Abstract: Disclosed are new methods of fabricating metal oxide thin films and nanomaterial-derived metal composite thin films via solution processes at low temperatures (<400° C.). The present thin films are useful as thin film semiconductors, thin film dielectrics, or thin film conductors, and can be implemented into semiconductor devices such as thin film transistors and thin film photovoltaic devices.

Abstract: A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.

Abstract: Disclosed are new methods of fabricating metal oxide thin films and nanomaterial-derived metal composite thin films via solution processes at low temperatures (<400° C.). The present thin films are useful as thin film semiconductors, thin film dielectrics, or thin film conductors, and can be implemented into semiconductor devices such as thin film transistors and thin film photovoltaic devices.

Abstract: An electrically conductive film suited to use as a transparent anode, a method of forming the film, and an electronic device comprising the film are disclosed. The device includes a conductive polymer electrode defining first and second surfaces and having an electrical conductivity gradient between the first and second surfaces. A second electrode is spaced from the second surface by at least one organic material layer, such as a light emitting layer.

Abstract: Provided is a nitride semiconductor light-emitting element having a low contact resistance between an n-type nitride semiconductor layer and an n-side electrode. A portion of the n-type nitride semiconductor layer is removed by a plasma etching process using a gas containing halogen to expose a surface region 102a of the n-type nitride semiconductor layer 102. Next, such an exposed surface region 102a is further subjected to a plasma treatment using a gas containing oxygen. After that, the n-side electrode 109 formed of aluminum is formed so as to be in contact with the surface region 102a. In the surface region 102a, a carrier concentration is decreased from the inside of the n-type nitride semiconductor layer 102 toward the n-side electrode 109.

Abstract: The example embodiments provide a thin film deposition apparatus for deposition of an organic material having a low volatility characteristic, and a method for manufacturing an OLED display using the same. A thin film deposition apparatus includes a crucible assembly evaporating an organic material toward a substrate, and a pattern mask provided in one side of the substrate facing the crucible assembly. The crucible assembly includes a crucible coupled with the heater and containing an organic material therein, and a guide pipe coupled to an entrance of the crucible and forming an inner space extended in one direction toward the substrate from the entrance of the crucible.

Abstract: A light emitting device comprises a substrate, a semiconductor body, and a transition layer. The semiconductor body is configured to generate light and comprises an n-type layer disposed on the substrate, a p-type layer disposed on the n-type layer, and an active layer disposed between the n-type layer and the p-type layer. The transition layer is disposed on the substrate and located between the n-type layer and the substrate, and comprises a plurality of sub-layers. The plurality of the sub-layers comprise compositions different from each other, and each sub-layer comprise the composition including IIIA metal, transition metal, and nitrogen. The light emitting device further comprises a p-contact layer disposed on the p-type layer of the semiconductor body. A substrate structure and a method for making the light emitting device are also presented.

Abstract: An organic light-emitting diode display includes a substrate, a first electrode which is disposed on the substrate, a trench defined in a top surface of the first electrode, and a hole injection layer which is disposed in the trench.

Abstract: An OLED device, comprising: a first electrode (10), a second electrode (11) and an organic thin film layer (13); the organic thin film layer comprises a hole layer (103), an electron layer (104) and an organic light emitting layer (105) located between the hole layer (103) and the electron layer (104); and the organic thin film layer (13) further comprises a hole blocking layer (12). The organic light emitting layer (105) comprises a first light emitting unit (1051), a second light emitting unit (1052) and a third light emitting unit (1053). A manufacturing method of an OLED device and a display apparatus comprising an OLED device are provided.

Abstract: The present invention relates to a vertical-structure semiconductor light emitting device and a production method thereof, more specifically, to a vertical-structure semiconductor light emitting device having a high-performance heat sink support comprising a thick metal film or metal foil. The vertical-structure semiconductor light emitting element produced in accordance with the present invention constitutes a highly reliable light emitting element with absolutely no thermal or mechanical damage since it has the high performance heatsink support and so suffers not fine micro-cracking and can be freely subjected to heat treatment and to post-processing including of a side-surface passivation thin film.

Abstract: A method of applying a conversion means to an optoelectronic semiconductor chip includes preparing the optoelectronic semiconductor chip having a main radiation face, preparing the conversion means, the conversion means being applied to a main carrier face of a carrier, arranging the conversion means such that it faces the main radiation face and has a spacing relative to the main radiation face, and releasing the conversion means from the carrier and applying the conversion means to the main radiation face by irradiation and heating of an absorber constituent of the conversion means and/or of a release layer located between the conversion means and the carrier with a pulsed laser radiation which passes through the carrier.

