Abstract: In one embodiment, a liquid crystal display device includes an array substrate having a sensor electrode and a plurality of pixel electrodes, and a counter substrate facing the array substrate. The sensor electrode includes an electric conductive oxide layer, a first electric conductive layer arranged on the electric conductive oxide layer and formed of one metal selected from the group consisting of molybdenum (Mo), titanium (Ti), nickel (nickel), and chromium (Cr), and a second electric conductive layer arranged on the first electric conductive layer and formed of aluminum. The plurality of pixel electrodes is arranged on the sensor electrode in a matrix shape so as to face the electric conductive oxide layer. Each pixel electrode is provided with slits. The thickness of the first electric conductive layer is equal to or less than 10% of the thickness of the second electric conductive layer.

Abstract: A liquid crystal display device includes: a substrate; a thin film transistor disposed on the substrate; a pixel electrode connected with the thin film transistor; and a roof layer disposed to face the pixel electrode, wherein a plurality of microcavities having respective liquid crystal injection holes are formed between the pixel electrode and the roof layer, and the microcavities are filled with electrically orientatable liquid crystal molecules, wherein a light blocking layer disposed adjacent to the injection holes is formed and covering the thin film transistor, wherein the light blocking layer is covered by a passivation layer.

Abstract: An electronic device may be provided with a display. The display may include display layers characterized by an active area and backlight structures that provide backlight to the active area. To accommodate components such as a button, an edge portion of a light guide plate in the backlight structures that does not overlap the active area is bent out of the plane of the light guide plate. The bent edge portion of the light guide plate may be formed by molding clear plastic in a die or by bending a flexible sheet of clear polymer. Flared structures may be formed on the flexible sheet of clear polymer to help guide light from light-emitting diodes into the flexible sheet of clear polymer. The flared structures may be formed by applying resin coating layers to the flexible sheet of clear polymer.

Abstract: A liquid crystal display includes a thin film transistor disposed on a substrate, a pixel electrode connected to the thin film transistor, a lower insulating layer disposed facing the pixel electrode, a roof layer disposed on the lower insulating layer, and a microcavity formed between the pixel electrode and the lower insulating layer. The microcavity includes a liquid crystal layer including a liquid crystal material. The liquid crystal display further includes a first groove formed between a first pixel area and a second pixel area, a second groove formed between the first pixel area and a third pixel area, wherein the first groove is covered by the roof layer, the second groove is exposed at a portion where the roof layer is removed, the first pixel area corresponds to the pixel electrode, and the first pixel area is disposed between the second pixel area and the third pixel area.

Abstract: In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

Abstract: A highly reliable light-emitting device and a manufacturing method thereof are provided. A light-emitting element and a terminal electrode are formed over an element formation substrate; a first substrate having an opening is formed over the light-emitting element and the terminal electrode with a bonding layer provided therebetween; an embedded layer is formed in the opening; a transfer substrate is formed over the first substrate and the embedded layer; the element formation substrate is separated; a second substrate is formed under the light-emitting element and the terminal electrode; and the transfer substrate and the embedded layer are removed. In addition, an anisotropic conductive connection layer is formed in the opening, and an electrode is formed over the anisotropic conductive connection layer. The terminal electrode and the electrode are electrically connected to each other through the anisotropic conductive connection layer.

Abstract: A liquid crystal display device includes a gate line on a substrate including a display region and a non-display region; odd and even data lines crossing the gate line to define a pixel region in the display region; a thin film transistor connected to the gate line and one of the odd and even data lines; a pixel electrode in the pixel region and connected to the thin film transistor; first and second data link lines electrically connected to the odd and even data lines, respectively, and formed with a gate insulating layer therebetween; and first and second data pad electrodes at one ends of the first and second data link lines, respectively.

Abstract: A liquid crystal display includes a substrate; a first electrode on the substrate; a second electrode on the first electrode and separated from the first electrode; a cavity defined between the first electrode and the second electrode; a first protection layer on the second electrode; a cover layer on the first protection layer; and a liquid crystal layer including liquid crystal molecules in the cavity. The second electrode includes metal oxide and zinc oxide.

