Abstract: A method of manufacturing a thin film transistor array substrate includes providing a plurality of gate lines and a plurality of data lines on a first substrate, providing an organic layer on the gate lines and the data lines, providing a first electrode on the organic layer, providing a passivation layer on the first electrode, providing a second electrode on the passivation layer, providing a first cover layer on the second electrode to cover the second electrode, providing a plurality of photosensitive layer patterns on the first cover layer, providing a plurality of first cutout patterns in the first cover layer and a plurality of second cutout patterns in the second electrode using the photosensitive layer patterns as an etch mask, and providing a plurality of third cutout patterns in the passivation layer using the first cover layer as an etch mask.

Abstract: A semiconductor structure includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric stacked layer. The oxide channel layer is stacked over the gate, with the gate insulting layer disposed therebetween. The source and the drain are disposed on a side of the oxide channel layer and in parallel to each other. A portion of the oxide channel layer is exposed between the source and the drain. The dielectric stacked layer is disposed on the substrate and includes plural of first inorganic dielectric layers with a first refraction index and plural of second inorganic dielectric layers with a second refraction index that are stacked alternately. At least one of the first inorganic dielectric layers directly covers the source, the drain and the portion of the oxide channel layer. The first refraction index is smaller than the second refraction index.

Abstract: According to one embodiment, a display device includes a main substrate, and a light control layer. The main substrate includes a main base having a main surface, a wavelength selective transmission layer provided on the main surface, and a circuit layer provided on the wavelength selective transmission layer. The light control layer is stacked with the main substrate and has variable optical characteristics. The wavelength selective transmission layer includes lower and upper reflecting layers, and first and second spacer layers. The upper reflecting layer is provided on the lower reflecting layer. The first spacer layer is provided between the lower and upper reflecting layers. The second spacer layer is provided between the lower and upper reflecting layers, and has a different thickness from the first spacer layer. The circuit layer includes first and second pixel electrodes, and first and second switching elements.

Abstract: A liquid crystal display device includes a TFT substrate and a counter substrate on each of which an alignment film is formed and a liquid crystal interposed and held between the alignment films of the TFT and counter substrate, wherein the alignment film is made of a material capable of applying liquid crystal alignment regulation force by polarized light irradiation, a convex structure is formed on the TFT substrate or the counter substrate, and the alignment film is applied the liquid crystal alignment regulation force to a surface of a region ranging from the periphery of the convex structure to the vicinity of an inclined part of the convex structure and is not applied the liquid crystal alignment regulation force to a surface of the inclined part of the convex structure.

Abstract: A liquid crystal display includes a thin film transistor on a substrate, a pixel electrode connected to a first terminal of the thin film transistor, a roof layer above the pixel electrode, a microcavity between the pixel electrode and the roof layer, the microcavity including a liquid crystal injection hole, a partition wall in the microcavity, the partition wall partitioning the microcavity into a first area and a second area, and a liquid crystal layer with liquid crystal molecules in the microcavity, the liquid crystal molecules in the first area being a different type than the liquid crystal molecules in the second area.

Abstract: A display device includes a substrate including a plurality of pixel areas, a thin film transistor positioned on the substrate, a first insulating layer positioned on the thin film transistor, a pixel electrode connected with the thin film transistor and positioned on the first insulating layer, a common electrode positioned on the pixel electrode and spaced apart from the pixel electrode by a microcavity, a second insulating layer positioned on the common electrode, a roof layer positioned on the second insulating layer, a thickness of the roof layer being about 4 ?m to about 50 ?m, an injection hole through the common electrode, the second insulating layer, and the roof layer, the injection hole exposing a part of the microcavity, a liquid crystal layer filling the microcavity, and an overcoat on the roof layer and extending into the injection hole, the overcoat sealing the microcavity.

Abstract: A method of manufacturing an array substrate for an FFS mode LCD device includes forming a gate line, a gate electrode and a pixel electrode on a substrate; forming a gate insulating layer; forming a data line, source and drain electrodes, and a semiconductor layer on the gate insulating layer, the drain electrode overlapping the pixel electrode; forming a passivation layer on the data line, the source and drain electrodes; forming a contact hole exposing the drain electrode and the pixel electrode by patterning the passivation layer and the gate insulating layer; and forming a common electrode and a connection pattern on the passivation layer, wherein the common electrode includes bar-shaped openings and a hole corresponding to the contact hole, and the connection pattern is disposed in the hole, is spaced apart from the common electrode and contacts the drain electrode and the pixel.

