Abstract: The present invention generally relates to a method of manufacturing a TFT. The TFT has an active channel that comprises IGZO or zinc oxide. After the source and drain electrodes are formed, but before the passivation layers or etch stop layers are deposited thereover, the active channel is exposed to an N2O or O2 plasma. The interface between the active channel and the passivation layers or etch stop layers are either altered or damaged during formation of the source and drain electrodes. The N2O or O2 plasma alters and repairs the interface between the active channel and the passivation or etch stop layers.

Abstract: Integrated circuits having nickel silicide contacts and methods for fabricating integrated circuits with nickel silicide contacts are provided. An exemplary method for fabricating an integrated circuit includes providing a semiconductor substrate and forming a nonvolatile memory structure over the semiconductor substrate. The nonvolatile memory structure includes a gate surface. The method further includes depositing a nickel-containing material over the gate surface. Also, the method includes annealing the nonvolatile memory structure and forming a nickel silicide contact on the gate surface from the nickel-containing material.

Abstract: The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

Abstract: A bonding pad structure of liquid crystal display, having a plurality of bonding pads formed at part of the upper surface of the edge area of the substrate, and an overcoat layer with one side being inclined surface and positioned at the other part of upper surface of the bonding pad. The inclined surface is formed when patterning the overcoat layer covering the bonding pad by using the mask with gradient transmittance and removing the overcoat layer formed at part of the upper surface of the bonding pad. Also discloses a manufacturing method of the bonding pad structure of liquid crystal display.

Abstract: An array substrate according to an embodiment includes a gate line and a data line in a display region and crossing each other to define a pixel region; first and second auxiliary patterns in a non-display region; a gate insulating layer between the gate and data lines and the first and second auxiliary patterns; a passivation layer on the data line and the second auxiliary pattern and including first and second contact holes respectively exposing the first and second auxiliary patterns; a planarization layer on the passivation layer and including first and second pack holes, which respectively correspond to the first and second contact holes; a bridge pattern between the first and second pack holes and overlapping the second auxiliary pattern; a pixel electrode on the planarization layer and in the pixel region; and a connection pattern on the bridge pattern and contacting the first and second auxiliary patterns.

Abstract: A TFT substrate and a method of manufacturing the TFT array substrate are disclosed. The method includes providing a substrate, forming an organic layer on the substrate, forming a first transparent conductive layer on the organic layer, and forming a photolithography layer on the first transparent conductive layer, where the photolithography layer has an opening. The method also includes patterning the first transparent conductive layer to form a first via hole in the first transparent layer using the photolithography layer as a mask, where the first via hole is aligned with the opening in the photolithography layer, and patterning the organic layer to form a second via hole in the organic using the photolithography layer as a mask, where the second via hole is aligned with the opening in the photolithography layer.

Abstract: A method of manufacturing a light emitting element includes, sequentially, (a) forming a mask layer for selective growth; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the mask layer; and (f) forming a first light reflecting layer formed from a multilayer film and a first electrode on the first surface of the first compound semiconductor layer.

Abstract: A thin film transistor and manufacturing method thereof, an array substrate comprising the thin film transistor and manufacturing method thereof are provided. The method of manufacturing the thin film transistor comprises forming an active layer and a source-drain electrode layer, forming a photoresist layer on the source-drain electrode layer and forming a pattern of the photoresist layer by a pattern process; etching the source-drain electrode layer by using the pattern of the photoresist layer as a mask to form a pattern of the source-drain electrode layer including a source electrode and a drain electrode; and removing the photoresist, then etching the active layer by using the pattern of the source-drain electrode layer as a mask to form a pattern of the active layer.

