Abstract: A method of manufacturing a semiconductor device includes forming a fin structure over a substrate, forming a sacrificial gate structure over the fin structure, and etching a source/drain (S/D) region of the fin structure to form an S/D recess. The fin structure includes first semiconductor layers and second semiconductor layers alternately stacked. The method further includes depositing an insulating dielectric layer in the S/D recess, depositing an etch protection layer over a bottom portion of the insulating dielectric layer, and partially removing the insulating dielectric layer. The method further includes growing an epitaxial S/D feature in the S/D recess. The bottom portion of the insulating dielectric layer interposes the epitaxial S/D feature and the substrate.

Abstract: A method for fabricating a semiconductor device includes receiving a silicon substrate having an isolation feature disposed on the substrate and a well adjacent the isolation feature, wherein the well includes a first dopant. The method also includes etching a recess to remove a portion of the well and epitaxially growing a silicon layer (EPI layer) in the recess to form a channel, wherein the channel includes a second dopant. The method also includes forming a barrier layer between the well and the EPI layer, the barrier layer including at least one of either silicon carbon or silicon oxide. The barrier layer can be formed either before or after the channel. The method further includes forming a gate electrode disposed over the channel and forming a source and drain in the well.

Abstract: A P-type field effect transistor (PFET) device and a method for fabricating a PFET device using fully depleted silicon on insulator (FDSOI) technology is disclosed. The method includes introducing germanium into the channel layer using ion implantation. This germanium implant increases the axial stress in the channel layer, improving device performance. This implant may be performed at low temperatures to minimize damage to the crystalline structure. Further, rather than using a long duration, high temperature anneal process, the germanium implanted in the channel layer may be annealed using a laser anneal or a rapid temperature anneal. The implanted regions are re-crystallized using the channel layer that is beneath the gate as the seed layer. In some embodiments, an additional oxide spacer is used to further separate the raised source and drain regions from the gate.

Abstract: A method of implanting an implant species into a substrate at different depths is described. The method includes forming an implant mask over the substrate. The implant mask includes a first implant zone designed as an opening and a second implant zone designed as a block array. The implant species is implanted through the implant mask under an implant angle tilted against a block plane, such that a first implant area is formed by the implant species at a first depth in the substrate beneath the first implant zone and a second implant area is formed by the implant species at a second depth in the substrate beneath the second implant zone. The first depth is greater than the second depth.

Abstract: A structure includes a semiconductor substrate, and a polycrystalline resistor region over the semiconductor substrate. The polycrystalline resistor region includes a semiconductor material in a polycrystalline morphology. A dopant-including polycrystalline region is between the polycrystalline resistor region and the semiconductor substrate.

Abstract: The present disclosure provides a method for forming a semiconductor device containing MOS transistors both with and without source/drain extension regions in a semiconductor substrate having a semiconductor material on either side of a gate structure including a gate electrode on a gate dielectric formed in a semiconductor material. In devices with source/drain extensions, a diffusion suppression species of one or more of indium, carbon and a halogen are used. The diffusion suppression implant can be selectively provided only to the semiconductor devices with drain extensions while devices without drain extensions remain diffusion suppression implant free.

Abstract: A piezoelectric substrate manufacturing device that includes first and electrodes that face each other with a piezoelectric substrate interposed therebetween; a cover that surrounds the second electrode such that the leading end of the second electrode is exposed; a supply unit that supplies a processing gas to an internal space of the cover; a processing unit that performs surface processing on the piezoelectric substrate by applying a voltage between the first and second electrodes causing the processing gas to change into plasma; a detector that is provided outside the cover with its relative position fixed with respect to the second electrode; a measurement unit that measures the thickness of the piezoelectric substrate using the detector; a driving unit that changes the relative positions of the first and second electrodes; and a control unit that controls the supply unit, the processing unit, the measurement unit, and the driving unit.