Abstract: A method of applying a conversion means to an optoelectronic semiconductor chip includes preparing the optoelectronic semiconductor chip having a main radiation face, preparing the conversion means, the conversion means being applied to a main carrier face of a carrier, arranging the conversion means such that it faces the main radiation face and has a spacing relative to the main radiation face, and releasing the conversion means from the carrier and applying the conversion means to the main radiation face by irradiation and heating of an absorber constituent of the conversion means and/or of a release layer located between the conversion means and the carrier with a pulsed laser radiation which passes through the carrier.

Abstract: A light source unit includes a light source configured to emit a light, a first case including a first groove configured to receive the light source therein, a first sealing member disposed in the first groove and covering the light source, a second case disposed on the first case and including a first opening portion overlapping with the first groove, and a quantum dot member disposed between the first case and the second case and including a light conversion area configured to convert the light to a white light and a defect area surrounding the light conversion area. The first opening portion is disposed through the second case, a portion of the light conversion area overlaps with the first opening portion and the first groove, and the light source unit is configured such that the white light exits therefrom through the first opening portion.

Abstract: A display device includes a light source generating light and a thin film transistor array panel including a pixel electrode and a common electrode. The display includes an upper panel and a quantum rod layer positioned between the thin film transistor array panel and the upper panel. The display includes an upper polarizer attached outside of the upper panel, in which the quantum rod layer includes quantum rods, and an arrangement direction of the quantum rods is controlled by an electric field generated by the pixel electrode and the common electrode, light is polarized according to the controlled arrangement direction, and the polarizer controls the transmission degree of the polarized light from the quantum rods according to the arrangement direction of the quantum rods.

Abstract: A method for fabricating a liquid crystal display device including a TFT substrate having an alignment film formed thereon, an opposing substrate, and a liquid crystal layer sandwiched therebetween. The alignment film on the TFT substrate includes a photolytic polymer made from a first precursor including cyclobutane, and a non-photolytic polymer made from a second precursor. The method includes the steps of depositing a mixture material including the first precursor and the second precursor in which the second precursor settles more on an upper surface of the TFT substrate than the first precursor, imidizing the mixture material, and irradiating the mixture material with ultraviolet light for photo-alignment, and after irradiating, heating the mixture material to form the alignment film.

Abstract: An array substrate for a liquid crystal display (LCD) and manufacturing method thereof are provided. The array substrate for a liquid crystal display (LCD) includes: a substrate, including: a gate electrode, a pixel electrode, and a common electrode, a gate pad formed on the substrate, and connected to the gate electrode, a gate insulating layer formed on the gate pad, a first protective layer formed on the gate insulating layer, a second protective layer formed on the first protective layer, a first metal layer formed on the second protective layer, and connected to the gate pad through a first contact hole which exposes the gate pad, a third protective layer formed on the first metal layer and the second protective layer, and a second metal layer formed on the third protective layer, and connected to the first metal layer through a second contact hole which exposes the first metal layer.

Abstract: The present invention relates to a light-emitting diode (LED) and a method for manufacturing the same. The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.

Abstract: A method of manufacturing an array substrate for a fringe field switching mode liquid crystal display includes: forming an auxiliary insulating layer on a second passivation layer and having a first thickness; forming first and second photoresist patterns on the auxiliary insulating layer and having second and third thicknesses, respectively, the second thickness greater than the third thickness; etching the auxiliary insulating layer, the second passivation layer and a first passivation layer to form a drain contact hole; performing an ashing to remove the second photoresist pattern and expose the auxiliary insulating layer therebelow; performing a dry etching to remove the auxiliary insulating layer not covered by the first photoresist pattern and expose the first passivation layer and to form an insulating pattern below the first photoresist pattern, the insulating pattern and the first photoresist pattern forming an undercut shape; forming a transparent conductive material layer having a fourth thickness

Abstract: A liquid crystal cell is disclosed. The cell includes a first substrate, and a first overcoat layer. The first substrate includes first and second regions. The cell also includes a barrier layer on the first overcoat layer in the first region, a second substrate bonded with the first substrate, and a first spacer on the second substrate, where the first spacer is aligned with the first region. The cell also includes a second spacer on the second substrate facing the first substrate, where the second spacer aligns with the second region, and the length of the first spacer is greater than or equal to the length of the second spacer. The cell also includes a liquid crystal layer between the first and second substrates, where the area of a lower surface of the barrier layer is greater than the area of a lower surface of the first spacer.

