Abstract: A process of producing a radiation-emitting organic-electronic device having a first and a second electrode layer and an emitter layer includes: A) providing a phosphorescent emitter with an anisotropic molecule structure and a matrix material, B) applying the first electrode layer to a substrate, C) applying the emitter layer under thermodynamic control, with vaporization of the phosphorescent emitter and of the matrix material under reduced pressure and deposition thereof on the first electrode layer such that molecules of the phosphorescent emitter are in anisotropic alignment, and D) applying the second electrode layer on the emitter layer.

Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.

Abstract: A method of fabricating a semiconductor laser device by forming a semiconductor structure at least part of which is in the form of a mesa structure having a flat top. The steps include depositing a passivation layer over the mesa structure, forming a contact opening in the passivation layer on the flat top of the mesa structure; and depositing a metal contact portion, with the deposited metal contact portion contacting the semiconductor structure via the contact opening. The contact opening formed through the passivation layer has a smaller area than the flat top of the mesa structure to allow for wider tolerances in alignment accuracy. The metal contact portion comprises a platinum layer between one or more gold layers to provide an effective barrier against Au diffusion into the semiconductor material.

Abstract: The present invention provides an organic electroluminescence (EL) element that suppresses leakage current flowing between an upper electrode and an under electrode through an organic layer. The organic EL element (51) is provided at a pixel region (R11) surrounded by a bank (3) on the substrate, and comprises: an organic layer (9) including at least one layer of the light-emitting layer (6); an upper electrode (7) and an under electrode (2) which hold the organic layer (9) therebetween; and a leakage current block layer (5) formed between the upper electrode (7) and the under electrode (2) at the boundary region (R12) between the pixel region (R11) and the bank region (R13), and formed between the upper electrode (7) and the under electrode (2) at the boundary region (R12) between the pixel region (R11) and the bank region (R13).

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a dielectric material layer on a silicon substrate, the dielectric material layer being patterned to define a plurality of regions separated by the dielectric material layer; a first buffer layer disposed on the silicon substrate; a heterogeneous buffer layer disposed on the first buffer layer; and a gallium nitride layer grown on the heterogeneous buffer layer only within the plurality of regions.

Abstract: A light emitting diode and a method of fabricating a light emitting diode, the diode has a first set of multiple quantum wells (MQWs), each of the MQWs of the first set comprising a wetting layer providing nucleation sites for quantum dots (QDs) or QD-like structures in a well layer of said each MQW; and a second set of MQWs, each of the MQWs of the second set formed so as to exhibit a photoluminescence (PL) peak wavelength shifted compared to the MQWs of the first set.

Abstract: An organic light emitting display device is manufactured by: preparing a target substrate that includes sub-pixel areas (each having a thin film transistor) and pixel defining areas (each having a conductive layer) between the sub-pixel areas; preparing an ionized deposition material by vaporizing and ionizing a deposition material; applying a ground voltage to one of the sub-pixel areas while applying a voltage having a same polarity as the ionized deposition material to the neighboring ones of the sub-pixel areas and to the pixel defining areas; and depositing the ionized deposition material on the one of the sub-pixel areas to form an organic thin layer while the one of the sub-pixel areas is polarized by an electric field generated by the voltage being applied to the conductive layer of the pixel defining areas.

Abstract: A main object of the present invention is to provide an organic EL element including an electron injection and transport layer containing an organic boron compound, which has excellent characteristics such as efficiency and service life. The present invention achieves the object mentioned above by providing an organic EL element including: an anode; a light emitting layer formed on the anode; an electron injection and transport layer that is formed on the light emitting layer, contains an organic boron compound, and has a crystalline structure; and a cathode formed on the electron injection and transport layer.

Abstract: An ink composition that is capable of forming a low molecular weight luminescent material having no repeating structure into a favorable film within a partition wall by coating by a nozzle printing method, an organic EL device using the ink composition, and the method for producing the organic EL device are to be provided. The ink composition is used for forming an organic luminescent medium layer of an organic EL device by a nozzle printing method, in which an organic luminescent layer as one of the organic layer contains a low molecular weight luminescent material that has no repeating structure and a polymer material having a repeating structure, which are mixed with each other, and the polymer material is a nonconductive material.

