Abstract: According to one embodiment, a display device includes a TFT on an insulating substrate. The TFT includes a gate electrode, an insulating layer on the gate electrode, a semiconductor layer on the insulating layer, and a source electrode and a drain electrode each provided in contact with at least a part of the semiconductor layer. The source and drain electrodes have a laminated structure including a lower layer, an intermediate layer and an upper layer. The source and drain electrodes include sidewalls each including a first tapered portion on the upper layer side, a second tapered portion on the lower layer side and a sidewall protective film attached to the second tapered portion. The taper angle of the first tapered portion is smaller than that of the second tapered portion.

Abstract: The invention discloses a novel dry etching method, which comprises the following steps: forming a to-be-etched layer on a semiconductor substrate; forming a masking material on the to-be-etched layer; carrying out dry etching on the masking material and the to-be-etched layer; simultaneously carrying out lateral etching (parallel to the surface of the substrate) of a masking layer and longitudinal etching (vertical to the surface of the substrate) of the to-be-etched layer; and obtaining the inclination angle (the included angle between a slope surface and the surface of the substrate) of the corresponding etched slope surface by accurately controlling the speed ratio. The method can flexibly adjust the inclination angle of the etched slope surface within a large range (0-90 degrees), and especially has advantages in the field of the application with a small inclination angle (smaller than 20 degrees) of the etched slope surface in comparison with a conventional etching method.

Abstract: An array substrate, a display panel and a display device are provided. The array substrate comprises: an active area, a package area and a drive circuit area, wherein the drive circuit area is located between the active area and the package area. A package metal layer is provided at the package area, and at least one groove structure is provided on a side of the package metal layer in a proximity to the drive circuit area. At least one drive unit is provided at the drive circuit area and comprises at least one element, wherein the element is provided in the groove structure.

Abstract: An array substrate, a manufacturing method thereof and a display device are disclosed. The array substrate comprises a plurality of pixel unit regions each including a thin-film transistor (TFTs) and a pixel electrode. A first insulating layer provided with a first through hole and a second through hole is formed between an active layer of the TFT and the pixel electrode. A source electrode of the TFT is connected with the active layer through the first through hole. A drain electrode of the TFT is lapped onto the pixel electrode and connected with the active layer through the second through hole. The array substrate can prevent the oxidization of metal such as copper in the process of patterning a transparent conductive film.

Abstract: A fabrication method of a pixel structure is provided. The fabrication method includes: forming a gate electrode, a gate insulating layer, an active layer, a pixel electrode layer and a source-drain electrode layer on a substrate, and etching the source-drain electrode layer by using a photoresist pattern to form a source electrode and a drain electrode; ashing the photoresist pattern, so as to align edges of the ashed photoresist pattern with edges of the source electrode and the drain electrode; etching a silicon oxide generated in ashing the photoresist pattern; and etching a semiconductor layer between the source electrode and the drain electrode by an etching process to form a channel. The fabrication method can remove indium-containing material remained on both sides of a source electrode and a drain electrode, and can resolve a problem that a width of a channel between the source electrode and the drain electrode is small.

Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

Abstract: A display, includes: a substrate; first signal lines (FSLs) at least partially recessed in the substrate and extending in substantially a direction; a gate insulating layer (GIL) disposed on the FSLs; a first electrode disposed on the GIL; a thin film transistor (TFT) connected to a FSL of the FSLs and including the GIL and the first electrode; a pixel electrode (PE) extending in substantially the direction, connected to the TFT, and configured to receive a data voltage from the TFT; a common electrode (CE) overlapping with at least a portion of the PE; and a first insulating layer disposed between the PE and CE. One of the PE and the CE has a planar shape and the other includes branch electrodes overlapping with the planar shape and extending substantially parallel to the FSL. At least a portion of the CE overlaps with at least a portion of the FSL.

Abstract: An array substrate is provided, wherein a pixel electrode has the same material as a source/drain and has a thickness less than that of the source/drain, or a common electrode has the same material as a gate and has a thickness less than that of the gate, which guarantees transmittance of the array substrate while reducing the process complexity. A display device and a manufacturing method of the array substrate are also provided.

