Abstract: Disclosed are a pixel unit, an array substrate and a manufacturing method therefor, a display panel and a display device. At least two step portions adjacent to each other in an upward direction are provided at at least one of a first side of a drain electrode close to a display region and a second side of the drain electrode away from the display region, such that a pixel electrode is lapped onto the drain electrode gently.

Abstract: A polysilicon layer is formed over a substrate. The polysilicon layer is etched to form a dummy gate electrode having a top portion with a first lateral dimension and a bottom portion with a second lateral dimension. The first lateral dimension is greater than, or equal to, the second lateral dimension. The dummy gate electrode is replaced with a metal gate electrode.

Abstract: A semiconductor device according to an embodiment includes a first electrode; a second electrode; a silicon carbide layer disposed between the first electrode and the second electrode; an n-type silicon carbide region disposed in the silicon carbide layer and having a first nitrogen concentration; a first p-type silicon carbide region disposed in the silicon carbide layer between the n-type silicon carbide region and the first electrode and having a second nitrogen concentration higher than the first nitrogen concentration; and a second p-type silicon carbide region disposed in the silicon carbide layer between the first p-type silicon carbide region and the first electrode, having a third nitrogen concentration higher than the second nitrogen concentration, and having a p-type impurity concentration higher than that of the first p-type silicon carbide region.

Abstract: A CMOS device includes a p-type field effect transistor containing p-doped active regions, an n-type field effect transistor containing n-doped active regions, a silicon oxide layer overlying the n-type field effect transistor and not overlying the p-type field effect transistor, boron-doped epitaxial pillar structures contacting a top surface of, and epitaxially aligned to, a respective one of the p-doped active regions, first active region contact via structures contacting a top surface of a respective one of the boron-doped epitaxial pillar structures, and second active region contact via structures contacting a top surface of a respective one of the n-doped active regions.

Abstract: A method for fabricating a semiconductor device includes forming a pellicle including an amorphous carbon layer, attaching the pellicle onto a reticle, and forming a photoresist pattern by utilizing EUV light transmitted through the pellicle and reflected by the reticle. The forming the pellicle includes forming a first dielectric layer on a first side of the substrate, forming the amorphous carbon layer on the first dielectric layer, forming a second dielectric layer on a second side of the substrate opposite to the first side of the substrate, etching the second dielectric layer overlapping the first region of the substrate to form a mask pattern, and forming a support including the second region of the substrate and the remaining part of the first dielectric layer. The forming the support includes etching the first region of the substrate and the first dielectric layer on the first region.

Abstract: A semiconductor device is provided that includes a first plurality of fin structures having a first width in a first region of a substrate, and a second plurality of fin structures having a second width in a second region of the substrate, the second width being less than the first width. A first gate structure is formed on the first plurality of fin structures including a first high-k gate dielectric that is in direct contact with a channel region of the first plurality of fin structures and a first gate conductor. A second gate structure is formed on the second plurality of fin structures including a high voltage gate dielectric that is in direct contact with a channel region of the second plurality of fin structures, a second high-k gate dielectric and a second gate conductor.

Abstract: By decoupling the formation of a metal silicide in the gate electrode structure and the raised drain and source regions, superior flexibility in designing transistor elements and managing overall process flow may be achieved. To this end, the metal silicide in the gate electrode structures may be formed prior to actually patterning the gate electrode structures, while, also during this process sequence, a mask material may be applied for reliably covering any device regions in which a silicidation is not required. Consequently, superior gate conductivity may be accomplished, without increasing the risk of silicide penetration into the channel region of sophisticated fully depleted SOI transistors.

Abstract: The invention relates to a method for forming a field effect transistor. The method comprises providing a substrate with a channel layer, forming a gate stack structure on the channel layer, forming first sidewall spacers, forming a raised source and a raised drain on the channel layer and forming second sidewall spacers above the raised source and the raised drain. The method further includes depositing in a an insulating dielectric layer above the gate stack structure, the first sidewall spacers and the second sidewall spacers, planarization of the insulating dielectric layer and selectively etching the second sidewall spacers. Thereby contact cavities are created on the raised source and the raised drain. The method further includes forming a source contact and a drain contact by filling the contact cavities. The invention also concerns a corresponding computer program product.

Abstract: A vertical transistor has a first air-gap spacer between a gate and a bottom source/drain region, and a second air-gap spacer between the gate and the contact to the bottom source/drain region. A dielectric layer disposed between the gate and the contact to the top source/drain decreases parasitic capacitance and inhibits electrical shorting.

