Abstract: An unsubstituted or substituted phosphorescent compound of formula (I): Wherein: M is a transition metal; L in each occurrence is independently a mono- or poly-dentate ligand; R8 is H or a substituent; R9 and R10 are each independently selected from the group consisting of branched, linear or cyclic C1-20 alkyl wherein non-adjacent C atoms of the C1-20 alkyl may be replaced with —O—, —S—, —NR12—, —SiR122— or —COO— and one or more H atoms may be replaced with F or —NR122, wherein R12 is H or a substituent; R11 in each occurrence is independently H or a substituent, wherein two groups R11 may be linked to form a ring; x is at least 1; y is 0 or a positive integer; and z1, z2 and z3 are each independently 0 or a positive integer.

Abstract: Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

Abstract: A film 3 of a nitride of a group 13 element is grown on a seed crystal substrate 11 by flux process from a melt containing a flux and the group 13 element under nitrogen containing atmosphere. The film 3 of the nitride of the group 13 element includes an inclusion distributed layer 3a in a region distant from an interface 11a of the film 3 of the nitride of the group 13 element on the side of the seed crystal substrate 11 and containing inclusions derived from components of the melt, and an inclusion depleted layer 3b, with the inclusion depleted. provided on the layer 3a. Laser light A is irradiated from the side of the back face 1b of the seed crystal substrate 11 to peel the single crystal 3 of the nitride of the group 13 element from the seed crystal substrate 11 by laser lift-off method.

Abstract: A method of fabricating an organic light emitting diode display device includes forming a first electrode over a substrate including a display region, which includes a plurality of pixel regions, the first electrode formed in each of the plurality of pixel regions; forming a first bank and a second bank, the first bank formed on edges of the first electrode and having a first width and a first thickness, and the second bank formed on the first bank and having a second width smaller than the first width; forming an organic emitting layer on the first electrode and a portion of the first bank; and forming a second electrode on the organic emitting layer and covering an entire of the display region.

Abstract: A mask strip for manufacturing an organic light emitting diode (OLED) display is disclosed. In one aspect, the mask strip is extended in a length direction and fixed to a frame. The frame includes a plurality of masking pattern units arranged in a matrix format in which an opening pattern includes a plurality of rows that are substantially parallel to a width direction crossing the length direction and a plurality of columns that are substantially parallel to the length direction. The rows respectively have a curvature which is concave toward an inside of the masking pattern unit, and the columns respectively have a curvature which is convex toward an outside of the masking pattern unit.

Abstract: The present invention belongs to the technical field of transparent conductive films and provides a graphene derivative, a transparent conductive film and an organic electroluminescent (EL) device. Methods are also provided for preparation of the graphene derivative and for preparation of an anode of the organic EL device. The graphene derivative exhibits a lower evaporation temperature and a higher work function.

Abstract: There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

Abstract: Novel organic compounds containing an imidazole core and electron donor and acceptor fragments are provided. By selection of the disclosed donor and acceptor groups, compounds exhibiting small singlet-triplet gaps are obtained. These compounds are useful in OLED devices as host materials or as delayed fluorescent emitters.

Abstract: A method of depositing semiconductor nanocrystals on a surface can include applying a voltage to the nanocrystals.

Abstract: An organic EL element including anode, hole injection layer, buffer layer, light-emitting layer, and cathode, layered on substrate in the stated order, and banks defining a light-emission region, and having excellent light-emission characteristics, due to the hole injection layer having excellent hole injection efficiency, being a tungsten oxide layer including an oxygen vacancy structure, formed under predetermined conditions to have an occupied energy level within a binding energy range from 1.8 eV to 3.6 eV lower than a lowest binding energy of a valence band, and after formation, subjected to atmospheric firing at a temperature within 200° C.-230° C. inclusive for a processing time of 15-45 minutes inclusive to have increased film density and improved dissolution resistance against an etching solution, a cleaning liquid, etc., used in a bank forming process.

