Abstract: A semiconductor light emitting device having enhanced luminous efficiency and a manufacturing method thereof are provided. The semiconductor light emitting device includes: an n-type semiconductor layer having at least one pit formed in an upper surface thereof; an active layer formed on the n-type semiconductor layer, a region of the active layer corresponding to the pit having an upper surface bent along the pit; and a p-type semiconductor layer formed on the active layer, a region of the p-type semiconductor layer corresponding to the pit having an upper surface bent along the bent portion of the active layer.

Abstract: A composite substrate 10 includes a sapphire body 1A, a seed crystal film 4 composed of gallium nitride crystal and provided on a surface of the sapphire body, and a gallium nitride crystal layer 7 grown on the seed crystal film 4 and having a thickness of 200 ?m or smaller. Voids 5 are provided along an interface between the sapphire body 1A and the seed crystal film 4 in a void ratio of 4.5 to 12.5 percent.

Abstract: An organic light-emitting device with an electron transport layer disposed between the organic emission layer and the second electrode and comprising an anthracene-based compound and a carbazole-based compound represented by Formula 1 below: with improved efficiency and lifetime and a method for preparing the same are provided.

Abstract: A method of fabricating a patterned substrate, with which the optical performance of a photovoltaic cell including an organic solar cell and an organic light-emitting diode (OLED) can be improved. The method includes generating electrostatic force on a surface of a substrate by treating the substrate with electrolytes, causing nano-particles to be adsorbed on the surface of the substrate, etching the surface of the substrate using the nano-particles as an etching mask, and removing the nano-particles residing on the surface of the substrate.

Abstract: A nitride LED having improved light extraction efficiency and/or axial luminous intensity is provided. The nitride LED contains a nitride semiconductor substrate having, on a front face thereof, a light-emitting structure made of a nitride semiconductor, wherein a roughened region is provided on a back face of the substrate, the roughened region has a plurality of protrusions, each of the plurality of protrusions has a top point or top plane and has a horizontal cross-section which is circular, except in areas where the protrusion is tangent to other neighboring protrusions, and which has a surface area that decreases on approaching the top point or top plane, the plurality of protrusions are arranged such that any one protrusion is in contact with six other protrusions, and light generated in the light-emitting structure is output to the exterior through the roughened region.

Abstract: A method of growing an AlGaN semiconductor material utilizes an excess of Ga above the stoichiometric amount typically used. The excess Ga results in the formation of band structure potential fluctuations that improve the efficiency of radiative recombination and increase light generation of optoelectronic devices, in particular ultraviolet light emitting diodes, made using the method. Several improvements in UV LED design and performance are also provided for use together with the excess Ga growth method. Devices made with the method can be used for water purification, surface sterilization, communications, and data storage and retrieval.

Abstract: This document describes the fabrication and use of ceramic stabilizing layer fabricated right on the product silicon wafer to facilitate its use as a substrate for fabrication of gallium nitride films. A ceramic layer is formed and then attached to a single crystal silicon substrate to form a composite silicon substrate that has coefficient of thermal expansion comparable with GaN. The composite silicon substrates prepared by this invention are uniquely suited for use as growth substrates for crack-free gallium nitride films, benefiting from compressive stresses produced by choosing a ceramic having a desired higher coefficient thermal expansion than those of silicon and gallium nitride.

Abstract: Compound semiconductor devices and methods of doping compound semiconductors are provided. Embodiments of the invention provide post-deposition (or post-growth) doping of compound semiconductors, enabling nanoscale compound semiconductor devices including diodes and transistors. In one method, a self-limiting monolayer technique with an annealing step is used to form shallow junctions. By forming a sulfur monolayer on a surface of an InAs substrate and performing a thermal annealing to drive the sulfur into the InAs substrate, n-type doping for InAs-based devices can be achieved. The monolayer can be formed by surface chemistry reactions or a gas phase deposition of the dopant. In another method, a gas-phase technique with surface diffusion is used to form doped regions. By performing gas-phase surface diffusion of Zn into InAs, p-type doping for InAs-based devices can be achieved.

Abstract: An organic light-emitting apparatus includes a substrate; a first electrode formed on the substrate, where the first electrode is a cathode, an electron injection layer formed to contact an upper surface of the first electrode and including Mg, an intermediate layer formed on the electron injection layer and including an organic emission layer, and a second electrode which is formed on the intermediate layer and is an anode.

Abstract: A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage without crack being produced in a substrate is provided.

