Abstract: There is provided a process for forming a layer of electroactive material having a substantially flat profile. The process includes: providing a workpiece having at least one active area; depositing a liquid composition including the electroactive material onto the workpiece in the active area, to form a wet layer; treating the wet layer on the workpiece at a controlled temperature in the range of ?25 to 80° C. and under a vacuum in the range of 10?6 to 1,000 Torr, for a first period of 1-100 minutes, to form a partially dried layer; heating the partially dried layer to a temperature above 100° C. for a second period of 1-50 minutes to form a dried layer.

Abstract: A method of fabricating an organic light emitting device includes forming a first electrode layer on a substrate, surface-treating the first electrode layer with CF4 plasma, forming a first common layer containing pentacene on the surface-treated first electrode layer, forming an organic light emitting layer on the first common layer, forming a second common layer on the organic light emitting layer, and forming a second electrode layer on the second common layer. The CF4 plasma treatment enhances the luminous efficiency of the organic light emitting device.

Abstract: A light emitting device comprising a staggered composition quantum well (QW) has a step-function-like profile in the QW, which provides higher radiative efficiency and optical gain by providing improved electron-hole wavefunction overlap. The staggered QW includes adjacent layers having distinctly different compositions. The staggered QW has adjacent layers Xn, wherein X is a quantum well component and in one quantum well layer n is a material composition selected for emission at a first target light regime, and in at least one other quantum well layer n is a distinctly different composition for emission at a different target light regime. X may be an In-content layer and the multiple Xn-containing layers provide a step function In-content profile.

Abstract: A method of forming a layer of an electronic device, for example an organic light-emitting device, the method comprising the step of depositing a precursor layer comprising a compound of formula (I) and reacting the compound of formula (I) in a ring-opening addition reaction: Core-(Reactive Group)n??(I) wherein Core is a non-polymeric core group; and each Reactive Group, which may be the same or different in each occurrence, is a group of formula (II): wherein Sp1 independently in each occurrence represents a spacer group; w independently in each occurrence is 0 or 1; Ar in each occurrence independently represents an aryl or heteroaryl group; R1 in each occurrence independently represents H or a substituent, with the proviso that at least one R1 is a substituent; n is at least 1; and * is a point of attachment of the group of formula (II) to the Core; and wherein the compound of formula (I) reacts with itself or with a non-polymeric co-reactant.

Abstract: A method of manufacturing a MOSFET includes the steps of preparing a silicon carbide substrate, forming an active layer on the silicon carbide substrate, forming a gate oxide film on the active layer, forming a gate electrode on the gate oxide film, forming a source contact electrode on the active layer, and forming a source interconnection on the source contact electrode. The step of forming the source interconnection includes the steps of forming a conductor film on the source contact electrode and processing the conductor film by etching the conductor film with reactive ion etching. Then, the method of manufacturing a MOSFET further includes the step of performing annealing of heating the silicon carbide substrate to a temperature not lower than 50° C. after the step of processing the conductor film.

Abstract: A method is provided for bonding a first substrate carrying a semiconductor device layer on its front surface to a second substrate. The method comprises producing the semiconductor device layer on the front surface of the first substrate, depositing a first metal bonding layer or a stack of metal layers on the first substrate, on top of the semiconductor device layer, depositing a second metal bonding layer or a stack of metal layers on the front surface of the second substrate, depositing a metal stress-compensation layer on the back side of the second substrate, thereafter establishing a metal bond between the first and second substrate, by bringing the first and second metal bonding layers or stacks of layers into mutual contact under conditions of mechanical pressure and temperature suitable for obtaining the metal bond, and removing the first substrate.

Abstract: The present invention provides a method for manufacturing a group III nitride semiconductor light emitting element, with which warping can be suppressed upon the formation of respective layers on the substrate, a semiconductor layer including a light emitting layer of excellent crystallinity can be formed, and excellent light emission characteristics can be obtained; such a group III nitride semiconductor light emitting element; and a lamp. Specifically disclosed is a method for manufacturing a group III nitride semiconductor light emitting element, in which an intermediate layer, an underlayer, an n-type contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, and a p-type contact layer are laminated in sequence on a principal plane of a substrate, wherein a substrate having a diameter of 4 inches (100 mm) or larger, with having an amount of warping H within a range from 0.

Abstract: A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate having a hexagonal III-nitride semiconductor and having a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, the laser structure including a substrate and a semiconductor region formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal III-nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.