Abstract: A method for fabricating a semiconductor device includes providing a substrate including a cell region and a core/peripheral region around the cell region, forming a gate insulating film on the substrate of the core/peripheral region, forming a first conductive film of a first conductive type on the gate insulating film, forming a diffusion blocking film within the first conductive film, the diffusion blocking film being spaced apart from the gate insulating film in a vertical direction, after forming the diffusion blocking film, forming an impurity pattern including impurities within the first conductive film, diffusing the impurities through a heat treatment process to form a second conductive film of a second conductive type and forming a metal gate electrode on the second conductive film, wherein the diffusion blocking film includes helium (He) and/or argon (Ar).

Abstract: The invention discloses a method for manufacturing nickel silicide. The method comprises: Step 1: providing a semiconductor substrate, wherein the semiconductor substrate has an exposed silicon surface which is a formation region of nickel silicide; Step 2: carrying out pre-amorphization ion implantation to form an amorphous layer in the formation region of the nickel silicide, wherein an implantation source of the pre-amorphization ion implantation is xenon; and Step 3: forming the nickel silicide in the formation region of the nickel silicide by self-alignment. Xenon which is a non-radioactive inert gas with the maximum mass is adopted to optimize the uniformity of an interface layer between the amorphous layer and silicon, so that the uniformity of the ohm contact resistance of the nickel silicide is improved.

Abstract: A method of forming a semiconductor device includes forming a doped region on a semiconductor substrate, in which the doped region comprises an impurity therein, and performing a laser anneal process to the doped region with a process gas containing a dopant gas, in which the dopant gas and the impurity comprise the same chemical element.

Abstract: The present disclosure describes a silicide formation process which employs the formation of an amorphous layer in the SiGe S/D region via an application of a substrate bias voltage during a metal deposition process. For example, the method includes a substrate with a gate structure disposed thereon and a source/drain region adjacent to the gate structure. A dielectric is formed over the gate structure and the source-drain region. A contact opening is formed in the dielectric to expose a portion of the gate structure and a portion of the source/drain region. An amorphous layer is formed in the exposed portion of the source/drain region with a thickness and a composition which is based on an adjustable bias voltage applied to the substrate. Further, an anneal is performed to form a silicide on the source/drain region.

Abstract: A semiconductor device includes a transistor having a source/drain region. A conductive contact is disposed over the source/drain region. A silicide element is disposed below the conductive contact. The silicide element has a non-angular cross-sectional profile. In some embodiments, the silicide element may have an approximately curved cross-sectional profile, for example an ellipse-like profile. The silicide element is formed at least in part by forming an amorphous region in the source/drain region via an implantation process. The implantation process may be a cold implantation process.

Abstract: A photovoltaic device is provided in which the tunneling barrier for hole collection at either the front contact or the back contact of a silicon heterojunction cell is reduced, without compromising the surface passivation either the front contact or at the back contact. This is achieved in the present disclosure by replacing the intrinsic and/or doped hydrogenated amorphous silicon (a-Si:H) layer(s) at the back contact or at the front contact with an intrinsic and/or doped layer(s) of a semiconductor material having a lower valence band-offset than that of a:Si—H with c-Si, and/or a higher activated doping concentration compared to that of doped hydrogenated amorphous Si. The higher level of activated doping is due to the higher doping efficiency of the back contact or front contact semiconductor material compared to that of amorphous Si, and/or modulation doping of the back or front contact semiconducting material.

Abstract: A semiconductor device with bi-layer dislocation and method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate having a gate stack. The method further includes performing a first pre-amorphous implantation process on the substrate and forming a first stress film over the substrate. The method also includes performing a first annealing process on the substrate and the first stress film. The method further includes performing a second pre-amorphous implantation process on the annealed substrate, forming a second stress film over the substrate and performing a second annealing process on the substrate and the second stress film.

Abstract: According to one embodiment, a template substrate includes a substrate and a mask. The substrate includes a mesa region formed in a central portion of an upper surface of the substrate. The mesa region is configured to protrude more than a region of the substrate around the mesa region. An impurity is introduced into an upper layer portion of a partial region of a peripheral portion of the mesa region. The mask film is provided on the upper surface of the substrate.