Abstract: A display panel and a display device are provided to better protect a metal connecting line area in a peripheral wiring region, improve the protection degree and prevent the wire breakage. The display panel includes a gate insulating layer (102) disposed on a gate metal layer (101); and a protective layer (103), a passivation layer (105) and an indium tin oxide (ITO) coating layer (107) disposed on the gate insulating layer in sequence. The display panel and the display device can increase the film thickness in the peripheral wiring region, and hence can protect the entire peripheral wiring region and particularly the metal connecting line area exposed outside a color filter panel and improve the protection degree.

Abstract: A thin film transistor includes a substrate, a gate electrode disposed on the substrate, a channel layer located on the gate electrode, a gate insulation layer disposed between the gate electrode and the channel layer, an etching stop layer disposed on the channel layer, and a source electrode and a drain electrode disposed on the etching stop layer. The gate electrode has multiple through holes, the etching stop layer has multiple contact holes overlapped with the through holes in a direction perpendicular to the substrate, and the source and drain electrodes are respectively electrically connected to the channel layer through the contact holes. A method of manufacturing the thin film transistor, where the contact holes in the etching stop layer are formed by backside exposure using the gate electrode as a mask. A conductivity of a region of the channel layer exposed by the contact holes has a great conductivity.

Abstract: Embodiments of the disclosure provide a thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device. The thin film transistor comprises a substrate (1), and a gate electrode (2), a source electrode (41) and a drain electrode (42) provided on the substrate. A projection of a gap between the source electrode (41) and the drain electrode (42) on the substrate (1) coincides with a projection of the gate electrode (2) on the substrate (1).

Abstract: A liquid crystal display (LCD) panel, an LCD and a manufacturing method thereof. The LCD panel comprises a first substrate (1) and a second substrate (2) arranged opposite to each other; a liquid crystal layer (3) is disposed between the first substrate (1) and the second substrate (2); the first substrate (1) comprises a plurality of pixel regions; each pixel region comprises a transmission section (4) and a reflection section (5); the first substrate is provided with a reflective layer (6) disposed in the reflection section (5); polymers (30) formed by polymerization of ultraviolet curable monomers are uniformly distributed in the liquid crystal layer (3) of the reflection section (5). The LCD panel adopts a single cell gap and controls the phase retardation amount of reflected light emitted out from the reflection section (5) through the polymers (30), so that phase of the reflected light can match with the phase of transmitted light emitted out from the transmission section (6).

Abstract: A display panel includes an active area and a peripheral area surrounding the active area, and includes first and second substrates, a shading layer and an adhesive agent. The second substrate is disposed opposite the first substrate. The shading layer is disposed on the first substrate and corresponds to the peripheral area. The shading layer includes a first contact surface contacting with the first substrate, the first contact surface has a first edge. The adhesive agent is disposed between the first substrate and the second substrate and corresponds to the shading layer. The adhesive agent includes two second contact surfaces respectively facing the first substrate and the second substrate, one of the second surfaces has a second edge near the active area, and the line edge roughness of the second edge is greater than that of the first edge.

Abstract: An object is to reduce the number of photomasks used for manufacturing a transistor and manufacturing a display device to less than the conventional one. The display device is manufactured through, in total, three photolithography steps including one photolithography step which serves as both a step of forming a gate electrode and a step of forming an island-like semiconductor layer, one photolithography step of forming a contact hole after a planarization insulating layer is formed, and one photolithography step which serves as both a step of forming a source electrode and a drain electrode and a step of forming a pixel electrode.

Abstract: A transparent conductive thin film and an electronic device including the same are disclosed, the transparent conductive thin film including a titanium nitride or a zirconium nitride having a heterometal element selected from zinc (Zn), gallium (Ga), indium (In), and a combination thereof.

Abstract: The present invention provides a liquid crystal panel and a manufacture method thereof. The liquid crystal panel comprises: a first substrate (1), a TFT layer (2) located on the first substrate (1), a color resist layer (3) located on the TFT layer (2), a photospacer layer (4) located on the color resist layer (3), a protective layer (5) located on the color resist layer (3) and the photospacer layer (4), a via hole (6) penetrating the color resist layer (3) and the protective layer (5), a pixel electrode layer (7) formed on the protective layer (5) and electrically connected to the TFT layer (2) with the via hole (6) and a second substrate (8) oppositely located to the first substrate (1), and one or more color resist material in the photospacer layer (4) and the color resist layer (3) are the same, and the photospacer layer (4) and the color resist layer (3) are formed at the same time during a manufacture process.