Abstract: In a manufacturing method of a semiconductor device according to an embodiment, an oxide film is formed on a semiconductor layer containing an impurity. A heat treatment is performed on the semiconductor layer to diffuse part of the impurity into the oxide film with hydrogen plasma treatment on the oxide film or with ultraviolet irradiation on the oxide film. After the heat treatment, the oxide film is removed.

Abstract: Embodiments of the present disclosure generally relate to methods for forming a doped silicon epitaxial layer on semiconductor devices at increased pressure and reduced temperature. In one embodiment, the method includes heating a substrate disposed within a processing chamber to a temperature of about 550 degrees Celsius to about 800 degrees Celsius, introducing into the processing chamber a silicon source comprising trichlorosilane (TCS), a phosphorus source, and a gas comprising a halogen, and depositing a silicon containing epitaxial layer comprising phosphorus on the substrate, the silicon containing epitaxial layer having a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, wherein the silicon containing epitaxial layer is deposited at a chamber pressure of about 150 Torr or greater.

Abstract: A semiconductor structure is provided that includes a semiconductor fin portion having an end wall and extending upward from a substrate. A gate structure straddles a portion of the semiconductor fin portion. A first set of gate spacers is located on opposing sidewall surfaces of the gate structure; and a second set of gate spacers is located on sidewalls of the first set of gate spacers. One gate spacer of the second set of gate spacers has a lower portion that directly contacts the end wall of the semiconductor fin portion.

Abstract: A semiconductor structure is provided that includes a semiconductor fin portion having an end wall and extending upward from a substrate. A gate structure straddles a portion of the semiconductor fin portion. A first set of gate spacers is located on opposing sidewall surfaces of the gate structure; and a second set of gate spacers is located on sidewalls of the first set of gate spacers. One gate spacer of the second set of gate spacers has a lower portion that directly contacts the end wall of the semiconductor fin portion.

Abstract: There is provided a method for manufacturing a transistor including a gate above an underlying layer of a semiconductor material and including at least one first flank and one second flank, a gate foot formed in the underlying layer, a peripheral portion of the underlying layer surrounding the gate foot, and spacers covering at least partially the first and second flanks so as to not cover the gate foot; the method including forming the underlying layer by partially removing the semiconductor material around the gate to form the gate foot and the peripheral portion; then forming a dielectric layer for forming spacers by a deposition to cover both the first and second flanks, the gate foot, and an upper surface of the peripheral portion; and then partially removing the dielectric layer so as to expose the upper surface and so as to not expose the first and second flanks.

Abstract: A method for fabricating semiconductor device is disclosed. First, a substrate is provided, a gate structure is formed on the substrate, a recess is formed adjacent to the gate structure, a buffer layer is formed in the recess, and an epitaxial layer is formed on the buffer layer. Preferably, the buffer layer includes a crescent moon shape.

Abstract: A method includes forming a metallic layer over a Metal-Oxide-Semiconductor (MOS) device, forming reverse memory posts over the metallic layer, and etching the metallic layer using the reverse memory posts as an etching mask. The remaining portions of the metallic layer include a gate contact plug and a source/drain contact plug. The reverse memory posts are then removed. After the gate contact plug and the source/drain contact plug are formed, an Inter-Level Dielectric (ILD) is formed to surround the gate contact plug and the source/drain contact plug.

Abstract: A semiconductor device includes a substrate including a first fin element, a second fin element, and a third fin element. A first source/drain epitaxial feature is disposed over the first and second fin elements. A first portion of the first source/drain epitaxial feature disposed on the first fin element and a second portion of the first source/drain epitaxial feature disposed on the second fin element merge at a merge point. A second source/drain epitaxial feature is disposed over the third fin element. A first sidewall of the second source/drain epitaxial feature interfaces a first third-fin spacer disposed along a first sidewall of the third fin element. A second sidewall of the second source/drain epitaxial feature interfaces a second third-fin spacer disposed along a second sidewall of the third fin element. The merge point has a first height less than a second height of the first third-fin spacer.

Abstract: A method of forming a SiOCN material layer and a method of fabricating a semiconductor device are provided, the method of forming a SiOCN material layer including supplying a silicon source onto a substrate; supplying a carbon source onto the substrate; supplying an oxygen source onto the substrate; and supplying a nitrogen source onto the substrate, wherein the silicon source includes a non-halogen silylamine, a silane compound, or a mixture thereof.