Abstract: A liquid composition (e.g., inkjet fluid) for forming an organic layer of an organic electronic device (e.g., an OLED). The liquid composition comprises a small molecule organic semiconductor material mixed in a solvent in which the solvent compound has the following formula: wherein R1 is C1-6 alkyl; R2 is C1-6 alkyl; and R3 is one or more optional substitutions independently selected from C1-6 alkyl and lower aryl.

Abstract: An organic light emitting display device includes a substrate in which a first pixel area and a second pixel area different from each other are defined, a first electrode, a pixel defining layer, a common layer, a first surface processing layer, a second surface processing layer, a first liquid solution layer, a second liquid solution layer, and a second electrode. The first surface processing layer has a first width and is correspondingly included in the first pixel area. The second surface processing layer has a second width different from the first width and is correspondingly included in the second pixel area. The first liquid solution layer has the first width, and the second liquid solution layer has the second width. The first and second liquid solution layers have the same volume and different thicknesses.

Abstract: An organic light emitting diode (OLED) display includes a substrate, a first signal line on the substrate, a first thin film transistor connected to the first signal line, a second thin film transistor connected to the first thin film transistor, an interlayer insulating layer on the first thin film transistor and the second thin film transistor, a second signal line on the interlayer insulating layer and connected to a source electrode of the first thin film transistor, a third signal line on the interlayer insulating layer and connected to a source electrode of the second thin film transistor, a first electrode on the interlayer insulating layer and connected to a drain electrode of the second thin film transistor, an organic emission layer on the first electrode, and a second electrode placed on the organic emission layer, wherein the third signal line and the first electrode are made of different metals.

Abstract: A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.

Abstract: The invention provides an OLED, a touch display device and method for fabricating the same. The OLED comprises: a substrate; a pixel electrode functioning as a first conducting electrode on the substrate; a first signal electrode and a second signal electrode disposed on the same layer as the pixel electrode; an insulating layer overlaying the first signal electrode and the second signal electrode; an EL layer in the same layer as the insulating layer and overlaying the pixel electrode; a second conducting electrode overlaying at least the EL layer; and an encapsulating layer overlaying at least the second conducting electrode.

Abstract: A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.

Abstract: An optoelectronic component (100) comprises a first semiconductor layer stack (101), which has an active layer (110) designed for the emission of radiation and a main area (111). A separating layer (103) is arranged on said main area, said separating layer forming a semitransparent mirror. The optoelectronic component comprises a second semiconductor layer stack (102), which is arranged at the separating layer and which has a further active layer (120) designed for the emission of radiation.

Abstract: A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

Abstract: A composite substrate for the formation of a light-emitting device, ensuring that a high-quality nitride-based light-emitting diode can be easily formed on its top surface and the obtained substrate-attached light-emitting diode functions as a light-emitting device capable of emitting light for an arbitrary color such as white, is provided.

Abstract: A method is provided for fabricating three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. After providing a substrate, the method grows a GaN film overlying a top surface of the substrate and forms cavities in a top surface of the GaN film. The cavities are formed using a laser ablation, ion implantation, sand blasting, or dry etching process. The cavities in the GaN film top surface are then wet etched, forming planar sidewalls extending into the GaN film. More explicitly, the cavities are formed into a c-plane GaN film top surface, and the planar sidewalls are formed perpendicular to a c-plane, in the m-plane or a-plane family.

Abstract: On a light-emitting layer, a p cladding layer of AlGaInN doped with Mg is formed at a temperature of 800° C. to 950° C. Subsequently, on the p cladding layer, a capping layer of undoped GaN having a thickness of 5 ? to 100 ? is formed at the same temperature as employed for a p cladding layer. Next, the temperature is increased to the growth temperature contact layer in the subsequent process. Since the capping layer is formed, and the surface of the p cladding layer is not exposed during heating, excessive doping of Mg or mixture of impurities into the p cladding layer is suppressed. The deterioration of characteristics of the p cladding layer is prevented. Then, on the capping layer, a p contact layer is formed at a temperature of 950° C. to 1100° C.

Abstract: The present invention relates to organic electroluminescent devices which comprise heteroaromatic compounds.

Abstract: Ink compositions comprising polythiophenes and methicone that are formulated for inkjet printing the hole injecting layer (HIL) of an organic light emitting diode (OLED) are provided. Also provided are methods of inkjet printing the HILs using the ink compositions.