Abstract: A display device and manufacturing method thereof are disclosed. In one aspect, the display device includes a substrate including a display area and a peripheral area surrounding the display area, wherein the display area includes a plurality of pixels configured to display images and a plurality of inspection pads formed in the peripheral area and configured to transmit a plurality of inspection signals to the pixels. Each of the inspection pads includes a poly resistor formed over the substrate, at least one insulating layer formed over the poly resistor, first and second conductive wires formed over the insulating layer and respectively connected to opposing ends of the poly resistor, and a protective layer formed over the insulating layer and substantially overlapping the poly resistor.

Abstract: In a method for manufacturing a semiconductor device, a dielectric layer is formed on a substrate, and a contact hole is formed from the dielectric layer to the substrate. A dielectric spacer liner is formed to cover a sidewall and a bottom of the contact hole. A portion of the dielectric spacer liner is removed to expose a portion of the substrate. A metal silicide layer is formed into the substrate through the contact hole.

Abstract: Various techniques for patterning a substrate are disclosed. Specifically, implantation of the first species into an anti-reflective coating layer is contemplated to reduce stress in the layer that may be generated during the exposure stage or development stage. During these steps, the resist layer or the resist structure may under mechanical changes (e.g. shrinkage) while it is in contact with the anti-reflective layer. Such changes may introduce stress in the anti-reflective layer, which may contribute to excessive line edge roughness (LER) or line width roughness (LWR). By implanting the first species before, during, or after these steps, the stress in the anti-reflective layer may be avoided or compensated, and excessive LER or LWR may be avoided or reduced.

Abstract: A die assembly formed on a thin dielectric sheet is described. In one example, a first and a second die have interconnect areas. A dielectric sheet, such as glass, silicon, or oxidized metal is applied over the interconnect areas of dies. Conductive vias are formed in the dielectric sheet to connect with pads of the interconnect areas. A build-up layer includes routing to connect pads of the first die interconnect area to pads of the second die interconnect area through the conductive vias and a cover is applied over the dies, the dielectric sheet, and the build-up layer.

Abstract: A method for producing a semiconductor device is provided. The method includes providing a wafer including a main surface and a silicon layer arranged at the main surface and having a nitrogen concentration of at least about 3*1014 cm?3, and partially out-diffusing nitrogen to reduce the nitrogen concentration at least close to the main surface. Further, a semiconductor device is provided.

Abstract: An n-type field effect transistor includes silicon-comprising semiconductor material comprising a pair of source/drain regions having a channel region there-between. At least one of the source/drain regions is conductively doped n-type with at least one of As and P. A conductivity-neutral dopant is in the silicon-comprising semiconductor material in at least one of the channel region and the at least one source/drain region. A gate construction is operatively proximate the channel region. Methods are disclosed.

Abstract: An embodiment integrated circuit device and a method of making the same. The embodiment method includes forming a first nitride layer over a gate stack supported by a substrate, implanting germanium ions in the first nitride layer in a direction forming an acute angle with a top surface of the substrate, etching away germanium-implanted portions of the first nitride layer to form a first asymmetric nitride spacer confined to a first side of the gate stack, the first asymmetric nitride spacer protecting a first source/drain region of the substrate from a first ion implantation, and implanting ions in a second source/drain region of the substrate on a second side of the gate stack unprotected by the first asymmetric nitride spacer to form a first source/drain.

Abstract: First and second n-type field stop layers in an n? drift region come into contact with a p+ collector layer. The first n-type field stop layer has an impurity concentration reduced toward an n+ emitter region at a steep gradient. The second n-type field stop layer has an impurity concentration distribution in which impurity concentration is reduced toward the n+ emitter region at a gentler gradient than that in the first n-type field stop layer and the impurity concentration of a peak position is less than that in the impurity concentration distribution of the first n-type field stop layer. The impurity concentration distributions of the first and second n-type field stop layers have the same peak position. The first and second n-type field stop layers are formed using annealing and first and second proton irradiation processes which have the same projected range and different acceleration energy levels.

Abstract: A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body by a first implantation into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body by a second implantation into the semiconductor body via the second side to a second depth location of the semiconductor body, a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body.