Abstract: A flexible display comprises a flexible substrate made of plastic material, a display element on a first surface of the flexible substrate, and a surface residual film containing at least one of a metal material or a metal oxide material. The surface residual film is bonded to at least a part of a second surface of the flexible substrate. The second surface is opposed to the first surface. A method for manufacturing a flexible display comprises preparing a glass substrate, forming adhesive material film on the glass substrate, the adhesive material film being made of at least one of a metal material or a metal oxide material, and forming a flexible substrate from plastic material on the adhesive material film.

Abstract: An LCD device includes a first substrate including a display region having pixel regions and a non-display region disposed outside the display region; gate lines and data lines on the first substrate and cross each other to define the pixel regions; a TFT in each of the pixel regions; a pixel electrode in each pixel region and connected to the TFT; a second substrate disposed opposite the first substrate; a color filter layer on the second substrate; a common electrode; a liquid crystal layer between the first and second substrates; and an FPC connected to the non-display region on one side of the first substrate, the FPC being bent toward an outer side surface of the second substrate, wherein each of the gate lines has a double structure including a first layer of a transparent conductive material and a second layer of Cu or Cu alloy.

Abstract: The number of masks and photolithography processes used in a manufacturing process of a semiconductor device are reduced. A first conductive film is formed over a substrate; a first insulating film is formed over the first conductive film; a semiconductor film is formed over the first insulating film; a semiconductor film including a channel region is formed by etching part of the semiconductor film; a second insulating film is formed over the semiconductor film; a mask is formed over the second insulating film; a first portion of the second insulating film that overlaps the semiconductor film and second portions of the first insulating film and the second insulating film that do not overlap the semiconductor film are removed with the use of the mask; the mask is removed; and a second conductive film electrically connected to the semiconductor film is formed over at least part of the second insulating film.

Abstract: The present invention generally relates to a method of manufacturing a TFT. The TFT has an active channel that comprises IGZO or zinc oxide. After the source and drain electrodes are formed, but before the passivation layers or etch stop layers are deposited thereover, the active channel is exposed to an N2O or O2 plasma. The interface between the active channel and the passivation layers or etch stop layers are either altered or damaged during formation of the source and drain electrodes. The N2O or O2 plasma alters and repairs the interface between the active channel and the passivation or etch stop layers.

Abstract: Integrated circuits having nickel silicide contacts and methods for fabricating integrated circuits with nickel silicide contacts are provided. An exemplary method for fabricating an integrated circuit includes providing a semiconductor substrate and forming a nonvolatile memory structure over the semiconductor substrate. The nonvolatile memory structure includes a gate surface. The method further includes depositing a nickel-containing material over the gate surface. Also, the method includes annealing the nonvolatile memory structure and forming a nickel silicide contact on the gate surface from the nickel-containing material.

Abstract: A bonding pad structure of liquid crystal display, having a plurality of bonding pads formed at part of the upper surface of the edge area of the substrate, and an overcoat layer with one side being inclined surface and positioned at the other part of upper surface of the bonding pad. The inclined surface is formed when patterning the overcoat layer covering the bonding pad by using the mask with gradient transmittance and removing the overcoat layer formed at part of the upper surface of the bonding pad. Also discloses a manufacturing method of the bonding pad structure of liquid crystal display.

Abstract: The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

Abstract: An array substrate according to an embodiment includes a gate line and a data line in a display region and crossing each other to define a pixel region; first and second auxiliary patterns in a non-display region; a gate insulating layer between the gate and data lines and the first and second auxiliary patterns; a passivation layer on the data line and the second auxiliary pattern and including first and second contact holes respectively exposing the first and second auxiliary patterns; a planarization layer on the passivation layer and including first and second pack holes, which respectively correspond to the first and second contact holes; a bridge pattern between the first and second pack holes and overlapping the second auxiliary pattern; a pixel electrode on the planarization layer and in the pixel region; and a connection pattern on the bridge pattern and contacting the first and second auxiliary patterns.