Abstract: In a coating-type electron injection layer or electron transport layer using a metal oxide, the present invention aims at improving uniformity or stability of composition distribution and adhesion with another adjoining constituent layer, and improving film forming property, to thereby provide an organic electronic device and manufacture of the device whose efficiency is improved. In the organic electronic device having one pair of electrodes on a substrate, and having at least one organic layer between the electrodes, the electron injection layer or the electron transport layer is formed by application of a liquid material in which an alkaline metal salt and zinc-oxide nano particles are dissolved in alcohol.

Abstract: An organic light-emitting element having a high light extraction efficiency and a high light emission efficiency is provided, by an organic light-emitting element (10) including: a transparent anode layer (12) formed on a substrate (11); a first penetrating portion (16) formed to penetrate the anode layer (12); a dielectric layer (13) formed to cover an upper surface of the anode layer (12) and an inner surface of the first penetrating portion (16); a second penetrating portion (17) formed to penetrate the anode layer (12) and the dielectric layer (13); an organic compound layer (14) that includes a light emitting layer formed to cover at least an inner surface of the second penetrating portion (17); and a cathode layer (15) formed on the organic compound layer (14), wherein a refractive index of the dielectric layer (13) is lower than a refractive index of the anode layer (12).

Abstract: A transparent conductive electrode stack containing a work function adjusted zinc oxide is provided. Specifically, the transparent conductive electrode stack includes a layer of zinc oxide and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack shifts the work function of the layer of zinc oxide to a higher value for better hole injection into the OLED device as compared to a transparent conductive electrode that includes only a layer of zinc oxide and no work function modifying material.

Abstract: An organic light-emitting element includes a reflective anode, a first functional layer, an organic light-emitting layer that emits blue light, a second functional layer, a transparent cathode, and a coating layer. An optical thickness of the first functional layer is greater than 0 nm but not greater than 316 nm. A difference in refractive index between the transparent cathode and either a layer adjacent to the transparent cathode within the second functional layer or a layer adjacent to the transparent cathode within the coating layer is from 0.1 to 0.7 inclusive. The transparent cathode has a physical thickness greater than 0 nm but not greater than 70 nm, a refractive index from 2.0 to 2.4 inclusive, and an optical thickness greater than 0 nm but not greater than 168 nm.

Abstract: There is provided a method of manufacturing a semiconductor device, a semiconductor device, and a semiconductor apparatus, by which an electrode having an excellent ohmic property can be formed, and a semiconductor device having excellent device characteristics can be obtained with a high product yield.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a semiconductor structure may comprise: a first substrate structure; a III-nitride structure bonded with the first substrate structure; a plurality of air gaps formed between the first substrate structure and the III-nitride structure; and a III-oxide layer formed on surfaces around the air gaps, wherein a portion of the III-nitride structure including surfaces around the air gaps is transformed into the III-oxide layer by a selective photo-enhanced wet oxidation, and the III-oxide layer is formed between an untransformed portion of the III-nitride structure and the first substrate structure.

Abstract: A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S107, an AlN buffer layer 13 is grown. In step S108, at a time t5, a source gas G1 containing hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactor 10 to grow the AlN buffer layer 13 on a primary surface 11a. The AlN buffer layer 13 is so called a low-temperature buffer layer. After a start of film formation of the buffer layer 13, in step S109 supply of hydrogen (H2) is started at a time t6. At the time t6, H2, N2, TMA, and NH3 are supplied into the growth reactor 10. A supply amount of hydrogen is increased between times t6 and t7, and at the time t7 the increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t7, H2, TMA, and NH3 are supplied into the growth reactor 10.

Abstract: A growth method for reducing defect density of GaN includes steps of: sequentially forming a buffer growth layer, a stress release layer and a first nanometer cover layer on a substrate, wherein the first nanometer cover layer has multiple openings interconnected with the stress release layer; growing a first island in each of the openings; growing a first buffer layer and a second nanometer cover layer on the first island; and growing a second island to form a dislocated island structure. Thus, through the first nanometer cover layer and the second nanometer cover layer, multiple dislocated island structures can be directly formed to reduce manufacturing complexity as well as increase yield rate by decreasing manufacturing environment variation. Further, the epitaxial lateral over growth (ELOG) approach also effectively enhances characteristics of GaN optoelectronic semiconductor elements.