Abstract: A display panel includes a gate line which extends substantially in a first direction, a first data line which extends substantially in a second direction substantially perpendicular to the first direction, a second data line spaced apart from the first data line in the first direction and which extends substantially in the second direction, a high pixel electrode disposed between the first data line and the second data line and disposed adjacent to the gate line, a low pixel electrode disposed between the first data line and the second data line and disposed opposite to the high pixel electrode with reference to the gate line, a high storage line which extends substantially in the second direction and overlaps the high pixel electrode, and a low storage line which extends substantially in the second direction and overlaps the low pixel electrode.

Abstract: A method of manufacturing a thin film transistor array substrate includes providing a plurality of gate lines and a plurality of data lines on a first substrate, providing an organic layer on the gate lines and the data lines, providing a first electrode on the organic layer, providing a passivation layer on the first electrode, providing a second electrode on the passivation layer, providing a first cover layer on the second electrode to cover the second electrode, providing a plurality of photosensitive layer patterns on the first cover layer, providing a plurality of first cutout patterns in the first cover layer and a plurality of second cutout patterns in the second electrode using the photosensitive layer patterns as an etch mask, and providing a plurality of third cutout patterns in the passivation layer using the first cover layer as an etch mask.

Abstract: The present invention discloses a method for preparing switch transistor comprising: sequentially forming a control electrode, an insulation layer, an active layer, and a source/drain metal layer of the switch transistor on a glass substrate; patterning the source/drain metal layer to expose the active layer; and proceeding an etching process to the exposed active layer in a way of gradually reducing etching rate to form a channel of the switch transistor. The present invention further discloses an equipment for etching the switch transistor. In the way mentioned above, the present invention can minimize the damages to the switch transistor and improve the reliability of the switch transistor.

Abstract: A display device and a method of manufacturing a display device are capable of preventing an alignment layer from being lumped in a microcavity. The display device includes: a substrate; a thin film transistor formed on the substrate; a pixel electrode connected to the thin film transistor; a roof layer formed on the pixel electrode; microcavities interposed between the pixel electrode and the roof layer; an injection hole formed in the roof layer, the injection hole configured to expose at least a portion of the microcavities; a first valley extended in one direction between the microcavities; an alignment layer formed on the pixel electrode, under the roof layer, and in the first valley; a liquid crystal layer filled in the microcavities; and an encapsulation layer formed on the roof layer, the encapsulation layer configured to cover the injection hole and to seal the microcavities.

Abstract: In an organic light-emitting display device and a method of manufacturing the organic light-emitting display device, the method includes forming thin film transistors (TFTs) on a substrate; and forming organic light emitting diodes (OLEDs), each of the OLEDs including a first electrode having a portion exposed by a pixel defining layer (PDL) on the TFTs, an organic layer on the exposed portion of the first electrode and including an emission layer (EML) configured to emit light having a respective one of a plurality of colors, and a second electrode on the organic layer. The EML is formed in each of a sub-pixel region with one color and other sub-pixel regions with other colors that are formed by forming openings in the PDL. A solution supply unit for sub-pixel region that communicates with the sub-pixel region with one color is formed in the sub-pixel region with one color.

Abstract: A light blocking member having variable transmittance, a display panel including the same, and a manufacturing method thereof. A light blocking member having a variable transmittance according to one exemplary embodiment includes a polymerizable compound, a binder, and a thermochromic material that exhibits a black color at a temperature below a threshold temperature and becomes transparent at a temperature above the threshold temperature.

Abstract: A thin-film transistor includes a semiconductor pattern, source and drain electrodes and a gate electrode, the semiconductor pattern is formed on a base substrate, and the semiconductor pattern includes metal oxide. The source and drain electrodes are formed on the semiconductor pattern such that the source and drain electrodes are spaced apart from each other and an outline of the source and drain electrodes is substantially same as an outline of the semiconductor pattern. The gate electrode is disposed in a region between the source and drain electrodes such that portions of the gate electrode are overlapped with the source and drain electrodes. Therefore, leakage current induced by light is minimized. As a result, characteristics of the thin-film transistor are enhanced, after-image is reduced to enhance display quality, and stability of manufacturing process is enhanced.

Abstract: A method for forming a thin film according to an exemplary embodiment of the present invention includes forming the thin film at a power density in the range of approximately 1.5 to approximately 3 W/cm2 and at a pressure of an inert gas that is in the range of approximately 0.2 to approximately 0.3 Pa. This process results in an amorphous metal thin film barrier layer that prevents undesired diffusion from adjacent layers, even when this barrier layer is thinner than many conventional barrier layers.