Abstract: The present invention provides an array substrate and a manufacturing method thereof, a display panel and a display apparatus. The array substrate comprises: a base substrate; and a pixel region and a periphery region formed on the base substrate, wherein the periphery region is located around the pixel region, the pixel region comprises an amorphous silicon thin film transistor, and the periphery region comprises a low temperature poly-silicon structure. As the a-Si thin film transistor is used in the pixel region of the array substrate, the problem that there is a too large leakage current in the pixel region of the LTPS array substrate in the prior art is overcome, the leakage current in the pixel region is reduced, while as the LTPS structure is used in the periphery region of the array substrate, a narrow frame of the display panel and the display apparatus may be achieved.

Abstract: A touch panel is provided. The touch panel includes: a substrate, wherein the substrate includes a viewing region and a border region at an edge of the viewing region; a patterned transparent conductive layer formed on the substrate, wherein the patterned transparent conductive layer is formed on the viewing region and the border region, and the patterned transparent conductive layer has a touch sensitive function; and a patterned metal layer formed on the border region, wherein the patterned metal layer includes a contact region and a trace region connecting to the contact region, and at least a portion of the contact region overlaps with the patterned transparent conductive layer, wherein a shift range between the contact region and the patterned transparent conductive layer disposed on the border region adjacent to the contact region is smaller than about 150 ?m.

Abstract: The present invention relates to the field of liquid crystal display, and provides a method for manufacturing an array substrate, the array substrate, and a display device. In the array substrate, a gate insulating layer between source and drain electrodes and a pattern of a gate electrode has a thickness greater than that of the gate insulating layer between an active layer and the pattern of the gate electrode. Due to the thick gate insulating layer between the source and drain electrodes and the pattern of the gate electrodes, the capacitance between the source and drain electrodes and the gate electrodes will be reduced.

Abstract: An exposure mask for forming a pattern in a photosensitive material includes a mask substrate which is disposed facing the photosensitive material; a body portion on the mask substrate and corresponding to a shape of the pattern at a distance furthest from the exposure mask; and a plurality of branch portions on the mask substrate and each extending outward from an outer edge of the body portion, in a plan view. The pattern comprises a contact hole of a display device.

Abstract: A method of manufacturing a display panel assembly includes: preparing a mother substrate on which are defined first regions and dummy regions respectively between adjacent first regions; forming pixel driving lines and pixels connected to the pixel driving lines on each of the first regions in a same process at the same time as forming circuit connection lines on each of the dummy regions; connecting a driving element which drives the pixels to the circuit connection lines of the dummy regions; dividing the mother substrate to separate the first regions and the dummy regions from each other, each of the separated first regions defining a thin film transistor board of the display panel assembly, and each of the separated dummy regions defining a driving circuit board of the display panel assembly; and connecting the driving circuit board to the thin film transistor board.

Abstract: An array substrate, a display panel and a preparing method thereof are disclosed. The array substrate comprises: a substrate, a gate line and a data line disposed on the substrate, a protective layer covering the gate line and/or data line; a light converging structure is disposed on the protective layer over the gate line and/or the data line.

Abstract: The invention provides a solar cell and a method for manufacturing same. The solar cell contains a carbon structure layer; a microstructure formed on the carbon structure layer; and a charge separation layer which includes a charge separation junction part and which is formed on the surface of the microstructure.

Abstract: A method for manufacturing a thin film transistor array substrate includes: forming a polysilicon layer on the substrate; forming a gate insulating layer on the polysilicon layer; forming a metal oxide layer on the gate insulating layer; forming a gate metal layer on the metal oxide layer; etching the metal oxide layer to define a gate; using the gate as a second mask and etching the metal oxide layer excluding a scope of the second mask; performing ion-implantation by using the gate and a remainder of the metal oxide layer as a third mask to form two lightly doped drain regions at opposite sides of the polysilicon layer; forming an insulating layer on the gate and the gate insulating layer respectively; forming a metal layer on the insulating layer and defining a drain and a source which connect to the doped drain region and the doped source region respectively.