Abstract: The present invention relates to a compound of general formula (I) which can transport holes in an organic optoelectronic device, and to blends and solutions comprising the compound of general formula (I): wherein X is C, Si or Ge; A is a group of formula (II) wherein Z is N, P, NH, O or S; E is C1-10 alkyl or H; W is substituted or unsubstituted C5-14 aryl or substituted or unsubstituted C6-16 alkyl; e is an integer from 1 to 4; and z is 1 or 2; B, C and D are each independently A, H, C1-C12 alkyl, C5-14 aryl or OH; and a, b, c and d are each independently an integer from 1 to 5.

Abstract: A method of manufacturing an organic EL element includes: a first step of forming a lower electrode on a substrate; a second step of forming an organic functional layer on the lower electrode; and a third step of forming an upper electrode on the organic functional layer, wherein the third step includes: a first film-forming step of forming a thin film on the organic functional layer by magnetron sputtering, the thin film being formed of material of the upper electrode; and a second film-forming step of forming, after the first film-forming step, another thin film by a film-forming process different from the magnetron sputtering on the thin film formed in the first film-forming step, said another thin film being formed of the material of the upper electrode.

Abstract: A region of a device is provided that includes a first material and a second material. The first and second materials may be co-dopants of an emissive material or region. The first material may have an energy gap of not more than about 100 meV between the first excited singlet state and the first excited triplet state. Excitons that transition to the T1 state can be activated to the S1 state due to the relatively small energy gap. This thermal activation process is fast enough that non-radiative decay from the T1 state to the S0 state is minimal or negligible, thus allowing for sensitization up to and including 100%. The second material may be a phosphorescent-capable material, and may act as a sensitizer to the first material.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer of an n type including a nitride semiconductor, a first metal layer of an alloy containing Al and Au, and a second metal layer. The first metal layer is in contact with the first semiconductor layer. The second metal layer is in contact with the first metal layer. The second metal layer includes a metal different from Al. The first metal layer is disposed between the second metal layer and the first semiconductor layer.

Abstract: Techniques for fabricating organic light emitting devices, and devices fabricating using the disclosed techniques, are provided. In the disclosed techniques, a layer including an emissive material and a buffer material may be deposited in a single laser transfer process, such as a laser-induced thermal imaging process. The emissive and buffer materials may be deposited in discrete layers during the transfer process. Examples of buffer materials as disclosed include blocking materials, transfer materials, and the like. Additional layers may be deposited using conventional techniques or additional laser transfer processes.

Abstract: A method of manufacturing an organic EL element having a pair of electrodes and an organic functional layer disposed therebetween, the pair of electrodes consisting of an upper electrode and a lower electrode, comprising: forming the upper electrode on the organic functional layer by a magnetron sputtering method with a film-forming power density no less than 4.5 W/cm2 and no greater than 9.0 W/cm2.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can prepare a substrate unit including a base substrate, an intermediate crystal layer, and a first mask layer. The intermediate crystal layer has a major surface having a first region, a second region, and a first intermediate region. The first mask layer is provided on the first intermediate region. The method can implement a first growth to grow a first lower layer on the first region and grow a second lower layer on the second region. The first and second lower layers include a semiconductor crystal. The method can implement a second growth to grow a second upper layer while growing a first upper layer to cover the first mask layer with the first and second upper layers. The method can implement cooling to separate the first and second upper layers.

Abstract: The organic electroluminescence display device has a laminated portion on a base substrate. The device may have a cavernous portion formed by exploding a part of the laminated portion in a screening processing. A protective layer is formed to cover a whole surface of a wall defining the cavernous portion. Therefore, substances contained in the air are prevented from contacting to an organic electroluminescence layer at least partially defining the cavernous portion. Therefore, even if moisture is contained in the air, it is possible to prevent moisture from being absorbed by the organic electroluminescence layer. Moreover, since moisture is not absorbed by the organic electroluminescence layer, it is possible to reduce irregular spot on the device. In addition, it is possible to reduce a short circuit at an open defective portion.

Abstract: There is provided an organic light-emitting diode luminaire. The luminaire includes a first electrode, a second electrode, and an electroluminescent layer therebetween. The electroluminescent layer includes: a first electroluminescent material having an emission color that is blue-green; and a second electroluminescent material having an emission color that is red/red-orange. The additive mixing of the emitted colors results in an overall emission of white light.

Abstract: A manufacturing method of an LED chip includes the following steps: providing a substrate; forming a light emitting layer comprising an n-type semiconductor layer and a p-type semiconductor layer on the substrate; forming a pair of electrodes electrically connected the n-type semiconductor layer and the p-type semiconductor layer, respectively; connecting a bonding wire to one of the electrodes by adding melted metal to a portion of a top surface of the electrode, a ratio between an area of the portion of the top surface of the electrode and the top surface of the electrode being no less 6:10; and solidifying the melted metal to form a bonding pad to connect the bonding wire and the electrode together.