Abstract: Heterojunction bipolar transistors are provided that include at least one contact (e.g., collector, and/or emitter, and/or base) formed by a heterojunction between a crystalline semiconductor material and a doped non-crystalline semiconductor material layer. A highly doped epitaxial semiconductor layer comprising a highly doped hydrogenated crystalline semiconductor material layer portion is present at the heterojunction between the crystalline semiconductor material and the doped non-crystalline semiconductor material layer. Minority carriers within the highly doped epitaxial semiconductor layer have a diffusion length that is larger than a thickness of the highly doped epitaxial semiconductor layer.

Abstract: A method of manufacturing a silicon wafer provides a silicon wafer which can reduce the precipitation of oxygen to prevent a wafer deformation from being generated and can prevent a slip extension due to boat scratches and transfer scratches serving as a reason for a decrease in wafer strength, even when the wafer is provided to a rapid temperature-rising-and-falling thermal treatment process.

Abstract: A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.

Abstract: A wafer and a fabrication method include a base structure including a substrate for fabricating semiconductor devices. The base structure includes a front side where the semiconductor devices are formed and a back side opposite the front side. An integrated layer is formed in the back side of the base structure including impurities configured to alter etch selectivity relative to the base structure such that the integrated layer is selectively removable from the base structure to remove defects incurred during fabrication of the semiconductor devices.

Abstract: A silicon/germanium material and a silicon/carbon material may be provided in transistors of different conductivity type on the basis of an appropriate manufacturing regime without unduly contributing to overall process complexity. Furthermore, appropriate implantation species may be provided through exposed surface areas of the cavities prior to forming the corresponding strained semiconductor alloy, thereby additionally contributing to enhanced overall transistor performance. In other embodiments a silicon/carbon material may be formed in a P-channel transistor and an N-channel transistor, while the corresponding tensile strain component may be overcompensated for by means of a stress memorization technique in the P-channel transistor. Thus, the advantageous effects of the carbon species, such as enhancing overall dopant profile of P-channel transistors, may be combined with an efficient strain component while enhanced overall process uniformity may also be accomplished.

Abstract: A method of manufacturing a semiconductor device, the semiconductor device including a MOS transistor, a source electrode and a drain electrode on the MOS transistor each include a first carbon doped silicon layer including carbon at a first carbon concentration and phosphorus at a first phosphorus concentration and a second carbon doped silicon layer over the first silicon carbide layer, which includes phosphorus at a second phosphorus concentration higher than the first phosphorus concentration, and which includes carbon at a second carbon concentration less than or equal to the first carbon concentration.

Abstract: A semiconductor device and method to form a semiconductor device is described. The semiconductor includes a gate stack disposed on a substrate. Tip regions are disposed in the substrate on either side of the gate stack. Halo regions are disposed in the substrate adjacent the tip regions. A threshold voltage implant region is disposed in the substrate directly below the gate stack. The concentration of dopant impurity atoms of a particular conductivity type is approximately the same in both the threshold voltage implant region as in the halo regions. The method includes a dopant impurity implant technique having sufficient strength to penetrate a gate stack.

Abstract: A molded portable single-member housing assembly for securing and protecting elongated elements having an aesthetically pleasing design is provided. The molded portable single-member housing assembly having a lid and a depressed housing portion connected via a live hinge. The lid is engaged by a user via an aperture which permits the user to physically manipulate the lid rotatably about a hinge axis. The elongated element is store or housed within the base portion and permitted access out of the housing via at least two indentions. Further, the molded portable single-member housing assembly has at least four legs.

Abstract: Semiconductor devices are formed without zipper defects or channeling and through-implantation and with different silicide thicknesses in the gates and source/drain regions, Embodiments include forming a gate on a substrate, forming a nitride cap on the gate, forming a source/drain region in the substrate on each side of the gate, forming a wet cap fill layer on the source/drain region on each side of the gate, removing the nitride cap from the gate, and forming an amorphized layer in a top portion of the gate. Embodiments include forming the amorphized layer by implanting low energy ions.

Abstract: The semiconductor device includes a silicon substrate having a channel region, a gate electrode formed over the channel region, buried semiconductor regions formed in a surface of the silicon substrate on both sides of the gate electrode, for applying to the surface of the silicon substrate a first stress in a first direction parallel to the surface of the silicon substrate, and stressor films formed on the silicon substrate between the channel region and the buried semiconductor regions in contact with the silicon substrate, for applying to the silicon substrate a second stress in a second direction which is opposite to the first direction.