Abstract: Embodiments of the present disclosure generally relate to methods for forming a doped silicon epitaxial layer on semiconductor devices at increased pressure and reduced temperature. In one embodiment, the method includes heating a substrate disposed within a processing chamber to a temperature of about 550 degrees Celsius to about 800 degrees Celsius, introducing into the processing chamber a silicon source comprising trichlorosilane (TCS), a phosphorus source, and a gas comprising a halogen, and depositing a silicon containing epitaxial layer comprising phosphorus on the substrate, the silicon containing epitaxial layer having a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, wherein the silicon containing epitaxial layer is deposited at a chamber pressure of about 150 Torr or greater.

Abstract: A semiconductor device fabricated using a high-temperature ion implantation process is provided. The high-temperature ion implantation process includes providing a substrate having a plurality of fins. A mask material is deposited and patterned to expose a group of fins of the plurality of fins and a test structure. A first ion implantation may be performed, at a first temperature, through the group of fins and the test structure. Additionally, a second ion implantation may be performed, at a second temperature greater than the first temperature, through the group of fins and the test structure. An interstitial cluster is formed within the group of fins and within the test structure. Thereafter, an anneal process is performed, where the anneal process serves to remove the interstitial cluster from the group of fins and form at least one dislocation loop within the test structure.

Abstract: A method of fabricating a semiconductor device includes forming a first well region and a second well region in a semiconductor substrate, forming an isolation region defining a first fin active region and a second fin active region on the semiconductor substrate, forming a sacrificial gate layer on the semiconductor substrate having the first and second fin active regions and the isolation region, forming a hardmask line on the sacrificial gate layer, forming a gate cut mask having a gate cut opening on the hardmask line, and forming first and second hardmask patterns spaced apart from each other by etching the hardmask line using the gate cut mask as an etching mask. The gate cut opening overlaps a boundary between the first and second well regions formed between the first and second fin active regions, and has a line shape in a direction intersecting the hardmask line.

Abstract: Various methods and semiconductor structures for fabricating at least one FET device having textured gate-source-drain contacts of the FET device that reduce or eliminate variability in parasitic resistance between the contacts of the FET device. An example fabrication method includes epitaxially growing a source-drain contact region on an underlying semiconductor substrate of one of a pFET device or an nFET device. The method deposits a Nickel film layer directly on the epitaxially grown source-drain contact region. A first anneal forms a textured Nickel silicide film layer directly on the epitaxially grown source-drain contact region. A second metal film layer is deposited on the textured Nickel silicide film layer. A second anneal forms a textured second metal silicide film layer. The method can be repeated on the other one of the pFET device or the nFET device.

Abstract: The method for preventing epitaxial growth in a semiconductor device begins with cutting a set of long fins into a set of fins of a FinFET structure, the set of fins having respective cut faces of a set of cut faces located at respective fin ends of a set of fin ends. A photoresist layer is patterned over the set of fin ends of the set of fins of the FinFET structure. The photoresist pattern over the set of fin ends differs from the photoresist pattern over other areas of the FinFET structure as the photoresist pattern over the set of fin ends protects the first dielectric material at the set of fin ends. A set of dielectric blocks is formed at the set of fin ends, wherein each of the dielectric blocks covers at least one cut face. The set of dielectric blocks prevents epitaxial growth at the set of fin ends in a subsequent epitaxial growth step.

Abstract: A semiconductor device may include a strain relaxed buffer layer provided on a substrate to contain silicon germanium, a semiconductor pattern provided on the strain relaxed buffer layer to include a source region, a drain region, and a channel region connecting the source region with the drain region, and a gate electrode enclosing the channel region and extending between the substrate and the channel region. The source and drain regions may contain germanium at a concentration of 30 at % or higher.

Abstract: A method of fabricating Schottky barrier contacts for an integrated circuit (IC). A substrate including a silicon including surface is provided. A plurality of transistors are formed on the silicon including surface in at least one PMOS region and at least one NMOS region, where the plurality of transistors include at least one exposed p-type surface region and at least one exposed n-type surface region. Pre-silicide cleaning removes oxide from the exposed p-type surface regions and exposed n-type surface regions. A plurality of metals are deposited including Yb and Pt to form at least one metal layer on the substrate. The metal layer is heated to induce formation of an inhomogeneous silicide layer including both Ptsilicide and Ybsilicide on the exposed p-type and exposed n-type surface regions. Unreacted metal of the metal layer is stripped.