Abstract: An optoelectronic device is formed having a sandwich structure, which consists of an inorganic semiconductor layer, an organic semiconductor layer, and another inorganic semiconductor layer, where both of the two inorganic semiconductor layers are produced by a solution process.

Abstract: A method of forming a template on a silicon substrate includes providing a single crystal silicon substrate. The method further includes forming an aluminum oxide coating on the surface of the silicon substrate, the aluminum oxide being substantially crystal lattice matched to the surface of the silicon substrate and epitaxially depositing a layer of aluminum nitride (AlN) on the aluminum oxide coating substantially crystal lattice matched to the surface of the aluminum nitride.

Abstract: A method of manufacturing a light emitting diode is disclosed. In one aspect, the light emitting diode has a carrier, an active layer structure of III-nitride type materials, and a photonic crystal structure of III-nitride type materials. The active layer structure includes a first active layer with an n-type doped layer and a p-type doped layer and suitably a quantum well structure. The photonic crystal structure includes periodically distributed trenches or periodically distributed pillars spaced by one or more trenches. The photonic crystal structure includes an overgrowth layer within which a diameter of a trench gradually increases, and a directional photonic crystal layer in which the diameter of a trench is substantially constant. The diode may be formed in a method wherein the directional photonic crystal layer is provided on a three-dimensional pattern that exposes selected areas of the first surface of the substrate.

Abstract: A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes using a first physical deposition process in the first process station to cause formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and using a second physical deposition process in the second process station to cause formation of a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control.

Abstract: Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

Abstract: Provided is a manufacturing method for an organic electroluminescence device having high precision and high emission characteristics without degrading characteristics of an organic compound layer during lift-off, the manufacturing method including the steps of: forming a first organic compound layer; forming an intermediate layer; processing a first organic compound layer; forming a second organic compound layer; covering the second organic compound layer with an eluted constituent material for the intermediate layer by bringing the intermediate layer into contact with a solution for dissolving the intermediate layer; removing the intermediate layer; and forming a second electrode.

Abstract: A light-emitting diode structure and a manufacturing method thereof are provided. The structure includes a semiconductor substrate, a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, an electrode contact layer, a positive electrode and a negative electrode. A stacking layer consisting of the first type semiconductor layer, the light-emitting layer, the second type semiconductor layer and the electrode contact layer is formed on the semiconductor substrate, and a first opening penetrates the electrode contact layer and exposes a part of the second type semiconductor layer. The positive electrode is formed in the first opening. A part of the first type semiconductor layer, the light-emitting layer, the second type semiconductor layer and the electrode contact layer is removed to form a platform structure. The negative electrode is formed on the exposed surface of the first type semiconductor layer.

Abstract: The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be formed on the emitting surface, prior to the RIE process, by cutting into the surface using a saw blade or a masked etching technique. Sidewall cuts may also be made in the emitting surface prior to the RIE process. A light absorbing damaged layer of material associated with saw cutting is removed by the RIE process. The surface morphology created by the RIE process may be emulated using different, various combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching.

Abstract: A light-emitting device is disclosed. The light-emitting device comprises a substrate, an ion implanted layer on the substrate, a light-emitting stack layer disposed on the ion implanted layer, and an adhesive layer connecting the substrate with the light-emitting stack layer, wherein the adhesive layer comprises a thin silicon film disposed between the ion implanted layer and the light-emitting layer. This invention also discloses a method of manufacturing a light-emitting device comprising the steps of forming a light-emitting stack layer, forming a thin silicon film on the light-emitting stack layer, providing a substrate, forming an ion implanted layer on the substrate, and providing an electrode potential difference to form an oxide layer between the thin silicon film and the ion implanted layer.