Abstract: A TFT substrate and a method of manufacturing the TFT array substrate are disclosed. The method includes providing a substrate, forming an organic layer on the substrate, forming a first transparent conductive layer on the organic layer, and forming a photolithography layer on the first transparent conductive layer, where the photolithography layer has an opening. The method also includes patterning the first transparent conductive layer to form a first via hole in the first transparent layer using the photolithography layer as a mask, where the first via hole is aligned with the opening in the photolithography layer, and patterning the organic layer to form a second via hole in the organic using the photolithography layer as a mask, where the second via hole is aligned with the opening in the photolithography layer.

Abstract: A method of manufacturing a light emitting element includes, sequentially, (a) forming a mask layer for selective growth; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the mask layer; and (f) forming a first light reflecting layer formed from a multilayer film and a first electrode on the first surface of the first compound semiconductor layer.

Abstract: The present invention provides an array substrate and a manufacturing method thereof, a display panel and a display apparatus. The array substrate comprises: a base substrate; and a pixel region and a periphery region formed on the base substrate, wherein the periphery region is located around the pixel region, the pixel region comprises an amorphous silicon thin film transistor, and the periphery region comprises a low temperature poly-silicon structure. As the a-Si thin film transistor is used in the pixel region of the array substrate, the problem that there is a too large leakage current in the pixel region of the LTPS array substrate in the prior art is overcome, the leakage current in the pixel region is reduced, while as the LTPS structure is used in the periphery region of the array substrate, a narrow frame of the display panel and the display apparatus may be achieved.

Abstract: A thin film transistor and manufacturing method thereof, an array substrate comprising the thin film transistor and manufacturing method thereof are provided. The method of manufacturing the thin film transistor comprises forming an active layer and a source-drain electrode layer, forming a photoresist layer on the source-drain electrode layer and forming a pattern of the photoresist layer by a pattern process; etching the source-drain electrode layer by using the pattern of the photoresist layer as a mask to form a pattern of the source-drain electrode layer including a source electrode and a drain electrode; and removing the photoresist, then etching the active layer by using the pattern of the source-drain electrode layer as a mask to form a pattern of the active layer.

Abstract: A touch panel is provided. The touch panel includes: a substrate, wherein the substrate includes a viewing region and a border region at an edge of the viewing region; a patterned transparent conductive layer formed on the substrate, wherein the patterned transparent conductive layer is formed on the viewing region and the border region, and the patterned transparent conductive layer has a touch sensitive function; and a patterned metal layer formed on the border region, wherein the patterned metal layer includes a contact region and a trace region connecting to the contact region, and at least a portion of the contact region overlaps with the patterned transparent conductive layer, wherein a shift range between the contact region and the patterned transparent conductive layer disposed on the border region adjacent to the contact region is smaller than about 150 ?m.

Abstract: The present invention relates to the field of liquid crystal display, and provides a method for manufacturing an array substrate, the array substrate, and a display device. In the array substrate, a gate insulating layer between source and drain electrodes and a pattern of a gate electrode has a thickness greater than that of the gate insulating layer between an active layer and the pattern of the gate electrode. Due to the thick gate insulating layer between the source and drain electrodes and the pattern of the gate electrodes, the capacitance between the source and drain electrodes and the gate electrodes will be reduced.

Abstract: An exposure mask for forming a pattern in a photosensitive material includes a mask substrate which is disposed facing the photosensitive material; a body portion on the mask substrate and corresponding to a shape of the pattern at a distance furthest from the exposure mask; and a plurality of branch portions on the mask substrate and each extending outward from an outer edge of the body portion, in a plan view. The pattern comprises a contact hole of a display device.