Abstract: An opto-electric device includes an opto-electric layer structure having an anode and a cathode layer and an opto-electric layer arranged between the anode and cathode layers, and having a light-transmission side. A dual electrically conductive layer structure is arranged at a side of the opto-electric layer structure opposite the light-transmission side, the dual electrically conductive layer structure having a first and a second electrically conductive layer mutually insulated by a first electrically insulating layer. A second electrically insulating layer is arranged between the light emitting layer structure and the dual electrically conductive layer structure, wherein the first electrically conductive layer is electrically connected by at least a first transverse electrical conductor with the anode layer and the second electrically conductive layer is electrically connected by at least a second transverse electrical conductor with the cathode layer.

Abstract: A method of manufacturing an OLED device, a semi-finished product, and a OLED are described herein. In one embodiments, the method comprises providing an electrically conductive carrier substrate with a first carrier surface and a second carrier surface, assembling at least the first carrier surface a patterned layer of insulating material over an integral area, the layer of insulating material being patterned by a plurality of holes such that an electric access to the first carrier surface is possible, assembling a patterned conductive coating on the insulating material such that the conductive coating enters the holes and covers the insulating material, whereby the conductive coating is patterned such that a number of discrete first electrode areas are formed in the conductive coating, applying an organic light-emitting layer above at least one first electrode area, applying a second electrode layer above the organic light emitting layer.

Abstract: A method of fabricating a patterned substrate, with which the optical performance of a photovoltaic cell including an organic solar cell and an organic light-emitting diode (OLED) can be improved. The method includes generating electrostatic force on a surface of a substrate by treating the substrate with electrolytes, causing nano-particles to be adsorbed on the surface of the substrate, etching the surface of the substrate using the nano-particles as an etching mask, and removing the nano-particles residing on the surface of the substrate.

Abstract: Disclosed is an organic light emitting diode device fabrication method that includes: preparing a substrate which is defined into a display area and a non-display area; forming a light emission portion, which includes a thin film transistor and an organic light emission layer in the display area, and a pad portion in a part of the non-display area; sequentially forming a sacrificial layer and an encapsulation passivation film throughout the display and non-display areas; and separating the sacrificial layer and the encapsulation passivation film from the pad portion through an irradiation of laser light.

Abstract: A method of manufacturing an organic light-emitting display device is provided. The method includes forming a pixel electrode, forming a hydrophobic material layer on the pixel electrode, wherein the hydrophobic material layer includes a hydrophobic material, forming a pixel-defining layer by patterning the hydrophobic material layer, so as to expose at least a portion of the pixel electrode, and removing the hydrophobic material on the exposed portion of the pixel electrode using surface treatment.

Abstract: Objects of the present invention are to provide novel anthracene derivatives and novel organic compounds; a light-emitting element that has high emission efficiency; a light-emitting element that is capable of emitting blue light with high luminous efficiency; a light-emitting element that is capable of operation for a long time; and a light-emitting device and an electronic device that have lower power consumption. An anthracene derivative represented by a general formula (1) and an organic compound represented by a general formula (17) are provided. A light-emitting element that has high emission efficiency can be obtained by use of the anthracene derivative represented by the general formula (1). Further, a light-emitting element that has a long life can be obtained by use of the anthracene derivative represented by the general formula (1).

Abstract: An organic light emitting diode device includes a first electrode, a second electrode, an organic emission layer, an electron transport layer and a buffer layer. The second electrode is opposite to the first electrode. The organic emission layer is located between the first and second electrodes. The electron transport layer is located between the organic emission layer and the second electrode. The buffer layer is located between the organic emission layer and the electron transport layer, and is made of at least one material selected from a pyrene compound represented by the following Chemical Formula 1, an anthracene compound represented by the following Chemical Formula 2 and a combination thereof: Here, the definitions of R1, R2 and A are as described in the specification.

Abstract: An OLED formed on a glass or plastic substrate includes an anode, a cathode, and at least one light emitting layer between the anode and cathode. Additional layers may include hole transporting, electron transporting, hole blocking and electron blocking layers.

Abstract: According to embodiments of the present invention, a full-color organic light-emitting device has high reliability. The organic light-emitting device is manufactured using a simple and inexpensive manufacturing process.