Abstract: A method for manufacturing an organic light emitting diode display includes forming a thin-film transistor on a substrate, forming a protection layer by using a deposition method on an entire surface of the substrate, and forming an organic light emitting element on the protection layer. Forming the protection layer includes forming a first protection layer, a surface thereof including a first wrinkle, and forming a second protection layer on the first protection layer, a surface thereof including a second wrinkle. A first modulus value of the first protection layer is less than a second modulus value of the second protection layer by at least 300 MPa.

Abstract: Techniques are disclosed for forming transistor devices having reduced parasitic contact resistance relative to conventional devices. The techniques can be implemented, for example, using a standard contact stack such as a series of metals on, for example, silicon or silicon germanium (SiGe) source/drain regions. In accordance with one example such embodiment, an intermediate boron doped germanium layer is provided between the source/drain and contact metals to significantly reduce contact resistance. Numerous transistor configurations and suitable fabrication processes will be apparent in light of this disclosure, including both planar and non-planar transistor structures (e.g., FinFETs), as well as strained and unstrained channel structures. Graded buffering can be used to reduce misfit dislocation. The techniques are particularly well-suited for implementing p-type devices, but can be used for n-type devices if so desired.

Abstract: A method is provided for fabricating transistors. The method includes providing a semiconductor substrate. The substrate has a gate film and a mask film formed on a top surface. The mask film contains implanted carbon ions. The method further includes forming a mask layer by etching the mask film and then forming a gate layer by etching through the gate film using the mask layer as a mask until the substrate is exposed. The method also includes forming a first sidewall containing implanted carbon ions on the side surface of the gate layer and the mask layer; forming a stress layer in the substrate on both sides of the gate layer and the first sidewall; and forming a source region on one side of the gate layer and the first sidewall and a drain region on the other side of the gate layer and the first side wall.

Abstract: A vertical transistor has a first air-gap spacer between the gate and the bottom source/drain, and a second air-gap spacer between the gate and the contact to the bottom source/drain. A dielectric layer disposed between the gate and the contact to the top source/drain decreases parasitic capacitance and inhibits electrical shorting.

Abstract: A 3D-IC includes a first tier device and a second tier device. The first tier device and the second tier device are vertically stacked together. The first tier device includes a first substrate and a first interconnect structure formed over the first substrate. The second tier device includes a second substrate, a doped region formed in the second substrate, a dummy gate formed over the substrate, and a second interconnect structure formed over the second substrate. The 3D-IC also includes an inter-tier via extends vertically through the second substrate. The inter-tier via has a first end and a second end opposite the first end. The first end of the inter-tier via is coupled to the first interconnect structure. The second end of the inter-tier via is coupled to one of: the doped region, the dummy gate, or the second interconnect structure.

Abstract: The present invention provides a low temperature polysilicon thin film transistor and a fabricating method thereof. According to the method, a laser annealing process is performed to a remained portion of a a-Si layer on a substrate to form a first lightly doped drain (LDD) terminal, a second LDD terminal, a first phosphor material structure and a second phosphor material structure. A gate metal layer is then formed on the remained portion of the a-Si layer. A source metal layer and a drain metal layer are formed on the first doped layer and the second doped layer located at opposite sides of the gate metal layer, respectively. The present invention use the high temperature of the laser annealing process to perform a heat diffusion of phosphor material to form the LDD terminal and the phosphor material structure, the times of photomasks are used is reduced, and the process is simplified.

Abstract: A borderless contact structure or partially borderless contact structure and methods of manufacture are disclosed. The method includes forming a gate structure and a space within the gate structure, defined by spacers. The method further includes blanket depositing a sealing material in the space, over the gate structure and on a semiconductor material. The method further includes removing the sealing material from over the gate structure and on the semiconductor material, leaving the sealing material within the space. The method further includes forming an interlevel dielectric material over the gate structure. The method further includes patterning the interlevel dielectric material to form an opening exposing the semiconductor material and a portion of the gate structure. The method further includes forming a contact in the opening formed in the interlevel dielectric material.

Abstract: A method for manufacturing a field effect transistor includes chelating a molecular mask to a replacement metal gate in a field effect transistor. The method may further include forming a patterned dielectric layer on a bulk dielectric material and a gate dielectric barrier in one or more deposition steps. The method may include removing the molecular mask and exposing part of the gate dielectric barrier before depositing a dielectric cap that touches the gate dielectric barrier and the replacement metal gate.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a gate stack over the semiconductor substrate. The semiconductor device structure also includes a sealing structure over a sidewall of the gate stack, and a width ratio of the sealing structure to the gate stack is in a range from about 0.05 to about 0.7. The semiconductor device structure further includes an etch stop layer over the semiconductor substrate, the gate stack, and the sealing structure. The etch stop layer is in contact with the sealing structure.