Abstract: A display device having a touch sensor and a manufacturing method thereof. The display device includes a pixel defining layer, first electrodes, an emissive layer, second electrodes, and an insulating layer. The first electrodes are exposed and arranged through the pixel defining layer. The emissive layer is formed on each first electrode. Each second electrode is connected to the emissive layer, and the second electrodes are arranged to be spaced apart from each other. The insulating pattern is formed on the pixel defining layer exposed between adjacent second electrodes.

Abstract: A curved display device includes a thin film transistor display unit including a first insulation substrate; a common electrode display unit disposed opposite to the thin film transistor display unit and including a second insulation substrate; a liquid crystal layer disposed between the thin film transistor display unit and the common electrode display unit; and a plurality of color filters disposed on the first insulation substrate or the second insulation substrate, where each color filter includes an overlapping compensation region, which overlaps an adjacent color filter, and a non-overlapping region, which does not overlap the adjacent color filter, the overlapping compensation region defines a stepped region having a step height with the non-overlapping region.

Abstract: A liquid crystal display device is fabricated by forming a first alignment layer on a first base substrate. A second alignment layer is formed on a second base substrate. A liquid crystal is disposed on one of the first alignment layer and the second alignment layer. The first base substrate and the second base substrate are combined. At least one of the first alignment layer and the second alignment layer is formed by forming an alignment solution on a corresponding base substrate. An alignment layer is formed by curing the alignment solution. The alignment layer is aligned by radiating a light onto the base substrate, first cleaning the base substrate, and baking the alignment layer.

Abstract: Disclosed are a light emitting apparatus and a lighting system. The light emitting apparatus includes a body, a first electrode having a protrusion pattern on the body, a second electrode electrically separated from the first electrode on the body, an adhesive layer on the first electrode including the protrusion pattern, and a light emitting device on the adhesive layer.

Abstract: A display panel includes a substrate including a plurality of thin-film transistors thereon, a plurality of gate lines respectively connected to a thin film transistor and disposed on the substrate, a color filter layer disposed on the substrate and the gate lines, a black matrix disposed on the color filter and overlapped with the gate lines, and a hole defined in the black matrix and exposing the color filter layer, a first electrode disposed on the color filter and electrically connected to the thin-film transistor and an image displaying layer disposed on the first electrode.

Abstract: A display panel includes a display substrate and a reflection prevention pattern. The display substrate includes a first substrate, a plurality of signal lines on an inner surface of the first substrate, and a plurality of pixels coupled to corresponding ones of the signal lines. The reflection prevention pattern is on an outer surface of the first substrate and overlaps the signal lines.

Abstract: An ink containing an electroluminescent light emitting material is discharged onto a buffer layer. The discharge amount of the ink is larger than a maximum volume where the ink is retained by the surface tension thereof on the top surface of the buffer layer.

Abstract: A method includes: a step of forming a gate electrode (14) on a substrate (10a); a step of forming a gate insulating film (15) to cover the gate electrode (14), and then forming an In-Ga-Zn-O-based oxide semiconductor layer (16) in which a ratio of In:Ga:Zn in atomic % is 1:1:1 or 4:5:1 on the gate insulating film (15) to overlap the gate electrode (14); a step of forming a source electrode (19a) and a drain electrode (19b) on the oxide semiconductor layer (16) to overlap the gate electrode (14) and to face each other; and a step of performing an annealing process in an atmosphere containing steam (S) on the substrate (10a) provided with the source electrode (19a) and the drain electrode (19b).

Abstract: A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.

Abstract: A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.

Abstract: A liquid crystal display device includes a first substrate and a second substrate with a liquid crystal layer therebetween. The first substrate includes drain lines, gate lines, thin-film transistors that output signals to pixel electrodes, and an organic film that is formed between each thin-film transistor and each pixel electrode. The organic film has a contact hole for electrical connection between a source electrode of each thin-film transistor and each pixel electrode. A step is formed in a layer underlying the organic film and an edge portion of the organic film toward the thin-film transistor, the edge portion forming the contact hole, being formed to lie on a lower plane of the step. A sidewall part of the contact hole which is formed in the organic film is formed to have a taper angle of at least 60 degrees.