Abstract: The present invention is made to provide a transparent electrode having both electrical conductivity and light transmissibility, and improve the performance of an electronic device and an organic electroluminescence element. A transparent electrode (1) includes a nitrogen-containing layer (1a) and an electrode layer (1b) formed adjacent to the nitrogen-containing layer (1a). The electrode layer (1b) is formed using silver or an alloy having silver as a main component. The nitrogen-containing layer (1a) is composed of a compound that satisfies Formulas (1) and (2).

Abstract: Aspects of the invention provide methods and devices. In one embodiment, the invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanopyramids are grown utilizing a CVD based selective area growth technique. The nanopyramids are grown directly or as core-shell structures.

Abstract: The invention relates to an OLEEC component and to a production process therefor. This component has an active layer including a novel emitter complex. This complex is formed by the coordination of low molecular weight semiconductors around a central cation. The complexation allows wet-chemical processing of low molecular weight semiconductors. This also allows formation of emitter complexes from effective hole or electron transport materials.

Abstract: Provided is a method and an apparatus for manufacturing an organic EL device which make it possible to manufacture organic EL devices capable of suppressing quality degradation. The method for manufacturing an organic EL device, in which constituent layers of an organic EL element are formed over a substrate in the form of a strip by deposition, while the substrate is being moved in the longitudinal direction, includes: a constituent layer-forming step of performing deposition over one surface of the substrate, while the substrate is being moved in the longitudinal direction, sequentially in an upward deposition unit and a lateral deposition unit provided along the moving direction of the substrate by discharging a vaporized material from an evaporation source. The constituent layer-forming step includes an upward deposition step, a laterally deposition step, and a direction changing step.

Abstract: A method for manufacturing a distributed feedback laser array includes: forming a bottom separate confinement layer on a substrate; forming a quantum-well layer on the bottom separate confinement layer; forming a selective-area epitaxial dielectric mask pattern on the quantum-well layer; forming a top separate confinement layer on the quantum-well layer through selective-area epitaxial growth using the selective-area epitaxial dielectric mask pattern, the top separate confinement layer having different thicknesses for different laser units; removing the selective-area epitaxial dielectric mask pattern; forming an optical grating on the top separate confinement layer; and growing a contact layer on the optical grating. The present disclosure achieves different emission wavelengths for different laser units without significantly affect emission performance of the quantum-well material.

Abstract: An organic electronic device is provided. The organic electronic device includes a substrate and an organic fiber disposed on the substrate. Material patterns are disposed on exposed surfaces of the substrate at both sides of the organic fiber and separated by the organic fiber. By arranging the organic fiber and then coating the organic fiber with a material layer to form material patterns separated by the organic fiber, very simple, fast, and sufficient separation of patterns may be implemented with no complicated process such as a lithography process, used in the art.

Abstract: An organic electroluminescent element including: a lower electrode; an organic functional layer on the lower electrode; and an upper electrode on the organic functional layer, wherein profile of an upper surface of the upper electrode has a skewness of between ?0.5 and 0.7 inclusive.

Abstract: Provided are single photon devices, single photon emitting and transferring apparatuses, and methods of manufacturing and operating the single photon devices. The single photon device includes a carrier transport layer disposed on a conductive substrate and at least one quantum dot disposed on the carrier transport layer. A single photon emitting and transferring apparatus includes a single photon device, an element that injects a single charge into the single photon device described above, a light collecting unit that collects light emitted from the single photon device, and a light transfer system that transmits light collected by the light collecting unit to the outside.

Abstract: A semiconductor device that can suppress deterioration in crystal quality caused by a lattice mismatch between a substrate and an epitaxial layer and that also can ensure a voltage sustaining performance, and a wafer for forming the semiconductor device. An epitaxial wafer of silicon carbide (SiC), which is used for manufacturing a semiconductor device, includes a low resistance substrate and an epitaxial layer provided thereon. The epitaxial layer is doped with the same dopant as a dopant doped into the substrate, and has a laminated structure including a low concentration layer and an ultrathin high concentration layer. A doping concentration in the low concentration layer is lower than that in the silicon carbide substrate. A doping concentration in the ultrathin high concentration layer is equal to that in the silicon carbide substrate.

Abstract: Disclosed is an organic electroluminescence device which can be stably produced by a wet process and exhibits enhanced external quantum efficiency and reduced coating unevenness and a production method thereof. Specifically, disclosed is a method of producing the organic electroluminescence device comprising at least a layer, which is formed by a wet process comprising of coating a solution of an organic material dissolved in a solvent to form a liquid layer, followed by removal of the solvent by blowing air to form the layer, wherein the relative drying rate of the solvent to butyl acetate is from 1 to 1000, (based on the drying rate of butyl acetate being 100), the thickness of the formed liquid layer is from 1 to 100 ?m, a air-blowing rate is from 0.1 to 5 m/s and the time between completion of coating and start of blowing is from 0 to 60 sec.