Abstract: Methods of forming a semiconductor device are provided. A method of forming a semiconductor device includes forming a metal layer on source/drain regions of respective semiconductor structures, after replacing a dummy gate structure of the semiconductor device with a metal gate structure. The method includes forming a contact structure that overlaps the metal layer on one or more, but not all, of the semiconductor structures. Moreover, an insulating material is between the source/drain regions.

Abstract: In an LCD driver, in a high voltage resistant MISFET, end portions of a gate electrode run onto electric field relaxing insulation regions. Wires to become source wires or drain wires are formed on an interlayer insulation film of the first layer over the high voltage resistant MISFET. At this moment, when a distance from an interface between a semiconductor substrate and a gate insulation film to an upper portion of the gate electrode is defined as “a”, and a distance from the upper portion of the gate electrode to an upper portion of the interlayer insulation film on which the wires are formed is defined as “b”, a relation of a>b is established. In such a high voltage resistant MISFET structured in this manner, the wires are arranged so as not to be overlapped planarly with the gate electrode of the high voltage resistant MISFET.

Abstract: Fabrication of a field-effect transistor is performed on a substrate comprising a film made from first semiconductor material, a gate dielectric covered by a gate electrode, source and drain areas separated by the gate electrode, a protection layer covering gate electrode and source and drain areas, and an access hole to the source area and/or to drain area. Metallic material is deposited in the access hole in contact with the first semiconductor material of the source and/or drain area. An electrically conducting barrier layer that is non-reactive with the first semiconductor material and with the metallic material is deposited before reaction of metallic material with first semiconductor material. Transformation heat treatment of the metallic material with the semiconductor material is performed to form a metallic material having a base formed by the semiconductor material generating a set of stresses on a conduction channel arranged between the source and drain areas.

Abstract: A method is provided for fabricating a semiconductor device. The method includes providing a substrate having a device region and a peripheral region; and forming device structures on the substrate in the device region so as to form trenches between adjacent device structures. The method also includes forming a stop layer on the substrate and the device structures; and forming a first dielectric layer on the stop layer such that a portion of the densified first dielectric layer fills the trenches and a top surface of a portion of the first dielectric layer in the peripheral region is lower than a surface of the stop layer on the device structures by a densify high aspect ratio process. Further, the method includes forming a second dielectric layer on the densified first dielectric layer; and performing a plurality of polishing processes until the top surface of the device structures is exposed.

Abstract: A semiconductor device including source drain stressors is provided. The semiconductor device includes a gate structure including a gate insulating layer and a gate electrode on a semiconductor substrate. Gate spacers may be disposed on sidewalls of the gate structure and a stressor pattern including an impurity region is disposed on a side of the gate structure. The stressor pattern includes a protruded portion having a top surface higher than a bottom surface of the gate structure and a facet in the protruded portion. The facet is slanted at a predetermined angle with respect to an upper surface of the semiconductor substrate and forms a concave portion with one of the gate spacers. A blocking insulating layer may extend conformally on the stressor pattern and the gate spacers and an insulating wing pattern is disposed in the concave portion on the blocking insulating layer.

Abstract: An improved semiconductor structure and methods of fabrication that provide improved transistor contacts in a semiconductor structure are provided. A first block mask is formed over a portion of the semiconductor structure. This first block mask covers at least a portion of at least one source/drain (s/d) contact location. An s/d capping layer is formed over the s/d contact locations that are not covered by the first block mask. This s/d capping layer is comprised of a first capping substance. Then, a second block mask is formed over the semiconductor structure. This second block mask exposes at least one gate location. A gate capping layer, which comprises a second capping substance, is removed from the exposed gate location(s). Then a metal contact layer is deposited, which forms a contact to both the s/d contact location(s) and the gate contact location(s).

Abstract: A manufacturing method of a semiconductor device is provided. The manufacturing method includes the following steps. A plurality of fin structures are formed in a first area and a second area of a substrate. A first density of the fin structures in the first area is lower than a second density of the fin structures in the second area. A gate dielectric layer is formed on the fin structures. An amorphous silicon layer is formed on the gate dielectric layer and the fin structures in the first area and the second area. Part of the amorphous silicon layer which is disposed in the first area is annealed to form a crystalline silicon layer by a laser. The crystalline silicon layer disposed in the first area and the amorphous silicon layer disposed in the second area are polished.