Abstract: Method for manufacturing organic EL element including anode, hole injection layer, buffer layer, light-emitting layer, and cathode, layered on substrate in the stated order, and banks defining a light-emission region, and having excellent light-emission characteristics, due to the hole injection layer having excellent hole injection efficiency, being a tungsten oxide layer including an oxygen vacancy structure, formed under predetermined conditions to have an occupied energy level within a binding energy range from 1.8 eV to 3.6 eV lower than a lowest binding energy of a valence band, and after formation, subjected to atmospheric firing at a temperature within 200° C.-230° C. inclusive for a processing time of 15-45 minutes inclusive to have increased film density and improved dissolution resistance against an etching solution, a cleaning liquid, etc., used in a bank forming process.

Abstract: Novel compounds containing benzothiophene or benzofuran fused to a carbazoles moiety are disclosed. The compounds are substituted such that both an electron donor fragment and an electron acceptor fragment are present within the same molecule. The compounds are capable of exhibiting delayed fluorescence when used in the emissive layer of OLED devices.

Abstract: There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.

Abstract: Disclosed is a method of manufacturing a ZnO-based semiconductor device having at least p-type ZnO-based semiconductor layer, which includes a step of forming a contact metal layer on the p-type ZnO-based semiconductor layer wherein the contact metal layer contains at least one of Ni and Cu; and a step of performing heat treatment of the contact metal layer and the p-type ZnO-based semiconductor layer under an oxygen-free atmosphere to form a mixture layer including elements of the p-type ZnO-based semiconductor layer and the contact metal layer at a boundary region therebetween while maintaining a metal phase layer on a surface of the contact metal layer.

Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

Abstract: An organic optoelectronic device (OED) includes a plurality of OED cells separated by a vapor flow barrier that extends away from a substrate surface. The vapor flow barrier partially defines an OED cell area and helps prevent stray organic material deflected away from the substrate surface during deposition from being deposited outside the cell area. An organic vapor jet (OVJ) print head can be used to deposit organic material along the vapor flow barrier and may include one or more features configured to capture some of the stray organic material. A method that includes use of vapor flow barriers and/or capturing stray organic material can facilitate high-density printing of OED cells such as OLEDs with sharply defined edges and without cross-contamination among adjacent cells.

Abstract: The present invention provides a process for the adjustment of the electron acceptor strength of a transition metal oxide (TMO) to the HOMO of a semiconducting hole transport layer material (HTL material) in a device comprising an anode, a layer of said TMO deposited on said anode and a layer of said HTL material deposited on said TMO layer, comprising: depositing a solution comprising a precursor for said TMO on said anode, wherein the precursor solution has a pH selected so that the acceptor strength of the TMO for which the solution is a precursor is adjusted to the HOMO of said HTL material; drying the deposited solution to form a solid layer precursor layer; depositing a solution of said HTL material onto said solid layer precursor layer; and annealing thermally the resulting product to give the desired device having TMO at the interface between said anode and said HTL.

Abstract: An ink for forming a functional layer includes a first component that contains at least one kind of aromatic solvent of which a boiling point is higher than or equal to 250° C. and lower than or equal to 350° C., a second component that contains at least one kind of aliphatic solvent of which a boiling point is higher than or equal to 200° C., and a third component that is a positive hole injection material (m-MTDATA) for forming a positive hole injection layer, in which a solubility of the third component in the first component is higher than the solubility of the third component in the second component, a mixing ratio of the second component is 30 vol %, the boiling point of the first component is higher than the boiling point of the second component, and a difference between the boiling points thereof is higher than or equal to 30° C.

Abstract: A nitride semiconductor light emitting element has; a laminate of a first conduction type semiconductor layer, a light emitting layer and a second conduction type semiconductor layer of a different conduction type from that of the first conduction type semiconductor layer; and electrodes with a laminate structure formed on the first conduction type semiconductor layer, the electrodes include a conductive region of a first layer which has the conductive region and an insulated region.