Abstract: A display device includes: a substrate including a plurality of pixel areas; a thin film transistor formed on the substrate; a pixel electrode connected to the thin film transistor and formed in at least one of the plurality of pixel areas; a roof layer formed on the pixel electrode to be spaced apart from the pixel electrode by a microcavity therebetween; an injection hole formed on the roof layer so as to expose a part of the microcavity; a liquid crystal layer configured to fill the microcavity; at least one support member adjacent to the injection hole and formed in a column shape in the microcavity; and an encapsulation layer formed on the roof layer so as to cover the injection hole to seal the microcavity.

Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer, an electrode electrically connected to the first conductive semiconductor layer, a reflective layer under the second conductive semiconductor layer, a protective layer disposed around a lower surface of the second conductive semiconductor layer, and a buffer layer disposed on at least one of top and lower surfaces of the protective layer.

Abstract: Disclosed are a liquid crystal display (LCD) device and a method of manufacturing the same, which can increase a transmittance of a high-resolution pixel. The LCD device includes a gate line formed to be shared by vertically adjacent first and second pixels, a data line formed to interest the gate line, first and second thin film transistors (TFTs) respectively formed in the first and second pixels, a passivation layer formed to cover the first and second TFTs, including a contact hole that exposes drains of the first and second TFTs, first and second pixel electrodes formed on the passivation layer and in the contact hole, and respectively connected to the drains of the first and second TFTs, and a common electrode formed under or on the first and second pixel electrodes.

Abstract: The present invention provides a liquid crystal display device in which even in the case of using a photo-alignment technique, excellent afterimage characteristics can be stably obtained. Provided is a liquid crystal display device including a TFT substrate having an alignment film, an opposed substrate which is arranged to face the TFT substrate and on which an alignment film is formed, and a liquid crystal layer sandwiched between the alignment films, wherein the alignment films are materials that can provide a liquid crystal alignment restraining force by irradiating polarized light, and the ratio of oxygen atoms on the surface of the alignment film is higher than that in the alignment film.

Abstract: The number of photomasks is reduced in a method for manufacturing a liquid crystal display device which operates in a fringe field switching mode, whereby a manufacturing process is simplified and manufacturing cost is reduced. A first transparent conductive film and a first metal film are sequentially stacked over a light-transmitting insulating substrate; the first transparent conductive film and the first metal film are shaped using a multi-tone mask which is a first photomask; an insulating film, a first semiconductor film, a second semiconductor film, and a second metal film are sequentially stacked; the second metal film and the second semiconductor film are shaped using a multi-tone mask which is a second photomask; a protective film is formed; the protective film is shaped using a third photomask; a second transparent conductive film is formed; and the second transparent conductive film is shaped using a fourth photomask.

Abstract: An object of the present invention is to provide a small-sized active matrix type liquid crystal display device that may achieve large-sized display, high precision, high resolution and multi-gray scales. According to the present invention, gray scale display is performed by combining time ratio gray scale and voltage gray scale in a liquid crystal display device which performs display in OCB mode. In doing so, one frame is divided into subframes corresponding to the number of bit for the time ratio gray scale. Initialize voltage is applied onto the liquid crystal upon display of a subframe.

Abstract: Provided is a liquid crystal display device including: gate lines formed in a first direction on a second transparent substrate; data lines formed in a second direction; first transparent common electrodes; a protective insulating film; transparent pixel electrodes arranged in the first direction and the second direction and formed so as to be opposed to the first transparent common electrodes on a surface of the protective insulating film; thin film transistors connected to the transparent pixel electrodes; a second transparent common electrode formed on the surface of the protective insulating film; and a liquid crystal layer formed on the protective insulating film, the transparent pixel electrodes, and the second transparent common electrode. The second transparent common electrode covers the gate lines and the data lines through intermediation of the protective insulating film.