Abstract: In a second direction, in a plan view, an n-channel MOS transistor and an expanding film are adjacent. Therefore, the n-channel MOS transistor receives a positive stress in the direction in which a channel length is extended from the expanding film. As a result, a positive tensile strain in an electron moving direction is generated in a channel of the n-channel MOS transistor. On the other hand, in the second direction, in a plan view, a p-channel MOS transistor and the expanding film are shifted from each other. Therefore, the p-channel MOS transistor receives a positive stress in the direction in which a channel length is narrowed from the expanding film. As a result, a positive compressive strain in a hole moving direction is generated in a channel of the p-channel MOS transistor. Thus, both on-currents of the n-channel MOS transistor and the p-channel MOS transistor can be improved.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device which includes a MISFET, includes: forming a gate insulating film on a semiconductor substrate; forming a gate electrode on the gate insulating film; implanting nitrogen equal to or more than 5.0e14 atoms/cm2 and equal to or less than 1.5e15 atoms/cm2 in the semiconductor substrate by tilted ion implantation in a direction from an outside to an inside with respect to side surfaces of the gate electrode; depositing a metal film including nickel on areas in which nitrogen atoms are implanted, the areas are in a semiconductor substrate on both sides of the gate electrode; and performing first heat processing of reacting the metal film and the semiconductor substrate and forming metal semiconductor compound layers, the shapes of the layers are controlled by the nitrogen profiles of the areas.

Abstract: A method for fabricating a semiconductor device includes ion-implanting germanium into a monocrystalline silicon-containing substrate; forming a gate oxide layer over a surface of the monocrystalline silicon-containing substrate and forming, under the gate oxide layer, a germanium-rich region in which the germanium is concentrated, by performing a plasma oxidation process; and crystallizing the germanium-rich region by performing an annealing process.

Abstract: A method for fabricating complimentary metal-oxide-semiconductor field-effect transistor is disclosed. The method includes the steps of: (A) forming a first gate structure and a second gate structure on a substrate; (B) performing a first co-implantation process to define a first type source/drain extension region depth profile in the substrate adjacent to two sides of the first gate structure; (C) forming a first source/drain extension region in the substrate adjacent to the first gate structure; (D) performing a second co-implantation process to define a first pocket region depth profile in the substrate adjacent to two sides of the second gate structure; (E) performing a first pocket implantation process to form a first pocket region adjacent to two sides of the second gate structure.

Abstract: When forming cavities in active regions of semiconductor devices in order to incorporate a strain\-inducing semiconductor material, superior uniformity may be achieved by using an implantation process so as to selectively modify the etch behavior of exposed portions of the active region. In this manner, the basic configuration of the cavities may be adjusted with a high degree of flexibility, while at the same time the dependence on pattern loading effect may be reduced. Consequently, a significantly reduced variability of transistor characteristics may be achieved.

Abstract: In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.

Abstract: Electrical components such as integrated circuits may be mounted on a printed circuit board. To prevent the electrical components from being subjected to electromagnetic interference, radio-frequency shielding structures may be formed over the components. The radio-frequency shielding structures may be formed from a layer of metallic paint. Components may be covered by a layer of dielectric. Channels may be formed in the dielectric between blocks of circuitry. The metallic paint may be used to coat the surfaces of the dielectric and to fill the channels. Openings may be formed in the surface of the metallic paint to separate radio-frequency shields from each other. Conductive traces on the surface of the printed circuit board may be used in connecting the metallic paint layer to internal printed circuit board traces.

Abstract: A method of fabricating a metal silicide layer includes forming a metal layer on a substrate, and forming a pre-metal silicide layer by reacting the substrate with the metal layer by performing a first annealing process on the substrate. The method also includes implanting silicon into the substrate using a gas cluster ion beam (GCIB) process, and changing the pre-metal silicide layer into a metal silicide layer by performing a second annealing process on the substrate.