Abstract: An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is arranged on the p-type GaN-based semiconductor region. The electrode 30 includes a Mg alloy layer 32 which is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with the surface 12 of the p-type GaN-based semiconductor region of the semiconductor multilayer structure 20.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The first electrode is provided on the second major surface of the semiconductor layer. The second electrode is provided on a side face of a portion of the semiconductor layer between the light emitting layer and the first major surface. The second interconnect layer is provided in the second opening and on the first insulating layer on the side opposite to the second major surface to connect to the second electrode provided on the side face. The second interconnect layer is provided on the side face of the portion of the semiconductor layer with interposing the second electrode.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The second semiconductor layer is provided on a [0001]-direction side of the first semiconductor layer. The light emitting layer includes a first well layer, a second well layer and a first barrier layer. An In composition ratio of the barrier layer is lower than that of the first well layer and the second well layer. The barrier layer includes a first portion and a second portion. The second portion has a first region and a second region. The first region has a first In composition ratio higher than that of the first portion. The second region is provided between the first region and the first well layer. The second region has a second In composition ratio lower than the first In composition ratio.

Abstract: A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.

Abstract: A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region.

Abstract: The present invention relates to a field effect electroluminescent ambipolar organic transistor in which there are two couples of control electrodes, a layer of ambipolar organic semiconductor in direct contact with the source and the drain electrode and two separate dielectric layers, and wherein said dielectric layers are each arranged between the ambipolar organic semiconductor layer and a couple of control electrodes.

Abstract: A method for growing nitride semiconductor crystals contains: growing a first semiconductor layer containing InxGa1-xN (0<x?1) on a substrate at a first growth temperature, using a first carrier gas containing an inert gas; growing a second semiconductor layer containing InyGa1-yN (0?y<1, y<x) on the first semiconductor layer at a second growth temperature higher than the first growth temperature, using a second carrier gas containing the inert gas and H2 gas, an amount of the H2 gas being smaller than an amount of the inert gas; and growing a third semiconductor layer containing InzGa1-zN (0?z<1, z<x) on the second semiconductor layer at the second growth temperature, using a third carrier gas containing the inert gas and H2 gas, an amount of the H2 gas in the third carrier gas being a smaller than the amount of H2 gas in the second carrier gas.

Abstract: A light emitting diode chip includes a sapphire substrate and a plurality of carbon nano-tubes arranged on an upper surface of the sapphire substrate. Gaps are formed between two adjacent carbon nano-tubes to expose parts of the upper surface of the sapphire substrate. An un-doped GaN layer is formed on the exposed parts of the upper surface of the sapphire substrate and covers the carbon nano-tubes. An n-type GaN layer, an active layer and a p-type GaN layer are formed on the un-doped GaN layer in sequence. A method for manufacturing the light emitting diode chip is also provided.

Abstract: A flexible display device includes: a display panel including a display substrate, an organic light emitting element formed on the display substrate, and a thin film encapsulation layer covering the organic light emitting element; a first insulation layer formed under the display panel; a lower protection film formed under the first insulation layer; and a reinforcement layer formed under the lower protection film, between the lower protection film and the first insulation layer, or on the display panel, wherein the reinforcement layer is configured to prevent damage to the display panel due to bending stress.

Abstract: Disclosed herein are compositions comprising an electron transport compound, an emissive compound, and an organic solvent. The emissive compound comprises an organic indium complex attached to a nanoparticle core. These compositions are useful in fabricating light emitting devices and can be deposited on a substrate via a printing process.

Abstract: A method for fabricating a light emitting device includes forming a trench in a first surface on first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second surface opposite to the first surface of the substrate. The method also includes forming alight emission layer over the first trench surface, but not over the remainder of the first substrate surface, and removing at least a portion of the substrate from the second side of the substrate to expose the light emission layer and allow it to emit light out of the protrusion or protrusions on the second side of the substrate. These protrusions may be elongated pyramids.