Abstract: A liquid crystal display includes a thin film transistor panel including a first alignment layer, an opposing panel including a second alignment layer, and opposite to the thin film transistor panel, and a liquid crystal layer between the thin film transistor panel and the opposing panel, and including liquid crystal molecules, wherein a difference between a pretilt angle provided by the first alignment layer and a pretilt angle provided by the second alignment layer is equal to or greater than about 0.8 degree.

Abstract: Provided is a liquid crystal display manufacturing method that is capable of improving the aperture ratio while suppressing unevenness in the display. The present invention is a method of manufacturing a liquid crystal display provided with an array substrate including an insulating layer, a source bus line and a pixel electrode, in which the source bus line and pixel electrode are provided on the insulating layer, and the source bus line includes a lower layer and an upper layer layered onto the lower layer. This manufacturing method includes a first photolithography step for using a first photomask to pattern the first conductive film, and, after the first photolithography step, a second photolithography step for using a second photomask to pattern at least a second conductive film and forming the source bus line and the pixel electrode.

Abstract: An electric-field exposure method includes forming a display cell. The display cell comprises a pixel electrode electrically connected to a data line and a gate line. A guard-ring line surrounds a display area on which the pixel electrode is disposed. A common electrode overlaps the guard-ring line. A resistance division part is connected to a node which is connected to a data pad and a gate pad. A first electrode and a second electrode are provided with first and second electronic signals, respectively. The first electrode is connected to the guard-ring line. The second electrode is electrically connected to the common electrode. The node is provided with a divided signal obtained by dividing the first and second signals through the resistance division part.

Abstract: A method of manufacturing a thin film transistor array substrate includes providing a plurality of gate lines and a plurality of data lines on a first substrate, providing an organic layer on the gate lines and the data lines, providing a first electrode on the organic layer, providing a passivation layer on the first electrode, providing a second electrode on the passivation layer, providing a first cover layer on the second electrode to cover the second electrode, providing a plurality of photosensitive layer patterns on the first cover layer, providing a plurality of first cutout patterns in the first cover layer and a plurality of second cutout patterns in the second electrode using the photosensitive layer patterns as an etch mask, and providing a plurality of third cutout patterns in the passivation layer using the first cover layer as an etch mask.

Abstract: A semiconductor structure includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric stacked layer. The oxide channel layer is stacked over the gate, with the gate insulting layer disposed therebetween. The source and the drain are disposed on a side of the oxide channel layer and in parallel to each other. A portion of the oxide channel layer is exposed between the source and the drain. The dielectric stacked layer is disposed on the substrate and includes plural of first inorganic dielectric layers with a first refraction index and plural of second inorganic dielectric layers with a second refraction index that are stacked alternately. At least one of the first inorganic dielectric layers directly covers the source, the drain and the portion of the oxide channel layer. The first refraction index is smaller than the second refraction index.

Abstract: According to one embodiment, a display device includes a main substrate, and a light control layer. The main substrate includes a main base having a main surface, a wavelength selective transmission layer provided on the main surface, and a circuit layer provided on the wavelength selective transmission layer. The light control layer is stacked with the main substrate and has variable optical characteristics. The wavelength selective transmission layer includes lower and upper reflecting layers, and first and second spacer layers. The upper reflecting layer is provided on the lower reflecting layer. The first spacer layer is provided between the lower and upper reflecting layers. The second spacer layer is provided between the lower and upper reflecting layers, and has a different thickness from the first spacer layer. The circuit layer includes first and second pixel electrodes, and first and second switching elements.

Abstract: A display device includes a substrate including a plurality of pixel areas, a thin film transistor positioned on the substrate, a first insulating layer positioned on the thin film transistor, a pixel electrode connected with the thin film transistor and positioned on the first insulating layer, a common electrode positioned on the pixel electrode and spaced apart from the pixel electrode by a microcavity, a second insulating layer positioned on the common electrode, a roof layer positioned on the second insulating layer, a thickness of the roof layer being about 4 ?m to about 50 ?m, an injection hole through the common electrode, the second insulating layer, and the roof layer, the injection hole exposing a part of the microcavity, a liquid crystal layer filling the microcavity, and an overcoat on the roof layer and extending into the injection hole, the overcoat sealing the microcavity.