Abstract: A stacking fault and twin blocking barrier for forming a III-V device layer on a silicon substrate and the method of manufacture is described. Embodiments of the present invention enable III-V InSb device layers with defect densities below 1×108 cm?2 to be formed on silicon substrates. In an embodiment of the present invention, a buffer layer is positioned between a III-V device layer and a silicon substrate to glide dislocations. In an embodiment of the present invention, GaSb buffer layer is selected on the basis of lattice constant, band gap, and melting point to prevent many lattice defects from propagating out of the buffer into the III-V device layer. In a specific embodiment, a III-V InSb device layer is formed directly on the GaSb buffer.

Abstract: A substrate for an organic light-emitting device (OLED) and a method of manufacturing the same, in which the light extraction efficiency and process efficiency of the OLED can be improved. The substrate for an OLED that includes a base substrate, a first metal oxide thin film coating one surface of the base substrate, the first metal oxide thin film having a first texture on a surface thereof, a second metal oxide thin film coating the other surface of the base substrate, and a third metal oxide thin film coating a surface of the second metal oxide thin film.

Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.

Abstract: It is an object to provide a composition in which an anthracene derivative is dissolved and a technique in which a thin film that has a favorable film quality is formed by a wet process using the composition. In addition, it is another object to manufacture a highly reliable light-emitting element using the composition at low cost with high productivity. A composition having a solvent and an anthracene derivative having one anthracene structure and one carbazolyl group which is bonded to the anthracene structure directly or through a phenyl group is formed. A thin film with a favorable film quality can be formed by a wet process using the composition. Accordingly, a highly reliable light-emitting element can be manufactured using such a thin film.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, and an inorganic film. The semiconductor layer includes a first surface having an unevenness, a second surface opposite to the first surface, and a light emitting layer. The semiconductor layer includes gallium nitride. The inorganic film is provided to conform to the unevenness of the first surface and in contact with the first surface. The inorganic film has main components of silicon and nitrogen. The inorganic film has a refractive index between a refractive index of the gallium nitride and a refractive index of air. An unevenness is formed also in a surface of the inorganic film.

Abstract: The present invention relates to a novel organometallic compound, and more particularly, to a luminescent organometallic compound in which intermolecular interaction is inhibited by means of introducing a germanium substituent, thereby improving light-emitting characteristics. The present invention also relates to an organic electronic device, specifically, to an organic light-emitting diode using the compound. According to the present invention, a germanium substituent is introduced to the parent organometallic iridium compound, thus inhibiting an intermolecular interaction in the solid state and enabling the compound of the present invention to be effectively used in solution processing. When the compound of the present invention is used as part of a light-emitting layer of an organic light-emitting diode, the light-emitting efficiency of the light-emitting diode may be significantly improved.

Abstract: A manufacturing process of a vertical type solid state light emitting device is provided. A substrate is provided. M metal nitride buffer layer is formed on the substrate, and a breakable structure containing M metal droplet structures is formed on the buffer layer. A first type semiconductor layer, an active layer and a second type semiconductor layer are sequentially formed on the breakable structure. A second type electrode is formed on the second type semiconductor layer. The first type semiconductor layer, the active layer, the second type semiconductor layer and the second type electrode are stacked to form a light emitting stacking structure. The breakable structure is damaged to separate from the light emitting stacking structure, so that a surface of the first type semiconductor layer of the light emitting stacking structure is exposed. A first type electrode is formed on the surface of the first type semiconductor layer.

Abstract: A organic EL display panel and similar are provided so as to constrain a gradual increase in contact resistance between a common electrode and a power supply layer. In a panel including a substrate, a pixel electrode, a power supply layer formed with separation from the pixel electrode, a resin partition layer having an aperture over the power supply layer and over the pixel electrode, an organic light-emitting layer, a functional layer in contact with the organic light-emitting layer in the aperture and electrically connected to the power supply layer, and a common electrode, an inorganic film is disposed between the functional layer and side walls of an opening for the aperture over the power supply layer in the resin partition layer.