Abstract: A light emitting device (LED) includes a stress control layer having a compressive stress on a substrate, a bonding layer on the stress control layer, a semiconductor layer on the bonding layer and including an active region for emitting light on the bonding layer, a first electrode on a lower surface of the substrate, and a second electrode on the semiconductor layer. The compressive stress of the stress control layer is between about 1 and about 20 GPa.

Abstract: Method for manufacturing organic EL element including anode, hole injection layer, buffer layer, light-emitting layer, and cathode, layered on substrate in the stated order, and banks defining a light-emission region, and having excellent light-emission characteristics, due to the hole injection layer having excellent hole injection efficiency, being a tungsten oxide layer including an oxygen vacancy structure, formed under predetermined conditions to have an occupied energy level within a binding energy range from 1.8 eV to 3.6 eV lower than a lowest binding energy of a valence band, and after formation, subjected to atmospheric firing at a temperature within 200° C.-230° C. inclusive for a processing time of 15-45 minutes inclusive to have increased film density and improved dissolution resistance against an etching solution, a cleaning liquid, etc., used in a bank forming process.

Abstract: A method for forming an electronic device such as a passive color OLED display. Bottom electrodes are patterned onto a substrate in rows. Raised posts formed by photoresist are patterned into columns oriented orthogonally to the bottom row electrodes. One or more organic layers, such as R, G, B organic emissive layers are patterned over the raised posts and bottom electrodes using organic vapor jet printing (OVJP). An upper electrode layer is applied over the entire device and forms electrically isolated columnar electrodes due to discontinuities in the upper electrode layer created by the raised columnar posts. This permits patterning of the upper electrodes over the organic layers without using photolithography. A device formed by this method is also described.

Abstract: A method of fabricating a first device includes providing a first container that contains, in a desired proportion, a first organic emitting material having a first peak wavelength, a second organic emitting material having a second peak wavelength; providing a substrate having a first electrode disposed thereon; depositing an emissive layer over the first electrode, wherein the first container is a source of material for depositing, and wherein the emissive layer has a homogeneous composition and comprises the first and second organic emitting materials in the desired proportion; depositing a second electrode over the first emissive layer, and wherein the second peak wavelength is between 0 and 40 nm greater than the first peak wavelength.

Abstract: Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.

Abstract: A light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system are disclosed. The light emitting device may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers. The first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer may include Al. The second conductive semiconductor layer may have Al content higher than Al content of the first conductive semiconductor layer. The first conductive semiconductor layer may have Al content higher than Al content of the active layer.

Abstract: The disclosed light emitting diode includes a substrate provided, at a surface thereof, with protrusions, a buffer layer formed over the entirety of the surface of the substrate, a first semiconductor layer formed over the buffer layer, an active layer formed on a portion of the first semiconductor layer, a second semiconductor layer formed over the active layer, a first electrode pad formed on another portion of the first semiconductor layer, except for the portion where the active layer is formed, and a second electrode pad formed on the second semiconductor layer. Each protrusion has a side surface inclined from the surface of the substrate at a first angle, and another side surface inclined from the surface of the substrate at a second angle different from the first angle.

Abstract: Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.

Abstract: A p-type cladding layer (3) of p-type semiconductor is formed over a substrate. An active layer (5) including a p-type semiconductor region is disposed over the p-type cladding layer. A buffer layer (10) of non-doped semiconductor is disposed over the active layer. A ridge-shaped n-type cladding layer (11) of n-type semiconductor is disposed over a partial surface of the buffer layer. The buffer layer on both sides of the ridge-shaped n-type cladding layer is thinner than the buffer layer just under the ridge-shaped n-type cladding layer.

Abstract: When a p-layer 4 composed of GaN is maintained at ordinary temperature and TNO is sputtered thereon by an RF magnetron sputtering method, a laminated TNO layer 5 is in an amorphous state. Then, there is included a step of thermally treating the amorphous TNO layer in a reduced-pressure atmosphere where hydrogen gas is substantially absent to thereby crystallize the TNO layer. At the sputtering, an inert gas is passed through together with oxygen gas, and volume % of the oxygen gas contained in the gas passed through is 0.10 to 0.15%. In this regard, oxygen partial pressure is 5×10?3 Pa or lower. The temperature of the thermal treatment is 500° C. for about 1 hour.