Abstract: A memory device includes a memory array having a plurality of rows and columns of array blocks disposed in array block areas, array blocks including sub-arrays of memory cells arranged in rows and columns with word lines disposed in a patterned gate layer along the rows and one or more patterned conductor layers including bit lines disposed along the columns. A plurality of sets of local word line drivers is arranged in rows and columns disposed adjacent to corresponding array blocks. A set of global word line drivers driving global word lines disposed in an overlying patterned conductor layer over the one or more patterned conductor layers in the array blocks.

Abstract: Methods for self-aligned multiple patterning including controlled slimming of features during spacer layer deposition. Multiple spacer layer deposition process conditions produce a balance between controlling the damage to the features and increasing production throughput.

Abstract: A semiconductor device including a substrate, a plurality of isolation structures, at least a gate structure, a plurality of dummy gate structures and a plurality of epitaxial structures is provided. The substrate has an active area defined by the isolation structures disposed within the substrate. That is, the active area is defined between the isolation structures. The gate structure is disposed on the substrate and located within the active area. The dummy gate structures are disposed on the substrate and located out of the active area. The edge of each dummy gate structure is separated from the boundary of the active area with a distance smaller than 135 angstroms. The epitaxial structures are disposed within the active area and in a portion of the substrate on two sides of the gate structure. The invention also provided a method for fabricating semiconductor device.

Abstract: Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.

Abstract: A spacer etching process produces ultra-narrow polysilicon and gate oxides for insulated gates used with insulated gate transistors. Narrow channels are formed using dielectric and spacer film deposition techniques. The spacer film is removed from the dielectric wherein narrow channels are formed therein. Insulating gate oxides are grown on portions of the semiconductor substrate exposed at the bottoms of these narrow channels. Then the narrow channels are filled with polysilicon. The dielectric is removed from the face of the semiconductor substrate, leaving only the very narrow gate oxides and the polysilicon. The very narrow gate oxides and the polysilicon are separated into insulated gates for the insulated gate transistors.

Abstract: An integrated circuit having an improved gate contact and a method of making the circuit are provided. In an exemplary embodiment, the method includes receiving a substrate. The substrate includes a gate stack disposed on the substrate and an interlayer dielectric disposed on the gate stack. The interlayer dielectric is first etched to expose a portion of the gate electrode, and then the exposed portion of the gate electrode is etched to form a cavity. The cavity is shaped such that a portion of the gate electrode overhangs the electrode. A conductive material is deposited within the cavity and in electrical contact with the gate electrode. In some such embodiments, the etching of the gate electrode forms a curvilinear surface of the gate electrode that defines the cavity.

Abstract: A technique relates to a dual epitaxial process a device. A first spacer is disposed on a substrate, dummy gate, and hardmask. A first area extends in a first direction from the gate and a second area extends in an opposite direction. A doped intermediate spacer is disposed on the first spacer. A first region is opened on the substrate by removing first spacer and intermediate spacer at the first region. A first epitaxial layer is disposed in the first region. The intermediate spacer is removed from first area. A second spacer is disposed on the intermediate spacer. A second region is opened on the substrate by removing the first spacer, intermediate spacer, and second spacer. A second epitaxial layer is disposed in second region. The width of the second epitaxial layer is enlarged by annealing causing dopant in the intermediate spacer layer to flow into the second epitaxial layer.

Abstract: A finFET semiconductor device includes a semiconductor-on-insulator (SOI) substrate including a buried insulator layer, a plurality of semiconductor fins on the buried insulator layer, and a gate structure covering the semiconductor fins, at least one buried stressor element embedded in the buried insulator layer, and a source/drain element on an upper surface of the at least one buried stressor element and integrally formed with at least one semiconductor fin among the plurality of semiconductor fins, the at least one buried stressor element applying a stress upon the source/drain element from therebeneath.

Abstract: Techniques are disclosed for forming transistor devices having reduced parasitic contact resistance relative to conventional devices. The techniques can be implemented, for example, using a standard contact stack such as a series of metals on, for example, silicon or silicon germanium (SiGe) source/drain regions. In accordance with one example such embodiment, an intermediate boron doped germanium layer is provided between the source/drain and contact metals to significantly reduce contact resistance. Numerous transistor configurations and suitable fabrication processes will be apparent in light of this disclosure, including both planar and non-planar transistor structures (e.g., FinFETs), as well as strained and unstrained channel structures. Graded buffering can be used to reduce misfit dislocation. The techniques are particularly well-suited for implementing p-type devices, but can be used for n-type devices if so desired.