Abstract: A liquid crystal display device includes a TFT substrate and a counter substrate on each of which an alignment film is formed and a liquid crystal interposed and held between the alignment films of the TFT and counter substrate, wherein the alignment film is made of a material capable of applying liquid crystal alignment regulation force by polarized light irradiation, a convex structure is formed on the TFT substrate or the counter substrate, and the alignment film is applied the liquid crystal alignment regulation force to a surface of a region ranging from the periphery of the convex structure to the vicinity of an inclined part of the convex structure and is not applied the liquid crystal alignment regulation force to a surface of the inclined part of the convex structure.

Abstract: A liquid crystal display includes a thin film transistor on a substrate, a pixel electrode connected to a first terminal of the thin film transistor, a roof layer above the pixel electrode, a microcavity between the pixel electrode and the roof layer, the microcavity including a liquid crystal injection hole, a partition wall in the microcavity, the partition wall partitioning the microcavity into a first area and a second area, and a liquid crystal layer with liquid crystal molecules in the microcavity, the liquid crystal molecules in the first area being a different type than the liquid crystal molecules in the second area.

Abstract: A method of manufacturing an array substrate for an FFS mode LCD device includes forming a gate line, a gate electrode and a pixel electrode on a substrate; forming a gate insulating layer; forming a data line, source and drain electrodes, and a semiconductor layer on the gate insulating layer, the drain electrode overlapping the pixel electrode; forming a passivation layer on the data line, the source and drain electrodes; forming a contact hole exposing the drain electrode and the pixel electrode by patterning the passivation layer and the gate insulating layer; and forming a common electrode and a connection pattern on the passivation layer, wherein the common electrode includes bar-shaped openings and a hole corresponding to the contact hole, and the connection pattern is disposed in the hole, is spaced apart from the common electrode and contacts the drain electrode and the pixel.

Abstract: A method of applying a conversion means to an optoelectronic semiconductor chip includes preparing the optoelectronic semiconductor chip having a main radiation face, preparing the conversion means, the conversion means being applied to a main carrier face of a carrier, arranging the conversion means such that it faces the main radiation face and has a spacing relative to the main radiation face, and releasing the conversion means from the carrier and applying the conversion means to the main radiation face by irradiation and heating of an absorber constituent of the conversion means and/or of a release layer located between the conversion means and the carrier with a pulsed laser radiation which passes through the carrier.

Abstract: A display device includes a light source generating light and a thin film transistor array panel including a pixel electrode and a common electrode. The display includes an upper panel and a quantum rod layer positioned between the thin film transistor array panel and the upper panel. The display includes an upper polarizer attached outside of the upper panel, in which the quantum rod layer includes quantum rods, and an arrangement direction of the quantum rods is controlled by an electric field generated by the pixel electrode and the common electrode, light is polarized according to the controlled arrangement direction, and the polarizer controls the transmission degree of the polarized light from the quantum rods according to the arrangement direction of the quantum rods.

Abstract: A method for fabricating a liquid crystal display device including a TFT substrate having an alignment film formed thereon, an opposing substrate, and a liquid crystal layer sandwiched therebetween. The alignment film on the TFT substrate includes a photolytic polymer made from a first precursor including cyclobutane, and a non-photolytic polymer made from a second precursor. The method includes the steps of depositing a mixture material including the first precursor and the second precursor in which the second precursor settles more on an upper surface of the TFT substrate than the first precursor, imidizing the mixture material, and irradiating the mixture material with ultraviolet light for photo-alignment, and after irradiating, heating the mixture material to form the alignment film.

Abstract: A light source unit includes a light source configured to emit a light, a first case including a first groove configured to receive the light source therein, a first sealing member disposed in the first groove and covering the light source, a second case disposed on the first case and including a first opening portion overlapping with the first groove, and a quantum dot member disposed between the first case and the second case and including a light conversion area configured to convert the light to a white light and a defect area surrounding the light conversion area. The first opening portion is disposed through the second case, a portion of the light conversion area overlaps with the first opening portion and the first groove, and the light source unit is configured such that the white light exits therefrom through the first opening portion.

Abstract: The present invention relates to a light-emitting diode (LED) and a method for manufacturing the same. The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.