Abstract: A flexible organic electroluminescent device and a method for fabricating the same includes a substrate defined with a display area including a plurality of pixel regions and a non-display area at the outside thereof; a switching thin film transistor and a drive thin film transistor formed at the each pixel region on the substrate; an organic insulating layer deposited on the substrate including the switching thin film transistor and drive thin film transistor to expose a drain electrode of the drive thin film transistor; a first electrode formed in each pixel region on the inorganic insulating layer, and connected to the drain electrode of the drive thin film transistor; banks formed around each pixel region on the substrate including the first electrode and separated from one another; an organic light emitting layer separately formed for each pixel region on the first electrode; a second electrode formed on an entire surface of the display area on the organic light emitting layer; and an organic layer forme

Abstract: Provided is a method of manufacturing III-nitride crystal having a major surface of plane orientation other than {0001}, designated by choice, the III-nitride crystal manufacturing method including: a step of slicing III-nitride bulk crystal through a plurality of planes defining a predetermined slice thickness in the direction of the designated plane orientation, to produce a plurality of III-nitride crystal substrates having a major surface of the designated plane orientation; a step of disposing the substrates adjoining each other sideways in a manner such that the major surfaces of the substrates parallel each other and such that any difference in slice thickness between two adjoining III-nitride crystal substrates is not greater than 0.1 mm; and a step of growing III-nitride crystal onto the major surfaces of the substrates.

Abstract: A top-emitting organic electroluminescent device and a manufacturing method thereof are provided. The device comprises a substrate (101), an anode layer (102), a hole-injecting layer (103), a hole-transporting layer (104), a light-emitting layer (105), an electron-transporting layer (106), an electron-injecting layer (107), and a cathode layer (108), which are stacked in order. The cathode layer (108) comprises an aluminum layer (1081) and a composite thin film (1082), which consists of Ag and SiO. The aluminum layer (1081) is deposited on the electron-injecting layer (107), and the composite thin film (1082) is deposited on the aluminum layer (1081). The cathode layer (108) has a composite-layer structure consisting of the Ag and the SiO, so the light transmittance of the device is enhanced, and the emission efficiency of the device can be improved.

Abstract: An organic light-emitting display apparatus includes: a substrate; a plurality of thin film transistors on the substrate, each of the thin film transistors including an active layer, a gate electrode, and source and drain electrodes; first electrodes electrically connected to the plurality of thin film transistors, respectively, and being on respective pixels corresponding to the plurality of thin film transistors; organic layers on the first electrodes, respectively, and including light-emitting layers; auxiliary electrodes each of which is on at least a portion between adjacent organic layers of the organic layers; and a second electrode facing the first electrodes and covering the organic layers and the auxiliary electrodes.

Abstract: The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane.

Abstract: A fabricating method of a light emitting device is provided. In the fabricating method, a substrate having a first electrode layer is provided. An organic film solution that includes an organic material, a solid medium, and a solvent is provided. The solid medium is capable of sublimation, and the organic material and the solid medium are mixed into the solvent. An organic film is formed on the first electrode layer by using the organic film solution. The solvent and the solid medium are removed to form an organic functional layer that has the organic material. A second electrode layer is formed on the organic functional layer.

Abstract: A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.

Abstract: InGaN-based light-emitting devices fabricated on an InGaN template layer are disclosed.

Abstract: In an aspect, an organic light-emitting diode, a method of manufacturing the same, and a method of forming a material layer are provided.

Abstract: The invention relates to an OLEEC component and to a production process therefor. This component has an active layer including a novel emitter complex. This complex is formed by the coordination of low molecular weight semiconductors around a central cation. The complexation allows wet-chemical processing of low molecular weight semiconductors. This also allows formation of emitter complexes from effective hole or electron transport materials.