Abstract: A method and structure are disclosed for increasing strain in a device, specifically an n-type field effect transistor (NFET) complementary metal-oxide-semiconductor (CMOS) device. Embodiments of this invention include growing an epitaxial layer, performing a cold carbon or cluster carbon pre-amorphization implantation to implant substitutional carbon into the epitaxial layer, forming a tensile cap over the epitaxial layer, and then annealing to recrystallize the amorphous layer to create a stress memorization technique (SMT) effect. The epitaxial layer will therefore include substitutional carbon and have a memorized tensile stress induced by the SMT. Embodiments of this invention can also include a lower epitaxial layer under the epitaxial layer, the lower epitaxial layer comprising for example, a silicon carbon phosphorous (SiCP) layer.

Abstract: A method for forming a complementary metal oxide semiconductor device includes forming a first capping layer on a dielectric layer, blocking portions in the capping layer in regions where the capping layer is to be preserved using a block mask. Exposed portions of the first capping layer are intermixed with the dielectric layer to form a first intermixed layer. The block mask is removed. The first capping layer and the first intermixed layer are etched such that the first capping layer is removed to re-expose the dielectric layer in regions without removing the first intermixed layer.

Abstract: A process is disclosed which incorporates implantation of a carbon cluster into a substrate to improve the characteristics of transistor junctions when the substrates are doped with Boron and Phosphorous in the manufacturing of PMOS transistor structures in integrated circuits. There are two processes which result from this novel approach: (1) diffusion control for USJ formation; and (2) high dose carbon implantation for stress engineering. Diffusion control for USJ formation is demonstrated in conjunction with a boron or shallow boron cluster implant of the source/drain structures in PMOS. More particularly, first, a cluster carbon ion, such as C16Hx+, is implanted into the source/drain region at approximately the same dose as the subsequent boron implant; followed by a shallow boron, boron cluster, phosphorous or phosphorous cluster ion implant to form the source/drain extensions, preferably using a borohydride cluster, such as B18Hx+ or B10Hx+.

Abstract: The semiconductor device includes a silicon substrate having a channel region, a gate electrode formed over the channel region, buried semiconductor regions formed in a surface of the silicon substrate on both sides of the gate electrode, for applying to the surface of the silicon substrate a first stress in a first direction parallel to the surface of the silicon substrate, and stressor films formed on the silicon substrate between the channel region and the buried semiconductor regions in contact with the silicon substrate, for applying to the silicon substrate a second stress in a second direction which is opposite to the first direction.

Abstract: An integrated circuit device and method for manufacturing the integrated circuit device provide improved control over a shape of a trench for forming the source and drain features of integrated circuit device, by forming a second doped region in a first doped region and removing the first and the second doped regions by a first and a second wet etching processes.

Abstract: A wafer and a fabrication method include a base structure including a substrate for fabricating semiconductor devices. The base structure includes a front side where the semiconductor devices are formed and a back side opposite the front side. An integrated layer is formed in the back side of the base structure including impurities configured to alter etch selectivity relative to the base structure such that the integrated layer is selectively removable from the base structure to remove defects incurred during fabrication of the semiconductor devices.

Abstract: One aspect of this disclosure relates to a method for forming a wafer with a strained semiconductor. In various embodiments of the method, a predetermined contour is formed in one of a semiconductor membrane and a substrate wafer. The semiconductor membrane is bonded to the substrate wafer and the predetermined contour is straightened to induce a predetermined strain in the semiconductor membrane. In various embodiments, a substrate wafer is flexed into a flexed position, a portion of the substrate wafer is bonded to a semiconductor layer when the substrate wafer is in the flexed position, and the substrate wafer is relaxed to induce a predetermined strain in the semiconductor layer. Other aspects and embodiments are provided herein.

Abstract: A method (and semiconductor device) of fabricating a semiconductor device provides a filed effect transistor (FET) with reduced contact resistance (and series resistance) for improved device performance. An impurity is implanted in the source/drain (S/D) regions after contact silicide formation and a spike anneal process is performed that lowers the schottky barrier height (SBH) of the interface between the silicide and the lower junction region of the S/D regions. This results in lower contact resistance and reduces the thickness (and Rs) of the region at the silicide-semiconductor interface.