Abstract: Embodiments of the present invention include a method for manufacturing, and a structure for a thin film solar module. The method of manufacturing includes fabricating a thin film solar cell and fabricating an electronic conversion unit (ECU) on a single substrate. The thin film solar cell has at least one solar cell diode on a substrate. The ECU has at least one transistor on the substrate. The ECU may further comprise a capacitor and an inductor. The ECU is integrated on the substrate monolithically and electrically connected with the thin film solar cell. The ECU and the thin film solar cell interconnect to form a circuit on the substrate. The ECU is electrically connected to a microcontroller on the solar cell module.

Abstract: Provided is a method for forming a bezel pattern of a display panel, the method including: attaching a release film including a non-pattern portion to a panel; printing at least one bezel pattern by applying an ink composition on the panel; and removing the release film from the panel.

Abstract: A method of manufacturing an organic electroluminescence device is disclosed. In one aspect, the method includes forming color patterns on a substrate, and forming a pixel defining layer between the color patterns.

Abstract: The invention relates to a solar cell and to a method for manufacturing same. The solar cell contains a carbon structure layer; a microstructure formed on the carbon structure layer; and a thin-film layer covering the microstructure and including a charge separation junction part.

Abstract: A metal wire included in a display device, the metal wire includes a first metal layer including a nickel-chromium alloy, a first transparent oxide layer disposed on the first metal layer, and a second metal layer disposed on the first transparent oxide layer.

Abstract: An object is to provide a semiconductor device including an oxynitride semiconductor whose carrier density is controlled. By introducing controlled nitrogen into an oxide semiconductor layer, a transistor in which an oxynitride semiconductor having desired carrier density and on characteristics is used for a channel can be manufactured. Further, with the use of the oxynitride semiconductor, even when a low resistance layer or the like is not provided between an oxynitride semiconductor layer and a source electrode and between the oxynitride semiconductor layer and a drain electrode, favorable contact characteristics can be exhibited.

Abstract: A display apparatus includes a first base substrate that includes an upper surface and a lower surface facing the upper surface and includes a transmission area and a light blocking area, a low reflection conductive line disposed on the lower surface of the first base substrate, in which a portion of the lower reflection conductive line is overlapped with the transmission area to transmit a portion of an incident light, a second base substrate facing the lower surface of the first base substrate, and a pixel disposed between the first and second base substrates, at least a portion of the pixel being overlapped with the transmission area.

Abstract: The disclosure provides a touch panel, including: a substrate, wherein the substrate includes a viewing region and a border region at an edge of the viewing region; a patterned transparent conductive layer formed on the substrate, wherein the patterned transparent conductive layer formed on the viewing region has a touch sensitive function; and a patterned metal layer formed on the patterned transparent conductive layer and on the border region, wherein the patterned metal layer includes a contact region and a trace region connecting to the contact region, and at least a portion of the contact region overlaps with the patterned transparent conductive layer, and a shift range between a formation position of the contact region of the patterned metal layer and a formation position of the patterned transparent conductive layer is smaller than about 150 ?m.

Abstract: A liquid crystal display includes a first substrate and a second substrate facing the first substrate, a gate line and a data line disposed on the first substrate, and a pixel electrode disposed on the first substrate. The pixel electrode is connected to the gate line and the data line, and includes subregions. The liquid crystal display further includes a storage electrode disposed on the first substrate overlapping the pixel electrode to form a storage capacitor, a common electrode disposed on the second substrate, and a liquid crystal layer interposed between the pixel electrode and the common electrode and including liquid crystal molecules disposed therein. The pixel electrode includes a stem defining boundaries between the subregions, and a width of the stem changes from a center portion of the pixel electrode to a peripheral portion of the pixel electrode.

Abstract: An organic light-emitting device (OLED) display is disclosed. In one aspect, the display includes a substrate, a plurality of first electrodes separated from each other over the substrate and a second electrode facing and formed across the first electrodes. The display also includes an intermediate layer interposed between the first electrodes and the second electrode, wherein the intermediate layer comprises an emission layer. The display further includes a plurality of encapsulation layer portions patterned to be separated from each other in an island form over the second electrode.