Abstract: Novel combination of materials and device architectures for organic light emitting devices are provided. In some aspects, specific charge carriers and solid state considerations are features that may result in a device having an unexpectedly long lifetime. In some aspects, emitter purity is a feature that may result in devices having unexpectedly long lifetime. In some aspects, structural and optical considerations are features that may result in a device having an unexpectedly long lifetime. In some aspects, an emissive layer including an organic phosphorescent emissive dopant and an organic carbazole host material results in devices having an unexpectedly long lifetime.

Abstract: A method for manufacturing a semiconductor light emitting element comprises steps of forming a semiconductor layer composed of a Group III nitride based compound semiconductor on a principal surface of a substrate; forming a transparent conductive metal oxide film on the semiconductor layer; forming an electrode above the transparent conductive metal oxide film; forming a mask layer for covering a part of the transparent conductive metal oxide film; and heat treating the transparent conductive metal oxide film having the mask layer formed thereon in an oxygen-containing atmosphere; wherein, in the heat treatment step, an oxygen concentration of a remaining part of the transparent conductive metal oxide film which is not covered by the mask layer is made higher than an oxygen concentration of a part of the transparent conductive metal oxide film which is covered by the mask layer.

Abstract: An organic light emitting diode display including a substrate, a first electrode on the substrate, a light-emitting layer on the first electrode, a second electrode on the light-emitting layer, and a p-doping layer between the first electrode and the light-emitting layer.

Abstract: A photonic-crystal surface-emitting laser (PCSEL) includes a gain medium electromagnetically coupled to a photonic crystal whose energy band structure exhibits a Dirac cone of linear dispersion at the center of the photonic crystal's Brillouin zone. This Dirac cone's vertex is called a Dirac point; because it is at the Brillouin zone center, it is called an accidental Dirac point. Tuning the photonic crystal's band structure (e.g., by changing the photonic crystal's dimensions or refractive index) to exhibit an accidental Dirac point increases the photonic crystal's mode spacing by orders of magnitudes and reduces or eliminates the photonic crystal's distributed in-plane feedback. Thus, the photonic crystal can act as a resonator that supports single-mode output from the PCSEL over a larger area than is possible with conventional PCSELs, which have quadratic band edge dispersion. Because output power generally scales with output area, this increase in output area results in higher possible output powers.

Abstract: A device, such as an electroluminescent device, comprising (i) a transparent conductor; (ii) a metal grid disposed on said transparent conductor; and (iii) said metal grid is not covered by an insulator, but by a hole injection layer comprising at least one conjugated polymer and at least one matrix polymer. Methods for making the electroluminescent device are also disclosed.

Abstract: (a) On a growth substrate, a void-containing layer that is made of a group III nitride compound semiconductor and contains voids is formed. (b) On the void-containing layer, an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids is formed. (c) On the n-type layer, an active layer made of a group III nitride compound semiconductor is formed. (d) On the active layer, a p-type layer made of a p-type group III nitride compound semiconductor is formed. (e) A support substrate is bonded above the p-type layer. (f) The growth substrate is peeled off at the boundary where the voids are produced. In the above step (a) or (b), the supply of at least part of the materials that form the layer is decreased, while heating, before the voids are closed.

Abstract: A method for manufacturing a semiconductor thin film device includes: forming a buffer layer on an Si (111) substrate and a single crystal semiconductor layer on the buffer layer; forming an island including the semiconductor layer, buffer layer, and a portion of the substrate; forming a coating layer on the island; etching the substrate along its Si (111) plane to release the island from the substrate, the coating layer serving as a mask; and bonding the released island to another substrate, a released surface of the released island contacting the another substrate. A semiconductor device includes a single crystal semiconductor layer other than Si, which has a semiconductor device formed on a front surface of an Si (111) layer lying in a (111) plane. The layer is bonded to another substrate with a back surface contacting the another substrate or a bonding layer formed on the another substrate.

Abstract: A method of LED manufacturing is disclosed. A coating is applied to a mesa. This coating may have different thicknesses on the sidewalls of the mesa compared to the top of the mesa. Ion implantation into the mesa will form implanted regions in the sidewalls in one embodiment. These implanted regions may be used for LED isolation or passivation.

Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.