Abstract: The invention describes electronic devices comprising a metal complex compound having at least one tetradentate ligand having N and/or P donors, in particular a ligand having a PPPP, NNNN, PNNP or NPPN structure, and uses of a complex of this type in the electronic field and for the generation of light.

Abstract: A method of cleaning a mask includes preparing a mask on which a first metal layer and a second metal layer are stacked sequentially, and lifting off the second metal layer by removing the first metal layer.

Abstract: Provided is a method and an apparatus for manufacturing an organic EL device which make it possible to manufacture organic EL devices capable of suppressing quality degradation. The method for manufacturing an organic EL device, in which constituent layers of an organic EL element are formed over a substrate in the form of a strip by deposition, while the substrate is being moved in the longitudinal direction, includes: a constituent layer-forming step of performing deposition over one surface of the substrate, while the substrate is being moved in the longitudinal direction, sequentially in an upward deposition unit and a lateral deposition unit provided along the moving direction of the substrate by discharging a vaporized material from an evaporation source. The constituent layer-forming step includes an upward deposition step, a laterally deposition step, and a direction changing step.

Abstract: In an aspect, an organic light-emitting display apparatus is provided, including a display substrate; a sealing substrate configured to face the display substrate; a sealing material for bonding the display substrate and the sealing substrate and surrounding a circumference of the display unit; and a bonding layer comprising a plurality of through holes, wherein the plurality of through holes comprise partition walls therein.

Abstract: Structures and methodologies to obtain lasing in indirect gap semiconductors such as Ge and Si are provided and involves excitonic transitions in the active layer comprising of at least one indirect gap layer. Excitonic density is increased at a given injection current level by increasing their binding energy by the use of quantum wells, wires, and dots with and without strain. Excitons are formed by holes and electrons in two different layers that are either adjacent or separated by a thin barrier layer, where at least one layer confining electrons and holes is comprised of indirect gap semiconductor such as Si and Ge, resulting in high optical gain and lasing using optical and electrical injection pumping. In other embodiment, structures are described where excitons formed in an active layer confining electrons in the direct gap layer and holes in the indirect gap layer; where layers are adjacent or separated by a thin barrier layer.

Abstract: Provided is an organic light-emitting display device comprising a substrate, an insulating layer disposed on the substrate, a first electrode disposed on the insulating layer, an organic layer disposed on the first electrode, a second electrode disposed on the organic layer, an auxiliary electrode disposed on the insulating layer and a metal layer disposed adjacent to the auxiliary electrode and connected to the auxiliary electrode and the second electrode.

Abstract: A light-emitting composition comprising a mixture of a fluorescent light-emitting material a triplet-accepting copolymer comprising a triplet-accepting repeat unit and a repeat unit of formula (I): wherein A is a divalent group; R1 independently in each occurrence is a substituent; R2 in each occurrence is H or a substituent; and x independently in each occurrence is 0, 1, 2 or 3.

Abstract: Improved chalcogenide solutions are provided. In one aspect, a method of forming an aqueous selenium-containing solution is provided. The method includes the following step. Water, ammonium hydroxide, elemental selenium, and elemental aluminum are contacted under conditions sufficient to form the aqueous selenium-containing solution. The conditions may include sonication for a period of time of from about 1 minute to about 10 minutes and/or stirring for a period of time of from about 10 minutes to about 72 hours at a temperature of from about 20° C. to about 25° C. A method of fabricating a photovoltaic device is also provided.

Abstract: Trench-confined selective epitaxial growth process in which epitaxial growth of a semiconductor device layer proceeds within the confines of a trench. In embodiments, a trench is fabricated to include a pristine, planar semiconductor seeding surface disposed at the bottom of the trench. Semiconductor regions around the seeding surface may be recessed relative to the seeding surface with Isolation dielectric disposed there on to surround the semiconductor seeding layer and form the trench. In embodiments to form the trench, a sacrificial hardmask fin may be covered in dielectric which is then planarized to expose the hardmask fin, which is then removed to expose the seeding surface. A semiconductor device layer is formed from the seeding surface through selective heteroepitaxy. In embodiments, non-planar devices are formed from the semiconductor device layer by recessing a top surface of the isolation dielectric.

Abstract: The present invention relates to light-emitting devices and in particular organic light-emitting devices (OLEDs). In particular, the invention relates to emitter materials in which charged metal complexes are bonded to a polymer by electrostatic interactions.