Abstract: A method of producing an optoelectronic semiconductor chip having a semiconductor layer stack based on a material system AlInGaP includes preparing a growth substrate having a silicon surface, arranging a compressively relaxed buffer layer stack on the growth substrate, and metamorphically, epitaxially growing the semiconductor layer stack on the buffer layer stack, the semiconductor layer stack having an active layer that generates radiation.

Abstract: Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed.

Abstract: An organic light-emitting display device and a method of manufacturing the organic light-emitting display device are provided. The organic light-emitting display device includes a plurality of pixels each including: a first region including a light-emitting region for emitting light, a first electrode and an emission layer covering the first electrode being located in the light-emitting region; and a second region including a transmissive region for transmitting external light through the display device. The display device also includes: a third region between the pixels; a first auxiliary layer in the first and third regions; a second electrode on the first auxiliary layer in the first and third regions; a second auxiliary layer covering the second electrode and located in the first and second regions and not in the third region; and a third electrode on the second electrode in the third region.

Abstract: An optoelectronic device comprising: a substrate; and an epitaxial stack including a first semiconductor layer having a first conductivity-type impurity, an active layer, and a second semiconductor layer having a second conductivity-type impurity formed in sequence on the substrate; a hollow component formed inside the active layer or the second semiconductor layer, wherein the layer with the hollow component is doped with an additional impurity.

Abstract: The present invention relates to a liquid crystal display and a manufacturing method thereof. The insulation layer of the liquid crystal display has: a first surface having a first opening; a second surface having a second opening; and a connecting structure having a via formed between the first and the second surfaces, wherein the via connects the first opening and the second opening, and the second opening is smaller than the first opening. The manufacturing method includes the steps of: providing a semiconductor layer having a surface with an area; forming a photoresist layer on the area; forming a protective layer on the semiconductor layer and the photoresist layer; and removing the photoresist layer through a lift-off process, so as to form a via penetrating the protective layer to expose the area of the semiconductor.

Abstract: An organic EL device includes a first substrate and a plurality of organic EL elements above a first portion of the first substrate. A first inorganic layer covers the plurality of organic EL elements. An active layer is above a second portion of the first substrate that is different than the first portion. The active layer comprises a material that is at least one of hygroscopic and oxidizable. A second inorganic layer covers the active layer. A second substrate is opposite the first substrate, with the plurality of organic EL elements being between the first and second substrates. A seal extends between the first and second substrates to define a sealed space between the first and second substrates. The second inorganic layer includes through-holes that expose the active layer to the sealed space that is defined by the first substrate, the second substrate, and the seal.

Abstract: An improved method of fabricating a semiconductor light emitting diode (LED) is disclosed. The current blocking layer and the contact area for the n-type layer are implanted at the same time. In some embodiments, a dopant, which may be an n-type dopant, is implanted into a portion of the p-type layer to cause that portion to become either u-type or n-type. Simultaneously, the same dopant is implanted into at least a portion of the exposed n-type layer to increase its conductivity. After this implant, the dopant in both portions of the LED may be activated through the use of a single anneal cycle.

Abstract: Objects of the present invention are to provide novel anthracene derivatives and novel organic compounds; a light-emitting element that has high emission efficiency; a light-emitting element that is capable of emitting blue light with high luminous efficiency; a light-emitting element that is capable of operation for a long time; and a light-emitting device and an electronic device that have lower power consumption. An anthracene derivative represented by a general formula (1) and an organic compound represented by a general formula (17) are provided. A light-emitting element that has high emission efficiency can be obtained by use of the anthracene derivative represented by the general formula (1). Further, a light-emitting element that has a long life can be obtained by use of the anthracene derivative represented by the general formula (1).

Abstract: A deposition apparatus includes: a deposition source including a spray nozzle linearly arranged in a first direction and discharging a deposition material; and a pair of angle control members disposed at both sides of the deposition source and controlling a discharging direction angle of the deposition material. Each angle control member includes a rotation axis parallel to the first direction, and a plurality of shielding plates inst7lled about the rotation axis and separated from each other by a predetermined interval around the rotation axis. Although the deposition angle is changed according to the increasing of the process time, the deposition angle is compensated to form a uniform thin film. Also, the organic thin film may be uniformly deposited through each pixel of an organic light emitting diode (OLED) display, thereby increasing luminance uniformity for each pixel.