Abstract: Semiconductor alloy fin structures can be formed by recessing a semiconductor material layer including a first semiconductor material to form a trench, and epitaxially depositing a semiconductor alloy material of the first semiconductor material and a second semiconductor material within the trench. The semiconductor alloy material is epitaxially aligned to the first semiconductor material in the semiconductor material layer. First semiconductor fins including the first semiconductor material and second semiconductor fins including the semiconductor alloy material can be simultaneously formed. In one embodiment, the first and second semiconductor fins can be formed on an insulator layer, which prevents diffusion of the second semiconductor material to the first semiconductor fins. In another embodiment, shallow trench isolation structures and reverse biased wells can be employed to provide electrical insulation among neighboring semiconductor fins.

Abstract: An object of the present invention is to provide an EL display device having high operation performance and reliability. A third passivation film 45 is disposed under the EL element 203 comprising a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, and diffusion of alkali metals from the EL element 203 formed by ink jet method into TFTs is prevented. Further, the third passivation film 45 prevents penetration of moisture and oxygen from the TFTs, and suppress degradation of the EL element 203 by dispersing the heat generated by the EL element 203.

Abstract: Embodiments of the present invention provide a method for manufacturing a transistor, a transistor, an array substrate and a display device. The method comprises: forming a first source/drain metal layer on a substrate; forming an insulating layer above the first source/drain metal layer; forming a gate metal layer on the insulating layer; forming a gate insulating layer on the gate metal layer; forming a semiconductor layer above the gate insulating layer; forming an etching blocking layer on the semiconductor layer; forming a second source/drain metal layer above the etching blocking layer; forming an insulating layer above the second source/drain metal layer.

Abstract: A liquid crystal display device is disclosed. The liquid crystal display device includes: a substrate; gate and data lines arranged to cross each other on the substrate and to define a pixel region; a switching element disposed at an intersection of the gate and data lines; and pixel electrodes and common electrodes arranged alternately with each other and parallel to the data line, within the pixel region. The pixel electrode and the common electrode are formed to have a stacked layer structure of a transparent conductive material layer and an opaque metal layer, each having a line-width of 3.5 ?m or less. Such a liquid crystal display device can enhance the transmittance of a pixel region with preventing the chuck stain by forming electrodes in a double layer structure with a transparent conductive material layer and an opaque metal layer.

Abstract: A display apparatus and a method of manufacturing a display apparatus are disclosed. A display may include a base substrate, a plurality of pixel rows each of which includes a plurality of pixels arranged both in a first direction and in a second direction, a sealant layer covering the pixel rows, and a trench disposed between the pixel rows. Each pixel row may include a plurality of active cavities arranged along the trench and a drain cavity disposed on at least one end of the trench. A capillary force decreases along the active cavities, the drain cavity, and the trench.

Abstract: A liquid crystal display is disclosed. The liquid crystal display may include an insulation substrate a pixel electrode formed on the insulation substrate a lower alignment layer formed on the pixel electrode and includes an inorganic alignment layer formed of an inorganic insulating material, a liquid crystal layer disposed in a microcavity formed on the lower alignment layer, an upper alignment layer formed along a side and an upper surface of the microcavity and includes an inorganic alignment layer formed of an inorganic insulating material, and a common electrode formed on the upper alignment layer. The upper alignment layer and the lower alignment layer enclose the liquid crystal layer. A method of manufacturing a liquid crystal display is also disclosed.

Abstract: A thin film deposition apparatus, a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus, and an organic light-emitting display device manufactured using the method.

Abstract: Embodiments of the disclosed technology provide a transflective transistor thin film array substrate and a method for manufacturing the same. The transflective thin film transistor array substrate, comprising pixel units defined by gate lines and data lines, and each pixel unit comprises a thin film transistor and a common electrode and is divided into a reflective region and a transmissive region. The reflective region comprises a reflective electrode and a second pixel electrode of the reflective region, the transmissive region comprises first and second pixel electrodes of the transmissive region, and the second pixel electrode of the reflective region and the first and second pixel electrodes of the transmissive region are provided in one pixel electrode layer.

Abstract: A liquid crystal display device includes a first substrate, a second substrate facing the first substrate, a liquid crystal layer disposed between the first and second substrates, a pixel electrode, a common electrode facing the pixel electrode, a plurality of first touch electrodes, and a plurality of second touch electrodes. Each first touch electrode includes a main body portion extending in a first direction and a plurality of branching portions extending from the main body portion in a second direction. The plurality of second touch electrodes cross the main body portion of each first touch electrode.