Abstract: A method of manufacturing a light emitting element includes, sequentially, (a) forming a mask layer for selective growth; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the mask layer; and (f) forming a first light reflecting layer formed from a multilayer film and a first electrode on the first surface of the first compound semiconductor layer.

Abstract: Embodiments of present invention provide a method of forming a semiconductor structure. The method includes forming a semiconductor structure having a first metal layer and a plurality of dielectric layers on top of the first metal layer; creating one or more openings through the plurality of dielectric layers to expose the first metal layer underneath the plurality of dielectric layers; causing the one or more openings to expand downward into the first metal layer and expand horizontally into areas underneath the plurality of dielectric layers; applying a layer of lining material in lining sidewalls of the one or more openings inside the plurality of dielectric layers; and filling the expanded one or more openings with a conductive material.

Abstract: A mobile phone is provided which includes a liquid crystal display device in which a front window and a touch panel are bonded together with an adhesive sheet, wherein a logo having plural layers is formed on a back side of the front window. A touch-panel flexible wiring substrate is mounted to the touch panel. A plane distance between an end portion of the plural layers of the logo and an end portion of the touch panel is set to greater than zero. With this configuration, it is possible to prevent a peeling stress on the adhesive sheet, even if a thickness of the adhesive sheet is smaller than the sum of a thickness of the touch-panel flexible wiring substrate and a thickness of the logo.

Abstract: A method for etching is provided in which the etching selectivity of an amorphous semiconductor film to a crystalline semiconductor film is high. Part of a stacked semiconductor film in which an amorphous semiconductor film is provided on a crystalline semiconductor film is etched using a mixed gas of a Br-based gas, a F-based gas, and an oxygen gas, so that part of the crystalline semiconductor film provided in the stacked semiconductor film is exposed. Reduction in the film thickness of the exposed portion can be suppressed by performing the etching in such a manner. Moreover, when etching for forming a back channel portion of a thin film transistor is performed with the method for etching, favorable electric characteristics of the thin film transistor can be obtained. An insulating layer is preferably provided over the thin film transistor.

Abstract: A display device includes a thin film transistor and a wiring layer. The thin film transistor including a control electrode, a semiconductor layer facing the control electrode, a first electrode electrically connected to the semiconductor layer, and a second electrode including a metal film having resistance lower than that of the light transmissive material. The second electrode is electrically connected to each of the semiconductor layer and the wiring layer. A difference in ionization tendency between a material configuring the metal film and a conductive material configuring a part or whole of the wiring layer is smaller than a difference in ionization tendency between the light transmissive material and the conductive material.

Abstract: An array substrate and a display panel are disclosed. The array substrate includes at least one data line, at least one scanning line, and a pixel cell defined by the data line and the scanning line. The pixel cell includes an ITO thin film and at least one metallic layer below the ITO thin film. The ITO thin film electrically connects to the metallic layer via a through hole. The ITO thin film includes a slit arranged between the ITO thin film and the through hole, and the slit is arranged to avoid the disclination lines so as to improve the display performance.

Abstract: Provided is a semiconductor device that includes: a transistor; an oxide semiconductor film; a first conductive film electrically connected to the oxide semiconductor film; and a first insulating film provided between the first conductive film and the oxide semiconductor film.

Abstract: A thin film transistor array panel includes a substrate, a gate line extending in a first direction on the substrate, a data line extending in a second direction on the substrate and intersecting the gate line, a thin film transistor connected to the gate line and the data line, an insulating layer on the gate line, the data line, and the thin film transistor, a first auxiliary line on the insulating layer and connected to the gate line, a second auxiliary line on the insulating layer and connected to the data line, and a pixel electrode connected to the thin film transistor.