Abstract: A method of manufacturing a display panel assembly includes: preparing a mother substrate on which are defined first regions and dummy regions respectively between adjacent first regions; forming pixel driving lines and pixels connected to the pixel driving lines on each of the first regions in a same process at the same time as forming circuit connection lines on each of the dummy regions; connecting a driving element which drives the pixels to the circuit connection lines of the dummy regions; dividing the mother substrate to separate the first regions and the dummy regions from each other, each of the separated first regions defining a thin film transistor board of the display panel assembly, and each of the separated dummy regions defining a driving circuit board of the display panel assembly; and connecting the driving circuit board to the thin film transistor board.

Abstract: An array substrate, a display panel and a preparing method thereof are disclosed. The array substrate comprises: a substrate, a gate line and a data line disposed on the substrate, a protective layer covering the gate line and/or data line; a light converging structure is disposed on the protective layer over the gate line and/or the data line.

Abstract: A method for manufacturing a thin film transistor array substrate includes: forming a polysilicon layer on the substrate; forming a gate insulating layer on the polysilicon layer; forming a metal oxide layer on the gate insulating layer; forming a gate metal layer on the metal oxide layer; etching the metal oxide layer to define a gate; using the gate as a second mask and etching the metal oxide layer excluding a scope of the second mask; performing ion-implantation by using the gate and a remainder of the metal oxide layer as a third mask to form two lightly doped drain regions at opposite sides of the polysilicon layer; forming an insulating layer on the gate and the gate insulating layer respectively; forming a metal layer on the insulating layer and defining a drain and a source which connect to the doped drain region and the doped source region respectively.

Abstract: The invention provides a solar cell and a method for manufacturing same. The solar cell contains a carbon structure layer; a microstructure formed on the carbon structure layer; and a charge separation layer which includes a charge separation junction part and which is formed on the surface of the microstructure.

Abstract: Embodiments of the present invention include a method for manufacturing, and a structure for a thin film solar module. The method of manufacturing includes fabricating a thin film solar cell and fabricating an electronic conversion unit (ECU) on a single substrate. The thin film solar cell has at least one solar cell diode on a substrate. The ECU has at least one transistor on the substrate. The ECU may further comprise a capacitor and an inductor. The ECU is integrated on the substrate monolithically and electrically connected with the thin film solar cell. The ECU and the thin film solar cell interconnect to form a circuit on the substrate. The ECU is electrically connected to a microcontroller on the solar cell module.

Abstract: Provided is a method for forming a bezel pattern of a display panel, the method including: attaching a release film including a non-pattern portion to a panel; printing at least one bezel pattern by applying an ink composition on the panel; and removing the release film from the panel.

Abstract: A method of manufacturing an organic electroluminescence device is disclosed. In one aspect, the method includes forming color patterns on a substrate, and forming a pixel defining layer between the color patterns.

Abstract: The invention relates to a solar cell and to a method for manufacturing same. The solar cell contains a carbon structure layer; a microstructure formed on the carbon structure layer; and a thin-film layer covering the microstructure and including a charge separation junction part.

Abstract: A metal wire included in a display device, the metal wire includes a first metal layer including a nickel-chromium alloy, a first transparent oxide layer disposed on the first metal layer, and a second metal layer disposed on the first transparent oxide layer.

Abstract: A display apparatus includes a first base substrate that includes an upper surface and a lower surface facing the upper surface and includes a transmission area and a light blocking area, a low reflection conductive line disposed on the lower surface of the first base substrate, in which a portion of the lower reflection conductive line is overlapped with the transmission area to transmit a portion of an incident light, a second base substrate facing the lower surface of the first base substrate, and a pixel disposed between the first and second base substrates, at least a portion of the pixel being overlapped with the transmission area.

Abstract: An object is to provide a semiconductor device including an oxynitride semiconductor whose carrier density is controlled. By introducing controlled nitrogen into an oxide semiconductor layer, a transistor in which an oxynitride semiconductor having desired carrier density and on characteristics is used for a channel can be manufactured. Further, with the use of the oxynitride semiconductor, even when a low resistance layer or the like is not provided between an oxynitride semiconductor layer and a source electrode and between the oxynitride semiconductor layer and a drain electrode, favorable contact characteristics can be exhibited.