Abstract: Methods of fabricating semiconductor devices or structures include bonding a layer of semiconductor material to another material at a temperature, and subsequently changing the temperature of the layer of semiconductor material. The another material may be selected to exhibit a coefficient of thermal expansion such that, as the temperature of the layer of semiconductor material is changed, a controlled and/or selected lattice parameter is imparted to or retained in the layer of semiconductor material. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Novel intermediate structures are formed during such methods. Engineered substrates include a layer of semiconductor material having an average lattice parameter at room temperature proximate an average lattice parameter of the layer of semiconductor material previously attained at an elevated temperature.

Abstract: A method for manufacturing a Group III nitride semiconductor of the present invention includes a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, wherein said sputtering step includes respective substeps of: a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T1; and a second sputtering step of continuing the film formation of the Group III nitride semiconductor while lowering the temperature of the substrate to a temperature T2 which is lower than the temperature T1.

Abstract: A manufacturing method of a light emitting device is provided. A first electrode is formed on a substrate. The first electrode includes a patterned conductive layer, and the patterned conductive layer includes an alloy containing a first metal and a second metal. An annealing process is performed on the first electrode, so as to form a passivation layer at least on a side surface of the first electrode. The passivation layer includes a compound of the second metal. A light emitting layer is formed on the first electrode. A second electrode is formed on the light emitting layer.

Abstract: A vapor deposition apparatus for forming a deposition layer on a substrate, the vapor deposition apparatus includes a supply unit configured to receive a first source gas, a reaction space connected to the supply unit, a plasma generator in the reaction space, a first injection unit configured to inject a deposition source material to the substrate, the deposition source material including the first source gas, and a filament unit in the reaction space, the filament unit being connected to a power source.

Abstract: A transparent conductive electrode stack containing a work function adjusted carbon-containing material is provided. Specifically, the transparent conductive electrode stack includes a layer of a carbon-containing material and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack shifts the work function of the layer of carbon-containing material to a higher value for better hole injection into the OLED device as compared to a transparent conductive electrode that includes only a layer of carbon-containing material and no work function modifying material.

Abstract: An OLED is disclosed which includes an anode, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode. The light emitting layer includes a first phosphorescent light emitting layer, a blue fluorescent light emitting layer, and a second phosphorescent light emitting layer, which are stacked along a direction from the anode to the cathode. The first phosphorescent light emitting layer includes a material capable of conducting holes and blocking electrons. The second phosphorescent light emitting layer includes a material capable of conducting electrons and blocking holes. The blue fluorescent light emitting layer includes a material capable of conducting both holes and electrons. With the phosphorescent light emitting layers having a function of restricting charges, the exciton recombination zone is constrained in the blue fluorescent light emitting layer.

Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.

Abstract: An organic light emitting diode is disclosed. The organic light emitting diode includes an anode, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode. The light emitting layer includes a first phosphorescent light emitting layer, a first isolation layer, a blue fluorescent light emitting layer, a second isolation layer, and a second phosphorescent light emitting layer, which are stacked along a direction from the anode to the cathode. The first isolation layer is configured to conduct holes and to block electrons, and the second isolation layer is configured to conduct electrons and to block holes. The exciton recombination zone is constrained in the blue fluorescent light emitting layer, thus improving the light emitting efficiency and light stability of the organic light emitting diode.

Abstract: The organic electroluminescent element (100) of the present invention comprises, on a substrate (1), electrodes (positive electrode (2) and negative electrode (8)) forming a pair and an organic functional layer (20) having at least an electron transport layer (6) and a light emitting layer (5). At least one of the electron transport layer (6) and the light emitting layer (5) contain semiconductor nanoparticles having a conduction band energy level of ?5.5-?1.5 ev.

Abstract: Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.

Abstract: Provided are an OLED device and a method of manufacturing the OLED device that may provide improved luminance uniformity. The disclosed OLED may have a first electrode that has a first sheet resistance Rs, and a second electrode that has a second sheet resistance, wherein the second sheet resistance may be in the range of 0.3Rs-1.3Rs. In addition, the disclosed OLED may have a plurality of equal potential difference between points on a first electrode and a second electrode. The equal potential difference may be provided by a gradient resistance formed on at least one of the electrodes.

Abstract: A method of manufacturing an organic light-emitting diode including preparing, by a dry etching method using a particle single layer film as an etching mask, a substrate provided with an uneven structure in which a plurality of unevenness is arranged in two dimensions on the surface of the substrate, and stacking, on the uneven structure, at least an anode conductive layer, an EL layer including a light-emitting layer containing an organic light-emitting material, and a cathode conductive layer containing a metal layer, such that the uneven structure is reproduced on the surface of the metal layer on the side of the EL layer, wherein the particle single layer film is formed using a mixture of a plurality of particles having different particle sizes, and an uneven structure is provided which satisfies particular requirements.