Abstract: An array substrate for a liquid crystal display (LCD) and manufacturing method thereof are provided. The array substrate for a liquid crystal display (LCD) includes: a substrate, including: a gate electrode, a pixel electrode, and a common electrode, a gate pad formed on the substrate, and connected to the gate electrode, a gate insulating layer formed on the gate pad, a first protective layer formed on the gate insulating layer, a second protective layer formed on the first protective layer, a first metal layer formed on the second protective layer, and connected to the gate pad through a first contact hole which exposes the gate pad, a third protective layer formed on the first metal layer and the second protective layer, and a second metal layer formed on the third protective layer, and connected to the first metal layer through a second contact hole which exposes the first metal layer.

Abstract: A method of manufacturing an array substrate for a fringe field switching mode liquid crystal display includes: forming an auxiliary insulating layer on a second passivation layer and having a first thickness; forming first and second photoresist patterns on the auxiliary insulating layer and having second and third thicknesses, respectively, the second thickness greater than the third thickness; etching the auxiliary insulating layer, the second passivation layer and a first passivation layer to form a drain contact hole; performing an ashing to remove the second photoresist pattern and expose the auxiliary insulating layer therebelow; performing a dry etching to remove the auxiliary insulating layer not covered by the first photoresist pattern and expose the first passivation layer and to form an insulating pattern below the first photoresist pattern, the insulating pattern and the first photoresist pattern forming an undercut shape; forming a transparent conductive material layer having a fourth thickness

Abstract: A liquid crystal cell is disclosed. The cell includes a first substrate, and a first overcoat layer. The first substrate includes first and second regions. The cell also includes a barrier layer on the first overcoat layer in the first region, a second substrate bonded with the first substrate, and a first spacer on the second substrate, where the first spacer is aligned with the first region. The cell also includes a second spacer on the second substrate facing the first substrate, where the second spacer aligns with the second region, and the length of the first spacer is greater than or equal to the length of the second spacer. The cell also includes a liquid crystal layer between the first and second substrates, where the area of a lower surface of the barrier layer is greater than the area of a lower surface of the first spacer.

Abstract: A display device having a touch sensor and a manufacturing method thereof. The display device includes a pixel defining layer, first electrodes, an emissive layer, second electrodes, and an insulating layer. The first electrodes are exposed and arranged through the pixel defining layer. The emissive layer is formed on each first electrode. Each second electrode is connected to the emissive layer, and the second electrodes are arranged to be spaced apart from each other. The insulating pattern is formed on the pixel defining layer exposed between adjacent second electrodes.

Abstract: A curved display device includes a thin film transistor display unit including a first insulation substrate; a common electrode display unit disposed opposite to the thin film transistor display unit and including a second insulation substrate; a liquid crystal layer disposed between the thin film transistor display unit and the common electrode display unit; and a plurality of color filters disposed on the first insulation substrate or the second insulation substrate, where each color filter includes an overlapping compensation region, which overlaps an adjacent color filter, and a non-overlapping region, which does not overlap the adjacent color filter, the overlapping compensation region defines a stepped region having a step height with the non-overlapping region.

Abstract: A liquid crystal display device is fabricated by forming a first alignment layer on a first base substrate. A second alignment layer is formed on a second base substrate. A liquid crystal is disposed on one of the first alignment layer and the second alignment layer. The first base substrate and the second base substrate are combined. At least one of the first alignment layer and the second alignment layer is formed by forming an alignment solution on a corresponding base substrate. An alignment layer is formed by curing the alignment solution. The alignment layer is aligned by radiating a light onto the base substrate, first cleaning the base substrate, and baking the alignment layer.

Abstract: Disclosed are a light emitting apparatus and a lighting system. The light emitting apparatus includes a body, a first electrode having a protrusion pattern on the body, a second electrode electrically separated from the first electrode on the body, an adhesive layer on the first electrode including the protrusion pattern, and a light emitting device on the adhesive layer.

Abstract: A display panel includes a substrate including a plurality of thin-film transistors thereon, a plurality of gate lines respectively connected to a thin film transistor and disposed on the substrate, a color filter layer disposed on the substrate and the gate lines, a black matrix disposed on the color filter and overlapped with the gate lines, and a hole defined in the black matrix and exposing the color filter layer, a first electrode disposed on the color filter and electrically connected to the thin-film transistor and an image displaying layer disposed on the first electrode.

Abstract: A display panel includes a display substrate and a reflection prevention pattern. The display substrate includes a first substrate, a plurality of signal lines on an inner surface of the first substrate, and a plurality of pixels coupled to corresponding ones of the signal lines. The reflection prevention pattern is on an outer surface of the first substrate and overlaps the signal lines.