Abstract: A display substrate includes a gate metal pattern including a gate line disposed on a base substrate and a gate electrode electrically connected with the gate line, an active pattern entirely overlapped with the gate metal pattern and comprising an oxide semiconductor and a data metal pattern disposed on the active pattern and including a data line, a source electrode electrically connected with the gate line and a drain electrode spaced apart from the source electrode. The active pattern has an overlapped region in which the active pattern is overlapped with the source electrode and the drain electrode and an exposed region in which the active pattern is not overlapped with the source electrode and the drain electrode. The thickness of the overlapping region and a thickness of the exposing region are same.

Abstract: An array substrate, a method of fabricating the same, and a liquid crystal display device are disclosed. The method comprises: sequentially forming a first transparent conductive material layer, an insulation material layer, a semiconductor material layer and a photoresist layer on a substrate base and forming patterns including a gate line, a gate, a gate insulation layer, a semiconductor layer and a first transparent electrode by patterning process; forming a passivation layer and forming a source via and a drain via connected to the semiconductor layer in the passivation layer; sequentially forming a second transparent conductive material layer and a source-drain metal layer and forming patterns including a source, a drain and a second transparent electrode by patterning process, the gate insulation layer is formed only on the gate and the gate line, the source and the drain include stacked second transparent conductive material layer and source-drain metal layer.

Abstract: The liquid crystal display device performs display by changing the number of gray scales depending on external light intensity, and switches the display mode in accordance with a content to be displayed on a display. By controlling a display mode-specific video signal generation circuit depending on external light intensity, an inputted video signal is outputted as an analog value, is outputted with a digital value of a binary, or is outputted with a multiple digital value. As a result, display gradation of a pixel changes timely. Accordingly, a clear image can be displayed. For example, a display device which secures visibility can be obtained in a wide range from under fluorescent light in a dark place or indoor to under outdoor sunlight.

Abstract: According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.

Abstract: A donor substrate includes a base layer, a light-to-heat conversion layer disposed on the base layer, a buffer layer disposed on the light-to-heat conversion layer and a transfer layer disposed on the buffer layer. The buffer layer includes a cross-linked polymer, a spacer polymer bonded to the cross-linked polymer, and a perfluoroalkyl alcohol group bonded to the spacer polymer.

Abstract: An aluminum oxide ceramic is formed into a sapphire component for an electronic device. Indicia are embedded into at least one major surface of the component, for example by ion implantation, where ions are fixed into a subsurface pattern layer. The subsurface pattern layer defines the indicia by altering an optical or chromatic property of the aluminum oxide material, so that the indicia are visible from an external surface of the component.

Abstract: A thin-film transistor includes: a gate electrode above a substrate; a gate insulating layer above the gate electrode; a semiconductor layer opposed to the gate electrode with the gate insulating layer therebetween; a protective layer above the semiconductor layer and comprising an organic material; and a source electrode and a drain electrode each of which has at least a portion located above the protective layer. The protective layer includes an altered layer which has at least a portion contacting the semiconductor layer, and which is generated by alteration of a surface layer of the protective layer in a region exposed from the source electrode and the drain electrode. A relational expression of Log10 Nt?0.0556?+16.86 is satisfied where Nt (cm?3) represents a defect density of the semiconductor layer and ? (°) represents a taper angle of an edge portion of the protective layer.

Abstract: A semiconductor memory device has a cover film (5), between a memory cell (gate electrode 4, and source and drain regions 2a and 2b) and an interlayer insulating film (6), the cover film covering the memory cell, wherein the cover film (5) has a hydrogen storage film (5a) that is a coating film on a surface of a silicon nitride film (5b), and in addition, has a hydrogen storage film (5c) on a bottom surface of the silicon nitride film (5b). The hydrogen storage films (5a and 5b) are silicon nitride oxide films that include Si2N2O. By suppressing diffusion of hydrogen atoms to a memory cell from an interlayer insulating film, reliability of operation of the memory cell is improved.