Abstract: A method of forming microelectronic systems on a flexible substrate includes depositing (typically sequentially) on a first side of the flexible substrate at least one organic thin film layer, at least one electrode and at least one thin film encapsulation layer over the at least one organic thin film layer and the at least one electrode, wherein depositing the at least one organic thin film layer, depositing the at least one electrode and depositing the at least one thin film encapsulation layer each occur under vacuum and wherein no physical contact of the at least one organic thin film layer or the at least one electrode with another solid material occurs prior to depositing the at least one thin film encapsulation layer.

Abstract: The invention relates to dimeric copper(I) complexes according to formula A, in particular as emitters in optoelectronic devices such as organic light emitting diodes (OLEDs) and other devices wherein: Cu: Cu(I), X: Cl, Br, I, SCN, CN, and/or alkynyl and P?N: a phosphine ligand substituted with a N-heterocycle.

Abstract: A method of performing a photoelectrochemical (PEC) etch on an exposed surface of a semipolar {20-2-1} III-nitride semiconductor, for improving light extraction from and for enhancing external efficiency of one or more active layers formed on or above the semipolar {20-2-1} III-nitride semiconductor.

Abstract: Provided is a highly reliable light-emitting element in which damage to an EL layer is reduced even when an auxiliary electrode for an upper electrode is provided. Further, a highly reliable light-emitting device in which luminance unevenness is suppressed is provided. The light-emitting element includes a first electrode; an insulating layer over the first electrode; an auxiliary electrode having a projection and a depression on a surface, over the insulating layer; a layer containing a light-emitting organic compound over the first electrode and the auxiliary electrode; and a second electrode over the layer containing the light-emitting organic compound. At least part of the auxiliary electrode is electrically connected to the second electrode.

Abstract: Compositions having a dispersion of nano-particles therein and methods of fabricating compositions having a dispersion of nano-particles therein are described. In an example, a method of forming a composition having a dispersion of nano-particles therein includes forming a mixture of semiconductor nano-particles and discrete prepolymer molecules. A polymer matrix is formed from the discrete prepolymer molecules. The polymer matrix includes a dispersion of the semiconductor nano-particles therein. In another example, a composition includes a medium including discrete prepolymer molecules. The medium is a liquid at 25 degrees Celsius. A plurality of semiconductor nano-particles is suspended in the medium.

Abstract: Disclosed are a nitride semiconductor light-emitting element and a method for manufacturing the same. The nitride semiconductor light-emitting element according to the present invention comprises: a current blocking part disposed between a substrate and an n-type nitride layer; an activation layer disposed on the top surface of the n-type nitride layer; and a p-type nitride layer disposed on the top surface of the activation layer, wherein the current blocking part is an AlxGa(1-x)N layer, and the Al content x times layer thickness (?m) is in the range of 0.01-0.06. Accordingly, the nitride semiconductor light-emitting element can increase the luminous efficiency by having a current blocking part which prevents current leakage from occurring.

Abstract: A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.

Abstract: LED devices incorporating diamond materials and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.

Abstract: The present invention relates to a process for preparing an electronic device comprising at least one layer selected from the group consisting of a upper electrode layer, a lower electrode layer, an organic layer and an inorganic layer, which comprises a step of introducing a nanoparticle layer or a nano/micro structure layer by adhering charged nanoparticles, before, after or during forming the layer.

Abstract: A deposition apparatus for performing a deposition process by using a mask with respect to a substrate, the deposition apparatus includes a chamber, a support unit in the chamber, the support unit including first holes and being configured to support the substrate, a supply unit configured to supply at least one deposition raw material toward the substrate, and movable alignment units through the first holes of the support unit, the alignment units being configured to support the mask and to align the mask with respect to the substrate.

Abstract: The present invention provides an organic light-emitting element with improved chemical stability at the interface between the light-emitting layer and the electron transport layer, which maintains excellent, stable luminous efficiency for a long period. For this purpose, one aspect of the present invention is an organic EL element having a substrate, and a hole injection layer, a buffer layer, a light-emitting layer, a regulation layer, an electron transport layer and a cathode which are sequentially layered on one side of the substrate. The regulation layer is made of NaF, which is not chemically reactive with the light-emitting layer or the electron transport layer, and the electron transport layer is made of a CT complex using a host material and an n-type dopant, which are both organic materials.

