing the doped semiconductor material sufficient to induce the diffusion of a dopant in the doped semiconductor material. An apparatus including a gate electrode transversing a fin extending from a substrate; and semiconductor material filled openings in junction regions of the fin adjacent opposite sides of the gate electrode, wherein the semiconductor material comprises a dopant.

Abstract: A semiconductor device structure includes a substrate, a first gate structure, a second gate structure, a first well region, and a first structure. The substrate has a first surface and a second surface opposite to the first surface. The first gate structure is disposed on the first surface. The second gate structure is disposed on the first surface. The first well region is in the substrate and between the first gate structure and the second gate structure. The first structure is disposed in the first well region. A shape of the first structure has an acute angle.

Abstract: An exemplary device includes a channel layer, a first epitaxial source/drain feature, and a second epitaxial source/drain feature disposed over a substrate. The channel layer is disposed between the first epitaxial source/drain feature and the second epitaxial source/drain feature. A metal gate is disposed between the first epitaxial source/drain feature and the second epitaxial source/drain feature. The metal gate is disposed over and physically contacts at least two sides of the channel layer. A source/drain contact is disposed over the first epitaxial source/drain feature. A doped crystalline semiconductor layer, such as a gallium-doped crystalline germanium layer, is disposed between the first epitaxial source/drain feature and the source/drain contact. The doped crystalline semiconductor layer is disposed over and physically contacts at least two sides of the first epitaxial source/drain feature.

Abstract: An apparatus is provided which comprises: a plurality of nanowire transistors stacked vertically, wherein each nanowire transistor of the plurality of nanowire transistors comprises a corresponding nanowire of a plurality of nanowires; and a gate stack, wherein the gate stack fully encircles at least a section of each nanowire of the plurality of nanowires.

Abstract: An integrated circuit includes a high-voltage MOS (HV) transistor and a capacitor supported by a semiconductor substrate. A gate stack of the HV transistor includes a first insulating layer over the semiconductor layer and a gate electrode formed from a first polysilicon. The capacitor includes a first electrode made of the first polysilicon and a second electrode made of a second polysilicon and at least partly resting over the first electrode. A first polysilicon layer deposited over the semiconductor substrate is patterned to form the first polysilicon of the gate electrode and first electrode, respectively. A second polysilicon layer deposited over the semiconductor substrate is patterned to form the second polysilicon of the second electrode. Silicon oxide spacers laterally border the second electrode and the gate stack of the HV transistor. Silicon nitride spacers border the silicon oxide spacers.

Abstract: A semiconductor device includes a channel, a first source/drain structure on a first side surface of the channel, a second source/drain structure on a second side surface of the channel, a gate structure surrounding the channel, an inner spacer layer on a side surface of the gate structure, and an outer spacer layer on an outer surface of the inner spacer layer. The first source/drain structure includes a first source/drain layer on the channel and a second source/drain layer on the first source/drain layer, and on a plane of the semiconductor device that passes through the channel, at least one of a first boundary line of the first source/drain layer in contact with the second source/drain layer and a second boundary line of the first source/drain layer in contact with the channel may be convex, extending toward the channel.

Abstract: Techniques are disclosed for forming transistor devices having reduced parasitic contact resistance relative to conventional devices. The techniques can be implemented, for example, using a standard contact stack such as a series of metals on, for example, silicon or silicon germanium (SiGe) source/drain regions. In accordance with one example such embodiment, an intermediate boron doped germanium layer is provided between the source/drain and contact metals to significantly reduce contact resistance. Numerous transistor configurations and suitable fabrication processes will be apparent in light of this disclosure, including both planar and non-planar transistor structures (e.g., FinFETs), as well as strained and unstrained channel structures. Graded buffering can be used to reduce misfit dislocation. The techniques are particularly well-suited for implementing p-type devices, but can be used for n-type devices if so desired.

Abstract: A cellulose-silicon oxide composite superhydrophobic material and a preparation method thereof are disclosed. In the method, cellulose substrates with different surface topographies are pretreated by a low-temperature plasma, and then a first silicon oxide layer is deposited on the cellulose substrate by a low-temperature plasma-enhanced chemical vapor deposition method, then modified by a low-temperature plasma, and finally a second silicon oxide layer is deposited thereon, thereby preparing a micro-nano structured superhydrophobic surface on the cellulose substrate, to obtain a cellulose-silicon oxide composite superhydrophobic material, which is an environmentally friendly bio-based hydrophobic material.

Abstract: An etching method includes: forming a second film on a workpiece target including a processing target film, a layer including a plurality of convex portions formed on the processing target film, and a first film that covers the plurality of convex portions and the processing target film exposed between the plurality of convex portions; etching the second film in a state where the second film remains on a portion of the first film that covers a side surface of each of the plurality of convex portions; and etching the first film in a state where the second film remains on the portion of the first film that covers the side surface of each of the plurality of convex portions, thereby exposing a top portion of each of the plurality of convex portions and the processing target film between the plurality of convex portions.