Abstract: An organic layer deposition apparatus includes: a conveyer unit including a transfer unit, a first conveyer unit, and a second conveyer unit; a loading unit for fixing a substrate to the transfer unit; a deposition unit including a chamber and at least one organic layer deposition assembly; and a measuring unit located between the loading unit and the deposition unit to measure position information of the substrate before an organic layer is deposited onto the substrate; and an unloading unit for separating, from the transfer unit, the substrate onto which the deposition has been completed, wherein the transfer unit is configured to cyclically move between the first conveyer unit and the second conveyer unit, and wherein the substrate fixed to the transfer unit is configured to be spaced apart from the at least one organic layer deposition assembly while being transferred by the first conveyer unit.

Abstract: A method of manufacturing an organic light emitting structure is provided as follows. A first electrode is formed on a lower substrate. A pixel defining layer is formed adjacent to the first electrode on the lower substrate. A preliminary charge transport layer is formed on the first electrode and the pixel defining layer. An organic light emitting layer is formed on the preliminary charge transport layer. The preliminary charge transport layer is selectively etched to form a charge transport layer. A second electrode is formed on the organic light emitting layer.

Abstract: A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.

Abstract: Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the compound semiconductor on a substrate.

Abstract: A manufacturing process of a vertical type solid state light emitting device is provided. A substrate is provided. M metal nitride buffer layer is formed on the substrate, and a breakable structure containing M metal droplet structures is formed on the buffer layer. A first type semiconductor layer, an active layer and a second type semiconductor layer are sequentially formed on the breakable structure. A second type electrode is formed on the second type semiconductor layer. The first type semiconductor layer, the active layer, the second type semiconductor layer and the second type electrode are stacked to form a light emitting stacking structure. The breakable structure is damaged to separate from the light emitting stacking structure, so that a surface of the first type semiconductor layer of the light emitting stacking structure is exposed. A first type electrode is formed on the surface of the first type semiconductor layer.

Abstract: An organic light-emitting device comprising an anode; a cathode; a first light-emitting layer between the anode and the cathode; and a second light-emitting layer between the first light-emitting layer and the cathode, wherein: the first light-emitting layer comprises a hole-transporting material and a first phosphorescent material, the second light-emitting layer comprises a second phosphorescent material; and the lowest triplet excited state energy level of the hole-transporting material is: (a) lower than the lowest triplet excited state of the second phosphorescent material, and (b) the same as or higher than the lowest triplet excited state energy level of the first phosphorescent material.

Abstract: Disclosed herein are a ZnO film structure and a method of forming the same. Dislocation density of a ZnO film grown through epitaxial lateral overgrowth (ELOG) is minimized. In order to block a chemical reaction between the ZnO film and a mask layer at the time of performing the ELOG, a material of the mask layer is AlF3, NaF2, SrF, or MgF2. Therefore, the chemical reaction between ZnO and the mask layer is blocked and a transfer of dislocation from a substrate is also blocked.

Abstract: An optoelectronic device, comprising: a first organic functional layer structure; a second organic functional layer structure; and a charge generating layer structure between the first organic functional layer structure and the second organic functional layer structure, wherein the charge generating layer structure comprises: a first electron-conducting charge generating layer; wherein the first electron-conducting charge generating layer comprises or is formed from an intrinsically electron-conducting substance; a second electron-conducting charge generating layer; and an interlayer between first electron-conducting charge generating layer; and second electron-conducting charge generating layer; and wherein the interlayer comprises at least one phthalocyanine derivative.

Abstract: There is provided an organic EL apparatus as an electro-optic apparatus including: a substrate; a light-emitting element that is provided at a first area of the substrate; a guard line that is provided to surround the first area; and a sealing film or a sealing structure that covers the first area and reaches the guard line.

Abstract: A negative photosensitive resin composition including a novolac resin (A), a photoacid generator (B), a basic compound (C), a cross-linking agent (D), and a solvent (E) is provided. The novolac resin (A) includes a hydroxy-type novolac resin (A-1) and a xylenol-type novolac resin (A-2). The hydroxy-type novolac resin (A-1) is synthesized by polycondensing a hydroxybenzaldehyde compound and an aromatic hydroxy compound. The xylenol-type novolac resin (A-2) is synthesized by polycondensing an aldehyde compound and a xylenol compound.