Abstract: Isolation of III-nitride devices may be performed with a dopant selective etch that provides a smooth profile with little crystal damage in comparison to previously used isolation techniques. The dopant selective etch may be an electro-chemical or photo-electro-chemical etch. The desired isolation area may be identified by changing the conductivity type of the semiconductor material to be etched. The etch process can remove a conductive layer to isolate a device atop the conductive layer. The etch process can be self stopping, where the process automatically terminates when the selectively doped semiconductor material is removed.

Abstract: The present invention provides a method for producing a Group III nitride semiconductor light-emitting device wherein in the formation of a light-emitting layer by forming a well layer, a capping layer and a barrier layer, the well layer having superior flatness and crystallinity is formed while suppressing the occurrence of damage to the well layer. In formation of the light-emitting layer, pits are provided in the light-emitting layer so that a pit diameter D falls within a range of 120 nm to 250 nm. The light-emitting layer formation step comprises the steps of forming the barrier layer, forming the well layer, and forming the capping layer. The growth temperature of the barrier layer is higher by any temperature in a range of 65° C. to 135° C. than that of the well layer.

Abstract: A polymer comprising repeat units of formula (I) and one or more co-repeat units: Ar1 in each occurrence independently represent an aryl or heteroaryl group; R1 and R2 in each occurrence independently represent a substituent; p independently in each occurrence is 0 or a positive integer; Sp represents a spacer group comprising at least one carbon or silicon atom spacing the two groups Ar1 apart; and each group Ar1 is bound to an aromatic group of a co-repeat unit. The polymer may form a charge-transporting layer of an OLED or may be a host material used with a luminescent dopant in a light-emitting layer of an OLED.

Abstract: A method of producing a semiconductor device can include receiving a Group III-N wafer as a substrate, initiating a first inversion domain boundary layer to form a thin etch stop layer, terminating the etch stop layer with a second inversion domain boundary layer, and subsequently continuing the active region growth.

Abstract: An organic light emitting display device (OLED) includes a transparent substrate a first electrode formed on the transparent substrate a partition wall including first and second tapered structures having different tapers and formed on the first electrode, and an organic light emitting layer stacked on both sides of the first electrode below a level of the partition wall and a second electrode. The OLED device is manufactured by, for example, forming a first electrode on a transparent substrate, forming a partition wall having first and second tapered structures on the first electrode, and forming an organic light emitting layer and a second electrode, sequentially, on both sides of the first electrode below a level of the partition wall.

Abstract: In order to achieve the increased efficiency of an organic light-emitting element, there is a need to reduce the influence of non-radiative recombination of electron-hole pairs except for surface plasmon polariton excitation, to convert most of exciton energy into visible light, and to tremendously improve the luminous efficiency of the organic light-emitting element. An organic light-emitting element according to the present invention includes a reflective electrode, a transparent electrode, and a light-emitting layer placed between the reflective electrode and the transparent electrode, and the organic light-emitting element is configured so that the light-emitting layer contains a host and a first dopant, and for the first dopant, one of the vertical component and horizontal component of the average value for transition dipole moments with respect to a substrate surface is larger than the other of the components.

Abstract: An object of the present invention is to provide an organic EL light-emitting device in which a permeation and diffusion of moisture from outside are prevented and a stable light-emitting characteristic is able to be maintained for a long period. The present invention relates to an organic EL light-emitting device comprising a sealing layer, a hygroscopic layer and a protective layer, which are aligned on the back of an organic electroluminescence element under a predetermined condition, wherein the sealing layer and the protective layer are constituted from a specific material, whereby it is possible to maintain a stable light-emitting characteristic for a long period together with suppressing the deterioration caused by moisture being permeated from outside.

Abstract: A highly fluorinated photoresist employing a photodimerization chemistry and a method for manufacturing an organic light emitting diode display using the same. The photoresist includes a copolymer that is made from two different monomers. When the copolymer is used as a photoresist, the photoresist has the characteristic that it becomes insoluble when exposed to an ultraviolet light having a wavelength of 365 nm.

Abstract: An unsubstituted or substituted phosphorescent compound of formula (I): Wherein: M is a transition metal; L in each occurrence is independently a mono- or poly-dentate ligand; R8 is H or a substituent; R9 and R10 are each independently selected from the group consisting of branched, linear or cyclic C1-20 alkyl wherein non-adjacent C atoms of the C1-20 alkyl may be replaced with —O—, —S—, —NR12—, —SiR122— or —COO— and one or more H atoms may be replaced with F or —NR122, wherein R12 is H or a substituent; R11 in each occurrence is independently H or a substituent, wherein two groups R11 may be linked to form a ring; x is at least 1; y is 0 or a positive integer; and z1, z2 and z3 are each independently 0 or a positive integer.