Abstract: An ink containing an electroluminescent light emitting material is discharged onto a buffer layer. The discharge amount of the ink is larger than a maximum volume where the ink is retained by the surface tension thereof on the top surface of the buffer layer.

Abstract: A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.

Abstract: A method includes: a step of forming a gate electrode (14) on a substrate (10a); a step of forming a gate insulating film (15) to cover the gate electrode (14), and then forming an In-Ga-Zn-O-based oxide semiconductor layer (16) in which a ratio of In:Ga:Zn in atomic % is 1:1:1 or 4:5:1 on the gate insulating film (15) to overlap the gate electrode (14); a step of forming a source electrode (19a) and a drain electrode (19b) on the oxide semiconductor layer (16) to overlap the gate electrode (14) and to face each other; and a step of performing an annealing process in an atmosphere containing steam (S) on the substrate (10a) provided with the source electrode (19a) and the drain electrode (19b).

Abstract: A liquid crystal display device includes a first substrate and a second substrate with a liquid crystal layer therebetween. The first substrate includes drain lines, gate lines, thin-film transistors that output signals to pixel electrodes, and an organic film that is formed between each thin-film transistor and each pixel electrode. The organic film has a contact hole for electrical connection between a source electrode of each thin-film transistor and each pixel electrode. A step is formed in a layer underlying the organic film and an edge portion of the organic film toward the thin-film transistor, the edge portion forming the contact hole, being formed to lie on a lower plane of the step. A sidewall part of the contact hole which is formed in the organic film is formed to have a taper angle of at least 60 degrees.

Abstract: A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.

Abstract: A display device includes: a substrate including a plurality of pixel areas; a thin film transistor formed on the substrate; a pixel electrode connected to the thin film transistor and formed in at least one of the plurality of pixel areas; a roof layer formed on the pixel electrode to be spaced apart from the pixel electrode by a microcavity therebetween; an injection hole formed on the roof layer so as to expose a part of the microcavity; a liquid crystal layer configured to fill the microcavity; at least one support member adjacent to the injection hole and formed in a column shape in the microcavity; and an encapsulation layer formed on the roof layer so as to cover the injection hole to seal the microcavity.

Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer, an electrode electrically connected to the first conductive semiconductor layer, a reflective layer under the second conductive semiconductor layer, a protective layer disposed around a lower surface of the second conductive semiconductor layer, and a buffer layer disposed on at least one of top and lower surfaces of the protective layer.

Abstract: Disclosed are a liquid crystal display (LCD) device and a method of manufacturing the same, which can increase a transmittance of a high-resolution pixel. The LCD device includes a gate line formed to be shared by vertically adjacent first and second pixels, a data line formed to interest the gate line, first and second thin film transistors (TFTs) respectively formed in the first and second pixels, a passivation layer formed to cover the first and second TFTs, including a contact hole that exposes drains of the first and second TFTs, first and second pixel electrodes formed on the passivation layer and in the contact hole, and respectively connected to the drains of the first and second TFTs, and a common electrode formed under or on the first and second pixel electrodes.

Abstract: The present invention provides a liquid crystal display device in which even in the case of using a photo-alignment technique, excellent afterimage characteristics can be stably obtained. Provided is a liquid crystal display device including a TFT substrate having an alignment film, an opposed substrate which is arranged to face the TFT substrate and on which an alignment film is formed, and a liquid crystal layer sandwiched between the alignment films, wherein the alignment films are materials that can provide a liquid crystal alignment restraining force by irradiating polarized light, and the ratio of oxygen atoms on the surface of the alignment film is higher than that in the alignment film.

Abstract: The number of photomasks is reduced in a method for manufacturing a liquid crystal display device which operates in a fringe field switching mode, whereby a manufacturing process is simplified and manufacturing cost is reduced. A first transparent conductive film and a first metal film are sequentially stacked over a light-transmitting insulating substrate; the first transparent conductive film and the first metal film are shaped using a multi-tone mask which is a first photomask; an insulating film, a first semiconductor film, a second semiconductor film, and a second metal film are sequentially stacked; the second metal film and the second semiconductor film are shaped using a multi-tone mask which is a second photomask; a protective film is formed; the protective film is shaped using a third photomask; a second transparent conductive film is formed; and the second transparent conductive film is shaped using a fourth photomask.