Abstract: A liquid crystal display device with a pair of substrates which are arranged to face each other with liquid crystal therebetween, columnar spacers having the substantially equal height formed on a liquid-crystal-side surface of one substrate, and the columnar spacers include the columnar spacer which is contact with a liquid-crystal-side surface of another substrate and the columnar spacer which is not contact with the liquid-crystal-side surface of another substrate.

Abstract: An array substrate includes a substrate; an oxide semiconductor layer on the substrate, the oxide semiconductor layer including an active area and source and drain areas at both sides of the active area; a gate insulating layer and a gate electrode sequentially on the active area of the oxide semiconductor layer; an inter insulating layer on the gate electrode and having first and second semiconductor contact holes that expose the source and drain areas respectively; and source and drain electrodes on the inter insulating layer and contacting the source and drain areas through the first and second semiconductor contact holes, respectively, wherein the first and second semiconductor contact holes are disposed in two regions.

Abstract: Embodiments of the present application provide an array substrate and a method for fabricating the same. The array substrate comprises: a base substrate, a plurality of thin film transistors formed on the base substrate; the array substrate also comprising: a buffer layer formed on the substrate between the substrate and the film transistors; wherein, the buffer layer is a metal oxide film layer. Embodiments of the present application also provide a display device having such array substrate.

Abstract: Embodiments of radiographic imaging systems; radiography detectors and methods for using the same; and/or fabrication methods therefore can include radiographic imaging array that can include a plurality of pixels that each include a photoelectric conversion element coupled to a thin-film switching element. In certain exemplary embodiments, thin-film switching element is a metal oxide (e.g., a-IGZO) TFT manufactured using a reduce photolithography mask counts. In certain exemplary embodiments, the thin-film switching element is a metal oxide (e.g., a-IGZO) TFT that includes reduced lower alignment tolerances between TFT electrodes. In certain exemplary embodiments, the thin-film switching element is a metal oxide (e.g., a-IGZO) TFT including a reduced thickness active layer.

Abstract: An embodiment of the present invention is a microcrystalline semiconductor film having a thickness of more than or equal to 70 nm and less than or equal to 100 nm and including a crystal grain partly projecting from a surface of the microcrystalline semiconductor film. The crystal grain has an orientation plane and includes a crystallite having a size of 13 nm or more. Further, the film density of the microcrystalline semiconductor film is higher than or equal to 2.25 g/cm3 and lower than or equal to 2.35 g/cm3, preferably higher than or equal to 2.30 g/cm3 and lower than or equal to 2.33 g/cm3.

Abstract: A manufacturing method of a liquid crystal display includes: providing a lower mother substrate including a plurality of lower panels including thin film transistors and coated with a lower alignment layer, providing an upper mother substrate including a plurality of upper panels respectively corresponding to the plurality of lower panels and coated with an upper alignment layer, forming a mother substrate assembly by forming a liquid crystal mixture layer including a liquid crystal between the lower mother substrate and the upper mother substrate and combining the lower mother substrate and the upper mother substrate, dividing each upper panel into a first region, a second region, and a third region by forming three cutting lines for each upper panel at the upper mother substrate of the mother substrate assembly; applying a voltage to the first region and the third region of the upper mother substrate that is not covered by the lower mother substrate and exposed to pretilt the liquid crystal, and irradiating

Abstract: A method for fabricating a liquid crystal display device including a TFT substrate having an alignment film formed thereon, an opposing substrate, and a liquid crystal layer sandwiched therebetween. The alignment film on the TFT substrate includes a photolytic polymer made from a first precursor including cyclobutane, and a non-photolytic polymer made from a second precursor. The method includes the steps of depositing a mixture material including the first precursor and the second precursor in which the second precursor settles more on an upper surface of the TFT substrate than the first precursor, imidizing the mixture material, and irradiating the mixture material with ultraviolet light for photo-alignment, and after irradiating, heating the mixture material to form the alignment film.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.