Abstract: The disclosure provides a touch panel, including: a substrate, wherein the substrate includes a viewing region and a border region at an edge of the viewing region; a patterned transparent conductive layer formed on the substrate, wherein the patterned transparent conductive layer formed on the viewing region has a touch sensitive function; and a patterned metal layer formed on the patterned transparent conductive layer and on the border region, wherein the patterned metal layer includes a contact region and a trace region connecting to the contact region, and at least a portion of the contact region overlaps with the patterned transparent conductive layer, and a shift range between a formation position of the contact region of the patterned metal layer and a formation position of the patterned transparent conductive layer is smaller than about 150 ?m.

Abstract: A liquid crystal display includes a first substrate and a second substrate facing the first substrate, a gate line and a data line disposed on the first substrate, and a pixel electrode disposed on the first substrate. The pixel electrode is connected to the gate line and the data line, and includes subregions. The liquid crystal display further includes a storage electrode disposed on the first substrate overlapping the pixel electrode to form a storage capacitor, a common electrode disposed on the second substrate, and a liquid crystal layer interposed between the pixel electrode and the common electrode and including liquid crystal molecules disposed therein. The pixel electrode includes a stem defining boundaries between the subregions, and a width of the stem changes from a center portion of the pixel electrode to a peripheral portion of the pixel electrode.

Abstract: A method of manufacturing a light emitting element includes, sequentially, (a) forming a mask layer for selective growth; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the mask layer; and (f) forming a first light reflecting layer formed from a multilayer film and a first electrode on the first surface of the first compound semiconductor layer.

Abstract: Embodiments of present invention provide a method of forming a semiconductor structure. The method includes forming a semiconductor structure having a first metal layer and a plurality of dielectric layers on top of the first metal layer; creating one or more openings through the plurality of dielectric layers to expose the first metal layer underneath the plurality of dielectric layers; causing the one or more openings to expand downward into the first metal layer and expand horizontally into areas underneath the plurality of dielectric layers; applying a layer of lining material in lining sidewalls of the one or more openings inside the plurality of dielectric layers; and filling the expanded one or more openings with a conductive material.

Abstract: An organic light-emitting device (OLED) display is disclosed. In one aspect, the display includes a substrate, a plurality of first electrodes separated from each other over the substrate and a second electrode facing and formed across the first electrodes. The display also includes an intermediate layer interposed between the first electrodes and the second electrode, wherein the intermediate layer comprises an emission layer. The display further includes a plurality of encapsulation layer portions patterned to be separated from each other in an island form over the second electrode.

Abstract: A method for etching is provided in which the etching selectivity of an amorphous semiconductor film to a crystalline semiconductor film is high. Part of a stacked semiconductor film in which an amorphous semiconductor film is provided on a crystalline semiconductor film is etched using a mixed gas of a Br-based gas, a F-based gas, and an oxygen gas, so that part of the crystalline semiconductor film provided in the stacked semiconductor film is exposed. Reduction in the film thickness of the exposed portion can be suppressed by performing the etching in such a manner. Moreover, when etching for forming a back channel portion of a thin film transistor is performed with the method for etching, favorable electric characteristics of the thin film transistor can be obtained. An insulating layer is preferably provided over the thin film transistor.

Abstract: A mobile phone is provided which includes a liquid crystal display device in which a front window and a touch panel are bonded together with an adhesive sheet, wherein a logo having plural layers is formed on a back side of the front window. A touch-panel flexible wiring substrate is mounted to the touch panel. A plane distance between an end portion of the plural layers of the logo and an end portion of the touch panel is set to greater than zero. With this configuration, it is possible to prevent a peeling stress on the adhesive sheet, even if a thickness of the adhesive sheet is smaller than the sum of a thickness of the touch-panel flexible wiring substrate and a thickness of the logo.

Abstract: A display device includes a thin film transistor and a wiring layer. The thin film transistor including a control electrode, a semiconductor layer facing the control electrode, a first electrode electrically connected to the semiconductor layer, and a second electrode including a metal film having resistance lower than that of the light transmissive material. The second electrode is electrically connected to each of the semiconductor layer and the wiring layer. A difference in ionization tendency between a material configuring the metal film and a conductive material configuring a part or whole of the wiring layer is smaller than a difference in ionization tendency between the light transmissive material and the conductive material.