Abstract: A method for manufacturing an organic electroluminescent element including, in the following order, an anode, a light-emitting layer, an electron injection layer, and a cathode, the method including the steps of: (A) forming the anode; (B) forming the light-emitting layer; (C) forming the electron injection layer; and (D) forming the cathode, in which the step (C) includes (i) applying an application liquid containing an ionic polymer to form a thin film, (ii) heating the thin film formed, (iii) storing a partially finished organic electroluminescent element obtained in (ii), and thereafter, (iv) heating the thin film again.

Abstract: A novel organic material with fewer impurities, a light-emitting element including the organic material, and a light-emitting device, an electronic appliance, and a lighting device each of which includes the light-emitting element are provided. The organic material is obtained by coupling an aryl halide and an aryl boronic acid or an aryl boronic acid ester. The aryl boronic acid or the aryl boronic acid ester includes at least one of a first impurity in which a boryl group of the aryl boronic acid or the aryl boronic acid ester is substituted by hydrogen and a second impurity in which a molecular mass of 16 or 17 is added to the molecular mass of the first impurity. The concentration of an impurity other than the first impurity and the second impurity is 1% or lower.

Abstract: To provide a novel light-emitting device that can be manufactured with high productivity. In a light-emitting device in which a light-emitting diode (LED) layer is provided over a substrate, a metal oxide semiconductor (c-axis aligned crystalline oxide semiconductor (CAAC-OS)) substrate including a crystal part having a c-axis which is substantially perpendicular to a surface of the substrate is used as the substrate. The substrate may have either a single-layer structure of a CAAC-OS substrate or a structure in which a thin CAAC-OS substrate is stacked over a base substrate.

Abstract: Provided are a semiconductor laser manufacturing method and a semiconductor laser with a low device resistance. First, an active layer is deposited above a GaN substrate of a first conductivity type. A first guide layer made of GaN of a second conductivity type is deposited above the active layer. An AlN layer is deposited on the first guide layer. An opening is formed in the AlN layer. A first cladding layer made of a group-III nitride semiconductor of the second conductivity type is formed on the AlN layer and the first guide layer exposed through the opening such that a first growth rate at a start of growth on the first guide layer exposed through the opening becomes greater than a second growth rate at a start of growth on the AlN layer. A contact layer of the second conductivity type is formed on the first cladding layer.

Abstract: A method for improving internal quantum efficiency of a group-III nitride-based light emitting device is disclosed. The method includes the steps of: providing a group-III nitride-based substrate having a single crystalline structure; forming on the group-III nitride-based substrate an oxide layer, having a plurality of particles, without absorption of visible light, size, shape, and density of the particles are controlled by reaction concentration ratio of nitrogen/hydrogen, reaction time and reaction temperature; and growing a group-III nitride-based layer over the oxide layer; wherein the oxide layer prevents threading dislocation of the group-III nitride-based substrate from propagating into the group-III nitride-based layer, thereby improving internal quantum efficiency of the group-III nitride-based light emitting device.

Abstract: In an optical semiconductor device including a semiconductor laminated body including at least a light emitting layer, a first metal body including at least one first metal layer formed on the semiconductor laminated body, a support substrate, a second metal body including at least one second metal layer formed on the support substrate, and at least one adhesive layer formed in a surface side of at least one of the first and second metal bodies, the semiconductor laminated body is coupled to the support substrate by applying a pressure-welding bonding process upon the adhesive layer to form a eutectic alloy layer between the first and second metal bodies. At least one of the first and second metal layers has a triple structure formed by two tight portions and a coarse portion sandwiched by the tight portions.