Abstract: In a method of manufacturing an MRAM device, a memory unit including a lower electrode, an MTJ structure and an upper electrode sequentially stacked is formed on a substrate. A protective layer structure including a capping layer, a sacrificial layer and an etch stop layer sequentially stacked is formed on the substrate to cover the memory unit. An insulating interlayer is formed on the protective layer structure. The insulating interlayer is formed to form an opening exposing the protective layer structure. The exposed protective layer structure is partially removed to expose the upper electrode. A wiring is formed on the exposed upper electrode to fill the opening.

Abstract: Semiconductor devices and methods of forming the same are provided. An example method includes providing a workpiece including a first dummy gate stack and a second dummy gate stack in a first area of the workpiece, a third dummy gate stack and a fourth dummy gate stack in a second area of the workpiece, a hard mask layer over each of the first dummy gate stack, the second dummy gate stack, the third dummy gate stack, and the fourth dummy gate stack. The method further includes depositing a photoresist (PR) layer over the workpiece to form a first PR layer portion over the first area and a second PR layer portion over the second area; and selectively forming a first opening through the second PR layer portion over the third dummy gate stack and a second opening through the second PR layer portion over the fourth dummy gate stack.

Abstract: This disclosure relates to a dual power supply detection circuit including first and second input stage field effect transistors, an inverter stage, a feedback stage field effect transistor, and first and second compensation circuits. The inverter stage includes a complimentary pair of transistors, and the complementary pair of transistors includes an NMOS transistor and a PMOS transistor configured and arranged so that gate lengths of the PMOS and NMOS transistors are different. The disclosure also relates to an integrated circuit including a dual power supply detection circuit.

Abstract: A programming method for a memory device is disclosed. The programming method comprises moving a plurality of first charge carriers at a shallow energy level to a channel in a substrate layer before a fine programming operation for a first word line, wherein the plurality of first charge carriers at the shallow energy level correspond to a memory cell to be programmed.

Abstract: Embodiments disclosed herein relate generally to methods for forming recesses in epitaxial source/drain regions for forming conductive features. In some embodiments, the recesses are formed in a two-step etching process including an anisotropic etch to form a vertical opening and an isotropic etch to expand an end portion of the vertical opening laterally and vertically. The recesses can have increased contact area between the source/drain region and the conductive feature, and can enable reduced resistance therebetween.

Abstract: A semiconductor device includes a substrate, a gate oxide layer formed on the substrate, a gate formed on the gate oxide layer, and a spacer formed adjacent the gate and over the substrate. The spacer includes a void filled with air to prevent leakage of charge to and from the gate, thereby reducing data loss and providing better memory retention. The reduction in charge leakage results from reduced parasitic capacitances, fringing capacitances, and overlap capacitances due to the low dielectric constant of air relative to other spacer materials. The spacer can include multiple layers such as oxide and nitride layers. In some embodiments, the semiconductor device is a multiple-time programmable (MTP) memory device.

Abstract: Contact over active gate (COAG) structures with etch stop layers, and methods of fabricating contact over active gate (COAG) structures using etch stop layers, are described. In an example, an integrated circuit structure includes a plurality of gate structures above substrate, each of the gate structures including a gate insulating layer thereon. A plurality of conductive trench contact structures is alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon. A first dielectric etch stop layer is directly on and continuous over the trench insulating layers and the gate insulating layers. A second dielectric etch stop layer is directly on and continuous over the first dielectric etch stop layer, the second dielectric etch stop layer distinct from the first dielectric etch stop layer. An interlayer dielectric material is on the second dielectric etch stop layer.

Abstract: A method for forming a semiconductor structure includes: forming a first gate structure in a predetermined low-potential region of a substrate and a second gate structure in a predetermined high-potential region of the substrate; sequentially forming a first dielectric layer and a second dielectric layer covering the first gate structure and the second gate structure; forming a portion of a third dielectric layer along sidewalls of the second gate structure and on the second dielectric layer; and etching the first dielectric layer and the second dielectric layer with the portion of the third dielectric layer as an etching hard mask to form a first composite spacer covering sidewalls of the first gate structure, and a second composite spacer covering the sidewalls of the second gate structure, wherein a width of the first composite spacer is less than a width of the second composite spacer.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate; an isolation layer in a first trench, defining an active region of the substrate; a gate structure in a second trench intersecting the active region; and first and second impurity regions spaced apart from each other by the gate structure. The gate structure includes a gate dielectric layer in the second trench; a first metal layer on the gate dielectric layer; and a gate capping layer on the first metal layer. The gate dielectric layer includes D+ and ND2+ in an interface region, adjacent the first metal layer, and D is deuterium, N is nitrogen, and D+ is positively-charged deuterium.

Abstract: A method includes forming a gate trench over a semiconductor fin. The gate trench includes an upper portion surrounded by first gate spacers and a lower portion surrounded by second gate spacers and the first gate spacers. The method includes forming a metal gate in the lower portion of the gate trench. The metal gate is disposed over a first portion of a gate dielectric layer. The method includes depositing a metal material in the gate trench to form a gate electrode overlaying the metal gate in the lower portion of the gate trench, while keeping sidewalls of the first gate spacers and upper surfaces of the second gate spacer overlaid by a second portion of the gate dielectric layer. The method includes removing the second portion of the gate dielectric layer, while remaining the gate electrode substantially intact.