Abstract: A method of forming an organic layer includes supplying a liquefied organic material, drying the liquefied organic material, supplying a solvent to an intermediate organic layer to swell the intermediate organic layer, and drying the swelled organic layer. The organic layer is formed to have a uniform thickness when the organic layer is formed by a solution-based printing method.

Abstract: In one embodiment, a method of growing a heteroepitaxial layer comprises providing a patterned substrate containing patterned features having sidewalls. The method also includes directing ions toward the sidewalls in an exposure, wherein altered sidewall regions are formed, and depositing the heteroepitaxial layer under a set of deposition conditions effective to preferentially promote epitaxial growth on the sidewalls in comparison to other surfaces of the patterned features.

Abstract: A display panel may include an organic light emitting diode, a first film disposed on the organic light emitting diode and a second film comprising a fluoro polymer and disposed on the first film.

Abstract: To provide a highly reliable light-emitting device and especially a light-emitting device which can be formed without use of a metal mask and includes a plurality of light-emitting elements. A structural body at least an end of which has an acute-angled shape is provided so that the end can pass downward through an electrically conductive film formed over the insulating layer and can be at least in contact with an insulating layer having elasticity, thereby physically separating the electrically conductive film, and the electrically conductive films are thus electrically insulated from each other. Such a structure may be provided between adjacent light-emitting elements so that the light-emitting elements can be electrically insulated from each other in the light-emitting device.

Abstract: The present invention relates to an organic light-emitting display device and a method of fabricating the same. The device may include a base substrate, a thin-film transistor disposed on the base substrate, an organic light-emitting device including a first electrode connected to the thin-film transistor, an organic pattern disposed on the first electrode, and a second electrode disposed on the organic pattern. The device further includes an auxiliary electrode including a connection part and a non-connection part, the connection part being connected to the second electrode. The width of the connection part may be less than that of the non-connection part, when measured in the direction perpendicular to a current flow.

Abstract: A method of manufacturing an organic light-emitting diode display includes disposing a first electrode on a substrate on which a plurality of transistors is disposed, disposing a pixel definition layer on the substrate to cover a part of the first electrode, disposing a solvent layer on the first electrode, disposing an organic layer on the pixel definition layer and the solvent layer, removing the solvent layer and disposing a second electrode on the organic layer.

Abstract: There is provided a process for forming a contained second layer over a first layer, including the steps: forming the first layer including a fluorinated material and having a first surface energy; treating the first layer with a priming layer; exposing the priming layer patternwise with radiation having a wavelength greater than 300 nm, resulting in exposed areas and unexposed areas; developing the priming layer to effectively remove the priming layer from the unexposed areas resulting in a first layer having a patterned priming layer, wherein the patterned priming layer has a second surface energy that is higher than the first surface energy; and forming the second layer by liquid deposition on the patterned priming layer on the first layer. The priming layer includes an aromatic amine compound and a photoinitiator.

Abstract: A deposition apparatus includes a first nozzle configured to spray a first deposition material toward a substrate and a second nozzle configured to spray a second deposition material, a first deposition source configured to supply the first deposition material to the first nozzle and a second deposition source configured to supply the second deposition material to the second nozzle. The deposition apparatus further includes a barrier member disposed between the first nozzle and the second nozzle and is configured to block the first deposition material evaporated through the first nozzle from being mixed with the second deposition material evaporated through the second nozzle and a vacuum chamber configured to surround the first and second nozzles, the first and second deposition sources and the barrier member.

Abstract: A device for depositing an organic material includes a substrate; a mask having an opening portion and a shield portion; a fixing member for fixing the substrate and the mask to each other; a deposition source comprising a plurality of nozzles arranged in a first direction and configured to spray the organic material; and a plurality of shield plates near the plurality of nozzles on the deposition source. An angle ? between the substrate and a line extended from a distal end of one of the nozzles to a center of a distal end of a corresponding one of the shield plates is greater than or equal to a taper angle ? of the shield portion of the mask.

Abstract: An organic light-emitting display apparatus and a method of manufacturing the same. The organic light-emitting display apparatus includes an organic light-emitting device in which a pixel electrode, an intermediate layer that includes an emissive layer, and a cathode electrode are sequentially stacked. The cathode contact unit includes a cathode bus line that is formed on the same layer as the pixel electrode and contacts the cathode electrode, a first auxiliary electrode that is formed on the cathode bus line along an edge area of the cathode bus line, and a second auxiliary electrode that contacts the first auxiliary electrode.