Abstract: Nanoparticles may be formed on a substrate by mixing precursor solutions deposited by an inkjet printer. A first solution is deposited on a substrate from a first inkjet print cartridge. Then, a second solution is deposited on the substrate from a second inkjet print cartridge. The solutions may be printed in an array of droplets on the substrate. Nanoparticles form when droplets of the first solution overlap with droplets of the second solution. In one example, the nanoparticles may be gold nanoparticles formed from mixing a first solution of 1,2-dichlorobenze (DCB) and oleylamine and a second solution of gold chloride trihydrite and dimethyl sulfoxide (DMSO). The nanoparticles may be incorporated into optoelectronic devices.

Abstract: A method for manufacturing a semiconductor light emitting device is provided. The method includes forming a light emitting structure by sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a semiconductor growth substrate A support unit is disposed on the second conductivity-type semiconductor layer, so as to be combined with the light emitting structure. The semiconductor growth substrate is separated from the light emitting structure. An interface between the semiconductor growth substrate and a remaining light emitting structure is wet-etched such that the light emitting structure remaining on the separated semiconductor growth substrate is separated therefrom. The semiconductor growth substrate is cleaned.

Abstract: A method for producing an optoelectronic component includes: providing a substrate, applying a solution to a main side of the substrate, applying a standing ultrasonic field to the substrate and to the solution, curing and drying the solution to form a layer having a wavy top side facing away from the substrate, and applying a layer stack on the top side of the wavy layer, said layer stack being designed to generate light during the operation of the finished component.

Abstract: An organic light emitting device includes a substrate, a first electrode on the substrate, a second electrode, a first stack on the first electrode and including a hole injection layer, a first hole transport layer, a first mixed layer, a second hole transport layer, a first light emitting layer, and a first electron transport layer sequentially laminated, a second stack between the first stack and the second electrode and including a third hole transport layer, a fourth hole transport layer, a second light emitting layer, and a second electron transport layer sequentially laminated, and a charge generation layer between the first stack and the second stack to control charge balance between the first and second stacks. The first mixed layer includes materials used to form the first and second hole transport layers.

Abstract: An optoelectronic device comprising a charge transfer layer including a first semiconductive polymer comprising one or more zwitterions.

Abstract: A semiconductor emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

Abstract: Disclosed is a semiconductor light emitting element (1) which includes: plural n-side columnar conductor portions (183), each of which is provided by penetrating a p-type semiconductor layer (160) and a light emitting layer (150), and is electrically connected to an n-type semiconductor layer (140); an n-side layer-like conductor portion (184), which is disposed on the rear surface side of the p-type semiconductor layer (160) to face the surface of the light emitting layer (150) when viewed from the light emitting layer (150), and is electrically connected to the n-side columnar conductor portions (183); plural p-side columnar conductor portions (173), each of which is electrically connected to the p-type semiconductor layer (160); and a p-side layer-like conductor portion (174), which is disposed on the rear surface side of the p-type semiconductor layer (160) to face the light emitting layer (150) when viewed from the light emitting layer (150), and is electrically connected to the p-side columnar conductor

Abstract: A compound semiconductor device includes: a substrate; a GaN compound semiconductor multilayer structure disposed over the substrate; and a stress relief layer which is AlN-based and which is disposed between the substrate and the GaN compound semiconductor multilayer structure, wherein a surface of the stress relief layer that is in contact with the GaN compound semiconductor multilayer structure includes recesses that have a depth of 5 nm or more and that are formed at a number density of 2×1010 cm?2 or more.

Abstract: Provided is a method for manufacturing a semiconductor light-emitting element having a narrow wavelength distribution and comprising a substrate and a group III compound semiconductor layer formed thereon, the substrate being made of a material different from the compound semiconductor constituting the semiconductor layer. The method for manufacturing a semiconductor light-emitting element having a group III compound semiconductor layer is characterized by comprising a semiconductor layer-forming step wherein a group III compound semiconductor layer having a total thickness of not less than 8 ?m is formed on a substrate (11) having a diameter D, a thickness and an amount of warpage H within the range of ±30 ?m. The method is also characterized in that the diameter D and the thickness d of the substrate (11) satisfy the following formula (1): 0.7×102?(D/d)?1.5×102??(1).