Abstract: A method of manufacturing oxide thin film transistor and display device are provided. In the method of manufacturing an oxide thin film transistor, the method includes: forming an active layer of an oxide semiconductor on a substrate, and performing surface treatment with plasma for the active layer to permeate oxygen into the active layer.

Abstract: A device for monitoring a liquid crystal display includes: a substrate including a display region and a non-display region disposed at an edge of the display region. The display region includes: a thin film transistor disposed on the substrate, a pixel electrode disposed on the substrate and connected to the thin film transistor, a first sacrificial layer disposed on the pixel electrode, and a roof layer disposed on the sacrificial layer. The non-display region includes: a second sacrificial layer disposed on the substrate, and the roof layer disposed on the second sacrificial layer. The first sacrificial layer has a first longitudinal dimension and a first cross-sectional area, and the second sacrificial layer has a second longitudinal dimension and a second cross-sectional area. The first cross-sectional area is the same as the second cross-sectional area. The second longitudinal dimension is greater than the first longitudinal dimension.

Abstract: Provided is a liquid crystal display including: a first substrate; a thin film transistor disposed on the first substrate; a passivation layer disposed on the thin film transistor and comprising a contact hole exposing an electrode of the thin film transistor; a pixel electrode disposed on the passivation layer and connected to the electrode of the thin film transistor through the contact hole; a lower buffer layer disposed on the pixel electrode; a lower alignment layer disposed on the lower buffer layer; a second substrate facing the first substrate; a common electrode disposed on the second substrate; an upper buffer layer disposed on the common electrode; and an upper alignment layer disposed on the upper buffer layer, in which the lower buffer layer comprises parylene, the upper buffer layer comprises parylene, or both the lower and the upper buffer layers comprise parylene.

Abstract: A method for fabricating a liquid crystal (LC) device and large area LC devices is provided. The method includes forming a LC layer and forming a coated silicon wafer on at least one surface of the LC layer. The coated silicon wafer includes a sacrificial layer for providing structural strength during fabrication of the LC device and a thin coating layer serving as an external light transmissive layer, and the coated silicon wafer is formed such that the thin coating layer is formed on the LC layer and the sacrificial layer is formed on the thin coating layer. The method also includes fabricating the LC device and selectively removing at least a portion of the sacrificial layer of the coated silicon wafer to expose at least a portion of the thin coating layer to serve as an external layer of the LC device.

Abstract: Provided are a display device and a manufacturing method thereof capable of preventing deformation of a microcavity and stably injecting an aligning agent and a liquid crystal. The display device includes a substrate including a plurality of pixel areas which includes a plurality of pixel columns and is disposed in a matrix form; a thin film transistor formed on the substrate; a pixel electrode connected to the thin film transistor and formed in the pixel area; a roof layer formed on the pixel electrode so as to be spaced apart from the pixel electrode with a microcavity therebetween; a first injection hole formed in the roof layer exposing the microcavity at a side edge of the pixel column; a liquid crystal layer filling the microcavity; and an encapsulation layer formed on the roof layer so as to cover the first injection hole to seal the microcavity.

Abstract: Methods of fabricating optoelectronic devices, such as photovoltaic cells and light-emitting devices. In one embodiment, such a method includes providing a substrate, applying a monolayer of semiconductor particles to the substrate, and encasing the monolayer with one or more coatings so as to form an encased-particle layer. At some point during the method, the substrate is removed so as to expose the reverse side of the encased-particle layer and further processing is performed on the reverse side. When a device made using such a method has been completed and installed into an electrical circuit the semiconductor particles actively participate in the photoelectric effect or generation of light, depending on the type of device.

Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, masking portions of each fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.

Abstract: A display device includes: a substrate, on which pixel areas arranged substantially in a matrix form having pixel rows and pixel columns are defined; a thin film transistor disposed on the substrate; a pixel electrode disposed in the pixel areas and connected to the thin film transistor; common electrodes disposed on the pixel electrode and spaced apart from the pixel electrode, where a microcavity is defined between the pixel electrode and the common electrodes; a roof layer disposed on the common electrodes, where a liquid crystal injection hole is defined through the common electrodes and the roof layer and exposes the microcavity; a liquid crystal layer disposed in the microcavity; and an encapsulation layer disposed on the roof layer, where the encapsulation layer covers the liquid crystal injection hole and seals the microcavity, where the common electrodes in the pixel rows are connected to each other.